KR20100077701A - Cmp slurry composition for polishing copper wiring and polishing method using the same - Google Patents
Cmp slurry composition for polishing copper wiring and polishing method using the same Download PDFInfo
- Publication number
- KR20100077701A KR20100077701A KR1020080135723A KR20080135723A KR20100077701A KR 20100077701 A KR20100077701 A KR 20100077701A KR 1020080135723 A KR1020080135723 A KR 1020080135723A KR 20080135723 A KR20080135723 A KR 20080135723A KR 20100077701 A KR20100077701 A KR 20100077701A
- Authority
- KR
- South Korea
- Prior art keywords
- salts
- slurry composition
- cmp slurry
- polishing
- acid
- Prior art date
Links
- 238000005498 polishing Methods 0.000 title claims abstract description 64
- 239000000203 mixture Substances 0.000 title claims abstract description 54
- 239000002002 slurry Substances 0.000 title claims abstract description 54
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 29
- 239000010949 copper Substances 0.000 title claims abstract description 27
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 title claims description 14
- 238000005260 corrosion Methods 0.000 claims abstract description 16
- 230000007797 corrosion Effects 0.000 claims abstract description 16
- 239000003945 anionic surfactant Substances 0.000 claims abstract description 12
- 239000003112 inhibitor Substances 0.000 claims abstract description 12
- 150000007524 organic acids Chemical class 0.000 claims abstract description 10
- 239000000654 additive Substances 0.000 claims abstract description 9
- 230000000996 additive effect Effects 0.000 claims abstract description 9
- 239000007800 oxidant agent Substances 0.000 claims abstract description 9
- 229910021642 ultra pure water Inorganic materials 0.000 claims abstract description 4
- 239000012498 ultrapure water Substances 0.000 claims abstract description 4
- 238000007517 polishing process Methods 0.000 claims abstract description 3
- 150000003839 salts Chemical class 0.000 claims description 48
- -1 sulfate ester salt Chemical class 0.000 claims description 19
- 150000001875 compounds Chemical class 0.000 claims description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- KMUONIBRACKNSN-UHFFFAOYSA-N potassium dichromate Chemical compound [K+].[K+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O KMUONIBRACKNSN-UHFFFAOYSA-N 0.000 claims description 6
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910019142 PO4 Inorganic materials 0.000 claims description 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 3
- 239000002253 acid Substances 0.000 claims description 3
- 150000001298 alcohols Chemical class 0.000 claims description 3
- 150000003973 alkyl amines Chemical class 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 150000001412 amines Chemical class 0.000 claims description 3
- 150000001413 amino acids Chemical class 0.000 claims description 3
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 150000003851 azoles Chemical class 0.000 claims description 3
- 239000008280 blood Substances 0.000 claims description 3
- 210000004369 blood Anatomy 0.000 claims description 3
- SXDBWCPKPHAZSM-UHFFFAOYSA-N bromic acid Chemical compound OBr(=O)=O SXDBWCPKPHAZSM-UHFFFAOYSA-N 0.000 claims description 3
- 150000001728 carbonyl compounds Chemical class 0.000 claims description 3
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 3
- XTEGARKTQYYJKE-UHFFFAOYSA-N chloric acid Chemical compound OCl(=O)=O XTEGARKTQYYJKE-UHFFFAOYSA-N 0.000 claims description 3
- 229940005991 chloric acid Drugs 0.000 claims description 3
- KRVSOGSZCMJSLX-UHFFFAOYSA-L chromic acid Substances O[Cr](O)(=O)=O KRVSOGSZCMJSLX-UHFFFAOYSA-L 0.000 claims description 3
- AWJWCTOOIBYHON-UHFFFAOYSA-N furo[3,4-b]pyrazine-5,7-dione Chemical compound C1=CN=C2C(=O)OC(=O)C2=N1 AWJWCTOOIBYHON-UHFFFAOYSA-N 0.000 claims description 3
- 150000002466 imines Chemical class 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 150000004706 metal oxides Chemical class 0.000 claims description 3
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Chemical compound O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 230000001590 oxidative effect Effects 0.000 claims description 3
- 239000010452 phosphate Substances 0.000 claims description 3
- 125000002467 phosphate group Chemical group [H]OP(=O)(O[H])O[*] 0.000 claims description 3
- 229910001404 rare earth metal oxide Inorganic materials 0.000 claims description 3
