KR20100052667A - Back side illumination image sensor and method for manufacturing the same - Google Patents

Abstract

PURPOSE: A back-side illuminated image sensor and a method for manufacturing the same are provided to obtain a desired mechanical strength without a support plate by successively forming an epi layer and a logic circuit on a substrate. CONSTITUTION: A first substrate includes an element isolation region and a pixel region. A light sensor(120) is formed on the upper side of the first substrate. An epi layer(130) is formed on the entire surface of the first substrate on which the light sensor is formed. A read-out circuitry(150) is formed on the entire surface of the epi layer. An interlayer insulation layer(160) and a wiring(170) are is formed on the entire surface of the epi layer. A micro lens(190) is formed on the rear side of the first substrate.

Description

Back side illumination image sensor and method for manufacturing the same

Embodiments relate to a back-receiving image sensor.

An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is a charge coupled device (CCD) image sensor and a CMOS image sensor (CIS). Separated by.

In the prior art, a photodiode is formed on a substrate by ion implantation. As the size of the photodiode decreases for the purpose of increasing the number of pixels without increasing the chip size, the image quality decreases due to the reduction of the area of the light receiver.

In addition, since the stack height is not reduced as much as the area of the light receiving unit is reduced, the number of photons incident on the light receiving unit is also decreased due to the diffraction phenomenon of light called Airy Disk.

As an alternative to overcome this, an attempt has been made to receive light through the wafer back side to minimize the step difference on the top of the light receiving unit and to eliminate the interference of light due to metal routing (back light receiving image sensor). ought.

1 is a process cross-sectional view of a rear light receiving image sensor according to the prior art.

The back light receiving image sensor according to the prior art performs a back side grinding process (Back Side Grinding) to remove the back side of the substrate to a predetermined thickness after the wiring process with the light receiving element on the front of the substrate. This is to match the distance between the external module and the optical lens by grinding the back side of the substrate to an appropriate thickness.

However, the conventional back light receiving image sensor uses a silicon on insulator (SOI) wafer as a donor wafer in which a light receiving element and a circuit part are formed, and then uses a handle wafer and bonding. Let's do it. Thereafter, the backside polishing process is performed on the donor wafer.

The backside polishing process of the donor wafer according to the prior art is as follows.

First, donor wafer backside grinding is performed to leave dozens of micrometers on the basis of BOX (Buried Oxide). Thereafter, an etch-back is performed to complete a backside thinning process.

However, in the technology of the conventional back-receiving image sensor, a logic circuit portion and a photodiode (PD) are formed together in a prime wafer, which is a donor wafer, and a back polishing process is performed after an interconnection process. The remaining donor substrate after the back polishing process is so thin that it is difficult to follow-up. Therefore, according to the prior art, there is a problem that a separate process requiring a support plate, which is a handle wafer, is required.

In addition, according to the conventional technology of the back-receiving image sensor, a photodiode (PD) is formed in a pixel area of a prime wafer, which is a donor wafer, and a readout circuit is provided on one side of the photodiode in the pixel area. As a result, there is a problem in that the fill factor for the pixel area is reduced by the readout circuit area.

In addition, according to the related art, when the donor wafer backside grinding process (Grinding) is performed as shown in FIG. 1, wafer edge thinning occurs. Accordingly, in the subsequent etch-back process, the wafer edge chip may have a defect, thereby causing a problem of economic deterioration.

In addition, according to the related art, the wafer center is also exposed to plasma damage during an etch-back process having a thickness of several tens of micrometers, thereby increasing the possibility of deterioration of image sensor performance. There is a problem.

In addition, according to the prior art, expensive SOI wafers (Wafer) should be used as donor wafers, resulting in a high cost of the manufacturing process.

On the other hand, according to the prior art, the photodiode is deposited with amorphous Si, or the readout circuitry is formed on a silicon substrate, and the photodiode is formed on another wafer, and then wafer-to-wafer bonding. (Wafer-to-Wafer Bonding), an image sensor (hereinafter, referred to as a "3D image sensor") is formed in which a photodiode is formed on a readout circuit. The photodiode and lead-out circuit are connected via a metal line.

However, according to the prior art of the 3D image sensor, the wafer bonding with the lead-out circuit formed to the wafer with the photodiode is inevitably carried out. have. For example, according to the related art, a wiring is formed on a lead-out circuit and wafer-to-wafer bonding is performed so that the wiring and the photodiode contact each other. Ohmic contact between the wiring and the photodiode is difficult. In addition, according to the prior art, there is a problem that a short is generated in the wiring for electrically connecting the photodiode, and there is a research to prevent the short, but there is a problem in that a complicated process is required.

