KR20100056083A - Iii-nitride semiconductor light emitting chip and method for manufacturing a package having the same - Google Patents

Iii-nitride semiconductor light emitting chip and method for manufacturing a package having the same Download PDF

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Publication number
KR20100056083A
KR20100056083A KR1020080115064A KR20080115064A KR20100056083A KR 20100056083 A KR20100056083 A KR 20100056083A KR 1020080115064 A KR1020080115064 A KR 1020080115064A KR 20080115064 A KR20080115064 A KR 20080115064A KR 20100056083 A KR20100056083 A KR 20100056083A
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South Korea
Prior art keywords
nitride semiconductor
group iii
iii nitride
light emitting
semiconductor layer
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KR1020080115064A
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Korean (ko)
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KR100975526B1 (en
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김동설
김창태
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주식회사 에피밸리
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

PURPOSE: A group III nitride semiconductor light emitting chip and a method for manufacturing a package including the same are provided to reduce the color deviation by including the hardened fluorescence film. CONSTITUTION: A plurality of group III nitride semiconductor layers comprise a group 13 nitride semiconductor layer, a group 23 nitride semiconductor layer, and an active layer(40). An active layer is positioned between the group 13 nitride semiconductor layer and the group 23 nitride semiconductor layer and generates the first light with the recombination of holes and electrons. The first bonding pad is electrically connected with the group 23 nitride semiconductor layer. A fluorescence film(90) is excited by the first light and generates the second light different from the first light. A fluorescence film is hardened and is located on the plurality of group III nitride semiconductor layers.

Description

III-nitride semiconductor light emitting chip and method for manufacturing a package having the same {III-NITRIDE SEMICONDUCTOR LIGHT EMITTING CHIP AND METHOD FOR MANUFACTURING A PACKAGE HAVING THE SAME}

The present disclosure generally relates to a group III nitride semiconductor light emitting chip and a method of manufacturing a package having the same, and particularly, may reduce color deviation, have a uniform color, and adjust thickness of a fluorescent film, and The present invention relates to a group III nitride semiconductor light emitting chip having a fluorescent film capable of adjusting a compounding ratio and improving a change in light emitting characteristics before and after wire bonding, and a method of manufacturing a package including the same.

Here, the semiconductor light emitting chip refers to a semiconductor optical device that generates light through recombination of electrons and holes, for example, a group III nitride semiconductor light emitting chip. The group III nitride semiconductor consists of a compound of Al (x) Ga (y) In (1-x-y) N (0 ≦ x ≦ 1, 0 ≦ y ≦ 1, 0 ≦ x + y ≦ 1). In addition, the GaAs type semiconductor light emitting chip used for red light emission, etc. are mentioned.

This section provides backgound informaton related to the present disclosure which is not necessarily prior art.

1 is a view illustrating an example of a conventional group III nitride semiconductor light emitting chip, wherein the group III nitride semiconductor light emitting chip is grown on the substrate 100, the buffer layer 200 grown on the substrate 100, and the buffer layer 200. n-type group III nitride semiconductor layer 300, an active layer 400 grown on the n-type group III nitride semiconductor layer 300, p-type group III nitride semiconductor layer 500, p-type 3 grown on the active layer 400 The p-side electrode 600 formed on the group nitride semiconductor layer 500, the p-side bonding pad 700 formed on the p-side electrode 600, the p-type group III nitride semiconductor layer 500 and the active layer 400 are formed. The n-side electrode 800 and the passivation layer 900 are formed on the n-type group III nitride semiconductor layer 300 exposed by mesa etching.

As the substrate 100, a GaN-based substrate is used as the homogeneous substrate, and a sapphire substrate, a SiC substrate, or a Si substrate is used as the heterogeneous substrate. Any substrate may be used as long as the group III nitride semiconductor layer can be grown. When a SiC substrate is used, the n-side electrode 800 may be formed on the SiC substrate side.

Group III nitride semiconductor layers grown on the substrate 100 are mainly grown by MOCVD (organic metal vapor growth method).

