KR20100079153A - Method and apparatus for forming pattern semiconductor device - Google Patents

Method and apparatus for forming pattern semiconductor device Download PDF

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Publication number
KR20100079153A
KR20100079153A KR1020080137568A KR20080137568A KR20100079153A KR 20100079153 A KR20100079153 A KR 20100079153A KR 1020080137568 A KR1020080137568 A KR 1020080137568A KR 20080137568 A KR20080137568 A KR 20080137568A KR 20100079153 A KR20100079153 A KR 20100079153A
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KR
South Korea
Prior art keywords
magnetic fluid
film
wafer
pattern
photosensitive film
Prior art date
Application number
KR1020080137568A
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Korean (ko)
Inventor
정호석
Original Assignee
주식회사 동부하이텍
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Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020080137568A priority Critical patent/KR20100079153A/en
Publication of KR20100079153A publication Critical patent/KR20100079153A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE: A method and an apparatus for forming pattern semiconductor device are provided to form a pattern with a relatively low cost by shortening the process while minimizing the consumption of the photosensitive film using the magnetic fluid. CONSTITUTION: A magnetic fluid shaping section(110) forms the magnetic fluid film on the upper side of a wafer. A magnetic fluid pattern shape part(120) patterns the magnetic fluid film. A photosensitive film shaping section(130) fills the photosensitive film between the patterns of the magnetic fluid film. The photosensitive film hard spots(140) makes the photosensitive film the hardening. The magnetic fluid delete(150) eliminates the magnetic fluid film from wafer.

Description

TECHNICAL AND APPARATUS FOR FORMING PATTERN SEMICONDUCTOR DEVICE

The present invention relates to a pattern forming apparatus and method of a semiconductor device, and more particularly to a pattern forming apparatus and method of a semiconductor device that minimizes the consumption of the photosensitive film using a magnetic fluid (magnetic fluid).

It is well known that various patterns of semiconductor devices are formed by photolithography techniques. According to the photolithography technique, a photosensitive film whose solubility is changed by irradiation with light such as X-rays, lasers, ultraviolet rays, or the like is formed on a film on which a pattern such as an insulating film or a conductive film on a semiconductor wafer is to be formed, and a predetermined portion of the photosensitive film is photographed. After exposure using a mask, a portion having a high solubility is removed from the developer to form a photoresist pattern, and an exposed portion of the film to be formed is removed by etching to form various patterns such as wiring and electrodes.

1 is a flowchart illustrating a method of forming a pattern of a semiconductor device according to the prior art.

First, a photoresist is formed on the upper surface of a wafer for manufacturing a semiconductor device through spin coating or the like to form a photoresist film (S11), and a soft bake process is performed (S12). ).

Then, a pattern forming photo mask is disposed on the wafer that has undergone the soft baking process (S13), and an exposure process of irradiating ultraviolet rays from the upper portion of the photomask is performed (S14). Here, ultraviolet light is irradiated on the photosensitive film of the wafer by the exposure process similarly to the opening pattern of the photomask.

Thereafter, when the photoresist film is removed, the same photoresist pattern as the opening pattern of the photo mask is formed on the wafer (S15), and the photoresist pattern is cured through a hard bake process (S16).

When the wafer is etched using the photosensitive film pattern thus formed, a pattern is formed on the wafer.

According to the conventional pattern forming method described above, an expensive photosensitive film, that is, a photoresist is consumed a lot, and a high cost is accompanied by using various devices for various steps such as soft baking and exposure processes. There was this.

The present invention has been proposed to solve such a problem of the prior art, it is possible to form a pattern at a relatively low cost by shortening the process while minimizing the consumption of the photosensitive film using a magnetic fluid.

According to a first aspect of the present invention, a pattern forming apparatus of a semiconductor device includes a magnetic fluid forming portion capable of forming a magnetic fluid film on an upper surface of a wafer, a magnetic fluid pattern forming portion capable of patterning the magnetic fluid film, and the magnetic fluid. And a photosensitive film forming portion capable of filling the photosensitive film between the patterns of the film, a photosensitive film curing portion capable of curing the photosensitive film, and a magnetic fluid removing portion capable of removing the magnetic fluid film from the wafer.

The magnetic fluid pattern forming unit may include a pattern forming mask on the wafer, a magnetic field generating source on the pattern forming mask, and a magnetic field generated by the magnetic field generating source. It may be applied to the magnetic fluid film through.

The magnetic fluid removing unit may recover the magnetic fluid film and provide the magnetic fluid film to the magnetic fluid forming unit.

Forming a magnetic fluid film on the top surface of the wafer, patterning the magnetic fluid film, filling a photosensitive film between the patterns of the magnetic fluid film, and curing the photosensitive film as a second aspect of the present invention; And removing the magnetic fluid film.

