KR20100013900A - Method and apparatus for febrication of thin film transistor - Google Patents

Method and apparatus for febrication of thin film transistor Download PDF

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Publication number
KR20100013900A
KR20100013900A KR1020080075640A KR20080075640A KR20100013900A KR 20100013900 A KR20100013900 A KR 20100013900A KR 1020080075640 A KR1020080075640 A KR 1020080075640A KR 20080075640 A KR20080075640 A KR 20080075640A KR 20100013900 A KR20100013900 A KR 20100013900A
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South Korea
Prior art keywords
ohmic contact
contact layer
laser
electrode
gantry
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KR1020080075640A
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Korean (ko)
Inventor
이형섭
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제이에스라이팅 주식회사
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Priority to KR1020080075640A priority Critical patent/KR20100013900A/en
Priority to TW098126001A priority patent/TWI484563B/en
Priority to US13/056,970 priority patent/US8278127B2/en
Priority to DE112009001874T priority patent/DE112009001874T5/en
Priority to PCT/KR2009/004320 priority patent/WO2010013984A2/en
Priority to CN2009801387593A priority patent/CN102177462A/en
Publication of KR20100013900A publication Critical patent/KR20100013900A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

The present invention relates to a method and apparatus for manufacturing a thin film transistor which can reduce process time and prevent damage to a semiconductor layer by patterning an ohmic contact layer through a laser patterning process. The manufacturing method of forming a gate electrode on a substrate; Forming an insulating film on the substrate to include the gate electrode; Forming a semiconductor layer on the insulating film corresponding to the gate electrode; Forming an ohmic contact layer on the semiconductor layer; Forming an electrode material on the ohmic contact layer; Patterning the electrode material to form source and drain electrodes spaced at predetermined intervals on the ohmic contact layer; Removing the ohmic contact layer exposed between the source electrode and the drain electrode using a laser; Forming a protective film on the substrate to include the source electrode and the drain electrode; Forming a contact hole in the passivation layer to expose the source electrode or the drain electrode; And forming a pixel electrode on the passivation layer to be electrically connected to the electrode exposed through the contact hole.

Description

TECHNICAL FIELD AND APPARATUS FOR METHOD OF MANUFACTURING THIN FILM TRENDER

The present invention relates to a method and a manufacturing apparatus of a thin film transistor, and more particularly, to manufacture a thin film transistor which can reduce process time and reduce process time by patterning an ohmic contact layer through a laser patterning process. It relates to a method and a manufacturing apparatus.

In general, a thin film transistor is used as a switching element for controlling the operation of each pixel or a driving element for driving a pixel in a flat panel display such as a liquid crystal display or a light emitting display.

The thin film transistor includes a gate electrode, a semiconductor layer formed to be insulated from the gate electrode, a source electrode and a drain electrode formed to have a channel region on the semiconductor layer, and a pixel electrode electrically connected to the source electrode or the drain electrode.

In addition, the conventional thin film transistor further forms an ohmic contact layer (n + a-Si) between the semiconductor layer and the source / drain electrodes in order to increase the electrical conductivity between the semiconductor layer (a-Si) and the source / drain electrodes. In this case, when the ohmic contact layer is connected between the source / drain electrodes, the ohmic contact layer serves as a conductor so that the thin film transistor is not driven. Accordingly, in the conventional thin film transistor fabrication process, after the source electrode and the drain electrode are patterned using a wet etching process, a dry etching process is performed between the source electrode and the drain electrode (the channel region of the thin film transistor). ) To remove the ohmic contact layer. In this dry etching process, the source electrode and the drain electrode serve as a mask for etching the ohmic contact layer.

However, in the conventional thin film transistor, since the ohmic contact layer is selectively etched by the dry etching process, only the ohmic contact layer cannot be etched accurately, resulting in overetching, which causes damage to the semiconductor layer.

Therefore, the conventional thin film transistor manufacturing process has a problem that the manufacturing yield of the thin film transistor is reduced due to damage of the semiconductor layer generated by the patterning process of the ohmic contact layer.

In addition, in the conventional thin film transistor manufacturing process, since the ohmic contact layer is selectively etched by the dry etching process, the process time is very long, and thus there is a problem in that the productivity is lowered.

The present invention is to solve the above-described problems, to provide a method and apparatus for manufacturing a thin film transistor that can reduce the process time and at the same time to prevent damage to the semiconductor layer by patterning the ohmic contact layer through a laser patterning process. Let it be technical problem.

