KR20090106427A - Group 3 nitride-based semiconductor light emitting diodes with the capability of electrostatic discharge protection and methods to fabricate them - Google Patents

Abstract

PURPOSE: A group III nitride based semiconductor light emitting diode is provided to form a light emitting diode and a schottky diode for preventing ESD(Electrostatic Discharge) on a single substrate at the same time without increase of a size. CONSTITUTION: A group III nitride based semiconductor light emitting diode includes a growth substrate(10), a light emitting structure, a heterogeneous material layer(120), an n-type contact electrode and electrode pad(70), and a p-type electrode pad(60). The light emitting structure comprises a bottom nitride based clad layer(20), a nitride based clad layer(30), and a top nitride based clad layer(40). The heterogeneous material layer forms an ohmic contact interface(B) and a schottky contact interface(A) in between the light emitting structure and a thin film structure for a schottky diode.

Description

Group 3 nitride-based semiconductor light emitting diodes having the antistatic ability and a method of manufacturing the same {group 3 nitride-based semiconductor light emitting diodes with the capability of electrostatic discharge protection and methods to fabricate them}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the manufacture of group III nitride semiconductor optoelectronic devices, and more particularly to light emitting structures and schottky diodes for group 3 nitride-based optoelectronics formed on the same substrate. ) A thin film structure for the device, and the optoelectronic device and the schottky diode device using two electrodes in common to prevent damage due to electrostatic discharge (ESD), the size of the final optoelectronic device and the number of electrodes Can be manufactured in the same manner as a conventional group III-nitride semiconductor optoelectronic device.

Among the optoelectronic devices, including light emitting diodes (LEDs), laser diode (LD) devices, and photo-detectors, LDs and LED devices constitute them when a forward current of a predetermined magnitude is applied. Current is converted into light in the active layer in the light emitting structure to generate light. Early research and development of LD and LED devices formed compound semiconductors such as indium phosphorus (InP), gallium arsenide (GaAs) and gallium phosphorus (GaP) in p-i-n junction structure. The LD and LED devices emit light in the visible light range of the wavelength band longer than the wavelength of green light, but recently developed a device for emitting blue and ultraviolet light due to research and development of group III nitride- They are also commercially available and are widely used in display devices, light source devices and environmental applications. In particular, a white light source LED device that emits white light by combining three LED device chips of red, green, and blue, or by incorporating a phosphor into a short wavelength pumping LED device is developed as an illumination device. The application range is also widening.

In addition, the LED device using a solid-state single crystal semiconductor as described above has the advantage of high efficiency of converting electrical energy to light energy, long lifespan of more than 5 years on average, and greatly reducing energy consumption and maintenance cost. It is attracting attention in the field.

Since the LED (manufactured by Group 3 nitride based semiconductor light emitting diode) device made of such a Group 3 nitride based semiconductor material is generally grown and manufactured on an insulating growth substrate (typically, sapphire), the other Group 3- Since two electrodes facing each other on the opposite side of the growth substrate, such as a Group 5 compound semiconductor light emitting diode device, cannot be provided, two electrodes of the LED device must be formed on the crystal-grown semiconductor material system. A conventional structure of such a group III-nitride semiconductor light emitting diode device is schematically illustrated in FIG.

Referring to FIG. 1, the group III-nitride semiconductor light emitting diode device includes a lower nitride based cladding layer made of a sapphire growth substrate 10 and an n-type conductive semiconductor material sequentially grown on the sapphire growth substrate 10. 20), an nitride-based active layer 30 and an upper nitride-based cladding layer 40 made of a p-type conductive semiconductor material. The lower nitride-based cladding layer 20 includes an n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) layer 201 and the n-type In x Al y Ga 1 n-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) layer 202 having a composition different from that of -xy N layer 201, and the nitride based active layer (30) shows an undoped nitride system In x Al y Ga 1-xy N (0≤x, 0≤y, x + y) composed of different compositions of multi-quantum well structure. ≤1) layer. In addition, the upper nitride-based cladding layer 40 includes a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) layer 401 and the p-type In x Al y. The p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) layer 402 having a different composition from the Ga 1-xy N layer 401 may be formed. In general, the lower nitride-based cladding layer / nitride-based active layer / upper nitride-based cladding layer 20, 30, or 40 formed of the group III-nitride semiconductor single crystal may be grown using an apparatus such as MOCVD or MBE. At this time, in order to improve lattice matching with the sapphire growth substrate 10 before growing the n-type In x Al y Ga 1-xy N layer 201 of the lower nitride-based cladding layer 20, AlN or GaN and The same buffer layer (not shown) may be formed therebetween.

As described above, since the sapphire growth substrate 10 is an electrically insulating material, both electrodes of the LED element should be formed on the same upper surface of the single crystal semiconductor growth direction. For this purpose, the upper nitride-based cladding layer 40 and the nitride Etching a portion of the active layer 30 to expose a portion of the upper surface of the lower nitride-based cladding layer 20, and expose the upper portion of the exposed n-type In x Al y Ga 1-xy N layer 20. The n-type ohmic contact electrode and the electrode pad 70 are formed on the surface.

In particular, since the upper nitride-based cladding layer 40 has a relatively high sheet resistance due to low carrier concentration and mobility, before forming the p-type electrode 60, There is a need for additional materials that can form ohmic contact current spreading layers. In contrast, in US Pat. No. 5,563,422, the schottky contact p-type electrode 60 is formed on the upper surface of the p-type In x Al y Ga 1-xy N layer 402, which is the uppermost layer of the light emitting structure for the group III nitride semiconductor light emitting diode device. Before forming the present invention, a method of forming the ohmic contact current spreading layer electrode 50 made of Ni / Au was proposed to form the ohmic contact current spreading layer electrode 50.

The ohmic contact current spreading layer electrode 50 improves current spreading in the horizontal direction with respect to the p-type In x Al y Ga 1-xy N layer 402 and at the same time has a low specific contact resistance in the vertical direction. By forming an ohmic contact interface having an effective current injection, an electrical characteristic of the light emitting diode device is improved. However, the ohmic contact current spreading layer electrode 50 made of Ni / Au shows a low transmittance of 70% on average even after the heat treatment. Such a low transmittance causes a large amount of light Absorption of the amount reduces the overall external luminous efficiency.

In order to overcome the low transmittance problem as described above, ITO has recently been known that the transmittance of the ohmic contact current spreading layer electrode 50 formed of various translucent metals or alloys including the Ni / Au layer has an average transmittance of 90% or more. A method of forming a transparent conductive material such as (indium tin oxide) or zinc oxide (ZnO) has been proposed. Since the transparent conductive material layer has a smaller work function (4.7 to 6.1 eV) than the p-type In x Al y Ga 1-xy N crystal (7.5 eV or more), the transparent conductive material layer is made of p-type In x Al y Ga In the case of depositing directly on the 1-xy N layer 402 and performing a subsequent process including heat treatment, a schottky interface having a large specific contact resistance rather than an ohmic contact interface is formed.

Therefore, in the field of LED device manufacturing technology, in order to form a high-quality electrode of a group III nitride semiconductor (In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1)) light emitting diode device There is a need for a group III-nitride semiconductor light emitting diode device capable of maintaining a high transmittance and forming a good ohmic contact interface between the p-type In x Al y Ga 1-xy layer 402 and the electrode and a manufacturing method thereof. It is true.

First of all, in order to be used as a white light source for a wide range of industrial applications and lighting, the current flows in a reverse direction to the group III nitride semiconductor light emitting diode device grown and manufactured on the sapphire growth substrate having electrical and thermally poor conductivity. In the event of a leak, a leaky current can occur, which can completely damage the LED device. Therefore, it is necessary to reduce electrostatic discharge (ESD) and reduce the leakage current to improve the reliability of the LED device, and to minimize the heat generated when driving the LED device, Skill is also required.

In particular, the group III-nitride semiconductor light emitting diode device has a disadvantage that it is critically vulnerable to the electrostatic discharge shock compared to other light emitting devices using a group 3-5 compound semiconductor. For example, the group III-nitride semiconductor light emitting diode device may be destroyed at an average voltage of several hundred volts or more in the forward direction, and may be destroyed at an average voltage of several tens of volts or more in the reverse direction. Such electrostatic shock is a major cause of completely damaging the LED device when handling the group III-nitride semiconductor light emitting diode device. Therefore, various research results have been reported and applied to overcome the disadvantages of the group III-nitride semiconductor light emitting diode device, which are vulnerable to the electrostatic discharge, and the related art has been disclosed in many patents and documents, including US patent (US 6,593,597). A group III nitride semiconductor light emitting diode device in which a group III nitride semiconductor light emitting diode device and a schottky diode device are simultaneously implemented on a single substrate is illustrated.

