KR101494152B1 - Method and apparatus for febrication of thin film transistor array substrate - Google Patents

Abstract

The present invention relates to a method and apparatus for manufacturing a thin film transistor array substrate capable of preventing a change in electrical characteristics of an oxide semiconductor, simplifying a manufacturing process of a thin film transistor array substrate, and reducing a process time, A method of manufacturing an array substrate includes the steps of forming a gate pattern using a laser scribing process; A step of forming an oxide semiconductor pattern; Forming a data pattern; And a step of forming a conductive pattern.

Thin film transistor array, laser beam, oxide semiconductor, scribing

Description

TECHNICAL FIELD [0001] The present invention relates to a method of manufacturing a thin film transistor array substrate,

The present invention relates to a method and an apparatus for manufacturing a thin film transistor array substrate, and more particularly, to a method for manufacturing a thin film transistor array substrate, which prevents variation in electrical characteristics of an oxide semiconductor, simplifies a manufacturing process of a thin film transistor array substrate, And more particularly, to a method and apparatus for manufacturing a thin film transistor array substrate.

2. Description of the Related Art Generally, a thin film transistor (TFT) array substrate includes a switching element for controlling the operation of each pixel or a thin film transistor for driving pixels in a flat panel display device such as a liquid crystal display device or a light emitting display device.

In recent years, thin film transistors using oxide semiconductors driven at low temperature and low voltage have been used.

The thin film transistor using the oxide semiconductor includes a gate electrode, a semiconductor formed to be insulated from the gate electrode, a source electrode and a drain electrode formed to have a channel region on the semiconductor, and a pixel electrode electrically connected to the source electrode.

The manufacturing process of the thin film transistor array substrate using the thin film transistor includes a photolithography process.

However, the photolithography process includes a photoresist coating process, a drying process, an exposure process, a development process, a heat treatment process, and an etching process.

In addition, a zinc oxide (ZnO) based thin film is deposited and patterned to form an oxide semiconductor pattern in a manufacturing process of a thin film transistor array substrate using a conventional oxide semiconductor. At this time, since the zinc oxide based thin film has a property of being not etched by the dry etching method, the oxide semiconductor pattern is formed by patterning the thin film of the zinc oxide based on the wet etching method.

However, the thin film of zinc oxide has a problem that electrical characteristics are changed by moisture when wet etching is performed. That is, the wet etching can be masked by the photoresist, but the etching surface is exposed to moisture, thereby changing electrical characteristics. In addition, selective wet etching must be patterned through a photolithography process.

Therefore, the conventional method of manufacturing a thin film transistor array substrate using an oxide semiconductor has the following problems.

First, the manufacturing process is complicated and the process time is long due to the patterning process using the photolithography process.

Second, there is a problem that the electric characteristics of the oxide semiconductor are changed by the wet etching process.

The present invention has been made to solve the above-mentioned problems, and it is an object of the present invention to provide a thin film transistor array substrate manufacturing method capable of preventing change in electrical characteristics of an oxide semiconductor, simplifying a manufacturing process of a thin film transistor array substrate, And a manufacturing apparatus.

According to an aspect of the present invention, there is provided a method of manufacturing a thin film transistor array substrate, including: forming a gate material on a front surface of a substrate; A first patterning step of patterning the gate material to form a gate pattern including a gate wiring, a gate electrode pattern and a gate pad electrode pattern; Forming a gate insulating film on a front surface of the substrate on which the gate pattern is formed; Forming an oxide semiconductor material on the gate insulating layer; A second patterning step of patterning the oxide semiconductor material to form an oxide semiconductor pattern on the gate electrode; Forming a data material on the entire surface of the substrate on which the oxide semiconductor pattern is formed; A third patterning step of patterning the data material to form a data wiring, a data pad electrode pattern, and a source electrode pattern and a drain electrode pattern spaced on the oxide semiconductor pattern; And forming a protective layer on the entire surface of the substrate on which the source electrode pattern and the drain electrode pattern are formed, wherein at least one of the first through third patterning steps is a laser scribing process using a laser beam To form the pattern.

The oxide semiconductor material is characterized in that zinc oxide (ZnO) is doped with one of gallium (Ga), indium (In), boron (B), and aluminum (Al).

The method of fabricating the thin film transistor array substrate includes forming a conductive material on the protective film; A fourth patterning step of patterning the conductive material to form a pixel electrode pattern, a gate pad pattern, and a data pad pattern; And a second energizing step of electrically connecting the gate pad pattern and the gate pad electrode pattern and a second energizing step of electrically connecting the data pad pattern and the data pad electrode pattern to each other electrically And at least one of the fourth patterning step and the energizing step includes forming the pattern through a laser scribing process using a laser beam .

The manufacturing method of the thin film transistor array substrate may include forming a first contact hole for exposing the source electrode pattern on the protective film, a second contact hole for exposing the gate pad electrode pattern, and a second contact hole for exposing the data pad electrode pattern 3 forming a contact hole; Forming a conductive material on the passivation layer on which the first to third contact holes are formed; And a gate pad pattern connected to the gate pad electrode pattern through the second contact hole and a gate pad pattern connected to the source electrode through the first contact hole, And a fourth patterning step of forming a data pad pattern connected to the data pad electrode pattern, wherein at least one of the contact hole forming step and the fourth patterning step is a laser scriber using a laser beam, And the pattern is formed through a glazing process.

Wherein at least one of the first to fourth patterning steps includes a first step of forming a pattern on the substrate by using a first laser beam of a first width generated by the at least one first laser beam irradiating device Patterning the material and using a second laser beam having a width larger than a first width generated by the at least one second laser beam irradiating device to irradiate the second region of the second region except for the first region where no pattern is formed on the substrate And removing the substance.

According to an aspect of the present invention, there is provided an apparatus for fabricating a thin film transistor array substrate, including: a gate material formation unit for forming a gate material on a front surface of a substrate; A gate pattern forming part for patterning the gate material to form a gate pattern including a gate wiring, a gate electrode pattern and a gate pad electrode pattern; A gate insulating layer forming unit forming a gate insulating layer on a front surface of the substrate on which the gate pattern is formed; A semiconductor material forming part for forming an oxide semiconductor material on the gate insulating film; A semiconductor pattern forming part for patterning the oxide semiconductor material to form an oxide semiconductor pattern on the gate electrode; A data material forming unit for forming a data material on the entire surface of the substrate on which the oxide semiconductor pattern is formed; A data pattern forming unit for patterning the data material to form a data pattern including a data wiring and a data pad electrode pattern and a source electrode pattern and a drain electrode pattern separated on the oxide semiconductor pattern; And a protective film forming unit forming a protective film on the entire surface of the substrate on which the source electrode pattern and the drain electrode pattern are formed. The oxide semiconductor pattern forming portion; And at least one of the data pattern forming units forms the pattern through a laser scribing process using a laser beam.