Method of manufacturing a thin film transistor of the present invention for achieving the above technical problem comprises the steps of forming a gate electrode on a substrate; Forming an insulating film on the substrate to include the gate electrode; Forming a semiconductor layer on the insulating film corresponding to the gate electrode; Forming an ohmic contact layer on the semiconductor layer; Forming an electrode material on the ohmic contact layer; Patterning the electrode material to form source and drain electrodes spaced at predetermined intervals on the ohmic contact layer; Removing the ohmic contact layer exposed between the source electrode and the drain electrode using a laser; Forming a protective film on the substrate to include the source electrode and the drain electrode; Forming a contact hole in the passivation layer to expose the source electrode or the drain electrode; And forming a pixel electrode on the passivation layer to be electrically connected to the electrode exposed through the contact hole.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor, the method including: mounting a substrate including an ohmic contact layer exposed between a source electrode and a drain electrode on a stage; And removing the ohmic contact layer by irradiating the ohmic contact layer with a laser beam from a laser irradiation device arranged on the stage.

And transferring at least one of the stage and the laser irradiation device such that the laser is irradiated onto the ohmic contact layer.

The ohmic contact layer exposed between the source electrode and the drain electrode is removed by the laser at least once.

The ohmic contact layer exposed between the source electrode and the drain electrode is set to have a decreasing power step by step and is removed step by step by the irradiated laser.

An apparatus for manufacturing a thin film transistor of the present invention for achieving the above technical problem is a base frame; A stage disposed on the base frame, the substrate including an ohmic contact layer exposed between a source electrode and a drain electrode; A gantry portion disposed on the base frame; And at least one laser irradiator installed on the gantry to remove the ohmic contact layer by irradiating a laser onto the ohmic contact layer.

The laser irradiation device is characterized in that to irradiate the laser at least once to the ohmic contact layer.

The laser irradiation apparatus may irradiate the ohmic contact layer with the laser, which is set to have a gradually decreasing power, to remove the ohmic contact layer step by step.

A first gantry installed at both edges of the base frame; And at least one second installed in the first gantry to be transported in the first horizontal direction by the driving of the first gantry and to convey the at least laser irradiation device in a second horizontal direction perpendicular to the first horizontal direction. Characterized in that comprises a gantry.

The at least one laser irradiation device is installed at the at least one second gantry at regular intervals to correspond to at least two divided regions of the substrate to irradiate the laser to the ohmic contact layer formed in the divided region. do.

As described above, the present invention provides the following effects.

First, by patterning only the ohmic contact layer exposed between the source electrode and the drain electrode using a laser, it is possible to prevent damage to the semiconductor layer and to reduce the process time.

Second, there is an effect that can improve the manufacturing yield of the thin film transistor by preventing damage to the semiconductor layer pattern.

Third, by only patterning the ohmic contact layer exposed between the source electrode and the drain electrode using a plurality of laser irradiation apparatus, it is possible to prevent damage to the semiconductor layer and to greatly reduce the process time.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1A to 1H are diagrams for explaining a method of manufacturing a thin film transistor of the present invention step by step.

1A to 1H, the thin film transistor manufacturing method of the present invention will be described step by step as follows.

First, as shown in FIG. 1A, a gate electrode 110 is formed on a substrate 100. Here, the substrate 100 is a transparent material such as glass, or a plastic material including polyethylene terephthalate (PET), polyethylenenaphthelate (PEN), polypropylene (PP), polyamide (PI), triacetyl cellulose (TAC), and the like. It may be prepared, and preferably has a glass material.

The gate electrode 110 may be formed of copper (Cu), copper alloy (Cu Alloy), aluminum (Al), aluminum alloy (AlNd: Aluminum Neodymium), molybdenum (Mo), molybdenum alloy, chromium (Cr), chromium alloy, It may have a single layer or a multilayer structure formed of at least one metal material of titanium (Ti), titanium alloy, silver (Ag), and silver alloy. In this case, the gate electrode 110 may be formed on the entire surface of the substrate 100 by a metal material deposition process such as a sputtering process, and then patterned and formed by a photolithography process. In addition, the gate electrode 110 may be formed only by a printing process without a deposition process of a metal material such as a sputtering process.

