KR20100070984A - Method and apparatus for manufacturing semiconductor device - Google Patents

Abstract

PURPOSE: A manufacturing method and a manufacturing device thereof are provided to improve the uniformity of a thin film deposition process by minimizing the contact area between a preheated substrate and a susceptor. CONSTITUTION: A substrate is loaded in a preheated chamber(S100). The temperature of the substrate is preheated in order to have higher temperature than the temperature of a preset thin film deposition process(S110). The preheated substrate is settled in the susceptor of a processing chamber(S120). The thin film deposition process using a chemistry deposition method is executed in the processing chamber(S130). The substrate in which the thin film is formed is unloaded to the outside in the processing chamber(S140). In a surface processing chamber, a thin film surface processing process is executed(S150).

Description

TECHNICAL AND MANUFACTURING SEMICONDUCTOR DEVICE

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and a manufacturing apparatus for a semiconductor device, and more particularly, to a method and a manufacturing apparatus for a semiconductor device capable of extending a cleaning cycle of a process chamber.

In general, a semiconductor device, a solar cell, a liquid crystal display, a light emitting display, and the like are manufactured through a semiconductor manufacturing process including a thin film process, a photo process, an etching process, a diffusion process, and the like.

In general, the thin film process may use a physical vapor deposition method or a chemical vapor deposition method, but recently, such as step coverage, uniformity, and mass productivity of the thin film, Chemical vapor deposition having excellent deposition characteristics is mainly used.

In addition, chemical vapor deposition is a process for depositing a predetermined thin film through a chemical reaction on a substrate (or wafer) by introducing a raw material into the process chamber in a gaseous state, such as LPCVD (Low Pressure Chemical Vapor Deposition) and APCVD (Atmospheric Pressure). Chemical Vapor Deposition), Low Temperature Chemical Vapor Deposition (LTCVD), Plasma Enhanced Chemical Vapor Deposition (PECVD), Metal Organic Chemical Vapor Deposition (MOCVD), and the like. For example, MOCVD is a process of forming a metal thin film on a substrate using a pyrolysis reaction.

In the process chamber for performing the thin film deposition process using the chemical vapor deposition method, a susceptor for supporting the substrate is provided, and a heater for heating the substrate is embedded in the susceptor to promote the thin film deposition process. In this case, the heater heats the susceptor to have a temperature higher than the temperature of the substrate in order to heat the temperature of the substrate to the process temperature.

In the process chamber configured as described above, the susceptor is heated through a heater, the substrate is heated to a desired process temperature through the temperature of the susceptor, and a thin film of a desired material is formed on the substrate by performing a corresponding thin film deposition process. .

When the thin film deposition process using the conventional chemical vapor deposition method is performed, powder or the like in which the thin film material or the process gas deposited on the substrate is thermally decomposed by the temperature of the susceptor is produced, and the produced powder is other than the substrate. The deposition on the inner wall of the process chamber, the upper surface and / or the side surface of the susceptor except for the portion where the substrate is supported occurs.

Due to this phenomenon, the interior of the process chamber should be periodically cleaned. Recently, a dry cleaning method using a cleaning gas has been widely used. However, the dry cleaning method alone cannot completely clean the inside of the process chamber, and thus, the process chamber must be periodically disassembled and a wet cleaning method performed by an operator using a cleaning solution is required.

However, when cleaning the inside of the process chamber through the wet cleaning method, not only should the device be down, but also after the cleaning, the pumping removes water vapor and impurities generated during the cleaning process. However, the process of setting a stable process pressure and process temperature should be carried out. Furthermore, since the actual deposition process is performed on the dummy substrate, the process of checking the uniformity of the thin film or the degree of contamination of the particles is required, which results in a lot of time and consequently a decrease in productivity. Therefore, there is a need for a method capable of extending the period of the wet cleaning longer.

SUMMARY OF THE INVENTION The present invention has been made in view of the above-described problems, and a technical object of the present invention is to provide a method and a manufacturing apparatus for a semiconductor device capable of extending a cleaning cycle of a process chamber.

Another object of the present invention is to provide a method and apparatus for manufacturing a semiconductor device which can extend the cleaning cycle of the process chamber and improve the interfacial properties of the thin film formed on the substrate.

According to an aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device, the method including: preheating a substrate; Conveying the preheated substrate to a process chamber; And forming the thin film on the preheated substrate, wherein the preheated substrate is preheated to a temperature higher than a process temperature at the time of forming the thin film performed in the process chamber.

The interior of the process chamber is maintained at a temperature lower than the temperature of the preheated substrate.

According to an aspect of the present disclosure, there is provided a method of manufacturing a semiconductor device, the method including: preheating a substrate; Conveying the preheated substrate to a process chamber; And forming the thin film on the preheated substrate, wherein the inside of the process chamber is maintained at a temperature lower than the temperature of the preheated substrate.