FIG. 2 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device shown in the above-described US patent (US 6,593,597).

Referring to FIG. 2, a conventional ESD protection LED device forms an LED device portion (area A) and a schottky diode element portion (area B) on the same substrate. The LED device portion (region A) is a well-known light emitting structure for group III-nitride semiconductor light emitting diode devices, which includes a buffer layer 110a and a lower nitride cladding layer formed of an n-type conductive semiconductor material on the growth substrate 10. 20a), the nitride-based active layer 30, and the upper nitride-based cladding layer 40 formed of a p-type conductive semiconductor material are sequentially formed, and a high quality ohmic contact current soup is formed on the upper nitride-based cladding layer 40. A structure in which the n-type ohmic contact electrode and the electrode pad 70 are formed on the lower nitride-based cladding layer 20a exposed by the etching process, forming the reading layer 50 and the p-type electrode pad 60. Has At the same time, the schottky diode element region (B region) forms two electrodes 60b, 70b on the lower nitride-based cladding layer 20b, which is an n-type conductive semiconductor layer, and one electrode 70b has a lower nitride-based cladding. A schottky contact interface is formed with the layer 20b to implement the schottky diode element (region B). As described above, the existing ESD protection LED device is simply caused by the size problem of the LED device because the solid-state semiconductor LED device (A region) and the schottky diode element (B region) are respectively implemented on the same growth substrate 10. There are disadvantages of high cost due to complicated process resulting from low LED device yield and electrical connection problems per wafer.

In general, ESD prevention and heat emission problems, which are serious in the group III-V compound semiconductor light emitting diode devices grown and manufactured on the sapphire growth substrate, are closely related to the electrical and optical characteristics of LED devices . In order to solve the problems raised in the group III-nitride-based semiconductor light emitting diode device, in addition to the growth of high-quality semiconductor single crystal light emitting structure, the p-type In x Al y Ga 1, the upper nitride-based cladding layer during the LED device manufacturing process This is a general case in which high-quality ohmic contact current spreading layer electrode 50 is formed on the xy N layer 402 and various ESD protection accessory devices are applied.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and includes a schottky diode on top of a heterogeneous material layer for reflective or transparent bonding, which is in contact with an ohmic contact interface to an upper layer of a light emitting structure for a group III nitride semiconductor light emitting diode device. (schottky diode) comprising a thin film structure for the device, the group III nitride-based semiconductor light emitting diode light emitting structure and the thin film structure for the schottky diode device by electrically connecting the ESD impact of the LED device manufactured by the present invention The purpose of this study is to improve the overall performance of group III-nitride semiconductor light emitting diode devices by reducing heat generation due to the current spreading and the low operating voltage in the horizontal direction with strong resistance to There is this.

More specifically, the present invention provides a group III nitride semiconductor having a p-type In x Al y Ga 1-xy N (0 ≦ x, 0 ≦ y, x + y ≦ 1) material system on the same substrate. After sequentially forming a light emitting structure for a light emitting diode device and a heterogeneous material layer for reflective or transparent bonding contacted with an ohmic contact interface on the p-type In x Al y Ga 1-xy N semiconductor layer, The purpose of the present invention is to provide a high-performance LED device having high light extraction efficiency including strong resistance to ESD impact by providing a thin film structure for a schottky diode device on an upper layer of a heterogeneous material layer for reflecting or transparency bonding. .

In order to successfully carry out the above object of the present invention, the formation of the thin film structure for the schottky diode device electrically connected to the upper layer of the light emitting structure for the light emitting diode device is indirect wafer bonding (introducing a heterogeneous material layer for reflective or transparent bonding) indirect wafer bonding) process. A reflective or transparent bonding heterogeneous material layer forming an ohmic contact interface with an upper nitride-based cladding layer of the light emitting diode for light emitting device is present between the light emitting diode for light emitting diode device and the thin film structure for a schottky diode device. In addition to the strong mechanical bonding, the semiconductor layer of the thin film structure for the schottky diode device may have a different electrical contact interface state, that is, ohmic contact or schottky, depending on the shape of the finally produced light emitting diode device. It has a schottky contact interface.

On the other hand, in order to successfully carry out the above object of the present invention, the formation of the thin film structure for the schottky diode device electrically connected to the upper layer of the light emitting structure for the light emitting diode device is the upper nitride-based cladding of the light emitting structure for the light emitting diode device It is preferable to carry out by a growth or deposition process on the reflective or transparent bonding dissimilar material layer forming an ohmic contact interface with the layer. A reflective or transparent bonding heterogeneous material layer forming an ohmic contact interface with an upper nitride-based cladding layer of the light emitting diode for light emitting device is present between the light emitting diode for light emitting diode device and the thin film structure for a schottky diode device. In addition to the strong mechanical bonding, the semiconductor layer of the thin film structure for the schottky diode device may have a different electrical contact interface state, that is, ohmic contact or schottky, depending on the shape of the finally produced light emitting diode device. It has a schottky contact interface.

The present invention provides a high performance group III-nitride-based light emitting diode having a thin film structure for a schottky diode device on a light emitting structure for a light emitting diode device on a growing substrate. In the device manufacturing method,

Forming a thin film structure for a schottky diode device on a supporting substrate;

Forming a light emitting structure for the group III nitride semiconductor light emitting diode device on the growth substrate;

Combining the prepared two structures to form a complex structure by introducing a conductive material, a heterogeneous material layer for coupling reflective or transparent, from wafer to wafer;

Separating the support substrate of the thin film structure for the schottky diode device from the combined composite structure;

After removing a part of the light emitting structure for the light emitting diode device from the composite structure in which the support substrate is separated, the lower nitride cladding layer, which is an n-type conductive semiconductor material exposed to the atmosphere, and the semiconductor layer of the thin film structure for the schottky diode device are exposed. Forming an n-type contact electrode and an electrode pad in the form of a metal wire for electrical connection;

And forming a p-type electrode pad in the form of a metal wire film formed on the reflective or transparent bonding heterogeneous material layer in which a portion of the thin film structure for the schottky diode device is removed.

Further, the material constituting the thin film structure for the schottky diode device formed on the heterogeneous material layer for the reflective or transparent bonding is not limited to use if it is a generally known n-type semiconductor or p-type semiconductor, and together with crystalline (amorphous, Polycrystalline, monocrystalline) state can be used. In particular, silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), silicon carbide (SiC), silicon carbon nitride (SiCN), group 2-6 group compound (group 2- It is desirable to have a single layer or multi-layer single conductivity consisting of 6 compounds, and group 3-5 compounds. The single conductivity means that the multiple carriers in the thin film structure for the schottky diode device have electrical conductivity only with electrons or only with holes. However, p-n junction is excluded.

Furthermore, the group III-nitride semiconductor light emitting diode device is composed of a group III nitride-based semiconductor material system represented by the formula In x Al y Ga 1-xy N (0≤x, 0≤y, x + y≤1). A growth substrate for growing a group III nitride semiconductor material; A lower nitride cladding layer formed on the growth substrate and formed of an n-type conductive nitride-based semiconductor material; A nitride based active layer formed on a portion of the lower nitride based cladding layer and formed of an undoped nitride based semiconductor material; And an upper nitride cladding layer formed on the nitride-based active layer and made of a p-type conductive nitride-based semiconductor material. In particular, the group III-nitride semiconductor light emitting diode device formed on the growth substrate preferably has a positive polarity surface, which is a metallic surface, and a separate layer necessary for improving the overall performance of the LED device is inserted. May be

Furthermore, the electrically conductive dissimilar material layer for the reflective or transparent coupling may have an electrical contact interface with the semiconductor layer of the upper nitride-based cladding layer of the light emitting structure for the LED device and the thin film structure for the schottky diode device, respectively. Preference is given to monolayers or multilayers forming electrical contact interfaces. The electrical contact interface has two meanings depending on the noncontact resistance characteristic which is an interface characteristic between the hetero-material layer for reflective or transparent bonding and the upper nitride-based clad layer or the semiconductor layer, that is, the ohmic contact interface having low non- On the contrary, there is a schottky contact interface having high specific contact resistance.