Here, in the patterning, a magnetic field is applied to the magnetic fluid film through a pattern forming mask disposed on the wafer.

The removing may be used to recover the magnetic fluid film to form the magnetic fluid film.

According to the present invention, the magnetic fluid is used to shorten the process while minimizing the consumption of the photosensitive film.

Therefore, as the consumption of the photosensitive film is reduced, it is possible to form a pattern at a relatively low cost as compared with the prior art.

In addition, there is no need to perform a soft baking and exposure process, so that the process is simplified to form a pattern at a relatively low cost as compared to the prior art, and the manufacturing time is shortened, thereby improving the yield.

Hereinafter, some embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, in describing the present invention, when it is determined that the detailed description of the related known configuration or function may obscure the gist of the present invention, the detailed description thereof will be omitted.

2 is a block diagram of a pattern forming apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

As described above, the pattern forming apparatus 100 of the present invention includes the magnetic fluid film forming unit 110, the magnetic fluid pattern forming unit 120, the photosensitive film forming unit 130, the photosensitive film curing unit 140, and the magnetic fluid agent. Denial 150, and so forth. In FIG. 2, reference numeral 101 is a magnetic fluid supply part, 102 is a wafer transfer part, and 103 is a wafer unloading port.

The magnetic fluid film forming unit 110 forms a magnetic fluid film by applying a magnetic fluid supplied from the magnetic fluid supply unit 101 to the upper surface of the wafer loaded by the wafer transfer unit 102 through a process such as spin coating.

When the wafer on which the magnetic fluid film is formed is introduced by the wafer transfer part 102, the magnetic fluid pattern forming unit 120 arranges a mask for pattern formation on the upper portion thereof, and a magnetic field generating source on the pattern forming mask, and the magnetic field The magnetic fluid generated by the generation source is applied to the magnetic fluid film through the pattern forming mask to pattern the magnetic fluid film.

The photosensitive film forming unit 130 fills the photosensitive film between the patterns of the magnetic fluid film by applying the photosensitive film through a process such as spin coating when the wafer on which the magnetic fluid film is patterned is introduced by the wafer transfer part 102. For example, a photoresist may be used for the photoresist. Photoresist is poly hydroxy styrene, poly acrylate, poly meth acrylate, poly norbornene, poly maleic anhydro-based Any one of poly maleic anhydro, poly vinyl phenol, poly adaman, poly imide, and poly fluorine may be used.

The photosensitive film curing unit 140 cures the photosensitive film through a process such as a hard bake when the wafer on which the photosensitive film is formed is introduced by the wafer transfer unit 102.

The magnetic fluid removing unit 150 recovers the magnetic fluid film applied to the upper surface of the wafer by using the magnetic field of the electromagnet or permanent magnet when the wafer on which the photosensitive film is cured is introduced by the wafer transfer part 102, and leaves only the patterned photosensitive film. .

Thereafter, the wafer transfer part 102 carries out the wafer, on which the patterned photoresist remains, to the outside through the wafer unloading port 103.

3A to 3E are flowcharts illustrating a method of forming a pattern for manufacturing a semiconductor device according to an embodiment of the present invention.

The pattern forming method of the present invention to be described with reference to the process diagrams of FIGS. 3A to 3E includes forming a magnetic fluid film on the upper surface of the wafer (FIG. 3A) and through a mask for pattern formation disposed on the magnetic fluid film. Patterning by applying a magnetic field to the magnetic fluid film (FIG. 3B, 3C), filling the photosensitive film between the patterns of the magnetic fluid film (FIG. 3D), curing the photosensitive film, and removing the magnetic fluid film to remove the wafer. Leave the photoresist pattern on the upper surface of the (Fig. 3e).

Referring to FIGS. 2 and 3A to 3E, the pattern formation process according to the embodiment of the present invention comprising the above process steps is as follows.

First, when the wafer transfer unit 102 loads the wafer 201 and enters the magnetic fluid film forming unit 110, the magnetic fluid film forming unit 110 may be provided with the magnetic fluid supply unit 101 on an upper surface of the loaded wafer 201. The magnetic fluid supplied from the film is applied through a process such as spin coating to form the magnetic fluid film 202 (see FIG. 3A).

When the wafer transfer unit 102 transfers the wafer 201 having the magnetic fluid film 202 formed therein and enters the magnetic fluid pattern forming unit 120, the magnetic fluid pattern forming unit 120 is disposed on the magnetic fluid film 202. The pattern forming mask 203 is disposed, and the magnetic field generating source 204 is disposed on the pattern forming mask 203 (see FIG. 3B).

