KR20100083879A - Light emitting diode and method for fabricating the same - Google Patents

Light emitting diode and method for fabricating the same Download PDF

Info

Publication number
KR20100083879A
KR20100083879A KR1020090003182A KR20090003182A KR20100083879A KR 20100083879 A KR20100083879 A KR 20100083879A KR 1020090003182 A KR1020090003182 A KR 1020090003182A KR 20090003182 A KR20090003182 A KR 20090003182A KR 20100083879 A KR20100083879 A KR 20100083879A
Authority
KR
South Korea
Prior art keywords
semiconductor layer
substrate
conductive semiconductor
light emitting
scribing
Prior art date
Application number
KR1020090003182A
Other languages
Korean (ko)
Other versions
KR101205527B1 (en
Inventor
김창연
윤여진
이준희
최재량
Original Assignee
서울옵토디바이스주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울옵토디바이스주식회사 filed Critical 서울옵토디바이스주식회사
Priority to KR20090003182A priority Critical patent/KR101205527B1/en
Publication of KR20100083879A publication Critical patent/KR20100083879A/en
Application granted granted Critical
Publication of KR101205527B1 publication Critical patent/KR101205527B1/en

Links

Images

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE: A light emitting diode and a method for fabricating the same are provided to prevent current-leakage between a first conductive semiconductor layer and a second conductive semiconductor layer by etching the deformed parts of the first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer after a scribing process. CONSTITUTION: A first conductive semiconductor layer(55), an active layer(57), a second conductive semiconductor layer(59) are formed on a substrate(51). A scribing process is implemented to the substrate including the conductive semiconductor layers and the active layer by each light-emitting cell. A part of the sidewall of the light-emitting cell is deformed by the scribing process. A wet-etching process is implemented with respect to the deformed sidewall of the light-emitting cell. The sidewall of the first conductor semiconductor layer is inclined with respect to the substrate by the wet-etching process. An area through which light is emitted is increased by the inclined sidewall of the first conductive semiconductor layer.

Description

LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light emitting diode and a method of manufacturing the same, and more particularly, to a light emitting diode having improved light emission efficiency by etching a surface of a semiconductor layer deformed or modified by scribing during a scribing process, and It relates to a manufacturing method.

A light emitting diode, which is a typical light emitting device, is a photoelectric conversion semiconductor device having a structure in which an N-type semiconductor and a P-type semiconductor are bonded to each other, and are configured to emit light by recombination of electrons and holes.

As such a light emitting diode, a GaN-based light emitting diode is known. GaN-based light emitting diodes are manufactured by sequentially stacking GaN-based N-type semiconductor layers, active layers (or light-emitting layers), and P-type semiconductor layers on a substrate made of a material such as sapphire or SiC.

Recently, high-efficiency light emitting diodes are expected to replace fluorescent lamps. In particular, the efficiency of white light emitting diodes has reached a level similar to that of conventional fluorescent lamps. However, the efficiency of the light emitting diode is further improved, and therefore, continuous efficiency improvement is further required.

Two major approaches have been attempted to improve the efficiency of light emitting diodes. The first is to increase the internal quantum efficiency, which is determined by the crystal quality and the epilayer structure, and the second is that the light generated in the light emitting diode is not emitted to the whole outside but is lost inside. This increases the light extraction efficiency.

On the other hand, like other semiconductor devices, the light emitting diode does not manufacture individual devices one by one, but instead grows the compound semiconductor layers on a wide sapphire substrate, for example, and then scribes the compound semiconductor layer from the compound semiconductor layer. Crying, diamond tip or diamond wheel scribing processes are processed to separate the individual components.

For example, in the laser scribing process, the cleaved surface of the compound semiconductor layer may be deformed or modified by the irradiated laser. In this case, the modified or deformed form may have a burned form, for example, or may be a form in which the by-products generated by laser scribing are attached to the cleaved surface. The deformed or deformed portion is an obstacle to absorbing or blocking outward light and transmitting or reflecting light.

SUMMARY OF THE INVENTION An object of the present invention is to provide a light emitting diode having improved luminous efficiency and a method of manufacturing the same by performing an etching process on a cleaved surface of a semiconductor layer deformed or modified during a scribing process.

