KR20090122815A - Manufacturing method for display - Google Patents

Abstract

PURPOSE: A manufacturing method of a display device for reducing the load of a dry etching process is provided to improve the performance of the device by safely patterning metal layer coated on an oxide semiconductor layer. CONSTITUTION: A gate(102) is formed on a first substrate. A first insulating layer(103) is formed on the gate. An oxide semiconductor layer(104) is formed on the first insulating layer. A first metal layer(105) is formed on the oxide semiconductor layer. A second metal layer(106) is formed on an ohmic contact layer. The second metal layer is etched to a wet type. A source and drain etches the first metal layer.

Description

Manufacturing Method for Display

The present invention relates to a method of manufacturing a display device.

With the development of information technology, the market for a display device, which is a connection medium between a user and information, is growing. Accordingly, flat panel displays (FPDs), such as liquid crystal displays (LCDs), organic light emitting diodes (OLEDs), and plasma display panels (PDPs), may be used. Usage is increasing. Among them, a liquid crystal display device capable of realizing high resolution and capable of large size as well as small size is widely used.

Some of the display devices as described above may be driven by transistors formed in a matrix on a substrate to represent an image. The transistor may include a gate, a semiconductor layer, a source and a drain.

On the other hand, when the semiconductor layer included in the transistor is formed of an oxide semiconductor layer, there are many restrictions on the metal material used as the source and drain on the thin film. For this reason, conventionally, molybdenum (Mo) was used as a source and drain metal material. In order to form the source and drain, a metal material must be formed on the oxide semiconductor layer and patterned by an etching method.

In this case, when mixed acid or general acid is used to etch a metal material, damage occurs to an oxide semiconductor layer disposed below, and thus, dry etching is mainly used. However, even when the dry etching method is used, the oxide semiconductor layer is not damaged and is safely patterned. Therefore, improvement measures are required.

An object of the present invention for solving the above-mentioned problems of the background technology, by forming a source and drain by safely patterning a metal layer located on the oxide semiconductor layer, and at the same time to form an ohmic contact layer to lower the contact resistance performance of the device It is to provide a method of manufacturing a display device which can be improved.

The present invention as a means for solving the above problems, forming a gate on the first substrate; Forming a first insulating film on the gate; Forming an oxide semiconductor layer on the first insulating film; Forming a first metal layer on the oxide semiconductor layer; Forming a second metal layer on the first metal layer; Wet etching the second metal layer; And dry etching the first metal layer to form a source and a drain.

The first metal layer may include molybdenum (Mo) alloy, chromium (Cr), or indium tin oxide (ITO).

The second metal layer may include molybdenum (Mo) or molybdenum tungsten (MoW).

The oxide semiconductor layer may include IGZO (In-Ga-Zn-O).

Forming a second insulating film to expose the source or drain on the first insulating film, forming a first electrode to be connected to the source or drain on the second insulating film, and forming a bank layer having an opening on the first electrode, The method may include forming an organic emission layer on the first electrode and forming a second electrode on the organic emission layer.

The method may include preparing a second substrate facing the first substrate and adhering the first substrate and the second substrate to an adhesive member.

Forming an organic-inorganic multi-protective film to cover all the elements formed on the first substrate.

The method may include forming a second insulating layer to expose a source or a drain on the first insulating layer, and forming a pixel electrode to be connected to the source or drain on the second insulating layer.

Preparing a second substrate facing the first substrate, forming a liquid crystal alignment film on the first substrate and the second substrate, adhering the first substrate and the second substrate with an adhesive member, between the first substrate and the second substrate; Forming a liquid crystal layer may be included.

At least one of the first substrate, the second insulating layer, and the second substrate may include a common electrode connected to the common voltage wiring.

The present invention provides a method of manufacturing a display device which can improve the performance of devices by forming an ohmic contact layer which reduces the contact resistance and simultaneously forms a source and a drain by safely patterning a metal layer on an oxide semiconductor. It is effective.

Hereinafter, with reference to the accompanying drawings, the specific content for the practice of the present invention will be described.

1 to 7 are schematic process cross-sectional views for explaining a manufacturing method according to an embodiment of the present invention.

First, as shown in FIG. 1, a step of forming the gate 102 on the first substrate 110 is performed.

The first substrate 110 may be selected as a material for forming an element having excellent mechanical strength or dimensional stability. The material of the first substrate 110 may be a glass plate, a metal plate, a ceramic plate or a plastic plate (polycarbonate resin, acrylic resin, vinyl chloride resin, polyethylene terephthalate resin, polyimide resin, polyester resin, epoxy resin, silicone resin). , Fluorine resins, and the like).

Gate 102 is any one selected from the group consisting of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) It may be made of one or an alloy thereof.

In addition, the gate 102 is formed of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu). It may be a multilayer made of any one or alloys thereof. In addition, the gate 112 may be a bilayer of molybdenum / aluminum-neodymium or molybdenum / aluminum.

Next, as shown in FIG. 2, the first insulating film 103 is formed on the gate 102.

The first insulating layer 103 may be, but is not limited to, a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof. The first insulating film 103 is a gate insulating film.

Next, as shown in FIG. 3, the oxide semiconductor layer 104 is formed on the first insulating film 103.

The oxide semiconductor layer 104 may include IGZO (In-Ga-Zn-O). For example, the oxide semiconductor layer 104 may be a-IGZO, but is not limited thereto.

Next, as shown in FIG. 4, a step of forming the first metal layer 105 on the oxide semiconductor layer 104 is performed.

The first metal layer 105 may include molybdenum (Mo) alloy such as molybdenum titanium (MoTi), chromium (Cr), or indium tin oxide (ITO). The first metal layer 105 may be used as an ohmic contact layer that lowers the contact resistance with the metal to be formed thereon.

Next, as shown in FIG. 5, the forming of the second metal layer 106 on the first metal layer 105 is performed.

The second metal layer 106 may include molybdenum (Mo) or molybdenum tungsten (MoW). In addition, the second metal layer 106 may include aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), copper (Cu), or the like.

Next, as shown in FIG. 6, wet etching (W / E) of the second metal layer 106 is performed.

For example, when the second metal layer 106 is molybdenum (Mo) and the first metal layer 105 is molybdenum titanium (MoTi), the molybdenum titanium (MoTi) is wet-etched when the molybdenum (Mo) is etched. Low reactivity to chemical solvents for W / E) results in low incidence of damage during etching.

Here, even though the chemical solvent acts on the surface of the second metal layer 106 by wet etching (W / E) and is deeply cut by the isotropic etching characteristic, the first metal layer 105 disposed below is an oxide semiconductor layer. (104) can be protected.

In addition, the difficulty of controlling the concentration of the chemical solvent for wet etching (W / E) when patterning the second metal layer 106 is solved, and the oxide semiconductor layer 104 of the oxide semiconductor layer 104 is wetted by the chemical solvent for wet etching (W / E). The problem of surface damage can be prevented.

Next, as illustrated in FIG. 7, the first metal layer 105 is dry etched (D / E) to form a source 105a and a drain 105b.

The dry etching (D / E) method of etching the first metal layer 105 may use plasma etching, sputter etching, reactive ion etching, or the like. When the first metal layer 105 is etched using the above dry etching method, only a part of the desired layer may be patterned without being etched in the form of an undercut.

Therefore, since the first metal layer 105 is thinner than the second metal layer 106, when the first metal layer 105 is dry etched (D / E), the surface of the patterned second metal layer 106 Fine patterning is possible without damaging the surface of the oxide semiconductor layer 104.

On the other hand, when a-IGZO is formed of the oxide semiconductor layer 104, indium tin oxide (ITO) is used as the material of the first metal layer 105, and molybdenum (Mo) or molybdenum is used as the material of the second metal layer 106. The use of tungsten (MoW) may improve the contact resistance between them, thereby improving the performance of transistors in the device.

Thereafter, a second insulating film, which is a passivation film, is formed on the first insulating film 103 so that the source 106a or the drain 106b is exposed. The second insulating layer may be a silicon oxide layer (SiOx), a silicon nitride layer (SiNx), or a multilayer thereof, but is not limited thereto.

As described above, when the transistor is formed on the first substrate 110 by the same method as the exemplary embodiment of the present invention, the following display device can be formed.

8 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 8, a transistor formed by the method of FIGS. 1 to 7 is shown above. The transistor may include a gate 102 positioned on the first substrate 110. In addition, the first insulating layer 103 may be disposed on the gate 102. In addition, an oxide semiconductor layer 104 of a-IGZO disposed on the first insulating layer 103 may be included. In addition, the semiconductor device may include a first metal layer 105 positioned on the oxide semiconductor layer 104. In addition, the semiconductor device may include a source 106a and a drain 106b formed by the second metal layer 106 positioned on the first metal layer 105. In addition, the second insulating layer 107 may be disposed on the source 106a and the drain 106b.

Although not shown, scan wirings, data wirings, and power wirings may be positioned on the first substrate 110. In addition, at least one transistor and a capacitor may be positioned in an area where the scan line and the data line cross each other, which may be defined as one subpixel. Here, the transistor may include at least a switching transistor and a driving transistor.

After forming the transistor on the first substrate 110, an organic light emitting diode is formed as follows.

First, the first electrode 109 is formed on the second insulating layer 107 so as to be connected to the source 106a or the drain 106b.

The first electrode 109 may be selected as an anode or a cathode, and in the case of the anode, indium tin oxide (ITO) or indium zinc oxide (IZO) may be used as a transparent material, but is not limited thereto.

Next, a bank layer 120 having an opening is formed on the first electrode 109. The bank layer 120 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

Next, an organic emission layer 121 is formed on the first electrode 109. The organic emission layer 121 may be formed to emit one of red, green, and blue colors according to the subpixel P.

Next, the second electrode 122 is formed on the organic emission layer 121. The second electrode 122 may be selected as a cathode or an anode, and in the case of the cathode, aluminum (Al) may be used, but is not limited thereto.

Next, the second substrate 140 facing the first substrate 110 is prepared, and the first substrate 110 and the second substrate 140 are bonded to each other with the adhesive member 150. At least one of the first substrate 110 and the second substrate 140 may be selected as a transparent substrate according to a light emitting direction.

In the organic light emitting display device formed as described above, when the transistor is driven by the scan signal and the data signal supplied to the scan driver and the data driver, the organic light emitting diode emits light, thereby displaying an image.

9 is another cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

Referring to FIG. 9, a transistor formed by the method of FIGS. 1 to 7 is shown above. The transistor may include a gate 202 positioned on the first substrate 210. In addition, the first insulating layer 203 may be disposed on the gate 202. In addition, an oxide semiconductor layer 204 of a-IGZO positioned on the first insulating layer 203 may be included. In addition, the semiconductor device may include a first metal layer 205 positioned on the oxide semiconductor layer 204. In addition, a source 206a and a drain 206b formed by the second metal layer 206 positioned on the first metal layer 205 may be included. In addition, the second insulating layer 207 may be disposed on the source 206a and the drain 206b.

Although not shown, scan wirings, data wirings, and power wirings may be positioned on the first substrate 210. In addition, at least one transistor and a capacitor may be positioned in an area where the scan line and the data line cross each other, which may be defined as one subpixel. Here, the transistor may include at least a switching transistor and a driving transistor.

After forming the transistor on the first substrate 210, an organic light emitting diode is formed as follows.

First, the first electrode 209 is formed on the second insulating layer 207 so as to be connected to the source 206a or the drain 206b.