The buffer layer 200 is intended to overcome the difference in lattice constant and thermal expansion coefficient between the dissimilar substrate 100 and the group III nitride semiconductor, and US Pat. A technique for growing an AlN buffer layer having a thickness of US Pat. (0 ≦ x <1) A technique for growing a buffer layer is described, and US Patent Publication No. 2006/154454 discloses growing a SiC buffer layer (seed layer) at a temperature of 600 ° C. to 990 ° C., followed by In (x Techniques for growing a Ga (1-x) N (0 <x≤1) layer are described. Preferably, the undoped GaN layer is grown prior to the growth of the n-type Group III nitride semiconductor layer 300, which may be viewed as part of the buffer layer 200 or as part of the n-type Group III nitride semiconductor layer 300. .

In the n-type group III nitride semiconductor layer 300, at least a region (n-type contact layer) in which the n-side electrode 800 is formed is doped with impurities, and the n-type contact layer is preferably made of GaN and doped with Si. . U. S. Patent No. 5,733, 796 describes a technique for doping an n-type contact layer to a desired doping concentration by controlling the mixing ratio of Si and other source materials.

The active layer 400 is a layer that generates photons (light) through recombination of electrons and holes, and is mainly composed of In (x) Ga (1-x) N (0 <x≤1), and one quantum well layer (single quantum wells) or multiple quantum wells.

The p-type III-nitride semiconductor layer 500 is doped with an appropriate impurity such as Mg, and has an p-type conductivity through an activation process. U.S. Patent No. 5,247,533 describes a technique for activating a p-type group III nitride semiconductor layer by electron beam irradiation, and U.S. Patent No. 5,306,662 annealing at a temperature of 400 DEG C or higher to provide a p-type group III nitride semiconductor layer. A technique for activating is disclosed, and US Patent Publication No. 2006/157714 discloses a p-type group III nitride semiconductor without an activation process by using ammonia and a hydrazine-based source material together as a nitrogen precursor for growth of a p-type group III nitride semiconductor layer. Techniques have been described for making a layer having p-type conductivity.

The p-side electrode 600 is provided to supply a good current to the entire p-type group III nitride semiconductor layer 500. US Patent No. 5,563,422 is formed over almost the entire surface of the p-type group III nitride semiconductor layer. A light-transmitting electrode made of Ni and Au in ohmic contact with the p-type III-nitride semiconductor layer 500 is described. US Pat. No. 6,515,306 discloses n on the p-type III-nitride semiconductor layer. A technique is described in which a type superlattice layer is formed and then a translucent electrode made of indium tin oxide (ITO) is formed thereon.

On the other hand, the p-side electrode 600 may be formed to have a thick thickness so as not to transmit light, that is, to reflect the light toward the substrate side, this technique is referred to as flip chip (flip chip) technology. U. S. Patent No. 6,194, 743 describes a technique relating to an electrode structure including an Ag layer having a thickness of 20 nm or more, a diffusion barrier layer covering the Ag layer, and a bonding layer made of Au and Al covering the diffusion barrier layer.

The p-side bonding pad 700 and the n-side electrode 800 are for supplying current and wire bonding to the outside, and US Patent No. 5,563,422 describes a technique in which the n-side electrode is composed of Ti and Al.

The passivation layer 900 is formed of a material such as silicon dioxide and may be omitted.

Meanwhile, the n-type III-nitride semiconductor layer 300 or the p-type III-nitride semiconductor layer 500 may be composed of a single layer or a plurality of layers, and recently, the substrate 100 may be formed by laser or wet etching. A technique for manufacturing a vertical light emitting device by separating the from Group III nitride semiconductor layers has been introduced.

FIG. 2 is a diagram illustrating an example of a semiconductor light emitting chip (LED) package described in Korean Patent Publication No. 10-0818518. The heat sink 111, the chip 211 placed on the heat sink 111, and the chip 211. ) And a first lead frame 311 coupled to the heat sink 111 to be electrically connected through the bonding wire 411, and a second lead frame electrically connected to the chip 211 through the bonding wire 411. 511, the mold layer 611 that fixes the heat sink 111, the first lead frame 311, and the second lead frame 511 to form a body of the package, and a phosphor layer applied only around the chip 211. 711, a package including a light-transmissive encapsulant 811 covering the phosphor layer 711, and a lens 911 overlying the light-transmissive encapsulant 811 is described. Here, the chip 211 may be formed as an example of the group III nitride semiconductor light emitting chip described with reference to FIG. 1.