The embodiment is to provide a rear light receiving image sensor and a method of manufacturing the same, which can secure the mechanical strength necessary for the subsequent process even after backside grinding without a separate support plate in the back light receiving image sensor. do.

In addition, the embodiment is to provide a rear light-receiving image sensor and a method of manufacturing the same that can approach the fill factor 100% in the rear light-receiving image sensor.

In addition, the embodiment is to provide a back-receiving image sensor and a method of manufacturing the same that can remove the back side of the substrate stably and efficiently.

In addition, the embodiment is to provide a rear light-receiving image sensor and a method of manufacturing the same that can significantly reduce the manufacturing cost.

In addition, the embodiment can maximize the amount of incident light while minimizing the stack of the light receiving unit by forming a readout circuit on the upper side of the light sensing unit, and prevents interference and reflection of light due to metal routing. The present invention provides a rear light receiving image sensor and a method of manufacturing the same.

According to an embodiment, there is provided a light-receiving image sensor comprising: a light sensing unit formed on a front side of a first substrate including a device isolation region and a pixel region; An epitaxial layer formed on an entire surface of the first substrate on which the light sensing unit is formed; A lead-out circuit formed on the entire epi layer; An interlayer insulating layer and wiring formed on the entire surface of the epi layer; And a microlens formed on the light sensing unit on the back side of the first substrate.

In addition, the method of manufacturing a back-receiving image sensor according to an embodiment includes forming an ion implantation layer as a whole on a front side of a first substrate including a device isolation region and a pixel region; Forming a light sensing unit in the pixel region of the first substrate on which the ion implantation layer is formed; Forming an epitaxial layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Removing the lower side of the first substrate based on the ion implantation layer; And forming a microlens on the light sensing part of the first substrate back side.

In addition, the manufacturing method of the back-receiving image sensor according to the embodiment comprises the steps of forming a light sensing unit on the front side (Front Side) of the first substrate including the device isolation region and the pixel region; Forming an ion implantation layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming an epitaxial layer on an entire surface of the first substrate; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Removing the lower side of the first substrate based on the ion implantation layer; And forming a microlens on the light sensing part of the first substrate back side.

In addition, the manufacturing method of the rear light-receiving image sensor according to the embodiment comprises the steps of forming a light sensing unit on the front side (Front Side) of the first substrate including the device isolation region and the pixel region; Forming an epitaxial layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Firstly removing the lower side of the first substrate by backlining; Forming an ion-carrying layer as a whole on the rear surface of the first substrate exposed by the primary removal; Secondly removing a lower side of the first substrate based on the ion implantation layer; And forming a microlens on the light sensing part of the first substrate back side.

According to the rear light receiving image sensor and the manufacturing method thereof according to the embodiment, in order to ensure the mechanical strength necessary to proceed to the subsequent process even after the backside grinding (BackSide Grinding) without a separate support plate (support plate) in the rear light receiving image sensor By forming a photodiode on the substrate, forming an epi layer on the substrate, and forming a logic circuit portion on the epi layer, the epi layer acts like a support substrate, so that the thickness of the remaining substrate can be kept thick. Since there is no separate bonding process for the supporting substrate, there is an effect that the time and cost required for the process can be significantly reduced.

Further, in the embodiment, the photodiode is formed in the entire pixel region in the rear light-receiving image sensor, and the lead-out circuit is formed in the epi layer on the upper side of the photodiode, thereby making the fill factor close to 100%.

In addition, according to the embodiment, the back surface of the substrate may be stably and efficiently removed by using an ion implantation technique. In other words, according to the embodiment, back grinding and etching back are not necessary due to the ion implantation and the cleaving, which causes problems such as edge die failure and plasma damage. There is an advantage that does not.

Further, according to the embodiment, since the final grinding on the donor wafer does not proceed, there is an advantage that damage to the light sensing unit and the circuit unit can be prevented.

In addition, according to the embodiment, by using an epi wafer as a donor wafer, manufacturing costs may be significantly reduced compared to using an SOI wafer.

In addition, according to the embodiment, an epi wafer may be used as a donor wafer, and is easily manufactured without the need for a bonding process in a 3D image sensor that forms a photodiode on the upper side of the circuit. Therefore, there is no problem of bonding, problems of contact, and the like.

