CN107799466B - TFT substrate and manufacturing method thereof - Google Patents

TFT substrate and manufacturing method thereof Download PDF

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Publication number
CN107799466B
CN107799466B CN201711140087.2A CN201711140087A CN107799466B CN 107799466 B CN107799466 B CN 107799466B CN 201711140087 A CN201711140087 A CN 201711140087A CN 107799466 B CN107799466 B CN 107799466B
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film
tft
photoresist layer
layer
transparent conductive
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CN107799466A (en
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徐洪远
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Shenzhen China Star Optoelectronics Semiconductor Display Technology Co Ltd
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Priority to CN201711140087.2A priority Critical patent/CN107799466B/en
Priority to KR1020207015934A priority patent/KR102318054B1/en
Priority to PCT/CN2017/116283 priority patent/WO2019095482A1/en
Priority to US15/743,918 priority patent/US10784287B2/en
Priority to JP2020520000A priority patent/JP6899487B2/en
Priority to EP17932520.4A priority patent/EP3712931A4/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
    • H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
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    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]

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  • Nonlinear Science (AREA)
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  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Liquid Crystal (AREA)

Abstract

The invention provides a TFT substrate and a manufacturing method thereof. The manufacturing method of the TFT substrate comprises the steps of continuously depositing a metal film and a transparent conductive film on a TFT; coating a light resistor on the transparent conductive film, and exposing and developing the light resistor by using a half-tone mask plate to obtain a first light resistor layer and a second light resistor layer; then etching the transparent conductive film and the metal film which are not covered by the first photoresist layer and the second photoresist layer; then, ashing the first photoresist layer and the second photoresist layer to remove the second photoresist layer; etching the exposed transparent conductive film to expose the metal film uncovered by the residual first photoresist layer; then carrying out oxidation treatment on the exposed metal film to form an insulated metal oxide film as a passivation layer; finally, the residual first light resistance layer is stripped, and the metal film and the transparent conductive film covered by the residual first light resistance layer are exposed to be used as pixel electrodes; the number of the light shield can be reduced, and the manufacturing cost can be saved.