- 150000005846 sugar alcohols Polymers 0.000 claims description 3
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 3
- 229910000314 transition metal oxide Inorganic materials 0.000 claims description 3
- 150000003628 tricarboxylic acids Chemical class 0.000 claims description 3
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 125000000542 sulfonic acid group Chemical group 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 7
- 150000007942 carboxylates Chemical class 0.000 abstract description 3
- 125000001273 sulfonato group Chemical class [O-]S(*)(=O)=O 0.000 abstract 2
- 150000003014 phosphoric acid esters Chemical class 0.000 abstract 1
- 238000011156 evaluation Methods 0.000 description 8
- 239000006185 dispersion Substances 0.000 description 7
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 4
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000005751 Copper oxide Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 150000001991 dicarboxylic acids Chemical group 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N EtOH Substances CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- QFWPJPIVLCBXFJ-UHFFFAOYSA-N glymidine Chemical compound N1=CC(OCCOC)=CN=C1NS(=O)(=O)C1=CC=CC=C1 QFWPJPIVLCBXFJ-UHFFFAOYSA-N 0.000 description 2
- 125000001841 imino group Chemical group [H]N=* 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- HHYPDQBCLQZKLI-UHFFFAOYSA-N 2-[2-hydroxyethyl-[(5-methylbenzotriazol-1-yl)methyl]amino]ethanol Chemical compound CC1=CC=C2N(CN(CCO)CCO)N=NC2=C1 HHYPDQBCLQZKLI-UHFFFAOYSA-N 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 1
- 239000012964 benzotriazole Substances 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910017464 nitrogen compound Inorganic materials 0.000 description 1
- 239000002736 nonionic surfactant Substances 0.000 description 1
- 239000003002 pH adjusting agent Substances 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
본 발명은 반도체 전도층의 금속막 연마용 CMP 슬러리 조성물에 관한 것으로, 보다 상세하게는 반도체 전도층이 구리(Cu)로 형성된 금속막을 연마 대상으로 하는 CMP 슬러리 조성물 및 이를 이용한 연마 방법에 관한 것이다.The present invention relates to a CMP slurry composition for polishing a metal film of a semiconductor conductive layer, and more particularly, to a CMP slurry composition for polishing a metal film formed of copper (Cu) and a polishing method using the same.
CMP 공정이란 반도체 제조 시 웨이퍼 표면을 연마 패드(pad)와 슬러리 조성물을 이용하여 평탄화시키는 것으로, 연마 패드 및 웨이퍼를 접촉시킨 다음 연마 패드와 웨이퍼에 회전 및 직선 운동을 혼합한 오비탈 운동을 실시하면서 연마제가 포함된 슬러리 조성물을 이용하여 연마하는 공정이다. CMP 공정에 사용되는 슬러리 조성물은 크게 물리적 작용을 하는 연마 입자와 화학적 작용을 하는 에천트(etchant) 등의 화합물로 구성되어 있다. 따라서 슬러리 조성물은 물리적인 작용과 화학적 작용에 의하여 웨이퍼 표면에 노출된 부분을 선택적으로 식각하여 보다 최적화되고 광범위한 평탄화 공정을 수행한다.In the CMP process, the surface of a wafer is planarized using a polishing pad and a slurry composition during semiconductor manufacturing. The polishing agent is brought into contact with the polishing pad and the wafer and then subjected to an orbital motion in which the polishing pad and the wafer are mixed with rotational and linear motion. It is a process of polishing using a slurry composition containing. The slurry composition used in the CMP process is composed of a compound such as an abrasive which has a large physical action and an etchant which has a chemical action. Therefore, the slurry composition selectively etches the portions exposed to the wafer surface by physical and chemical action to perform a more optimized and extensive planarization process.
금속 배선 연마에 있어서는 에칭 속도는 낮으면서도 연마 속도는 높게 하는 것이 중요하다. 특히 구리 배선은 에천트 등의 케미칼에 의한 부식성이 높아 쉽게 연마속도를 높일 수는 있으나 일반적으로 에칭 속도도 같이 증가함으로써 구리 배선의 부식을 유발하게 된다. 구리 CMP 공정은 천연 패시베이션 산화물 필름(CuO 또는 Cu2O)이 형성되지 못하거나 외부의 화학적 에칭으로부터 금속을 보호하기에 충분하지 못할 정도로 적은 양으로만 형성되기 때문에 배선 부식의 문제를 종종 일으킨다. 따라서 패시베이션제나 부식 방지제가 연마 슬러리 조성물에 추가되어야 한다.In metal wire polishing, it is important to make the polishing rate high while the etching rate is low. In particular, the copper wiring is easily corroded by chemicals such as etchant, so that the polishing rate can be easily increased, but in general, the etching rate is also increased to cause corrosion of the copper wiring. The copper CMP process often causes problems with wiring corrosion because natural passivation oxide films (CuO or Cu 2 O) are not formed or are formed in such small amounts that they are not sufficient to protect the metal from external chemical etching. Therefore, a passivation or corrosion inhibitor must be added to the polishing slurry composition.