The apparatus for fabricating a thin film transistor array substrate includes: a conductive material forming unit for forming a conductive material on the protective film; A conductive material pattern forming unit for patterning the conductive material to form a pixel electrode pattern, a gate pad pattern, and a data pad pattern; And a second energizing step of electrically connecting the gate pad pattern and the gate pad electrode pattern and a second energizing step of electrically connecting the data pad pattern and the data pad electrode pattern to each other electrically And at least one of the conductive material pattern forming portion and the conductive paste forming portion forms the pattern through a laser scribing process using a laser beam, do.

The apparatus for fabricating a thin film transistor array substrate includes a first contact hole for exposing the source electrode pattern on the protective film, a second contact hole for exposing the gate pad electrode pattern, and a second contact hole for exposing the data pad electrode pattern A contact hole forming portion for forming three contact holes; A conductive material forming portion for forming a conductive material on the protective film on which the first to third contact holes are formed; A pixel electrode pattern connected to the source electrode through a first contact hole by patterning the conductive material, a gate pad pattern connected to the gate pad electrode pattern through the second contact hole, Wherein at least one of the contact hole forming portion and the conductive pattern forming portion comprises a laser scribing process using a laser beam, and a conductive pattern forming portion for forming a data pad pattern connected to the data pad electrode pattern, To form the pattern.

The gate pattern forming portion; The oxide semiconductor pattern forming portion; The data pattern forming unit; And at least one of the conductive material pattern forming units is patterned by using a first laser beam of a first width generated by at least one first laser beam irradiating device to pattern the material of a first region in which a pattern is to be formed on the substrate A second laser beam having a width larger than a first width generated by the at least one second laser beam irradiating device is used to remove a material of a second region other than a first region where no pattern is formed on the substrate .

As described above, the present invention has the following effects.

First, at least one patterning process among the patterning process of the thin film transistor array substrate is performed using the laser scribing process, thereby simplifying the manufacturing process and reducing the manufacturing process time.

Secondly, the oxide semiconductor pattern is formed by using the laser scribing process, thereby preventing the change of the electrical characteristics of the oxide semiconductor pattern.

Thirdly, there is an effect that the yield of the thin film transistor can be improved by preventing the change of the electrical characteristics of the oxide semiconductor pattern.

Fourth, a process of energizing the source electrode pattern and the pixel electrode pattern using at least one laser beam, a process of energizing the gate pad electrode pattern and the gate pad pattern, and a process of energizing the data pad electrode pattern and the data pad pattern are performed The power application process can be simplified and the process time can be reduced.

Fifth, a first contact hole for conducting a source electrode pattern and a pixel electrode pattern using at least one laser beam, a second contact hole for conducting a gate pad electrode pattern and a gate pad pattern, By forming the third contact hole for energizing the pad pattern on the protective film, the contact hole forming process can be simplified and the process time can be reduced.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

FIG. 1 is a plan view for explaining a thin film transistor array substrate according to an embodiment of the present invention, and FIGS. 2 (a) to 2 (p) are sectional views for explaining a method of manufacturing a thin film transistor array substrate according to an embodiment of the present invention.

2A to 2P, a method of fabricating a thin film transistor array substrate according to the present invention will be described in detail with reference to FIG.

First, the substrate 100 includes a thin film transistor region AA in which a thin film transistor is formed, a gate pad region BB in which a gate pad electrode pattern 112 for providing a gate signal to the thin film transistor is formed through a gate line GL, And a data pad region CC in which a data pad electrode pattern 162 for providing a data signal to the thin film transistor through the data line DL is formed.

As shown in FIG. 2A, a gate material 101 is formed on the front surface of the substrate 100. Here, the substrate 100 may be made of a transparent material such as glass or plastic including PET (polyethylene terephthalate), PEN (polyethylenenaphthylate), PP (polypropylene), PI (polyamide), TAC (triacetyl cellulose) And preferably has a glass material. The gate material 101 may be formed of a material selected from the group consisting of copper (Cu), copper alloy (Cu Alloy), aluminum (Al), aluminum nitride (AlNd), molybdenum (Mo), molybdenum alloy, chromium (Cr) And may have a single-layer or multi-layer structure formed of at least one metal material of titanium (Ti), titanium alloy, silver (Ag), and silver alloy. The gate material 101 may be formed by a metal material deposition process such as a sputtering process.

1 and 2B, the gate material 102 is patterned using a laser scribing process to form the thin film transistor region AA and the gate pad region BB of the substrate 100 The gate electrode pattern GL, the gate electrode pattern 110, and the gate pad electrode pattern 112 are formed. Thus, the gate wiring GL is formed in the first direction of the substrate 110, the gate electrode pattern 110 is formed protruding from the gate wiring GL, and the gate pad electrode pattern 112 is formed in the gate wiring GL).

3A to 3G are perspective views for explaining a stepwise patterning method of a gate electrode pattern, a gate wiring, and a gate pad electrode pattern using a laser scribing process according to an embodiment of the present invention.

First, as shown in FIG. 3A, a first region where a gate pattern (a gate electrode pattern, a gate wiring, and a gate pad electrode pattern) is formed on a substrate 100 using a first laser beam irradiating apparatus 200, The gate material 101 formed on the second region of the substrate 100 except the first region is removed by using the second laser beam irradiating apparatus 300. That is, each of the first and second laser beam irradiating devices 200 and 300 may transmit the first and second laser beams 210 and 310 directly to the gate material 101 while being transferred from one side of the substrate 100 to the other side. . At this time, each of the first and second laser beam projecting devices 200 and 300 transports in the same direction so as to have the same moving speed.

Specifically, the first laser beam irradiating apparatus 200 irradiates the first region of the substrate 100 with a first laser beam 210 having a first width, thereby directly irradiating the first region of the substrate 100 with a gate material (101) is patterned to form a gate pattern. At the same time, the second laser beam irradiating apparatus 300 irradiates the second region of the substrate 100 on which the gate pattern is not formed by directly irradiating the second laser beam 310 having the second width larger than the first width, The gate material 101 formed in the second region of the substrate 100 is removed. Here, since the laser beams 210 and 310 have excellent selectivity to selectively remove a single film according to power, only the gate material 101 is removed. The laser beams 210 and 310 may be a YLF laser beam using a solid containing Nd3 + as a medium or a Nd: YAG laser having an infrared wavelength of 1064 nm as a YLiF4 (YLF) crystal in which a solid is used as a medium Beam and an HF laser beam, which is an excimer laser using a vapor phase medium, may be used. However, the type or strength of the first and second lasers 210 and 310 is not limited to the gate material Depending on the type or thickness of the substrate 101.