U.S. Patent Nos. 5,998,925 and 6,069,440 are fluorescent materials that may be provided in the phosphor layer 711 and include at least one element selected from the group consisting of Y, Lu, Sc, La, Gd and Sm, Al, Ga and A light emitting device including at least one element selected from the group consisting of In and emitting white light through a garnet-based (YAG: Ce) material activated by Ce is described, and US Patent No. 6,504,179 describes the fluorescent material. As a technique, there is described a light emitting device that emits white light through a garnet-based (TAG: Ce) -activated Ce material selected from the group consisting of Tb, Y, Gd, Lu and / or La.

A conventional group III nitride semiconductor light emitting chip and a package having the same include a chip 211 embedded in a frame 611 to be in contact with the heat sink 111, and the n-side electrode 800 provided in the chip 211 and the first side. After bonding the wire 411 to connect the first lead frame 311 and the p-side bonding pad 700 and the second lead frame 511, the phosphor layer 711 is coated around the chip 211. The process of completing the package through the light-transmissive encapsulant 811 and the lens 911.

However, the phosphor layer 711 is applied to the periphery of the chip 211 so as to surround not only the upper side of the chip 211 but also the left and right sides of the chip 211, and then cured to precipitate the phosphor layer 711 by precipitation of the fluorescent material during the curing process. There is a problem that the distribution of the fluorescent material from the top to the bottom may be non-uniform, there is a problem that the color deviation may occur, the color may change. In addition, there is a problem that it is difficult to control the thickness of the phosphor layer 711 and the mixing ratio of the fluorescent material.

On the other hand, the conventional group III nitride semiconductor light emitting chip and a package having the same, the light emission characteristics of the chip 211 is measured before applying the phosphor layer 711, the light emission characteristics of the package after applying the phosphor layer 711 As measured, there is a problem that light emission characteristics of the chip 211 and the package may be different.

This will be described later in the Specification for Implementation of the Invention.

SUMMARY OF THE INVENTION Herein, a general summary of the present disclosure is provided, which should not be construed as limiting the scope of the present disclosure. of its features).

According to one aspect of the present disclosure, a second conductivity is formed on a first group III nitride semiconductor layer having a first conductivity and a first group III nitride semiconductor layer, the second conductivity being different from the first conductivity. A third group III nitride semiconductor layer having an active layer and an active layer positioned between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer to generate first light by recombination of electrons and holes; A group nitride semiconductor layer; And a fluorescent film having a fluorescent material excited by the first light and emitting a second light different from the first light, wherein the fluorescent film is cured and positioned on the second group III nitride semiconductor layer. is excited by the first light and emits a second light different from the first light, and positioned over the second III-nitride semiconductor layer in the state of hardening). .

According to another aspect of the present disclosure, a second conductivity formed on the first group III nitride semiconductor layer having a first conductivity and the first group III nitride semiconductor layer and different from the first conductivity A third group III nitride semiconductor layer having an active layer and an active layer positioned between the first group III nitride semiconductor layer and the second group III nitride semiconductor layer to generate first light by recombination of electrons and holes; A group nitride semiconductor layer; A first bonding pad electrically connected to the second group III nitride semiconductor layer on the second group III nitride semiconductor layer; And a fluorescent film having a fluorescent material that is excited by the first light and emits a second light different from the first light, wherein the fluorescent film is positioned on the second group III nitride semiconductor layer and the first bonding pad, but the first bonding pad is exposed. A method for manufacturing a group III nitride semiconductor light emitting package comprising: a fluorescent film having a first cut-out; a first step of curing the fluorescent film to form a first cut-out; A second step of transferring the cured fluorescent film on the second group III nitride semiconductor layer; And a third step of wire bonding the first bonding pad to the first bonding pad through the first cutout portion of the fluorescent film.

This will be described later in the Specification for Implementation of the Invention.

The present disclosure will now be described in detail with reference to the accompanying drawing (s).

