KR20090071038A - Composition for resin black matrix - Google Patents
Composition for resin black matrix Download PDFInfo
- Publication number
- KR20090071038A KR20090071038A KR1020070139230A KR20070139230A KR20090071038A KR 20090071038 A KR20090071038 A KR 20090071038A KR 1020070139230 A KR1020070139230 A KR 1020070139230A KR 20070139230 A KR20070139230 A KR 20070139230A KR 20090071038 A KR20090071038 A KR 20090071038A
- Authority
- KR
- South Korea
- Prior art keywords
- anhydride
- compound
- black matrix
- acid
- formula
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133512—Light shielding layers, e.g. black matrix
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
- G02F1/133509—Filters, e.g. light shielding masks
- G02F1/133514—Colour filters
- G02F1/133516—Methods for their manufacture, e.g. printing, electro-deposition or photolithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
- G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/029—Inorganic compounds; Onium compounds; Organic compounds having hetero atoms other than oxygen, nitrogen or sulfur
- G03F7/0295—Photolytic halogen compounds
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
- G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
- G03F7/031—Organic compounds not covered by group G03F7/029
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0388—Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Inorganic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Optical Filters (AREA)
- Materials For Photolithography (AREA)
Abstract
Description
본 발명은 디스플레이용 수지 블랙 매트릭스 등에 사용되는 감광성 수지 조성물에 관한 것으로, 특히 액정 디스플레이 장치의 컬러필터에 사용되는 수지 블랙 매트릭스 조성에 관한 것이다. TECHNICAL FIELD The present invention relates to a photosensitive resin composition used for a resin black matrix for display, and more particularly, to a resin black matrix composition used for a color filter of a liquid crystal display device.
액정 디스플레이 장치는 CRT와는 달리 자기발광성이 없어 후광이 필요하지만 동작 전압이 낮아 소비 전력이 적고, 휴대용으로 쓰일 수 있어 손목시계, 컴퓨터, 텔레비전 등에 널리 쓰이고 있는 평판 디스플레이의 일종이다. Unlike CRTs, a liquid crystal display device requires a halo because it does not emit light. However, since the operating voltage is low, power consumption is low, and a liquid crystal display device is a flat panel display widely used in watches, computers, and televisions because it can be used as a portable device.
널리 쓰이고 있는 박막트랜지스터 액정디스플레이(TFT-LCD)는 박막 트랜지스터와 화소 전극이 배열되어 있는 하판과; 색상을 나타내기 위한 컬러 필터 및 공통 전극으로 구성된 상판; 그리고 이 두 유리 기판 사이에 채워져 있는 액정으로 구성되어 있으며, 두 유리 기판의 양쪽 면에는 가시광선(자연광)을 선편광하여 주는 편광판이 각각 부착되어 있는 방식이다. 외부의 주변회로에 의해 화소를 이루고 있는 TFT의 게이트에 전압을 인가하여 트랜지스터를 turn-on 상태로 하여 액정에 영상전압이 입력될 수 있는 상태가 되도록 한 후 영상전압을 인가하여 액정에 영상정보를 저장한 뒤 트랜지스터를 turn-off하여 액정 충전기 및 보조 충전기에 저장된 전하가 보존되도록 하여 일정한 시간 동안 영상 이미지를 표시하도록 한다. 액정에 전압을 인가하면 액정의 배열이 변화하게 되는데 이 상태의 액정을 빛이 투과하게 되면 회절이 일어나게 된다. 이 빛을 편광판에 투과시켜 원하는 영상을 얻게 된다. Widely used thin film transistor liquid crystal displays (TFT-LCDs) include: a lower plate on which thin film transistors and pixel electrodes are arranged; An upper plate composed of a color filter and a common electrode for displaying colors; And it consists of liquid crystals filled between these two glass substrates, and the polarizing plate which linearly polarizes visible light (natural light) is attached to both surfaces of both glass substrates, respectively. The voltage is applied to the gate of the TFT forming the pixel by an external peripheral circuit so that the transistor is turned on so that the image voltage can be input to the liquid crystal, and then the image voltage is applied to the liquid crystal. After storage, the transistor is turned off to preserve the charge stored in the liquid crystal charger and the auxiliary charger, allowing the image to be displayed for a period of time. When voltage is applied to the liquid crystal, the arrangement of the liquid crystal changes. When light passes through the liquid crystal in this state, diffraction occurs. The light is transmitted through the polarizer to obtain a desired image.
상기 컬러필터는 통상적으로 플라스틱 또는 유리로 된 투명기판 상부면에 블랙 매트릭스를 형성하고, 레드, 그린, 블루 등의 다른 색상이 포토리소그래피(photolithography)법이나 인쇄법, 잉크젯방법 등으로 순차, 스트라이프상 또는 모자이크상 등의 색패턴으로 형성된다. The color filter typically forms a black matrix on the upper surface of a transparent substrate made of plastic or glass, and other colors such as red, green, and blue are sequentially or stripe-shaped by photolithography, printing, or inkjet. Or a color pattern such as a mosaic.
이러한 컬러필터의 대표적인 제조방법은 염색법, 인쇄법, 안료분산법, 전착법 등이 있으며, 특히 색재료를 함유하는 광중합성 조성물을 투명기판 상에 도포한 다음 형성하고자 하는 패턴을 노광한 후 비노광부위를 용제로 제거하여 패턴을 형성하고, 열경화시키는 일련의 단계를 반복하는 안료분산법은 컬러필터 화소의 위치, 막두께 등의 정밀도가 높고, 내광성, 내열성 등의 내구성이 뛰어나고, 핀홀 등의 결함이 적기 때문에 널리 채용되고 있다. Representative methods of manufacturing such color filters include dyeing, printing, pigment dispersion, electrodeposition, and the like. In particular, a photopolymerizable composition containing a color material is applied onto a transparent substrate, and then a pattern to be formed is exposed, and then unexposed. The pigment dispersion method which repeats a series of steps of removing the site with a solvent to form a pattern and thermal curing, has high precision such as the position of the color filter pixel, the film thickness, etc., has excellent durability such as light resistance and heat resistance, and defects such as pinholes. It is widely adopted because of its small number.