On the other hand, the first laser beam irradiating apparatus 200 is transported without irradiating the first laser beam 210 at a position corresponding to the shape of the gate pattern, as shown in Fig. 3B.

When the removal of the gate material 101 in the first direction of the substrate 100 is completed, each of the first and second laser beam projecting devices 200 and 300 returns to one side of the substrate 10.

Next, the first laser beam irradiating apparatus 200 is transported in a second direction perpendicular to the first direction and in the horizontal direction so as to correspond to the shape of the gate pattern, and the second laser beam irradiating apparatus 30 transports the second laser beam Width in the second direction.

3C and 3D, the first laser beam irradiating device 200 forms the gate pattern by patterning the gate material 101 while moving in the first direction of the substrate 100, At the same time, the second laser beam irradiating device 300 removes the gate material 101 formed in the second region of the substrate 100. When the position of the gate pattern patterned by the first laser beam irradiating apparatus 200 and the position of the second laser beam irradiating apparatus 300 are overlapped with each other in this process, the second laser beam irradiating apparatus 300 is shown in FIG. 3E As shown, the second laser beam 310 is transported without being irradiated.

Next, as shown in FIG. 3E, when the gate patterns GL, 110 and 112 are formed on the substrate 100 by the first laser beam irradiation device 200, as shown in FIG. 1F, The laser beam irradiating apparatus 300 irradiates and removes the second laser beam 310 to the gate material 101 remaining in the second region on the substrate 100. At this time, the first laser beam irradiating apparatus 200 only transfers the first laser beam 210 without irradiating the gate material 101. Since the first and second laser beam irradiating devices 200 and 300 are spaced apart from each other by a predetermined distance, the first laser beam irradiating device 200 and the second laser beam irradiating device 200 may be formed in accordance with the area of the gate material 101 remaining on the substrate 100, May remove the gate material 101 of the second region together with the second laser beam irradiating device 300.

The gate material 101 formed on the substrate 100 is patterned and removed through the laser scribing process so that a predetermined gate pattern GL is formed on the substrate 100 as shown in FIGS. , 110 and 112 are formed.

When the gate patterns GL 110 and 112 are formed on the substrate 100 through the laser scribing process as described above, the gate line GL, the gate electrode pattern 110, And a gate pad electrode pattern 112 are formed on the entire surface of the substrate 100. At this time, the gate insulating layer 120 may be an inorganic material such as silicon nitride (SiNx) or silicon oxide (SiOx).

Next, as shown in FIG. 2D, an oxide semiconductor material 131 is formed on the gate insulating layer 120 corresponding to the gate electrode pattern 110. At this time, the oxide semiconductor material 131 may be zinc oxide (ZnO) based on gallium (Ga), indium (In), boron (B), aluminum (Al) The oxide semiconductor material 131 may be formed on the entire surface of the gate insulating layer 120 through a deposition process such as sputtering, CVD, and E-Beam.

Next, the oxide semiconductor material 131 is patterned by using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G, thereby forming a pattern corresponding to the upper portion of the gate electrode 110 as shown in FIG. The oxide semiconductor pattern 130 is formed.

Next, as shown in FIG. 2F, a data material 151 is formed on the entire surface of the substrate 100 so as to include the oxide semiconductor pattern 130. Here, the data material 151 may be formed of any one of metal materials such as molybdenum (Mo), nickel (Ni), chromium (Cr), and tungsten (W) The data material 151 may be formed on the entire surface of the substrate 100 by a metal material deposition process such as a sputtering process.

Next, by patterning the data material 151 using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G, a data line DL, a data pad A source electrode pattern 160 and a drain electrode pattern 150 spaced from each other are formed on the electrode pattern 162 and the oxide semiconductor pattern 130.

2 (h), a protective layer 170 is formed on the entire surface of the substrate 100 including the source electrode pattern 160 and the drain electrode pattern 150. Next, as shown in FIG. At this time, the passivation layer 170 may be formed of any one of silicon nitride (SiNx), silicon oxide (SiOx), BCB (Benzocyclobutene), and acrylic resin.

Next, as shown in FIG. 2I, a conductive material 181 is formed on the protective film 170. Next, as shown in FIG. Here, the conductive material 181 may be a transparent material such as indium tin oxide (ITO), indium zinc oxide (IZO), AZO, or ZnO.

Next, by patterning the conductive material 181 using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G, the pixel electrode pattern 182, gate A pad pattern 184, and a data pad pattern 186 are formed.

Next, as shown in FIG. 2K, the third laser beam irradiating device 500 is placed on the pixel electrode pattern 182 overlapping with the source electrode pattern 160, and the third laser beam irradiating device 500 The third laser beam 510 having the third width is directly irradiated to the pixel electrode pattern 182. [ Thus, the protective film 170 and the pixel electrode pattern 182 formed on the source electrode pattern 160 are etched by the light energy of the third laser beam 510, so that the pixel electrode pattern 182 is formed as shown in FIG. And is electrically connected to the source electrode pattern 160 through the first contact hole 190 formed in the protective film 170, as shown in FIG. In this case, when the third laser beam 510 of the third width is irradiated to the pixel electrode pattern 182, the pixel electrode pattern 182 is formed in a vertical shape, but the third width of the second laser beam 310 is The pixel electrode pattern 182 is formed so as to have an inclined surface when irradiated onto the pixel electrode pattern 182 in a stepwise manner.

2L, the third laser beam irradiating apparatus 500 is placed on the gate pad pattern 184 which overlaps with the gate pad electrode pattern 112 and the third laser beam irradiating apparatus 500 is placed on the gate pad pattern 184, The fourth laser beam 520 having the fourth width is directly irradiated onto the gate pad pattern 184. Here, the fourth width may be equal to the third width or wider than the third width. Accordingly, the protective film 170 and the gate pad pattern 184 formed on the gate pad electrode pattern 112 are etched by the light energy of the fourth laser beam 520, so that the gate pad pattern 184 is formed as shown in FIG. The gate pad electrode pattern 112 is electrically connected to the gate pad electrode pattern 112 through the second contact hole 192 formed in the passivation layer 170. In this case, when the fourth laser beam 520 of the fourth width is irradiated on the gate pad pattern 184, the gate pad pattern 184 is formed in a vertical shape, but the fourth width of the fourth laser beam 520 is The gate pad pattern 184 is formed so as to have an inclined surface when the gate pad pattern 184 is irradiated to the gate pad pattern 184 in a stepwise decreasing manner.

