KR20100078785A - Method for manufacturing electrophoretic display device - Google Patents

Method for manufacturing electrophoretic display device Download PDF

Info

Publication number
KR20100078785A
KR20100078785A KR1020080137145A KR20080137145A KR20100078785A KR 20100078785 A KR20100078785 A KR 20100078785A KR 1020080137145 A KR1020080137145 A KR 1020080137145A KR 20080137145 A KR20080137145 A KR 20080137145A KR 20100078785 A KR20100078785 A KR 20100078785A
Authority
KR
South Korea
Prior art keywords
plate
forming
electrophoretic
film
display device
Prior art date
Application number
KR1020080137145A
Other languages
Korean (ko)
Inventor
권오남
Original Assignee
엘지디스플레이 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지디스플레이 주식회사 filed Critical 엘지디스플레이 주식회사
Priority to KR1020080137145A priority Critical patent/KR20100078785A/en
Publication of KR20100078785A publication Critical patent/KR20100078785A/en

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/166—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect
    • G02F1/167—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field characterised by the electro-optical or magneto-optical effect by electrophoresis
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/165—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on translational movement of particles in a fluid under the influence of an applied field
    • G02F1/1675—Constructional details
    • G02F2001/1678—Constructional details characterised by the composition or particle type

Abstract

The present invention relates to a method of manufacturing an electrophoretic display device, and a method of manufacturing an electrophoretic display device according to the present invention includes an upper array provided with a second plate and an electrophoretic film, in which neighboring steps are removed from each other on a first plate. Forming a portion, forming a plurality of lower array portions on a mother substrate, bonding the lower array portion and the upper array portion to correspond to the lower array portion and the electrophoretic film, and Forming a color filter pattern.

Description

Method for manufacturing electrophoretic display device

The present invention relates to a method of manufacturing a display device, and more particularly to a method of manufacturing an electrophoretic display device.

Conventional electrophoretic display devices (EPDs) have excellent flexibility and portability, and have electrophoresis characteristics such as light weight (Electrophoresis: a phenomenon in which charged particles move toward an anode or a cathode in an electric field). It is a kind of flat panel display using.

The electrophoretic display device is a display that forms a thin film transistor array on a thin, bendable base film such as paper or plastic and drives electrophoretic floating particles by a vertical electric field between the pixel electrode and the common electrode of the thin film transistor array. It is a display element that is also expected as paper.

In addition, color can be implemented by introducing a color filter array into the electrophoretic display device.

The following is a cross-sectional view showing an electrophoretic display device in which a color filter array according to the prior art is introduced.

The electrophoretic display device illustrated in FIG. 1 is divided into a lower array unit 60 and an upper array unit 80.

First, the lower array unit 60 may include a gate line (not shown) and a data line (not shown) formed to intersect the gate insulating layer 44 on the lower plate 42, and a thin film transistor formed at each intersection thereof. Thin Film Transistor (hereinafter referred to as " TFT ") 6 and a pixel electrode 18 formed in a cell region provided in a cross structure thereof.

The bottom plate 42 is made of flexible plastic, easily bent base film, flexible metal, or the like.

The TFT 6 includes a gate electrode 8 to which a gate voltage is supplied, a source electrode 10 connected to a data line, a drain electrode 12 connected to a pixel electrode 18, a gate electrode 8, An active layer 14 is provided that overlaps and forms a channel between the source electrode 10 and the drain electrode 12.

The active layer 14 is formed to overlap the source electrode 10 and the drain electrode 12, and further includes a channel portion between the source electrode 10 and the drain electrode 12. An ohmic contact layer 48 for ohmic contact with the source electrode 10 and the drain electrode 12 is further formed on the active layer 14. Here, the active layer 14 and the ohmic contact layer 48 are commonly referred to as a semiconductor pattern 45.

The pixel electrode 18 is in contact with the drain electrode 12 through the contact hole 17 exposing the drain electrode 12 through the protective film 50 protecting the TFT 6.

The upper array unit 80 includes a common electrode 99, a color filter pattern 98 formed on the common electrode 99, and an electrophoretic film 90 positioned on the color filter pattern 98. .

The electrophoretic film 90 includes a capsule 92 including charged pigment particles, and upper and lower protective layers 96 and 94 positioned above and below the capsule 92.

The capsule 92 includes black dye particles 92a in response to a positive voltage, white dye particles 92b in response to a negative voltage, and a solvent 92c.

The upper and lower protective layers 96 and 94 block the flow of the spherical capsule 92 and serve to protect the capsule 92. The upper and lower protective layers 96, 94 are made of flexible plastic, easily bent base film, flexible metal, or the like.