3 is a diagram illustrating an example of a group III nitride semiconductor light emitting chip according to the present disclosure, wherein the group III nitride semiconductor light emitting chip is formed on a substrate 10, a buffer layer 20, and a buffer layer 20 grown on the substrate 10. Grown on the grown n-type Group III nitride semiconductor layer 30 and the n-type Group III nitride semiconductor layer 30 and grown on the active layer 40 and the active layer 40 which generate first light by recombination of electrons and holes. The p-type group III nitride semiconductor layer 50 to be formed, the p-side electrode 60 formed on the p-type Group III nitride semiconductor layer 50, the p-side bonding pad 70 to be formed on the p-side electrode 60, and p The n-side electrode 80, the adhesive layer 65, and the fluorescent film 90 formed on the n-type III-nitride semiconductor layer 30 where the type-III group nitride semiconductor layer 50 and the active layer 40 are etched and exposed are formed. Include. The n-side electrode 80 not only contacts the n-type group III nitride semiconductor layer 30 for supplying current, but also serves as a bonding pad for wire bonding, which will be described later.

The p-side electrode 60 is formed of a light-transmitting electrode, and may be formed over the entire p-type group III nitride semiconductor layer 50, or may be formed in part.

The adhesive layer 65 is formed on the p-side electrode 60 to improve the binding force between the p-side electrode 60 and the fluorescent film 90. The adhesive layer 65 may be formed by applying an adhesive material on the p-side electrode 60. After the doping of the adhesive material on the p-side electrode 60, the adhesive layer 65 may be formed while being pressed and pressed. It may be.

The fluorescent film 90 is cured and positioned on the p-side electrode 60 and includes a fluorescent material that is excited by the first light and emits a second light different from the first light. The fluorescent material may be made of a yttrium-aluminum-garnet (YAG) system, a terbium-aluminum-garnet (TAG) system, or the like.

In addition, the fluorescent film 90 has cutouts 92 and 94.

The notch 92 is formed on the p-side bonding pad 70 side, and the notch 94 is formed on the n-side electrode 80 side. The shape of the cutout 92 may vary depending on the size or position of the p-side bonding pad 70. The perimeter of the cutout 92 may be clogged, and a portion of the perimeter of the cutout 92 may be opened. On the other hand, the cutout 92 is at least the p-side bonding pad 70 in order to facilitate bonding between the p-side bonding pad 70 and the wire to be described later with the fluorescent film 90 placed on the p-side electrode 60. It is preferably formed in the size of. The notch 94 exposes the n-side electrode 80 for bonding between the n-side electrode 80 and the wire to be described later, and fits the phosphor film in the light emitting chip. It is preferable to follow the shapes of the p-type group III nitride semiconductor layer 50 and the active layer 40 etched to form the n-side electrode 80 so that the light emitting chip can be improved. It is shaped like an arch.

The thickness of the fluorescent film 90 may be adjusted, one fluorescent film 90 may be disposed on the light emitting chip, and a plurality of fluorescent films 90B may be disposed. Accordingly, the fluorescent films 90B different in the fluorescent material may be used in combination, and the fluorescent films 90B different in the distribution of the fluorescent material may be used in combination. Through this, the distribution of the fluorescent material may be uniform, color deviation may be reduced, and color may be easily adjusted.

4 is a view showing another example of the fluorescent film included in the group III nitride semiconductor light emitting chip according to the present disclosure, wherein the fluorescent film 90 includes an opening 96. Description of the same reference numerals is omitted.

The opening 96 serves to allow a part of the first light generated in the active layer 40 (see FIG. 3) to directly exit the light emitting device without passing through the fluorescent material. Accordingly, it is possible to improve the loss of the amount of light that may occur while the first light passes through the fluorescent film 90. The opening 96 may be formed by forming a hole in the fluorescent film 90, may be formed by a line, and may have various sizes or shapes. The opening 96 is preferably formed in plurality in order to improve the light extraction efficiency.

