KR20100016886A - Ceramic probe card and manufacturing method thereof - Google Patents

Abstract

PURPOSE: A ceramic probe card and a manufacturing method thereof are provided to improve accuracy of a position of a via electrode by forming a via bonding pad on the via electrode included in a plurality of welded ceramic block and bonding a plurality of ceramic blocks. CONSTITUTION: Ceramic blocks(11, 12, 13, 14, 15) laminated with at least one of ceramic green sheet including the via electrode are prepared. The plurality of ceramic blocks takes the plasticity. A via bonding pad(30) is formed on the via electrode located on one side of the ceramic block which faces each other among the plurality of ceramic blocks. An elasticity junction layer(40) is formed on a portion on which the via bonding pad is not formed among the ceramic block on which the via bonding pad is formed. The plurality of ceramic blocks is welded. A probe pad(50) is formed on the via electrode exposed among the plurality of welded ceramic block.

Description

Ceramic probe card and manufacturing method thereof

The present invention relates to a ceramic probe card and a method of manufacturing the same, and more particularly, to a ceramic probe card including a plurality of ceramic blocks subjected to low temperature baking treatment and a method of manufacturing the same.

A general semiconductor test apparatus includes a tester, a performance board, a probe card, a chuck, and a prober, and includes chips of chips manufactured on a wafer. Test the electrical characteristics. The probe card of the semiconductor test apparatus receives a signal generated by the tester through the performance board and transmits the signal to the pads of the chip in the wafer, and transmits signals output from the pads of the chip through the performance board. Deliver the tester.

The conventional probe card uses a ceramic substrate subjected to high temperature co-firing. Specifically, a ceramic substrate manufactured by a method of forming and stacking an electrical signal pattern and a via electrode on a ceramic green sheet, and baking at high temperature was used as a probe card. In this case, the position of the via electrode is changed as the ceramic green sheet shrinks during the firing process.

1 is a view showing a probe pad forming surface of a conventional ceramic probe card. Referring to FIG. 1, a probe pad 1 having a predetermined pattern is formed on a surface layer surface of a ceramic probe card. However, as the position of the via electrode 2 is changed during the firing process, a portion in which the probe pad 1 and the via electrode 2 are not bonded to each other is generated, thereby lowering the manufacturing yield of the ceramic prod card. In this case, the via electrode 2 has a diameter of 0.2 to 1.2 mm, and considering the change of position of the via electrode 2, the probe pad 1 should have a diameter of at least 0.4 mm so as to produce a probe card. Now you can implement about 10%. Accordingly, it was difficult to reduce the size of the probe pad 1 and to integrate it.

In order to solve such a problem, a low-temperature firing ceramic probe card using a non-shrinkage method was manufactured. However, even when the non-shrinkage method is used, when the ceramic green sheet for manufacturing the ceramic probe card has a thickness of 1.5 mm or more, there is a problem that shrinkage occurs in the plane direction and the position of the via electrode is changed.

The present invention is to solve the above problems, an object of the present invention is to form a via bonding pad on a via electrode included in a plurality of ceramic blocks subjected to low temperature firing to bond a plurality of ceramic blocks, thereby To provide a ceramic probe card and a method of manufacturing the same that can improve the position accuracy of the.

In addition, another object of the present invention, by forming an elastic bonding layer around the via bonding pad formed in the plurality of ceramic blocks, a ceramic that can prevent the formation of a gap (gap) between the plurality of ceramic blocks at the time of bonding It is to provide a probe card and a method of manufacturing the same.

According to an aspect of the present invention, there is provided a method of manufacturing a ceramic probe card, the method comprising: providing a plurality of ceramic blocks including at least one ceramic green sheet including a via electrode; Firing a ceramic block, matching via electrode positions between the plurality of fired ceramic blocks, and forming a via bonding pad on a via electrode located on one surface of the ceramic block facing each other among the plurality of ceramic blocks Forming an elastic bonding layer on a portion of the ceramic block on which the via bonding pads are not formed, in which the via bonding pads are not formed, bonding the plurality of ceramic blocks, and forming the outermost layer of the bonded ceramic blocks. Forming a probe pad on the via electrode exposed to the substrate; And forming a lobe tip.