In order to increase the contact area between the gate pad pattern 112 and the gate pad pattern 184, the fourth laser beam 520 is irradiated to the gate pad pattern 184 a plurality of times at a predetermined interval, And the gate pad electrode pattern 112 can be formed in a plurality of contact portions.

2M, the third laser beam irradiating apparatus 500 is positioned on the data pad pattern 186 which overlaps with the data pad electrode pattern 162 and the third laser beam irradiating apparatus 500 is placed on the data pad pattern 186. In addition, The fifth laser beam 530 having the fifth width is directly irradiated onto the data pad pattern 186. Here, the fifth width may have a width between the third width and the fourth width, or may be equal to or wider than the fourth width. The protective layer 170 and the data pad pattern 186 formed on the data pad electrode pattern 162 are etched by the light energy of the fifth laser beam 530, As shown in the figure, the data pad electrode pattern 162 is electrically connected through the third contact hole 194 formed in the passivation layer 170. In this case, when the fifth laser beam 530 of the fifth width is irradiated on the data pad pattern 186, the data pad pattern 186 is formed in a vertical shape, but the fifth width of the fifth laser beam 530 is The data pad pattern 186 is formed so as to have an inclined surface when irradiated onto the data pad pattern 186 in a stepwise manner.

The fifth laser beam 530 is irradiated to the data pad pattern 186 several times at a predetermined interval to increase the contact area between the data pad electrode pattern 162 and the data pad pattern 186, And the data pad electrode pattern 162 can be formed in a plurality of contact portions.

As described above, the present invention can simplify the manufacturing process and reduce the manufacturing process time by performing all the patterning processes of the thin film transistor array substrate using the laser scribing process. Furthermore, the present invention can reduce the yield reduction due to the change of the electrical characteristics of the oxide semiconductor pattern 130, simplify the manufacturing process of the thin film transistor array substrate, and reduce the processing time.

The gate pad pattern 112 and the gate pad pattern 184 are formed by using the third to fifth laser beams 510, 520, and 530. In addition, And the data pad electrode pattern 162 and the data pad pattern 186 are electrically connected to each other, the process can be simplified and the process time can be shortened.

In the above-described manufacturing method of the present invention, the first energizing step for electrically connecting the source electrode pattern 160 and the pixel electrode pattern 182, the first energizing step for electrically connecting the gate pad electrode pattern 112 and the gate pad pattern 184 And the third energizing process for electrically connecting the data pad electrode pattern 162 and the data pad pattern 186 are sequentially performed. However, the present invention is not limited to this, and FIGS. 4A, 4B, The present invention can be variously carried out within a range in which the process time can be reduced as shown in FIG.

4A, a third laser beam 510 is applied to a pixel electrode pattern 182 by using a third laser beam irradiating device 500, The first energizing process is performed. 4B, the fourth laser beam 520 is irradiated to the gate pad pattern 184 using the third laser beam irradiating apparatus 500, and the fourth laser beam irradiating apparatus 600 is irradiated with the fourth laser beam 520, The second and third energizing processes may be simultaneously performed by irradiating the fifth laser beam 530 onto the data pad pattern 186. [

5, the third laser beam irradiating apparatus 500 irradiates the third laser beam 510 onto the pixel electrode pattern 182, The fourth laser beam irradiating apparatus 600 is used to irradiate the fourth laser beam 520 onto the gutter pad pattern 184 and the fifth laser beam 530 ) To the data pad pattern 186 so that the first through third energizing processes can be performed at the same time.

6A to 6E illustrate a method of fabricating a thin film transistor array substrate according to another embodiment of the present invention.

First, the substrate 100 on which the protective film 170 is formed is provided through the manufacturing process shown in FIGS. 2A to 2H.

6A, the above-described third laser beam irradiating device 500 is placed on the source electrode pattern 160, and the third laser beam irradiating device 500, which is generated by the third laser beam irradiating device 500, A first contact hole 190 for exposing a part of the source electrode pattern 160 is formed by removing the passivation layer 170 using the second passivation layer 510.

6B, the above-described third laser beam irradiating apparatus 500 is placed on the gate pad electrode pattern 112, and the fourth laser beam irradiated by the third laser beam irradiating apparatus 500 A second contact hole 192 for exposing a part of the gate pad electrode pattern 112 is formed by removing the protective film 170 and the gate insulating film 120 using the beam 520. [

6C, the above-described third laser beam irradiating apparatus 500 is placed on the data pad electrode pattern 162, and the fifth laser generated by the third laser beam irradiating apparatus 500 A third contact hole 194 for exposing a part of the data pad electrode pattern 162 is formed by removing the protective film 170 by using the beam 530.

Then, as shown in 6d, a conductive material 181 is formed on the protective film 170 as described above.

Next, the conductive material 181 is patterned using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G to form the first contact hole 190 as shown in FIGS. 1 and 6E A gate pad pattern 184 electrically connected to the gate pad electrode pattern 112 through the second contact hole 192 and a gate electrode pattern 184 electrically connected to the gate electrode pattern 142 through the third contact hole 192. [ A data pad pattern 186 electrically connected to the data pad electrode pattern 162 is formed through the contact hole 194.

Meanwhile, the method of forming the first to third contact holes 190, 192, and 194 is not limited to the sequential formation as described above. As shown in FIGS. 7A and 7B and 8, Can be variously carried out within a range that can reduce the amount of the catalyst.

Another method of manufacturing a contact hole according to an embodiment of the present invention includes first contact holes 190 (see FIG. 7A) using a third laser beam 510 of a third laser beam irradiating device 500, 7B, the second contact hole 192 is formed by using the fourth laser beam 520 of the third laser beam irradiation device 500, and the fourth laser beam irradiation The third contact hole 194 may be formed using the fifth laser beam 530 of the apparatus 600. [

Another contact hole manufacturing method of the present invention according to another embodiment of the present invention is a method for manufacturing a contact hole according to another embodiment of the present invention, as shown in Fig. 8, in which the third to fifth laser beams irradiated from each of the third to fifth laser beam irradiating devices 500, The first through third contact holes 190, 192, and 194 may be formed simultaneously using the laser beams 510, 520, and 530, respectively.

9 is a block diagram for explaining an apparatus for manufacturing a thin film transistor array substrate according to the first embodiment of the present invention.

9 and FIG. 1 to FIG. 3G, the apparatus for fabricating a thin film transistor array substrate according to the first embodiment of the present invention includes a gate material formation unit 800; A gate pattern forming portion 802; A gate insulating film forming portion 804; A semiconductor material forming portion 806; A semiconductor pattern forming portion 808; A data material forming unit 810; A data pattern forming unit 812; A protective film forming portion 814; A conductive material forming portion 816; A conductive material pattern forming portion 818; And an energizing hole unit 820. [ The apparatus for fabricating a thin film transistor array substrate according to an embodiment of the present invention may further include a cleaning / drying process unit for cleaning and drying the substrate between each of the above processes, . ≪ / RTI >

The gate material forming portion 800 forms a gate material 101 on the entire surface of the substrate 100 by using a deposition apparatus, as shown in FIG. 2A.

