KR20100083879A - Light emitting diode and method for fabricating the same - Google Patents
Light emitting diode and method for fabricating the same Download PDFInfo
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- KR20100083879A KR20100083879A KR1020090003182A KR20090003182A KR20100083879A KR 20100083879 A KR20100083879 A KR 20100083879A KR 1020090003182 A KR1020090003182 A KR 1020090003182A KR 20090003182 A KR20090003182 A KR 20090003182A KR 20100083879 A KR20100083879 A KR 20100083879A
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Abstract
Description
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode having improved light emission efficiency by etching a surface of a semiconductor layer deformed or modified by scribing during a scribing process, and It relates to a manufacturing method.
A light emitting diode, which is a typical light emitting device, is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and are configured to emit light by recombination of electrons and holes.
As such a light emitting diode, a GaN-based light emitting diode is known. GaN-based light emitting diodes are manufactured by sequentially stacking GaN-based N-type semiconductor layers, active layers (or light-emitting layers), and P-type semiconductor layers on a substrate made of a material such as sapphire or SiC.
Recently, high-efficiency light emitting diodes are expected to replace fluorescent lamps. In particular, the efficiency of white light emitting diodes has reached a level similar to that of conventional fluorescent lamps. However, the efficiency of the light emitting diode is further improved, and therefore, continuous efficiency improvement is further required.
Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure, and the second is that the light generated in the light emitting diode is not emitted to the whole outside but is lost inside. This increases the light extraction efficiency.
On the other hand, like other semiconductor devices, the light emitting diode does not manufacture individual devices one by one, but instead grows the compound semiconductor layers on a wide sapphire substrate, for example, and then scribes the compound semiconductor layer from the compound semiconductor layer. Crying, diamond tip or diamond wheel scribing processes are processed to separate the individual components.
For example, in the laser scribing process, the cleaved surface of the compound semiconductor layer may be deformed or modified by the irradiated laser. In this case, the modified or deformed form may have a burned form, for example, or may be a form in which the by-products generated by laser scribing are attached to the cleaved surface. The deformed or deformed portion is an obstacle to absorbing or blocking outward light and transmitting or reflecting light.
SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode having improved luminous efficiency and a method of manufacturing the same by performing an etching process on a cleaved surface of a semiconductor layer deformed or modified during a scribing process.
According to one aspect of the invention, the substrate; And a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate, wherein at least one surface of the first conductive semiconductor layer has a sidewall formed by scribing, and the sidewall is A light emitting diode having an etched surface is provided.
Preferably, the sidewalls of the first conductivity-type semiconductor layer may be formed to be inclined inward toward the substrate.
Preferably, the substrate may have a portion exposed by an inclined portion of the sidewall of the first conductivity type semiconductor layer.
Preferably, the etched surface of the sidewall is a surface formed by etching along the crystal surface of the first conductivity type semiconductor layer.
Preferably, at least one surface of the active layer and the second conductivity type semiconductor layer may have a sidewall formed by the scribing, and the sidewall may have an etched surface.
Preferably, the sidewalls of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer may be formed to be inwardly inclined toward the substrate.
Preferably, the substrate may be a substrate having a PSS pattern formed on at least one surface thereof.
According to another aspect of the invention, forming a semiconductor layer including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; Scribing the substrate on which the semiconductor layers are formed for each light emitting cell region; And wet etching a sidewall of the light emitting cell having a portion deformed or modified by the scribing.
Preferably, the wet etching may be performed such that a portion deformed or modified by the scribing step is removed from the sidewall of the light emitting cell.
Preferably, the wet etching may be performed such that at least a sidewall of the first conductivity-type semiconductor layer is formed to be inwardly inclined toward the substrate.
Preferably, the scribing may include, after the forming of the semiconductor layers, the light emitting cell regions to reach the substrate via a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer. Scribing; Sidewalls of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may be formed by the scribing.
Preferably, the wet etching may be performed such that sidewalls of the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer are formed to be inwardly inclined toward the substrate.
Preferably, the light emitting diode manufacturing method further includes, after forming the semiconductor layers, mesa etching the semiconductor substrate to expose the first conductivity type semiconductor layer for each of the light emitting cell regions; In the scribing step, the substrate on which the exposed first conductive semiconductor layer is formed may be scribed for each light emitting cell region.
