KR20100005058A - Method of fabricating magnetic device - Google Patents

Abstract

A magnetic film is etched in a plasma atmosphere using a non-organic film mask to produce a magnetic element. The plasma atmosphere is formed from at least one gasifying compound selected from the group consisting of ethers, aldehydes, carboxylic acids, esters, and diones. A magnetic film or diamagnetic film containing at least one metal selected from the group consisting of the elements in Groups 8, 9, and 10 of the Periodic Table is etched using a non-organic-material mask in the plasma atmosphere. At least one gas selected from the group consisting of oxygen, ozone, nitrogen, HO, NO, NO, and COcan be added as a plasma-atmosphere gas to the gasifying compound. The etching rate and etching ratio were satisfactory.

Description

Magnetic device manufacturing method {Method of Fabricating Magnetic Device}

The present invention relates to a method of manufacturing a magnet device having a dry etching process. More specifically, the present invention relates to a method of manufacturing a magnetic device having a process of performing dry etching at a high etching rate and a high selectivity when fine processing of the magnetic thin film is performed.

Magnetic random access memory (MRAM), an integrated magnetic memory, has attracted interest as an infinitely rewritable memory having an integrated density similar to DRAM and a high speed similar to SRAM. Furthermore, magneto-resistive devices of similar construction, such as thin film magnetic heads, magnetic sensors and giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR), are rapidly being developed.

Until now, ion milling has been frequently used in the etching process of magnetic materials. However, since ion milling is a physical sputtering etch, it is difficult to make choices for various materials for mask use, resulting in a problem that the bottom of the etched material is tapered. Thus, the current situation is that ion milling is not suitable for large-capacity MRAM fabrication, it is difficult to uniformly treat a large area (300 mm) substrate, and production cannot be high.

Instead of such ion milling, techniques cultivated in the semiconductor industry have been introduced.

Among them, a reactive ion etching (RIE) technique is expected that ensures uniformity on a large area (300 mm) substrate and is excellent in micromachining characteristics.

However, even with the RIE technology widely used in the semiconductor industry, the reactivity with magnetic materials such as FeNi, CoFe, and CoPt is poor, making it difficult to process without causing etching residue and sidewall deposition.

As a method of manufacturing a magnetic element used in the dry etching process of a magnetic thin film for the selective etching of a magnetic material of transition elements, Japanese Patent Application Laid-open No. H8-253881 is a reaction gas for dry etching and ammonia (NH ₃ ) and A carbon monoxide (CO) gas to which a nitrogen-containing compound gas such as an amine gas is added is proposed: Japanese Patent Application Laid-Open No. 2005-42143 discloses at least one etching gas for dry etching of a magnetic material using an inorganic material as a mask. An alcohol having a hydroxyl group is proposed; Japanese Patent Application Laid-Open No. 2005-268349 proposes a gas containing at least methane and oxygen as a dry etching gas for magnetic materials of difficult-to-etch elements such as Pt and Ir.

SUMMARY OF THE INVENTION An object of the present invention is to provide a dry etching process based on high speed etching and high selectivity, wherein an inorganic material such as a metal raw material selected from a metal group consisting of Groups III, IV, V and VI in the periodic table Alternatively, when a mask material (non-organic material mask) made of a material formed of these metal atoms and nonmetal atoms is used, no post-corrosion treatment or corrosion treatment is required.

Still another object of the present invention is to provide a method of manufacturing a magnetic device using the dry etching process described above.

In order to achieve the above object, the present invention firstly masks an inorganic material in a plasma atmosphere generated using at least one kind of a compound selected from a group of gasified compounds composed of ether, aldehyde, carboxylic acid, ester, dione and amine. Etching a magnetic film or a diamagnetic film comprising at least one of a metal selected from the group consisting of Group VIII, Group VIII, and Group VIII in the periodic table; Next, in the plasma atmosphere generated using at least one selected from the group of gasified compounds composed of ether, aldehyde, carboxylic acid, ester, dione, and amine, the group of groups in the periodic table using a mask of inorganic material, At least one type of metal selected from the group consisting of Group VIII, and group VIII, and at least one of a gas selected from a gas group consisting of Oxygen, Ozone, Nitrogen, H ₂ O, N ₂ O, NO ₂ , and CO ₂ A method of manufacturing a magnetic device comprising the step of etching a magnetic film or a diamagnetic film containing a kind.

In the production method of the present invention, at least one kind of ether selected from the group consisting of dimethyl ether, diethyl ether and ethylene oxide may be cited as the ether.

In the production method of the present invention, at least one kind of aldehyde selected from the group consisting of formaldehyde and acetaldehyde may be cited as the aldehyde.

In the production method of the present invention, at least one kind of carboxylic acid selected from the compound group consisting of formic acid and acetic acid can be cited as the carbonic acid.

In the preparation method of the present invention, at least one kind of ester selected from compounds consisting of ethyl chloroformate and ethyl acetate can be cited as ester.

In the production method of the present invention, at least one kind of amine selected from compounds consisting of dimethylamine and triethylamine can be cited as the amine.

In the preparation method of the present invention, at least one kind of dione selected from compounds consisting of tetramethylheptadione, acetyl acetone, and hexafluoroacetyl acetone is mentioned as dione. Can be.

The mask material (inorganic material mask) used in the present invention is a metal atom material selected from the group of metals composed of Groups III, IV, V, and VI in the periodic table, for example, Ta, Ti, Al, or Si, or It is a non-organic material composed of a single layer film or a laminated film formed of a material prepared by mixing a mixed material of the same metal atoms and non-metal atoms, for example, a metal such as Ta, Ti or Al, or a non-metal such as Si, or these metals or An inorganic mask material composed of a single layer film or a laminated film formed of an oxide or nitride of a nonmetal can be used.

As the inorganic mask material used in the present invention, for example, a single layer film or a laminated film of Ta, Ti, Al or Si can be used as the mask material. Alternatively, monolayers of nitrides and oxides of Ta, Ti, Al or Si such as Ta oxide, Ti oxide, Al oxide such as Al ₂ O ₃ , Si oxide such as SiO ₂ , and nitrides such as TaN, TiN, SiN A film or laminated film can be used as the mask material. When the single layer film mentioned above is used, the thickness is 2-300 nm, Preferably it is 15-30 nm. When the above-mentioned laminated film is used, the laminated thickness is 2 to 300 nm, preferably 15 to 30 nm.

In the manufacturing method according to the present invention, a magnetic film or diamagnetic film composed of at least one of metals selected from the group consisting of Groups III, IV, V, and VI in the periodic table to be subjected to the etching process, the FeN film, NiFe film, CoFe film, CoFeB film, PtMn film, IrMn film, CoCr film, CoCrPt film, NiFeCo film, NiFeMo film, CoFeB film, FeMn film, CoPt film, NiFeCr film, CoCr film, CoPd film, CoFeB film or NiFeTb film Can be used. These magnetic films or diamagnetic films may be ferromagnetic or soft magnetic. The content of the magnetic substance contained in these magnetic films or diamagnetic films is 10 atomic% or more, preferably 50 atomic% or more, and is not limited to these values.

In the manufacturing method according to the present invention, the magnetic film or the diamagnetic film subjected to the etching process may be a single layer film or a laminated film. When a single layer film is used, the thickness thereof is 2 to 300 nm, preferably 15 to 30 nm. When the above-mentioned laminated film is used, the laminated thickness is 2 to 300 nm, preferably 15 to 30 nm.

In the production method according to the present invention, the etching temperature during the magnetic film or diamagnetic film etching is preferably maintained in the range of 250 ° C or less. If the temperature exceeds 250 ° C., undesirable thermal damage is given to the magnetic film. Preferred temperature range of the present invention is 20 to 100 ℃.

Also in the production process according to the invention, the vacuum during etching is preferably in the range between 0.05 and 10 Pa. Within this pressure range, the magnetic element can be anisotropically treated by the formation of high density plasma.

In the production method according to the present invention, the gasification compound described above in the range that the oxide gas or nitride gas such as oxygen, ozone, nitrogen, H ₂ O, N ₂ O, NO ₂ , and CO ₂ does not exceed 50 atomic%. Can be added to.

Moreover, in this invention, it is preferable to add an inert gas to the gasification compound mentioned above in the range which does not exceed 90 atomic%. As the inert gas, Ar, Ne, Xe, Kr and the like can be used. At this time, a mixed gas of the above-described addition gas and inert gas may also be used. At this time, the amount of the mixed gas is preferably in the range of the above-mentioned amount.

According to the manufacturing method of the present invention, when the above-described addition gas or inert gas is added to the above-mentioned gasification compound within the above-mentioned range, the etching rate can be higher, and the selectivity to the mask can be greatly increased. However, when an additive gas of 50 atomic% or more is used, a decrease in etching rate occurs, and at the same time, a decrease in selectivity to the mask also occurs.

 In the dry etching method used in the manufacturing method of the present invention, when the magnetic material is etched using a mask material composed of an inorganic material, no post-corrosion treatment is required, and no corrosion resistance to the etching apparatus is considered. According to the present invention, as described above, a high etching rate and a large selectivity can be achieved, and by the high etching rate and a large selectivity, high micromachining of a magnetic thin film composed of a single layer film or a laminated film is realized. Can be. Thus, the production of highly integrated MRAM can be greatly improved.

1A is a schematic structural diagram of an etching apparatus used in the method of the embodiment of the present invention.

FIG. 1B is a top view of the apparatus shown in FIG. 1A.

2A is a schematic cross-sectional view of a wafer (magnetic layer layered substrate) before the start process.

FIG. 2B is a schematic cross sectional view when a Ta mask is fabricated on the wafer shown in FIG. 2A.

FIG. 2C is a schematic cross-sectional view showing an example of a magnetic thin film of TMR manufactured by etching using the Ta mask shown in FIG. 2B.

3 is a schematic cross-sectional view showing another example of a magnetic thin film of TMR according to the present invention.

Figure 4 is a vertical cross-sectional view showing the basic structure of the TMR cross section prepared in the present invention.

5 is a diagram showing a change in the resistance value of the TMR cross section prepared in the present invention.

Example 1

1 is a schematic diagram of an etching apparatus having an ICP (inductively coupled plasma) plasma source. In Example 1, acetic acid is used as a gasifying compound, a mixed gas of acetic acid and oxygen gas is used as the etching gas, and TMR as shown in FIGS. 2A and 2B, using the apparatus shown in FIG. The device is etched. 2C and 3 show two examples of TMR produced using the manufacturing method according to the present invention. Figure 2a shows the laminated structure before the etching process used in the present invention. This is a wafer 9 shown in Fig. 1A, in which a magnetic material layer or the like is laminated on a substrate made of quartz or the like and is subject to etching.

In Fig. 2A, a laminated ferromagnetic film which is a fin layer composed of a Ta film of 201, an Al film of 202, a Ta film of 203, a thickness of 1 nm to 20 nm (preferably 5 nm) of a soft magnetic CoFe film and a PtMn film of antiferromagnetic film, 204, an insulating film made of Al ₂ O ₃ (thickness 0.1 nm to 10 nm, preferably 0.5 nm to 2 nm) is made of a CoFe film having a thickness of 205 and a thickness of 1 nm to 20 nm (preferably 5 nm). The soft magnetic film serving as the free layer is indicated by 206, the soft magnetic film composed of NiFe film, 207, the mask made of Ta, 208, and the pattern photoresist film 209.

4 shows a basic structure of a TMR device manufactured by the manufacturing method according to the present invention. The basic structure of the TMR 401 is that both surfaces of the insulating layer 402 (corresponding to the Al ₂ O ₃ insulating film 205 in FIG. 2) are laminated films of the NiFe film 207 and the CoFe film 206 in FIG. 2. A ferromagnetic layer 403 and a ferromagnetic layer 404 (corresponding to the CoFe / PtMn film 204 in FIG. 2). In the ferromagnetic layers 403 and 404, arrows 403a and 404a indicate the magnetization directions, respectively. 5A and 5B are diagrams showing a resistance state in the TMR 401 when a voltage V is applied from the power source 405 to the TMR 401. The TMR 401 has a characteristic of changing the resistance value corresponding to the magnetization state in each of the ferromagnetic layers 403 and 404 according to the applied voltage V. FIG. In particular, as shown in FIG. 5A, when the magnetization directions in the ferromagnetic layers 403 and 404 are the same, the resistance value of the TMR 401 is minimized; As shown in FIG. 5B, when the magnetization directions in the ferromagnetic layers 403 and 404 are opposite to each other, the resistance value of the TMR 401 is maximized. The minimum resistance value and the maximum resistance value of the TMR 401 are represented by Rmin and Rmax, respectively. Here, in general, a CIP (Current-in-Plane) type structure in which the sensing current is introduced in parallel to the film surface of the device and a CPP (Current-Perpendicular to Plane) type in which the sensing current is introduced perpendicular to the thin film surface of the device. 4 and 5 show an example of a CPP type magnetoresistive element.

FIG. 2B shows a state after the Ta film is etched using the pattern photoresist film 209 and CF ₄ gas, which is an etching gas, shown in FIG. 1. In the etching process of the Ta film 208, the apparatus shown in FIG. 1 was used. The vacuum vessel 2 shown in FIG. 1A is exhausted using the exhaust system 21, and a gate valve (not shown) is used to introduce the wafer 9 having the laminated magnetic film shown in FIG. 2A into the vacuum vessel 2. Is held in the substrate holder 4 and maintained at a predetermined temperature using a temperature control device 41. Then, the gas introduction system 3 is operated so that a predetermined flow rate of the etching gas CF ₄ from the cylinder storing the CF ₄ gas not shown in FIG. 1A to the vacuum vessel 2 through the pipe, the valve and the flow controller. Introduce. The introduced etching gas is diffused into the dielectric wall vessel 11 through the vacuum vessel 2. Here, the plasma source device 1 is operated. The plasma source device 1 includes a dielectric wall container 11 sealedly connected so that an internal space is in communication with the vacuum container 2, and a 1-turn antenna generating an induced magnetic field in the dielectric wall container 11. 12, a plasma high frequency power source 13 connected to the antenna 12 by a transmission channel 15 through a matching box (not shown) for generating a high frequency power (power source) supplied to the antenna 12. And an electromagnet 14 for generating a predetermined magnetic field in the dielectric wall container 11. When the high frequency generated by the high frequency power source for the plasma 13 is supplied to the antenna 12 by the transmission channel 15, a current flows through the 1-turn antenna 12, and as a result, the plasma is deposited on the dielectric wall container 11 Is formed in the

The structure of the device from above is shown in FIG. 1B. A plurality of magnets for the side wall 22 are disposed outside the side wall of the vacuum vessel 2, and arranged in the circumferential direction so that the magnetic poles on the side facing the side wall of the vacuum vessel 2 are different from the adjacent magnets, so that the vacuum vessel 2 The circumferentially sharp magnetic field is successively formed along the inner surface of the side wall of the c) to prevent diffusion of plasma on the inner surface of the side wall of the vacuum vessel 2. At this time, the high frequency power supply for the bias 5 is simultaneously operated to supply a self bias voltage, which is a negative DC current voltage, to the wafer 9 to be etched, and to control ion incident energy from the plasma to the surface of the wafer 9. All. The plasma formed as described above diffuses from the dielectric wall vessel 11 into the vacuum vessel 2 and reaches near the surface of the wafer 9. At this time, the Ta film not coated with the photoresist (PR) film is exposed to the plasma, and is etched by the etching gas CF ₄ , and the Ta mask 208 is removed from the Ta film in the wafer 9 shown in FIG. 2B. Is formed on the phase.

The etching conditions for the Ta film by CF ₄ described above using the photoresist film 209 as a mask are as follows:

<Etching Condition>

Etching Gas (CF ₄ ) Flow Rate: 326mg / min (50 sccm)

Source power: 500 W

Bias Power: 70 W

Pressure in vacuum vessel (2): 0.8 Pa

The temperature of the substrate holder 4: 40 ° C.

Then, after removing the photoresist 209, acetic acid gas and oxygen gas are used as etching gas, and Ta formed by the above-described process is NiFe film 207, CoFe film 206, Al2O3 film 205, and An etching process used as a mask material for etching the CoFeB / PtMn film 204 was performed to produce the magnetic film shown in Fig. 2C. In the above-described process, the apparatus shown in FIG. 1 is also used except that CF ₄ gas is used instead of a mixed gas composed of acetic acid gas and oxygen gas. The etching conditions at this time are described below. At this time, the etching rate (nm / min) was measured using the conventional method. The result was 30 nm / min. Further, using a conventional method, the selectivity ratio of the laminated film to the Ta film 203 (the etching rate of the laminated films 204 to 207 / the etching rate of the Ta film 203) of the films 204 to 207 was measured. The result was 10 times.

<Etching Condition>

Acetic acid flow rate: 15 sccm (40.2mg / min)

Oxygen Flow Rate: 5 sccm (7.1mg / min)

Source power: 1000 W

Bias Power: 800 W

Pressure in vacuum vessel (2): 0.4 Pa

The temperature of the substrate holder 4: 40 ° C.

At this time, by operating the gas introduction system 3, a predetermined flow rate of the etching gas (acetic acid) and oxygen gas is transferred from the vessel 31, the valve 33, and the flow rate from the container 31 shown in FIG. 1 in which acetic acid is stored. It was introduced into the vacuum vessel 22 through the controller 34, and etching was performed. After etching in this process, the structure shown in FIG. 2C was confirmed.

[Examples 2 to 20 and Comparative Example 1]

The device shown in FIG. 2C is the same as in FIG. 1 except that the etching gas and etching rate and selectivity shown in Table 2 are measured instead of the etching gas composed of acetic acid gas and oxygen gas used in Example 1 described above. Is formed. The results are shown in Table 1 below. Etch rates shown in Table 1 are shown as ratios when the etching rate in Example 1 is "1" and the selectivity is "1".

Example Etching Gas (Flow) Etching speed Selectivity 2 Dimethyl ether (15 sccm, 30.9mg / min) 1.1 0.8 3 Dimethyl ether (15 sccm, 30.9 mg / min) and oxygen (5 sccm, 7.1 mg / min) 1.1 1.2 4 Ethylene oxide (15 sccm, 29.6 mg / min) and oxygen (5 sccm, 7.1 mg / min) 1.0 0.9 5 Formaldehyde (15 sccm, 20.1mg / min) 0,9 0.9 6 Formaldehyde (15 sccm, 20.1 mg / min) and oxygen (5 sccm, 7.1 mg / min) 1.0 1.1 7 Formaldehyde (15 sccm, 20.1 mg / min), oxygen (20 sccm, 35.7 mg / min) and argon (5 sccm, 7.1 mg / min) 1.2 0.9 8 Acetic acid (15 sccm, 40.2 mg / min) 0.8 0.9 9 Acetic acid (15 sccm, 40.2 mg / min), oxygen (5 sccm, 7.1 mg / min) and argon (20 sccm, 35.7 mg / min) 1.3 0.9 10 Ethyl acetate (15 sccm, 59.0 mg / min), oxygen (5 sccm, 7.1 mg / min) and argon (20 sccm, 35.7 mg / min) 1.1 0.9 11 Dimethyl amine (15 sccm, 67.1 mg / min) and oxygen (5 sccm, 7.1 mg / min) 1.2 0.8 12 Dimethyl amine (15 sccm, 67.1 mg / min), oxygen (1 sccm, 1.4 mg / min) and argon (20 sccm, 35.7 mg / min) 1.2 0.8 13 Acetyl Acetone (15 sccm, 67.0 mg / min) and Oxygen (5 sccm, 7.1 mg / min) 1.1 0.8 14 Acetyl Acetone (15 sccm, 67.0 mg / min), Oxygen (5 sccm, 7.1 mg / min) and Argon (20 sccm, 35.7 mg / min) 1.1 0.6 15 Dimethyl ether (15 sccm, 30.9 mg / min), NO ₂ (5 sccm, 10.3 mg / min) and argon (20 sccm, 35.7 mg / min) 1.1 0.9 16 Dimethyl ether (15 sccm, 30.9 mg / min), N ₂ (5 sccm, 6.3 mg / min) and argon (20 sccm, 35.7 mg / min) 1.2 0.7 17 Dimethyl ether (15 sccm, 30.9 mg / min), H ₂ O (5 sccm, 4.0 mg / min) and argon (20 sccm, 35.7 mg / min) 1.2 0.8 18 Dimethyl ether (15 sccm, 30.9 mg / min), CO ₂ (5 sccm, 9.8 mg / min) and argon (20 sccm, 35.7 mg / min) 1.1 0.7 19 Dimethyl ether (15 sccm, 30.9 mg / min), ozone (3 sccm, 6.4 mg / min) and argon (25 sccm, 44.6 mg / min) 1.3 0.8 20 Acetic acid (15 sccm, 40.2 mg / min), ozone (3 sccm, 6.4 mg / min) and argon (25 sccm, 44.6 mg / min) 1.3 0.9 Comparative Example 1 Methane (15 sccm, 10.8 mg / min) and oxygen (5 sccm, 7.1 mg / min) 0.3 0.8

As mentioned above, the dry etching method used in the manufacturing method according to the present invention unexpectedly showed a significant effect.

[Examples 21 to 25 and Comparative Example 2]

The elements shown in FIG. 2 were formed in the same manner as in Examples 1, 9, 3, 6 and 13 except that the flow rate of the etching gas was changed in the above-described embodiment, and the etching rate and the selectivity were measured. The results are shown in Table 2. Etch rates shown in Table 2 are shown as ratios when the etching rate is "1" and the selectivity is "1" in Example 1. FIG.

Example Etching Gas (Flow) Etching speed Selectivity 21 Acetic acid (25 sccm, 53.6 mg / min) and oxygen (10 sccm, 14.2 mg / min) 0.8 0.8 22 Acetic acid (25 sccm, 53.6 mg / min) oxygen (10 sccm, 14.2 mg / min) and argon (30 sccm, 53.5 mg / min) 0.7 0.9 23 Diethyl ether (20 sccm, 41.2 mg / min) and oxygen (10 sccm, 14.2 mg / min) 0.8 1.1 24 Formaldehyde (20 sccm, 26.8 mg / min) and oxygen (10 sccm, 14.2 mg / min) 0.8 1.1 25 Acetyl Acetone (20 sccm, 89.3 mg / min) and Oxygen (10 sccm, 14.2 mg / min) 0.7 1.1 Comparative Example 2 Methane (20 sccm, 14.4 mg / min) and oxygen (10 sccm, 14.2 mg / min) 0.5 0.7

Among the ethers, aldehydes, carboxylic acids, diones and amines, ethers and aldehydes are not corrosive and have a particularly safe advantage.

While several embodiments of the present invention and comparative test examples have been described, the present invention is not limited to the above-described embodiments, but may be modified for various embodiments within the technical scope identified from the description of the claims. For example, the etching apparatus is not limited to the ICP type plasma apparatus having the 1-turn antenna shown in FIG. Plasma devices, microwave type plasma devices and the like can be used. Further, even in the case where the magnetic material using the inorganic material as the mask material is etched and the magnetic material is TMR, the configuration of the TMR is not limited to the configuration shown in FIG. In addition, the present invention is not limited to the above-described TMR but may also be applied to GMR. Moreover, as shown in Fig. 3, a process in which the insulating film 205 is used as the etching apparatus shown in Fig. 2A can be used.

Claims (20)

Forming a plasma atmosphere generated using at least one kind of a compound selected from the group of gasified compounds consisting of ether, aldehyde, carboxylic acid, ester, dione and amine, A method of manufacturing a magnetic element comprising etching a magnetic film or a diamagnetic film containing at least one of metals selected from Groups VIII, Group VIII, and Group VIII in the periodic table using a mask of an inorganic material. The method of claim 1, The ether is at least one kind of ether selected from the group consisting of dimethyl ether, diethyl ether and ethylene oxide. The method of claim 1, The aldehyde is a method of manufacturing a magnetic device is at least one kind of aldehyde selected from the group consisting of formaldehyde and acetaldehyde. The method of claim 1, Wherein said carboxylic acid is at least one kind of carboxylic acid selected from the group consisting of formic acid and acetic acid. The method of claim 1, The ester is a method of manufacturing a magnetic device is at least one kind of ester selected from a compound consisting of ethyl chloroformate and ethyl acetate. The method of claim 1, The amine is a method of manufacturing a magnetic device is at least one kind of amine selected from a compound consisting of dimethylamine and triethylamine. The method of claim 1, The dione is at least one kind of dione selected from a compound consisting of tetramethyl heptadione, acetyl acetone and hexafluoroacetyl acetone. The method of claim 1, The magnetic device is a method of manufacturing a magnetic device TMR. The method of claim 1, And the plasma atmosphere is formed by adding at least one kind of gas selected from a gas group consisting of oxygen, ozone, nitrogen, H ₂ O, N ₂ O, NO ₂ , and CO ₂ to the gasification compound. The method of claim 9, The ether is at least one kind of ether selected from the group consisting of dimethyl ether, diethyl ether and ethylene oxide. The method of claim 9, The aldehyde is at least one kind of aldehyde selected from the group consisting of a compound consisting of formaldehyde and acetaldehyde. The method of claim 9, Wherein said carboxylic acid is at least one kind of carboxylic acid selected from the group consisting of formic acid and acetic acid. The method of claim 9, Wherein said ester is at least one kind of ester selected from the group consisting of ethyl chloroformate and ethyl acetate. The method of claim 9, The amine is a method of manufacturing a magnetic device is at least one kind of amine selected from the group consisting of dimethylamine and triethylamine. The method of claim 9, The dione is at least one kind of dione selected from the compound consisting of tetramethyl heptadione, acetyl acetone and hexafluoroacetyl acetone. The method of claim 1, The non-organic material mask may include a magnetic material including at least one thin film made of a metal atom material selected from a metal group consisting of Groups III, IV, V, and VI in the periodic table or a mixture of such metal atoms and nonmetal atoms. Method of manufacturing the device. The method of claim 16, The inorganic material mask is a method of manufacturing a magnetic device comprising at least one thin film composed of Ta, Ti or Al metal, nonmetal, such metal or nonmetal oxide, or such metal or nonmetal nitride. The method of claim 17, The nonmetal is Si manufacturing method of a magnetic device. The method of claim 1, And the magnetic film is a laminated magnetic film formed by laminating a magnetic film and a nonmagnetic film. The method of claim 1, The magnetic device is a method of manufacturing a magnetic device TMR.

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