The process chamber is characterized in that to form the thin film on the preheated substrate using chemical vapor deposition.

In the method of manufacturing the semiconductor device, when the process of forming the thin film in the process chamber is completed, the surface of the thin film formed on the substrate through a plasma process or an annealing process in a surface treatment chamber to improve the interface characteristics of the thin film formed on the substrate. It further comprises the step of performing a process.

The thin film is formed of zinc oxide (ZnO), and the thin film surface treatment process is performed using argon (Ar) or hydrogen (H ₂ ).

The semiconductor device manufacturing apparatus according to an embodiment of the present invention for achieving the above technical problem is a preheating chamber for preheating the substrate; A substrate transfer unit for transferring the preheated substrate to a process chamber; And a process chamber for forming the thin film on the preheated substrate, wherein the preheating chamber preheats the substrate to have a temperature higher than a process temperature at the time of forming the thin film performed in the process chamber.

The interior of the process chamber is maintained at a temperature lower than the temperature of the preheated substrate.

In the step of conveying the preheated substrate to the process chamber, the preheated substrate is seated on the upper surface of the susceptor installed in the process chamber, or spaced apart from the upper surface of the susceptor by a predetermined height by a substrate support installed in the susceptor It is characterized by being seated as possible.

The semiconductor device manufacturing apparatus according to an embodiment of the present invention for achieving the above technical problem is a preheating chamber for preheating the substrate; A substrate transfer unit for transferring the preheated substrate to a process chamber; And a process chamber for forming the thin film on the preheated substrate, wherein the inside of the process chamber is maintained at a temperature lower than the temperature of the preheated substrate.

The process chamber is characterized in that it comprises a susceptor for supporting the preheated substrate.

The process chamber includes a susceptor; And a substrate support part installed at the susceptor to have a predetermined height to support the preheated substrate.

The substrate support may include: a first substrate support member installed along an edge of the susceptor to support an edge region of the preheated substrate; And at least one second substrate support member installed in the central region of the susceptor to support the central region of the preheated substrate.

The first and second substrate support members may be made of any one material of a heat resistant plastic, a heat resistant polymer, quartz, and a metal.

The first substrate support member is divided into a plurality of sub support members to have a predetermined length, and the coupling parts of adjacent sub support members have cross-sections having a staggered structure.

The first substrate support member may include a stepped surface supporting a rear surface and a side surface of the preheated substrate.

The process chamber is characterized in that to form the thin film on the preheated substrate using chemical vapor deposition.

A heat insulating member is installed inside the chamber wall of the process chamber to maintain a constant internal temperature of the process chamber.

The apparatus for manufacturing a semiconductor device may further include a surface treatment chamber configured to perform surface treatment of the thin film formed on the substrate through a plasma process or an annealing process to improve the interface characteristics of the thin film formed on the substrate. .

The thin film is formed of zinc oxide (ZnO) and the thin film surface treatment chamber is characterized in that the plasma process or annealing process is performed using argon (Ar) or hydrogen (H ₂ ).

As described above, the present invention has the following effects.

First, the substrate is preheated to have a temperature higher than the process temperature of the process chamber, and then a thin film deposition process is performed on the preheated substrate in the process chamber maintained at a temperature lower than the temperature of the preheated substrate. By minimizing contamination, the cleaning cycle of the process chamber can be extended.

Second, there is an effect that it is possible to improve the productivity by extending the process chamber long.

Third, by supporting the preheated substrate so as to be spaced apart from the susceptor by a predetermined height using the substrate support, the contact area between the preheated substrate and the susceptor is minimized to delay the cooling rate of the preheated substrate to the maximum, thereby improving the uniformity of the thin film deposition process. There is an effect that can be improved. In this case, when the susceptor is heated to a temperature lower than the process temperature, the cooling rate of the preheated substrate may be further delayed.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a flowchart illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

A method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention will be described with reference to FIG. 1 as follows.

First, the substrate is loaded into the preheating chamber (S100). Here, the substrate may be a glass substrate for manufacturing a flat panel display or a solar cell, or a semiconductor wafer for manufacturing a semiconductor device.

Next, the substrate loaded in the preheating chamber is preheated to have a temperature higher than the temperature of the set thin film deposition process (S110). Here, the preheating temperature of the substrate may be set in consideration of cooling margins such as conveyance of the substrate, process time in the process chamber, process temperature, and the like. For example, when the process temperature is 100 ~ 400 ℃, the preheating temperature of the substrate may be 20% or more higher than the process temperature.

Next, the preheated substrate is transferred to the process chamber and seated on the susceptor of the process chamber (S120). Here, the internal temperature of the process chamber may be set in a range from a temperature lower than the temperature of the preheated substrate to room temperature.

Meanwhile, the preheated substrate may be seated on an upper surface of the susceptor or supported by a substrate support installed in the susceptor and spaced apart from the upper surface of the susceptor to have a predetermined height.