또한, 구리 배선 연마에 있어서 CMP 슬러리 조성물의 표면 장력을 낮추어 연마 후 웨이퍼 표면의 단차를 개선하기 위하여 계면활성제를 추가하고자 하는 시도가 있었으나, 연마 균일도가 향상되지 않거나 연마 시 마찰과 소음이 발생하거나 CMP 슬러리 조성물이 응집되는 등의 문제가 발생하였다.In addition, attempts have been made to add surfactants in order to lower the surface tension of the CMP slurry composition in order to improve the step height of the wafer surface after polishing in copper wire polishing, but the polishing uniformity does not improve, friction and noise occur during polishing, or CMP Problems such as aggregation of the slurry composition occurred.
본 발명은 상기와 같은 종래 기술의 문제점을 해결하기 위한 것으로, 구리 배선에 대하여 높은 연마 속도를 나타낼 뿐만 아니라, 연마 균일도가 우수하고, 연마 시 마찰과 소음이 적은 구리 배선 연마용 CMP 슬러리 조성물 및 이를 이용한 연마 방법을 제공하고자 한다.The present invention is to solve the problems of the prior art as described above, not only shows a high polishing rate for the copper wiring, but also excellent in the polishing uniformity, and a low friction and noise during polishing CMP slurry composition for polishing and To provide a polishing method used.
그러므로 본 발명에 의하면 초순수, 연마제, 산화제, 부식 억제제, 유기산, 및 첨가제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 첨가제로 음이온성 계면활성제를 전체 CMP 슬러리 조성물에 대하여 10 ~ 400ppm으로 사용하는 것을 특징으로 하는 구리 배선 연마용 CMP 슬러리 조성물이 제공된다.Therefore, according to the present invention, in the CMP slurry composition comprising ultrapure water, an abrasive, an oxidizing agent, a corrosion inhibitor, an organic acid, and an additive, an anionic surfactant is used as the additive at 10 to 400 ppm with respect to the entire CMP slurry composition. A CMP slurry composition for copper wiring polishing is provided.
상기 음이온성 계면활성제로 술폰산염, 황산에스테르염, 인산에스테르염, 및 카르복시산염으로 이루어진 그룹에서 선택되는 1종 이상을 사용하는 것을 특징으로 한다.It is characterized by using at least one member selected from the group consisting of sulfonate, sulfate ester salt, phosphate ester salt, and carboxylate as the anionic surfactant.
상기 연마제로 실리카(SiO2), 알루미나(Al2O3), 세리아(CeO2), 지르코니아(ZrO2), 티타니아(TiO2), 및 산화몰리브덴(MoO3)으로 이루어진 그룹에서 선택되는 1종 이상의 금속 산화물을 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 25 중량%로 사 용하는 것을 특징으로 한다.The abrasive is selected from the group consisting of silica (SiO 2 ), alumina (Al 2 O 3 ), ceria (CeO 2 ), zirconia (ZrO 2 ), titania (TiO 2 ), and molybdenum oxide (MoO 3 ). The above metal oxides are characterized by using 0.01 to 25% by weight based on the total CMP slurry composition.
상기 산화제로 무기 또는 유기 과화합물(per-compounds), 브롬산 또는 그 염, 질산 또는 그 염, 염소산 또는 그 염, 크롬산 또는 그 염, 요오드산 또는 그 염, 철 또는 그 염, 구리 또는 그 염, 희토류 금속 산화물, 전이 금속 산화물, 적혈염, 및 중크롬산 칼륨으로 이루어진 그룹에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 30 중량%로 사용하는 것을 특징으로 한다.Inorganic or organic per-compounds, bromic acid or salts thereof, nitric acid or salts thereof, chloric acid or salts thereof, chromic acid or salts thereof, iodic acid or salts thereof, iron or salts thereof, copper or salts thereof At least one selected from the group consisting of rare earth metal oxides, transition metal oxides, red blood salts, and potassium dichromate is used in an amount of 0.1 to 30% by weight based on the total CMP slurry composition.
상기 부식 억제제로 암모니아, 알킬아민류, 아미노산류, 이민류, 및 아졸류로 이루어진 그룹에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 3 중량%로 사용하는 것을 특징으로 한다.As the corrosion inhibitor, at least one selected from the group consisting of ammonia, alkylamines, amino acids, imines, and azoles is used at 0.001 to 3% by weight based on the total CMP slurry composition.