Further, the support substrate lift-off process may include chemical lift-off (CLO), chemical-mechanical etching or polishing (CMP), and laser lift-off. LLO) at least one of the processes is preferred.

Furthermore, the n-type contact electrode and electrode pad formation of the metal wire film having an electrical contact interface between the semiconductor layer of the thin film structure for the schottky diode device and the lower nitride-based cladding layer of the light emitting structure for the LED device may be formed by using an electrically insulating material. It is preferable to electrically short the other light emitting structure of the n-type contact, and the n-type contact in contact with the lower nitride-based cladding layer preferably has an ohmic contact interface in the vertical direction.

Furthermore, the thin film structure for a schottky diode formed above the hetero-material layer for reflective or transparent bonding may be formed using physical-chemical process equipment including CVD, MBE, sputtering, pulsed laser deposition, evaporation, or ion- It is desirable to grow or deposit by

Furthermore, a transparent electrically insulating or electrically conductive heterogeneous material, a fluorescent material, an anti-reflective material, or a light filtering material may be formed on the semiconductor layer of the thin film structure for the schottky diode device. A functional thin film layer may be formed, and a surface irregularity process may be introduced before and after forming the functional thin film layer.

Furthermore, when fabricating a group III nitride semiconductor light emitting diode device using a dissimilar material layer for transparent bonding in electrical contact between the light emitting structure for the light emitting diode device and the thin film structure for the schottky diode device, the rear surface of the growth substrate ( It is desirable to form a reflective material on the back-side.

As described above, according to the present invention, an ESD impact is realized by simultaneously implementing a group III nitride semiconductor light emitting diode device and an ESD protection schottky diode device on a single substrate without increasing the size of the group III nitride semiconductor light emitting diode device. There is an effect that can prevent the fatal damage of the LED device.

In addition, according to the present invention, since the group III nitride semiconductor light emitting diode device and the ESD protection schottky diode device implemented on a single substrate are operated with only two electrodes as a whole by using a common electrode, external circuits are formed due to additional electrode formation. There is an effect that can solve the technical and economic problems that occur when electrically connected to the back.

Hereinafter, with reference to the accompanying drawings, it will be described in more detail with respect to the Group III nitride semiconductor light emitting diode device manufactured according to the present invention.

3 is a cross-sectional view of a thin film structure for a schottky diode device formed on a supporting substrate according to the present invention.

Referring to FIG. 3, the support substrate 80 for forming the thin film structure for a Schottky diode device may be any substrate material capable of forming a solid semiconductor, and may be an electrically insulating material Phosphorus sapphire, glass, aluminum nitride, silicon carbide (SiC), zinc oxide (ZnO), including gallium arsenide (GaAs), silicon (Si), low manganese (Ge), Silicon low manganese (SiGe) is preferred.

The thin film structure 100 for a schottky diode element formed on the selected support substrate 80 is not limited to the use of a known n-type semiconductor or a p-type semiconductor material, and may be a crystalline (amorphous, polycrystalline, Can be used regardless. In particular, silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), silicon carbide (SiC), silicon carbon nitride (SiCN), group 2-6 group compound (group 2- It is desirable to have a single electrical conductivity, which is a single layer or multilayer structure composed of 6 compounds, and group 3-5 compounds.

The single electroconductivity means that the multiple carriers in the thin film structure for the schottky diode device have electrical conductivity only with electrons or only with holes. However, p-n junction is excluded.

Furthermore, prior to forming the thin film structure 100 for the schottky diode element formed on the selected support substrate 80, a buffering layer (buffering layer), which mitigates the stress caused by the difference in lattice constant and thermal expansion coefficient, is not shown. It is preferred that a new layer, including) be introduced.

4 is a cross-sectional view of a composite structure in which a light emitting structure for a group III nitride semiconductor light emitting diode device and a thin film structure for a schottky diode device according to the present invention are bonded by a wafer bonding process using a heterogeneous material layer for reflective bonding; to be.

Referring to FIG. 4A, which is a well-known light emitting structure for a group III nitride semiconductor light emitting diode device, a sapphire growth substrate 10 for growing a group III nitride semiconductor material system and the sapphire growth substrate 10 are described. A lower nitride cladding layer 20 made of an n-type conductive single crystal semiconductor material sequentially formed thereon, a nitride active layer 30, and an upper nitride cladding layer 40 made of a p-type conductive single crystal semiconductor material. Include. The lower nitride-based cladding layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer, and the nitride-based active layer 30 may be an undoped InGaN of a multi-quantum well structure. It may consist of layers. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. As described above, the semiconductor single crystal semiconductor layers 20, 30, and 40 may be grown using a process such as MOCVD or MBE single crystal growth. In this case, in order to improve the lattice matching between the lower nitride-based cladding layer 20 and the sapphire growth substrate 10, it is preferable to further form a buffer layer 110 such as AlN or GaN on the sapphire growth substrate 10. desirable.

The upper nitride-based cladding layer 40 may separately include an interface modification layer. The surface modification layer is a superlattice structure, a surface formed of n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or nitrogen polarity (nitrogen- group III nitride system having a polar surface. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing group 2, 3, or 4 element elements.

4A is a cross-sectional view of the thin film structure for the schottky diode device formed on the support substrate 80, and has the same material structure and structure as described with reference to FIG.

4C is an electrically conductive reflectivity introduced between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. The heterogeneous material layer 120 for bonding. The heterogeneous material layer 120 for the reflective coupling strengthens the mechanical bonding force between the two material layers 40 and 100, and at the same time, the region B contacting the upper nitride-based cladding layer 40 has an ohmic contact with low specific resistance. Whereas the interface is formed, the region A in contact with the semiconductor layer 100 of the thin film structure for the schottky diode element is formed of a single layer or a multi-layer which forms a schottky contact interface having a high specific contact resistance. desirable. The reflective metallic material layer 120 may be made of a reflective metallic material such as Al, Ag, Rh, Pd, Pt, Au, Ni, Cr, Also preferred are related alloys, or structures such as distributed Bragg reflector (DBR) and omni-directional reflectror (ODR) layers.

FIG. 4D shows a mechanical bonding force between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. A cross-sectional view showing a composite structure in which wafer bonding is performed by introducing a heterogeneous material layer 120 for reflective bonding, which may be strengthened, and a temperature and a hydrostatic pressure of 900 ° C. or less. Furthermore, in order to form the ohmic contact interface (B) and the schottky contact interface (A) as described above, the upper nitride-based cladding layer 40 or the thin film structure for the schottky diode device before the wafer bonding process. The semiconductor layer 100 may be annealed at an appropriate temperature and gas atmosphere and subjected to surface treatment, including solution or plasma, and at the same time post-process. ) May also be subjected to the annealing or surface treatment process described above.

For example, as illustrated in FIG. 4D, the heterogeneous material layer for reflective coupling may be formed of two layers 120a and 120b. The 120a layer may be an Ag metal or an alloy, while the 120b layer may be formed of an Al metal or an alloy.

5 is a wafer bonding process using a heterogeneous layer for reflective bonding between a light emitting structure for a group III nitride semiconductor light emitting diode (LED) device and a light emitting structure for a schottky diode device according to the present invention; A cross-sectional view of another composite structure bonded together.

5A, which is a light emitting structure for a group III nitride-based semiconductor light-emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a Group III nitride-based semiconductor material system, The nitride-based active layer 30, and the upper nitride-based cladding layer 40 made of a p-type conductive single crystal semiconductor material are sequentially stacked on the lower cladding layer 20, the lower cladding layer 20, Include. The lower nitride-based cladding layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer, and the nitride-based active layer 30 may be an undoped InGaN of a multi-quantum well structure. It may consist of layers. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. As described above, the semiconductor single crystal semiconductor layers 20, 30, and 40 may be grown using a process such as MOCVD or MBE single crystal growth. In this case, in order to improve lattice matching between the lower nitride-based cladding layer 20 and the sapphire growth substrate 10, a buffer layer 110 such as AlN or GaN is further formed on the sapphire growth substrate 10. It is preferable.

The upper nitride-based cladding layer 40 may separately include an interface modification layer. The surface modification layer is a superlattice structure, a surface formed of n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or nitrogen polarity (nitrogen- group III nitride system having a polar surface. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing group 2, 3, or 4 element elements.

FIG. 5B is a cross-sectional view of the thin film structure for the schottky diode element formed on the support substrate 80, and has the same material structure and structure as described in FIG.

Fig. 5C is an electrically conductive reflectivity introduced between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. The heterogeneous material layer 120 for bonding. The heterogeneous material layer 120 for the reflective coupling strengthens the mechanical bonding force between the two material layers 40 and 100, and the upper nitride-based cladding layer 40 and the semiconductor layer 100 of the thin film structure for the schottky diode device. Preferably, the regions C and D in contact with each other form a single layer or a multi-layer, which forms an ohmic contact interface having a low specific contact resistance. The reflective metallic material layer 120 may be made of a reflective metallic material such as Al, Ag, Rh, Pd, Pt, Au, Ni, Cr, Also preferred are related alloys, or structures such as distributed Bragg reflector (DBR) and omni-directional reflectror (ODR) layers.

FIG. 5D shows a mechanical bonding force between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. Sectional view showing a composite structure obtained by introducing a layer 120 of a heterogeneous material for reflective bonding capable of being strengthened and wafer bonded by a temperature of 900 ° C or less and hydrostatic pressure. Furthermore, as described above, the upper nitride-based cladding layer 40 or the semiconductor layer of the thin film structure for the schottky diode device before the wafer bonding process in order to form the ohmic contact interfaces C and D in both regions as described above. The 100 can be annealed at a suitable temperature and gas atmosphere and subjected to surface treatment, including solution or plasma, and at the same time post-process. The above annealing or surface treatment process may be introduced.

For example, as shown in FIG. 5D, the heterogeneous material layer for reflective coupling is formed of two layers 120a and 120b, where the 120a layer is an Ag metal or an alloy, while the 120b layer may be formed of an Al metal or an alloy.

6 is a cross-sectional view of a composite structure in which a light-emitting structure for a group III nitride-based semiconductor light-emitting diode device and a thin-film structure for a schottky diode device according to the present invention are bonded by a wafer bonding process using a layer of a hetero- to be.

6A, which is a light emitting structure for a group III nitride-based semiconductor light emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a group III nitride-based semiconductor material system, The lower nitride cladding layer 20 made of an n-type conductive single crystal semiconductor material sequentially formed thereon, the nitride-based active layer 30, and the upper nitride cladding layer 40 made of a p-type conductive single crystal semiconductor material Include. The lower nitride-based cladding layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer, and the nitride-based active layer 30 may be an undoped InGaN of a multi-quantum well structure. It may consist of layers. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. As described above, the semiconductor single crystal semiconductor layers 20, 30, and 40 may be grown using a process such as MOCVD or MBE single crystal growth. At this time, in order to improve the lattice matching between the lower nitride-based clad layer 20 and the sapphire growth substrate 10, a buffer layer 110 such as AlN or GaN is further formed on the sapphire growth substrate 10 It is preferable.

The upper nitride-based cladding layer 40 may separately include an interface modification layer. The surface modification layer is a superlattice structure, a surface formed of n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or nitrogen polarity (nitrogen- group III nitride system having a polar surface. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing group 2, 3, or 4 element elements.

FIG. 6B is a cross-sectional view of the thin film structure for the schottky diode device formed on the support substrate 80, and has the same material structure and structure as described in FIG.

FIG. 6C is an electrical conductive transparency introduced between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. The heterogeneous material layer 130 for bonding. The dissimilar material layer 130 for the transparent bonding strengthens the mechanical bonding force between the two material layers 40 and 100, and at the same time, the region F contacting the upper nitride-based cladding layer 40 has an ohmic contact with low specific contact resistance. While the interface is formed, the region E in contact with the semiconductor layer 100 of the thin film structure for the schottky diode element is preferably a single layer or a multi-layer which forms a schottky contact interface having a high specific contact resistance. Do. The transparent bonding heterogeneous material layer 130 may be used without limitation as long as it is an optically transparent and electrically conductive material, in particular, well-known transparent thin films NiO, Au, IrO2, Ir, RuO2, Ru, Pt, PtO, Pd Preferred are materials such as PdO, ITO, ZnO, IZO, ZITO, SnO2, In2O3, TiN.

6D shows a mechanical bonding force between the upper nitride-based cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. A cross-sectional view of a light emitting structure in which wafer bonding is performed by introducing a heterogeneous material layer 130 for transparent bonding, which may be strengthened, and a temperature and a hydrostatic pressure of 900 ° C. or less. Furthermore, in order to form the ohmic contact interface F and the schottky contact interface E as described above, the upper nitride-based clad layer 40 or the thin-film structure for a schottky diode structure before the wafer bonding process The semiconductor layer 100 can be annealed at an appropriate temperature and gas atmosphere and subjected to surface treatment, including solution or plasma, and at the same time post-bonding wafers. The above annealing or surface treatment process may also be introduced.

For example, as shown in FIG. 6D, two layers of the transparent bonding dichroic material 130a and 130b are formed of NiO in which the Au component exists in the form of a jet, while 130b is formed of ITO Can be.

7 is a wafer bonding process using a group III nitride-based semiconductor light emitting diode (LED) light emitting structure and a light emitting structure for a schottky diode device using a heterogeneous material layer for transparent bonding according to the present invention. A cross-sectional view of another composite structure bonded together.

7A, which is a light emitting structure for a group III nitride-based semiconductor light emitting diode device generally known in the art, includes a sapphire growth substrate 10 for growing a group III nitride-based semiconductor material system, A lower nitride cladding layer 20 made of an n-type conductive single crystal semiconductor material sequentially formed thereon, a nitride active layer 30, and an upper nitride cladding layer 40 made of a p-type conductive single crystal semiconductor material. Include. The lower nitride-based cladding layer 20 may be formed of an n-type GaN layer and an n-type AlGaN layer, and the nitride-based active layer 30 may be an undoped InGaN of a multi-quantum well structure. It may consist of layers. In addition, the upper nitride-based cladding layer 40 may be composed of a p-type GaN layer and a p-type AlGaN layer. As described above, the semiconductor single crystal semiconductor layers 20, 30, and 40 may be grown using a process such as MOCVD or MBE single crystal growth. In this case, in order to improve lattice matching between the lower nitride-based cladding layer 20 and the sapphire growth substrate 10, a buffer layer 110 such as AlN or GaN is further formed on the sapphire growth substrate 10. It is preferable.

The upper nitride-based cladding layer 40 may separately include an interface modification layer. The surface modification layer is a superlattice structure, a surface formed of n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, or nitrogen polarity (nitrogen- group III nitride system having a polar surface. In particular, the surface modification layer of the superlattice structure is composed of nitride or carbon nitride containing group 2, 3, or 4 element elements.

FIG. 7B is a cross-sectional view of the thin film structure for the schottky diode element formed on the support substrate 80, and has the same material structure and structure as described in FIG.

FIG. 7C is an electrical conductive transparency introduced between the upper nitride-based cladding layer 40, which is the uppermost layer of the light emitting structure for group III-nitride semiconductor light emitting diode devices, and the semiconductor layer 100 of the thin film structure for the schottky diode device. The heterogeneous material layer 130 for bonding. The transparent bonding different material layer 130 enhances a mechanical bonding force between the two material layers 40 and 100 and is formed on the upper nitride-based clad layer 40 and the semiconductor layer 100 of the thin- Preferably, the regions G and H in contact with each other form a single layer or a multi-layer, which forms an ohmic contact interface having a low specific contact resistance. Therefore, the transparent bonding heterogeneous material layer 130 may be used without limitation as long as it is a transparent electrically conductive material, in particular, well-known transparent thin films NiO, Au, IrO2, Ir, RuO2, Ru, Pt, PtO, Pd, PdO Preferred are materials such as, ITO, ZnO, IZO, ZITO, SnO 2, In 2 O 3, TiN.

FIG. 7D shows a mechanical bonding force between the upper nitride cladding layer 40, which is the uppermost layer of the light emitting structure for the group III-nitride semiconductor light emitting diode device, and the semiconductor layer 100 of the thin film structure for the schottky diode device. A cross-sectional view of a composite structure obtained by introducing a layer 120 of a transparent bonding material capable of being strengthened and performing wafer bonding at a temperature of 900 ° C or less and hydrostatic pressure. Further, as described above, the upper nitride-based cladding layer 40 or the semiconductor layer of the thin film structure for the schottky diode device before the wafer bonding process in order to form the ohmic contact interfaces G and H in both regions as described above. The substrate 100 can be subjected to annealing in an appropriate temperature and gas atmosphere and surface treatment including a solution or a plasma and at the same time, The above annealing or surface treatment process may be introduced.