The upper array portion 80 and the lower array portion 60 having such a structure are bonded together by an adhesive 86 to form an electrophoretic display element.

The electrophoretic display device includes a pixel voltage signal supplied to a data line in response to a gate voltage supplied to the gate electrode 8 of the lower array unit 60 to the pixel electrode 18 via a channel of the TFT 6. When charged and the reference voltage is supplied to the common electrode 99 of the upper array unit 80, the white dye particles 92b and the black dye particles 92a in the capsule 92 are formed by the electrophoretic phenomenon caused by the electric field. It is possible to realize black or white while dividing.

An electrophoretic display device having such a structure typically fixes the lower plate 42 on one large mother glass substrate to perform a process of forming the electrophoretic display device.

Meanwhile, the method of simultaneously producing a plurality of unit electrophoretic display elements on one large mother glass substrate is called a multi-faceted method. The multi-faceted chamfering method can be divided into two chamfered, four chamfered, six chamfered according to the number of unit electrophoretic display elements.

As described above, when the unit electrophoretic display device is manufactured by the multifaceted method, the following problems occur.

As shown in FIG. 2, the electrophoretic film 90 and the color filter pattern provided with the lower array unit 60 having the thin film transistor, the pixel electrode, etc., the protective layer and the capsule, etc., on the mother glass substrate 1 are provided. 98 is formed sequentially.

In this case, the color filter pattern 98 is formed by depositing a color filter resin on the electrophoretic film 90 by a method such as spin coating or slit coating and then patterning.

However, due to the electrophoretic film having a thickness of about 30 ~ 100㎛, a step is generated between the region in which the electrophoretic film 90 and the lower array portion 60 of the mother glass substrate is formed and the region is not formed, When the color filter resin is deposited on the entire surface of the mother glass substrate 1 having such a step by spin coating or slit coating, the color filter resin may be formed due to the uncoated area of the color filter resin and the particle generation of the resin. There is a problem that causes poor coating.

SUMMARY OF THE INVENTION An object of the present invention for solving the above problems is to reduce the step difference between the area where the electrophoretic film and the lower array part are formed and the area where they are not formed during the manufacturing process of the electrophoretic display device through the multi-faceted method. The present invention provides a method of manufacturing an electrophoretic display device which can prevent a coating defect.

According to another aspect of the present invention, there is provided a method of manufacturing an electrophoretic display device, including: forming an upper array unit including a second plate and an electrophoretic film from which a step is removed adjacent to each other on a first plate; Forming a plurality of lower array portions on a substrate, bonding the lower array portion and the upper array portion to correspond to the lower array portion and the electrophoretic film, and forming a color filter pattern on the upper array portion. Steps.

The forming of the upper array unit including the second plate and the electrophoretic film having the step difference adjacent to each other on the first plate may include forming a second plate on the first plate, and forming the second plate. Patterning to remove a portion of the second plate, forming an electrophoretic film on the portion of the removed second plate, and forming a protective plate on the electrophoretic film and the second plate. Include.

The first plate further includes a transparent electrode film, and forms the color filter pattern on the protective plate.

The forming of the lower array unit may include forming a thin film transistor including a gate electrode, a source electrode, and a drain electrode, and forming a passivation layer formed on the thin film transistor and having a contact hole penetrating through the drain electrode. And forming a pixel electrode electrically connected to the drain electrode.

In the method of manufacturing the electrophoretic display device according to the present invention as described above, by forming a second plate having a thickness corresponding to the electrophoretic film in the region adjacent to the electrophoretic film, In the manufacturing process, the step difference between the region where the electrophoretic film is formed and the region that is not formed is removed, and the coating defect of the color filter resin deposited on the protective plate is prevented.

Hereinafter, a method of manufacturing an electrophoretic display device will be described in detail with reference to the accompanying drawings.

3A to 7A are plan views schematically illustrating a method of manufacturing an electrophoretic display device according to the present invention, and FIGS. 3B to 7B are cross-sectional views taken along line II ′ of FIGS. 3A to 7A.

As shown in FIGS. 3A and 3B, the second plate 103 is formed on the first plate 101 provided with the transparent electrode film 102.

The first plate 101 and the second plate 103 are insulated plates, and flexible plastics, easily bent base films, and the like may be used.

The transparent electrode film 102 is used as a common electrode for forming an electric field together with the pixel electrodes 160 of FIG. 8 in the lower array unit.

The formation of the second plate 103 on the first plate 101 is formed by adhering the second plate 103 coated with an adhesive onto the first plate 101 through a laminating process.