Next, when the preheated substrate is seated on the susceptor of the process chamber, a desired thin film is deposited on the preheated substrate by performing a thin film deposition process using chemical vapor deposition in the process chamber (S130). In the process chamber, the thin film deposition process is performed while the preheated substrate is gradually cooled. In this case, the preheated substrate may be gradually cooled to a range of 100 to 400 ° C. by the internal temperature of the process chamber, so that a desired thin film may be deposited on the substrate without heating the substrate through a separate heating device during the thin film deposition process. Here, the thin film deposition process may be a process of forming a thin film of ZnO material on the preheated substrate, but is not limited thereto and is a method of manufacturing a semiconductor device, a solar cell, a liquid crystal display, and a light emitting display on a substrate. It can be a process to form a thin film.

Next, when the above-described thin film deposition process is completed, the substrate on which the thin film is formed is unloaded from the process chamber to the outside (S140).

On the other hand, the method of manufacturing a semiconductor device according to an embodiment of the present invention may further perform a thin film surface treatment process for improving the interface characteristics of the thin film formed on the substrate (S150).

The thin film surface treatment process loads the substrate unloaded from the process chamber into the surface treatment process chamber, and then deposits the thin film deposited on the substrate through a plasma process or annealing process using argon (Ar) gas or hydrogen (H ₂ ) gas. By performing the surface treatment, the Rms value and electron mobility of the thin film deposited on the substrate are improved. In this case, particles or thin films unnecessarily deposited in the process chamber except for the substrate during the above thin film deposition process may be removed by the above-described thin film surface treatment process. On the other hand, the above-described thin film surface treatment process may be optionally omitted.

For example, as shown in FIG. 2A, after a thin film of zinc oxide (ZnO) is formed on a substrate through a thin film deposition process, the above-described thin film surface treatment process may be performed. ) Thin film is formed in a structure as shown in Figure 2b can be improved interface characteristics.

Comparing the Rms values before and after the thin film surface treatment step in the AFM data of the thin film formed on the substrate, the Rms value before the thin film surface treatment step is about 51.786 nm, and the Rms value after the thin film surface treatment step is about 48.664 nm. Accordingly, it can be seen that when the above-described surface treatment process is performed, the interface property of the thin film formed on the substrate is improved, thereby improving the Rms value.

In addition, using the Hall measurement method of the thin film formed on the substrate to compare the electron mobility before and after the thin film surface treatment process, as shown in Figure 3, the electron mobility before the thin film surface treatment process is 30.47 cm 2 / V. It is about sec, and the electron mobility after a thin film surface treatment process is about 41.50 cm <2> /V.sec. Accordingly, when the above-described thin film surface treatment process is performed, it can be seen that the electron mobility of the thin film formed on the substrate is improved.

Such a method of manufacturing a semiconductor device according to an embodiment of the present invention by preheating the substrate higher than the process temperature from the outside of the process chamber, by transferring the preheated substrate to the process chamber to perform a thin film deposition process on the preheated substrate By minimizing contamination in the process chamber, the cleaning cycle of the process chamber using the dry cleaning method or the wet cleaning method may be extended. For example, the deposition rate deposited in the process chamber other than the substrate during the thin film deposition process, as shown in Figure 4, the temperature of the process chamber is rapidly increased in the range of 120 ~ 250 ℃. Accordingly, the present invention can form a desired thin film on the substrate by performing a thin film deposition process on the preheated substrate without additional heating of the substrate while maintaining a constant temperature inside the chamber at a temperature of 120 ℃ or less, The deposition rate of the thin film in the process chamber can be minimized, thereby extending the cleaning cycle of the process chamber.

FIG. 5 is a diagram for describing an apparatus for manufacturing a semiconductor device according to the first embodiment of the present disclosure.

Referring to FIG. 5, the apparatus for manufacturing a semiconductor device according to the first exemplary embodiment may include a substrate transfer chamber 100 having a clustered arrangement structure; A load lock chamber 200; Preheating chamber 300; And a plurality of process chambers 400, 410, 420, 430, 440.

The substrate transfer chamber 100 conveys the substrates disposed in the central portions of the chambers to the respective chambers. To this end, the substrate transfer chamber 100 is configured to include a substrate transfer unit 110 for transferring a substrate. The load lock chamber 200 is provided around the substrate transfer chamber 100; Preheating chamber 300; And a plurality of process chambers 400, 410, 420, 430, and 440, respectively.

The load lock chamber 200 may include at least one substrate storage slot (not shown) for temporarily storing a substrate supplied from the outside; A substrate support (not shown) for preventing direct contact of the substrate with each substrate storage slot; And a door (not shown) for accessing the substrate.

