JP2002361159A - Wet sheet treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a wet sheet treatment device free from the generation of unevenness of substrate processing. SOLUTION: This wet sheet treatment device is provided with a carrier roller 18 for carrying a substrate 1, and a shower part 3 discharging a substrate treatment liquid toward the substrate 1. The wet sheet treatment device is also provided with a treatment liquid discharge part 10, which receives the falling treatment liquid and discharges it to the outside of a treatment tank 20, and an upper opened liquid storage pan 4, which is located between the carrier roller 18 and the treatment liquid discharge part 10 and stores the treatment liquid dropping down from the substrate 1. The temperature of the substrate 1 is regulated by radiant heat emitted from the treatment liquid stored in the liquid storage pan 4.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a process such as developing a substrate such as a glass substrate for a display panel used for a liquid crystal display device or a plasma display device or a wafer used for a semiconductor device by using a chemical. The present invention relates to a wet single wafer processing apparatus.

[0002]

2. Description of the Related Art In a conventional continuous single-wafer processing apparatus, a substrate is processed by supplying a processing liquid to the substrate in a substrate processing section while transporting the substrate using a roller, a conveyor or the like. After that, it is common to supply pure water to the substrate surface to remove the remaining processing liquid and dry it. FIG. 3 is a schematic sectional view showing the structure of this type of single-wafer processing apparatus. Hereinafter, the wet single wafer processing apparatus will be described in detail.

Referring to FIG. 3, a conventional wet single-wafer processing apparatus includes a processing tank 120, a conveying roller 118 provided in the processing tank 120, which is a means for conveying the substrate 101, and a processing liquid discharging means. And a shower section 103. The shower unit 103 is located above the substrate transport path transported by the transport roller 118, and discharges the processing liquid in a curtain shape. In addition, at the bottom of the processing tank 120,
A processing liquid discharging unit 110 is formed to discharge the accumulated processing liquid, and the processing liquid discharging unit 110 further includes a drain 110a.

A substrate 101 to be processed is horizontally moved in a processing tank 120 by a transport roller 118. At a predetermined position on the substrate transport path, the shower unit 10
The processing liquid is supplied to the upper surface of the substrate 101 by 3. This processing liquid is discharged in a curtain shape to uniformly supply the processing liquid to the upper surface of the substrate 101. Thus, the substrate 10
Substrate processing is performed using the processing liquid supplied to the upper surface of the substrate 1, and then the substrate 101 is transported outside the processing tank 120 by the transport rollers 118. The excess processing liquid remaining on the upper surface of the substrate 101 drips from the upper surface of the substrate 101, is collected by the processing liquid discharge unit 110, and is collected by the drain 110a.
Is discharged to the outside of the processing tank 120.

[0005] By using the wet single-wafer processing apparatus of this configuration, the substrate can be processed while the substrate is transported by the transport roller, so that a plurality of substrates can be continuously processed in a short time.

[0006]

In the wet single wafer processing apparatus having the above-described structure, it is necessary to raise the temperature of the substrate and the processing liquid to a predetermined processing temperature in order to perform the substrate processing. Further, in order to perform uniform and uniform substrate processing, it is necessary to keep the temperature uniform and stable over the entire substrate surface to be processed. Temperature unevenness generated on the substrate surface causes processing unevenness, which causes instability of the process and lowers the yield. In order to avoid this, it is necessary to increase the margin of the processing time and perform processing up to the stable region, and as a result, the processing capacity is reduced.

As a method for raising the temperature of a substrate to a processing temperature and maintaining a uniform temperature on a substrate surface to be processed,
(A) a method in which a processing temperature is obtained by preliminarily heating a processing liquid and exchanging heat between the substrate and the processing liquid when the processing liquid comes into contact with a substrate surface; and (b) a hot plate separately in a processing tank. ,
By providing substrate heating means such as lamps and heaters,
A method of raising the temperature of the substrate is considered.