상기 유기산으로 카르보닐 화합물 및 그 염, 카르복시산 화합물 및 그 염(하나 이상의 수산화기를 함유하는 카르복시산 화합물 및 그 염, 디카르복시산 및 그 염, 트리카르복시산 및 그 염, 폴리카르복시산 및 그 염, 하나 이상의 술폰산기 및/또는 (아)인산기를 함유하는 카르복시산 화합물 및 그 염 등), 알콜류(디알콜, 트리알콜, 폴리알콜 등), 아민 함유 화합물로 이루어진 그룹에서 선택되는 1종 이상을 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 10 중량%로 사용하는 것을 특징으로 한다.As the organic acid, a carbonyl compound and salts thereof, carboxylic acid compounds and salts thereof (carboxylic acid compounds containing one or more hydroxyl groups and salts thereof, dicarboxylic acid and salts thereof, tricarboxylic acid and salts thereof, polycarboxylic acid and salts thereof, one or more sulfonic acid groups And / or (a) a carboxylic acid compound containing a phosphate group and a salt thereof), alcohols (dialcohol, trialcohol, polyalcohol, etc.), and an amine-containing compound with respect to the entire CMP slurry composition. It is characterized by using from 0.01 to 10% by weight.
또한, 본 발명은 상기 CMP 슬러리 조성물을 사용하여 구리 배선을 연마하는 방법을 제공한다.The present invention also provides a method for polishing copper wiring using the CMP slurry composition.
또한, 본 발명은 상기 방법을 이용하여 제조되는 반도체 소자를 제공한다.The present invention also provides a semiconductor device manufactured using the above method.
본 발명의 CMP 슬러리 조성물은 구리 배선에 대하여 높은 연마 속도를 나타낼 뿐만 아니라, 연마 균일도가 우수하고, 연마 시 마찰과 소음이 적으므로, 구리 배선 연마 공정에 유용하다.The CMP slurry composition of the present invention not only shows a high polishing rate with respect to copper wiring, but also has excellent polishing uniformity, and has little friction and noise during polishing, and thus is useful for copper wiring polishing processes.
이하 본 발명을 보다 상세히 설명하고자 한다.Hereinafter, the present invention will be described in more detail.
본 발명은 초순수, 연마제, 산화제, 부식 억제제, 유기산, 및 첨가제를 포함하는 CMP 슬러리 조성물에 있어서, 상기 첨가제로 음이온성 계면활성제를 전체 CMP 슬러리 조성물에 대하여 10 ~ 400ppm으로 사용하는 것을 특징으로 하는 구리 배선 연마용 CMP 슬러리 조성물을 제공한다.The present invention provides a CMP slurry composition comprising ultrapure water, an abrasive, an oxidizing agent, a corrosion inhibitor, an organic acid, and an additive, wherein the additive uses an anionic surfactant at 10 to 400 ppm with respect to the entire CMP slurry composition. It provides a CMP slurry composition for wire polishing.
상기 음이온성 계면활성제는 수용액 중에서 해리하여 음이온 부분이 계면활성을 나타내는 활성제로서, 웨이퍼 표면에 흡착하여 표면 장력을 낮추어 연마 속도를 향상시키고, 연마 균일도를 향상시키는 역할을 한다. 상기 음이온성 계면활성제로는 술폰산염, 황산에스테르염, 인산에스테르염, 및 카르복시산염으로 이루어진 그룹에서 선택되는 1종 이상을 사용하는 것이 바람직하다. 이들은 단독 또는 2종 이상 함께 사용될 수 있다. The anionic surfactant is an activator that dissociates in an aqueous solution, and the anion portion exhibits surface activity. The anionic surfactant is adsorbed on the wafer surface to lower the surface tension, thereby improving the polishing rate and improving the polishing uniformity. It is preferable to use at least one selected from the group consisting of sulfonate, sulfate ester salt, phosphate ester salt, and carboxylate as the anionic surfactant. These may be used alone or in combination of two or more.
상기 음이온성 계면활성제는 연마 속도, 연마 균일도, 연마 시 마찰과 소음, CMP 슬러리 조성물의 분산 안정성 측면에서 상기 범위로 사용되는 것이 바람직하고, 50 ~ 350ppm으로 사용되는 것이 보다 바람직하며, 100 ~ 300ppm으로 사용되는 것이 가장 바람직하다.The anionic surfactant is preferably used in the above range in terms of polishing rate, polishing uniformity, friction and noise during polishing, dispersion stability of the CMP slurry composition, more preferably used in 50 ~ 350ppm, more preferably 100 ~ 300ppm Most preferably used.