Subsequently, the magnetic fluid pattern forming unit 120 applies the magnetic field generated by the magnetic field generating source 204 to the magnetic fluid film 202 through the pattern forming mask 203 to pattern the magnetic fluid film 202 (FIG. 3c).

When the wafer transfer unit 102 transfers the wafer 201 in which the magnetic fluid film 202 is patterned and enters the photosensitive film forming unit 130, the photosensitive film forming unit 130 may spin the photosensitive film 205 through a process such as spin coating. The coating is performed to fill the photosensitive film 205 between the patterns of the magnetic fluid film 202.

Next, when the wafer transfer unit 102 transfers the wafer 201 on which the photoresist film 205 is formed and enters the photoresist film curing unit 140, the photosensitive film curing unit 140 opens the photoresist film 205 through a process such as hard baking. Cure (see FIG. 3D).

When the wafer transfer unit 102 transfers the wafer 201 having the photosensitive film 205 cured therein and enters the magnetic fluid removal unit 150, the magnetic fluid removal unit 150 uses a magnetic field generated by an electromagnet or a permanent magnet. The magnetic fluid film 202 applied to the upper surface of the wafer 201 is recovered, leaving only the patterned photosensitive film 205 (see FIG. 3E). The recovered magnetic fluid film 202 is provided to the magnetic fluid film forming unit 110 through the magnetic fluid supply unit 101. That is, the recovered magnetic fluid film 202 can be used for recycling by the magnetic fluid supply part 101.

Finally, the wafer transfer part 102 carries out the wafer 201 on which the patterned photoresist 205 remains, to the outside through the wafer unloading port 103.

It has been described so far limited to one embodiment of the present invention, it is obvious that the technology of the present invention can be easily modified by those skilled in the art. Such modified embodiments should be included in the technical spirit described in the claims of the present invention.

1 is a flowchart illustrating a method of forming a pattern of a semiconductor device according to the prior art.

2 is a block diagram of a pattern forming apparatus for manufacturing a semiconductor device according to an embodiment of the present invention.

3A to 3E are flowcharts illustrating a method of forming a pattern for manufacturing a semiconductor device according to an embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: pattern forming apparatus 110: magnetic fluid film forming unit

120: magnetic fluid pattern forming portion 130: photosensitive film forming portion

140: photosensitive film hardened portion 150: magnetic fluid removal portion

201: wafer 202: magnetic fluid film

203: mask for pattern formation 204: magnetic field generating source

205 photosensitive film

Claims (6)

A magnetic fluid forming portion capable of forming a magnetic fluid film on the upper surface of the wafer, A magnetic fluid pattern forming unit capable of patterning the magnetic fluid film; A photosensitive film forming unit capable of filling the photosensitive film between the patterns of the magnetic fluid film; And a photosensitive film hardening part which can harden the said photosensitive film, Magnetic fluid removal unit capable of removing the magnetic fluid film from the wafer Pattern forming apparatus of a semiconductor device comprising a. The method of claim 1, The magnetic fluid pattern forming unit may include a pattern forming mask on the wafer, a magnetic field generating source on the pattern forming mask, and a magnetic field generated by the magnetic field generating source through the pattern forming mask. Applicable to the magnetic fluid film Pattern forming apparatus of semiconductor element. The method of claim 1, The magnetic fluid removing unit may recover the magnetic fluid film and provide the magnetic fluid film to the magnetic fluid forming unit. Pattern forming apparatus of semiconductor element. Forming a magnetic fluid film on the upper surface of the wafer, Patterning the magnetic fluid film; Filling the photosensitive film between the patterns of the magnetic fluid film; Curing the photosensitive film; Removing the magnetic fluid film Pattern forming method of a semiconductor device comprising a. The method of claim 4, wherein The patterning may include applying a magnetic field to the magnetic fluid film through a pattern forming mask disposed on the wafer. Pattern formation method of a semiconductor device. The method of claim 4, wherein The removing may include recovering the magnetic fluid film to form the magnetic fluid film. Pattern formation method of a semiconductor device.
KR1020080137568A 2008-12-30 2008-12-30 Method and apparatus for forming pattern semiconductor device KR20100079153A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080137568A KR20100079153A (en) 2008-12-30 2008-12-30 Method and apparatus for forming pattern semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080137568A KR20100079153A (en) 2008-12-30 2008-12-30 Method and apparatus for forming pattern semiconductor device

Publications (1)

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KR20100079153A true KR20100079153A (en) 2010-07-08

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KR1020080137568A KR20100079153A (en) 2008-12-30 2008-12-30 Method and apparatus for forming pattern semiconductor device

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