The gate pattern forming portion 802 may be formed by a laser scribing process as shown in FIGS. 3A to 3G to form a gate wiring GL, a gate electrode pattern (110); And the gate pad electrode pattern 112 are formed. For this purpose, the gate pattern forming portion 802 is configured to include a laser scribing device as shown in Fig.

Referring to FIG. 10, a laser scribing apparatus according to an embodiment of the present invention includes a base frame 902; Stage 904; A gantry section 900; And the first and second laser beam projecting devices 200 and 300.

The base frame 902 supports the stage 904 and includes therein a stage 904, a gantry unit 900, a drive unit for driving or controlling the first and second laser beam projecting units 200 and 300, / Control device (not shown) may be installed.

The stage 904 is seated with a substrate 100 that is carried by an external substrate transfer device (not shown). At this time, the substrate transport apparatus loads the substrate 100 on which the gate material 101 is formed, as shown in FIG. 2A, onto the stage 904.

The stage 904 may further include a lift pin (not shown) for loading / unloading the substrate 100, and may include a plurality of vacuum pads (not shown) for vacuum- May be formed. Further, the stage 904 can be moved in the X-axis and Y-axis directions by the driving / controlling device.

The gantry unit 900 includes a first gantry 910 mounted on the base frame 902; And a second gantry 920 installed in the first gantry 910 to transfer the first and second laser beam projecting devices 200 and 300 in the X axis direction.

The first gantry 910 transports the second gantry 920 in the Y-axis direction using an LM guide or a linear motor. To this end, the first gantry 910 includes a pair of first guiders 910a and 910b provided on both sides of the base frame 902 in parallel with each other; And a pair of first sliders 910c and 910d provided on the first guiders 910a and 910b, respectively.

The second gantry 920 is moved in the Y axis direction by driving the first gantry 910 and the first and second laser beam projecting devices 200 and 300 are moved in the X axis direction . To this end, the second gantry 920 includes a second guider 920a coupled between a pair of first sliders 910c and 910d; A second slider 920b provided on the second guider 920a; And a third slider 920c provided on the second guider 920a so as to be spaced apart from the second slider 920b by a predetermined distance.

The first laser beam irradiating apparatus 200 is installed on the second slider 920b and is conveyed in the Y axis direction in accordance with the conveyance of the pair of first sliders 910c and 910d according to the driving of the first gantry 910 And is conveyed in the X-axis direction along with the conveyance of the second slider 920b as the second gantry 920 is driven. The first laser beam irradiating apparatus 200 includes a gate material 101 in a first region where a thin film pattern is to be formed on the substrate 100 while being transported in the X and Y axis directions by driving the gantry unit 900, The gate electrode pattern 110 and the gate pad electrode pattern 112 shown in FIGS. 1 and 2B are formed by directly irradiating the first laser beam 210 having the first width and the first laser beam 210 having the first width, .

The second laser beam irradiating apparatus 300 is installed in the third slider 920c and is conveyed in the Y axis direction in accordance with the conveyance of the pair of first sliders 910c and 910d according to the driving of the first gantry 910, And is conveyed in the X-axis direction along with the conveyance of the third slider 920c according to the driving of the second gantry 920. [ The second laser beam irradiating apparatus 300 is moved in the X-axis and Y-axis directions by driving the gantry section 900 to form gate materials of a second region where a thin film pattern is not formed on the substrate 100 The second region of the gate material 101 formed on the substrate 100 is removed by directly irradiating the second laser beam 310 of the second width with the second laser beam 310 of the second width.

In the laser scribing apparatus of the first embodiment described above, the first and second laser beam irradiators 200 and 300 are transferred. However, the present invention is not limited to this, and the position of the laser beam irradiators 200 and 300 And only the stage 904 may be transported, and further, both of the laser beam projecting devices 200 and 300 and the stage 904 may be simultaneously transported.

11, the laser scribing apparatus according to the second embodiment of the present invention includes a pair of first and second laser irradiating units 921 and 920, (200, 300) may be provided at a predetermined interval to reduce the processing time. In the laser scribing apparatus according to the second embodiment of the present invention, the substrate 100 is divided into at least two divided regions, and the first and second laser beam irradiating apparatuses 200 and 300 are provided for each divided region The processing time can be further reduced by performing the above-described patterning process.

On the other hand, the laser scribing apparatus according to the third embodiment of the present invention includes a plurality of second gantries 920 in the first gantry 910 to further reduce processing time, as shown in FIG. 12 And the first and second laser beam projecting devices 200 and 300 may be installed in the second gantry 920 at a predetermined interval. In the laser scribing apparatus according to the third embodiment of the present invention, the substrate 100 is divided into at least four divided areas, and the first and second laser beam irradiating devices 200 and 300 are provided for each of the divided areas By performing the above-described patterning process, the processing time can be further reduced.

9, the gate insulating film forming portion 804 is formed so as to include the gate wiring GL, the gate electrode pattern 110, and the gate pad electrode pattern 112, as shown in Figs. 1 and 2C. A gate insulating film 120 is formed on the entire surface of the substrate 100.

The semiconductor material forming portion 806 forms an oxide semiconductor material 131 on the entire surface of the gate insulating layer 120 using a deposition apparatus, as shown in FIG. 2D.

The semiconductor pattern forming portion 808 is formed by patterning the oxide semiconductor material 131 through a laser scribing process as shown in FIGS. 3A to 3G to form the upper portion of the gate electrode 110 The oxide semiconductor pattern 130 is formed. The semiconductor pattern forming unit 808 may perform the patterning process using the laser scribing apparatus shown in any one of FIGS. 10 to 12.

The data material forming portion 810 forms a data material 151 on the entire surface of the substrate 100 so as to include the oxide semiconductor pattern 130 using a deposition apparatus as shown in FIG.

The data pattern forming section 812 patterns the data material 151 using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G, A source electrode pattern 160 and a drain electrode pattern 150 which are spaced apart from each other on the gate insulating layer 150 and the oxide semiconductor pattern 150, and a data pad electrode pattern 162 are formed. The data pattern forming unit 812 may perform the patterning process using the laser scribing apparatus shown in any one of FIGS. 10 to 12.

The passivation layer forming portion 814 forms a passivation layer 170 on the entire surface of the substrate 100 including the source electrode pattern 160 and the drain electrode pattern 150 as shown in FIG.