At this time, the second plate 103 is formed to have a thickness of about 50 to 100% of the thickness of the electrophoretic film (105 in Figure 5b) to be formed later.

Subsequently, as shown in FIGS. 4A and 4B, the second plate 103 is selectively patterned to remove the partial region A. Referring to FIG. In this case, the partial region A of the removed second plate 103 corresponds to the lower plate size of the lower array unit 160 (FIG. 8) formed thereafter.

As a partial region of the second plate 103 is removed, the transparent electrode film 102 formed on the first plate 101 is exposed.

Next, as shown in FIGS. 5A and 5B, the electrophoretic film 105 is formed in the partial region A of the removed second plate 103.

The electrophoretic film 105 consists of a capsule containing black dye particles reacting with a positive voltage and white dye particles reacting with a negative voltage and a solvent.

The electrophoretic film 105 is formed by coating the capsule on a portion A of the removed second plate 103 through a bar coating and a comma coating method.

At this time, in the process of forming the electrophoretic film, the second plate 103 left as a partition wall can prevent the electrophoretic film 105 from being formed other than the A region.

In addition, since the electrophoretic film 150 is adjacent to the second plate 103, the step difference between the regions in which the electrophoretic film 150 is formed is minimized.

Subsequently, the protective plate 106 is formed on the second plate 103 on which the electrophoretic film 105 is formed.

The protective plate 106 serves to block the flow of the capsule constituting the electrophoretic film 105 and to protect the capsule.

The protective plate 106 is made of flexible plastic, easily bent base film, or flexible metal.

Accordingly, the upper array unit 100 in which the first plate 101 on which the transparent electrode film 102 is formed, the second plate 103 from which some regions are removed, the electrophoretic film 105, and the protection plate 106 are stacked. Is formed.

6A and 6B, a plurality of lower array units 160 are formed on the mother glass substrate 107.

The lower array unit 160 is formed on each of the plurality of lower plates 142 formed on the mother glass substrate 107.

The lower plate 142 is made of flexible plastic, easily bent base film, flexible metal, or the like.

In addition, a gate line (not shown) and a data line (not shown) formed to intersect on the lower plate 142 with the gate insulating layer 144 interposed therebetween, and a thin film transistor formed at each crossing portion thereof. 106, and the pixel electrode 118 formed in the cell region provided in the intersection structure.

The TFT 106 includes a gate electrode 108 to which a gate voltage is supplied, a source electrode 110 connected to a data line, a drain electrode 112 connected to a pixel electrode 118, and a gate electrode 118. An active layer 114 overlapping and forming a channel between the source electrode 110 and the drain electrode 112 is provided.

The active layer 114 is formed to overlap the source electrode 110 and the drain electrode 112 and further includes a channel portion between the source electrode 110 and the drain electrode 112. An ohmic contact layer 148 for ohmic contact with the source electrode 110 and the drain electrode 112 is further formed on the active layer 114. Here, the active layer 114 and the ohmic contact layer 148 are commonly referred to as a semiconductor pattern 145.

The pixel electrode 118 is in contact with the drain electrode 112 through the contact hole 117 exposing the drain electrode 112 through the passivation layer 150 protecting the TFT 106.

In the forming process of the lower array unit 160 as described above, the forming process of the alignment key 111 is simultaneously performed in the outer region of the mother glass substrate 107, and the alignment key 111 forms the color filter. In the process, it is formed to align with the lower array portion 160.

Subsequently, the upper array unit 100 formed as described above is formed on the lower array unit 160 of the mother glass substrate 107.

In this case, the first plate 101 of the upper array unit 100 is positioned at the top, and the protective plate 106 is in contact with the protective layer 150 which is the uppermost layer of the lower array unit 160.

The formation of the upper array unit 100 on the lower array unit 160 is formed by bonding by a laminating process through an adhesive.

Next, as shown in FIGS. 7A and 7B, the process is completed by forming the color filter pattern 180 on the protection plate 106 of the upper array unit 100.

The color filter pattern is formed by depositing and patterning the color filter resin on the protective plate 106 by a method such as spin coating or slit coating.

At this time, since the protection plate 106 is supported by the second plate 103 formed below and the electrophoretic film 105, the step difference generated between the region where the electrophoretic film is formed and the region where the electrophoretic film is not formed is removed.

Therefore, the coating defect of the color filter resin deposited on the protective plate 106 can be prevented, thereby preventing the color filter pattern from being defective.

Meanwhile, a passivation layer (not shown) may be further formed on the color filter pattern 180 to protect the color filter pattern 180.