In addition, according to the embodiment, the amount of incident light may be maximized by minimizing the stack of the upper part of the light receiving unit, and the optical characteristics of the image sensor may be maximized by eliminating interference and reflection of light due to metal routing.

Hereinafter, a back light receiving image sensor and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings.

In the description of the embodiments, where it is described as being formed "on / under" of each layer, the top / bottom is formed directly and through another layer. It includes everything.

The present invention is not limited to the CMOS image sensor, and can be applied to any image sensor such as a CCD image sensor.

(First embodiment)

2 is a cross-sectional view of a rear light receiving image sensor according to the first embodiment.

The rear light receiving image sensor according to the first embodiment includes a light sensing unit 120 formed on a front side of the first substrate 100; An epitaxial layer 130 formed on an entire surface of the first substrate 100 on which the light sensing unit 120 is formed; A lead-out circuit 150 formed on an entire surface of the epi layer 130; An interlayer insulating layer 160 and a wiring 170 formed on the entire surface of the epi layer 130; And a microlens 190 formed on the light sensing unit 120 on the back side of the first substrate 100. Reference numerals in FIG. 2 will be described later in the manufacturing method.

According to the rear light receiving image sensor according to the embodiment, the photodiode substrate is used to secure the mechanical strength necessary for the subsequent process even after the back grinding process (Back Grinding) without a separate support plate in the rear light receiving image sensor After forming the epi layer on the substrate, the logic circuit part is formed on the epi layer so that the epi layer plays the same role as the supporting substrate, thereby increasing the thickness of the remaining substrate after the back grinding process. It can be maintained, and there is no bonding process of a separate supporting substrate, thereby reducing the time and cost required for the process.

In addition, in the embodiment, the photodiode is formed in the entire pixel region except the device isolation region in the rear light-receiving image sensor, and the readout circuit is formed on the epitaxial layer on the upper side of the photodiode, so that the fill factor is close to 100%.

Hereinafter, a method of manufacturing the rear light receiving image sensor according to the first embodiment will be described with reference to FIGS. 3 to 8.

3 to 5 are examples of forming the ion implantation layer 205.

First, as shown in FIG. 3, the ion implantation layer 105 may be formed on the front side of the first substrate 100. The first substrate 100 may be an epi wafer, but is not limited thereto. In an embodiment, the lower side 100a of the first substrate and the upper side 100b of the first substrate may be divided based on the ion implantation layer 105.

In the method of manufacturing a back-receiving image sensor according to an embodiment, an epi wafer may be used as the donor wafer 100. Accordingly, according to the embodiment, the manufacturing cost of the back light receiving image sensor is significantly increased compared to the use of the SOI wafer. Can be saved.

In the first embodiment, the ion implantation layer 105 may proceed through ion implantation with respect to the front side of the first substrate 100. Since the back side of the first substrate 100 reaches several hundred μm, ion implantation through the front side is preferable.

That is, since the thickness of the first substrate 100 is very thick compared to the ion implantation depth, ion implantation is difficult to proceed from the rear surface of the first substrate 100. Therefore, by forming the ion implantation layer 105 before the wiring 140 forming process or the bonding with the second substrate 200 as in the first embodiment, the lower side 100a of the first substrate can be easily removed after bonding. Can be. Of course, examples of such ion implantation are not limited and may be ion implanted to the rear surface after the first backgrinding process by the second embodiment described below.

In the first embodiment, the ion implantation layer 105 may be formed by implanting ions such as hydrogen (H) or helium (He) to form an ion implantation layer, but is not limited thereto.

Next, as another example of the first embodiment, as shown in FIG. 4, the device isolation region 110 may be formed on the entire surface of the first substrate 100, and then the ion implantation layer 105 may be formed. For example, the device isolation region 110 may be formed on the front surface of the first substrate 100 to define an optical sensing region of the pixel region, and the device isolation region 110 may be formed of STI, and then ion. The injection layer 105 may be formed.

Next, as another example of the first exemplary embodiment, as illustrated in FIG. 5, the ion sensing layer 105 may be formed after the light sensing unit 120 is formed in the pixel region. The light sensing unit 120 may be a photodiode, but is not limited thereto. The light sensing unit 120 forms an N-type ion implantation region 120 on the P-type first substrate 100, and a Po region (eg, a P region) on the N-type ion implantation region 120 of the first substrate 100. Not shown), but is not limited thereto. Excess electrons and the like can be prevented by the Po region. In addition, according to the embodiment, the charge dumping effect may be obtained by forming the PNP X-ray.