상기 연마제로는 실리카(SiO2), 알루미나(Al2O3), 세리아(CeO2), 지르코니아(ZrO2), 티타니아(TiO2), 및 산화몰리브덴(MoO3) 등의 미분의 금속 산화물을 사용하는 것이 바람직하며, 그 중에서 실리카가 슬러리 조성물의 분산 안정성이 우수하고 연마 시 스크래치를 적게 발생시키므로 가장 바람직하다. 이들은 단독 또는 2종 이상 함께 사용될 수 있다. 상기 연마제는 연마 속도, 슬러리 조성물의 분산 안정성, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 25 중량%로 사용되는 것이 바람직하며, 0.05 ~ 15 중량%로 사용되는 것이 보다 바람직하며, 0.1 ~ 10 중량%로 사용되는 것이 가장 바람직하다.Examples of the abrasive include fine metal oxides such as silica (SiO 2 ), alumina (Al 2 O 3 ), ceria (CeO 2 ), zirconia (ZrO 2 ), titania (TiO 2 ), and molybdenum oxide (MoO 3 ). It is preferable to use, and among them, silica is most preferable because of excellent dispersion stability of the slurry composition and less scratching during polishing. These may be used alone or in combination of two or more. The abrasive is preferably used in an amount of 0.01 to 25% by weight, more preferably 0.05 to 15% by weight based on the total CMP slurry composition in terms of polishing rate, dispersion stability of the slurry composition, and surface properties of the polished product. Most preferably used at 0.1 to 10% by weight.
상기 산화제는 구리 표면을 산화시켜 구리 산화물로 변환시키는 작용을 하여, 이후 기계적인 연마가 수월하도록 돕는 역할을 한다. 상기 산화제로는 무기 또 는 유기 과화합물(per-compounds), 브롬산 또는 그 염, 질산 또는 그 염, 염소산 또는 그 염, 크롬산 또는 그 염, 요오드산 또는 그 염, 철 또는 그 염, 구리 또는 그 염, 희토류 금속 산화물, 전이 금속 산화물, 적혈염, 및 중크롬산 칼륨 등을 사용하는 것이 바람직하며, 산화력과 슬러리의 분산 안정성 측면에서 과산화수소를 사용하는 것이 가장 바람직하다. 이들은 단독 또는 2종 이상 함께 사용될 수 있다. 상기 산화제는 연마 속도, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.1 ~ 30 중량%로 사용되는 것이 바람직하며, 0.5 ~ 20 중량%로 사용되는 것이 보다 바람직하며, 1 ~ 10 중량%로 사용되는 것이 가장 바람직하다.The oxidant acts to oxidize the copper surface and convert it to copper oxide, thereby helping to facilitate mechanical polishing afterwards. The oxidizing agent may be inorganic or organic per-compounds, bromic acid or salts thereof, nitric acid or salts thereof, chloric acid or salts thereof, chromic acid or salts thereof, iodic acid or salts thereof, iron or salts thereof, copper or Its salts, rare earth metal oxides, transition metal oxides, red blood salts, potassium dichromate and the like are preferably used, and hydrogen peroxide is most preferred in view of oxidizing power and dispersion stability of the slurry. These may be used alone or in combination of two or more. The oxidizing agent is preferably used in an amount of 0.1 to 30% by weight, more preferably 0.5 to 20% by weight, and more preferably 1 to 10% by weight based on the total CMP slurry composition in terms of polishing rate and surface properties of the abrasive. Most preferably used.
상기 부식 억제제는 산화제의 화학적 반응을 지연시켜 물리적 연마가 일어나지 않는 낮은 단차 영역에서의 부식을 억제하는 동시에 연마가 일어나는 높은 단차 영역에서는 연마제의 물리적 작용에 의해 제거됨으로써 연마가 가능하게 하는 연마 조절제의 역할을 한다. 상기 부식 억제제로는 질소를 함유하는 화합물을 사용하는 것이 바람직하며, 암모니아, 알킬아민류, 아미노산류, 이민류, 및 아졸류 등을 사용하는 것이 보다 바람직하며 이들은 단독 또는 2종 이상 함께 사용될 수 있다. 상기 부식 억제제 중에서 특히 환형 질소 화합물(cyclic nitrogen compound) 및 그 유도체를 포함하는 화합물을 사용하는 것이 바람직하고, 벤조트리아졸 및 그 유도체를 포함하는 화합물을 사용하는 것이 보다 바람직하며, 2,2'-[[5-메틸-1H-벤조트리아졸-1-일]메틸]이미노]비스-에탄올(2,2'-[[(5-methyl-1H-benzotriazole-1-yl)-methyl]imino]bis-ethanol)의 이성질체 혼합물(isomeric mixture)을 사용하는 것이 가장 바람직하다. 상기 부식 억제제는 부식 억제 효과, 연마 속도, 슬러리 조성물의 분산 안정성, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.001 ~ 3 중량%로 사용되는 것이 바람직하며, 0.005 ~ 2 중량%로 사용되는 것이 보다 바람직하며, 0.01 ~ 1 중량%로 사용되는 것이 가장 바람직하다.The corrosion inhibitor serves to delay the chemical reaction of the oxidizing agent to suppress corrosion in the low stepped area where physical polishing does not occur and at the same time remove the high level step where polishing occurs by the physical action of the abrasive to enable polishing. Do it. It is preferable to use a compound containing nitrogen as the corrosion inhibitor, and more preferably, ammonia, alkylamines, amino acids, imines, azoles and the like can be used alone or in combination of two or more. It is preferable to use the compound containing a cyclic nitrogen compound and its derivative (s) among the said corrosion inhibitor, and it is more preferable to use the compound containing benzotriazole and its derivative (s), and 2,2'- [[5-methyl-1H-benzotriazol-1-yl] methyl] imino] bis-ethanol (2,2 '-[[(5-methyl-1H-benzotriazole-1-yl) -methyl] imino] Most preferably, an isomeric mixture of bis-ethanol is used. The corrosion inhibitor is preferably used in an amount of 0.001 to 3% by weight based on the total CMP slurry composition in terms of corrosion inhibitory effect, polishing rate, dispersion stability of the slurry composition, and surface properties of the polished material, and is used at 0.005 to 2% by weight. It is more preferable, and it is most preferable to use 0.01 to 1 weight%.