According to one aspect of the invention, the substrate; And a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate, wherein at least one surface of the first conductive semiconductor layer has a sidewall formed by scribing, and the sidewall is A light emitting diode having an etched surface is provided.

Preferably, the sidewalls of the first conductivity-type semiconductor layer may be formed to be inclined inward toward the substrate.

Preferably, the substrate may have a portion exposed by an inclined portion of the sidewall of the first conductivity type semiconductor layer.

Preferably, the etched surface of the sidewall is a surface formed by etching along the crystal surface of the first conductivity type semiconductor layer.

Preferably, at least one surface of the active layer and the second conductivity type semiconductor layer may have a sidewall formed by the scribing, and the sidewall may have an etched surface.

Preferably, the sidewalls of the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer may be formed to be inwardly inclined toward the substrate.

Preferably, the substrate may be a substrate having a PSS pattern formed on at least one surface thereof.

According to another aspect of the invention, forming a semiconductor layer including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer on a substrate; Scribing the substrate on which the semiconductor layers are formed for each light emitting cell region; And wet etching a sidewall of the light emitting cell having a portion deformed or modified by the scribing.

Preferably, the wet etching may be performed such that a portion deformed or modified by the scribing step is removed from the sidewall of the light emitting cell.

Preferably, the wet etching may be performed such that at least a sidewall of the first conductivity-type semiconductor layer is formed to be inwardly inclined toward the substrate.

Preferably, the scribing may include, after the forming of the semiconductor layers, the light emitting cell regions to reach the substrate via a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer. Scribing; Sidewalls of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may be formed by the scribing.

Preferably, the wet etching may be performed such that sidewalls of the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer are formed to be inwardly inclined toward the substrate.

Preferably, the light emitting diode manufacturing method further includes, after forming the semiconductor layers, mesa etching the semiconductor substrate to expose the first conductivity type semiconductor layer for each of the light emitting cell regions; In the scribing step, the substrate on which the exposed first conductive semiconductor layer is formed may be scribed for each light emitting cell region.

Preferably, the etchant used for the wet etching may include one or more of KOH, NaOH, H 3 PO 4 , H 2 SO 4 .

Preferably, the light emitting diode manufacturing method may further include the step of breaking the scribed substrate after the wet etching step to separate into individual devices.

According to the present invention, as the etching process is performed after the laser scribing, the deformed or modified portion of the sidewall including the first conductive semiconductor layer, the active layer and the second conductive semiconductor layer is removed in the scribing process. Accordingly, the amount of light may be improved by preventing leakage current between the first conductive semiconductor layer and the second conductive semiconductor layer, which may be generated due to the deformed portion.

In addition, as the cleaved surfaces of the semiconductor layer and the substrate deformed or modified by the scribing process are cleanly treated, the amount of light emitted through the semiconductor layer and the substrate may be improved.

In addition, at least the sidewall of the first conductive semiconductor layer is formed to be inclined inwardly by the wet etching process, so that the area where light is emitted is wider and the total amount of light is reduced by reducing total reflection. This can provide an effect.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The following embodiments are provided as examples to ensure that the spirit of the present invention to those skilled in the art will fully convey. Accordingly, the present invention is not limited to the embodiments described below and may be embodied in other forms. And, in the drawings, the width, length, thickness, etc. of the components may be exaggerated for convenience. Like numbers refer to like elements throughout.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

Referring to FIG. 1, a first conductivity type semiconductor layer 55 is formed on a substrate 51. A portion of the first conductivity type semiconductor layer 55 is exposed. The active layer 57 is formed on another part of the first conductive semiconductor layer 55. The second conductivity type semiconductor layer 59 is formed on the active layer 57. The first electrode 85 is formed on the exposed portion of the first conductivity type semiconductor layer 55. The second electrode 83 is formed on the second conductive semiconductor layer 59.

The active layer 57 may be a single quantum well or multiple quantum wells, the material and composition of which are selected according to the emission wavelength required. For example, the active layer 57 may be formed of a gallium nitride-based compound semiconductor. Meanwhile, the first conductive semiconductor layer 55 and the second conductive semiconductor layer 59 may be formed of a material having a larger band gap than the active layer 57, and may be formed of a gallium nitride-based compound semiconductor.

