KR20100070872A - Organic light emitting device - Google Patents

Abstract

PURPOSE: An organic light emitting device is provide to reduce the intensity of light outputted from pixels which are arranged in pixel array. CONSTITUTION: A plurality of thin film transistors are formed on a substrate(110). A plurality of pixel electrodes(190) are connected to the thin film transistor. A plurality of organic light emitting members(370) are respectively formed on the pixel electrode. A common electrode(270) is formed on the light emitting member. A plurality of light shield layers(128) is formed on the substrate. The light shield layers are respectively overlapped with the pixel electrode. The pixel electrodes are arranged in matrices.

Description

Organic Light Emitting Display {ORGANIC LIGHT EMITTING DEVICE}

The present invention relates to an organic light emitting display device.

Recently, there is a demand for weight reduction and thinning of a monitor or a television, and according to such a demand, a cathode ray tube (CRT) has been replaced by a liquid crystal display (LCD).

However, the liquid crystal display device requires not only a separate backlight as a light emitting device, but also has many problems in response speed and viewing angle.

Recently, as a display device capable of overcoming such a problem, an organic light emitting device (OLED) has attracted attention.

The organic light emitting diode display includes two electrodes and a light emitting layer interposed therebetween, and electrons injected from one electrode and holes injected from another electrode are combined in the light emitting layer to form excitons. The excitons emit light while releasing energy.

The organic light emitting diode display is not only advantageous in terms of power consumption because it does not need a separate light source, and also has excellent response speed, viewing angle, and contrast ratio.

The organic light emitting diode display may be classified into a passive matrix OLED of a simple matrix type and an active matrix OLED of an active matrix type according to a method of driving an organic light emitting cell.

Among these, an active matrix type organic light emitting display device is a driving thin film transistor that is connected to a signal line to control a data voltage and a data voltage received therefrom as a gate voltage to drive current through the light emitting device. And driving thin film transistors.

Therefore, when the switching transistor is turned on by a signal transmitted through the signal line, a data voltage is applied to the gate voltage of the driving thin film transistor through the turned-on switching transistor, and a current is applied to the organic light emitting layer of the driving thin film transistor through the driving thin film transistor. Flows to emit light of the organic light emitting cell.

In this case, the gray scale may be determined by variously adjusting the amount of current flowing through the driving thin film transistor by applying the data voltage according to the gray scale, and the organic light emitting cell is divided into red, green, and blue pixels. It is provided to implement a color screen.

The organic light emitting diode display is classified into a top emission method and a bottom emission method according to a direction in which an image is displayed. The top emission method forms a cathode using a transparent electrode material such as ITO or IZO. The anode electrode is formed of an opaque conductive material, and in the back emission method, the electrode is arranged in reverse. In addition, if necessary, the anode may be disposed upward while adopting a top emission method.

In general, there are several methods for arranging red, green, and blue pixels. Among them, a stripe type for arranging pixels of the same color in columns, a mosaic type for sequentially arranging pixels of red (R), green (G) and blue (B) in the column and row directions, There is a delta type in which the pixels are arranged in a zigzag form so as to be staggered in the column direction, and the pixels of red (R), green (G), and blue (B) are sequentially arranged.

When red, green, and blue pixels are arranged in a stripe form, the pixel columns disposed at the outermost portions on the left and right sides of the organic light emitting diode display are immediately adjacent to the black non-display area. The optical illusion occurs that the luminance of the pixels arranged in these portions is relatively higher than the luminance of the pixels arranged in the other pixel columns. In particular, when a color having a high luminance such as white is displayed through the display area in which pixels are arranged, this optical illusion becomes more prominent. As a result, the pixel color of the pixel strings disposed on the outermost portions of the left and right sides of the organic light emitting diode display is more noticeable to the user. In particular, the color of the corresponding pixel strings to be displayed on the white is clearly visible to the user. The problem of seeing blue stripes occurs.

An object of the present invention is to improve the image quality of an organic light emitting display device.

An organic light emitting diode display according to an aspect of the present invention includes a substrate, a plurality of first thin film transistors formed on the substrate, a plurality of pixel electrodes connected to the first thin film transistors, and a plurality of pixel electrodes respectively formed on the substrate. A plurality of organic light emitting members, a common electrode formed on the light emitting member, and a plurality of light blocking films formed on the substrate and overlapping the pixel electrodes, respectively.