상기 유기산은 산화제에 의해 산화된 구리 산화물을 킬레이트하는 물질로서 산화된 구리 산화물의 피연마물에의 재흡착을 방지함으로써 구리에 대한 연마 속도를 증가시키고 표면 결함(defect)을 감소시키는 역할을 한다. 상기 유기산으로는 카르보닐 화합물 및 그 염, 카르복시산 화합물 및 그 염(하나 이상의 수산화기를 함유하는 카르복시산 화합물 및 그 염, 디카르복시산 및 그 염, 트리카르복시산 및 그 염, 폴리카르복시산 및 그 염, 하나 이상의 술폰산기 및/또는 (아)인산기를 함유하는 카르복시산 화합물 및 그 염 등), 알콜류(디알콜, 트리알콜, 폴리알콜 등), 아민 함유 화합물 등을 사용할 수 있으며 이들은 단독 또는 2종 이상 함께 사용될 수 있다. 그 중 카르복시산 화합물 및 그 염을 사용하는 것이 바람직하며, 말산(malic acid), 말론산(malonic acid), 말레산(maleic acid) 등의 디카르복시산 및 그 염을 사용하는 것이 보다 바람직하며, 말산 등의 하나 이상의 수산화기를 함유하는 디카르복시산 및 그 염을 사용하는 것이 가장 바람직하다.The organic acid is a substance that chelates the copper oxide oxidized by the oxidizing agent, and serves to increase the polishing rate for copper and reduce surface defects by preventing re-adsorption of the oxidized copper oxide to the abrasive. The organic acid may be a carbonyl compound and salts thereof, carboxylic acid compounds and salts thereof (carboxylic acid compounds and salts thereof containing at least one hydroxyl group, dicarboxylic acids and salts thereof, tricarboxylic acids and salts thereof, polycarboxylic acids and salts thereof, one or more sulfonic acids Carboxylic acid compounds containing a group and / or (a) phosphate group and salts thereof), alcohols (dialcohol, trialcohol, polyalcohol, etc.), amine-containing compounds, and the like, and these may be used alone or in combination of two or more thereof. . Among them, it is preferable to use carboxylic acid compounds and salts thereof, more preferably dicarboxylic acids such as malic acid, malonic acid and maleic acid, and salts thereof. Most preferably, dicarboxylic acids and salts thereof containing at least one hydroxyl group are used.
상기 유기산은 연마 속도, 슬러리의 분산 안정성, 피연마물의 표면 특성 측면에서 전체 CMP 슬러리 조성물에 대하여 0.01 ~ 10 중량%로 사용되는 것이 바람직 하며, 0.05 ~ 5 중량%로 사용되는 것이 보다 바람직하며, 0.1 ~ 3 중량%로 사용되는 것이 가장 바람직하다.The organic acid is preferably used in an amount of 0.01 to 10% by weight, more preferably 0.05 to 5% by weight, based on the total CMP slurry composition in terms of polishing rate, dispersion stability of the slurry, and surface properties of the polished product. Most preferably used at 3 wt%.
이외에, 본 발명의 CMP 슬러리 조성물은 당 업계에서 통상적으로 사용하는 pH 조절제 등의 첨가제를 추가하는 것도 가능하다.In addition, the CMP slurry composition of the present invention may add an additive such as a pH adjuster commonly used in the art.
본 발명의 CMP 슬러리 조성물은 구리 배선을 연마하는 데에 특히 효과적이며 구리 배선을 포함하는 반도체 소자 제조에 유용하다.The CMP slurry composition of the present invention is particularly effective for polishing copper wirings and is useful for manufacturing semiconductor devices including copper wirings.