The first conductive semiconductor layer 55 and the second conductive semiconductor layer 59 may be N-type and P-type semiconductor layers, or may be P-type and N-type semiconductor layers, and the first electrode 85 and the second electrode Reference numeral 83 may be an N-electrode and a P-electrode, or may be a P-electrode and an N-electrode. In the present embodiment, the first conductive semiconductor layer 55 and the second conductive semiconductor layer 59 are N-type and P-type semiconductor layers, and accordingly, the first electrode 85 and the second electrode 83 are The case of the N-electrode and the P-electrode will be described.

Meanwhile, a buffer layer (not shown) may be interposed between the first conductive semiconductor layer 55 and the substrate 51. The buffer layer is employed to mitigate lattice mismatch between the substrate 51 and the first conductivity type semiconductor layer 55.

As illustrated, the second conductive semiconductor layer 59 is positioned above a portion of the first conductive semiconductor layer 55, and the active layer 27 is formed of the second conductive semiconductor layer 59 and the first conductive layer. It is interposed between the conductive semiconductor layers 55. In addition, a transparent electrode layer (not shown) may be disposed on the second conductivity-type semiconductor layer 59. The transparent electrode layer may be formed of a material such as indium tin oxide (ITO) or Ni / Au.

Meanwhile, the first electrode 85 is positioned on the first conductive semiconductor layer 55. Meanwhile, a second electrode 83 is positioned on the second conductive semiconductor layer 59.

When the first conductivity-type semiconductor layer 55 is N-type, the first electrode 85 may be formed of Ni / Au or Cr / Au using a lift-off technique.

The lower portion of the first conductivity type semiconductor layer 55 is formed to be inwardly inclined toward the substrate 51. The substrate 51 has a portion exposed by the inclined portion of the first conductivity type semiconductor layer 55. Further, the sidewalls of the first conductive semiconductor layer 55 inclined inwardly have a surface formed by etching along the crystal plane of the first conductive semiconductor layer 55.

In addition, the light emitting diode according to the present invention has a scribing process such as laser scribing, a diamond tip or a diamond wheel on the first conductive semiconductor layer 55, the active layer 57, and the second conductive semiconductor layer 59. In the scribing process, the deformed or denatured parts are removed and processed cleanly.

2 to 7 are cross-sectional views illustrating a method for manufacturing a light emitting diode according to an embodiment of the present invention.

In an embodiment of the present invention, the laser scribing process is described as a scribing process, but the present invention is not limited thereto, and a diamond tip or diamond wheel scribing process may be used for the scribing process. .

Referring to FIG. 2, a substrate 51 is prepared. The substrate 51 is made of sapphire (Al 2 O 3 ), silicon carbide (SiC), zinc oxide (ZnO), silicon (Si), spinel (spinel), gallium arsenide (GaAs), gallium phosphide (GaP), lithium-alumina (LiAl 2 O 3 ), boron nitride (BN), aluminum nitride (AlN), gallium nitride (GaN), zinc oxide (ZNO) substrate, but is not limited thereto, and the semiconductor to be formed on the substrate 51 Various choices may be made depending on the material of the layer.

The first conductive semiconductor layer 55, the active layer 57, and the second conductive semiconductor layer 59 are formed on the substrate 51. Before forming the first conductive semiconductor layer 55, a buffer layer (not shown) may be formed between the substrate 51 and the first conductive semiconductor layer 55.

The buffer layer is formed to mitigate lattice mismatch between the substrate 51 and the semiconductor layer 55 to be formed thereon, and may be formed of, for example, gallium nitride (GaN) or aluminum nitride (AlN). When the substrate 51 is a conductive substrate, the buffer layer is preferably formed of an insulating layer or a semi-insulating layer, and may be formed of AlN or semi-insulating GaN.

The first conductive semiconductor layer 55, the active layer 57, and the second conductive semiconductor layer 59 may be formed of a gallium nitride-based semiconductor material, that is, (B, Al, In, Ga) N. The first and second conductive semiconductor layers 55 and 59 and the active layer 57 may be formed of metal organic chemical vapor deposition (MOCVD), molecular beam epitaxy, or hydride vapor phase epitaxy (HVPE). ) Can be grown intermittently or continuously using a technique or the like.