Preferably, the etchant used for the wet etching may include one or more of KOH, NaOH, H 3 PO 4 , H 2 SO 4 .
Preferably, the light emitting diode manufacturing method may further include the step of breaking the scribed substrate after the wet etching step to separate into individual devices.
According to the present invention, as the etching process is performed after the laser scribing, the deformed or modified portion of the sidewall including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer is removed in the scribing process. Accordingly, the amount of light may be improved by preventing leakage current between the first conductive semiconductor layer and the second conductive semiconductor layer, which may be generated due to the deformed portion.
In addition, as the cleaved surfaces of the semiconductor layer and the substrate deformed or modified by the scribing process are cleanly treated, the amount of light emitted through the semiconductor layer and the substrate may be improved.
In addition, at least the sidewall of the first conductive semiconductor layer is formed to be inclined inwardly by the wet etching process, so that the area where light is emitted is wider and the total amount of light is reduced by reducing total reflection. This can provide an effect.
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.
1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
Referring to FIG. 1, a first conductivity
The
The first
Meanwhile, a buffer layer (not shown) may be interposed between the first
As illustrated, the second
Meanwhile, the
When the first conductivity-
The lower portion of the first conductivity
In addition, the light emitting diode according to the present invention has a scribing process such as laser scribing, a diamond tip or a diamond wheel on the first
2 to 7 are cross-sectional views illustrating a method for manufacturing a light emitting diode according to an embodiment of the present invention.
In an embodiment of the present invention, the laser scribing process is described as a scribing process, but the present invention is not limited thereto, and a diamond tip or diamond wheel scribing process may be used for the scribing process. .
Referring to FIG. 2, a
The first
The buffer layer is formed to mitigate lattice mismatch between the
The first
Here, the first conductivity type and the second conductivity type semiconductor layers are N type and P type, or P type and N type, respectively. In the gallium nitride-based compound semiconductor layer, the N-type semiconductor layer may be formed by doping with silicon (Si) as an impurity, and the P-type semiconductor layer may be formed by doping with magnesium (Mg) as an impurity.
Referring to FIG. 3, a portion of the first
That is, the photoresist patterns (not shown) are used as an etching mask to limit the area of each of the light emitting cells, thereby forming the second
Referring to FIG. 4, a laser is irradiated to the second
Referring to FIG. 5, as laser scribing is performed, the first
In the laser scribing process, the cleaved surface of the scribed first
The substrate is subjected to etching using a mixed solution prepared in advance for the laser scribing process. The mixed solution may be any one or more mixed solutions selected from KOH, NaOH, H 3 PO 4 , H 2 SO 4 .
Referring to FIG. 6, a portion deformed or modified on a sidewall including the first conductivity
In addition, the deformed or modified portion of the cleaved surface of the first
The wet etching process may be sufficiently performed such that the first
While the etching process is performed on the cleaved surface of the first
Referring to FIG. 7, after performing an etching process, a
8 is a graph showing the distribution of leakage current before and after the etching process according to the present invention.
9 is a view showing a cleaved surface of the semiconductor layer and the substrate before the etching process according to the present invention, Figure 10 is a view showing a cleaved surface of the semiconductor layer and the substrate after the etching process according to the present invention.
Referring to FIG. 9, before performing the etching process according to the present invention, the cleaved surfaces of the semiconductor layer and the substrate may be seen to be deformed or modified by laser scribing. Referring to FIG. 10, the etching according to the present invention may be performed. After performing the process, it can be seen that the cleaved surfaces of the semiconductor layer and the substrate are clean.
As the etching process is performed after the laser scribing, a deformation formed on a sidewall including the first
In addition, as the cleaved surfaces of the semiconductor layer and the substrate deformed or modified by the laser scribing process are cleanly treated, the amount of light emitted through the semiconductor layer and the substrate may be improved.
In addition, as the sidewall of the first conductivity-
The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.
For example, in an embodiment of the present invention, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are formed on a substrate, and then mesa etching for exposing the first conductive semiconductor layer is performed for each light emitting cell region. After that, laser scribing was performed by irradiating a laser to the exposed first conductive semiconductor layer, and a wet etching process was performed.