However, in the method (a), although the substrate is heated to the processing temperature at and near the position where the processing liquid is supplied and in direct contact, the processing temperature hardly reaches the processing temperature at other positions. It is difficult to completely suppress temperature unevenness. For this reason, it is necessary to raise the temperature of the processing liquid to a predetermined processing temperature or higher, and to discharge a large amount of the processing liquid to the substrate, which requires extra energy and heat-resistant structure for processing the substrate.

In the method (b), the temperature of the substrate can be increased, but it is structurally difficult to maintain a uniform temperature on the surface of the substrate to be processed. In addition, it is necessary to attach a separate unit for raising the temperature of the substrate to the wet single wafer processing apparatus, resulting in an increase in manufacturing cost.

[0010] Therefore, an object of the present invention is to increase the temperature of a substrate to a temperature equivalent to that of a previously heated processing solution with a relatively simple structure and to stabilize the temperature distribution on the substrate surface to be processed uniformly and stably. To prevent the occurrence of processing unevenness.

[0011]

A wet single wafer processing apparatus according to the present invention comprises a holding means for holding a substrate, and a processing liquid discharging means for discharging a processing liquid toward the substrate. A processing solution discharge unit that receives and discharges the processed processing solution, and a processing liquid storage tank that is located between the holding unit and the processing liquid discharge unit and that has an upper surface opening for storing the processing solution that drips from the substrate. Item 1).

According to this structure, a processing liquid storage tank for temporarily storing excess processing liquid dripping from the substrate is provided between the holding means and the processing liquid discharge section, so that the processing liquid is stored in the processing liquid storage tank. The radiant heat generated from the processing liquid is transferred to the substrate, and the substrate temperature can be uniformly and stably adjusted to the processing temperature. As a result, the occurrence of uneven temperature on the substrate surface, which is a cause of uneven processing, is prevented. In order to transfer radiant heat to the substrate more efficiently, it is desirable to set the distance between the processing liquid storage tank and the lower surface of the substrate to be short, and to maintain the liquid temperature in the processing liquid storage tank near the processing temperature. In order to achieve this, it is effective to reduce the depth of the treatment liquid storage layer.

It is preferable that the wet single wafer processing apparatus of the present invention includes, for example, a cover located above the substrate and keeping the substrate warm.

According to this configuration, by providing the cover above the substrate held by the holding means, it becomes possible to confine the heat emitted from the substrate, and a heat retaining effect can be obtained. By combining with the above-mentioned processing liquid storage tank, radiant heat released from the processing liquid in the processing liquid storage tank can be confined around the substrate, and further effects can be obtained.

In the wet single wafer processing apparatus according to the present invention, for example, the holding means may include a transfer means for transferring a plurality of substrates continuously, and the plurality of substrates may be continuously processed by the processing liquid discharge means. Desirable (claim 3).

According to this configuration, the present invention can be applied to a continuous wet single-wafer processing apparatus. Therefore, it is possible to prevent processing unevenness while maintaining high production efficiency.

In the wet single wafer processing apparatus of the present invention, for example, the processing liquid storage tank preferably includes a heat insulating member.

According to this configuration, since the processing liquid storage layer includes the heat insulating member, the processing liquid in the processing liquid storage tank can be stored at a temperature closer to the processing temperature. By transmitting the radiant heat to the substrate, the processing unevenness can be further reduced.

In the wet single wafer processing apparatus of the present invention, for example, it is desirable that the cover is provided with a heat insulating member.

According to this configuration, since the above-mentioned cover includes the heat insulating member, higher heat retaining performance is realized. As a result, the occurrence of temperature unevenness on the surface of the substrate to be processed is prevented, and processing unevenness is less likely to occur.

[0021]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments and examples of the present invention will be described with reference to the drawings.

(Embodiment) FIG. 1 is a schematic sectional view showing a structure of a wet single wafer processing apparatus according to an embodiment. First, the structure of the wet single wafer processing apparatus will be described. With reference to FIG. 1, the wet single wafer processing apparatus includes a processing tank 20 for processing the substrate 1 therein.
In the processing tank 20, substrates 1 provided at appropriate intervals are provided.
Are arranged horizontally in order to constitute a substrate transfer path in the processing tank 20.