Here, the first conductivity type and the second conductivity type semiconductor layers are N type and P type, or P type and N type, respectively. In the gallium nitride-based compound semiconductor layer, the N-type semiconductor layer may be formed by doping with silicon (Si) as an impurity, and the P-type semiconductor layer may be formed by doping with magnesium (Mg) as an impurity.

Referring to FIG. 3, a portion of the first conductive semiconductor layer 55 is exposed through mesa etching to expose the first conductive semiconductor layer 55 for each light emitting cell to form an electrode.

That is, the photoresist patterns (not shown) are used as an etching mask to limit the area of each of the light emitting cells, thereby forming the second conductive semiconductor layer 59, the active layer 57, and the first conductive semiconductor layer 55. A portion of the first conductive semiconductor layer 55 is exposed by mesa etching in sequence.

Referring to FIG. 4, a laser is irradiated to the second conductive semiconductor layer 59 and the exposed first conductive semiconductor layer 55 to perform laser scribing for each light emitting cell. The wavelength of the laser that can be used for laser scribing can be, for example, wavelengths of 265 nm, 305 nm, and 365 nm.

Referring to FIG. 5, as laser scribing is performed, the first conductive semiconductor layer 55 is decomposed at a high temperature by a laser to be irradiated and separated into light emitting cells based on a portion to which a laser is irradiated. A part of 51) is also removed to form grooves for each light emitting cell.

In the laser scribing process, the cleaved surface of the scribed first conductive semiconductor layer 55 and the cleaved surface of the substrate 51 may be directly deformed or modified by the irradiated laser. In addition, by-products of the first conductive semiconductor layer 55 and the substrate 51 decomposed by the laser during the laser scribing process may include the first conductive semiconductor layer 55, the active layer 57, and the second conductive semiconductor. It can be attached to sidewalls that include layer 59 so that its surface can be modified or modified.

The substrate is subjected to etching using a mixed solution prepared in advance for the laser scribing process. The mixed solution may be any one or more mixed solutions selected from KOH, NaOH, H 3 PO 4 , H 2 SO 4 .

Referring to FIG. 6, a portion deformed or modified on a sidewall including the first conductivity type semiconductor layer 55, the active layer 57, and the second conductivity type semiconductor layer 59 by an etching process using the mixed solution may be used. Can be removed. Accordingly, the wet etching process may be sufficiently performed to remove portions deformed or modified in at least a portion of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer by the laser scribing process.

In addition, the deformed or modified portion of the cleaved surface of the first conductive semiconductor layer 55 and the cleaved surfaces of the substrate 51 may be removed by a laser scribing process.

The wet etching process may be sufficiently performed such that the first conductive semiconductor layer 55 is inclined inwardly as the first conductive semiconductor layer 55 is adjacent to the substrate 51 by the wet etching.

While the etching process is performed on the cleaved surface of the first conductive semiconductor layer 55, the etching progression is most advanced at the interface between the substrate 51 and the first conductive semiconductor layer 55. Accordingly, the cleaved surface of the first conductivity-type semiconductor layer 55 penetrates into the interface with the substrate 51 and the etching proceeds. As a result, when the etching proceeds until the deformed or modified portions formed on the sidewall including the first conductivity type semiconductor layer 55, the active layer 57, and the second conductivity type semiconductor layer 59 are removed, the first conductivity is obtained. The lower portion of the type semiconductor layer 55 is inclined inward toward the substrate 51. In the case of over-etching, the sidewalls of the first conductivity-type semiconductor layer 55 intensify the inclination degree, so that the sidewalls of the first conductivity-type semiconductor layer 55 naturally extend to the substrate 51. It may be formed to be inclined inward as the adjacent.

Referring to FIG. 7, after performing an etching process, a first electrode 85 is formed in an exposed region of the first conductive semiconductor layer 55 for each light emitting cell, and the second conductive semiconductor layer 59 is formed. The second electrode 83 is formed on the upper portion of the second electrode 83. Thereafter, the substrate 51 is broken and separated into individual elements to complete the light emitting diode shown in FIG. 2. Meanwhile, before breaking the substrate 51, the substrate 51 may be thinned through a lapping process. The lapping process for the substrate 51 may be performed before laser scribing, or may be performed after laser scribing.