한편, 컬러필터에 있어서 블랙 매트릭스는 액정 디스플레이의 고화질, 고대비(high contrast) 표시를 위하여 레드(R), 그린(G), 블루(B)의 3색의 픽셀 간에 색혼합을 방지하기 위하여 반드시 필요하다. 최근에 LCD의 마더글라스의 크기가 대형화되면서 블랙 매트릭스의 패턴형성에 필요한 노광량이 낮아지고 있으며, 고휘 도(1000 cd이상)의 백라이트 유닛에 의한 3색의 색혼합을 방지하기 위해서는 4.0이상의 높은 광학밀도(Optical Density)가 요구되고 있다. On the other hand, in the color filter, the black matrix must be used to prevent color mixing between the pixels of three colors of red (R), green (G), and blue (B) in order to display high-quality and high contrast of the liquid crystal display. need. Recently, as the size of the mother glass of the LCD has been enlarged, the exposure amount required to form the black matrix has been reduced, and high optical density of 4.0 or more is required to prevent color mixing of three colors by the backlight unit having a high brightness (more than 1000 cd). Optical Density is required.
종래 블랙 매트릭스를 제조하는 방법으로는 크롬 등의 금속막을 진공 증착 등의 방법으로 기판 상에 형성하고 감광성 수지를 코팅한 후 포토리소그래피로 패터닝(patterning)하고 크롬을 에칭하는 방법이 사용되었다. 크롬을 이용한 블랙 매트릭스는 박막으로 제조할 수 있고, 내화학성과 높은 차광성능을 얻을 수 있는 장점이 있지만, 광반사율이 높아 표시 품질이 저하될 뿐만 아니라 전반사를 위한 별도의 처리공정이 필요하게 되고, 크롬 스퍼터링 등의 진공 증착 프로세스가 수반되기 때문에 제조비용이 상승하며, 또한 크롬 에칭이 필요하여 에칭 공정 후 발생되는 폐액이 환경오염을 발생하는 문제점이 있다. As a method of manufacturing a black matrix, a method of forming a metal film such as chromium on a substrate by vacuum deposition or the like, coating a photosensitive resin, patterning by photolithography and etching chromium is used. The black matrix using chromium can be manufactured as a thin film, and has the advantage of obtaining chemical resistance and high light shielding performance, but due to the high light reflectivity, not only the display quality is lowered, but also a separate treatment process for total reflection is required. Since a vacuum deposition process such as chromium sputtering is involved, the manufacturing cost increases, and there is a problem that waste liquid generated after the etching process causes environmental pollution due to the need for chromium etching.
이에 수지를 사용한 블랙 매트릭스에 관한 연구가 활발하게 이루어지고 있다. 안료분산법에 의해 제조되는 블랙 매트릭스에 사용되는 감광성 수지는 크게 바인더 수지로써 지지체 역할 및 일정 두께의 유지를 가능하게 하는 고분자화합물과, 노광 시 광과 반응하여 포토레지스트상을 형성하는 광중합성 모노머의 2가지 성분으로 구성된다. 이외에는 안료, 에폭시수지, 용제와 기타 첨가제 등을 포함하는 감광성 수지 조성물에 의해 제조된다. Accordingly, studies on black matrices using resins have been actively conducted. The photosensitive resin used for the black matrix produced by the pigment dispersion method is largely a binder resin, which is a polymer compound that enables the support and maintenance of a constant thickness, and a photopolymerizable monomer that reacts with light during exposure to form a photoresist image. It consists of two components. In addition, it is produced by a photosensitive resin composition containing a pigment, an epoxy resin, a solvent and other additives.
안료분산법에 사용되는 감광성 수지로는 예를 들면, 일본특개소60-237403호에 기재된 폴리이미드수지를 포함하는 감광성 수지; 일본특개평1-200353호, 일본특개평4-7373호, 일본특개평4-91173호 등에 기재된 아크릴계 중합체와 아지드 화합물로 이루어진 감광성 수지; 일본특개평7-64281호, 일본특개평7-64282호, 일본특개평 8-278630호, 일본특개평6-1938호 및 일본특개평5-339356호 등에 기재된 카도계 바인더 수지를 포함하는 감광성 수지; 대한민국 특허공고 제97-6519호, 대한민국 특허등록 제147191호 등에 기재된 아크릴계 중합체로 이루어진 감광성 수지; 일본특개평1-152449호에 기재된 아크릴레이트 단량체, 유기중합체 결합제 및 광중합개시제로 이루어진 라디칼 중합형의 감광성 수지; 일본특개평4-163552호와 대한민국 특허공고 제92-5780호에 기재된 페놀수지, N-메틸올 구조를 갖는 가교제 및 광산발생제로 이루어진 감광성 수지 등 여러 가지가 제안되고 있다. As a photosensitive resin used for a pigment dispersion method, For example, Photosensitive resin containing the polyimide resin of Unexamined-Japanese-Patent No. 60-237403; Photosensitive resin which consists of an acryl-type polymer and an azide compound as described in Unexamined-Japanese-Patent No. 1-200353, Unexamined-Japanese-Patent No. 4-7373, etc .; Photosensitive resin containing cardo-based binder resin as described in JP-A-7-64281, JP-A-7-64282, JP-A-8-278630, JP-A 6-1938, JP-A-5-339356 and the like. ; Photosensitive resin comprising an acrylic polymer described in Korean Patent Publication No. 97-6519, Korean Patent Registration No. 147191; Radical polymerization type photosensitive resin which consists of an acrylate monomer, an organic polymer binder, and a photoinitiator of Unexamined-Japanese-Patent No. 1-152449; A variety of proposals have been made, such as phenol resins described in Japanese Patent Laid-Open No. 4-163552 and Korean Patent Publication No. 92-5780, photosensitive resins composed of a crosslinking agent having a N-methylol structure and a photoacid generator.