For example, as shown in FIG. 7D, the transparent bonding different material layer 130 is formed of two layers 130a and 130b. The layer 130a is NiO in which the Au component exists in the form of a spray, whereas 130b is ZnO It can be formed as.

FIG. 8 is a cross-sectional view of the wafer bonded composite structure according to the present invention after the support substrate of the thin film structure for the schottky diode is lifted off.

FIG. 8A illustrates that the light emitting structure for the group III nitride semiconductor light emitting diode device and the thin film structure for the schottky diode device are electrically connected to the ohmic contact interface B by the heterogeneous material layer 120 for reflective coupling on the growth substrate 10. And a composite structure each having a schottky contact interface A, whereas FIG. 8B shows a composite structure having both ohmic contact interfaces D and C electrically by the heterogeneous material layer 120 for reflective bonding. It is an example.

On the other hand, FIG. 8C shows that the light emitting structure for the group III nitride semiconductor light emitting diode device and the thin film structure for the schottky diode device are electrically mixed on the growth substrate 10 by the heterogeneous material layer 130 for transparent bonding. One example shows a composite structure having a contact interface (F) and a schottky contact interface (E), whereas FIG. 8D shows both ohmic contact interfaces (H, G) electrically by the dissimilar material layer 130 for transparent bonding. It is an example of a composite structure having.

The lift-off process of the support substrate 80 in the wafer-bonded composite structure is dependent on the characteristics of the support substrate 80 and may be performed by chemical wet etching (CLO), chemical-mechanical etching or polishing (CMP) It is desirable to use one or more of the lift off (LLO) processes.

FIG. 9 is a plan view of a wafer bonded composite structure according to the present invention after lifting off a supporting substrate of a thin film structure for a schottky diode device.

Referring to FIG. 9A, the upper nitride-based cladding layer of the light emitting structure for the group III nitride semiconductor light emitting diode device and the semiconductor layer 100 of the thin film structure for the schottky diode device are heterogeneous layers 120 for reflective or transparent coupling. Join the front of the wafer.

Referring to FIG. 9B, after the semiconductor layer 100 of the thin film structure for the schottky diode device is etched into a predetermined dimension and shape, the heterogeneous material layers 120 and 130 for coupling the reflective or transparent materials are formed. To the top.

Further, for easy subsequent processing, the light-emitting structure for the group III nitride-based semiconductor light-emitting diode element and the thin-film structure for the shock diode element are simultaneously etched by using a general photolithography process prior to wafer bonding, Aligned wafer bonding is also possible after the operation. In particular, as shown in FIG. 9C, the etched shape of the group III nitride semiconductor light emitting diode device light emitting structure 40 is compared with the etched shape of the thin film structure 100 for the schottky diode device. It is desirable to make it larger.

FIG. 10 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device shown as a first embodiment manufactured by the present invention.

Referring to FIG. 10, first, a growth substrate 10 for growing a light emitting structure for a group III nitride semiconductor light emitting diode device is prepared, and an n-type conductive nitride-based semiconductor material is formed on the growth substrate 10. The lower nitride cladding layer 20, the nitride active layer 30, and the upper nitride cladding layer 40 composed of a p-type conductive nitride-based semiconductor material are sequentially formed. As the growth substrate 10, a sapphire substrate may be used. The lower nitride-based cladding layer 20 and the upper nitride-based cladding layer 40 may be formed of a GaN layer and an AlGaN layer as described above, respectively. It may be formed by, and may be formed by a MOCVD process. Subsequently, the light emitting structure for the light emitting diode device grown on the growth substrate 10 and the upper nitride cladding of the light emitting structure by the wafer bonding using the heterogeneous material layer 120 for reflective bonding and the separation of the support substrate 80. For the pair of reflective material in contact with the layer 40 and the ohmic contact interface (B) 120, and for the schottky diode device bonded to the schottky contact interface (A) on top of the reflective material for the different material layer (120) The semiconductor layer 100 is sequentially formed. The semiconductor layer 100 of the thin film structure for a schottky diode, the heterojunction material layer 120 for the reflective coupling, the upper nitride layer 120, and the upper nitride layer 120 are exposed so that a lower region of the lower nitride-based clad layer 20 of the light- A portion of the cladding layer 40 and the nitride based active layer 30 is removed. The lower nitride-based clad layer 20 exposed to the atmosphere and the semiconductor layer 100 of the thin film structure for a Schottky diode device are electrically connected using a metal line film and the side surface of the light emitting structure The n-type contact electrode and the electrode pad 70 are insulated from each other. An interface 160 between the n-type contact electrode and electrode pad 70, which is the metal wire film, and the lower nitride-based cladding layer 20, and the n-type contact electrode and electrode pad 70, which is a metal wire film, and the thin film structure for the schottky diode device. The interface 151 between the semiconductor layers 100 is preferably formed in ohmic contact. A part of the heterojunction material layer 120 for reflection bonding, which is directly connected to the upper nitride-based cladding layer 40 at the ohmic contact interface B, is exposed to the atmosphere, and the semiconductor of the thin- The p-type electrode pad 60 is formed using the layer 100 and the metal wire film. When the p-type electrode pad 60 is formed, the p-type electrode pad 60 is electrically insulated from the side surface of the light emitting structure by using the electrical insulating layer 140.

Further, the shape of the structure according to another light emitting structure removal process to expose a portion of the lower nitride-based cladding layer 20 of the light emitting structure for the light emitting diode device is to form the n-type contact electrode and electrode pad 70 It may be changed in various forms according to the position, electrode shape and size.

Furthermore, although not shown in FIG. 10, a heterogeneous material, a fluorescent material, and a non-reflective material which is transparent or electrically conductive on the semiconductor layer 100 of the thin film structure for the schottky diode device to improve external light emission efficiency. a functional thin film layer such as an anti-reflective material or a light filtering material is formed on the substrate, and a surface irregularity process is preferably introduced before and after forming the functional thin film layer.

Fig. 11 is a sectional view of a group III-nitride semiconductor light emitting diode device shown as a second embodiment produced by the present invention.

Referring to FIG. 11, first, a growth substrate 10 for growing a light emitting structure for a group III nitride semiconductor light emitting diode device is prepared, and an n-type conductive nitride-based semiconductor material is formed on the growth substrate 10. The lower nitride cladding layer 20, the nitride active layer 30, and the upper nitride cladding layer 40 composed of a p-type conductive nitride-based semiconductor material are sequentially formed. As the growth substrate 10, a sapphire substrate may be used, and the lower nitride-based cladding layer 20 and the upper nitride-based cladding layer 40 may form GaN layers and AlGaN layers, respectively, as described above. It may be made by the MOCVD process. Subsequently, the light emitting structure for the light emitting diode device grown on the growth substrate 10 and the upper nitride cladding of the light emitting structure by the wafer bonding using the heterogeneous material layer 120 for reflective bonding and the separation of the support substrate 80. The heterogeneous material layer 120 for the reflective coupling in contact with the layer 40 and the ohmic contact interface (D), and for the schottky diode device bonded to the ohmic contact interface (C) on the reflective material heteromaterial layer 120. The semiconductor layer 100 is sequentially formed. Subsequently, the semiconductor layer 100 of the thin film structure for the schottky diode element, the heterogeneous material layer 120 for the reflective coupling, and the upper nitride layer so that a portion of the lower nitride cladding layer 20 of the light emitting structure for the light emitting diode element is exposed. A portion of the cladding layer 40 and the nitride based active layer 30 is removed. The lower nitride cladding layer 20 exposed to the atmosphere and the semiconductor layer 100 of the thin film structure for the schottky diode device are electrically connected to each other using a metal wire film, and the side surface of the light emitting structure is formed using the electrical insulating layer 140. The n-type contact electrode and the electrode pad 70 are insulated from each other. The interface 160 between the n-type contact electrode and electrode pad 70, which is the metal wire film, and the lower nitride-based cladding layer 20 is in ohmic contact, whereas the n-type contact electrode and electrode pad 70, which is a metal wire film, The interface 152 between the semiconductor layers 100 of the thin film structure for the schottky diode device should be formed by schottky contact. In addition, the semiconductor of the thin film structure for the schottky diode device is exposed by exposing a portion of the reflective material heterogeneous layer 120 directly connected to the ohmic contact interface B with the upper nitride cladding layer 40 to the atmosphere. The p-type electrode pad 60 is formed using the layer 100 and the metal wire film. When the p-type electrode pad 60 is formed, the electrical insulation layer 140 is used to electrically insulate the side of the light emitting structure.