다음에 본 발명을 실시예에 의거 더욱 상세히 설명하나, 실시예에 의하여 본 발명이 한정되는 것은 아니다.Next, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by Examples.
[실시예 1]Example 1
연마제(ST-O, Nissan) 10g, 말산 5g, 부식 억제제인 IR42 5g, 음이온성 계면활성제인 DOS-70((주)아이씨켐, 화학식: C20H37NaO7S) 0.1g, 탈이온수 949.9g을 혼합시켰다. 상기 조성물에 과산화수소 30g을 연마 직전에 혼합한 후 1분간 교반한 이후에 아래와 같은 조건에서 연마 평가를 진행하였으며, 연마에 의해 제거된 웨이퍼의 두께 변화로 연마 속도를 측정하였고, 옵티프로브(Optiprobe) 장비를 사용하여 3mm 에지를 제외한 98포인트 분석으로 웨이퍼 연마균일도(With in Wafer Non Uniformity, WIWNU)를 평가하였다. 결과를 표 1에 나타내었다.10 g of an abrasive (ST-O, Nissan), 5 g of malic acid, 5 g of IR42 as a corrosion inhibitor, 0.1 g of DOS-70 (IC Chem, C20H37NaO7S) as an anionic surfactant, and 949.9 g of deionized water were mixed. After mixing 30 g of hydrogen peroxide in the composition just before polishing and stirring for 1 minute, the polishing was evaluated under the following conditions, and the polishing rate was measured by changing the thickness of the wafer removed by polishing. Was evaluated using a 98-point analysis excluding 3mm edge (With in Wafer Non Uniformity, WIWNU). The results are shown in Table 1.
※ IR42: Ciba Chemical, 제품명 Irgamet42, 70% 2,2'-[[(5-methyl-1H-benzotriazole-1-yl)-methyl]imino]bis-ethanol의 이성질체 혼합물(isomeric mixture)※ IR42: Ciba Chemical, product name Irgamet42, isomeric mixture of 70% 2,2 '-[[(5-methyl-1H-benzotriazole-1-yl) -methyl] imino] bis-ethanol
o 연마기 Model: Mirra (AMAT社)o Grinder Model: Mirra (AMAT)
o 공정조건:o Process conditions:
- 연마 패드: IC1000/SubaⅣ Stacked(Rodel社)Polishing pads: IC1000 / SubaIV Stacked (Rodel)
- Platen/Head 속도: 93/87rpmPlaten / Head speed: 93 / 87rpm
- 압력: 3psi(Bulk), 1psi(S/L)Pressure: 3 psi (Bulk), 1 psi (S / L)
- 슬러리 유량: 88㎖/분Slurry flow rate: 88 ml / min
- 온도: 25℃Temperature: 25 ℃
o 연마대상: 8인치 구리, PE-TEOS 블랭킷(blanket) 웨이퍼, 8인치 구리 패턴(pattern) 웨이퍼(854CMP200, ATDF)o Polishing target: 8 inch copper, PE-TEOS blanket wafer, 8 inch copper pattern wafer (854CMP200, ATDF)
[실시예 2][Example 2]
DOS-70을 0.3g, 탈이온수를 949.7g 사용한 것을 제외하고는 실시예 1과 동일하게 평가를 진행하였으며, 평가 결과를 표 1에 나타내었다.The evaluation was conducted in the same manner as in Example 1 except that 0.3 g of DOS-70 and 949.7 g of deionized water were used, and the evaluation results are shown in Table 1.
[비교예 1]Comparative Example 1
DOS-70을 사용하지 않은 것을 제외하고는 실시예 1과 동일하게 평가를 진행 하였으며, 평가 결과를 표 1에 나타내었다.The evaluation was conducted in the same manner as in Example 1 except that DOS-70 was not used, and the evaluation results are shown in Table 1.
[비교예 2]Comparative Example 2
DOS-70을 0.5g, 탈이온수를 949.5g 사용한 것을 제외하고는 실시예 1과 동일하게 평가를 진행하였으며, 평가 결과를 표 1에 나타내었다.The evaluation was conducted in the same manner as in Example 1 except that 0.5 g of DOS-70 and 949.5 g of deionized water were used, and the evaluation results are shown in Table 1.
[비교예 3]Comparative Example 3
DOS-70 대신에 비이온성 계면활성제인 LM5(Croda inc., 화학식: Laurylamine-(EO)5)를 동일 함량으로 사용한 것을 제외하고는 실시예 1과 동일하게 평가를 진행하였으며, 평가 결과를 표 1에 나타내었다.Evaluation was conducted in the same manner as in Example 1, except that LM5 (Croda inc., Formula: Laurylamine- (EO) 5), a nonionic surfactant, was used instead of DOS-70 in the same amount. Shown in
＊ 비교예 2는 연마 시 마찰과 소음이 너무 커 평가를 중간에 중단하였음.＊ In Comparative Example 2, the evaluation was interrupted due to too much friction and noise during polishing.