그러나 안료분산법에 따른 바인더수지로서 감광성 폴리이미드나 페놀계의 수지를 사용하는 것은 내열성은 높지만 감도가 낮으며 유기용매로 현상하는 등의 결점이 있고, 아지드 화합물을 감광제로 하는 종래의 시스템은 감도가 낮고 내열성이 떨어지거나 노출시에 산소의 영향을 받는 문제점이 있다. 이러한 문제점을 극복하기 위하여 산소차단막을 설치하거나 불활성 가스 중에 노출시키는 방법이 이용될 수 있으나, 이러한 방법을 적용하는 경우 공정이 복잡해지고 장치가 비싸지는 등의 문제가 발생한다. 또한 노출로 인해 생성된 산을 이용하여 화상을 형성하는 감광성 수지는 고감도이며 노출될 때 산소의 영향을 받지 않는 장점이 있지만, 노출 및 현상 과정에서 가열공정이 필요하며, 가열시간이 패턴 형성에 대해 민감한 반응을 보이므로 공정관리가 곤란하다는 문제점을 갖는다. However, the use of a photosensitive polyimide or phenolic resin as a binder resin according to the pigment dispersion method has a high heat resistance but a low sensitivity, such as developing with an organic solvent, and a conventional system using an azide compound as a photosensitive agent There is a problem that the sensitivity is low, heat resistance is poor or affected by oxygen at the time of exposure. In order to overcome this problem, a method of installing an oxygen barrier film or exposing it to an inert gas may be used. However, when such a method is applied, problems such as a complicated process and an expensive device occur. In addition, the photosensitive resin which forms an image using an acid generated by exposure has a high sensitivity and is not affected by oxygen when exposed, but a heating process is required during exposure and development, and a heating time is required for pattern formation. Because of the sensitive reaction, process control is difficult.
또한, 블랙 매트릭스의 제조시 차광성을 높이기 위하여 착색 안료의 배합량 을 많아져야 하는데, 그 결과 점도가 증가하여 취급이 곤란해지거나, 형성된 피막의 강도 또는 기판에 대한 밀착성이 현저하게 저하된다는 문제가 있다. In addition, in order to increase the light shielding property of the black matrix, the blending amount of the colored pigment should be increased. As a result, the viscosity increases, which makes handling difficult, or the strength of the formed film or the adhesion to the substrate is significantly reduced. .
패턴의 밀착성이 현저하게 저하하거나, 현상내성이 저하되어 현상마진이 감소되는 문제가 있다.There is a problem that the adhesion of the pattern is remarkably lowered, or the development resistance is lowered and the development margin is reduced.
이러한 문제를 해결하기 위해 일본 특허 공개 제 7-642181호, 제 8-278630호, 제 6-1938호, 제5-339356호 등의 특허에서는 카도기를 지닌 바인더 수지를 이용한 컬러필터 제조방법이 기술되어 있다. 일반적으로 카도기를 지닌 수지는 고감도 이면서 산소의 영향을 받지 않고 내열성, 내수축성, 투명성 등이 우수하다. 그러나 종래 특허에서 기술된 카도계 바인더는 경화에 참여하는 에틸렌기가 2개로 최근 LCD 업체에서 요구하는 고 광학밀도, 고감도의 물성을 구현하기에는 문제점이 많다. 고 광학밀도를 구현하기 위해 안료 함량이 높아짐에 따라 2개의 에틸렌기를 포함하는 카도계 바인더로는 패턴의 밀착성 및 현상마진이 매우 불량한 문제점이 있다. In order to solve this problem, Japanese Patent Laid-Open Nos. 7-642181, 8-278630, 6-1938, 5-339356 and the like disclose a color filter manufacturing method using a binder resin having a cardo group. have. In general, a resin having a cardo group is highly sensitive and is not affected by oxygen, and is excellent in heat resistance, shrinkage resistance, and transparency. However, the cardo-based binder described in the prior patent has a lot of problems to realize the high optical density, high sensitivity properties required by the LCD companies as two ethylene groups participating in the curing. As the pigment content is increased in order to realize high optical density, the cardo-based binder including two ethylene groups has a very poor adhesiveness and development margin of the pattern.
본 발명은 경화밀도를 증가시켜 고 광학밀도이면서 고 감도의 물성을 구현하는 감광성 수지 조성물을 제공하고자 한다. The present invention is to provide a photosensitive resin composition that increases the curing density to realize high optical density and high sensitivity.
즉, 기존의 블랙 매트릭스의 미흡한 물성, 즉 고 광학밀도이면서 고감도의 물성, 고 내열성. 고 밀착성, 우수패턴을 구현할 수 있는 감광성 수지 조성물을 제 공하고자 한다. In other words, the insufficient properties of the existing black matrix, that is, high optical density, high sensitivity, high heat resistance. It is to provide a photosensitive resin composition that can implement a high adhesion, excellent pattern.
본 발명의 한 구현예에서는 다음 화학식 1로 표시되는 주쇄에 에틸렌기를 포함하는 아미노기 구조를 가지는 수지 화합물을 포함하는 감광성 수지 조성물을 제공한다.One embodiment of the present invention provides a photosensitive resin composition comprising a resin compound having an amino group structure containing an ethylene group in the main chain represented by the following formula (1).