In this case, the firing of the plurality of ceramic blocks may include forming a restraint layer on both surfaces of each of the plurality of ceramic blocks that are not baked at the firing temperatures of the plurality of ceramic blocks, and the plurality of ceramics on which the restraint layer is formed. Firing the blocks separately and removing the constraint layer on the calcined plurality of ceramic blocks. In addition, each of the plurality of ceramic blocks preferably has a thickness of 1.5 mm or less.

The joining of the plurality of ceramic blocks may be performed using any one of a welding bonding method, a brazing bonding method, and a soldering bonding method.

In the present invention, the via bonding pad includes Au-Sn, and the elastic bonding layer may include an epoxy resin.

On the other hand, the method of manufacturing a ceramic probe card according to an embodiment of the present invention, a plurality of ceramic blocks including at least one ceramic green sheet including a via electrode, formed between the plurality of ceramic blocks and facing each other A ceramic substrate including a via bonding pad formed on a via electrode of a ceramic block and an elastic bonding layer formed between the plurality of ceramic blocks and formed in a portion where the via bonding pad is not formed, the outermost layer via electrode of the ceramic substrate; And contact probe pads formed at regular intervals, and probe probes formed on the probe pads.

In this case, each of the ceramic blocks included in the ceramic substrate may have a thickness of 1.5 mm or less.

In addition, the via bonding pad may include Au—Sn, and the elastic bonding layer may include an epoxy resin.

According to the present invention, a plurality of ceramic blocks are baked at a low temperature using a non-shrinkage method, and a via bonding pad is formed on a via electrode included in the plurality of fired ceramic blocks to bond the plurality of ceramic blocks to form a ceramic probe card. To prepare. Accordingly, the positional accuracy of the via electrodes included in the plurality of ceramic blocks may be improved to reduce the area of the probe pad. In addition, by reducing the area of the probe pad, it is possible to reduce the spacing between the probe pads to achieve high integration.

In addition, when bonding a plurality of ceramic blocks, a gap is formed between the plurality of bonded ceramic blocks by forming a bonding material on the via electrode and applying an elastic material to a portion of the plurality of ceramic blocks where the bonding material is not formed. Formation can be prevented. Accordingly, by improving the bonding between the plurality of ceramic blocks it is possible to improve the product reliability of the ceramic probe card.

Hereinafter, with reference to the accompanying drawings will be described in detail the present invention.

2A to 2H are views for explaining a method of manufacturing a ceramic probe card according to an embodiment of the present invention. First, as shown in FIG. 2A, a plurality of ceramic blocks is provided. Specifically, the first ceramic block 11, the second ceramic block 12, the third ceramic block 13, the fourth ceramic block 14, and the fifth ceramic block 15 are provided. Each ceramic block includes first and second ceramic green sheets, and the first and second ceramic green sheets include via electrodes and electrical signal patterns. That is, the first ceramic block 11 includes the first and second ceramic green sheets 11a and 11b, the via electrode 11c, and the electrical signal pattern 11d, and the second ceramic block 12 includes the first And second ceramic green sheets 12a and 12b, via electrodes 12c, and an electrical signal pattern 12d. In addition, the third ceramic block 13 may include first and second ceramic green sheets 13a and 13b, a via electrode 13c, and an electrical signal pattern 13d, and the fourth ceramic block 14 may include a first ceramic block 13d. And second ceramic green sheets 14a and 14b, via electrodes 14c, and electrical signal patterns 14d. The fifth ceramic block 15 includes first and second ceramic green sheets 15a and 15b, a via electrode 15c, and an electrical signal pattern 15d. In this case, each of the first to fifth ceramic blocks 11-15 may be manufactured to a thickness of 1.5 mm or less.

In FIG. 2A, the first to fifth ceramic blocks 11-15 are illustrated and described as being composed of two green sheets, but the number of the green sheets constituting the first to fifth ceramic blocks 11-15 is 3. May be dogs or more.