At a predetermined position above the transport path, a shower section 3 as a processing liquid discharging means is provided. The processing liquid is continuously discharged from the shower unit 3 during operation of the wet single wafer processing apparatus. Also, this shower part 3
A cover 5 is provided so as to surround the upper side and the side. At a predetermined position below the transport path, a liquid storage pan 4 which is a processing liquid storage tank having a structure for storing the processing liquid therein is provided. Both the reservoir pan 4 and the cover 5 have a heat insulating structure. The heat insulating structure includes, for example, a vacuum double structure made of stainless steel or glass.

At the bottom of the processing tank 20, there is provided a processing liquid discharge section 10 for receiving the processing liquid falling from the liquid storage pan 4. The processing liquid discharge unit 10 includes a drain 10 a that discharges the received processing liquid to the outside of the processing tank 20.

Next, the operation of the wet single wafer processing apparatus will be described. As described above, the processing liquid heated to the processing temperature in advance is discharged downward continuously from the shower unit 3 in a shower shape. The substrate 1 transported on the transport path by the transport roller 18 passes through a shower curtain of the processing liquid when passing under the shower unit 3. At this time, the processing liquid adheres to the upper surface of the substrate 1 and spreads, thereby processing the substrate 1. At this time, since heat exchange is performed between the substrate 1 and the processing liquid, the temperature of the substrate 1 is raised to reach a predetermined processing temperature. In addition, the processing liquid excessively supplied to the surface of the substrate 1 drips from the peripheral portion of the substrate 1 and is received by the lower liquid storage pan 4.

The processing liquid dripping into the liquid storage pan 4
The dripping into the sump pan 4 while maintaining a temperature close to the processing temperature, and furthermore, since the sump pan 4 has a heat insulating structure, the processing liquid stored in the sump pan 4 also reaches the processing temperature. Maintain close temperature. This sump bread 4
The radiant heat generated from the processing liquid stored in the substrate keeps the temperature of the substrate 1 located immediately above it. In addition, since the cover 5 provided so as to surround the substrate also prevents heat from being released to the outside, the atmosphere near the substrate 1 is kept warm.
The substrate temperature is stably maintained at a predetermined processing temperature.

Further, since the processing liquid is constantly supplied to the liquid storage pan 4, excess processing liquid rides over the tank wall of the liquid storage pan 4 and falls down, and a processing liquid discharge section provided at the bottom of the processing tank 20. Collected by 10. Thereafter, the processing bath 20 is drained through a drain 10a provided in the processing liquid discharge unit 10.
It is discharged outside.

Here, the distance between the lower surface of the substrate 1 and the processing liquid stored in the liquid storage pan 4 is desirably about 5 mm to 15 mm in order to transfer radiant heat more efficiently. If the depth of the liquid storage pan 4 is too large, the processing liquid is not replaced, so that the depth is 10 mm to 30 mm.
The degree is preferred. Further, the size of the liquid storage pan 4 is not particularly limited as long as the processing liquid dripping from the substrate 1 can be received, but is 5 mm to 20 m larger than the substrate size.
It is good to make it about m larger.

Also, the distance between the cover 5 and the upper surface of the substrate 1 is
In order to keep the atmosphere near the substrate 1 more efficiently,
It is preferably about 50 mm to 50 mm. It is desirable that the size of the cover 5 be larger than the substrate size as in the case of the liquid storage pan 4 in order to exert a more heat retaining effect. The dimensions of these parts shown above are the optimal values for keeping the substrate warm efficiently, and are not particularly limited.

By using the wet single-wafer processing apparatus of this configuration, the radiant heat of the processing liquid stored in the liquid storage pan and the heat retaining effect of the cover ensure uniform and stable temperature of the substrate surface to be processed. Can be As a result, temperature unevenness on the surface of the substrate to be processed is prevented, so that uniform substrate processing can be performed on the entire substrate and no processing unevenness occurs.