Subsequently, as illustrated in FIG. 1B, the gate insulating layer 120 is formed on the entire surface of the substrate 100 to include the gate electrode 110. In this case, the gate insulating layer 120 may be an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

Subsequently, as shown in FIG. 1C, the semiconductor layer 130 and the ohmic contact layer 140 are sequentially formed on the gate insulating layer 120 corresponding to the gate electrode 110. In this case, the semiconductor layer 130 and the ohmic contact layer 140 are formed on the entire surface of the gate insulating film 120 through a PECVD (Plasma Enhanced Chemical Vapor Deposition) process, and then patterned or patterned sequentially by a photolithography process. Can be formed.

Subsequently, as shown in FIG. 1D, the source electrode 160 and the drain electrode 150 are formed on the ohmic contact layer 140 to be in contact with the semiconductor layer 130 and the ohmic contact layer 140. . In this case, the source electrode 160 and the drain electrode 150 may be formed of any one metal material of molybdenum (Mo), nickel (Ni), chromium (Cr), and tungsten (W). The source electrode 160 and the drain electrode 150 may be formed on the entire surface of the substrate 100 by a metal material deposition process such as a sputtering process, and then patterned and formed by a photolithography process. In addition, each of the source electrode 160 and the drain electrode 150 may be formed only by a printing process.

Subsequently, as shown in FIG. 1E, at least one of the ohmic contact layer 140 exposed between the source electrode 160 and the drain electrode 150 (the channel region of the thin film transistor) using the laser irradiation apparatus 200. Irradiation of the meeting laser 210 removes only the ohmic contact layer 140 exposed between the source electrode 160 and the drain electrode 150. In this case, since the laser 210 has excellent selectivity for selectively removing a single layer according to power, only the ohmic contact layer 140 is removed without damaging the semiconductor layer 130. Such a laser 210 is a YLF laser using a solid containing Nd3 + in a YLiF4 (YLF) crystal using a solid as a medium, or an Nd: YAG laser having an infrared wavelength of 1064 nm may be used. , An HF laser which is an excimer laser using a gaseous medium, and the like may be used.

Meanwhile, in order to prevent damage to the semiconductor layer 130 when the ohmic contact layer 140 is removed, the laser irradiation apparatus 200 irradiates the ohmic contact layer 140 with the laser 210 several times. The layer 140 may be removed, and in this case, the power of the laser 210 may be set to be gradually lowered closer to the semiconductor layer 130.

Subsequently, as shown in FIG. 1F, the passivation layer 170 is formed on the entire surface of the substrate 100 including the source electrode 160 and the drain electrode 150. In this case, the passivation layer 170 may be formed of any one of silicon nitride (SiNx), silicon oxide (SiOx), benzocyclobutene (BCB), and an acrylic resin.

Subsequently, as illustrated in FIG. 1G, a contact hole 180 is formed in the passivation layer 170 to expose a portion of the source electrode 160. In this case, the contact hole 180 may be formed by a photolithography process.

Finally, as illustrated in FIG. 1H, the pixel electrode 190 electrically connected to the source electrode 160 through the contact hole 180 is formed on the passivation layer 170. In this case, the pixel electrode 190 may be formed of a transparent conductive material such as indium tin oxide (ITO), indium zinc oxide (IZO), AZO, or ZnO. The pixel electrode 190 may be formed on the entire surface of the substrate 100 including the passivation layer 170 and then patterned by a photolithography process.

Such a method of manufacturing a thin film transistor according to the present invention removes only the ohmic contact layer 140 between the source electrode 160 and the drain electrode 150 using the laser 210 in the process of removing the ohmic contact layer 140. As a result, the semiconductor layer 130 may be prevented from being damaged. Accordingly, the method of manufacturing a thin film transistor according to the present invention can prevent a decrease in yield due to damage to the semiconductor layer 130 and can reduce process time.

2 is a perspective view illustrating a thin film transistor manufacturing apparatus according to a first embodiment of the present invention.

2, the thin film transistor manufacturing apparatus according to the first embodiment of the present invention includes a base frame 300; Stage 310; A gantry 400; And a laser irradiation apparatus 200.

The base frame 300 supports the stage 310, and a drive / control device (not shown) for driving or controlling each of the stage 310, the gantry 400, and the laser irradiation apparatus 200 is provided therein. Can be installed.

The stage 310 is mounted with a substrate 100 conveyed by an external substrate transport apparatus (not shown). At this time, the substrate transfer device is a stage 310 after the source electrode 160 and the drain electrode 150 is formed through the above-described manufacturing process of Figure 1a to 1d, the cleaning process and the drying process is completed Load with.