Description

TFT substrate and manufacturing method thereof
Technical Field
The invention relates to the technical field of display, in particular to a TFT substrate and a manufacturing method thereof.
Background
The flat display device has many advantages such as thin body, power saving, no radiation, etc., and is widely used. The conventional flat panel Display devices mainly include Liquid Crystal Displays (LCDs) and Organic Light Emitting Displays (OLEDs).
Most of the existing liquid crystal displays in the market are Backlight type liquid crystal displays, which include a housing, a liquid crystal panel disposed in the housing, and a Backlight Module (Backlight Module) disposed in the housing. The liquid crystal panel is composed of a Color Filter (CF) Substrate, a Thin Film Transistor (TFT) Array Substrate, and a liquid crystal Layer (liquid crystal Layer) disposed between the two substrates, and operates by applying a driving voltage to the two substrates to control the rotation of liquid crystal molecules in the liquid crystal Layer, and refract light from the backlight module to generate a picture.
The organic electroluminescent display also requires a TFT substrate, and TFTs are used as a switching element and a driving element, and pixel structures arranged in an array are fabricated on the TFT substrate.
A technology of taking an Oxide semiconductor such as Indium Gallium Zinc Oxide (IGZO) as a channel layer of the TFT is a current hot gate technology. The oxide semiconductor has higher carrier mobility, can greatly improve the charge and discharge rate of a TFT to a pixel electrode and realize a faster refresh rate, and has higher compatibility with an amorphous silicon manufacturing process, so the oxide semiconductor gradually becomes a preferred material for a channel layer of the TFT in an LCD and an OLED.
In the TFT substrate, the material of each insulating layer (e.g., gate insulating layer, passivation layer, etc.) generally adopts a laminated structure of silicon oxide (SiOx) and silicon nitride (SiNx), and the gas for etching SiOx generally adopts tetrafluoromethane (CF)4) Such gases tend to form compounds on the surface of metals, such as copper (Cu), which affect the electrical contact characteristics of the metal surface. In order to solve the problem, when a TFT substrate is manufactured, a via hole required by a TFT gate and a via hole required by a TFT source/drain electrode are usually etched separately, that is, a hole is formed in a gate insulating layer and a hole is formed in a passivation layer, a pixel electrode is manufactured on the passivation layer, the hole is formed in the gate insulating layer by using one photomask, the hole is formed in the passivation layer by using another photomask, and a patterned pixel electrode is manufactured by using another photomask. Therefore, the whole process of the TFT substrate needs more light covers and has higher manufacturing cost.
Disclosure of Invention
The invention aims to provide a manufacturing method of a TFT substrate, which can reduce the number of photomasks required by a manufacturing process, save the manufacturing cost and improve the productivity.
Another objective of the present invention is to provide a TFT substrate with low manufacturing cost and high productivity.
In order to achieve the above object, the present invention first provides a method for manufacturing a TFT substrate, comprising the steps of:
step S1, providing a substrate, and manufacturing TFTs arranged in an array on the substrate;
step S2, continuously depositing a layer of metal film and a layer of transparent conductive film on all TFTs;
step S3, coating a photoresist on the transparent conductive film, exposing and developing the photoresist by using a half-tone photomask, and patterning the photoresist to obtain a first photoresist layer and a second photoresist layer, wherein the thickness of the first photoresist layer is greater than that of the second photoresist layer;
the pattern of the first photoresist layer is consistent with the pattern of a pixel electrode to be formed, and the part of the drain electrode of the TFT far away from the source electrode is covered by the first photoresist layer; the rest part of the drain electrode, the source electrode and the channel layer of the TFT are covered by the second photoresist layer;
step S4, etching the transparent conductive film and the metal film uncovered by the first photoresist layer and the second photoresist layer;
step S5, performing ashing treatment on the first photoresist layer and the second photoresist layer to remove the second photoresist layer and reduce the thickness of the first photoresist layer;
step S6, etching the exposed transparent conductive film to expose the metal film uncovered by the residual first photoresist layer;
step S7, oxidizing the exposed metal film to form an insulated metal oxide film as a passivation layer;
step S8, stripping the remaining first photoresist layer to expose the metal film and the transparent conductive film covered by the remaining first photoresist layer as pixel electrodes;
the pixel electrode contacts a portion of the drain electrode of the TFT remote from the source electrode.
The metal film is made of aluminum, molybdenum or titanium; the metal oxide film formed in step S7 is an aluminum oxide film, a molybdenum oxide film, or a titanium oxide film.
The transparent conductive film is made of indium tin oxide.
The thickness of the metal film is less than 50 nm.