However, in another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the laser beam is irradiated on the upper portion of the second conductive semiconductor layer to produce a laser beam for each light emitting cell region. A scribe is performed, and a mesa etching is performed to expose the first conductive semiconductor layer to the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, which are divided into light emitting cell regions by laser scribing. In addition, the wet etching may be performed before or after the mesa etching process.
In another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the first conductive semiconductor layer, the active layer, and the second conductive semiconductor are exposed so that the substrate is exposed. The layer is dry-etched to separate the light emitting cell regions, and then mesa etching is performed to expose the first conductive semiconductor layer to the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer separated by the light emitting cell regions. In addition, laser scribing may be performed on the substrate for each of the light emitting cells, and then etching may be performed. Through this manufacturing method, the light emitting diode shown in FIG. 11 may be manufactured.
In another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the first conductive semiconductor layer, the active layer, and the second conductive semiconductor are exposed so that the substrate is exposed. The layer may be dry etched to separate the light emitting cell regions, and laser scribing may be performed on the substrate for each light emitting cell region, and then wet etching may be performed. Mesa etching may be performed to expose the first conductivity-type semiconductor layer to the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer separated for each of the light emitting cell regions before or after the etching process.
In addition, in the above-described various modified embodiments, forming the electrode or the electrode pad in the first conductive semiconductor layer and the second conductive semiconductor layer may be variously determined according to a process according to a process operator's selection.
In addition, the above-described embodiments of the present invention have been described with respect to a light emitting diode that continuously uses a substrate used to grow semiconductor layers, but the present invention is not limited thereto. That is, for example, after the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the first substrate (the sacrificial substrate), a metal layer is formed on the second conductive semiconductor layer, and the second substrate (the support substrate) is formed. Substrate), and then separating the first substrate used to grow the semiconductor layers using LLO, and then separating the individual substrates into individual devices using laser scribing for each of the light emitting cell regions with respect to the supporting substrate. Even in the case of providing a light emitting diode, it may be appropriately modified and used.
In addition, in other embodiments of the present invention, as shown in FIGS. 11 and 12, the
In addition, in the above-described embodiments of the present invention, the lower portion of the sidewall of the first conductivity-
1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.
2 to 7 are cross-sectional views illustrating a method for manufacturing a light emitting diode according to an embodiment of the present invention.
8 is a graph showing the distribution of leakage current before and after the etching process according to the present invention.
9 is a view illustrating cleaved surfaces of a semiconductor layer and a substrate before an etching process according to the present invention.
10 is a view showing cleaved surfaces of a semiconductor layer and a substrate after an etching process according to the present invention.
11 to 14 are cross-sectional views illustrating light emitting diodes according to other exemplary embodiments of the present invention.
Claims (15)
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KR20090003182A KR101205527B1 (en) | 2009-01-15 | 2009-01-15 | Light emitting diode and method for fabricating the same |
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KR20090003182A KR101205527B1 (en) | 2009-01-15 | 2009-01-15 | Light emitting diode and method for fabricating the same |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012173416A3 (en) * | 2011-06-15 | 2013-03-28 | Seoul Opto Device Co., Ltd. | Semiconductor light emitting device and method of menufacturing the same |
CN105514242A (en) * | 2011-10-27 | 2016-04-20 | 广镓光电股份有限公司 | Semiconductor light emitting diode structure |
KR20220123614A (en) * | 2016-12-16 | 2022-09-08 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing light emitting element |
US11855238B2 (en) | 2016-12-16 | 2023-12-26 | Nichia Corporation | Light emitting element |
-
2009
- 2009-01-15 KR KR20090003182A patent/KR101205527B1/en active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2012173416A3 (en) * | 2011-06-15 | 2013-03-28 | Seoul Opto Device Co., Ltd. | Semiconductor light emitting device and method of menufacturing the same |
CN105514242A (en) * | 2011-10-27 | 2016-04-20 | 广镓光电股份有限公司 | Semiconductor light emitting diode structure |
KR20220123614A (en) * | 2016-12-16 | 2022-09-08 | 니치아 카가쿠 고교 가부시키가이샤 | Method for manufacturing light emitting element |
US11855238B2 (en) | 2016-12-16 | 2023-12-26 | Nichia Corporation | Light emitting element |
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