The pixel electrodes are arranged in a matrix, and the light blocking film is formed in the outermost pixel column of the pixel electrode.

It is preferable that the pixel columns in which the light blocking film is formed emit the same light.

The light blocking layer may overlap with about 20% to 40% of the aperture ratio of the pixel electrode.

The first thin film transistor may include a first control electrode formed on the substrate, a semiconductor overlapping the first control electrode, and a first input and output electrode overlapping the semiconductor and facing the first control electrode. The light blocking layer may be formed of the same material on the same layer as the first control electrode.

Preferably, the organic light emitting diode display is a bottom emission method.

The light blocking layer may have a shape long in the vertical direction.

In the OLED display according to the above feature, a first signal line, a second signal line intersecting the first signal line, a second input terminal is connected to the first signal line, and a second control terminal is connected to the second signal line. The display device may further include a second thin film transistor having a second output terminal connected to a second control terminal of the first thin film transistor.

According to this aspect of the invention, by the light blocking film, the amount of light output from the pixels arranged in the pixel columns causing the optical illusion such as showing a higher luminance than other pixel columns is reduced. Accordingly, the deterioration of image quality caused by the vertical streaks of a specific color due to optical illusion is reduced, thereby improving the image quality of the organic light emitting display device.

DETAILED DESCRIPTION Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention. In the drawings, parts irrelevant to the description are omitted in order to clearly describe the present invention, and like reference numerals designate like parts throughout the specification.

In the drawings, the thickness of layers, films, panels, regions, etc., are exaggerated for clarity. Like parts are designated by like reference numerals throughout the specification. When a part of a layer, film, region, plate, etc. is said to be "on" another part, this includes not only the other part being "right over" but also another part in the middle. On the contrary, when a part is "just above" another part, there is no other part in the middle.

First, an organic light emitting diode display according to an exemplary embodiment of the present invention will be described in detail with reference to FIG. 1.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

Referring to FIG. 1, the organic light emitting diode display according to the present exemplary embodiment includes a plurality of signal lines 121, 171, and 172, and a plurality of pixels PX connected to them and arranged in a substantially matrix form. do.

The signal line includes a plurality of gate lines 121 for transmitting a gate signal (or scan signal), a data line 171 for transmitting a data signal, and a plurality of driving voltage lines 172 for transmitting a driving voltage. The gate lines 121 extend substantially in the row direction, and are substantially parallel to each other, and the data line 171 and the driving voltage line 172 extend substantially in the column direction, and are substantially parallel to each other.

Each pixel PX includes a switching transistor Qs, a driving transistor Qd, a capacitor Cst, and an organic light emitting diode LD.

The switching transistor Qs has a control terminal, an input terminal, and an output terminal. The control terminal is connected to the gate line 121, the input terminal is connected to the data line 171, and the output terminal is a driving transistor ( Is connected to Qd). The switching transistor Qs transfers the data signal applied to the data line 171 to the driving transistor Qd in response to the scan signal applied to the gate line 121.

The driving transistor Qd also has a control terminal, an input terminal and an output terminal, the control terminal being connected to the switching transistor Qs, the input terminal being connected to the driving voltage line 172, and the output terminal being the organic light emitting diode. It is connected to (LD). The driving transistor Qd flows an output current I _LD whose magnitude varies depending on the voltage applied between the control terminal and the output terminal.

The capacitor Cst is connected between the control terminal and the input terminal of the driving transistor Qd. The capacitor Cst charges the data signal applied to the control terminal of the driving transistor Qd and maintains it even after the switching transistor Qs is turned off.

The organic light emitting diode LD has an anode connected to the output terminal of the driving transistor Qd and a cathode connected to the common voltage Vss. The organic light emitting diode LD displays an image by emitting light having a different intensity depending on the output current I _LD of the driving transistor Qd.

The switching transistor Qs is an n-channel field effect transistor (FET) and the driving transistor Qd is a p-channel field effect transistor. However, the channel types of the switching transistor Qs and the driving transistor Qd may be reversed, and both transistors Qs and Qd may be n-channel field effect transistors or p-channel field effect transistors. In addition, the connection relationship between the transistors Qs and Qd, the capacitor Cst, and the organic light emitting diode LD may be changed.

2 and 3 will be described in detail with reference to the organic light emitting display device according to an embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment, and FIG. 3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along a line III-III.