Meanwhile, in the exemplary embodiment, as illustrated in FIG. 5, the light sensing unit 120 may be formed in the entire pixel region except for the device isolation region 110. Thus, according to the embodiment, the fill factor is close to 100% while employing the rear light receiving image sensor. That is, the lead-out circuit 150 is formed on the epitaxial layer 130 on the upper side of the light sensing unit 120, which has an advantage of significantly increasing the fill factor.

Next, as shown in FIG. 6, an epitaxial layer 130 is formed on the first substrate 100 on which the light sensing unit 120 is formed. The epi layer 130 may be made of the same material as the first substrate 100. The epi layer 130 may be a single layer or a plurality of layers.

According to the rear light receiving image sensor and the manufacturing method thereof according to the embodiment, in order to ensure the mechanical strength necessary to proceed to the subsequent process even after the back grinding (Back Grinding) without a separate support plate (back plate) in the rear light receiving image sensor After the photodiode is formed on the substrate, the epi layer 130 is formed on the substrate, and the lead-out circuit 150, which is a logic part, is formed on the epi layer 130, thereby forming the epi layer 130. As it plays the same role, the thickness of the remaining substrate can be maintained thick, and since there is no bonding process of a separate supporting substrate, the time and cost required for the process can be significantly reduced.

Next, as shown in FIG. 7, the lead-out circuit 150, which is a circuit part, is formed on the entire surface of the epi layer 130. The readout circuit 150 may include a transistor 153 such as a transfer transistor, a reset transistor, a drive transistor, and a select transistor, but is not limited thereto.

In addition, the readout circuit 150 may further include a conductive connection part 151 electrically connected to the light sensing unit 120. The conductive connection 151 may be formed by ion implantation into the epi layer 130 or may form a via hole (not shown) in the epi layer 130, and fill the via hole with a metal layer.

The readout circuit 150 may include a conductive well 152 connected to the conductive connection unit 151 to receive optoelectronic information of the photosensitive unit 120.

For example, the N + well 152 may be made by a high concentration of N-type ion implantation on a part of the entire surface of the epi layer 130, but is not limited thereto. The conductive well 152 may be formed before the conductive connecting portion 151 is formed.

The readout circuit 150 may include a transistor 153 on one side of the conductive well 152. The transistor 152 illustrated in FIG. 9 may be a transfer transistor, but is not limited thereto.

For example, as shown in FIG. 9, the electronic information may move to the floating diffusion region (not shown) through the transfer transistor 153 through the conductive connection 151 and the conductive well 152, but is not limited thereto. For example, the electronic information may be directly transmitted to the gate of the drive transistor (not shown) through the conductive connector 151.

The readout circuit 150 may be formed on an inner side surface or an upper side surface of the epi layer 130. For example, FIG. 7 illustrates an example in which the readout circuit 150 is formed on the upper surface of the epi layer 130 in front, but is not limited thereto. That is, the transistor 153 of the readout circuit 150 may form a trench in the entire epi layer 130 and may be formed in the trench.

Subsequently, the interlayer insulating layer 160 may be formed on the entire epitaxial layer 130, and the wiring 170 may be formed on the interlayer insulating layer 160.

Next, as shown in FIG. 8, the lower side 100a of the first substrate is removed from the first substrate 100 based on the ion implantation layer 105. For example, heat treatment is performed on the ion implantation layer 105 to form hydrogen ions in the bubbles, and the lower side 100a of the first substrate is cut and removed by a blade, and the upper side of the first substrate ( 100b) can be left. Thereafter, a planarization process may be performed on the cut surface of the first substrate 100.

On the other hand, in the conventional three-dimensional (3D) image sensor patent applied to the cleaving technology, the light sensing unit and the lead-out circuit is formed on a separate wafer to perform bonding and interconnection process. The invention is mainstream, and in the prior art, a hydrogen or helium ion implantation process for forming a cleaving layer proceeds immediately before bonding.

However, according to the prior art of the 3D image sensor, there is a point in that electrical connection between the lead-out circuit and the photodiode is difficult to be made properly, and there is a problem in that a short occurs in the wiring for electrically connecting the photodiode.