상기 식에서, A1과 A2는 서로 같거나 다른 것으로 에틸렌기를 적어도 하나 가지고 있는 알킬 화합물, 알켄 화합물 및 카르보닐 화합물 유래의 잔기이고, R1은 산무수물의 잔기이고, R2는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.Wherein A 1 and A 2 are the same as or different from each other, and are residues derived from an alkyl compound, an alkene compound and a carbonyl compound having at least one ethylene group, R 1 is a residue of an acid anhydride, and R 2 is an acid 2 anhydride Represents a residue and m: n is a ratio of 100: 0-0: 100 by molar ratio.
또한, 본 발명의 바람직한 한 구현예에서는 상기 화학식 1로 표시되는 주쇄 에 에틸렌기를 포함하는 아미노기 구조를 가지는 화합물 100중량부; (B) 다관능성 모노머 0.1~99중량부; (C) 에폭시기를 함유하는 실리콘계 화합물 0.1~80중량부; (D) 광중합 개시제 혹은 광증감제 0.01~20중량부; (E) 안료성분; 1~90 중량부 (F) 용매를 포함하는 수지 블랙 매트릭스용 감광성 수지 조성물을 제공한다.In addition, in one preferred embodiment of the present invention 100 parts by weight of a compound having an amino group structure containing an ethylene group in the main chain represented by the formula (1); (B) 0.1 to 99 parts by weight of a multifunctional monomer; (C) 0.1 to 80 parts by weight of a silicone compound containing an epoxy group; (D) 0.01 to 20 parts by weight of the photopolymerization initiator or the photosensitizer; (E) pigment component; It provides the photosensitive resin composition for resin black matrices containing 1-90 weight part (F) solvent.
본 발명 구현예들에 따른 감광성 수지 조성물에 있어서, 화학식 1로 표시되는 화합물은 A1 및 A2가 서로 같거나 다른 것으로 
본 발명 구현예들에 따른 감광성 수지 조성물에 있어서, 좋기로는 화학식 1로 표시되는 화합물은 A1 및 A2 모두 -CH2CHCH2인 것일 수 있다.In the photosensitive resin composition according to the embodiments of the present invention, preferably, the compound represented by Formula 1 may be one of A 1 and A 2, which are each —CH 2 CHCH 2 .
본 발명 구현예들에 따른 감광성 수지 조성물에 있어서, 화학식 1로 표시되는 화합물은 주쇄에 에틸렌기를 포함하는 아미노기 구조를 가지고, R1은 말레인산 무수물(Maleic anhydride), 숙신산 무수물(Succinic anhydride), 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-테트라하이드로프탈산 무수물(3,4,5,6-Tetrahydrophthalic Anhydride), 프탈산 무수물(Phthalic Anhydride), 이타콘산 무수물(Itaconic anhydride), 1,2,4-벤젠트리카복실산 무수물(1,2,4-Benzenetricarboxylic Anhydride), 메틸-테트라하이드로프 탈산 무수물(Methyl-Tetrahydrophthalic Anhydride), 시트라콘산 무수물(Citraconic Anhydride), 2,3-디메틸말레인산 무수물(2,3-Dimethylmaleic Anhydride), 1-사이클로펜텐-1,2,-디카복실산 무수물(1-Cyclopentene-1,2-Dicarboxylic anhydride), 시스(5-노보넨-엔도-2,3-디카복실산 무수물(cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) 및 1,8-나프탄산 무수물(1,8-Naphthalic Anhydride) 중에서 선택된 산무수물의 잔기인 것을 그 특징으로 하며, 또한 R2는 1,2,4,5-벤젠테트라카복실산 이무수물(1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-바이프탈산 이무수물(4,4'-Biphthalic Dianhydride), 3,3',4,4'-벤조페논테트라카복실산 이무수물(3,3',4,4'-Benzophenonetetracarboxylic Dianhydride), 피로멜리트산 이무수물(Pyromelitic Dianhydride), 1,4,5,8-나프탈렌테트라카복실산 이무수물(1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-테트라카복실산 무수물(1,2,4,5-Tetracarboxylic Anhydide), 메틸노보넨-2,3-디카복실산 무수물(Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4'-[2,2,2-트리플로로-1-(트리플로로메틸)에틸리덴]디프탈산 무수물(4,4'-[2,2,2-Trifluoro-1-(Trifluoromethyl)Ethylidene]Diphthalic Anhydride), 4,4'-옥시디프탈산 무수물(4,4`-Oxydiphthalic Anhydride) 및 에틸렌글리콜 비스(안하이드로 트리멜리테이트)(Ethylene Glycol Bis (Anhydro Trimelitate)) 중에서 선택된 산2무수물의 잔기인 것일 수 있다. In the photosensitive resin composition according to the embodiments of the present invention, the compound represented by Chemical Formula 1 has an amino group structure including an ethylene group in a main chain, and R 1 is maleic anhydride, Succinic anhydride, cis- 1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-tetrahydrophthalic anhydride (3,4,5,6-Tetrahydrophthalic Anhydride ), Phthalic Anhydride, Itaconic Anhydride, 1,2,4-Benzenetricarboxylic Anhydride (1,2,4-Benzenetricarboxylic Anhydride), Methyl-Tetrahydrophthalic Anhydride ), Citraconic anhydride, 2,3-dimethylmaleic anhydride, 1-cyclopentene-1,2, -dicarboxylic anhydride (1-Cyclopentene-1,2-Dicarboxylic) anhydride), cis (5-norbornene-endo-2,3-dicarboxylic anhydride (cis-5-Norbone ne-endo-2,3-Dicarboxylic Anhydride) and a residue of an acid anhydride selected from 1,8-naphthalic anhydride, and R 2 is 1,2,4, 5-benzenetetracarboxylic dianhydride (1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-biphthalic dianhydride (4,4'-Biphthalic Dianhydride), 3,3 ', 4,4'-benzo Phenonetetracarboxylic dianhydride (3,3 ', 4,4'-Benzophenonetetracarboxylic Dianhydride), pyromellitic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride (1,4,5, 8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-tetracarboxylic anhydride (1,2,4,5-Tetracarboxylic Anhydide), methylnorbornene-2,3-dicarboxylic anhydride (Methylnorbonene-2,3-Dicarboxylic Anhydride ), 4,4 '-[2,2,2-trifluoro-1- (trifluoromethyl) ethylidene] diphthalic anhydride (4,4'-[2,2,2-Trifluoro-1- ( Trifluoromethyl) Ethylidene] Diphthalic Anhydride), 4,4'-Oxydiphthalic Anhydride ydride) and ethylene glycol bis (anhydro trimellitate) (Ethylene Glycol Bis (Anhydro Trimelitate)) may be a residue of the acid dianhydride selected from.