On the other hand, as shown in Figure 2b, on the upper and lower surfaces of the first to fifth ceramic blocks (11-15), not sintered at the firing temperature of the first to fifth ceramic blocks (11-15). Non-constraining layers 20a, 20b. In this case, the firing temperature of the first to fifth ceramic blocks 11-15 is about 700 to 900 占 폚, and the firing temperature of the restraining layers 20a and 20b is preferably about 1000 占 폚 or more. Examples of the material satisfying such conditions may include alumina (Al ₂ O ₃ ), zirconia (ZrO ₂ ), and the like.

Thereafter, the first to fifth ceramic blocks 11-15 on which the constraint layers 20a and 20b are formed are fired at a temperature of about 700 to 900 ° C. In this case, the shrinkage of the first to fifth ceramic blocks 11-15 is suppressed in the plane direction by the restraint layers 20a and 20b, and shrinkage occurs in the thickness direction. Since the first to fifth ceramic blocks 11-15 of the present invention are manufactured to a thickness of 1.5 mm or less, the positions of the via electrodes and the electrical signal patterns of the respective ceramic blocks are not greatly changed even when they are contracted during the firing process. In addition, the calcined first to fifth ceramic blocks 11-15 may have a thickness of about 1.0 mm due to shrinkage in the thickness direction during the calcining process.

Next, as shown in FIG. 2C, when the firing of the first to fifth ceramic blocks 11-15 is completed, the restraining layers 20a and 20b are removed. In addition, when the constraint layers 20a and 20b are removed, polishing may be performed to reduce surface roughness of the via electrodes exposed through the surfaces of the first to fifth ceramic blocks 11-15. The polished via electrode can then be Ni / Au plated.

Thereafter, the via electrode positions between the first to fifth ceramic blocks 11-15 are matched and aligned. Specifically, as indicated by the dotted line, the via electrode 12c of the second ceramic block 12 is matched to the via electrode 11c of the first ceramic block 11, and the via electrode of the second ceramic block 12 is matched. The via electrode 13c of the third ceramic block 13 is matched to 12c. The via electrode 14c of the fourth ceramic block 14 is matched to the via electrode 13c of the third ceramic block 13, and the fifth ceramic is connected to the via electrode 14c of the fourth ceramic block 14. The via electrode 15c of the block 15 is matched.

In the same manner as described above, after matching and aligning via electrode positions between the ceramic blocks, as shown in FIG. 2D, a via bonding pad (on the via electrodes included in any one of the ceramic blocks facing each other) 30). Specifically, the via bonding pads 30 are formed on the upper via electrode 12c of the second ceramic block 12 facing the first ceramic block 11, and the second ceramic block 12 faces the second ceramic block 12. The via bonding pads 30 may be formed on the upper via electrode 13c of the three ceramic blocks 13. In addition, a via bond pad 30 may be formed on the upper via electrode 14c of the fourth ceramic block 14 facing the third ceramic block 13, and may face the fourth ceramic block 14. The via bonding pads 30 may be formed on the upper via electrode 15c of the fifth ceramic block 15.

On the other hand, the via bonding pad 30 functions to bond via electrode portions of the ceramic blocks facing each other when the first to fifth ceramic blocks 11-15 are bonded to each other. To this end, the via bonding pads 30 may be formed by applying a bonding material comprising a metal onto the via electrodes using a solder ball method or a printing method. A bonding material applicable to the present invention may be Au-Sn. In this case, Au-Sn may have a composition ratio of 7: 3. In addition, the via bonding pads 30 may be formed by adjusting height or area differently according to the size (eg, area) of the via electrodes 11c, 12c, 13c, 14c, and 15c.

As shown in FIG. 2E, the elastic bonding layer 40 is formed on any one of the ceramic blocks facing each other. In this case, the elastic bonding layer 40 may be formed at a position where the via bonding pads 30 are not formed in the ceramic block, and may be formed at a height corresponding to the via bonding pads 30. Specifically, the elastic bonding layer 40 is formed in a portion of the second ceramic block 12 facing the first ceramic block 11 where the via bonding pads 30 are not formed. In addition, the elastic bonding layer 40 is formed in a portion where the via bonding pads 30 are not formed in each of the third to fifth ceramic blocks 13-15 facing the second to fourth ceramic blocks 12-14. To form.