5 is a view illustrating another example of the group III nitride semiconductor light emitting chip according to the present disclosure, wherein the group III nitride semiconductor light emitting chip is formed on the substrate 10, the buffer layer 20, and the buffer layer 20 grown on the substrate 10. Grown on the grown n-type Group III nitride semiconductor layer 30 and the n-type Group III nitride semiconductor layer 30 and grown on the active layer 40 and the active layer 40 which generate first light by recombination of electrons and holes. A p-type group III nitride semiconductor layer 50, a p-side electrode 60 formed on the p-type group III nitride semiconductor layer 50, a p-side bonding pad 70 formed on the p-side electrode 60, and The fluorescent film 90 is included.

This is a so-called vertical light emitting chip in which the substrate 10 is made of a conductive substrate and the n-type group III nitride semiconductor layer 30 can be electrically connected to the outside of the light emitting chip through the substrate 10. Another application example of the fluorescent film 90 is shown.

In the examples of the group III nitride semiconductor light emitting chip according to FIGS. 3 and 5, a protective film (not shown) may be disposed between the p-side electrode 60 and the fluorescent film 90.

Hereinafter, a method of manufacturing a package including a group III nitride semiconductor light emitting chip according to the present disclosure will be described in detail.

FIG. 6 is a view illustrating an example of a method of manufacturing the fluorescent film 90 included in the group III nitride semiconductor light emitting chip according to the present disclosure. The manufacturing method of the fluorescent film 90 may include the intaglio portion 90b and the protrusions ( Preparing the mold 99 having the 92b and 94b formed therein (see FIG. 5A), and filling the phosphor 98 with the squeeze 88 or the like on the intaglio portion 90b formed in the mold 99. (See FIG. 5 (b)), the step of curing the fluorescent solution 98 on the mold 99 to obtain the fluorescent film 90 (see FIG. 5 (c)), and the fluorescent film 90 ) Is transferred onto the p-side electrode 60 (see FIG. 5D). For example, the transfer of the fluorescent film 90 primarily moves the fluorescent film 90 from the mold 99 to the viscous sheet, and then moves the fluorescent film 90 onto the p-side electrode 60 from the sheet. This can be done by moving secondarily.

The fluorescent liquid 98 comprises a fluorescent material (eg, in powder form) and is made of a light transmissive material that can be cured within the mold 99. The fluorescent liquid 98 can be widely used as long as it can be cured by external conditions. For example, the phosphor 98 may be made of silicone, epoxy, silicone including silica, and sealing agent including silica in a binder form. On the other hand, the curing of the fluorescent liquid 98, when using the silicon as the fluorescent liquid 98, it may be made by gradually raising and lowering the temperature from about 100 ℃ to about 180 ℃ for about 6 hours.

The fluorescent film 90 is preferably attached by an adhesive material to secure the adhesion between the fluorescent film 90 and the p-side electrode 60. For example, as the adhesive material, silicone, epoxy, silicone including silica, encapsulant including binder silica, and the like may be used.

FIG. 7 is a view showing an example of a mold 99 used in a method of manufacturing a fluorescent film 90 included in a group III nitride semiconductor light emitting chip according to the present disclosure, and the intaglio portion 90b is a fluorescent film 90. The protrusions 92b and 94b are formed to have a depth of thickness, and the protrusions 92b and 94b are formed in the intaglio 90b at a height greater than or equal to the thickness of the cutouts 92 and 94 (shown in FIG. ) And the protrusions 92b and 94b are formed in a reverse shape of the fluorescent film 90 as a whole. For example, the depth of the intaglio portion 90b may be 200 μm to 300 μm, and a fluorescent film 90 having a thickness of 200 μm to 300 μm may be manufactured. Here, the mold 99 may be manufactured by wet etching, photolithography, transfer mold, or the like.

8 is a view showing another example of a method of manufacturing the fluorescent film 90 included in the group III nitride semiconductor light emitting chip according to the present disclosure, and the intaglio portion 90b is used to more effectively manufacture the fluorescent film 90. A plurality is formed in the mold 99. In this case, the plurality of intaglio portions 90b are positioned to correspond to the plurality of light emitting chips (here, the light emitting chips represent a state before the fluorescent film 90 is provided). Can be transferred to four light emitting chips.