또한, 화학식 1로 표시되는 화합물은 산무수물과 산2무수물의 몰비인 m:n의 비율이 100/0~50/50의 범위, 100/0~70/30의 범위, 또는 0/100~50/50의 범위에 있는 것일 수 있으며, 화학식 1로 표시되는 화합물은 전체 수지 조성물 중 5~80중량%로 포함되는 것일 수 있다.In addition, the compound represented by the formula (1) has a ratio of m: n, which is a molar ratio of acid anhydride and acid anhydride, in the range of 100/0 to 50/50, in the range of 100/0 to 70/30, or 0/100 to 50 It may be in the range of / 50, the compound represented by the formula (1) may be included in 5 to 80% by weight of the total resin composition.
또한, 본 발명 구현예들에 따른 감광성 수지 조성물에 있어서, (E)안료성분은 입자크기 50~150nm인 카본블랙이며, 전체 수지 조성물 중 1~90중량%로 포함되는 것일 수 있다. In addition, in the photosensitive resin composition according to the embodiments of the present invention, the (E) pigment component is carbon black having a particle size of 50 ~ 150nm, may be included in 1 to 90% by weight of the total resin composition.
또한, 본 발명의 예시적인 구현예에서는 이와 같은 조성물을 분산 제조하여 얻어지는 점도 1~5 cps의 범위에 있는 수지 블랙매트릭스를 제공하고, 또한 이를 코팅한 후 리소그라피에 의해 형성된 패턴에 있어서 단위 두께당(㎛) 광학밀도가 4.5~6.0 인 수지 블랙매트릭스를 제공한다. In addition, the exemplary embodiment of the present invention provides a resin black matrix having a viscosity of 1 to 5 cps obtained by dispersing and preparing such a composition, and after coating it, per unit thickness in the pattern formed by lithography ( Μm) to provide a resin black matrix having an optical density of 4.5 to 6.0.
본 발명에 따르면 광학밀도, 기판과의 밀착력, 내열성, 패턴안정성이 우수할 뿐만 아니라, 20mJ/㎠의 저노광량에서 포스트 베이크 후 매우 안정된 현상 패턴을 갖는 고 감도용 감광성 수지 조성물을 제공할 수 있으며, 이에 따라 LCD 디바이스의 다양한 종류 및 크기에 따라 신속하게 대응할 수 있으므로, 액정 디스플레이 산업에 있어서도 유용하게 활용될 수 있다.According to the present invention, it is possible to provide a highly sensitive photosensitive resin composition having not only excellent optical density, adhesion to the substrate, heat resistance and pattern stability, but also a very stable developing pattern after post-baking at a low exposure amount of 20 mJ / cm 2. Accordingly, it can quickly respond to various kinds and sizes of LCD devices, and thus can be usefully used in the liquid crystal display industry.
이와 같은 본 발명을 더욱 상세하게 설명하면 다음과 같다. The present invention will be described in more detail as follows.
(1) 화학식 1로 표시되는 화합물(1) a compound represented by formula (1)
본 발명에 따른 감광성 수지 조성물은 화학식 1로 표시되는 화합물을 포함하는데, 이는 구체적으로는 다음과 같은 방법에 의해 얻어질 수 있다: 화학식 2의 비스페놀 플루오렌형 에폭시 화합물과, 일예로 화학식 3으로 표시되는 다이 알릴아민, 화학식 4로 표시되는 모노알릴 아민, 화학식 5로 표시되는 다이 아크릴 아민, 화학식 6으로 표시되는 모노아크릴 아민 중에서 선택된 화합물(들)을 반응시켜 화학식 7로 표시되는 화합물을 합성할 수 있다. 여기서 화학식 7로 표시되는 화합물은 화학식 3으로 표시되는 다이 알릴 화합물을 반응시켜 얻어진 것을 예시한 것이나 이에 한정되는 것은 아니다. 다음으로 현상성을 부여할 수 있도록 화학식 4의 화합물을 산무수물 또는 산2무수물로 처리하면 화학식 1로 표시되는 화합물을 수득할 수 있다.The photosensitive resin composition according to the present invention includes a compound represented by Chemical Formula 1, which may be specifically obtained by the following method: a bisphenol fluorene type epoxy compound of Chemical Formula 2 and, for example, represented by Chemical Formula 3 The compound represented by the formula (7) may be synthesized by reacting the compound (s) selected from among allyl amine, the monoallyl amine represented by the formula (4), the diacryl amine represented by the formula (5), and the monoacryl amine represented by the formula (6). have. Herein, the compound represented by the formula (7) is an example obtained by reacting the diallyl compound represented by the formula (3), but is not limited thereto. Next, the compound represented by the formula (1) can be obtained by treating the compound of formula (4) with an acid anhydride or an acid 2 anhydride so as to impart developability.
화학식 1Formula 1
상기 식에서, A1과 A2는 서로 같거나 다른 것으로 에틸렌기를 적어도 하나 가지고 있는 알킬화합물, 알켄 화합물 및 카르보닐 화합물 유래의 잔기이고, R1은 산무수물의 잔기이고, R2는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.Wherein A 1 and A 2 are the same as or different from each other, and are residues derived from an alkyl compound, an alkene compound and a carbonyl compound having at least one ethylene group, R 1 is a residue of an acid anhydride, and R 2 is an acid 2 anhydride Represents a residue and m: n is a ratio of 100: 0-0: 100 by molar ratio.
화학식 1로 표시되는 화합물에 있어서 산무수물과 산 2무수물의 몰비인 m:n의 비율은 100/0~0/100의 범위일 수 있다. 바람직하기로는 m:n의 비율이 100/0~50/50, 또는 0/100~50/50의 범위인 것이다. In the compound represented by Formula 1, the ratio of m: n, which is a molar ratio of acid anhydride and acid dianhydride, may be in a range of 100/0 to 0/100. Preferably, the ratio of m: n is in the range of 100/0 to 50/50, or 0/100 to 50/50.
화학식 1로 표시되는 화합물에 있어서, R1은 말레인산 무수물(Maleic anhydride), 숙신산 무수물(Succinic anhydride), 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-테트라하이드로프탈산 무수물(3,4,5,6-Tetrahydrophthalic Anhydride), 프탈산 무수물(Phthalic Anhydride), 이타콘산 무수물(Itaconic anhydride), 1,2,4-벤젠트리카복실산 무수물(1,2,4-Benzenetricarboxylic Anhydride), 메틸-테트라하이드로프탈산 무수물(Methyl-Tetrahydrophthalic Anhydride), 시트라콘산 무수물(Citraconic Anhydride), 2,3-디메틸말레인산 무수물(2,3-Dimethylmaleic Anhydride), 1-사이클 로펜텐-1,2,-디카복실산 무수물(1-Cyclopentene-1,2-Dicarboxylic anhydride), 시스(5-노보넨-엔도-2,3-디카복실산 무수물(cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) 및 1,8-나프탄산 무수물(1,8-Naphthalic Anhydride) 중에서 선택된 산무수물의 잔기일 수 있다. In the compound represented by the formula (1), R 1 is maleic anhydride, Succinic anhydride, cis-1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6 Tetrahydrophthalic Anhydride, 3,4,5,6-tetrahydrophthalic anhydride (3,4,5,6-Tetrahydrophthalic Anhydride), Phthalic Anhydride, Itaconic anhydride, 1,2,4 -Benzenetricarboxylic anhydride (1,2,4-Benzenetricarboxylic Anhydride), methyl-tetrahydrophthalic anhydride, citraconic anhydride, 2,3-dimethylmaleic anhydride (2,3- Dimethylmaleic Anhydride), 1-Cyclopentene-1,2, -dicarboxylic anhydride (1-Cyclopentene-1,2-Dicarboxylic anhydride), cis (5-norbornene-endo-2,3-dicarboxylic anhydride (cis- Residues of acid anhydrides selected from 5-Norbonene-endo-2,3-Dicarboxylic Anhydride) and 1,8-Naphthalic Anhydride Can.
그리고 R2는 1,2,4,5-벤젠테트라카복실산 이무수물(1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-바이프탈산 이무수물(4,4'-Biphthalic Dianhydride), 3,3',4,4'-벤조페논테트라카복실산 이무수물(3,3',4,4'-Benzophenonetetracarboxylic Dianhydride), 피로멜리트산 이무수물(Pyromelitic Dianhydride), 1,4,5,8-나프탈렌테트라카복실산 이무수물(1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-테트라카복실산 무수물(1,2,4,5-Tetracarboxylic Anhydide), 메틸노보넨-2,3-디카복실산 무수물(Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4'-[2,2,2-트리플로로-1-(트리플로로메틸)에틸리덴]디프탈산 무수물(4,4'-[2,2,2-Trifluoro-1-(Trifluoromethyl)Ethylidene]Diphthalic Anhydride), 4,4'-옥시디프탈산 무수물(4,4`-Oxydiphthalic Anhydride) 및 에틸렌글리콜 비스(안하이드로 트리멜리테이트)(Ethylene Glycol Bis (Anhydro Trimelitate)) 중에서 선택된 산2무수물의 잔기일 수 있다. And R 2 is 1,2,4,5-benzenetetracarboxylic dianhydride (1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-biphthalic dianhydride (4,4'-Biphthalic Dianhydride), 3 , 3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-Benzophenonetetracarboxylic Dianhydride), pyromellitic dianhydride, 1,4,5,8-naphthalenetetra Carboxylic dianhydrides (1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-tetracarboxylic anhydride (1,2,4,5-Tetracarboxylic Anhydide), methylnorbornene-2,3-dicarboxylic acid Anhydrous (Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4 '-[2,2,2-trifluoro-1- (trifluoromethyl) ethylidene] diphthalic anhydride (4,4'-[2 , 2,2-Trifluoro-1- (Trifluoromethyl) Ethylidene] Diphthalic Anhydride, 4,4'-Oxydiphthalic Anhydride (4,4'-Oxydiphthalic Anhydride) and Ethylene Glycol Residue of acid 2 anhydride selected from Bis (Anhydro Trimelitate) There.
이와 같은 화학식 1로 표시되는 화합물은 전체 수지 조성 중 5~80중량%로 포함되는 것이 형성된 패턴의 고감도 내열성, 감도, 코팅성 개선에 있어서 바람직하 다. Such a compound represented by the formula (1) is preferable in improving the high sensitivity heat resistance, sensitivity, coating properties of the pattern is formed that is contained in 5 to 80% by weight of the total resin composition.