8 is a graph showing the distribution of leakage current before and after the etching process according to the present invention.

9 is a view showing a cleaved surface of the semiconductor layer and the substrate before the etching process according to the present invention, Figure 10 is a view showing a cleaved surface of the semiconductor layer and the substrate after the etching process according to the present invention.

Referring to FIG. 9, before performing the etching process according to the present invention, the cleaved surfaces of the semiconductor layer and the substrate may be seen to be deformed or modified by laser scribing. Referring to FIG. 10, the etching according to the present invention may be performed. After performing the process, it can be seen that the cleaved surfaces of the semiconductor layer and the substrate are clean.

As the etching process is performed after the laser scribing, a deformation formed on a sidewall including the first conductive semiconductor layer 55, the active layer 57, and the second conductive semiconductor layer 59 in the laser scribing process, or As the modified portion is removed, the amount of light may be improved by preventing leakage current between the first conductive semiconductor layer 55 and the second conductive semiconductor layer 59, which may be generated due to the deformed or modified portion. .

In addition, as the cleaved surfaces of the semiconductor layer and the substrate deformed or modified by the laser scribing process are cleanly treated, the amount of light emitted through the semiconductor layer and the substrate may be improved.

In addition, as the sidewall of the first conductivity-type semiconductor layer 55 is inclined inwardly as the sidewall of the first conductivity-type semiconductor layer 55 is adjacent to the substrate 51 by the wet etching process, the area where light is emitted is larger than in the related art. It is possible to improve the amount of light emitted by reducing total reflection of high light.

The present invention is not limited to the above described embodiments, and various modifications and changes can be made by those skilled in the art, which are included in the spirit and scope of the present invention as defined in the appended claims.

For example, in an embodiment of the present invention, a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer are formed on a substrate, and then mesa etching for exposing the first conductive semiconductor layer is performed for each light emitting cell region. After that, laser scribing was performed by irradiating a laser to the exposed first conductive semiconductor layer, and a wet etching process was performed.

However, in another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the laser beam is irradiated on the upper portion of the second conductive semiconductor layer to produce a laser beam for each light emitting cell region. A scribe is performed, and a mesa etching is performed to expose the first conductive semiconductor layer to the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer, which are divided into light emitting cell regions by laser scribing. In addition, the wet etching may be performed before or after the mesa etching process.

In another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the first conductive semiconductor layer, the active layer, and the second conductive semiconductor are exposed so that the substrate is exposed. The layer is dry-etched to separate the light emitting cell regions, and then mesa etching is performed to expose the first conductive semiconductor layer to the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer separated by the light emitting cell regions. In addition, laser scribing may be performed on the substrate for each of the light emitting cells, and then etching may be performed. Through this manufacturing method, the light emitting diode shown in FIG. 11 may be manufactured.

In another embodiment of the present invention, the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the substrate, and then the first conductive semiconductor layer, the active layer, and the second conductive semiconductor are exposed so that the substrate is exposed. The layer may be dry etched to separate the light emitting cell regions, and laser scribing may be performed on the substrate for each light emitting cell region, and then wet etching may be performed. Mesa etching may be performed to expose the first conductivity-type semiconductor layer to the first conductivity-type semiconductor layer, the active layer, and the second conductivity-type semiconductor layer separated for each of the light emitting cell regions before or after the etching process.

In addition, in the above-described various modified embodiments, forming the electrode or the electrode pad in the first conductive semiconductor layer and the second conductive semiconductor layer may be variously determined according to a process according to a process operator's selection.

In addition, the above-described embodiments of the present invention have been described with respect to a light emitting diode that continuously uses a substrate used to grow semiconductor layers, but the present invention is not limited thereto. That is, for example, after the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed on the first substrate (the sacrificial substrate), a metal layer is formed on the second conductive semiconductor layer, and the second substrate (the support substrate) is formed. Substrate), and then separating the first substrate used to grow the semiconductor layers using LLO, and then separating the individual substrates into individual devices using laser scribing for each of the light emitting cell regions with respect to the supporting substrate. Even in the case of providing a light emitting diode, it may be appropriately modified and used.