The first electrode 209 may be selected as an anode or a cathode. In the case of the anode, indium tin oxide (ITO) or indium zinc oxide (IZO) may be used as a transparent material, but is not limited thereto.

Next, a bank layer 220 having an opening is formed on the first electrode 209. The bank layer 220 may include an organic material such as benzocyclobutene (BCB) resin, acrylic resin, or polyimide resin.

Next, an organic emission layer 221 is formed on the first electrode 209. The organic light emitting layer 221 may be formed to emit light of any one of red, green, and blue according to the sub-pixel P.

Next, a second electrode 222 is formed on the organic emission layer 221. The second electrode 222 may be selected as a cathode or an anode, and in the case of the cathode, aluminum (Al) may be used, but is not limited thereto.

Next, an organic-inorganic multi protective film 260 is formed to cover all of the elements formed on the first substrate 210.

The multi passivation layer 260 may have a structure in which organic and inorganic materials are alternately stacked. As such, when the device is sealed using the multi passivation layer 260, a flexible organic light emitting display device may be formed.

In the organic light emitting display device formed as described above, when the transistor is driven by the scan signal and the data signal supplied to the scan driver and the data driver, the organic light emitting diode emits light, thereby displaying an image.

10 is a cross-sectional view of a liquid crystal display according to an exemplary embodiment of the present invention.

Referring to FIG. 10, a transistor formed by the method of FIGS. 1 to 7 is shown above. The transistor may include a gate 302 positioned on the first substrate 310. In addition, the first insulating layer 303 may be disposed on the gate 302. In addition, an oxide semiconductor layer 304 of a-IGZO disposed on the first insulating layer 303 may be included. In addition, the semiconductor device may include a first metal layer 305 positioned on the oxide semiconductor layer 304. In addition, a source 306a and a drain 306b formed by the second metal layer 306 positioned on the first metal layer 305 may be included. In addition, the second insulating layer 307 may be disposed on the source 306a and the drain 306b. In addition, the second insulating layer 307 may be disposed on the source 306a and the drain 306b.

Although not shown, scan lines, data lines, and common voltage lines may be positioned on the first substrate 310. In addition, one transistor and a capacitor may be positioned in an area where the scan line and the data line cross each other, which may be defined as one subpixel. A backlight unit including an optical sheet including a light source for emitting light, a diffusion plate, a prism sheet, and the like and a protective sheet may be disposed below the first substrate 310.

After the transistor is formed on the first substrate 310, a pixel electrode, a common electrode, a liquid crystal layer, and the like are formed as follows.

First, the pixel electrode 309 is formed on the second insulating layer 307 so as to be connected to the source 306a or the drain 306b. The material of the pixel electrode 309 may be indium tin oxide (ITO), indium zinc oxide (IZO), or the like, but is not limited thereto.

Next, a second substrate 340 facing the first substrate 310 is prepared.

The black matrix 351 is formed on the second substrate 340 facing the first substrate 310. The black matrix 351 may include a photosensitive organic material to which a black pigment is added, and as the black pigment, carbon black or titanium oxide may be used, but is not limited thereto.

In addition, a color filter 332 including red, green, and blue is formed between the black matrices 351. The color filter 332 may have other colors as well as red, green, and blue.

In addition, although the overcoat layer 333 may be formed to cover the black matrix 351 and the color filter 332, in some cases, the overcoat layer 333 may be omitted.

In addition, the common electrode 334 is formed on the overcoat layer 333 so as to be connected to the common voltage line.

Although not shown, a spacer for maintaining a cell gap may be positioned between the first substrate 310 and the second substrate 340. The spacer may be located above the transistor on the first substrate 310, but is not limited thereto.

Next, a liquid crystal alignment layer is formed on the first substrate 310 and the second substrate 340, and the first substrate 310 and the second substrate 340 are adhered to each other by the adhesive member 350, and the first substrate 310 is formed. ) And a liquid crystal layer 380 between the second substrate 340.

Here, the common electrode 334 is positioned on the overcoating layer 333 positioned on the second substrate 340, but the common electrode 334 is formed of the first substrate 310 and the second insulating layer 307. And at least one of the second substrate 340.

The liquid crystal display device formed as described above controls light emitted from the backlight unit with the liquid crystal layer 380 when the transistor is driven by the scan signal and the data signal supplied to the scan driver and the data driver, and is emitted through the color filter 332. The image can be expressed using light.

As described above, an embodiment of the present invention provides a display device capable of improving the performance of a device by forming an ohmic contact layer which reduces the contact resistance and simultaneously forms a source and a drain by safely patterning a metal layer on an oxide semiconductor. It is effective to provide a manufacturing method. In addition, according to an embodiment of the present invention, a stable process can be performed while reducing the load of the dry etching process, and the contact resistance characteristics can be improved, thereby improving the characteristics of the display panel.

Although the embodiments of the present invention have been described above with reference to the accompanying drawings, the technical configuration of the present invention described above may be modified in other specific forms by those skilled in the art to which the present invention pertains without changing its technical spirit or essential features. It will be appreciated that it may be practiced. Therefore, the embodiments described above are to be understood as illustrative and not restrictive in all aspects. In addition, the scope of the present invention is shown by the claims below, rather than the above detailed description. Also, it is to be construed that all changes or modifications derived from the meaning and scope of the claims and their equivalent concepts are included in the scope of the present invention.

1 to 7 is a schematic cross-sectional view illustrating a manufacturing method according to an embodiment of the present invention.

8 is a cross-sectional view of an organic light emitting display device according to an embodiment of the present invention.

9 is another cross-sectional view of an organic light emitting display device according to an embodiment of the present invention;

10 is a cross-sectional view of a liquid crystal display device according to an embodiment of the present invention.

<Explanation of symbols on main parts of the drawings>

110, 210, 310: first substrate 102, 202, 302: gate

103,203,303: First insulating film 104,204,304: Oxide semiconductor layer

105,205,305: first metal layer 106,206,306: second metal layer

107,207,307: Second insulating film 140,240,340: Second substrate

Claims (10)

Forming a gate on the first substrate; Forming a first insulating film on the gate; Forming an oxide semiconductor layer on the first insulating layer; Forming a first metal layer on the oxide semiconductor layer; Forming a second metal layer on the ohmic contact layer; Wet etching the second metal layer; And And dry-etching the first metal layer to form a source and a drain. The method of claim 1, The first metal layer is, A manufacturing method of a display device comprising molybdenum (Mo) alloy, chromium (Cr) or indium tin oxide (ITO). The method of claim 1, The second metal layer is, A method of manufacturing a display device including molybdenum (Mo) or molybdenum tungsten (MoW). The method of claim 1, The oxide semiconductor layer, A method of manufacturing a display device including IGZO (In-Ga-Zn-O). The method of claim 1, Forming a second insulating layer on the first insulating layer to expose the source or drain; Forming a first electrode on the second insulating layer so as to be connected to the source or the drain; Forming a bank layer having an opening on the first electrode, Forming an organic emission layer on the first electrode, And forming a second electrode on the organic light emitting layer. The method of claim 5, Preparing a second substrate facing the first substrate; And bonding the first substrate and the second substrate to an adhesive member. The method of claim 5, Forming an organic-inorganic multi-protective film to cover all of the elements formed on the first substrate. The method of claim 1, Forming a second insulating layer on the first insulating layer to expose the source or drain; And forming a pixel electrode on the second insulating layer so as to be connected to the source or the drain. The method of claim 8, Preparing a second substrate facing the first substrate; Forming a liquid crystal alignment layer on the first substrate and the second substrate, Adhering the first substrate and the second substrate to an adhesive member; Forming a liquid crystal layer between the first substrate and the second substrate. The method of claim 9, At least one of the first substrate, the second insulating film and the second substrate, A method of manufacturing a display device, comprising: positioning a common electrode connected to a common voltage wiring.

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