The preheating chamber 300 preheats the substrate conveyed by the substrate conveying unit 110 to have a temperature higher than that of the set thin film deposition process. At this time, the preheating temperature of the substrate is conveyed from the preheating chamber 300 to the process chambers 400, 410, 420, 430, 440 by the substrate conveying unit 110, and the process chambers 400, 410, 420, 430, 440. It may be set in consideration of the cooling margin of the process time, the process temperature and the like. For example, when the process temperature is 100 to 400 ° C., the preheating chamber 300 preheats the substrate to be 20% higher than the process temperature. As such, the preheating chamber 300 may preheat the substrate to a set temperature using a heating device such as a coil heater or a lamp heater.

Meanwhile, the load lock chamber 200 and the preheating chamber 300 may have a stacked structure. That is, the load lock chamber 200 may be disposed at the lower portion, and the preheat chamber 300 may be disposed at the upper portion of the load lock chamber 200.

Each of the process chambers 400, 410, 420, 430, and 440 receives a substrate preheated in the preheating chamber 300 by the substrate transfer unit 110 and performs a thin film deposition process using chemical vapor deposition on the preheated substrate. . In the process chambers 400, 410, 420, 430, and 440, the thin film deposition process is performed while the preheated substrate is gradually cooled. At this time, since the preheated substrate is gradually cooled to a range of 100 to 400 ° C. by the internal temperature of the process chamber maintained at a constant temperature, a desired thin film is deposited on the substrate even when the substrate is not heated by a separate heating device during the thin film deposition process. You can. Here, the thin film deposition process may be a process of forming a thin film of ZnO material on the preheated substrate, but is not limited thereto and is a method of manufacturing a semiconductor device, a solar cell, a liquid crystal display, and a light emitting display on a substrate. It can be a process to form a thin film.

For example, as shown in FIG. 6, when manufacturing a solar cell including a front electrode 1, a semiconductor layer 2, and a back electrode 3 on a preheated substrate S, the present invention is provided. The apparatus for manufacturing a semiconductor device according to the present invention includes a process chamber 400 for forming a front electrode 1 made of a transparent material such as ZnO on a preheated substrate S, and a P-type semiconductor layer on the front electrode 1. Process chamber 410 for forming, process chamber 420 for forming I-type semiconductor layer on P-type semiconductor layer, process chamber 430 for forming N-type semiconductor layer on I-type semiconductor layer, N It comprises a process chamber 440 for forming a back electrode on the semiconductor semiconductor layer, each process chamber 400, 410, 420, 430, 440 is arranged in a cluster form around the substrate transfer chamber 100 Can be.

Each process chamber 400, 410, 420, 430, 440 according to the first embodiment includes a chamber wall 402, as shown in FIG. 7; And a susceptor 404.

The chamber wall 402 is disposed in communication with the substrate transfer chamber 100 to provide a reaction space for performing the thin film deposition process. One side of the chamber wall 402 is provided with a door 406 through which the substrate enters and exits by the substrate transfer unit 110.

In addition, the interior of the chamber wall 402 has a heat insulating member 408 for maintaining the temperature of the reaction space at a constant temperature, so that the internal temperature of each of the process chambers 400, 410, 420, 430, 440 is a heat insulating member. It is maintained at a temperature lower than the temperature of the substrate S preheated by 408.

The susceptor 404 is lifted by a driver (not shown) to support the preheated substrate S loaded from the substrate transfer unit 110 through the door 406. At this time, the susceptor 404 may be a built-in heating device for maintaining the temperature of the susceptor 404 equal to the internal temperature of the process chamber. Here, the heating device may be a heating coil or a heating pipe. On the other hand, since the preheated substrate S is seated on the susceptor 404, the susceptor 404 may not include a separate heating device for heating the substrate S.

Each process chamber 400, 410, 420, 430, 440 according to the second embodiment includes a chamber wall 402, as shown in FIG. 8; Thermal insulation member 500; And a susceptor 404.

The chamber wall 402 is disposed in communication with the substrate transfer chamber 100 to provide a reaction space for performing the thin film deposition process. One side of the chamber wall 402 is provided with a door 406 through which the substrate enters and exits by the substrate transfer unit 110.

The thermal insulation member 500 is installed inside the chamber wall 402 so that the internal temperature of each process chamber 400, 410, 420, 430, 440 is lower than the temperature of the preheated substrate S at a temperature between room temperature. Keep it at In this case, the heat insulating member 500 may be a heating coil or a heating pipe.

The susceptor 404 is lifted by a driver (not shown) to support the preheated substrate S loaded from the substrate transfer unit 110 through the door 406. At this time, the susceptor 404 may be a built-in heating device for maintaining the temperature of the susceptor 404 equal to the internal temperature of the process chamber. Here, the heating device may be a heating coil or a heating pipe. On the other hand, since the preheated substrate S is seated on the susceptor 404, the susceptor 404 may not include a separate heating device for heating the substrate S.

Each process chamber 400, 410, 420, 430, 440 according to the third embodiment includes a chamber wall 402, as shown in FIG. 9; Thermal insulation member 500; Susceptor 404; And a substrate support 410.