The TFT is an oxide semiconductor TFT.
The step S7 performs an oxidation process on the exposed metal thin film using oxygen plasma.
The present invention also provides a TFT substrate, comprising: the pixel structure comprises a substrate, TFTs (thin film transistors) arranged on the substrate in an array manner, and a passivation layer and a pixel electrode which are arranged on the TFTs;
the pixel electrode comprises a metal film and a transparent conductive film laminated on the metal film, and the metal film in the pixel electrode contacts the part of the drain electrode, far away from the source electrode, of the TFT;
the passivation layer covers the remaining portion of the drain electrode, the source electrode and the channel layer of the TFT, and is an insulating metal oxide thin film integrated with a metal thin film in the pixel electrode.
The material of the metal film in the pixel electrode is aluminum, molybdenum or titanium; the passivation layer is an aluminum oxide film, a molybdenum oxide film or a titanium oxide film; the transparent conductive film in the pixel electrode is made of indium tin oxide.
The thickness of the metal film in the pixel electrode is less than 50 nm.
The TFT is an oxide semiconductor TFT.
The invention has the beneficial effects that: according to the manufacturing method of the TFT substrate, the passivation layer and the pixel electrode can be manufactured by using the half-tone photomask, and compared with the prior art, the number of photomasks required by the manufacturing process can be reduced, so that the manufacturing cost is saved, the manufacturing procedures are reduced, and the productivity is improved. The TFT substrate provided by the invention has the advantages that the pixel electrode is formed by the metal film and the transparent conductive film laminated on the metal film, the passivation layer is the insulated metal oxide film integrated with the metal film in the pixel electrode, and the TFT substrate can be manufactured by the manufacturing method of the TFT substrate, so the manufacturing cost is lower, and the productivity is higher.
Drawings
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
In the drawings, there is shown in the drawings,
FIG. 1 is a flow chart of a method of fabricating a TFT substrate according to the present invention;
FIG. 2 is a schematic view of step S1 of the method for fabricating a TFT substrate according to the present invention;
FIG. 3 is a schematic view of step S2 of the method for fabricating a TFT substrate according to the present invention;
FIG. 4 is a schematic view of step S3 of the method for fabricating a TFT substrate according to the present invention;
FIG. 5 is a schematic view of step S4 of the method for fabricating a TFT substrate according to the present invention;
FIG. 6 is a schematic view of step S5 of the method for fabricating a TFT substrate according to the present invention;
FIG. 7 is a schematic view of step S6 of the method for fabricating a TFT substrate according to the present invention;
fig. 8 is a schematic view of step S7 of the method for fabricating a TFT substrate according to the present invention;
fig. 9 is a schematic diagram of step S8 of the method for manufacturing the TFT substrate of the present invention and a structural schematic diagram of the TFT substrate of the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Referring to fig. 1, the present invention first provides a method for manufacturing a TFT substrate, which includes the following steps:
step S1, please refer to fig. 2, providing a substrate 1, and fabricating TFTs 10 arranged in an array on the substrate 1.
Specifically, the method comprises the following steps:
the substrate 1 is preferably a glass substrate.
The TFT 10 may be a Back Channel (BCE) TFT or an etch barrier (ESL) TFT. Taking a BCE-type TFT as an example, as shown in fig. 2, the TFT 10 includes a gate 104 disposed on a substrate 1, a gate insulating layer 105 covering the gate 104 and the substrate 1, a channel layer 103 disposed on the gate insulating layer 105 above the gate 104, and a source 102 and a drain 101 disposed on the gate insulating layer 105 and respectively contacting two sides of the channel layer 103, which is different from the prior art; the TFT 10 can be fabricated by conventional processes, which are not described herein.
Further, the TFT 10 is preferably an Oxide semiconductor TFT, that is, the material of the channel layer 103 of the TFT 10 is Indium Gallium Zinc Oxide (IGZO) or other suitable Oxide.
In step S2, referring to fig. 3, a metal film 2 and a transparent conductive film 3 are successively deposited on all TFTs 10.
Specifically, the method comprises the following steps:
the material of the metal thin film 2 is preferably aluminum (Al), molybdenum (Mo) or titanium (Ti); in order to contribute to the light transmission property of the finally formed pixel electrode, the thickness of the metal thin film 2 is preferably less than 50 nm.
The material of the transparent conductive film 3 is preferably Indium Tin Oxide (ITO).
Step S3, please refer to fig. 4, a photoresist is coated on the transparent conductive film 3, and a HalfTone Mask (HalfTone Mask) is used to expose the photoresist, so that the intensities of light received by the photoresist in different areas are different, so as to pattern the photoresist, and after the development, the first photoresist layer 41 and the second photoresist layer 42 are obtained, and the thickness of the first photoresist layer 41 is greater than that of the second photoresist layer 42.