The conductive material forming portion 816 forms a conductive material 181 on the protective film 170, as shown in FIG. 2I. Here, the conductive material 181 may be a transparent material such as ITO, IZO, AZO, or ZnO.

The conductive material pattern forming portion 820 may pattern the conductive material 181 using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G, An electrode pattern 182, a gate pad pattern 184, and a data pad pattern 186 are formed. The conductive material pattern forming unit 820 may perform the patterning process using the laser scribing apparatus shown in any one of FIGS. 10 to 12.

The energizing hole portion 822 positions the third laser beam irradiating device 500 on the pixel electrode pattern 182 overlapping with the source electrode pattern 160 as shown in Figure 2K, The third laser beam 510 having the third width is directly irradiated from the irradiation device 500 onto the pixel electrode pattern 182. [ Accordingly, the protective film 170 and the pixel electrode pattern 182 formed on the source electrode pattern 160 are etched by the light energy of the third laser beam 510, so that the pixel electrode pattern 182 is formed as shown in FIG. And is electrically connected to the source electrode pattern 160 through the contact hole 190 formed in the protective film 170 as shown in FIG. In this case, when the third laser beam 510 of the third width is irradiated to the pixel electrode pattern 182, the pixel electrode pattern 182 is formed in a vertical shape, but the third width of the second laser beam 310 is The pixel electrode pattern 182 is formed so as to have an inclined surface when irradiated onto the pixel electrode pattern 182 in a stepwise manner.

As shown in FIG. 21, the power supply control unit 822 positions the third laser beam irradiating apparatus 500 on the gate pad pattern 184 which overlaps with the gate pad electrode pattern 112, 3 directs the fourth laser beam 520 having the fourth width from the laser beam irradiating apparatus 500 to the gate pad pattern 184 directly. Here, the fourth width may be equal to the third width or wider than the third width. Accordingly, the protective film 170 and the gate pad pattern 184 formed on the gate pad electrode pattern 112 are etched by the light energy of the fourth laser beam 520, so that the gate pad pattern 184 is formed as shown in FIG. And is electrically connected to the gate pad electrode pattern 112 as shown in FIG. In this case, when the fourth laser beam 520 of the fourth width is irradiated on the gate pad pattern 184, the gate pad pattern 184 is formed in a vertical shape, but the fourth width of the fourth laser beam 520 is The gate pad pattern 184 is formed so as to have an inclined surface when the gate pad pattern 184 is irradiated to the gate pad pattern 184 in a stepwise decreasing manner.

In order to increase the contact area between the gate pad electrode pattern 112 and the gate pad pattern 184, the power supply control unit 822 applies a fourth laser beam 520 to the gate pad pattern 184 at regular intervals A plurality of contact portions between the gate pad pattern 184 and the gate pad electrode pattern 112 can be formed.

2M, the power supply control unit 822 positions the third laser beam irradiating apparatus 500 on the data pad pattern 186 overlapping the data pad electrode pattern 162, 3 laser beam 530 having a fifth width from the laser beam irradiating apparatus 500 is directly irradiated onto the data pad pattern 186. [ Here, the fifth width may have a width between the third width and the fourth width, or may be equal to or wider than the fourth width. The protective layer 170 and the data pad pattern 186 formed on the data pad electrode pattern 162 are etched by the light energy of the fifth laser beam 530, And is electrically connected to the data pad electrode pattern 162 as shown. In this case, when the fifth laser beam 530 of the fifth width is irradiated on the data pad pattern 186, the data pad pattern 186 is formed in a vertical shape, but the fifth width of the fifth laser beam 530 is The data pad pattern 186 is formed so as to have an inclined surface when irradiated onto the data pad pattern 186 in a stepwise manner.

In order to increase the area of contact between the data pad electrode pattern 162 and the data pad pattern 186, the power supply control unit 822 applies a fifth laser beam 530 to the data pad pattern 186 several times A plurality of contact portions between the data pad patterns 186 and the data pad electrode patterns 162 can be formed.

The power supply unit 822 may include a laser scriber device according to the fourth embodiment shown in FIG.

Referring to FIG. 13, a laser scribing apparatus according to a fourth embodiment of the present invention includes a base frame 1002; Stage 1004; A gantry unit 1000; And a third laser beam irradiating device (500). The laser scribing apparatus according to the fourth embodiment is different from the laser scribing apparatus according to the first embodiment except for the third laser beam irradiating apparatus 500, The description of the same configuration will be replaced with the above description.

The third laser beam irradiating apparatus 500 is installed on the second slider 1020b and is conveyed in the Y axis direction in accordance with the conveyance of the pair of first sliders 1010c and 1010d according to the driving of the first gantry 1010 And is conveyed in the X-axis direction along with the conveyance of the second slider 1020b according to the driving of the second gantry 1020. [ The third laser beam irradiating apparatus 500 irradiates the third to fifth laser beams 510, 520, and 530 on the substrate 100 while being transported in the X and Y axis directions by driving the gantry unit 1000 The above-described first to third energizing processes as shown in Figs. 2K to 2N are sequentially performed.

On the other hand, the third laser beam irradiating apparatus 500 of the laser scribing apparatus according to the fourth embodiment of the present invention is a laser scribing apparatus according to the second and third embodiments shown in Figs. 11 and 12 As shown in FIG.

4A to 5, in order to simultaneously perform at least two energizing processes among the first to third energizing processes described above, the energizing process unit 822 may be configured as shown in FIG. And a laser scribing apparatus according to the fifth embodiment.

Referring to FIG. 14, the laser scribing apparatus according to the fifth embodiment includes a base frame 1102; Stage 1104; A gantry portion 1100; And a plurality of third to fifth laser beam projecting devices 500, 600, and 700.

Since the base frame 1102 and the stage 1104 are the same as those of the above-described laser scribing apparatus, description thereof will be substituted by the above description.

The gantry unit 1100 is the same as the above-described laser scraping apparatus except that the second to fourth gantries 1120, 1220, 1320 are provided in the first gantry 1110 of the laser scribing apparatus described above Therefore, the description thereof will be replaced with the above description.

Each of the plurality of third laser beam irradiating devices 500 is provided on each of the plurality of fourth sliders 1120b and is moved in the Y-axis direction in accordance with the feeding of the first sliders 1110c and 1110d in accordance with the driving of the first gantry 1110. [ And is conveyed in the X-axis direction in accordance with the feeding of the fourth slider 1120b in accordance with the driving of the second gantry 1120. [ Each of the plurality of third laser beam irradiating apparatuses 500 is moved in the X and Y axis directions so as to have the same interval according to the driving of the gantry section 1100, And irradiates the third laser beam 510 to perform the first energization process. At this time, the substrate 100 may be divided into at least nine divided regions according to the number of the third to fifth laser beam irradiating devices 500, 600, and 700. Accordingly, each of the plurality of third laser beam irradiating apparatuses 500 irradiates the third laser beam 510 to the corresponding divided region on the substrate 100 to perform the first energizing process.