The chamber wall 402 is disposed in communication with the substrate transfer chamber 100 to provide a reaction space for performing the thin film deposition process. One side of the chamber wall 402 is provided with a door 406 through which the substrate enters and exits by the substrate transfer unit 110.

The thermal insulation member 500 is installed inside the chamber wall 402 so that the internal temperature of each process chamber 400, 410, 420, 430, 440 is lower than the temperature of the preheated substrate S at a temperature between room temperature. Keep it at At this time, the heat insulating member 500 may be a heating coil or a heating pipe.

The susceptor 404 is lifted by a driving device not shown. At this time, the susceptor 404 may be a built-in heating device for maintaining the temperature of the susceptor 404 equal to the internal temperature of the process chamber. Here, the heating device may be a heating coil or a heating pipe. On the other hand, since the preheated substrate S is seated on the susceptor 404, the susceptor 404 may not include a separate heating device for heating the substrate S.

The substrate support 410 is installed in the susceptor 404 to have a predetermined height and supports the preheated substrate S loaded from the substrate transfer unit 110 through the door 406. The substrate support 410 supports the preheated substrate S so as to be spaced apart from the susceptor 404 by a predetermined height, thereby providing a gap Gap having a predetermined height between the preheated substrate S and the susceptor 404. Form. Accordingly, the substrate support 410 minimizes the heat transfer path through which the temperature of the preheated substrate S is transferred to the susceptor 404 to delay the cooling rate of the preheated substrate S to the maximum, thereby preheating the substrate S. Minimize the unevenness of the thin film deposition process due to cooling.

To this end, the substrate support 410 may include a first substrate support member 412 for supporting an edge region of the preheated substrate S; And a second substrate support member 414 for supporting a central region of the preheated substrate.

The first substrate support member 412 is formed along the edge of the susceptor 404 to have a predetermined height to support the edge region of the preheated substrate S. In this case, the first substrate supporting member 412 may be made of a material having a lower thermal conductivity than the susceptor 404. For example, the first substrate support member 412 may be made of a heat resistant plastic, a heat resistant polymer, quartz, or a metal material (eg, stainless steel, aluminum, ceramic, etc.).

As illustrated in FIG. 10, the first substrate support member 412 may be integrally formed along the edge of the susceptor 404 to have a predetermined width and height. The first substrate supporting member 412 having such a structure may have a gap between the substrate S to which the process gas supplied to each of the process chambers 400, 410, 420, 430, and 440 is preheated, and the susceptor 404. Prevents penetration into Gap).

In addition, as illustrated in FIG. 11, the first substrate support member 412 may be divided into a plurality of sub support members to have a predetermined width and height, and may be formed along the edge of the susceptor 404. At this time, the coupling portion 413 of the plurality of sub support members is formed to have a cross-section of the structure that cross each other. The first substrate support member 412 having the structure includes a gap between the substrate S and the susceptor 404 preheated with the process gas supplied into the process chambers 400, 410, 420, 430, and 440. By prolonging the penetration path penetrating into (Gap), it is possible to maximize the prevention of process gas penetration.

The second substrate supporting member 414 is formed in the central region of the susceptor 404 to have a predetermined height to support the central region of the preheated substrate S. At this time, the upper portion of the second substrate support member 414 is preferably formed in a curved shape to minimize the contact area with the preheated substrate (S). The second substrate support member 414 is made of the same material as the first substrate support member 412.

Each process chamber 400, 410, 420, 430, 440 according to the fourth embodiment includes a chamber wall 402, as shown in FIG. 12; Thermal insulation member 500; Susceptor 404; And a substrate support 410. In the process chambers 400, 410, 420, 430, and 440 according to the fourth exemplary embodiment having the above configuration, other configurations except for the first substrate supporting member 412 of the substrate supporting part 410 are described above. Since the same as the substrate support 410 of each process chamber 400, 410, 420, 430, 440 according to the description of the same configuration will be replaced by the above description.

The susceptor 404 has the same height as described above except that the first substrate support member 412 includes a stepped surface 412a for supporting the side and the rear surface of the preheated substrate S. It is formed along the edge of and supports the edge region of the preheated substrate (S).

The stepped surface 412a may automatically align the preheated substrate S seated on the first substrate support member 412. In addition, the stepped surface 412a penetrates into the gap Gap between the preheated substrate S and the susceptor 404 through the contact portion of the preheated substrate S and the first substrate support member 412. By lengthening the path, it is possible to maximize the prevention of process gas penetration.

Meanwhile, as shown in FIG. 13, the first substrate support member 412 may further include a temperature adjusting member 416.

The temperature control member 416 is formed inside the first substrate support member 412 to cool the preheated substrate S by maintaining the temperature of the first substrate support member 412 at a temperature higher than that of the susceptor 404. Delay the speed as much as possible.