In this case, when the elastic bonding layer 40 bonds the first to fifth ceramic blocks 11-15, the first to fifth ceramic blocks 11-15 may be formed by the height of the via bonding pad 30. It serves to prevent a gap from forming. To this end, the elastic bonding layer 40 may be formed by printing a bonding material having adhesiveness and elasticity on a portion where the via bonding pad 30 is not formed in order to bond and protect the ceramic blocks facing each other. In this case, the bonding material having both adhesiveness and elasticity may be an epoxy resin.

Meanwhile, in addition to the method of printing an epoxy resin after the via bonding pad 30 is formed on the ceramic block, the elastic bonding layer 40 may include the first to fifth ceramic blocks (see FIG. 2F). After bonding 11-15, a method of injecting and forming a bonding material through a gap formed between the first to fifth ceramic blocks 11-15 may be used.

Meanwhile, as shown in FIG. 2F, the first to fifth ceramic blocks 11-15 are bonded to form a ceramic substrate. In this case, the first to fifth ceramic blocks 11-15 are bonded by the via bonding pads 30 and the elastic bonding layer 40, and are welded, brazed and soldered. ) Can be made through any one of the joining method. However, it is preferable to use a brazing joining method among these. Specifically, in the welding bonding method, deformation of the ceramic blocks and the via electrode may be performed after the bonding of the plurality of ceramic blocks. In addition, the soldering joining method is inferior in joining strength to other joining methods. Therefore, in the bonding process of the ceramic block, it is preferable to use a brazing bonding method which is excellent in the strength, high temperature resistance, corrosion resistance, and washability of the bonding without damaging the ceramic block and the via electrode. In this case, the brazing bonding method may be performed at a low temperature of about 300 ° C.

Meanwhile, when bonding the first to fifth ceramic blocks 11-15, the via bonding pad 30 and the elastic bonding layer 40 are formed on one surface of the second to fifth ceramic blocks 12-15. Will form. Accordingly, the surfaces of the first to fifth ceramic blocks 11-15 that face each other may be bonded to each other, thereby increasing the bonding strength between the ceramic blocks that face each other.

In addition, the first to fifth ceramic blocks 11-15 are each manufactured to have a thickness of 1.5 mm, so that the deformation of the via electrodes is reduced by non-shrink firing. Accordingly, the ceramic substrate formed by bonding the first to fifth ceramic blocks 11-15 may improve the position accuracy of the via electrode.

Thereafter, as illustrated in FIG. 2G, the probe pad 50 is formed on the first ceramic block 11. In this case, when the plurality of probe pads 50 having a predetermined pattern is formed up, down, left, and right according to the positional accuracy of the via electrode, the via electrode may be positioned in the probe pad 50 area. Accordingly, poor connection between the probe pad 50 and the via electrode can be reduced, thereby increasing the manufacturing yield of the ceramic probe card.

Next, as illustrated in FIG. 2H, the ceramic probe card 100 may be manufactured by forming the test probe 60 on the probe pad 50. As shown in FIG. 2H, the ceramic probe card 100 manufactured by the method may include vias formed between the first to fifth ceramic blocks 11-15 and the first to fifth ceramic blocks 11 to 15. The bonding pad 30 and the elastic bonding layer 40, the probe pad 50 and the test probe 60 located on the first ceramic block 11 is formed in the form. In this case, each of the first to fifth ceramic blocks 11-15 has a thickness of 1.5 mm or less, but the ceramic probe card 100 formed by joining them has a thickness of 5 mm or more. Accordingly, the positional accuracy of the via electrode can be improved to reduce a poor connection with the probe pad, and the ceramic probe card 100 having a large area and a thickness can be manufactured.