A buffer layer 111 made of silicon nitride (SiNx), silicon oxide (SiOx), or the like is formed on an insulating substrate 110 made of transparent glass or plastic. The buffer layer 111 may have a double layer structure.

The buffer layer 111 serves to prevent penetration of impurity elements and planarize the surface, and may be omitted as necessary.

A plurality of pairs of first and second island-like semiconductors 151a and 151b made of polycrystalline silicon are formed on the buffer layer 111. Each of the island-like semiconductors 151a and 151b includes a plurality of impurity regions including n-type or p-type conductive impurities and at least one intrinsic region containing almost no conductive impurities.

In the first semiconductor 151a, the impurity region includes first source and drain regions 153a and 155a and an intermediate region 154a, which are doped with n-type impurities Are separated from each other. The intrinsic region includes a first channel region (not shown) located between the impurity regions 153a and 155a.

In the second semiconductor 151b, the impurity regions include second source and drain regions 153b and 155b, which are doped with p-type impurities and are separated from each other. The intrinsic region includes a second channel region 154b located between the second source and drain regions 153b and 155b.

The impurity regions 153a, 155a, 153b, and 155b of the first and second semiconductors 151a and 151b are lightly doped between the channel regions 154a and 154b and the source and drain regions 153a, 155a, 153b and 155b. It may further include a lightly doped region (not shown). This lightly doped region may be replaced with an offset region containing little impurities.

Alternatively, the impurity regions 153a and 155b of the first semiconductor 151a may be doped with p-type impurities, or the impurity regions 153b and 155b of the second semiconductor 151b may be doped with n-type impurities. Examples of the p-type conductive impurity include boron (B) and gallium (Ga), and examples of the n-type conductive impurity include phosphorus (P) and arsenic (As).

A gate insulating layer 140 made of silicon nitride or silicon oxide is formed on the semiconductors 151a and 151b and the buffer layer 111.

A plurality of gate lines 121 including a first control electrode 124a, a plurality of second control electrodes 124b, and a plurality of light blocking films 128 are disposed on the gate insulating layer 140. A plurality of gate conductors is formed.

The gate line 121 transmits a gate signal and mainly extends in a horizontal direction. The first control electrode 124a extends downward from the gate line 121 to intersect the first semiconductor 151a and overlaps the first channel region 154a. Each gate line 121 may include a wide end portion for connection with another layer or an external driving circuit. When a gate driving circuit (not shown) generating a gate signal is integrated on the substrate 110, the gate line 121 may extend to be directly connected to the gate driving circuit.

The second control electrode 124b is separated from the gate line 121 and overlaps the second channel region 154b of the second semiconductor 151b. The second control electrode 124b has an extension 127 extending from the second control electrode 124b in a substantially rectangular shape.

The light blocking film 128 is formed only in the pixels in which the display areas are arranged in the outermost pixel columns on the left and right sides, and thus has an island-like shape long in the vertical direction. However, the present invention is not limited thereto, and the light blocking layer 128 may be formed on the right side, the both sides, the top and bottom of the pixel, or the top or the bottom of the pixel. Designed to block

The gate conductors 121, 124b, and 128 are aluminum-based metals such as aluminum (Al) and aluminum alloys, silver-based metals such as silver (Ag) and silver alloys, copper-based metals such as copper (Cu) and copper alloys, and molybdenum (Mo). ) And molybdenum-based metals such as molybdenum alloys, chromium (Cr), tantalum (Ta) and titanium (Ti). However, they may have a multilayer structure including two conductive films (not shown) having different physical properties. One of the conductive films is made of a metal having low resistivity, such as aluminum-based metal, silver-based metal, or copper-based metal, so as to reduce signal delay or voltage drop. On the other hand, other conductive films are made of other materials, particularly materials having excellent physical, chemical and electrical contact properties with indium tin oxide (ITO) and indium zinc oxide (IZO), such as molybdenum-based metals, chromium, titanium, tantalum, and the like. Good examples of such a combination include a chromium bottom film, an aluminum (alloy) top film, and an aluminum (alloy) bottom film and a molybdenum (alloy) top film. However, the gate conductors 121, 124b, and 128 may be made of various metals or conductors.

Side surfaces of the gate conductors 121, 124b, and 128 are inclined with respect to the substrate 110, and the inclination angle is preferably about 30 ° to about 80 °.