On the other hand, as described above, in the embodiment of the present invention has been described a two chamfering method for manufacturing two electrophoretic display elements having the same size on one mother glass substrate, four chamfering on one mother glass substrate, It can be applied to various multi-faceted chamfering methods such as 6 chamfering, and can also manufacture two or more electrophoretic display elements having various sizes on one mother glass substrate.

1 is a cross-sectional view illustrating an electrophoretic display device having a color filter array according to the related art.

2 is a cross-sectional view of an electrophoretic display device according to an exemplary embodiment of the prior art;

3A to 7A are plan views schematically illustrating a method of manufacturing an electrophoretic display device according to the present invention.

3B to 7B are cross-sectional views taken along line II ′ of FIGS. 3A to 7A.

8 is a cross-sectional view showing a lower array of the electrophoretic display device according to the present invention.

Claims (5)

Forming an upper array unit on which the second plate and the electrophoretic film are removed, adjacent to each other on the first plate; Forming a plurality of lower array portions on the mother substrate; Bonding the lower array portion and the upper array portion to correspond to the lower array portion and the electrophoretic film; And forming a color filter pattern on the upper array portion. The method of claim 1, wherein the forming of the upper array unit including the second plate and the electrophoretic film from which the step is removed adjacent to each other on the first plate is performed. Forming a second plate on the first plate; Patterning the second plate to remove a portion of the second plate; Forming an electrophoretic film on a portion of the removed second plate; Forming a protective plate on the electrophoretic film and the second plate manufacturing method of an electrophoretic display device. The method of claim 2, wherein the first plate further comprises a transparent electrode film. The method of claim 2, wherein the color filter pattern is formed on the protective plate. The method of claim 1, wherein the forming of the lower array portion Forming a thin film transistor including a gate electrode, a source electrode, and a drain electrode; Forming a passivation layer formed on the thin film transistor and having a contact hole penetrating the drain electrode; And forming a pixel electrode electrically connected to the drain electrode.
KR1020080137145A 2008-12-30 2008-12-30 Method for manufacturing electrophoretic display device KR20100078785A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020080137145A KR20100078785A (en) 2008-12-30 2008-12-30 Method for manufacturing electrophoretic display device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020080137145A KR20100078785A (en) 2008-12-30 2008-12-30 Method for manufacturing electrophoretic display device

Publications (1)

Publication Number Publication Date
KR20100078785A true KR20100078785A (en) 2010-07-08

Family

ID=42639971

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020080137145A KR20100078785A (en) 2008-12-30 2008-12-30 Method for manufacturing electrophoretic display device

Country Status (1)

Country Link
KR (1) KR20100078785A (en)

Similar Documents

Publication Publication Date Title
CN101877319B (en) Method of manufacturing flexible display device
US8115205B2 (en) Electrophoretic display device and method of manufacturing and repairing the same
US8248686B2 (en) Color electrophoretic display device and method for manufacturing the same
US7755737B2 (en) Liquid crystal panel and method of manufacturing the same
KR20170079529A (en) Organic Light Emitting Display Device and Method for Manufacturing the Same
US8427737B2 (en) Electrophoretic display device
US8023088B2 (en) Liquid crystal display device and manufacturing method of the liquid crystal display device
JP4667505B2 (en) Display panel substrate, display panel including the substrate, display panel substrate manufacturing method, and display panel manufacturing method
US9171933B2 (en) Display device and manufacturing method thereof
US8154703B2 (en) Liquid crystal display panel
US9291841B2 (en) Display device and method of manufacturing the same
JP2006323141A (en) Liquid crystal panel and method for manufacturing the same
US9046714B2 (en) Thin film transistor substrate and method for fabricating the same
TW201812550A (en) Electronic device
US10598990B2 (en) Array substrate for liquid crystal displays and liquid crystal display including the same
US20090026451A1 (en) Thin film transistor array substrate and method for manufacturing the same
US20130057812A1 (en) Liquid crystal display and method for manufacturing the same
KR101346881B1 (en) Photo mask and manufacturing method for in plane switching mode liquid crystal display device using it
KR20100078785A (en) Method for manufacturing electrophoretic display device
KR101285638B1 (en) Electrophoretic display device and method of fabricating the same
KR20170050388A (en) Flexible Display And Method for Manufacturing the Same
KR101148500B1 (en) Electrophoretic display device and method for fabricating the same
KR20160139826A (en) Flexible Display
KR101545025B1 (en) Method of manufacturing electrophoresis display device
KR20090059875A (en) Electronic ink display device and method for fabricating the same

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination