KR20100011101A - Detector for detecting x-ray image and method thereof - Google Patents

Abstract

PURPOSE: A detector for detecting an x-ray image is provided to manufacture cost and make a manufacturing process simple by using a detection method in which TFT is applied. CONSTITUTION: A detector for detecting an x-ray image comprises a detector body, a plurality of electrodes(330a,330b), and an optical conducting layer(350). The gas is filled inside the detector body. A gas layer(360) of the detector body changes an X-Ray signal to an electric signal. A plurality of electrodes is formed on the body. The optical conducting layer is formed inside the enclosure of the body. After trapping the ionized electric charge, the optical conducting layer transfers to an electrode.

Description

Detector for Detecting X-Ray Image And Method Thereof}

The present invention relates to a detector for detecting an x-ray image. Specifically, a photoconductive layer is used for the detector for detecting an x-ray image based on a plasma display panel (PDP) to maximize the detection efficiency of an image, and a TFT is not used. In addition, the present invention relates to an apparatus capable of solving the problem of the configuration of the detection circuit by making it possible to use a detection method to which a TFT is applied.

X-ray inspection method currently widely used in medical, engineering, etc. is taken using the X-ray detection film, and undergoes a predetermined film printing step in order to know the result. However, this caused a long time in terms of usability since the photograph of the desired object could be recognized after a certain time, especially when the film itself was damaged due to difficulty in storing and preserving the film after shooting. There was a difficult problem to check.

In order to solve the above problems, a detector for X-ray image detection using a thin film transistor (TFT) has been researched and developed. The detector using the TFT can realize the advantage of using the TFT as a switching element and diagnosing the result in real time immediately after the X-ray is taken. The X-ray signal detection method currently commercialized is indirect and direct. Can be divided.

1 is a schematic diagram showing a detector of a conventional TFT type MicroGap method.

The illustrated figure shows a TFT 10 formed on the rear substrate A, a dielectric layer 20 formed on the rear substrate, and a gas layer 30 which is a constant spaced apart from the dielectric layer 20, and is formed thereon. The upper electrode 40 is implemented. Inside the gas layer, an electrode 41 and a cathode 42 are provided. In driving, the X-ray collides with the gas layer, and the charge generated in the gas layer moves to the second electrode 42, which is a lower collecting electrode, and the collected charge is accumulated in the capacitor 11 to read the signal to realize an image. do. In this structure, the MicroGap part (P) is a structure for using gas in a detector using a TFT. When the TFT is filled and sealed only with the internal gas, the interference of each pixel cannot be controlled. It collects the generated charge toward the readout pixel by collecting the charge.

However, the above-described TFT-type MicroGap detector uses only amplification of the gas, which reduces the detection efficiency and prevents the micro gap from completely blocking the cross talk of the gas. As a result, the signal becomes cross talk. There was a problem. Furthermore, the addition of a gas layer space forming process and a laser lithography process for forming hole-shaped micro gaps in a TFT process line has caused a problem of increasing the complexity, cost, and processing time of a manufacturing method.

2A and 2B are schematic cross-sectional views of a detector for detecting X-ray images implemented in a conventional indirect manner.

Referring to FIG. 2A, in the conventional indirect method, a photodiode 120 is formed on a TFT 110, and a scintillator converts an X-ray signal into visible light on the photodiode 120. Scintillator, 130 is applied to convert the X-ray signal converted into visible light by the scintillator 130 into an electrical signal through the photodiode 120, and then stored in a capacitor of the TFT 110 and then TFT 110. A readout signal is applied to the gate electrode of the to read the X-ray signal charged in the capacitor.

However, in the conventional indirect method, the photodiode 120 must be manufactured on the TFT 110 and the scintillator 130 must be deposited thereon. Therefore, the structure is complicated and the manufacturing process is complicated. There was a problem.

In addition, when the X-ray signal is converted into visible light by the scintillator, the efficiency is low, and thus the original signal is reduced. As the visible light passes through the photodiode 120, loss occurs and the X-ray detected by the last TFT. Since the signal is small, there is a problem that the quality of the detected image image is degraded.

2B is a schematic cross-sectional view of a detector for detecting X-ray images, which is implemented by a conventional direct method.

Referring to FIG. 2B, the conventional direct method uses a TFT similarly to the indirect method, and an X-ray sensitive photoconductor (a-Se, Csl, PbO, 140) is formed on the TFT 110. To convert the X-ray signal into an electrical signal, and store the electrons generated by the X-ray in the capacitor of the TFT 110 and apply a read signal to the gate to read the X-ray signal charged in the capacitor. to be.

However, the conventional direct method requires applying a high voltage of several thousand volts to the photoconductor 140 in order to activate the photoconductor 140 deposited and coated on the TFT 110 to the X-ray signal. Therefore, not only the power consumption is large, but the stability of the device due to the high voltage of thousands of volts, there is a problem that can not be used continuously because a lot of heat is generated.

In addition, since the photoconductor 140 must be uniformly deposited and coated on the TFT 110, there is a problem that large-scale flat panel manufacturing is impossible.

As described above, the detector using the TFT has a problem in that a large area is difficult, the cost is increased, and the sensitivity is lowered because one thin film transistor is required per pixel in the panel in addition to the difficulty of manufacturing.

Efforts have been made to overcome these problems through structural changes, but digital devices also have low X-ray conversion efficiency and degradation of image characteristics (resolution, luminance), image distortion, excessive patient exposure, and radiation exposure. As there are many technical problems such as shortening of equipment life due to the problem, its clinical application is insufficient, and development of a breakthrough digital imaging device that can compensate for these problems is urgently needed. The method using the was presented.

 PDP encapsulates a penning gas such as Xe or Ne on two substrates coated with a plurality of electrodes, and then applies a discharge voltage, and excites a phosphor formed in a predetermined pattern by ultraviolet rays generated by the discharge voltage. Refers to an imaging device that obtains text or graphics.

3 is a cross-sectional view schematically illustrating a detector for detecting an X-ray image using a conventional plasma display (PDP).

Referring to FIG. 3, a detector 200 using a plasma display (PDP) includes two substrates 210 disposed to face each other with a discharge gap and a dielectric layer 220 formed on an opposite surface side of the substrate and the substrate; A partition wall 240 formed between the dielectric layer and the dielectric layer to form a closed cell structure on the inner surface of the substrate, and formed on one side of the partition and the inner surface of the substrate, and are stimulated by radiation to display visible light. And a gas layer 260 that is filled in the sealed cell formed by the barrier ribs and the substrate and is stimulated by radiation to generate electrons.

In such a configuration, in the digital X-ray image detector using the PDP structure, when the X-ray penetrating the human body reaches the gas layer 260, the gas layer 260 generates electron and hole pairs by the X-ray. The PDP structure is used as a radiation detector substrate by utilizing the electron emission effect of radiation caused by the gas layer 260. In addition, the X-rays that do not interact with the gas layer 260 interacts with the fluorescent layer 250 positioned below the gas layer 260, and as a result, visible light is generated. Low photocathode layers (not shown) emit electrons and use them as radiation detector substrates. The emitted electrons are accelerated by an electrode located on the substrate to ionize the gas in the gas layer 260 or directly reach the electrode.

As the gas is ionized, electrons and hole pairs are generated, which are also accelerated by the electric field to ionize other gases or attract them to the collecting electrode. The collected electrons are converted into image data, and the output signals are converted into image data to generate a radiographic image.

However, the detector using the PDP has a high sensitivity of X-ray absorption on the upper substrate, so the sensitivity is low. In order to implement a bulkhead, which is an essential element of the internal structure, it is necessary to prepare a space of the gas layer using the bulkhead. The thickness of the existing barrier ribs is limited to about 100 to 200 μm, and the gas layer to be secured is basically narrowed, resulting in inherent limitations in detecting detection efficiency.

This is because when the partitions are formed more finely, the partitions are often collapsed, so that the production yield is low, and it is difficult to produce the partitions finely.

In particular, there is a quality problem due to the complicated design and low sensitivity, and evenly applying the fluorescent layer is extremely difficult, which also causes a problem that the sensitivity of the X-ray is also significantly lowered and it is difficult to secure a wider gas filling space. .

In addition, the conventional PDP type X-ray detector focuses on improving the structure and size of pixels suitable for a detector due to the structure of the PDP, but the design of the detection circuit is complicated, which makes it difficult.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and an object of the present invention is to maximize the detection efficiency of an image by using a photoconductive layer in a detector for detecting an X-ray image based on a plasma display panel (PDP), and a TFT. The present invention provides a detector for X-ray image detection, which can solve the problem of the configuration of the detection circuit by enabling the detection method to which the TFT is applied without using the?.

Specifically, it solves the problems of designing a detection circuit of a conventional PDP-based detector, a problem of lowering the detection efficiency of a detector to which TFT is applied, and generating a structural crosstalk, thereby solving a high resolution, high efficiency, large area hybrid gas. An object of the present invention is to provide a detector for detecting a x-ray image.

The present invention is a detector body for forming a sealed space in which a gas layer is formed to fill the gas inside to convert the X-ray signal into an electrical signal to solve the above problems; A plurality of electrodes formed on the body; A photoconductive layer formed in the confined space and transferring the ionized charge to the electrode; It provides a detector for detecting x-ray image, characterized in that it comprises a, increase the amount of charge that can be collected in the same discharge space to increase the collection efficiency, the detection of reading the signal amount of the intersection of each electrode without using a TFT Allows you to implement pixels using formats. This basically overcomes the problem of cross-talk generation of the conventional TFT type gas-type radiation detector, and at the same time, it is possible to provide an advantage of implementing a large-area detector by eliminating unnecessary additional manufacturing processes.

In addition, the present invention allows the above-described photoconductive layer to be disposed between the upper and lower substrates constituting the detector body.

In a more specific arrangement aspect, the photoconductive layer is disposed on an upper side of the lower substrate, and includes an X-ray detector for detecting an X-ray image, wherein the detector comprises any one selected from PbO, HgI ₂ , PbI ₂ , CdS, CdTe, and a-Se. By increasing the detection efficiency, high-resolution, high-efficiency, large-area hybrid gas type digital radiation detector can be realized.

The present invention can be implemented in the above-described photoconductive material has a thickness of 10 ~ 100㎛.

In addition, the upper and lower substrates are preferably provided with a dielectric layer.

In addition, the plurality of electrodes described above in the present invention provides a detector for detecting X-ray images, characterized in that formed of a metal of opaque material.

The metal of the opaque material described above is preferably made of any one selected from Al, In, Au, which is low in electrical resistance compared to the conventional transparent electrode, and does not need to additionally produce a bus electrode, so the process The effect is simple.

In addition, the present invention is to provide a detector for detecting the X-ray image, characterized in that the electrode includes an upper electrode formed on the upper substrate and a lower electrode formed on the lower substrate.

The present invention also provides a detector for detecting the x-ray image, characterized in that the detector body has a structure spaced apart through the support between the upper and lower substrates.

In addition, the present invention may be formed in a structure in which the upper electrode is formed inside or outside the upper substrate, and the lower electrode is formed inside or outside the lower substrate.

In addition, the present invention preferably includes the upper electrode and the lower electrode inside the dielectric layer.

In addition, the present invention can provide a detector for detecting the X-ray image, characterized in that the upper electrode and the lower electrode is formed to cross each other structure.

The present invention may further include a circuit unit for sequentially reading out and reading out a signal amount due to electrons and holes accumulated in each pixel portion where the plurality of electrodes, that is, the upper and lower electrodes intersect, are read out. The detector for image detection can be provided.

In addition, the present invention may provide a detector for detecting the x-ray image, characterized in that each pixel has a size of 50 ~ 300㎛.

In addition, the above-described dielectric in the present invention is Pb, Si, B, Al, Ba, Sr, Zn, Bi, Ti, Co, Ca, P, R, Sn oxides (PbO, SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , BaO, SrO, ZnO, Bi ₂ O ₃ , TiO ₂ , CoO, Bi series, CaO, P ₂ O ₅ , R ₂ O, SnO) or a mixture of one or more materials selected from these A detector for detecting an x-ray image may be provided.

In addition, the present invention provides a detector for detecting the X-ray image, characterized in that the electrode and the dielectric has a thickness of 1 ~ 100㎛, the width and length can be changed according to the detector size.

The present invention also provides a detector for detecting X-ray images, characterized in that the filled gas is a pure phening gas, which is a mixture of at least one selected from Xe, Kr, Ar, Ne, and He, or at least two selected from these. Can be.

In addition, the present invention is the filled gas is Xe + Ne, Kr + Ne, Ar + Ne, Xe + CO ₂ , Kr + CO ₂ , Ar + CO ₂ , Xe + CH ₄ , Kr + CH ₄ , Ar + CH _The detector for detecting x-ray images may be provided.

In addition, the present invention includes a detector body for forming a sealed space in which a gas layer is filled to convert the X-ray signal into an electrical signal and a plurality of electrodes formed in the body, the inside of the sealed space Detecting an image by using an X-ray image detection detector including a photoconductive layer which is formed and traps the ionized charge and then transfers it to the electrode, and the X-ray collides with the penning gas of the gas layer to be ionized; Applying a voltage to the electrode to transfer electrons and holes trapped in the photoconductive layer or the dielectric layer to the collecting electrode; And applying a voltage to the upper station and the lower electrode with respect to the collected electrons, and reading out a signal amount of a pixel portion which is an intersection point between the electrodes. It is possible to provide an x-ray image detection method characterized in that for detecting the image by the.

According to the present invention, the photoconductive layer is used for the X-ray image detection detector based on the plasma display panel (PDP) to maximize the detection efficiency of the image, and to use the detection method to which the TFT is applied without using the TFT. There is an effect that can solve the problem of the configuration of the solution detection circuit.

Of course, compared to the conventional X-ray image detection detector using a TFT, since no TFT, photodiode, scintillator, photoconductor, etc. are used, the manufacturing process is simple and the advantages of making a large substrate can be realized.

The present invention is a technical gist implemented using the above-described problem solving means, by applying a photoconductor layer to a PDP-based digital X-ray detector to increase absorption efficiency and at the same time without using a TFT in the detection method. The same principle of detection can be realized, enabling manufacturing without adding new process lines, and improving resolution. Specific embodiments for this will be described below with reference to the drawings.

FIG. 4 schematically illustrates a configuration of a detector for detecting an x-ray image according to the present invention (hereinafter referred to as a 'bone detector').

Referring to FIG. 4, the detector according to the present invention includes a detector body and a plurality of electrodes formed in the body, the detector body forming a sealed space in which a gas layer is formed to convert a X-ray signal into an electrical signal. It is formed in the closed space and comprises a photoconductive layer for trapping the ionized charge and then transported to the electrode.

The detector body is composed of upper and lower substrates 310a and 310b and a support 340 for supporting two substrates. In addition, the detector body includes dielectric layers 320a and 320b formed on the upper and lower substrates, upper and lower electrodes 330a and 330b surrounded by the dielectric layer, and a gas layer 360 formed inside the detector body. And it is preferable that the photoconductive layer 350 is applied to the inside of the gas layer is implemented.

The photoconductive layer 350 is basically formed inside the detector body, and more preferably, may be formed above or below the gas layer. In particular, the material constituting the photoconductive layer may be made of any one selected from PbO, HgI ₂ , PbI ₂ , CdS, CdTe, and a-Se. The photoconductive layer may be formed using a vacuum deposition method or a screen printing method. In particular, in the case of the above-described PbO material, an advantage of easily forming a photoconductive layer by a screen printing method is realized. This PDP process inevitably includes a high temperature firing process is exposed to high temperatures of more than 500 degrees. In this case, since the above-described PbO can be fired at a high temperature, the PbO is subjected to a baking process after screen printing, and thus corresponds to the most efficient material to be produced by the screen printing method.

Since the photoconductive layer 350 basically includes a barrier rib, etc. in a detector using a PDP structure, the existence of such a barrier rib can solve the problem of limitation in efficiency due to the limited space of the gas layer. This is a conventional method is limited to the partition wall 100 ~ 200㎛ has a limit that the space in which the gas layer is formed is narrowed.

The photoconductive layer may be formed in the support 340 of the present invention to several tens of micrometers or less than 10 to 100 micrometers, but more preferably 50 to 70 micrometers. It becomes possible. Of course, the thickness of the photoconductive layer in the above-described present invention may be set differently according to the internal space. That is, for example, when the internal space is limited to 200 μm or less, the thickness of the photoconductive material is about 100 μm, but when the internal space becomes larger, the photoconductor thickness may also be set larger. In a preferred embodiment of the present invention, the photoconductor thickness may be set to 10 to 100 μm, assuming that the inner space by the partition wall is about 200 μm.

Due to the presence of the photoconductive layer according to the present invention, in addition to the excellent detection efficiency, compared with the conventional TFT-type MicroGap structure, the present invention has a closed structure, so that the movement of gas or carrier to adjacent pixels This results in an effect of increasing resolution.

That is, the photoconductive layer generates charges by X-rays, and collects them, traps the collected charges, and then plays a role as a gate of a switch that is activated by UV later. That is, this structure uses a conventional TFT-based detection principle to solve the difficulty of manufacturing a conventional PDP-based detection circuit, and enables an active matrix structure to limit the current generated by the X-ray. It can be implemented in pixels.

The electrode is composed of an upper electrode 330a and a lower electrode 330b.

The upper electrode 330a may be disposed inside and outside the upper substrate. In particular, in the present exemplary embodiment, the upper electrode 330a is disposed inside the upper substrate, and the first electrode and the second electrode will be described as an example.

The first electrode and the second electrode are each formed at a predetermined distance, and each of the first electrode and the second electrode is a discharge electrode, and is preferably manufactured using a non-transparent metal without a bus electrode. Al, In, Au, etc. may be used as the non-transparent electrode material, which has a lower electrical resistance than the conventional transparent ITO electrode, and does not need to additionally manufacture a bus electrode, thereby simplifying the process. Is implemented.

In the present invention, it is preferable to form such a structure that the upper electrode and the lower electrode cross.

The dielectric layers 320a and 320b prevent short circuits between electrodes, and serve as a layer for preventing leakage current and at the same time, storing charges. In other words, if the conventional TFT is considered, it serves as a capacitor. Such dielectric layers include Pb, Si, B, Al, Ba, Sr, Zn, Bi, Ti, Co, Ca, P, R, Sn oxides (PbO, SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , BaO, SrO , ZnO, Bi ₂ O ₃ , TiO ₂ , CoO, Bi-based, CaO, P ₂ O ₅ , R ₂ O, SnO), or a mixture of one or more materials selected from among them. Of course, the thickness of the electrode and the dielectric layer may be variously modified according to the intention of the user, preferably may be formed of 1 ~ 100㎛.

The gas layer 360 according to the present invention may use pure fanning gas. For example, any one selected from Xe, Kr, Ar, Ne, and He, or two or more gases selected from these may be applied. Examples of gases in the case of mixing include Xe + Ne, Kr + Ne, Ar + Ne, Xe + CO ₂ , Kr + CO ₂ , Ar + CO ₂ , Xe + CH ₄ , Kr + CH ₄ , Ar + CH ₄ Etc. may be applied.

Hereinafter will be described the operation process appearing on one pixel of the detector according to the present invention. (The numerals in the drawings below correspond to those in FIG. 4).

As shown in FIG. 5, the X-rays penetrating the human body from the outside pass through the inside of the detector to meet the gas layer 360, and in this case, charges are generated due to ionization of the gas layer. That is, the X-rays penetrating the human body interact with the photoconductive layer positioned below the gas layer, and generate charges inside the photoconductive layer 350. The charge thus generated must be ionized through the gas layer and the photoconductive layer and immediately moved to the electrode, but due to the dielectric constant of the dielectric layer and the photoconductive layer itself, trapping of electrons and holes occurs.

Subsequently, as shown in FIG. 6, the charges generated in the photoconductive layer 360 are moved to both ends of the photoconductive layer by voltage, and some of them are lost or partially trapped inside the photoconductive layer. At this time, the rate of charge generation is constantly increased according to the applied voltage, gas pressure, and thickness of the photoconductive layer.

Referring to FIG. 7, FIG. 7 schematically illustrates a plasma serving as a switch of each pixel in the method of operating the detector. That is, in FIG. 6, the charge trapped in the photoconductor layer is discharged and activated.

Specifically, electrons and holes trapped in the photoconductive layer or the dielectric layer apply a voltage to the inside of the PDP, and when the interior is plasma discharged, the UV of the plasma is incident into the photoconductor, and each of the photoconductor The electrons and holes confined by the internal traps sequentially and independently for each pixel are reactivated and moved to the collecting electrode (lower electrode; third electrode). In this way, the collected charges can be read out separately by the signals stored in each pixel.

That is, as described above, the collected electrons and charges are again applied with voltages to the upper and lower electrodes, respectively, and the signal amounts are read in a manner similar to that using the detection mode of the TFT that reads the signal amounts at the intersections between the electrodes. In other words, without using TFT, the photoconductive layer is used to perform the functions of the capacitor and the switch as it is, and one pixel is realized by the Avtive Matrix method.

Referring to FIG. 8, (a) and (b) of FIG. 8 read the trapped charges without applying a voltage. It can be seen that the detected charge amount varies depending on the X-ray condition. Specifically, the graph shown in FIG. 8 shows a signal generated when the X-ray is irradiated with only a voltage through an electric field applying electrode and irradiated with X-rays, and then only X-rays are irradiated without voltage. In other words, the charge trapped inside is again activated by X-ray, and also changes according to the X-ray irradiation condition, indicating that the trapped charge can serve as a detector (a distinction between high and low amounts of signal). It can be said to be disproved. This is because if the X-ray conditions change and they react constantly, they will not function as detectors.

Referring to FIG. 9, FIG. 9A illustrates a case where there is no photoconductor, and FIG. 9B illustrates a measure of the amount of charge when the photoconductor is present. It can be seen that is about 1.5 times larger.

After detecting one image signal by the above-described process, a new re-photographing is performed to detect the previous image signal. In order to perform the reset process, the entire process of the detector is discharged. Therefore, the reset operation can be implemented remarkably easily.

In more detail, the above-mentioned reset process is described in detail. In the photoconductor, the ionized charge is trapped inside, and when the X-ray is to be re-photographed, a ghost image or an image lag phenomenon ( The image overlapping phenomenon occurs.

In the present invention, as a solution to the afterimage phenomenon, after activating all the pixels, a strong light is applied to activate the internal trap charge, connect to the ground, extinguish it, and retake the work. In the case of A-Se, there is a separate light inside the detector. The light is emitted from this light and reset (this is the direct method, not the indirect method).

That is, through the detector according to the present invention, even after reading the trapped charges, charges will remain unbalanced for each pixel. When you get an image, you can implement a way to get a cleaner image.

In the detailed description of the invention as described above, specific embodiments have been described. However, many modifications are possible without departing from the scope of the invention. The technical spirit of the present invention should not be limited to the described embodiments of the present invention, but should be determined not only by the claims, but also by those equivalent to the claims.

1 is a schematic diagram showing a detector of a conventional TFT type MicroGap method.

2A and 2B are cross-sectional views schematically illustrating detectors for detecting X-ray images implemented in conventional indirect and direct methods, respectively.

3 is a cross-sectional view schematically illustrating a detector for detecting an X-ray image using a conventional plasma display (PDP).

4 is a schematic cross-sectional view of a detector for detecting an x-ray image according to an exemplary embodiment of the present invention.

5 to 7 are operation state diagrams of the X-ray image detection detector according to an embodiment of the present invention.

8 is a graph showing the amount of trapped charge without applying a voltage.

9A and 9B are graphs comparing the magnitudes of charges with and without photoconductors.

Claims (19)

In the X-ray detector, A detector body defining a sealed space in which gas is filled to form a gas layer for converting an X-ray signal into an electrical signal; A plurality of electrodes formed on the body; A photoconductive layer formed in the confined space and transferring the ionized charge to the electrode; X-ray image detection detector comprising a. The method according to claim 1, The photoconductive layer is a detector for detecting x-rays, characterized in that disposed between the upper and lower substrates constituting the detector body. The method according to claim 1, The photoconductive layer is disposed on an upper side of the lower substrate, X-ray image detection detector, characterized in that made of any one selected from PbO, HgI ₂ , PbI ₂ , CdS, CdTe, a-Se. The method according to claim 3, The photoconductive material is a detector for detecting x-ray images, characterized in that the thickness is applied 10 ~ 100㎛. The method according to claim 3, Detectors for detecting X-ray images, characterized in that the upper and lower substrates have a dielectric layer. The method according to claim 2, The plurality of electrodes are detectors for detecting x-ray images, characterized in that formed of a metal of opaque material. The method according to claim 6, The opaque material of the X-ray image detection detector, characterized in that made of any one selected from Al, In, Au. The method according to claim 6, And the electrode includes an upper electrode formed on the upper substrate and a lower electrode formed on the lower substrate. The method according to claim 8, The detector body is X-ray image detection detector, characterized in that having a structure spaced apart through the support between the upper and lower substrates. The method according to claim 8, And the upper electrode is formed inside or outside the upper substrate, and the lower electrode is formed inside or outside the lower substrate. The method according to claim 10, And an upper electrode and a lower electrode disposed inside the dielectric layer. The method according to claim 11, The detector for detecting the x-ray image, wherein the upper electrode and the lower electrode are formed to cross each other. The detector of claim 12, wherein the detector for detecting X-ray images is  And a circuit unit for sequentially reading out and reading out signal amounts due to electrons and holes accumulated in respective pixel portions where the upper and lower electrodes intersect. The method according to claim 13, Each pixel has a size of 50 ~ 300㎛ X-ray detector for detecting the image. The method according to claim 5, The dielectric may be Pb, Si, B, Al, Ba, Sr, Zn, Bi, Ti, Co, Ca, P, R, Sn, oxides (PbO, SiO ₂ , B ₂ O ₃ , Al ₂ O ₃ , BaO, SrO, ZnO, Bi ₂ O ₃ , TiO ₂ , CoO, Bi series, CaO, P ₂ O ₅ , R ₂ O, SnO), or X-ray image detection detector, characterized in that consisting of a mixture of one or more materials selected from among these. The method according to claim 5, The electrode and the dielectric is a thickness of 1 ~ 100㎛, the width and length detector for X-ray image detection, characterized in that it can be changed according to the detector size. The method according to claim 1, The filled gas is a pure phening gas, Xe, Kr, Ar, Ne, He, X-ray image detection detector, characterized in that any one selected from a mixture of two or more of these selected from among them. The method according to claim 1, The filled gas is any one selected from Xe + Ne, Kr + Ne, Ar + Ne, Xe + CO ₂ , Kr + CO ₂ , Ar + CO ₂ , Xe + CH ₄ , Kr + CH ₄ , Ar + CH ₄ X-ray image detection detector, characterized in that. A detector body forming a sealed space in which a gas layer is formed to convert an X-ray signal into an electrical signal, and a plurality of electrodes formed in the body, the ionized charge being formed in the sealed space. Detecting the image using the detector for detecting the x-ray image of claim 1 including a photoconductive layer for trapping and transporting to the electrode, X-rays collide with the panning gas of the gas layer to be ionized; Applying a voltage to the electrode to transfer electrons and holes trapped in the photoconductive layer or the dielectric layer to the collection electrode; And Applying a voltage to the upper electrode and the lower electrode with respect to the collected electrons and reading out a signal amount of a pixel portion which is an intersection point between the electrodes; X-ray image detection method characterized in that for detecting the image by.

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