상기 결과로부터 본 발명의 CMP 슬러리 조성물은 구리 배선에 대하여 우수한 연마 속도를 나타낼 뿐만 아니라, 연마 균일도가 우수하고, 슬러리 조성물의 분산 안정성이 우수함을 확인할 수 있었다.From the above results, it was confirmed that the CMP slurry composition of the present invention not only showed an excellent polishing rate with respect to the copper wiring, but also had excellent polishing uniformity and excellent dispersion stability of the slurry composition.
Claims (8)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080135723A KR101266539B1 (en) | 2008-12-29 | 2008-12-29 | CMP slurry composition for polishing copper wiring and polishing method using the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080135723A KR101266539B1 (en) | 2008-12-29 | 2008-12-29 | CMP slurry composition for polishing copper wiring and polishing method using the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20100077701A true KR20100077701A (en) | 2010-07-08 |
| KR101266539B1 KR101266539B1 (en) | 2013-05-23 |
Family
ID=42639022
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020080135723A KR101266539B1 (en) | 2008-12-29 | 2008-12-29 | CMP slurry composition for polishing copper wiring and polishing method using the same |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101266539B1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160207A (en) * | 2011-12-16 | 2013-06-19 | 安集微电子（上海）有限公司 | Metal chemico-mechanical polishing sizing agent and application thereof |
| WO2014089905A1 (en) * | 2012-12-10 | 2014-06-19 | 安集微电子（上海）有限公司 | Metal chemical mechanical polishing slurry and application thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3768401B2 (en) | 2000-11-24 | 2006-04-19 | Ｎｅｃエレクトロニクス株式会社 | Chemical mechanical polishing slurry |
-
2008
- 2008-12-29 KR KR1020080135723A patent/KR101266539B1/en active IP Right Grant
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103160207A (en) * | 2011-12-16 | 2013-06-19 | 安集微电子（上海）有限公司 | Metal chemico-mechanical polishing sizing agent and application thereof |
| WO2014089905A1 (en) * | 2012-12-10 | 2014-06-19 | 安集微电子（上海）有限公司 | Metal chemical mechanical polishing slurry and application thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101266539B1 (en) | 2013-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP2035523B1 (en) | Compositions and methods for polishing silicon nitride materials | |
| US7435162B2 (en) | Polishing fluids and methods for CMP | |
| KR101477360B1 (en) | Cmp compositions and methods for suppressing polysilicon removal rates | |
| KR20050046620A (en) | Composition and methods for polishing copper | |
| KR101266537B1 (en) | Chemical mechanical polishing slurry compositions for polishing metal wirings | |
| KR101266539B1 (en) | CMP slurry composition for polishing copper wiring and polishing method using the same | |
| KR101279966B1 (en) | CMP slurry composition for polishing metal wiring and polishing method using the same | |
| WO2008137053A1 (en) | Cmp compositions containing a soluble peroxometalate complex and methods of use thereof | |
| US20140197356A1 (en) | Cmp compositions and methods for suppressing polysilicon removal rates | |
| KR101178719B1 (en) | CMP slurry composition for polishing copper wiring and polishing method using the same | |
| KR101279965B1 (en) | CMP slurry composition for polishing copper wiring and polishing method using the same | |
| KR101526006B1 (en) | Cmp slurry composition for copper and polishing method using the same | |
| KR100970094B1 (en) | CMP slurry composition for polishing copper line and polishing method using the same | |
| KR101279964B1 (en) | CMP slurry composition for polishing copper wiring and polishing method using the same | |
| KR101266538B1 (en) | CMP slurry composition for polishing copper wiring and polishing method using the same | |
| KR101340550B1 (en) | CMP composition and CMP method by using the same | |
| KR101976898B1 (en) | Cmp slurry composition for metal film and polishing method using the same | |
| KR20070029331A (en) | Chemical mechanical polishing composition for metal circuit | |
| KR100738842B1 (en) | Polishing composition and polishing method employing it | |
| KR20070054348A (en) | Chemical mechanical polishing composition for metal circuit | |
| KR20100080095A (en) | Cmp slurry composition for polishing metal wiring | |
| KR20070075079A (en) | Slurry composition for chemical mechanical polishing |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20160426 Year of fee payment: 4 |
|
| FPAY | Annual fee payment |
Payment date: 20170424 Year of fee payment: 5 |
|
| FPAY | Annual fee payment |
Payment date: 20180503 Year of fee payment: 6 |
|
| FPAY | Annual fee payment |
Payment date: 20190502 Year of fee payment: 7 |