An interlayer insulating film 160 is formed on the gate conductors 121, 124b, and 128. The interlayer insulating layer 160 is made of an inorganic insulator such as silicon nitride or silicon oxide, an organic insulator, or a low dielectric insulator. The dielectric constant of the organic insulator and the low dielectric insulator is preferably 4.0 or less. Examples of the low dielectric insulator include a-Si: C: O and a-Si: O formed by plasma enhanced chemical vapor deposition (PECVD). : F, etc. can be mentioned. The interlayer insulating layer 160 may be formed by having photosensitivity among the organic insulators, and the surface of the interlayer insulating layer 160 may be flat.

In the interlayer insulating layer 160 and the gate insulating layer 140, a plurality of contact holes 163a, 163b, 165a, and 165b exposing source and drain regions 153a, 153b, 155a, and 155b of the first and second semiconductors, respectively, are held. A contact hole 164 exposing the electrode 127 is formed.

On the interlayer insulating layer 160, a plurality of data lines 171, a plurality of driving voltage lines 172, a plurality of first output electrodes 175a, and a second output electrode ( A plurality of data conductors including 175b are formed.

The data line 171 transmits a data signal and mainly extends in the vertical direction to cross the gate line 121. Each data line 171 includes a plurality of first input electrodes 173a connected to the first source region 153a through the contact hole 163a and may be connected to another layer or an external driving circuit. It may include a wide end portion for connection. When a data driving circuit (not shown) generating a data signal is integrated on the substrate 110, the data line 171 may be extended to be directly connected to the data driving circuit.

The driving voltage line 172 transfers a driving voltage and mainly extends in the vertical direction to cross the gate line 121. Each driving voltage line 172 includes a plurality of second input electrodes 173b connected to the second source region 153b through the contact hole 163b. In addition, the driving voltage line 172 includes an expansion part 178 extending toward the storage electrode 127 to form an upper electrode, and the expansion part 178 overlaps the storage electrode 127 to form a storage capacitor.

The first output electrode 175a is separated from the data line 171 and the driving voltage line 172 and has a rectangular shape. The first output electrode 175a is connected to the sustain electrode 127 and the first drain region 155a through the contact holes 164 and 165a, respectively.

The second output electrode 175b is separated from the data line 171, the driving voltage line 172, and the first output electrode 175a and has a rectangular shape. The second output electrode 175b opens the contact hole 165b. It is connected to the second drain region 155b through.

The data conductors 171, 172, 175a, and 175b are preferably made of a refractory metal such as molybdenum, chromium, tantalum, and titanium, or an alloy thereof, and include a refractory metal film (not shown) and a low resistance conductive film (not shown). It may have a multi-layer structure including). Examples of the multilayer structure include a double layer of chromium or molybdenum (alloy) lower layer and an aluminum (alloy) upper layer, and a triple layer of molybdenum (alloy) lower layer and aluminum (alloy) interlayer and molybdenum (alloy) upper layer. However, the data conductors 171, 172, 175a, and 175b may be made of various other metals or conductors.

Like the gate conductors 121 and 121b, the data conductors 171, 172, 175a, and 175b also preferably have their side surfaces inclined at an inclination angle of about 30 ° to about 80 ° with respect to the surface of the substrate 110.

A passivation layer 180 is formed on the data conductors 171, 172, 175a, and 175b. The passivation layer 180 is made of an inorganic material, an organic material, a low dielectric insulating material, or the like.

The passivation layer 180 is provided with a plurality of contact holes 185 exposing the second output electrode 175b. A plurality of contact holes (not shown) may also be formed in the passivation layer 180 to expose an end portion of the data line 171, and an end portion of the gate line 121 may be formed in the passivation layer 180 and the interlayer insulating layer 160. A plurality of contact holes (not shown) may be formed to reveal the gaps.

A plurality of pixel electrodes 190 are formed on the passivation layer 180. The pixel electrode 190 is physically and electrically connected to the second output electrode 175b through the contact hole 185 and is made of a transparent conductive material such as ITO or IZO, or a reflective metal such as aluminum, silver, or an alloy thereof. Can lose.

A plurality of contact assistants (not shown) or connecting members (not shown) may also be formed on the passivation layer 180, and these may be gate lines 121 and data lines 171. It is connected to the exposed end of.

A partition 361 is formed on the passivation layer 180. The partition 361 surrounds the edge of the pixel electrode 190 like a bank to define an opening 365 and is made of an organic insulator or an inorganic insulator. The partition 361 may also be made of a photosensitizer including a black pigment, in which case the partition 361 serves as a light blocking member and the forming process is simple.