In addition, in other embodiments of the present invention, as shown in FIGS. 11 and 12, the substrate 51 may be implemented as a PSS substrate.

In addition, in the above-described embodiments of the present invention, the lower portion of the sidewall of the first conductivity-type semiconductor layer 55 by the wet etching process has a lower portion inclined inward toward the substrate 51. Although described with respect to, the present invention is not limited thereto. That is, as shown in FIG. 14, the sidewalls including the first conductivity-type semiconductor layer 55, the active layer 57, and the second semiconductor layer 59 are inclined inwardly toward the substrate 51. Even in the case of providing a diode, it can be modified and used as appropriate. Furthermore, a part or all of the sidewalls of the first conductivity-type semiconductor layer 55 may be formed to be inclined according to the progress of the wet etching process, and a portion or the entirety of the active layer 57 or the second semiconductor layer 59 may be inclined. It may be formed to be inclined over.

1 is a cross-sectional view illustrating a light emitting diode according to an embodiment of the present invention.

2 to 7 are cross-sectional views illustrating a method for manufacturing a light emitting diode according to an embodiment of the present invention.

8 is a graph showing the distribution of leakage current before and after the etching process according to the present invention.

9 is a view illustrating cleaved surfaces of a semiconductor layer and a substrate before an etching process according to the present invention.

10 is a view showing cleaved surfaces of a semiconductor layer and a substrate after an etching process according to the present invention.

11 to 14 are cross-sectional views illustrating light emitting diodes according to other exemplary embodiments of the present invention.

Claims (15)

Board; And A first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer formed on the substrate, At least one surface of the first conductivity type semiconductor layer has sidewalls formed by scribing, And the sidewalls have an etched surface. The method according to claim 1, The sidewalls of the first conductivity-type semiconductor layer are formed to be inclined inwardly closer to the substrate. The method according to claim 2, And the substrate has a portion exposed by an inclined portion of the sidewall of the first conductivity type semiconductor layer. The method according to claim 1, And the etched surface of the sidewall is a surface formed by etching along the crystal surface of the first conductivity-type semiconductor layer. The method according to claim 1, At least one surface of the active layer and the second conductivity type semiconductor layer has a sidewall formed by the scribing, and the sidewall has an etched surface. The method according to claim 5, The sidewalls of the first conductivity type semiconductor layer, the active layer and the second conductivity type semiconductor layer are inclined inwardly toward the substrate. The method according to claim 1, The substrate is a light emitting diode, characterized in that the substrate on which at least one PSS pattern is formed. Forming semiconductor layers including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer on the substrate; Scribing the substrate on which the semiconductor layers are formed for each light emitting cell region; And Wet etching the side wall of the light emitting cell having a portion deformed or modified by the scribing method. The method according to claim 8, The wet etching step, The method of manufacturing a light emitting diode, characterized in that to proceed to remove the modified or modified portion of the side wall of the light emitting cell by the scribing step. The method according to claim 8, The wet etching step, At least a sidewall of the first conductivity type semiconductor layer is formed to be inclined inwardly toward the substrate. The method according to claim 8, The scribing, After the forming of the semiconductor layers, scribing for each of the light emitting cell regions to reach the substrate via a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer; And the sidewalls of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed by the scribing. The method of claim 11, The wet etching step, And the sidewalls of the first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer are formed to be inwardly inclined toward the substrate. The method according to claim 8, After forming the semiconductor layers, Mesa etching the semiconductor substrate to expose the first conductivity type semiconductor layer for each light emitting cell region; The scribing may include scribing the substrate on which the exposed first conductive semiconductor layer is formed for each light emitting cell region. The method according to claim 8, The etching solution used for the wet etching method of manufacturing a light emitting diode, characterized in that it comprises one or more of KOH, NaOH, H 3 PO 4 , H 2 SO 4 . The method according to claim 8, And after the wet etching step, breaking the scribed substrate into separate devices.
KR20090003182A 2009-01-15 2009-01-15 Light emitting diode and method for fabricating the same KR101205527B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR20090003182A KR101205527B1 (en) 2009-01-15 2009-01-15 Light emitting diode and method for fabricating the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR20090003182A KR101205527B1 (en) 2009-01-15 2009-01-15 Light emitting diode and method for fabricating the same