On the other hand, in the prior art of the 3D image sensor, the hydrogen or helium ion implantation process is possible just before bonding, so that the electrons generated in the light sensing unit are transferred to the electronic circuit and converted into voltage, so that the photodiode (PD) is used in the light sensing unit. Since only a metal and an interlayer insulating film need to be formed, it is possible.

However, in the first embodiment, the light sensing unit 120 is formed on the first substrate 100, which is a wafer, and the readout circuit 150 is formed on the epi layer 130 on the upper side thereof. Accordingly, according to the first embodiment, the light sensing unit 120 and the lead-out circuit 150 are formed together in the front direction of the same first substrate 100 so that the wiring 140 and the interlayer insulating layer ( 160) BEOL process such as formation is essential.

Therefore, when the process scheme of the first embodiment is used, an ion implantation process using hydrogen or helium immediately before bonding as in the prior art is impossible, and as in the first embodiment, the first substrate (a donor wafer) The ion implantation layer 105 may be formed by performing a hydrogen or helium ion implantation process before the interconnection 140 and the interlayer dielectric layer 160 are formed on the epitaxial wafer 100.

Next, the color filter 180 may be formed on the light sensing unit 120 on the rear surface of the first substrate 100. In the case where the light sensing unit 120 is an R, G, or B vertical stacked photodiode, a color filter may not be formed.

Thereafter, the microlens 190 may be formed on the color filter 180.

According to the rear light-receiving image sensor and the manufacturing method thereof according to the first embodiment, the mechanical strength required to proceed to the subsequent process even after the back grinding process (Back Grinding) without a separate support plate in the rear light-receiving image sensor In order to form a photodiode on the substrate, an epi layer on the substrate, and a logic portion on the epi layer, the epi layer plays the same role as the supporting substrate, so that the thickness of the remaining substrate can be kept thick. Since there is no bonding process for the supporting substrate, there is an effect that the time and cost required for the process can be significantly reduced.

In addition, in the first embodiment, the photodiode is formed in the entire pixel region in the rear light-receiving image sensor, and the readout circuit is formed in the epi layer on the upper side of the photodiode, thereby making the fill factor close to 100%.

In addition, according to the first embodiment, the back surface of the substrate can be removed stably and efficiently by using an ion implantation technique.

Further, according to the first embodiment, since the grinding of the donor wafer does not proceed, there is an advantage that damage to the light sensing unit and the circuit unit can be prevented.

Further, according to the first embodiment, the light sensing unit and the circuit unit can be formed by using an epi wafer as a donor wafer. Accordingly, according to the embodiment, the use of epi wafers can significantly reduce manufacturing costs compared to using SOI wafers.

In addition, according to the first embodiment, an epi wafer may be used as a donor wafer, and a 3D image sensor for forming a photodiode on the upper side of the circuit by forming a light sensing unit and a circuit unit on the epi wafer. It is easy to manufacture without the need for a bonding process, and thus there is an advantage that there is no bonding problem, no contact problem, and the like.

In addition, according to the first embodiment, the amount of incident light can be maximized by minimizing the stack of the upper part of the light receiving unit, and the optical characteristics of the image sensor can be maximized by eliminating interference and reflection of light due to metal routing. have.

(2nd Example)

9 is a process cross-sectional view of a method of manufacturing a back-receiving image sensor according to a second embodiment.

The second embodiment may employ the features of the manufacturing method of the back-receiving image sensor according to the first embodiment.

On the other hand, unlike the first embodiment, unlike the first embodiment, the lower side of the first substrate 100 is first removed by backgrinding, and the ion implantation layer (Ion implantation layer) is formed by ion implantation under the remaining first substrate 100 ( 105 is formed to remove the lower side of the first substrate 100.

That is, in the second embodiment, an epitaxial layer 130 is formed on the first substrate 100 on which the light sensing unit 120 is formed, and a readout circuit 150 is formed on the epitaxial layer 130. Thereafter, an interlayer insulating layer 160 and a wiring 170 are formed on the epitaxial layer 130.

Thereafter, the lower side of the first substrate 100 is first removed by backgrinding, and an ion implantation layer 105 is formed on the lower side of the remaining first substrate 100 by ion implantation to form the first substrate 100. The lower side of) can be removed.

According to the second embodiment, in addition to the effects of the first embodiment, after the wiring process, the lower side of the first substrate may be removed by backgrinding, and the ion implantation and cleaving process may be performed.

Further, according to the second embodiment

The present invention is not limited to the described embodiments and drawings, and various other embodiments are possible within the scope of the claims.