An organic light emitting member 370 is formed in the opening 365 on the pixel electrode 190 defined by the partition 361. A portion of the organic light emitting member 370 overlaps the light blocking layer 128 through the pixel electrode 190. In this case, the overlapping size of the organic light emitting member 370 and the light blocking layer 128 may be about 20 to 40% of the size of the opening of the pixel electrode 190, and preferably about 30%.

The organic light emitting member 370 is made of an organic material that uniquely emits light of any one of primary colors such as three primary colors of red, green, and blue. The organic light emitting diode display displays a desired image by using a spatial sum of primary color light emitted by the organic light emitting members 370. In the organic light emitting diode display according to the present exemplary embodiment, the organic light emitting member 370 of the pixels positioned in the same pixel column is made of an organic material that emits the same light, and the organic light emitting member 370 of the pixels positioned in two adjacent pixel columns. The pixel colors are arranged in the form of stripes made of organic materials emitting different light.

As such, when the pixels are arranged in a stripe shape, the organic light emitting member 370 of the pixel column formed on the left side of the display area is made of an organic material emitting red light, and the organic light emitting member of the pixel column formed on the right side of the display area ( 370 is made of an organic material emitting blue light, but is not limited thereto. However, in contrast, the organic light emitting display device may have pixel colors arranged in a shape other than stripes.

The organic light emitting member 370 may have a multilayer structure including an auxiliary layer (not shown) for improving the light emitting efficiency of the light emitting layer in addition to the light emitting layer (not shown) for emitting light. The auxiliary layer includes an electron transport layer (not shown) and a hole transport layer (not shown) for balancing electrons and holes, and an electron injection layer for enhancing the injection of electrons and holes ( electron injecting layers (not shown) and hole injecting layers (not shown).

The common electrode 270 is formed on the organic light emitting member 370. The common electrode 270 receives a common voltage Vss and is made of a reflective metal including calcium (Ca), barium (Ba), magnesium (Mg), aluminum, silver, or the like, or a transparent conductive material such as ITO or IZO. .

In the organic light emitting diode display, the first semiconductor 151a, the first control electrode 124a connected to the gate line 121, the first input electrode 173a connected to the data line 171, and the first The output electrode 175a forms a switching TFT Qs, and a channel of the switching TFT Qs is formed in the channel regions 154a1 and 154a2 of the first semiconductor 151a. Connected to the second semiconductor 151b, the second control electrode 124b connected to the first output electrode 175a, the second input electrode 173b connected to the driving voltage line 172, and the pixel electrode 190. The second output electrode 175b forms a driving TFT Qd, and a channel of the driving thin film transistor Qd is formed in the channel region 154b of the second semiconductor 151b. The pixel electrode 190, the organic light emitting member 370, and the common electrode 270 form an organic light emitting diode, and the pixel electrode 190 becomes an anode and the common electrode 270 becomes a cathode or vice versa. The electrode 190 is a cathode and the common electrode 270 is an anode. The storage electrode 127 overlapping each other and the extension 178 of the driving voltage line 172 form a storage capacitor Cst.

The organic light emitting diode display emits light toward the bottom of the substrate 110 to display an image. Therefore, the organic light emitting diode display according to the present exemplary embodiment includes a transparent pixel electrode 190 and an opaque common electrode 270, and the bottom emission method of displaying an image in the downward direction of the substrate 110 is performed. It is a light emitting display device.

When the pixel colors are arranged in a stripe shape, the pixels of the pixel columns arranged at the outermost sides of the left and right sides of the display area have their own colors, for example, red and blue colors, and the immediately adjacent non-display area is black. Therefore, even when the same data voltage is applied, the optical illusion that is visible as if the luminance is higher than that of the pixels of other pixel columns occurs.

Due to this optical illusion, in order to solve the problem that the colors of the pixel columns disposed at the outermost sides of the left and right sides are displayed as vertical stripes, the luminance of the pixel columns disposed at the outermost sides of the left and right sides should be lower than that of other pixel columns.

To this end, when the pixel aperture ratios of the pixel columns disposed at the left and right outermost sides of the display area are less than the pixel aperture ratios of the other pixel columns, the current density applied to the pixels is increased so that the columns of the organic light emitting member 370 of the pixels are increased. An increase in the generation rate and the like causes a problem that the deterioration rate of the organic light emitting member 370 is increased.