Meanwhile, each of the process chambers 400, 410, 420, 430, and 440 according to the first to fourth embodiments described above may be arranged in a cluster form around the substrate transfer chamber 100 to have a stacked structure.

A semiconductor device manufacturing apparatus according to a first embodiment of the present invention is a thin film surface for improving the interfacial properties of a thin film formed on a substrate by a thin film deposition process performed in each process chamber (400, 410, 420, 430, 440) It may be configured to further include at least one surface treatment chamber (not shown) for performing the treatment process. In this case, at least one surface treatment chamber may be selected from a plurality of process chambers 400, 410, 420, 430, and 440 or may be configured separately.

In the surface treatment chamber, a plasma process or annealing process using argon (Ar) gas or hydrogen (H ₂ ) gas is performed to surface-treat the thin film deposited on the substrate, so that the Rms value and the electron mobility of the thin film deposited on the substrate. To improve.

As such, the apparatus for manufacturing a semiconductor device according to the first exemplary embodiment of the present invention provides a temperature higher than the process temperature of each process chamber 400, 410, 420, 430, and 440 in the preheating chamber 300. After preheating to have a thin film deposition process for the preheated substrate (S) in the process chamber (400, 410, 420, 430, 440) is constantly maintained at a temperature lower than the temperature of the preheated substrate (S) Contamination within each process chamber can be minimized to prolong the cleaning cycle of the process chamber.

Specifically, in the related art, since the temperature inside the process chamber is maintained at a temperature at which process gases are decomposed and deposited by heating the susceptor above the process temperature (eg, process chamber inner wall, gas injection, etc.). Means, susceptors, and the like) also require frequent cleaning of the process chamber. However, in the present invention, since the temperature inside the process chamber is kept lower than the process temperature, and the process temperature in the process chamber is the preheated substrate, the thin film deposition is performed only on the substrate, and the thin film is formed on the portion other than the substrate. Deposition is minimized. Therefore, the present invention can extend the cleaning cycle of the process chamber longer than before.

In addition, the apparatus for manufacturing a semiconductor device according to the first embodiment of the present invention supports the substrate S preheated to be spaced apart from the susceptor 404 by a predetermined height by using the substrate support 410. By minimizing the contact area between the) and the susceptor 404, the uniformity of the thin film deposition process may be improved by delaying the cooling rate to the maximum. The semiconductor device manufacturing apparatus according to the first exemplary embodiment of the present invention improves the Rms value and electron mobility of a thin film deposited on a substrate by performing a thin film surface treatment process after the thin film deposition process. Properties can be improved.

14 is a diagram for describing an apparatus for manufacturing a semiconductor device according to the second exemplary embodiment of the present invention.

Referring to FIG. 14, an apparatus for manufacturing a semiconductor device according to a second exemplary embodiment of the present inventive concept may include an in-line arrangement structure including a substrate transfer line 500; A load lock chamber 600; At least one preheating chamber 700; And a plurality of process chambers 800, 810, 820, 830, 840, 850.

The substrate conveying line 500 is disposed between the at least one preheating chamber 700 and the plurality of process chambers 800, 810, 820, 830, 840, and 850 to convey the substrate. To this end, the substrate transfer line 500 includes a substrate transfer unit 510 for substrate transfer between the chambers 600, 700, 800, 810, 820, 830, 840, and 850.

The substrate conveying unit 510 is installed to be transported in the substrate conveying line 500 to convey the substrates stored in the load lock chamber 600 to the respective chambers 700, 800, 810, 820, 830, 840, and 850. Substrate transfer between the process chambers 700, 800, 810, 820, 830, 840, and 850 is performed.

The load lock chamber 600 includes at least one substrate storage slot (not shown) for temporarily storing a substrate supplied from the outside; A substrate support (not shown) for preventing direct contact of the substrate with each substrate storage slot; And a door (not shown) for accessing the substrate.

The at least one preheating chamber 700 preheats the substrate conveyed by the substrate conveying unit 110 to have a temperature higher than that of the set thin film deposition process. At this time, the preheating temperature of the substrate is conveyed from the preheating chamber 700 to the process chambers 800, 810, 820, 830, 840, 850 by the substrate conveying unit 110, the process chambers 800, 810, 820, 830, 840 and 850 may be set in consideration of cooling margins such as process time and process temperature. For example, when the process temperature is 100 ~ 400 ℃, the preheating temperature of the substrate may be 20% or more higher than the process temperature. As such, the preheating chamber 700 may preheat the substrate to a set temperature using a heating device such as a coil heater or a lamp heater.