Further, the shape of the structure according to another light emitting structure removal process to expose a portion of the lower nitride-based cladding layer 20 of the light emitting structure for the light emitting diode device is to form the n-type contact electrode and electrode pad 70 It may be changed in various forms according to the position, electrode shape and size.

Furthermore, although not shown in FIG. 11, a heterogeneous material, a fluorescent material, a non-reflective material that is transparent or electrically conductive on the semiconductor layer 100 of the thin film structure for the schottky diode device to improve external light emitting efficiency. A functional thin film layer, such as an anti-reflective material or a light filtering material, may be formed, and a surface irregularity process may be introduced before and after forming the functional thin film layer.

12 is a cross-sectional view of a group III-nitride semiconductor light emitting diode device shown as a third embodiment of the present invention.

Referring to FIG. 12, first, a growth substrate 10 for growing a light emitting structure for a group III nitride semiconductor light emitting diode device is prepared, and an n-type conductive nitride-based semiconductor material is formed on the growth substrate 10. The lower nitride cladding layer 20, the nitride active layer 30, and the upper nitride cladding layer 40 composed of a p-type conductive nitride-based semiconductor material are sequentially formed. As the growth substrate 10, a sapphire substrate may be used, and the lower nitride-based cladding layer 20 and the upper nitride-based cladding layer 40 may form GaN layers and AlGaN layers, respectively, as described above. It may be made by the MOCVD process. Subsequently, the light emitting structure for the light emitting diode device grown on the growth substrate 10 and the upper nitride-based cladding of the light emitting structure by the wafer bonding using the transparent material dissimilar material layer 130 and the separation process of the support substrate 80. The heterogeneous material layer 130 for transparent bonding in contact with the layer 40 and the ohmic contact interface (F), for the schottky diode device bonded to the schottky contact interface (E) on the transparent bonding heterogeneous material layer (130) The semiconductor layer 100 of the thin film structure is sequentially formed. Subsequently, the semiconductor layer 100 of the thin film structure for the schottky diode device, the heterogeneous material layer 130 for the transparent bonding, and the upper nitride layer to expose a portion of the lower nitride cladding layer 20 of the light emitting diode light emitting structure. A portion of the cladding layer 40 and the nitride based active layer 30 is removed. The lower nitride cladding layer 20 exposed to the atmosphere and the semiconductor layer 100 of the thin film structure for the schottky diode device are electrically connected to each other using a metal wire film, and the side surface of the light emitting structure is formed using the electrical insulating layer 140. The n-type contact electrode and the electrode pad 70 are insulated from each other. An interface 160 between the n-type contact electrode and electrode pad 70, which is the metal wire film, and the lower nitride-based cladding layer 20, and the n-type contact electrode and electrode pad 70, which is a metal wire film, and the thin film structure for the schottky diode device. All of the interfaces 153 between the semiconductor layers 100 are preferably formed in ohmic contact. In addition, the semiconductor of the thin film structure for the schottky diode device is exposed by exposing a portion of the transparent material heterogeneous layer 130 directly connected to the upper nitride-based cladding layer 40 to the ohmic contact interface F to the atmosphere. The p-type electrode pad 60 is formed using the layer 100 and the metal wire film. When the p-type electrode pad 60 is formed, the insulating layer 140 is electrically insulated from the side surface of the light emitting structure by using the electrical insulating layer 140.

Further, the shape of the structure according to another light emitting structure removal process to expose a portion of the lower nitride-based cladding layer 20 of the light emitting structure for the light emitting diode device is to form the n-type contact electrode and electrode pad 70 It may be changed in various forms according to the position, electrode shape and size.

Furthermore, although not shown in FIG. 12, a heterogeneous material, a fluorescent material, and an anti-reflective material which are transparent, electrically insulating or electrically conductive, are formed on the semiconductor layer of the thin film structure for the schottky diode device to improve external light emission efficiency. reflective cladding layer 40, a transparent bonding different material layer 130, a schottky diode (not shown), or a functional thin film layer such as a reflective or light filtering material. A surface uneven process may be introduced to the surface of the functional thin film layer including the semiconductor layer 100 or the electrical insulation layer 140 of the device thin film structure.

In addition, the light emitted from the nitride-based active layer 30 of the LED device is reflected on the back-side of the growth substrate 10 in order to redirect the light emitted in the direction of the growth substrate 10 in the opposite direction upward. It is desirable to form the material 160.

Fig. 13 is a sectional view of a group III-nitride semiconductor light emitting diode device shown as a fourth embodiment manufactured by the present invention.

Referring to FIG. 13, first, a growth substrate 10 for growing a light emitting structure for a group III nitride semiconductor light emitting diode device is prepared, and an n-type conductive nitride-based semiconductor material is formed on the growth substrate 10. The lower nitride cladding layer 20, the nitride active layer 30, and the upper nitride cladding layer 40 composed of a p-type conductive nitride-based semiconductor material are sequentially formed. As the growth substrate 10, a sapphire substrate may be used, and the lower nitride-based cladding layer 20 and the upper nitride-based cladding layer 40 may form GaN layers and AlGaN layers, respectively, as described above. It may be made by the MOCVD process. Subsequently, the light emitting structure for the light emitting diode device grown on the growth substrate 10 and the upper nitride-based cladding of the light emitting structure by the wafer bonding using the transparent material dissimilar material layer 130 and the separation process of the support substrate 80. A layer 120 of a transparent bonding material which is in contact with the layer 40 at an ohmic contact interface H and a layer 130 which is in contact with the ohmic contact interface G at an ohmic contact interface G The semiconductor layer 100 of the thin film structure is sequentially formed. Subsequently, the semiconductor layer 100 of the thin film structure for the schottky diode device, the heterogeneous material layer 130 for the transparent bonding, and the upper nitride layer to expose a portion of the lower nitride cladding layer 20 of the light emitting diode light emitting structure. A portion of the cladding layer 40 and the nitride based active layer 30 is removed. The lower nitride cladding layer 20 exposed to the atmosphere and the semiconductor layer 100 of the thin film structure for the schottky diode device are electrically connected to each other using a metal wire film, and the side surface of the light emitting structure is formed using the electrical insulating layer 140. The n-type contact electrode and the electrode pad 70 are insulated from each other. The interface 160 between the n-type contact electrode and electrode pad 70, which is the metal wire film, and the lower nitride-based cladding layer 20 is in ohmic contact, whereas the n-type contact electrode and electrode pad 70, which is a metal wire film, The interface 154 between the semiconductor layers 100 of the thin film structure for the schottky diode device should form a schottky interface. The semiconductor of the thin film structure for the schottky diode device is exposed by exposing a portion of the transparent material heterogeneous layer 130 directly connected to the upper nitride-based cladding layer 40 to the ohmic contact interface H to the atmosphere. The p-type electrode pad 60 is formed using the layer 100 and the metal wire film. When the p-type electrode pad 60 is formed, the p-type electrode pad 60 is electrically insulated from the side surface of the light emitting structure by using the electrical insulating layer 140.

Further, the shape of the structure according to another light emitting structure removal process to expose a portion of the lower nitride-based cladding layer 20 of the light emitting structure for the light emitting diode device is to form the n-type contact electrode and electrode pad 70 It may be changed in various forms according to the position, electrode shape and size.

Furthermore, although not shown in FIG. 13, a heterogeneous material, a fluorescent material, and an anti-reflective material which are transparent or electrically conductive on the semiconductor layer of the thin film structure for the schottky diode device to improve external light emission efficiency. A functional thin film layer, such as a reflective material or a light filtering material, may be formed, and the upper nitride-based cladding layer 40, the dissimilar material layer 130 for transparent bonding, and the schottky diode may be formed. A surface uneven process may be introduced to the surface of the functional thin film layer including the semiconductor layer 100 or the electrical insulation layer 140 of the device thin film structure.

The back-side of the growth substrate 10 may be made of a reflective material such that the light emitted from the nitride-based active layer 30 of the LED device is directed in a direction opposite to the upward direction, It is desirable to form the material 160.

Although the preferred embodiments of the present invention have been described in detail above, those skilled in the art will understand that various modifications and equivalent other embodiments are possible therefrom. Accordingly, the scope of the present invention is not limited thereto, and various modifications and improvements of those skilled in the art using the basic concept of the present invention as defined in the following claims also fall within the scope of the present invention.