The pattern of the first photoresist layer 41 is consistent with the pattern of the pixel electrode to be formed, and the part of the drain electrode 101 of the TFT 10 far away from the source electrode 102 is covered by the first photoresist layer 41; the remaining portion of the drain 101, the source 102 and the channel layer 103 of the TFT 10 are covered by the second photoresist layer 42.
In step S4, please refer to fig. 5, the transparent conductive film 3 and the metal film 2 not covered by the first photoresist layer 41 and the second photoresist layer 42 are etched by using the etching solution.
In step S5, referring to fig. 6, ashing (Ash) is performed on the first photoresist layer 41 and the second photoresist layer 42 to remove the second photoresist layer 42 and reduce the thickness of the first photoresist layer 41.
In step S6, please refer to fig. 7, the exposed transparent conductive film 3 is etched by using the etching solution to expose the metal film 2 uncovered by the remaining first photoresist layer 41.
Step S7, please refer to FIG. 8, using oxygen plasma (O)2Plasma) oxidizing the exposed metal film 2 to form an insulating metal oxide film, such as aluminum oxide (AlO)X) Film, molybdenum oxide (MoO)X) Film or titanium oxide (TiO)X) Film(s)Etc. as the passivation layer 20.
In step S8, please refer to fig. 9, the remaining first photoresist layer 41 is stripped, and the metal film 2 and the transparent conductive film 3 covered by the remaining first photoresist layer 41 are exposed as the pixel electrode 30.
The pixel electrode 30 contacts a portion of the drain 101 of the TFT 10 remote from the source 102.
According to the manufacturing method of the TFT substrate, the passivation layer 20 and the pixel electrode 30 can be manufactured by using a half-tone photomask, the passivation layer 20 is manufactured by oxidizing the metal film integrated with the metal film 2 in the pixel electrode 30, holes do not need to be dug in the passivation layer 20, and the pixel electrode 30 is directly contacted with the part, far away from the source electrode 102, of the drain electrode 101 of the TFT 10.
Referring to fig. 9, the present invention further provides a TFT substrate manufactured by the method for manufacturing a TFT substrate, including: the pixel structure comprises a substrate base plate 1, TFTs 10 arranged on the substrate base plate 1 in an array mode, and passivation layers 20 and pixel electrodes 30 arranged on the TFTs 10.
The pixel electrode 30 includes a metal film 2 and a transparent conductive film 3 laminated on the metal film 2, and the metal film 2 in the pixel electrode 30 contacts a portion of the drain 101 of the TFT 10 away from the source 102.
The passivation layer 20 covers the remaining portion of the drain electrode 101, the source electrode 102, and the channel layer 103 of the TFT 10, and the passivation layer 20 is an insulating metal oxide thin film integrated with the metal thin film 2 in the pixel electrode 30.
Specifically, the method comprises the following steps:
the substrate 1 is preferably a glass substrate.
The structural form of the TFT 10 is not limited, and may be a BCE-type TFT, or an ESL-type TFT. Taking a BCE-type TFT as an example, as shown in fig. 9, the TFT 10 includes a gate electrode 104 disposed on a substrate 1, a gate insulating layer 105 covering the gate electrode 104 and the substrate 1, a channel layer 103 disposed on the gate insulating layer 105 above the gate electrode 104, and a source electrode 102 and a drain electrode 101 disposed on the gate insulating layer 105 and contacting both sides of the channel layer 103, respectively, unlike the prior art. Further, the TFT 10 is preferably an oxide semiconductor TFT, i.e., the material of the channel layer 103 of the TFT 10 is IGZO or other suitable oxide.
The material of the metal thin film 2 in the pixel electrode 30 is preferably Al, Mo or Ti, and the thickness of the metal thin film 2 is preferably less than 50 nm.
The material of the transparent conductive film 3 in the pixel electrode 30 is preferably ITO.
The passivation layer 20 is preferably AlOXFilm, MoOXFilm or TiOXA film.
The TFT substrate of the invention, which is composed of the metal film 2 and the transparent conductive film 3 laminated on the metal film 2 to form the pixel electrode 30, and the passivation layer 20 is the insulated metal oxide film integrated with the metal film 2 in the pixel electrode 30, can be manufactured by the manufacturing method of the TFT substrate, so the manufacturing cost is lower and the productivity is higher.
In summary, the method for fabricating the TFT substrate of the present invention can fabricate the passivation layer and the pixel electrode by using a halftone mask, and compared with the prior art, the method can reduce the number of masks required for the fabrication process, thereby saving the fabrication cost, reducing the fabrication processes, and improving the throughput. The TFT substrate of the invention comprises the pixel electrode which is composed of the metal film and the transparent conductive film laminated on the metal film, and the passivation layer is the insulated metal oxide film which is integrated with the metal film in the pixel electrode.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications should fall within the scope of the claims of the present invention.