Meanwhile, the stage 310 may further include a lift pin (not shown) for loading / unloading the substrate 100, and a plurality of vacuum pads (not shown) for vacuum suction of the seated substrate 100. Hours) may be formed. In addition, the stage 310 may be moved in the X-axis and Y-axis directions by the driving / control device.

The gantry 400 may include a first gantry 410 installed on the base frame 300; And a second gantry 420 installed in the first gantry 410 to transfer the laser irradiation apparatus 200 in the X-axis direction.

The first gantry 410 transfers the second gantry 420 in the Y-axis direction by using an LM guide or a linear motor. To this end, the first gantry 410 may include a pair of first guiders 410a and 410b installed side by side at both edges of the base frame 300; And a pair of first sliders 410c and 410d installed in the first guiders 410a and 410b, respectively.

The second gantry 420 is moved in the Y-axis direction as the first gantry 410 is driven, and the second gantry 420 is moved in the X-axis direction using an LM guide or a linear motor. To this end, the second gantry 420 may include a second guider 420a coupled between the first sliders 410c and 410d of the first gantry 410; And a second slider 420b installed in the second guider 420a.

The laser irradiation apparatus 200 is installed in the second slider 420b and is moved in the Y-axis direction along with the movement of the pair of first sliders 410c and 410d according to the driving of the first gantry 410, and the second slider 420b. As the second slider 420b is driven by the gantry 420, the gantry 420 is transferred in the X-axis direction. The laser irradiation apparatus 200 is irradiated with the laser 210 on the substrate 100 while being transferred in the X-axis and Y-axis directions by the driving of the gantry 400, so that the source electrode 160 and Only the ohmic contact layer 140 exposed between the drain electrodes 150 is patterned. Here, the laser 210 is a YLF laser using a solid containing Nd3 + in a YLiF4 (YLF) crystal using a solid as a medium, or an Nd: YAG laser having an infrared wavelength of 1064 nm may be used, and a gaseous medium. HF laser and the like which is an excimer laser can be used.

Meanwhile, in order to prevent damage to the semiconductor layer 130 when the ohmic contact layer 140 is removed, the laser irradiation apparatus 200 irradiates the ohmic contact layer 140 with the laser 210 several times. The layer 140 may be removed, and in this case, the power of the laser 210 may be set to be gradually lowered closer to the semiconductor layer 130.

As described above, the thin film transistor manufacturing apparatus according to the first exemplary embodiment of the present invention irradiates the laser 210 to the substrate 100 while transporting the laser irradiation apparatus 200 using the gantry 400, thereby providing the substrate 100. By patterning only the ohmic contact layer on the phase, damage to the semiconductor layer can be prevented and process time can be reduced.

Meanwhile, in the above-described thin film transistor manufacturing apparatus according to the first embodiment of the present invention, the laser irradiation apparatus 200 has been described as being transferred. However, the present invention is not limited thereto. Only the ohmic contact layer may be transferred to pattern the ohmic contact layer, and the ohmic contact layer may be patterned by simultaneously transferring the laser irradiation apparatus 200 and the stage 310.

3 is a view for explaining a thin film transistor manufacturing apparatus according to a second embodiment of the present invention.

Referring to FIG. 3, a thin film transistor manufacturing apparatus according to a second embodiment of the present invention may include a base frame 300; Stage 310; Gantry 400; And a plurality of laser irradiation apparatuses 200. The thin film transistor manufacturing apparatus having such a configuration has the same configuration as the manufacturing apparatus of the first embodiment described above, except that a plurality of laser irradiation apparatuses 200 are installed in the gantry 400 to further reduce the process time. . Accordingly, the description of the second embodiment will be described only the configuration different from the first embodiment, and the description of the same configuration will be replaced with the above description.

First, in order to configure the plurality of laser irradiation apparatuses 200, the gantry 400 includes a plurality of second sliders 420b installed at regular intervals on the second guider 420a. The plurality of second sliders 420b are transferred in the X-axis direction by using an LM guide or a linear motor.

Each of the plurality of laser irradiation apparatuses 200 is installed at each of the plurality of second sliders 420b to be transferred at equal intervals according to the transfer of the second sliders 420b, and the laser 210 is applied to the divided area on the substrate 100. By irradiating, only the ohmic contact layer on the substrate 100 is patterned. In this case, the substrate 100 may be divided into at least two divided regions according to the number of laser irradiation apparatuses 200. Accordingly, the plurality of laser irradiation apparatuses 200 are installed so as to correspond to the divided regions and pattern only the ohmic contact layers formed in the divided regions.