1 is a cross-sectional view showing a representative example of a conventional group 3 nitride-based semiconductor light emitting diode (LED) device,

2 is a cross-sectional view of a group III-nitride-based semiconductor light emitting diode (LED) device for preventing electrostatic discharge (ESD),

3 is a cross-sectional view of a thin film structure for a schottky diode device formed on a supporting substrate according to the present invention;

FIG. 4 is a cross-sectional view of a thin-film structure for a group III nitride-based semiconductor light-emitting diode device and a thin-film structure for a schottky diode according to the present invention bonded by a wafer bonding process using a layer of a material for reflective bonding, Cross section of a composite structure,

5 is a wafer bonding process using a light emitting structure for a group III nitride semiconductor light emitting diode (LED) device and a thin film structure for a schottky diode device according to the present invention using a heterogeneous material layer for reflective bonding; Is a cross-sectional view of another composite structure bonded together,

6 is a wafer bonding process using a light emitting structure for a group III nitride semiconductor light emitting diode (LED) device and a thin film structure for a schottky diode device according to the present invention using a heterogeneous material layer for transparent bonding; Is a cross-sectional view of a composite structure bonded by

7 is a wafer bonding process using a heterogeneous layer for transparent bonding between a light emitting structure for a group III nitride semiconductor light emitting diode (LED) device and a thin film structure for a schottky diode device according to the present invention. Is a cross-sectional view of another composite structure bonded together,

FIG. 8 is a cross-sectional view of the wafer bonded composite structure according to the present invention after the support substrate of the thin film structure for the schottky diode is lifted off.

FIG. 9 is a plan view of the wafer bonded composite structure according to the present invention after the support substrate of the thin film structure for the schottky diode is lifted off.

10 is a cross-sectional view of a group III-nitride semiconductor light emitting diode (LED) device shown as a first embodiment manufactured by the present invention;

11 is a cross-sectional view of a group III-nitride semiconductor light emitting diode (LED) device shown as a second embodiment produced by the present invention;

12 is a cross-sectional view of a group III-nitride semiconductor light emitting diode (LED) device shown as a third embodiment of the present invention,

FIG. 13 is a cross-sectional view of a group III nitride semiconductor light emitting diode (LED) device shown as a fourth embodiment manufactured by the present invention. FIG.

Claims (41)