However, in the exemplary embodiment of the present invention, as described above, the light blocking film 128 overlapping the organic light emitting member 370 is formed in the outermost pixel columns on the left and right sides of the display area. ), That is, the area overlapping with the pixel electrode `90 is about 20% to 40% of the aperture ratio of the pixel electrode 190, and thus a part of light generated by the organic light emitting member 370, for example, For example, about 20% to 40% is blocked by the light blocking film 128 and is not output in the downward direction of the substrate 110.

Therefore, the luminance of light output from the pixels of the outermost pixel columns on the left and right sides of the display area is lower than the luminance of light output from the pixels of the other pixel columns. As a result, the luminance of the desired pixel, for example, the pixels located in the outermost pixel columns on the left and right sides of the display area, may be lowered without changing the size of the opening 365 of the pixel electrode 190 defined by the partition 361. It becomes possible. As a result, the optical illusion phenomenon in which the color of the pixels arranged in the outermost pixel columns on the left and right sides of the display area is remarkably recognized without causing deterioration of the pixels is reduced.

Meanwhile, the first and second semiconductors 151a and 151b may be amorphous silicon, and in this case, impurity regions do not exist separately in the first and second semiconductors 151a and 151b. Instead, an ohmic contact member made of n + hydrogenated amorphous silicon in which a high concentration of n-type impurities are doped between the first and second semiconductors 151a and 151b and the data conductors 171, 173b, 175a and 175b. Not).

In addition, the control electrodes 124a and 124b and the light blocking layer 128 of the switching transistor Qs and the driving transistor Qd may be disposed under the first and second semiconductors 154a and 154b, and the gate insulating layer 140 may also be provided. ) Is positioned between the first and second semiconductors 154a and 154b, the control electrodes 124a and 124b, and the light blocking layer 128. In this case, the data conductors 171, 172, 173b, and 175b may be positioned directly on the gate insulating layer 140.

In addition, the data conductors 171, 172, 173b, and 175b may be positioned under the first and first semiconductors 154a and 154b to be in electrical contact with the semiconductors 154a and 154b thereon.

An embodiment of the present invention has been described based on an active driving type organic light emitting display device having a pixel structure having two transistors and a capacitor, but is not limited thereto, and is like a pixel structure having three or more transistors and two or more capacitors. Of course, the present invention can be applied to an organic light emitting display device having another structure.

In addition to the organic light emitting display in the form of a stripe, the organic light emitting diode display may be applied to an organic light emitting display in which pixel colors are arranged in other forms.

Although the embodiments of the present invention have been described in detail above, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concepts of the present invention defined in the following claims are also provided. It belongs to the scope of rights.

1 is an equivalent circuit diagram of an organic light emitting diode display according to an exemplary embodiment of the present invention.

2 is a layout view of an organic light emitting diode display according to an exemplary embodiment.

3 is a cross-sectional view of the organic light emitting diode display of FIG. 2 taken along the line III-III.

Claims (8)

Board, A plurality of first thin film transistors formed on the substrate, A plurality of pixel electrodes connected to the first thin film transistors, respectively; A plurality of organic light emitting members each formed on the pixel electrode; A common electrode formed on the light emitting member; A plurality of light blocking films formed on the substrate and overlapping the pixel electrodes, respectively; An organic light emitting display device comprising a. In claim 1, The pixel electrodes are arranged in a matrix, The light blocking layer is formed in the outermost pixel column of the pixel electrode. In claim 2, And a pixel column in which the light blocking layer is formed emits the same light. In claim 1, The light blocking layer overlaps about 20% to 40% of the aperture ratio of the pixel electrode. In claim 1, The first thin film transistor, A first control electrode formed on the substrate, A semiconductor overlapping the first control electrode; A first input and output electrode overlapping the semiconductor and facing the first control electrode; The light blocking layer is formed of the same material on the same layer as the first control electrode. The method according to any one of claims 1 to 5, The organic light emitting diode display is a bottom emission method. The method according to any one of claims 1 to 5, The light blocking layer has an elongate shape in a vertical direction. In claim 5, First signal line, A second signal line crossing the first signal line, A second thin film having a second input terminal connected to the first signal line, a second control terminal connected to the second signal line, and a second output terminal connected to a second control terminal of the first thin film transistor An organic light emitting display device further comprising a transistor.

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