(2) 다관능성 모노머(2) polyfunctional monomers
광에 의해 포토레지스트상을 형성하는 역할을 하는 다관능성 모노머는 구체적으로는, 프로필렌글리콜 메타크릴레이트, 디펜타에리쓰리톨 헥사아크릴레이트, 디펜타에리쓰리톨 아크릴레이트, 네오펜틸글리콜 디아크릴레이트, 1,6-헥산디올 디아크릴레이트, 1,6-헥산디올 아크릴레이트 테트라에틸렌글리콜 메타크릴레이트, 비스페녹시 에틸알콜 디아크릴레이트, 트리스히드록시에틸이소시아누레이트 트리메타크릴레이트, 트리메틸프로판 트리메타크릴레이트, 펜타에리 쓰리톨 트리메타 크릴레이트, 펜타에리쓰리톨 테트라메타크릴레이트 및 디펜타에리쓰리톨 헥사메타 크릴레이트로 이루어진 그룹 중에서 선택되는 1종 또는 2종 이상의 혼합물일 수 있다. Specific examples of the polyfunctional monomers that form the photoresist image by light include propylene glycol methacrylate, dipentaerythritol hexaacrylate, dipentaerythritol acrylate, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol acrylate tetraethylene glycol methacrylate, bisphenoxy ethyl alcohol diacrylate, trishydroxyethyl isocyanurate trimethacrylate, trimethylpropane It may be one or a mixture of two or more selected from the group consisting of trimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate and dipentaerythritol hexamethacrylate.
그 함량은 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.1~99중량부인 것이 UV에 의한 광개시제의 라디칼 반응으로 인한 가교결합으로 패턴형성 및 안료 및 입자 성분과의 결합력이 높아져서 광학밀도가 증가하는 점에 있어서 바람직하다. The content is 0.1 to 99 parts by weight based on 100 parts by weight of the compound represented by the formula (1) is cross-linked due to the radical reaction of the photoinitiator by UV due to the pattern formation and the binding strength of the pigment and particle components is increased to increase the optical density It is preferable at the point.
(3) 실리콘계 화합물(3) silicone compound
실리콘계 화합물은 수지 블랙 매트릭스에 있어서 물, 알칼리, 산, 유기용매 등의 화학물질에 대한 내화학성과 내열성, 접착성 등을 개선하기 위해 포함되는 것으로, 구체적으로는 페놀 노볼락형 에폭시 아크릴레이트, 비스페놀A형 아크릴레이 트, 비스페놀 S형 아크릴레이트, 크레졸 노볼락형 에폭시 아크릴레이트 등의 에폭시기를 가지는 1종이상의 화합물일 수 있다. The silicone compound is included in the resin black matrix to improve chemical resistance, heat resistance, and adhesion to chemical substances such as water, alkali, acid, and organic solvent, and specifically, phenol novolac type epoxy acrylate and bisphenol. It may be at least one compound having an epoxy group, such as type A acrylate, bisphenol S type acrylate, cresol novolac type epoxy acrylate.
그 함량은 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.1~80중량부인 것이 패턴형성 후 내열성, 내화학성, 접착성 개선에 있어서 바람직하다. The content is preferably 0.1 to 80 parts by weight based on 100 parts by weight of the compound represented by Formula 1 in improving heat resistance, chemical resistance, and adhesion after pattern formation.
(4) 광중합개시제 또는 광증감제(4) photopolymerization initiator or photosensitizer
광중합개시제 혹은 광증감제는 옥심에스테르계의 화합물인 1-[9-에틸-6-(2-메틸벤조일)-9H-카바졸-3-일]-1-(O-아세틸옥심)(1-[9-ethyl-6-(2-methybenzoyl)-9H-carbazol-3-yl]-1-(O-acetyloxime)), 1,2-옥탄디온-1[(4-페닐티오)페닐]-2-벤조일-옥심( 1,2-octanedione-1[(4-phenylthio)phenyl]-2-benzoyl-oxime)과 티옥산톤, 2,4-디에틸 티옥산톤, 티옥산톤-4-술폰산, 벤조페논, 4,4'-비스(디에틸아미노)벤조페논, 아세토페논, p-디메틸아미노아세토페논, 디메톡시아세톡시벤조페논, 2,2'-디메톡시-2-페틸아세토페논, p-메톡시아세토페논, 2-메틸[4-(메틸티오)페닐]-2-모르폴리노-1-프로파논, 2-벤질-2-디에틸아미노-1-(4-모르폴리노페닐)-부탄-1-온, 2-히드록시-2-메틸-1-페닐프로판-1-온, 4-(2-히드록시에톡시)페닐-(2-히드록시-2-프로필)케톤, 1-히드록시시클로헥실페닐케톤 등의 케톤류; 안트라퀴논, 1,4-나프토퀴논 등의 퀴논류; 1,3,5-트리스(트리클로로메틸)-s-트리아진, 1,3-비스(트리클로로메틸)-5-(2-클로로페닐)-s-트리아진, 1,3-비스(트리클로로페닐)-s-트리아진, 페나실 클로라이드, 트리브로모메틸 페닐술폰, 트리스(트리클로로메틸)-s-트리아진 등의 할로겐 화합물; 디-t-부틸 퍼옥사이드 등의 과산화물; 2,4,6-트리메틸 벤조일 디페 닐 포스핀 옥사이드 등의 아실 포스핀 옥사이드류 중에서 선택된 것일 수 있다. The photoinitiator or the photosensitizer is 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) which is an oxime ester compound. [9-ethyl-6- (2-methybenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime)), 1,2-octanedione-1 [(4-phenylthio) phenyl] -2 -Benzoyl-oxime (1,2-octanedione-1 [(4-phenylthio) phenyl] -2-benzoyl-oxime) with thioxanthone, 2,4-diethyl thioxanthone, thioxanthone-4-sulfonic acid, Benzophenone, 4,4'-bis (diethylamino) benzophenone, acetophenone, p-dimethylaminoacetophenone, dimethoxyacetoxybenzophenone, 2,2'-dimethoxy-2-petylacetophenone, p- Methoxyacetophenone, 2-methyl [4- (methylthio) phenyl] -2-morpholino-1-propane, 2-benzyl-2-diethylamino-1- (4-morpholinophenyl)- Butan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1- Ketones such as hydroxycyclohexylphenyl ketone; Quinones such as anthraquinone and 1,4-naphthoquinone; 1,3,5-tris (trichloromethyl) -s-triazine, 1,3-bis (trichloromethyl) -5- (2-chlorophenyl) -s-triazine, 1,3-bis (trichloro Halogen compounds such as rophenyl) -s-triazine, phenacyl chloride, tribromomethyl phenylsulfone and tris (trichloromethyl) -s-triazine; Peroxides such as di-t-butyl peroxide; It may be selected from acyl phosphine oxides such as 2,4,6-trimethyl benzoyl diphenyl phosphine oxide.