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020110003095A Division KR20110010142A (en) 2011-01-12 2011-01-12 Light emitting diode

Publications (2)

Publication Number Publication Date
KR20100083879A true KR20100083879A (en) 2010-07-23
KR101205527B1 KR101205527B1 (en) 2012-11-27

Family

ID=42643435

Family Applications (1)

Application Number Title Priority Date Filing Date
KR20090003182A KR101205527B1 (en) 2009-01-15 2009-01-15 Light emitting diode and method for fabricating the same

Country Status (1)

Country Link
KR (1) KR101205527B1 (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173416A3 (en) * 2011-06-15 2013-03-28 Seoul Opto Device Co., Ltd. Semiconductor light emitting device and method of menufacturing the same
CN105514242A (en) * 2011-10-27 2016-04-20 广镓光电股份有限公司 Semiconductor light emitting diode structure
KR20220123614A (en) * 2016-12-16 2022-09-08 니치아 카가쿠 고교 가부시키가이샤 Method for manufacturing light emitting element
US11855238B2 (en) 2016-12-16 2023-12-26 Nichia Corporation Light emitting element

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012173416A3 (en) * 2011-06-15 2013-03-28 Seoul Opto Device Co., Ltd. Semiconductor light emitting device and method of menufacturing the same
CN105514242A (en) * 2011-10-27 2016-04-20 广镓光电股份有限公司 Semiconductor light emitting diode structure
KR20220123614A (en) * 2016-12-16 2022-09-08 니치아 카가쿠 고교 가부시키가이샤 Method for manufacturing light emitting element
US11855238B2 (en) 2016-12-16 2023-12-26 Nichia Corporation Light emitting element

Also Published As

Publication number Publication date
KR101205527B1 (en) 2012-11-27

Similar Documents

Publication Publication Date Title
KR100661614B1 (en) Nitride semiconductor light emitting device and method of manufacturing the same
CN101494267A (en) Method for manufacturing gallium nitride-based light-emitting device based on substrate stripping
JP2005012188A (en) Manufacturing method for semiconductor device
TWI408832B (en) Light emitting device having pillar structure with hollow structure and the forming method thereof
KR20120092326A (en) Non-polar light emitting diode having photonic crystal structure and method of fabricating the same
US20150129915A1 (en) Light-emitting diode provided with substrate having pattern on rear side thereof, and method for manufacturing same
KR20110066311A (en) Semiconductor light emitting device and method for manufacturing thereof
KR101507129B1 (en) Light emitting diode and method for fabricating the same
KR20080096997A (en) Method for forming the light emitting diode device
KR100661960B1 (en) Light emitting diode and manufacturing method thereof
KR101205527B1 (en) Light emitting diode and method for fabricating the same
KR100897871B1 (en) Light emitting diode and method of fabrication thereof
KR101425167B1 (en) Menufacturing Method of Nitride Semiconductor Light Emitting Device and Nitride Semiconductor Light Emitting Device by the Same
KR100815226B1 (en) Method of manufacturing gan type light emitting diode device
KR20100049274A (en) Nitride semiconductor light emitting device and method of manufacturing the same
KR100999695B1 (en) Semiconductor light emitting device and fabrication method thereof
KR101316121B1 (en) Method of fabricating vertical light emitting diode
JP2007042944A (en) Method of manufacturing nitride semiconductor element
KR100781660B1 (en) Light emitting device having light emitting band and the method therefor
KR101259991B1 (en) Method for fabricating a compound semiconductor device
KR20110010142A (en) Light emitting diode
KR101012638B1 (en) Method for fabricating vertical GaN-based light emitting diode
KR101381989B1 (en) Light emitting diode and method for fabricating the same
KR101165256B1 (en) High efficiency light emitting device and method for fabricating the same
KR100730755B1 (en) Method for fabricating a vertical light emitting device and vertical light emitting device thereby

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
A107 Divisional application of patent
E902 Notification of reason for refusal
E90F Notification of reason for final refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20150924

Year of fee payment: 4

FPAY Annual fee payment

Payment date: 20160907

Year of fee payment: 5

FPAY Annual fee payment

Payment date: 20170911

Year of fee payment: 6