Each of the plurality of fourth laser beam irradiating apparatuses 600 is provided on each of the plurality of fifth sliders 1220b and is moved in the Y-axis direction in accordance with the feeding of the second sliders 1210c and 1210d according to the driving of the first gantry 1110. [ And is conveyed in the X-axis direction in accordance with the feeding of the fifth slider 1120b according to the driving of the third gantry 1120. [ Accordingly, each of the plurality of fourth laser beam irradiating devices 600 irradiates the fourth divided laser beam 520 of the fourth width to the corresponding divided region on the substrate 100 to perform the second energizing process described above.

Each of the plurality of fifth laser beam irradiating devices 700 is provided on each of the plurality of sixth sliders 1320b and is moved in the Y-axis direction in accordance with the feeding of the third sliders 1310c and 1310d in accordance with the driving of the first gantry 1110. [ And is conveyed in the X-axis direction in accordance with the conveyance of the sixth slider 1320b according to the driving of the fourth gantry 1320. [ Accordingly, each of the plurality of fifth laser beam irradiating devices 700 irradiates the fifth divided laser beam 530 of the fifth width to the corresponding divided region on the substrate 100 to perform the third energizing process described above.

Meanwhile, since each of the second to fourth gantry 1120, 1220, and 1320 is installed in the first gantry 1110, mutual interference may occur during transportation. Accordingly, the first to third energizing processes are simultaneously performed on the above-described substrate 100 with respect to the divided regions on the substrate 100 that are not interfered with each other by the second to fourth ganties 1120, 1220, and 1320 And at least two energizing processes among the first to third energizing processes described above are simultaneously performed for the divided regions on the substrate 100 that are mutually interfered with each other during the transportation of each of the second to fourth gantries 1120, 1220, Or proceed sequentially.

15 is a block diagram for explaining an apparatus for manufacturing a thin film transistor array substrate according to a second embodiment of the present invention.

Referring to FIG. 15, an apparatus for fabricating a thin film transistor array substrate according to a second embodiment of the present invention includes a gate material forming portion 800; A gate pattern forming portion 802; A gate insulating film forming portion 804; A semiconductor material forming portion 806; A semiconductor pattern forming portion 808; A data material forming unit 810; A data pattern forming unit 812; A protective film forming portion 814; A contact hole forming portion 830; A conductive material forming portion 832; And a conductive material pattern forming unit 834. The apparatus for fabricating a thin film transistor array substrate according to an embodiment of the present invention may further include a cleaning / drying process unit for cleaning and drying the substrate between each of the above processes, . ≪ / RTI >

The apparatus for fabricating a thin film transistor array substrate according to the second embodiment of the present invention includes a contact hole forming portion 830; A conductive material forming portion 832; And the conductive material pattern forming portion 834, the same structure as that of the thin film transistor array substrate manufacturing apparatus according to the second embodiment of the present invention is described. .

The contact hole forming portion 830 is formed on the protective film 170 using the laser scribing process as shown in FIGS. 6A to 6C, 7A and 7B or 8, 190, 192, and 194 are formed. For this purpose, the contact hole forming portion 830 may be configured to include the laser scribing device described above with reference to FIG. 13 or FIG.

The conductive material forming portion 832 forms a conductive material 181 on the protective film 170 on which the first to third contact holes 190, 192 and 194 are formed through the deposition apparatus as shown in FIG. 6D.

The conductive material pattern forming portion 834 patterns the conductive material 181 using the same method as the laser scribing process described above with reference to FIGS. 3A to 3G to form a first contact A pixel electrode pattern 182 electrically connected to the source electrode pattern 160 through the hole 190 and a gate pad pattern 184 electrically connected to the gate pad electrode pattern 112 through the second contact hole 192 And a data pad pattern 186 electrically connected to the data pad electrode pattern 162 through the third contact hole 194. For this, the conductive material pattern forming portion 834 may include the laser scribing device shown in any one of FIGS. 10 to 12.

As described above, the manufacturing apparatus of the thin film transistor array substrate of the present invention can simplify the manufacturing process by performing at least one patterning process during the patterning process of the thin film transistor array substrate using the laser scribing process, Can be reduced. In addition, the manufacturing apparatus of the present invention can prevent the change of the electrical characteristics of the oxide semiconductor pattern 130 by forming the oxide semiconductor pattern 130 by patterning the oxide semiconductor material 131 using the laser scribing process . The manufacturing apparatus of the present invention uses the third to fifth laser beams 510, 520 and 530 to form the source electrode pattern 160 and the pixel electrode pattern 182, the gate pad electrode pattern 112, The data pad electrode pattern 184 and the data pad electrode pattern 162 and the data pad pattern 186 are electrically connected to each other, the process can be simplified and the process time can be reduced.

As a result, the manufacturing apparatus of the present invention can prevent the change of the electrical characteristics of the oxide semiconductor layer pattern 130, simplify the manufacturing process of the thin film transistor array substrate, and reduce the processing time.

It will be understood by those skilled in the art that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. It is therefore to be understood that the above-described embodiments are illustrative in all aspects and not restrictive. The scope of the present invention is defined by the appended claims rather than the detailed description and all changes or modifications derived from the meaning and scope of the claims and their equivalents are to be construed as being included within the scope of the present invention do.

1 is a plan view for explaining a thin film transistor array substrate according to an embodiment of the present invention;

FIGS. 2A to 2N are cross-sectional views for explaining a method of manufacturing a thin film transistor array substrate according to a first embodiment of the present invention.

FIGS. 3A through 3G are diagrams for explaining a laser scribing process for fabricating a thin film transistor array substrate according to an embodiment of the present invention; FIG.

4A and 4B are cross-sectional views illustrating first through third energizing processes according to an embodiment of the present invention;

5 is a cross-sectional view illustrating first through third energizing processes according to another embodiment of the present invention.

6A to 6E are cross-sectional views for explaining a step-by-step description of a method of manufacturing a thin film transistor array substrate according to a second embodiment of the present invention.

7A and 7B are cross-sectional views illustrating first through third contact hole forming processes according to an embodiment of the present invention;

8 is a sectional view for explaining the first through third contact hole forming processes according to another embodiment of the present invention.

9 is a block diagram for explaining a thin film transistor manufacturing apparatus according to the first embodiment of the present invention.

10 is a view for explaining a laser scribing apparatus according to the first embodiment of the present invention.

11 is a view for explaining a laser scribing apparatus according to a second embodiment of the present invention.