The plurality of process chambers 800, 810, 820, 830, 840, and 850 are arranged in two rows to face the substrate transfer line 500 therebetween. Each of the process chambers 800, 810, 820, 830, 840, and 850 receives a substrate preheated in the preheating chamber 700 by the substrate transfer unit 510 and deposits a thin film using a chemical vapor deposition method on the substrate that is preheated. Perform the process. In the process chambers 800, 810, 820, 830, 840, and 850, the thin film deposition process is performed while the preheated substrate is gradually cooled. At this time, since the preheated substrate is gradually cooled to a range of 100 to 400 ° C. by the internal temperature of the process chamber maintained at a constant temperature, a desired thin film is deposited on the substrate even when the substrate is not heated by a separate heating device during the thin film deposition process. You can. Here, the thin film deposition process may be a process of forming a thin film of ZnO material on the preheated substrate, but is not limited thereto and is a method of manufacturing a semiconductor device, a solar cell, a liquid crystal display, and a light emitting display on a substrate. It can be a process to form a thin film.

Each of the process chambers 800, 810, 820, 830, 840, and 850 may be configured in the same manner as illustrated in any one of FIGS. 4 to 12, and thus description thereof will be replaced with the above description. do.

In the above-described process chambers 800, 810, 820, 830, 840, and 850, a thin film deposition process is performed on the preheated substrate S, and then plasma using argon (Ar) gas or hydrogen (H ₂ ) gas. By performing a process or annealing process to treat the thin film deposited on the substrate to improve the Rms value and electron mobility (Mobility) of the thin film deposited on the substrate.

Meanwhile, the preheating chamber 700 may be disposed at least one in each row according to the processing time of each process chamber 800, 810, 820, 830, 840, 850.

On the other hand, as shown in Figure 6, when manufacturing a solar cell comprising a front electrode (1), a semiconductor layer (2), and a rear electrode (3) on the preheated substrate (S), According to the apparatus for manufacturing a semiconductor device, a process chamber 800 for forming a front electrode 1 made of a transparent material such as ZnO on a preheated substrate S, and a P-type semiconductor layer are formed on the front electrode 1. Process chamber 810, process chamber 820 for forming I-type semiconductor layer on P-type semiconductor layer, process chamber 830 for forming N-type semiconductor layer on I-type semiconductor layer, N-type A process chamber 840 for forming a back electrode on the semiconductor layer, each process chamber 800, 810, 820, 830, 840, 850 being adjacent to the substrate transfer chamber 100. It may be arranged in the form.

At least one apparatus for manufacturing a semiconductor device according to the second embodiment of the present invention performs a surface treatment process on a substrate on which a thin film deposition process is completed in each process chamber 800, 810, 820, 830, 840, 850. It may be configured to further include a surface treatment chamber (not shown). In this case, the at least one surface treatment chamber may be selected from a plurality of process chambers 800, 810, 820, 830, 840, and 850 or may be configured separately.

In the surface treatment chamber, a plasma process or an annealing process using argon (Ar) gas or hydrogen (H ₂ ) gas is performed to surface treat the thin film deposited on the substrate, thereby obtaining the Rms value and the electron mobility of the thin film deposited on the substrate. Improve).

As described above, in the semiconductor device manufacturing apparatus according to the second exemplary embodiment of the present invention, the substrate S in the preheating chamber 700 is higher than the process temperature of each of the process chambers 800, 810, 820, 830, 840, and 850. After preheating to have a temperature, thin film deposition on the preheated substrate S in the process chambers 800, 810, 820, 830, 840, 850 that are constantly maintained at a temperature lower than the temperature of the preheated substrate S By performing the process, contamination within each process chamber can be minimized to prolong the cleaning cycle of the process chamber.

In addition, the semiconductor device manufacturing apparatus according to the second exemplary embodiment of the present invention supports the preheated substrate S by being preheated to be spaced apart from the susceptor 404 by a predetermined height using the substrate support 410. By minimizing the contact area between the) and the susceptor 404, the uniformity of the thin film deposition process may be improved by delaying the cooling rate to the maximum. In addition, the semiconductor device manufacturing apparatus according to the second embodiment of the present invention improves the Rms value and the electron mobility of the thin film deposited on the substrate by performing the surface treatment process after the thin film deposition process, thereby interfacial characteristics of the thin film. Can improve.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1 is a flowchart illustrating a method of manufacturing a semiconductor device in accordance with an embodiment of the present invention.

2A and 2B are views for explaining a thin film formed on a substrate before and after the surface treatment process shown in FIG.

3 is a view for explaining the electron mobility of the thin film formed on the substrate before and after the surface treatment process shown in FIG.

4 is a graph illustrating the deposition rate of a thin film according to a temperature of a process chamber.

FIG. 5 is a diagram for describing an apparatus for manufacturing a semiconductor device according to the first embodiment of the present disclosure.

6 is a view for explaining a solar cell manufactured by the apparatus for manufacturing a semiconductor device shown in FIG.

7 is a view for explaining a process chamber according to a first embodiment of the present invention.

8 is a view for explaining a process chamber according to a second embodiment of the present invention.

9 is a view for explaining a process chamber according to a third embodiment of the present invention.

FIG. 10 is a diagram for describing a substrate supporter according to the first embodiment shown in FIG. 8.