1 is a process cross-sectional view of a rear light receiving image sensor according to the prior art.

2 is a cross-sectional view of the rear light-receiving image sensor according to the embodiment.

3 to 8 are process cross-sectional views of a method of manufacturing a back-receiving image sensor according to a first embodiment.

9 is a process cross-sectional view of a method of manufacturing a back-receiving image sensor according to a second embodiment;

Claims (18)

An optical sensing unit formed on a front side of the first substrate including the device isolation region and the pixel region; An epitaxial layer formed on an entire surface of the first substrate on which the light sensing unit is formed; A lead-out circuit formed on the entire epi layer; An interlayer insulating layer and wiring formed on the entire surface of the epi layer; And a microlens formed on the light sensing unit on the back side of the first substrate. The method of claim 1, wherein The light sensing unit And a back light receiving image sensor formed over the entire pixel area except the device isolation area of the first substrate. The method of claim 1, wherein The readout circuit is And a rear light receiving image sensor formed on an upper surface of the entire epitaxial layer. The method of claim 1, wherein The readout circuit is And a rear light receiving image sensor formed on an inner surface of the entire epi layer. The method of claim 1, wherein And a color filter formed between the rear surface of the first substrate and the microlens. The method of claim 1, wherein The readout circuit, A conductive connection region connected to the light sensing unit and formed in the epi layer; A conductive well connected to the conductive connection region and formed on an entire surface of the epi layer; And a transistor formed on a front surface of the epi layer on one side of the conductive well. Forming an ion implantation layer as a whole on the front side of the first substrate including the device isolation region and the pixel region; Forming a light sensing unit in the pixel region of the first substrate on which the ion implantation layer is formed; Forming an epitaxial layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Removing the lower side of the first substrate based on the ion implantation layer; And And forming a microlens on the light sensing unit on the back side of the first substrate. Forming a light sensing unit on a front side of the first substrate including the device isolation region and the pixel region; Forming an ion implantation layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming an epitaxial layer on an entire surface of the first substrate; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Removing the lower side of the first substrate based on the ion implantation layer; And And forming a microlens on the light sensing unit on the back side of the first substrate. Forming a light sensing unit on a front side of the first substrate including the device isolation region and the pixel region; Forming an epitaxial layer on an entire surface of the first substrate on which the light sensing unit is formed; Forming a lead-out circuit on the entire epitaxial layer; Forming an interlayer insulating layer and wiring on the entire surface of the epi layer; Firstly removing the lower side of the first substrate by backlining; Forming an ion-carrying layer as a whole on the rear surface of the first substrate exposed by the primary removal; Secondly removing a lower side of the first substrate based on the ion implantation layer; And And forming a microlens on the light sensing unit on the back side of the first substrate. The method according to any one of claims 7 to 9, The light sensing unit The manufacturing method of the back light receiving image sensor, characterized in that formed on the entire pixel region except the device isolation region of the first substrate. The method according to any one of claims 7 to 9, Forming the readout circuit, Forming a conductive connection region in the epi layer by being connected to the light sensing unit; Forming a conductive well on the entire surface of the epi layer by being connected to the conductive connection region; And forming a transistor on the entire surface of the epi layer on one side of the conductive well. The method according to any one of claims 7 to 9, The readout circuit is The method of manufacturing a back-receiving image sensor, characterized in that formed on the inner surface or the upper surface of the entire epi layer. The method according to any one of claims 7 to 9, Forming the ion implantation layer is A method for manufacturing a back-receiving image sensor comprising forming an ion implantation layer through hydrogen ion implantation or helium ion implantation. The method according to any one of claims 7 to 8, Forming the ion implantation layer is A method for manufacturing a back-receiving image sensor, characterized in that to form an ion implantation layer by performing ion implantation through the front surface of the first substrate. The method according to any one of claims 7 to 9, Removing the lower side of the first substrate based on the ion implantation layer, And removing a lower side of the first substrate through heat treatment to the ion implantation layer. The method according to any one of claims 7 to 9, After removing the lower side of the first substrate, And forming a color filter on the rear surface of the first substrate. The method according to any one of claims 7 to 8, Forming the ion implantation layer is A method of manufacturing a back-receiving image sensor, characterized in that to form an ion implantation layer as a whole at a constant depth on the front surface of the first substrate. The method according to any one of claims 7 to 9, The removing of the lower side of the first substrate may include removing the opposite side of the front side of the first substrate based on the ion implantation layer.

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