As described above, the thin film transistor manufacturing apparatus according to the second exemplary embodiment of the present invention irradiates the laser 210 to the substrate 100 while transferring the plurality of laser irradiation apparatuses 200 by using the gantry 400. By patterning only the ohmic contact layer on 100), it is possible to prevent damage to the semiconductor layer and further reduce the process time.

Meanwhile, in the above-described thin film transistor manufacturing apparatus according to the second embodiment of the present invention, the plurality of laser irradiation apparatuses 200 are described as being transported, but not limited thereto, and the positions of the plurality of laser irradiation apparatuses 200 are fixed. The ohmic contact layer may be patterned by transferring only the stage 310, or the ohmic contact layer may be patterned by simultaneously transferring the plurality of laser irradiation apparatuses 200 and the stage 310.

4 is a view for explaining a thin film transistor manufacturing apparatus according to a third embodiment of the present invention.

Referring to FIG. 4, in the thin film transistor manufacturing apparatus according to the third exemplary embodiment, a plurality of laser irradiation apparatuses 200 may be installed along the Y and X axes in order to further reduce the process time. Accordingly, the description of the third embodiment will be described only the configuration different from the first embodiment, and the description of the same configuration will be replaced with the above description.

The gantry 400 may include a first gantry 410 installed on the base frame 300; And a plurality of second gantry 420 installed at the first gantry 410 at regular intervals to transfer the plurality of laser irradiation apparatuses 200 in the X-axis direction.

The first gantry 410 transfers the second gantry 420 in the Y-axis direction by using an LM guide or a linear motor. To this end, the first gantry 410 may include a pair of first guiders 410a and 410b installed side by side at both edges of the base frame 300; And a plurality of first sliders 410c and 410d installed at each of the first guiders 410a and 410b at regular intervals.

The plurality of second gantry 420 is transported in the Y-axis direction as the first gantry 410 is driven, and the laser irradiation device 200 is transported in the X-axis direction using an LM guide or a linear motor. To this end, the plurality of second gantry 420 may include a plurality of second guiders 420a respectively installed between the pair of first sliders 410c and 410d; And a plurality of second sliders 420b installed at each of the second guiders 420a at regular intervals.

Each of the plurality of laser irradiation apparatuses 200 is installed in each of the plurality of second sliders 420b and transferred in the Y-axis direction according to the movement of the first sliders 410c and 410d according to the driving of the first gantry 410. In addition, according to the movement of the second slider 420b according to the driving of the second gantry 420 is transferred in the X-axis direction. Each of the plurality of laser irradiation apparatuses 200 is irradiated with the laser 210 to the divided region on the substrate 100 while being transferred in the X-axis and Y-axis directions to have the same distance according to the driving of the gantry 400. Only the ohmic contact layer on the substrate 100 is patterned. In this case, the substrate 100 may be divided into at least nine divided regions according to the number of laser irradiation apparatuses 200. Accordingly, the plurality of laser irradiation apparatuses 200 are installed so as to correspond to the divided region and pattern only the ohmic contact layer formed in the divided region.

As described above, the thin film transistor manufacturing apparatus according to the second exemplary embodiment of the present invention irradiates the laser 210 to the substrate 100 while transferring the plurality of laser irradiation apparatuses 200 by using the gantry 400. By patterning only the ohmic contact layer on 100), damage to the semiconductor layer can be prevented and the process time can be greatly reduced.

Meanwhile, in the above-described thin film transistor manufacturing apparatus according to the third embodiment of the present invention, the plurality of laser irradiation apparatuses 200 are described as being transferred. However, the present invention is not limited thereto, and the positions of the plurality of laser irradiation apparatuses 200 are fixed. The ohmic contact layer may be patterned by transferring only the stage 310, or the ohmic contact layer may be patterned by simultaneously transferring the plurality of laser irradiation apparatuses 200 and the stage 310.

Those skilled in the art to which the present invention pertains will understand that the present invention can be implemented in other specific forms without changing the technical spirit or essential features. Therefore, it is to be understood that the embodiments described above are exemplary in all respects and not restrictive. The scope of the present invention is shown by the following claims rather than the detailed description, and all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts should be construed as being included in the scope of the present invention. do.