9 is a view illustrating an example of a method of manufacturing a package having a group III nitride semiconductor light emitting chip according to the present disclosure. The method of manufacturing a package uses the light emitting chip 210 described with reference to FIG. Mounting the light emitting chip 210 on the package body 610 having the lead frame 310 and the lead frame 510 in contact with the heat sink 110 for heat dissipation. (See FIG. 8A), the p-side bonding pad 70 of the light emitting chip 210 and the lead frame 510 are connected to the wire 410 through the cutout 92, and the n-side electrode 80 Connecting the wire frame 415 to the lead frame 310 through the cutout 94 (see FIG. 8B), and the encapsulant 810 inside the package body 610 in which the light emitting chip 210 is embedded. ) Filling the lens (see (c) of Figure 8), mounting the lens 910 on the encapsulant 810 (see (d) of Figure 8). The encapsulant 810 and the lens 910 may be integrally formed.

FIG. 10 is a view illustrating another example of a method of manufacturing a package including a group III nitride semiconductor light emitting chip 210 according to the present disclosure. The method of manufacturing a package uses the light emitting chip 210 described with reference to FIG. 4. When the light emitting chip 210 is mounted in the package body 610, the lead frame 310 and the substrate 10 may be in direct contact, and thus the wire connection 415 (see FIG. 7) may be excluded.

Various embodiments of the present disclosure will be described below.

(1) A group III nitride semiconductor light emitting chip having a cured fluorescent film and a method of manufacturing a package including the same. As a result, color deviation can be reduced and color can be easily adjusted.

(2) A group III nitride semiconductor light emitting chip having a notch for wire bonding, and a method of manufacturing a package having the same. As a result, the light emission characteristics of the chip by the fluorescent material can be measured even before the package.

(3) A group III nitride semiconductor light emitting chip having an adhesive layer and a method of manufacturing a package having the same. Thereby, the adhesiveness of a fluorescent film can be improved and the integrity of a chip | tip can be improved.

(4) A group III nitride semiconductor light emitting chip comprising a plurality of fluorescent films and a method of manufacturing a package including the same. Thereby, the density and the characteristic of fluorescent substance can be changed.

(5) Group III nitride semiconductor light emitting chip having a fluorescent film prior to wire bonding and a method of manufacturing a package including the same.

According to one group III nitride semiconductor light emitting chip and a method of manufacturing the group III nitride semiconductor light emitting package having the same according to the present disclosure, it is possible to improve the occurrence of color deviation according to the fluorescent material.

According to another group III nitride semiconductor light emitting chip and a method of manufacturing a group III nitride semiconductor light emitting package including the same according to the present disclosure, color change according to a fluorescent material may be improved and color change may be easily adjusted.

According to another group III nitride semiconductor light emitting chip and a method of manufacturing a group III nitride semiconductor light emitting package having the same according to the present disclosure, it is possible to easily adjust the compounding ratio of the fluorescent material and to easily adjust the thickness of the fluorescent film. .

According to another group III nitride semiconductor light emitting chip and a method of manufacturing the group III nitride semiconductor light emitting package including the same according to the present disclosure, it is possible to improve that the light emission characteristics before and after wire bonding are changed.

1 is a view showing an example of a conventional group III nitride semiconductor light emitting chip,

2 is a view showing an example of a semiconductor light emitting chip (LED) package described in Korean Patent Publication No. 10-0818518,

3 is a view showing an example of a group III nitride semiconductor light emitting chip according to the present disclosure;

4 is a view showing another example of a fluorescent film provided in a group III nitride semiconductor light emitting chip according to the present disclosure;

5 is a view showing another example of the group III nitride semiconductor light emitting chip according to the present disclosure;

6 is a view showing an example of a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting chip according to the present disclosure;

7 is a view illustrating an example of a frame used in a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting chip according to the present disclosure;

8 is a view showing another example of a method of manufacturing a fluorescent film provided in a group III nitride semiconductor light emitting chip according to the present disclosure;

9 is a view showing an example of a method of manufacturing a package having a group III nitride semiconductor light emitting chip according to the present disclosure;

10 is a view showing another example of a method for manufacturing a package including a group III nitride semiconductor light emitting chip according to the present disclosure.