FIG. 11 is a diagram for describing a substrate supporter according to the second exemplary embodiment illustrated in FIG. 8.

12 is a view for explaining a process chamber according to a fourth embodiment of the present invention.

13 is a view for explaining a process chamber according to a fifth embodiment of the present invention.

14 is a diagram for describing an apparatus for manufacturing a semiconductor device according to the second exemplary embodiment of the present invention.

<Explanation of Signs of Major Parts of Drawings>

S: preheated substrate 100: substrate transfer chamber

110: substrate transfer unit 200: load lock chamber

300: preheat chamber 400: process chamber

404: susceptor 406: door

408: heat insulating member 410: substrate support

412: first substrate support member 414: second substrate support member

Claims (20)

Preheating the substrate; Conveying the preheated substrate to a process chamber; And Forming the thin film on the preheated substrate, The preheated substrate is a method of manufacturing a semiconductor device, characterized in that the preheated to a temperature higher than the process temperature at the time of forming a thin film performed in the process chamber. The method of claim 1, The interior of the process chamber is a semiconductor device manufacturing method, characterized in that maintained at a temperature lower than the temperature of the preheated substrate. Preheating the substrate; Conveying the preheated substrate to a process chamber; And Forming the thin film on the preheated substrate, The interior of the process chamber is a semiconductor device manufacturing method, characterized in that maintained at a temperature lower than the temperature of the preheated substrate. The method according to claim 1 or 3, And the process chamber forms the thin film on the preheated substrate using chemical vapor deposition. The method according to claim 1 or 3, When the process of forming the thin film in the process chamber is completed, performing a surface treatment of the thin film formed on the substrate through a plasma process or an annealing process in a surface treatment chamber to improve the interface characteristics of the thin film formed on the substrate. A method of manufacturing a semiconductor device, comprising the. The method of claim 5, The thin film is formed of zinc oxide (ZnO) material, the method of manufacturing a semiconductor device, characterized in that the thin film surface treatment is performed using argon (Ar) or hydrogen (H ₂ ). The method according to claim 1 or 3, In the step of conveying the preheated substrate to the process chamber, the preheated substrate is seated on the upper surface of the susceptor installed in the process chamber, or spaced apart from the upper surface of the susceptor by a predetermined height by a substrate support installed in the susceptor Method for manufacturing a semiconductor device, characterized in that seated as possible. A preheating chamber for preheating the substrate; A substrate transfer unit for transferring the preheated substrate to a process chamber; And A process chamber forming the thin film on the preheated substrate, And the preheating chamber preheats the substrate to have a temperature higher than a process temperature at the time of forming a thin film to be performed in the process chamber. The method of claim 8, The interior of the process chamber is a semiconductor device manufacturing apparatus, characterized in that maintained at a temperature lower than the temperature of the preheated substrate. A preheating chamber for preheating the substrate; A substrate transfer unit for transferring the preheated substrate to a process chamber; And A process chamber forming the thin film on the preheated substrate, The interior of the process chamber is a semiconductor device manufacturing apparatus, characterized in that maintained at a temperature lower than the temperature of the preheated substrate. The method according to claim 8 or 10, And said process chamber comprises a susceptor for supporting said preheated substrate. The method according to claim 8 or 10, The process chamber, Susceptor; And And a substrate support part installed on the susceptor to have a predetermined height to support the preheated substrate. 13. The method of claim 12, The substrate support portion, A first substrate support member installed along an edge of the susceptor to support an edge region of the preheated substrate; And And at least one second substrate support member disposed in the central region of the susceptor and supporting the central region of the preheated substrate. The method of claim 13, The first and the second substrate support member is a semiconductor device manufacturing apparatus, characterized in that made of any one material of a heat resistant plastic, a heat resistant polymer, quartz, and a metal. The method of claim 13, The first substrate support member is divided into a plurality of sub support members to have a predetermined length, and the coupling portion of the adjacent sub support member has a cross-section of the cross-structure structure, characterized in that the manufacturing apparatus of the semiconductor device. The method of claim 13, The first substrate support member includes a stepped surface for supporting the back and side surfaces of the preheated substrate. The method according to claim 8 or 10, The process chamber is a device for manufacturing a semiconductor device, characterized in that for forming the thin film on the preheated substrate using a chemical vapor deposition method. The method according to claim 8 or 10, And a heat insulation member is installed inside the chamber wall of the process chamber to maintain a constant internal temperature of the process chamber. The method according to claim 8 or 10, And a surface treatment chamber for performing a surface treatment of the thin film formed on the substrate through a plasma process or an annealing process to improve the interfacial properties of the thin film formed on the substrate. The method of claim 19, The thin film is formed of zinc oxide (ZnO) material, the thin film surface treatment chamber is a semiconductor device manufacturing apparatus characterized in that performing the plasma process or annealing process using argon (Ar) or hydrogen (H ₂ ). .

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