Growth substrate; A light emitting structure for a light emitting diode device including a lower nitride based cladding layer formed on the growth substrate, a nitride based cladding layer and an upper nitride based cladding layer positioned on a portion of the lower nitride based cladding layer; A light emitting diode device having a group III nitride semiconductor horizontal structure including a group III nitride-based semiconductor horizontal structure including a heterogeneous material layer for forming an ohmic contact interface and a schottky contact interface between the light emitting structure for the light emitting diode device and the thin film structure for the schottky diode device. ; An n-type contact electrode and an electrode pad which forms an ohmic contact interface with the thin film structure for the schottky diode element and is connected to the lower nitride-based cladding layer, A light emitting diode device having a group 3 nitride-based semiconductor horizontal structure having improved electrical characteristics, including a p-type electrode pad positioned on a portion of an upper portion of the reflective material hetero material layer. The method of claim 1, The upper nitride-based cladding layer has a superlattice structure, n-type InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type InGaN, AlInN, InN, AlGaN, or a surface formed of nitrogen polarity ( A light emitting diode device having a group III nitride-based semiconductor horizontal structure including a surface modification layer which is a group III nitride having a nitrogen-polar surface. The method of claim 2, Wherein the superlattice structure comprises a nitride or carbon nitride group containing Group 2, Group 3, or Group 4 elements, and the group III nitride-based semiconductor horizontal structure has a horizontal lattice structure. The method of claim 1, And a group III-nitride-based semiconductor horizontal structure electrically isolated from a side surface of the light emitting structure for the light emitting diode device and interposed between an n-type contact electrode and an electrode pad. The method of claim 1, A light emitting diode device having a group III-nitride-based semiconductor horizontal structure in which electrical insulation layers are interposed between a side surface of the thin film structure for the schottky diode device and an p-type electrode pad. The method of claim 1, The thin film structure for the schottky diode device is a light emitting diode device having a Group 3 nitride-based semiconductor horizontal structure composed of n-type alone or p-type single semiconductor thin films, not a p-n junction structure. The method of claim 1, The material constituting the thin film structure for the schottky diode device may be silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), or silicon irrelevant to crystalline (amorphous, polycrystalline, or single crystal). Group III nitride, single layer or multilayer consisting of carbide (SiC), silicon carbon nitride (SiCN), group 2-6 compounds, or group 3-5 compounds A light emitting diode device having a horizontal semiconductor structure. The method of claim 1, The heterogeneous material layer for reflective coupling may have a structure such as Al, Ag, Rh, Pd, Pt, Au, Ni, Cr, an alloy thereof, or a distributed Bragg reflector (DBR) and omni-directional reflectror (ODR) layer. A light emitting diode device having a group III nitride-based semiconductor horizontal structure formed. Growth substrate; A light emitting structure for a light emitting diode device including a lower nitride based cladding layer formed on the growth substrate, a nitride based cladding layer and an upper nitride based cladding layer positioned on a portion of the lower nitride based cladding layer; A light emitting diode device of a group III nitride semiconductor horizontal structure including a group III nitride semiconductor horizontal structure including a light emitting structure for a light emitting diode device and a heterogeneous material layer for forming an ohmic contact interface and an ohmic contact interface between a thin film structure for a schottky diode device in; An n-type contact electrode and an electrode pad forming a schottky contact interface with the thin film structure for the schottky diode element and connected to the lower nitride-based cladding layer, A light emitting diode device having a group 3 nitride-based semiconductor horizontal structure having improved electrical characteristics, including a p-type electrode pad positioned on a portion of an upper portion of the reflective material hetero material layer. The method of claim 9, The upper nitride-based clad layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, A light emitting diode device having a group III nitride-based semiconductor horizontal structure including a surface modification layer which is a group III nitride having a nitrogen-polar surface. The method of claim 10, Wherein the superlattice structure comprises a nitride or carbon nitride group containing Group 2, Group 3, or Group 4 elements, and the group III nitride-based semiconductor horizontal structure has a horizontal lattice structure. The method of claim 9, And a group III-nitride-based semiconductor horizontal structure electrically isolated from a side surface of the light emitting structure for the light emitting diode device and interposed between an n-type contact electrode and an electrode pad. The method of claim 9, A light emitting diode device having a group III-nitride-based semiconductor horizontal structure in which electrical insulation layers are interposed between a side surface of the thin film structure for the schottky diode device and an p-type electrode pad. The method of claim 9, The thin film structure for the schottky diode device is a light emitting diode device having a group 3 nitride-based semiconductor horizontal structure composed of n-type alone or p-type single semiconductor thin films, not a p-n junction structure. The method of claim 9, The material constituting the thin film structure for the schottky diode device may be silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), or silicon irrelevant to crystalline (amorphous, polycrystalline, or single crystal). Group III nitride, single layer or multilayer consisting of carbide (SiC), silicon carbon nitride (SiCN), group 2-6 compounds, or group 3-5 compounds A light emitting diode device having a horizontal semiconductor structure. The method of claim 9, The heterogeneous material layer for reflective coupling may have a structure such as Al, Ag, Rh, Pd, Pt, Au, Ni, Cr, an alloy thereof, or a distributed Bragg reflector (DBR) and omni-directional reflectror (ODR) layer. A light emitting diode device having a group III nitride-based semiconductor horizontal structure. Growth substrate; A light emitting structure for a light emitting diode device including a lower nitride based cladding layer formed on the growth substrate, a nitride based cladding layer and an upper nitride based cladding layer positioned on a portion of the lower nitride based cladding layer; A light emitting diode device of a group III nitride semiconductor horizontal structure including a group III nitride-based semiconductor horizontal structure comprising a heterogeneous material layer for forming an ohmic contact interface and a schottky contact interface between the light emitting structure for the light emitting diode device and the thin film structure for the schottky diode device, respectively. ; An n-type contact electrode and an electrode pad which forms an ohmic contact interface with the thin film structure for the schottky diode element and is connected to the lower nitride-based cladding layer, A light emitting diode device having a group 3 nitride-based semiconductor horizontal structure having improved electrical characteristics, including a p-type electrode pad positioned on a portion of an upper portion of the transparent material hetero material layer. The method of claim 17, The upper nitride-based clad layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, A light emitting diode device having a group III nitride-based semiconductor horizontal structure including a surface modification layer which is a group III nitride having a nitrogen-polar surface. The method of claim 18, Wherein the superlattice structure comprises a nitride or carbon nitride group containing Group 2, Group 3, or Group 4 elements, and the group III nitride-based semiconductor horizontal structure has a horizontal lattice structure. The method of claim 17, And a group III-nitride-based semiconductor horizontal structure electrically isolated from a side surface of the light emitting structure for the light emitting diode device and interposed between an n-type contact electrode and an electrode pad. The method of claim 17, And a group III-nitride-based semiconductor horizontal structure electrically disconnected between a side surface of the thin film structure for the schottky diode device and a p-type electrode pad. The method of claim 17, The thin film structure for the schottky diode device is a light emitting diode device having a group 3 nitride-based semiconductor horizontal structure composed of n-type alone or p-type single semiconductor thin films, not a p-n junction structure. The method of claim 17, The material constituting the thin film structure for the schottky diode device may be silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), or silicon irrelevant to crystalline (amorphous, polycrystalline, or single crystal). Group III nitride, single layer or multilayer consisting of carbide (SiC), silicon carbon nitride (SiCN), group 2-6 compounds, or group 3-5 compounds A light emitting diode device having a horizontal semiconductor structure. The method of claim 17, The group III nitride-based semiconductor layer formed of NiO, Au, IrO2, Ir, RuO2, Ru, Pt, PtO, Pd, PdO, ITO, ZnO, IZO, ZITO, SnO2, In2O3, Light emitting diode device of structure. Growth substrate; A light emitting structure for a light emitting diode device including a lower nitride based cladding layer formed on the growth substrate, a nitride based cladding layer and an upper nitride based cladding layer positioned on a portion of the lower nitride based cladding layer; A light emitting diode device of a group III nitride semiconductor horizontal structure including a group III nitride-based semiconductor horizontal structure including a heterogeneous material layer for forming an ohmic contact interface and an ohmic contact interface between the light emitting structure for the light emitting diode device and the thin film structure for the schottky diode device, respectively. ; An n-type contact electrode and an electrode pad forming a schottky contact interface with the thin film structure for the schottky diode element and connected to the lower nitride-based cladding layer, A light emitting diode device having a group 3 nitride-based semiconductor horizontal structure having improved electrical characteristics, including a p-type electrode pad positioned on a portion of an upper portion of the transparent material hetero material layer. The method of claim 25, The upper nitride-based clad layer may be formed of a superlattice structure, n-type conductive InGaN, GaN, AlInN, AlN, InN, AlGaN, p-type conductive InGaN, AlInN, InN, AlGaN, A light emitting diode device having a group III nitride-based semiconductor horizontal structure including a surface modification layer which is a group III nitride having a nitrogen-polar surface. The method of claim 26, Wherein the superlattice structure comprises a nitride or carbon nitride group containing Group 2, Group 3, or Group 4 elements, and the group III nitride-based semiconductor horizontal structure has a horizontal lattice structure. The method of claim 25, And a group III-nitride-based semiconductor horizontal structure electrically isolated from a side surface of the light emitting structure for the light emitting diode device and interposed between an n-type contact electrode and an electrode pad. The method of claim 25, A light emitting diode device having a group III-nitride-based semiconductor horizontal structure in which electrical insulation layers are interposed between a side surface of the thin film structure for the schottky diode device and an p-type electrode pad. The method of claim 25, The thin film structure for the schottky diode device is a light emitting diode device having a group 3 nitride-based semiconductor horizontal structure composed of n-type alone or p-type single semiconductor thin films, not a p-n junction structure. The method of claim 25, The material constituting the thin film structure for the schottky diode device may be silicon (Si), low manganese (Ge), carbon (C), silicon low manganese (SiGe), or silicon irrelevant to crystalline (amorphous, polycrystalline, or single crystal). Group III nitride, single layer or multilayer consisting of carbide (SiC), silicon carbon nitride (SiCN), group 2-6 compounds, or group 3-5 compounds A light emitting diode device having a horizontal semiconductor structure. The method of claim 25, The group III nitride-based semiconductor layer formed of NiO, Au, IrO2, Ir, RuO2, Ru, Pt, PtO, Pd, PdO, ITO, ZnO, IZO, ZITO, SnO2, In2O3, Light emitting diode device of structure. Forming a thin film structure for a schottky diode device on a supporting substrate; Forming a light emitting structure for the group III nitride semiconductor light emitting diode device on the growth substrate; Forming a composite structure in which the prepared two structures are joined to each other by introducing a conductive or heterogeneous material layer for reflective or transparent bonding; Separating the support substrate of the thin film structure for the schottky diode device from the combined composite structure; After removing a part of the light emitting structure for the light emitting diode device from the composite structure in which the support substrate is separated, the lower nitride cladding layer, which is an n-type conductive semiconductor material exposed to the atmosphere, and the semiconductor layer of the thin film structure for the schottky diode device are exposed. Forming an n-type contact electrode and an electrode pad in the form of a metal wire for electrical connection; Forming a p-type electrode pad in the form of a metal wire formed on an upper portion of the heterogeneous material layer for the reflective or transparent bonding from which a portion of the thin film structure for the schottky diode device is removed; Light emitting diode device manufacturing method. The method of claim 33, wherein The support substrate for forming the thin film structure for the schottky diode device may be used without limitation as long as it is a substrate material capable of forming a solid semiconductor, and may include sapphire, glass, aluminum nitride, and gallium acetate. A method of manufacturing a light emitting diode device having a Group 3 nitride-based semiconductor horizontal structure, which is nitride (GaAs), silicon (Si), low manganese (Ge), silicon low manganese (SiGe), or zinc oxide (ZnO). The method of claim 33, wherein The wafer-to-wafer bonding is performed by introducing a reflective or transparent heterogeneous material layer that can further enhance the mechanical bonding force between the group III nitride-based semiconductor light emitting diode device light emitting structure and the schottky diode device thin film structure. A method of manufacturing a light emitting diode device having a group 3 nitride-based semiconductor horizontal structure which is bonded by a temperature of less than or equal to ℃ and a hydrostatic pressure to form a composite structure. The method of claim 33, wherein The support substrate separation is selected according to the support substrate material, which is a group III nitride semiconductor using at least one of chemical wet etching (CLO), chemical-mechanical polishing (CMP), or laser lift off (LLO) processes. Method of manufacturing a light emitting diode device having a horizontal structure. The method of claim 33, wherein The method of manufacturing a light emitting diode device of a group III nitride semiconductor horizontal structure in which the light emitting structure for the light emitting diode device and the thin film structure for the schottky diode device are etched on the front surface or in a predetermined shape and a numerical value. The method of claim 33, wherein The growth or deposition of the thin film structure for the schottky diode device is a method of manufacturing a light emitting diode device having a group III nitride-based semiconductor horizontal structure using CVD, MBE, sputtering, pulsed laser deposition, evaporation, ion-beam deposition. The method of claim 33, wherein In the method of manufacturing a light emitting diode device having a reflective coupling heterogeneous material layer below the semiconductor layer of the thin film structure for the schottky diode device, the heterogeneous transparent electrical insulating or electrically conductive layer is formed on the semiconductor layer of the thin film structure for the schottky diode device. Group III-nitride-based semiconductor light-emitting diodes forming a functional thin film layer such as a material, a fluorescent material, an anti-reflective material, or a light filtering material Manufacturing method. The method of claim 33, wherein In the method of manufacturing a light emitting diode device having a transparent bonding heterogeneous material layer below the semiconductor layer of the thin film structure for the schottky diode device, the heterogeneous transparent electrical insulating or electrically conductive layer is formed on the semiconductor layer of the thin film structure for the schottky diode device. Group III-nitride-based semiconductor light-emitting diodes forming a functional thin film layer such as a material, a fluorescent material, an anti-reflective material, or a light filtering material Manufacturing method. The method of claim 40, A method of manufacturing a light emitting diode device having a group III nitride semiconductor horizontal structure in which surface irregularities are introduced into the upper nitride cladding layer, a dissimilar material layer for transparent bonding, a semiconductor layer of a thin film structure for a schottky diode device, or a functional thin film layer.

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