12 is a view for explaining a laser scribing apparatus according to a third embodiment of the present invention;

13 is a view for explaining a laser scribing apparatus according to a fourth embodiment of the present invention.

14 is a view for explaining a laser scribing apparatus according to a fifth embodiment of the present invention.

15 is a block diagram for explaining a thin film transistor manufacturing apparatus according to a second embodiment of the present invention;

Description of the Related Art [0002]

100: substrate 110: gate electrode pattern

112: gate pad electrode pattern 130: oxide semiconductor pattern

131: oxide semiconductor material 150: drain electrode pattern

162: Data pad electrode pattern 160: Source electrode pattern

170: protective film 182: pixel electrode pattern

184: gate pad pattern 186: data pad pattern

200, 300, 500, 600, 700: laser beam irradiation device

210, 310, 510, 520, 530: laser beam

Claims (17)

Forming a gate material on a front surface of the substrate; A first patterning step of patterning the gate material to form a gate pattern including a gate wiring, a gate electrode pattern and a gate pad electrode pattern; Forming a gate insulating film on a front surface of the substrate on which the gate pattern is formed; Forming an oxide semiconductor material on the gate insulating layer; A second patterning step of patterning the oxide semiconductor material to form an oxide semiconductor pattern on the gate electrode pattern; Forming a data material on the entire surface of the substrate on which the oxide semiconductor pattern is formed; A third patterning step of patterning the data material to form a data pattern including a data wiring, a data pad electrode pattern, and a source electrode pattern and a drain electrode pattern spaced on the oxide semiconductor pattern; And forming a protective film on the entire surface of the substrate on which the source electrode pattern and the drain electrode pattern are formed, Wherein at least one of the first to third patterning steps forms a corresponding pattern through a laser scribing process using a laser beam, wherein a pattern is formed on the substrate by using a first laser beam of a first width And the second region of the material is removed except for the first region where no pattern is formed on the substrate by using the second laser beam having a width larger than the first width. Wherein said method comprises the steps of: The method according to claim 1, Wherein the oxide semiconductor material is a zinc oxide (ZnO) based material in which zinc oxide (ZnO) is doped with one of gallium (Ga), indium (In), boron (B), and aluminum A method of manufacturing a transistor array substrate. The method according to claim 1, Forming a conductive material on the protective film; A fourth patterning step of patterning the conductive material to form a pixel electrode pattern, a gate pad pattern, and a data pad pattern; And A first energizing step of electrically connecting the pixel electrode pattern and the source electrode pattern, a second energizing step of electrically connecting the gate pad pattern and the gate pad electrode pattern, and a second energizing step of electrically connecting the data pad pattern and the data pad electrode pattern And a third energizing step of electrically connecting the first electrode and the second electrode to each other, Wherein a laser process using a laser beam is performed in at least one of the fourth patterning step and the energization step. The method according to claim 1, A contact hole for forming a first contact hole for exposing the source electrode pattern on the protective film, a second contact hole for exposing the gate pad electrode pattern, and a third contact hole for exposing the data pad electrode pattern step; Forming a conductive material on the passivation layer on which the first to third contact holes are formed; And A pixel electrode pattern connected to the source electrode pattern through the first contact hole by patterning the conductive material, a gate pad pattern connected to the gate pad electrode pattern through the second contact hole, And a fourth patterning step of forming a data pad pattern connected to the data pad electrode pattern, Wherein at least one of the contact hole forming step and the fourth patterning step forms a corresponding pattern through a laser scribing process using a laser beam. The method according to claim 3 or 4, Wherein the fourth patterning step comprises patterning a material of a first region in which a pattern is to be formed on the substrate using the first laser beam and forming a pattern on the substrate using the second laser beam, And removing the material of the second region excluding the first region. A gate material forming portion for forming a gate material on a front surface of the substrate; A gate pattern forming part for patterning the gate material to form a gate pattern including a gate wiring, a gate electrode pattern and a gate pad electrode pattern; A gate insulating layer forming unit forming a gate insulating layer on a front surface of the substrate on which the gate pattern is formed; A semiconductor material forming part for forming an oxide semiconductor material on the gate insulating film; A semiconductor pattern forming part for patterning the oxide semiconductor material to form an oxide semiconductor pattern on the gate electrode pattern; A data material forming unit for forming a data material on the entire surface of the substrate on which the oxide semiconductor pattern is formed; A data pattern forming unit for patterning the data material to form a data pattern including a data wiring and a data pad electrode pattern and a source electrode pattern and a drain electrode pattern separated on the oxide semiconductor pattern; And And a protective film forming unit forming a protective film on the entire surface of the substrate on which the source electrode pattern and the drain electrode pattern are formed, Wherein at least one of the gate pattern forming portion, the oxide semiconductor pattern forming portion, and the data pattern forming portion is formed by a laser beam scribing process using a laser beam and is generated by at least one first laser beam irradiating device The first laser beam having a width larger than the first width, which is generated by the at least one second laser beam irradiation device, is patterned using a first laser beam having a first width, Wherein the second region of the substrate is removed using a second laser beam except a first region where no pattern is formed on the substrate. The method according to claim 6, A conductive material forming part for forming a conductive material on the protective film; A conductive material pattern forming unit for patterning the conductive material to form a pixel electrode pattern, a gate pad pattern, and a data pad pattern; And A first energizing step of electrically connecting the pixel electrode pattern and the source electrode pattern, a second energizing step of electrically connecting the gate pad pattern and the gate pad electrode pattern, and a second energizing step of electrically connecting the data pad pattern and the data pad electrode pattern And an energizing unit for performing a third energizing process for electrically connecting the electrodes, Wherein at least one of the conductive material pattern forming portion and the conductive paste processing portion performs a laser process using a laser beam. The method according to claim 6, A contact hole for forming a first contact hole for exposing the source electrode pattern on the protective film, a second contact hole for exposing the gate pad electrode pattern, and a third contact hole for exposing the data pad electrode pattern part; A conductive material forming portion for forming a conductive material on the protective film on which the first to third contact holes are formed; And A pixel electrode pattern connected to the source electrode pattern through the first contact hole by patterning the conductive material, a gate pad pattern connected to the gate pad electrode pattern through the second contact hole, And a conductive material pattern forming unit for forming a data pad pattern connected to the data pad electrode pattern, Wherein at least one of the contact hole forming portion and the conductive material pattern forming portion is a laser process using a laser beam. 9. The method according to claim 7 or 8, The conductive material pattern forming unit may pattern the material of the first region on which the pattern is to be formed on the substrate using the first laser beam of the first width and pattern the material of the first region on the substrate by using the second laser beam. And removing the material of the second region other than the first region which is not formed. delete delete delete delete delete delete delete delete

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