Claims (10)

1. A manufacturing method of a TFT substrate is characterized by comprising the following steps:
step S1, providing a substrate (1), and manufacturing TFTs (10) arranged in an array on the substrate (1);
step S2, continuously depositing a layer of metal film (2) and a layer of transparent conductive film (3) on all TFTs (10);
step S3, coating a photoresist on the transparent conductive film (3), exposing and developing the photoresist by using a half-tone photomask, and patterning the photoresist to obtain a first photoresist layer (41) and a second photoresist layer (42), wherein the thickness of the first photoresist layer (41) is greater than that of the second photoresist layer (42);
the pattern of the first photoresist layer (41) is consistent with the pattern of a pixel electrode to be formed, and the part of the drain electrode (101) of the TFT (10) far away from the source electrode (102) is covered by the first photoresist layer (41); the rest part of the drain electrode (101), the source electrode (102) and the channel layer (103) of the TFT (10) are covered by the second photoresist layer (42);
step S4, etching the transparent conductive film (3) and the metal film (2) which are not covered by the first photoresist layer (41) and the second photoresist layer (42);
step S5, performing ashing treatment on the first photoresist layer (41) and the second photoresist layer (42), removing the second photoresist layer (42), and reducing the thickness of the first photoresist layer (41);
step S6, etching the exposed transparent conductive film (3) to expose the metal film (2) uncovered by the remaining first photoresist layer (41);
step S7, oxidizing the exposed metal film (2) to form an insulated metal oxide film as a passivation layer (20);
step S8, stripping the remaining first photoresist layer (41) to expose the metal film (2) and the transparent conductive film (3) covered by the remaining first photoresist layer (41) as the pixel electrode (30);
the pixel electrode (30) contacts a portion of the drain electrode (101) of the TFT (10) remote from the source electrode (102).
2. The method of manufacturing a TFT substrate according to claim 1, wherein the metal thin film (2) is made of aluminum, molybdenum, or titanium; the metal oxide film formed in step S7 is an aluminum oxide film, a molybdenum oxide film, or a titanium oxide film.
3. The method of manufacturing a TFT substrate as claimed in claim 1, wherein the transparent conductive film (3) is made of indium tin oxide.
4. The method of fabricating a TFT substrate as claimed in claim 1, wherein the metal thin film (2) has a thickness of less than 50 nm.
5. The method of fabricating a TFT substrate as claimed in claim 1, wherein the TFT (10) is an oxide semiconductor TFT.
6. The method of manufacturing a TFT substrate as set forth in claim 1, wherein the step S7 performs oxidation treatment on the exposed metal thin film (2) using oxygen plasma.
7. A TFT substrate, comprising: the pixel structure comprises a substrate base plate (1), TFTs (10) arranged on the substrate base plate (1) in an array manner, a passivation layer (20) arranged on the TFTs (10), and pixel electrodes (30);
the pixel electrode (30) comprises a metal film (2) and a transparent conductive film (3) laminated on the metal film (2), and the metal film (2) in the pixel electrode (30) contacts the part of the drain electrode (101) of the TFT (10) far away from the source electrode (102);
the passivation layer (20) covers the rest of the drain electrode (101), the source electrode (102) and the channel layer (103) of the TFT (10), and the passivation layer (20) is an insulating metal oxide thin film integrated with the metal thin film (2) in the pixel electrode (30);
the pixel electrode (30) is directly connected with the drain electrode (101), and a via hole for connecting the pixel electrode (30) and the drain electrode (101) is not arranged in the passivation layer (20).
8. The TFT substrate according to claim 7, wherein the material of the metal thin film (2) in the pixel electrode (30) is aluminum, molybdenum, or titanium; the passivation layer (20) is an aluminum oxide film, a molybdenum oxide film or a titanium oxide film; the transparent conductive film (3) in the pixel electrode (30) is made of indium tin oxide.
9. The TFT substrate according to claim 7, wherein the metal thin film (2) in the pixel electrode (30) has a thickness of less than 50 nm.
10. The TFT substrate according to claim 7, wherein the TFT (10) is an oxide semiconductor TFT.
CN201711140087.2A 2017-11-16 2017-11-16 TFT substrate and manufacturing method thereof Expired - Fee Related CN107799466B (en)

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