KR20090103141A - 초고속 레이저를 이용한 초발수성 표면개질 방법 - Google Patents
초고속 레이저를 이용한 초발수성 표면개질 방법Info
- Publication number
- KR20090103141A KR20090103141A KR1020080028544A KR20080028544A KR20090103141A KR 20090103141 A KR20090103141 A KR 20090103141A KR 1020080028544 A KR1020080028544 A KR 1020080028544A KR 20080028544 A KR20080028544 A KR 20080028544A KR 20090103141 A KR20090103141 A KR 20090103141A
- Authority
- KR
- South Korea
- Prior art keywords
- laser
- substrate
- ultra
- pdms
- modification method
- Prior art date
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70008—Production of exposure light, i.e. light sources
- G03F7/70025—Production of exposure light, i.e. light sources by lasers
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Laser Beam Processing (AREA)
Abstract
Description
Claims (8)
- PDMS를 포함하는 고분자 기판의 표면에 초고속 레이저의 빔을 고분자 기판의 표면에 조사하여 수~수백 마이크론 이하의 마이크로 사이즈 미세구조가 수~수백 나노미터 이하의 나노 사이즈 미세구조를 갖도록 하며 90˚ 내지 170˚ 의 접촉각과 3˚이하의 슬라이딩 각을 갖는 초발수성 표면을 갖도록 고분자 기판의 표면을 개질하는 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 1 항에 있어서,상기 초고속 레이저는 펨토초 펄스를 갖는 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 2 항에 있어서,상기 초고속 레이저빔의 파장은 700~1100 nm이고, 펄스폭은 100~700 fs 이며, 기판의 이송속도는 3~5 mm/sec이고, 레이저빔 spot 사이의 간격은 3~20 ㎛이며, 펨토초 레이저 빔의 초점을 조정하기 위한 대물렌즈의 색수차(N.A.)는 0.1~0.2이고, 기판 표면의 레이저빔 spot 크기는 6~20 ㎛인 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 3 항에 있어서,90˚ 내지 170˚ 의 접촉각을 갖는 상기 초고속 레이저의 플루언스는 2 내지 8 J/cm2 인 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 4 항에 있어서,기판 표면에 조사되는 평균 레이저 펄스의 수는 1.5~2.5 인 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 3 항에 있어서,3˚ 이하의 슬라이딩 각을 갖는 상기 초고속 레이저의 플루언스는 4 내지 8 J/cm2 인 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- 제 4 항에 있어서,기판 표면에 조사되는 평균 레이저 펄스의 수는 1.5~2.5 인 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
- a) 제 1 항 내지 제 7 항에서 선택되는 어느 한 항의 방법에 의해 초발수성 표면개질된 기판을 모재로 하여 표면개질된 기판의 면상에 고분자 몰드를 채우고 경화시켜 기판의 면과 동일하게 복제하는 단계;b) 복제된 몰드를 상기 기판으로부터 분리시키는 단계;c) 분리된 복제된 몰드를 모재로 하여 복제된 몰드의 복제된 면에 고분자 몰드를 채우고 경화시켜 복제된 몰드의 면과 동일하게 복제하는 단계;d) c)단계를 반복하는 단계;를 포함하여 이루어지는 것을 특징으로 하는 초고속 레이저를 이용한 초발수성 표면개질 방법.
Priority Applications (1)
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KR1020080028544A KR100928057B1 (ko) | 2008-03-27 | 2008-03-27 | 초고속 레이저를 이용한 초발수성 표면개질 방법 |
Applications Claiming Priority (1)
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KR1020080028544A KR100928057B1 (ko) | 2008-03-27 | 2008-03-27 | 초고속 레이저를 이용한 초발수성 표면개질 방법 |
Publications (2)
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KR20090103141A true KR20090103141A (ko) | 2009-10-01 |
KR100928057B1 KR100928057B1 (ko) | 2009-11-23 |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101712102B (zh) * | 2009-09-15 | 2012-08-15 | 江苏大学 | 仿生金属超润湿跨尺度结构设计方法与制备方法 |
CN103282133A (zh) * | 2010-10-28 | 2013-09-04 | 3M创新有限公司 | 超疏水性膜 |
KR101425190B1 (ko) * | 2012-10-09 | 2014-08-04 | 한국기계연구원 | 레이저 어블레이션을 이용한 금형 표면 마이크로 구조물 형성방법 |
CN108255013A (zh) * | 2018-02-24 | 2018-07-06 | 安徽工程大学 | 一种增大光刻胶光栅掩模占宽比的加工方法 |
CN108376838A (zh) * | 2018-04-11 | 2018-08-07 | 中北大学 | 基于pdms封装技术的微流体超材料结构 |
CN109226973A (zh) * | 2018-10-30 | 2019-01-18 | 江苏大学 | 一种激光-电化学沉积制备仿生超疏水金属表面的系统及方法 |
CN109357796A (zh) * | 2018-11-23 | 2019-02-19 | 华东理工大学 | 可穿戴压力传感器及其制造方法 |
KR20210142940A (ko) * | 2020-05-19 | 2021-11-26 | 서울대학교산학협력단 | 신축성 겹눈 구조 모사 렌즈 및 그 제조 방법 |
CN116265595A (zh) * | 2021-12-17 | 2023-06-20 | 中国科学院长春光学精密机械与物理研究所 | 防腐蚀铝合金及其制备方法 |
Family Cites Families (3)
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JP2000103882A (ja) * | 1998-09-28 | 2000-04-11 | Dow Corning Asia Ltd | 表面処理されたポリシルメチレン成形体及びその表面処理方法 |
JP4675453B2 (ja) | 2000-04-26 | 2011-04-20 | リコーマイクロエレクトロニクス株式会社 | プラスチック表面の撥水処理方法 |
JP4179984B2 (ja) | 2003-12-17 | 2008-11-12 | 日東電工株式会社 | 高撥水性構造体およびその製造方法 |
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101712102B (zh) * | 2009-09-15 | 2012-08-15 | 江苏大学 | 仿生金属超润湿跨尺度结构设计方法与制备方法 |
CN103282133A (zh) * | 2010-10-28 | 2013-09-04 | 3M创新有限公司 | 超疏水性膜 |
KR101425190B1 (ko) * | 2012-10-09 | 2014-08-04 | 한국기계연구원 | 레이저 어블레이션을 이용한 금형 표면 마이크로 구조물 형성방법 |
CN108255013A (zh) * | 2018-02-24 | 2018-07-06 | 安徽工程大学 | 一种增大光刻胶光栅掩模占宽比的加工方法 |
CN108376838A (zh) * | 2018-04-11 | 2018-08-07 | 中北大学 | 基于pdms封装技术的微流体超材料结构 |
CN109226973A (zh) * | 2018-10-30 | 2019-01-18 | 江苏大学 | 一种激光-电化学沉积制备仿生超疏水金属表面的系统及方法 |
CN109357796A (zh) * | 2018-11-23 | 2019-02-19 | 华东理工大学 | 可穿戴压力传感器及其制造方法 |
KR20210142940A (ko) * | 2020-05-19 | 2021-11-26 | 서울대학교산학협력단 | 신축성 겹눈 구조 모사 렌즈 및 그 제조 방법 |
CN116265595A (zh) * | 2021-12-17 | 2023-06-20 | 中国科学院长春光学精密机械与物理研究所 | 防腐蚀铝合金及其制备方法 |
CN116265595B (zh) * | 2021-12-17 | 2023-09-05 | 中国科学院长春光学精密机械与物理研究所 | 防腐蚀铝合金及其制备方法 |
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KR100928057B1 (ko) | 2009-11-23 |
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