Claims (14)

A first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer formed on the first group III nitride semiconductor layer, and having a second conductivity different from the first conductivity, and a first group III nitride semiconductor layer; A plurality of group III nitride semiconductor layers positioned between the second group III nitride semiconductor layers and having an active layer that generates first light by recombination of electrons and holes; A first bonding pad electrically connected to the second group III nitride semiconductor layer; And, A fluorescent film comprising a fluorescent material excited by the first light and emitting a second light different from the first light, wherein the fluorescent film is cured and positioned on the plurality of group III nitride semiconductor layers and is formed to expose the first bonding pads. A group III nitride semiconductor light emitting chip comprising a; fluorescent film having a notch. In claim 1, A group III nitride semiconductor light emitting chip comprising a; adhesive layer attaching a fluorescent film to a plurality of group III nitride semiconductor layers. In claim 2, The group III nitride semiconductor light emitting chip, wherein the adhesive layer is made of the same material as the fluorescent film. In claim 1, And a second bonding pad electrically connected to the first group III nitride semiconductor layer to which the second group III nitride semiconductor layer and the active layer are etched and exposed. The fluorescent film has a second cutout portion formed to expose the second bonding pads, the group III nitride semiconductor light emitting chip. In claim 4, A group 3 nitride semiconductor light emitting chip, wherein the second cutout portion is open at one side. In claim 1, A group III nitride semiconductor light emitting chip comprising a plurality of layers of fluorescent films. In claim 1, The fluorescent film is a group III nitride semiconductor light emitting chip, characterized in that located in the upper surface of the plurality of group III nitride semiconductor layer. In claim 1, A second bonding pad electrically connected to the first group III nitride semiconductor layer to which the second group III nitride semiconductor layer and the active layer are etched and exposed; And, It includes; the adhesive layer for bonding the fluorescent film and the plurality of group III nitride semiconductor layer, The fluorescent film has a second cutout portion formed to expose the second bonding pads, the group III nitride semiconductor light emitting chip. In claim 1, The group III nitride semiconductor light-emitting chip, wherein the fluorescent film is cured to have an opening through which the first light passes. A first group III nitride semiconductor layer having a first conductivity, a second group III nitride semiconductor layer formed on the first group III nitride semiconductor layer, and having a second conductivity different from the first conductivity, and a first group III nitride semiconductor layer; A plurality of group III nitride semiconductor layers positioned between the second group III nitride semiconductor layers and having an active layer that generates first light by recombination of electrons and holes; A first bonding pad electrically connected to the second group III nitride semiconductor layer; And, A fluorescent film comprising a fluorescent material excited by the first light and emitting a second light different from the first light, the fluorescent film being positioned on the plurality of group III nitride semiconductor layers and having a first cutout portion where the first bonding pad is exposed; In the manufacturing method of a group III nitride semiconductor light emitting package comprising a; Curing the fluorescent film to form a first cutout; A second step of transferring the cured fluorescent film on the second group III nitride semiconductor layer; And, And a third step of wire bonding the first bonding pad to the first bonding pad through the first cutout portion of the fluorescent film. In claim 10, The first step is a method for manufacturing a group III nitride semiconductor light emitting package, characterized in that for curing the fluorescent film in the engraved mold. In claim 10, Group III nitride semiconductor light emitting package, And a second bonding pad electrically connected to the first group III nitride semiconductor layer to which the second group III nitride semiconductor layer and the active layer are etched and exposed. The first step is a method for manufacturing a group III nitride semiconductor light emitting package, characterized in that the fluorescent film is cured so that a second cutout portion through which the second bonding pad is exposed is formed. In claim 12, The third step is a method for manufacturing a group III nitride semiconductor package, characterized in that the wire bonding to the second bonding pad through the second cutout portion of the fluorescent film. In claim 12, In the first step, the fluorescent film is cured so that one side of the second cutout is opened.
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KR101645858B1 (en) * 2015-03-09 2016-08-04 한국광기술원 Passive type luminous element using phosphor sheet

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JPH09153645A (en) 1995-11-30 1997-06-10 Toyoda Gosei Co Ltd Group-iii nitride semiconductor light-emitting device
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