1A to 1H are diagrams for explaining a method of manufacturing a thin film transistor according to an exemplary embodiment of the present invention.

2 is a perspective view for explaining a thin film transistor manufacturing apparatus according to a first embodiment of the present invention.

3 is a perspective view for explaining a thin film transistor manufacturing apparatus according to a second embodiment of the present invention.

4 is a perspective view for explaining a thin film transistor manufacturing apparatus according to a third embodiment of the present invention.

<Explanation of Signs of Major Parts of Drawings>

100 substrate 110 gate electrode

120: gate insulating film 130: semiconductor layer

140: ohmic contact layer 150: drain electrode

160: source electrode 170: protective film

180: contact hole 190: pixel electrode

200: laser irradiation device 210: laser

400: gantry part 410: first gantry

410a, 410b: first guider 410c, 410d: first slider

420: second gantry 420a: second guider

420b: second slider

Claims (10)

Forming a gate electrode on the substrate; Forming an insulating film on the substrate to include the gate electrode; Forming a semiconductor layer on the insulating film corresponding to the gate electrode; Forming an ohmic contact layer on the semiconductor layer; Forming an electrode material on the ohmic contact layer; Patterning the electrode material to form source and drain electrodes spaced at predetermined intervals on the ohmic contact layer; Removing the ohmic contact layer exposed between the source electrode and the drain electrode using a laser; Forming a protective film on the substrate to include the source electrode and the drain electrode; Forming a contact hole in the passivation layer to expose the source electrode or the drain electrode; And And forming a pixel electrode on the passivation layer so as to be electrically connected to the electrode exposed through the contact hole. Mounting a substrate on the stage, the substrate comprising an ohmic contact layer exposed between the source electrode and the drain electrode; And And irradiating the ohmic contact layer with a laser beam from a laser irradiation device arranged on the stage, to remove the ohmic contact layer. The method of claim 2, And transporting at least one of the stage and the laser irradiation device such that the laser is irradiated onto the ohmic contact layer. The method according to any one of claims 1 to 3, The ohmic contact layer exposed between the source electrode and the drain electrode is removed by the laser at least once. The method according to any one of claims 1 to 3, And the ohmic contact layer exposed between the source electrode and the drain electrode is gradually removed by the laser irradiated and set to have a stepwise decreasing power. Base frame; A stage disposed on the base frame, the substrate including an ohmic contact layer exposed between a source electrode and a drain electrode; A gantry portion disposed on the base frame; And And at least one laser irradiator installed on the gantry to remove the ohmic contact layer by irradiating a laser onto the ohmic contact layer. The method of claim 6, And the laser irradiator irradiates the laser to the ohmic contact layer at least once. The method of claim 6, And the laser irradiating apparatus irradiates the ohmic contact layer with the laser set to have a stepwise decreasing power to remove the ohmic contact layer stepwise. The method of claim 6, The gantry portion, First gantry installed at both edges of the base frame; And At least one second gantry installed in the first gantry to be transported in the first horizontal direction by the driving of the first gantry and to convey the at least laser irradiation device in a second horizontal direction perpendicular to the first horizontal direction Apparatus for manufacturing a thin film transistor, characterized in that comprising a. The method of claim 9, The at least one laser irradiation device is installed at the at least one second gantry at regular intervals to correspond to at least two divided regions of the substrate to irradiate the laser to the ohmic contact layer formed in the divided region. An apparatus for manufacturing a thin film transistor.
KR1020080075640A 2008-08-01 2008-08-01 Method and apparatus for febrication of thin film transistor KR20100013900A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
KR1020080075640A KR20100013900A (en) 2008-08-01 2008-08-01 Method and apparatus for febrication of thin film transistor
TW098126001A TWI484563B (en) 2008-08-01 2009-07-31 Method and apparatus for fabricating thin film transistor
US13/056,970 US8278127B2 (en) 2008-08-01 2009-08-03 Method for manufacturing a thin-film transistor using a laser
DE112009001874T DE112009001874T5 (en) 2008-08-01 2009-08-03 Method and device for producing a thin-film transistor
PCT/KR2009/004320 WO2010013984A2 (en) 2008-08-01 2009-08-03 Method and apparatus for manufacturing thin-film transistor
CN2009801387593A CN102177462A (en) 2008-08-01 2009-08-03 Method and apparatus for manufacturing thin-film transistor

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