3A and 3B are diagrams illustrating a probe pad forming surface of the ceramic probe card of the present invention. 3A is a view showing a probe pad generally used in the ceramic probe card manufactured by the present invention. Referring to FIG. 3A, a probe pad 50 is formed on the surface layer 11a of the ceramic probe card, and a via electrode 11c is formed under the probe pad 50. In this case, the via electrode 11c has a diameter of about 0.2 to 1.2 mm and is located in the region of the probe pad 40 having a diameter of 0.4 mm. As such, as the positional accuracy of the via electrode 11c is improved, the via electrode 11c does not leave the area of the probe pad 40. Thus, the production yield of the ceramic probe card is increased.

3B is a view in which a highly integrated probe pad is formed on a ceramic probe card manufactured by the present invention. Referring to FIG. 3B, the probe pad 220 is formed on the surface of the ceramic probe card. Compared with the probe pad 50 shown in FIG. 3A, the probe pad 220 is reduced in size, and is disposed up, down, left, and right. It can be seen that the distance from the probe pad 220 is reduced. That is, it can be seen that the probe pad 220 is highly integrated. This is due to improved positional accuracy of the via electrode 210. Even when the probe pad 220 having a smaller size than that shown in FIG. 3A is used, the via electrode 210 and the probe pad 220 can be easily connected. Become.

While the above has been shown and described with respect to preferred embodiments of the invention, the invention is not limited to the specific embodiments described above, it is usually in the technical field to which the invention belongs without departing from the spirit of the invention claimed in the claims. Various modifications may be made by those skilled in the art, and these modifications should not be individually understood from the technical spirit or the prospect of the present invention.

1 is a view showing a probe pad forming surface of a conventional ceramic probe card,

2A to 2H are views for explaining a method of manufacturing a ceramic probe card according to an embodiment of the present invention, and

3A and 3B are diagrams illustrating a probe pad forming surface of the ceramic probe card of the present invention.

Claims (10)

Providing a plurality of ceramic blocks including at least one ceramic green sheet including via electrodes; Firing the plurality of ceramic blocks; Matching via electrode positions between the fired plurality of ceramic blocks; Forming a via bond pad on a via electrode positioned on one surface of the ceramic block facing each other among the plurality of ceramic blocks; Forming an elastic bonding layer on a portion of the ceramic block on which the via bonding pad is formed, on which the via bonding pad is not formed; Bonding the plurality of ceramic blocks; Forming a probe pad on a via electrode exposed to an outermost layer of the plurality of bonded ceramic blocks; And, Forming a probe probe on the probe pad; Method of manufacturing a ceramic probe card comprising. The method of claim 1, Firing the plurality of ceramic blocks, Forming a restraining layer on both sides of each of the plurality of ceramic blocks that is not baked at the firing temperatures of the plurality of ceramic blocks; Individually firing a plurality of ceramic blocks on which the constraint layer is formed; And, Removing the restriction layer on the fired plurality of ceramic blocks. The method of claim 1, Wherein each of the plurality of ceramic blocks has a thickness of 1.5 mm or less. The method of claim 1, Joining the plurality of ceramic blocks, A method of manufacturing a ceramic probe card, characterized in that performed using any one of a welding bonding method, a brazing bonding method, and a soldering bonding method. The method of claim 1, The via bonding pad includes Au-Sn. The method of claim 1, The elastic bonding layer comprises an epoxy resin, the manufacturing method of a ceramic probe card. A plurality of ceramic blocks including at least one ceramic green sheet including a via electrode, a via bonding pad formed between the plurality of ceramic blocks and via electrodes of the ceramic blocks facing each other, and the plurality of ceramic blocks A ceramic substrate formed on the ceramic substrate, the ceramic substrate including an elastic bonding layer formed on a portion where the via bonding pad is not formed; Probe pads contacting the outermost layer via electrodes of the ceramic substrate and formed at regular intervals; And, And a probe probe formed on the probe pad. The method of claim 7, wherein And each of the plurality of ceramic blocks included in the ceramic substrate has a thickness of 1.5 mm or less. The method of claim 7, wherein The via bonding pad includes Au-Sn. The method of claim 7, wherein The elastic bonding layer, the ceramic probe card, characterized in that containing an epoxy resin.

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