(Example) Next, an example based on the embodiment of the present invention will be described. FIG. 2 is a diagram showing a temperature change at an arbitrary point on the processing surface of the substrate in the present embodiment. In this embodiment, the substrate to be processed is 360 mm × 46 mm.
Using a 5 mm liquid crystal substrate, the temperature at any one point on the treated surface was measured over time using a thermocouple. Also, a stripping solution is used as the processing solution, and the processing temperature of this processing solution is 80.
° C. Furthermore, the substrate transfer speed is 1500 mm
/ min.

Referring to FIG. 2, while the substrate temperature in the case of using the conventional wet single wafer processing apparatus is unstable, the substrate temperature in the present embodiment is stably maintained at about 80 ° C. which is the processing temperature. You can see that it is done.

In the embodiment described above,
Although the case where a stripping liquid is used as the processing liquid has been described as an example, a developing liquid, an etching liquid, or the like may be used as another processing liquid.

In addition, the wet sheet processing apparatus of the above-described embodiment includes not only the liquid pan but also a cover for obtaining a greater effect. Naturally, the wet sheet processing apparatus having only the liquid pan is provided. The effect can be obtained even with a leaf processing device.

In the above embodiment, the processing liquid stored in the liquid storage pan is brought into contact with the lower surface of the substrate.
If possible, a wet single-wafer processing apparatus having a structure in which these are brought into contact may be used. The substrate holding means may or may not be in contact with the processing liquid stored in the liquid storage pan.

Therefore, the above-described embodiment disclosed herein is illustrative in all aspects and is not restrictive.
The technical scope of the present invention is defined by the appended claims, and includes all modifications within the meaning and scope equivalent to the description of the appended claims.

[0037]

According to the present invention, by providing a liquid reservoir pan having a relatively simple structure, the temperature of the substrate can be raised and kept warm without adding new external energy. Of the temperature distribution is stabilized and uniformized. As a result, the yield can be improved by stabilizing the processing process, the processing capacity can be improved by shortening the processing time, and the amount of the processing solution can be reduced, leading to a reduction in manufacturing cost. Further, by providing the cover, a further effect can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view showing the structure of a wet single wafer processing apparatus according to an embodiment of the present invention.

FIG. 2 is a diagram showing a temperature change at an arbitrary point on an upper surface of a substrate in an example based on the embodiment of the present invention.

FIG. 3 is a schematic sectional view showing the structure of a conventional wet single wafer processing apparatus.

[Explanation of symbols]

1 substrate, 3 shower unit, 4 reservoir pan, 5 cover, 10 substrate processing unit, 10a drain, 18 transport roller, 20 processing tank.

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4F041 AA06 AB01 BA13 BA47 4F042 AA07 BA04 BA19 CA01 CA08 CB21 DE01 DE07 DF19 5F046 LA11 LA13

Claims (5)

[Claims] 1. A wet single-wafer processing apparatus comprising: holding means for holding a substrate; and processing liquid discharging means for discharging a processing liquid toward the substrate, wherein the wet processing apparatus receives and discharges the dropped processing liquid. A wet processing unit, comprising: a processing liquid discharge unit to be processed; and a processing liquid storage tank having an upper surface opening that is located between the holding unit and the processing liquid discharge unit and stores a processing liquid dripping from the substrate. 2. The wet single wafer processing apparatus according to claim 1, further comprising a cover located above the substrate and keeping the substrate warm. 3. The method according to claim 1, wherein the holding unit includes a transfer unit that continuously transfers a plurality of substrates, and the plurality of substrates are continuously processed by the processing liquid discharge unit. Wet single wafer processing equipment. 4. The processing liquid storage tank includes a heat insulating member.
The wet single wafer processing apparatus according to claim 1. 5. The wet single-wafer processing apparatus according to claim 1, wherein the cover includes a heat insulating member.