이와 같은 광중합개시제 또는 광증감제는 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.01~20중량부로 포함되는 것이 바람직하다. Such a photopolymerization initiator or a photosensitizer is preferably included in 0.01 to 20 parts by weight based on 100 parts by weight of the compound represented by the formula (1).
(5) 블랙안료(5) Black Pigment
블랙안료로는 카본블랙, 티탄블랙, 아닐린블랙, 퍼릴렌 블랙, 티탄산 스트론튬, 산화 크롬, 세리아 등의 각종 무기산화물 안료를 사용할 수 있다. 바람직하게 카본블랙을 사용하며, 예를 들어 일본 Mikuni Color사의 CF Black EX-3276, CF Black EX-3277 시리즈, 일본 미쯔비시사의 다이어그램 블록 Ⅱ, 다이어그램 블록 N339, 다이어그램 블록 SH, 다이어그램 블록 H, 다이어그램 블록 LH, 다이어그램 블록 HA, 다이어그램 블록 SF 등을 사용할 수 있다. 또한 미국 Cabot 사에 의해 시판되는 Regal 250T, Regal 99R, Elftex 12, 미국 콜롬비아 케미컬스사의 Raven 880 Ultra, Raven 860 Ultra, Raven 850 Ultra, Raven 790 Ultra, Raven 760 Ultra, Raven 520 Ultra, Raven 500 Ultra 등을 사용할 수 있다. As the black pigment, various inorganic oxide pigments such as carbon black, titanium black, aniline black, perylene black, strontium titanate, chromium oxide, and ceria can be used. Carbon black is preferably used, for example, CF Black EX-3276, CF Black EX-3277 series from Mikuni Color Japan, Diagram Block II, Diagram Block N339, Diagram Block SH, Diagram Block H, Diagram Block LH from Mitsubishi Japan. , Diagram block HA, diagram block SF, and the like can be used. Regal 250T, Regal 99R, Elftex 12, Raven 880 Ultra, Raven 860 Ultra, Raven 850 Ultra, Raven 790 Ultra, Raven 760 Ultra, Raven 520 Ultra, Raven 500 Ultra, etc. Can be used.
상기 블랙안료의 입자크기는 50 내지 150㎚로 조절하는 것이 좋으며, 보다 바람직하게는 80 내지 100㎚로 조절하는 것이 좋은데, 스핀타입 및 스핀리스(spinless) 타입 코팅시 유동성을 부여하고, 프리베이크 후의 표면잔사 및 돌기방지에 효과적이며, 광학밀도 및 기판 접착력에 효과적이기 때문이다. It is preferable to adjust the particle size of the black pigment to 50 to 150nm, more preferably to 80 to 100nm, which gives fluidity during spin type and spinless type coating, and after prebaking This is because it is effective for preventing surface residues and protrusions, and effective for optical density and substrate adhesion.
상기 블랙안료는 총조성물에 1~90중량%에 해당하는 양을 사용한다.The black pigment is used in an amount corresponding to 1 to 90% by weight of the total composition.
(6) 용매(6) solvent
용매는 프로필렌글리콜메틸에테르아세테이트(PGMEA), 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜메틸에테르, 프로필렌글리콜프로필에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 디에틸글리콜메틸아세테이트, 에틸에톡시프로피오네이트, 메틸에톡시프로피오네이트, 뷰틸아세테이트, 에틸아세테이트, 시클로헥사논, 아세톤, 메틸이소부틸케톤, 디메틸포름아미드, N,N`-디메틸아세트아미드, N-메틸피롤리디논, 디프로필렌글리콜메틸에테르, 톨루엔, 메틸셀로솔브 및 에틸셀로솔브 중에서 선택하여 사용할 수 있다. The solvent is propylene glycol methyl ether acetate (PGMEA), propylene glycol ethyl ether acetate, propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethyl glycol methyl acetate, ethyl ethoxy propio Nate, methylethoxy propionate, butyl acetate, ethyl acetate, cyclohexanone, acetone, methyl isobutyl ketone, dimethylformamide, N, N`-dimethylacetamide, N-methylpyrrolidinone, dipropylene glycol methyl It can be selected from ether, toluene, methyl cellosolve and ethyl cellosolve.
(7) 첨가제(7) additive
본 발명에 따른 수지 블랙 매트릭스용 감광성 수지 조성물은 필요에 따라 첨가제를 더 포함할 수 있는데, 첨가제의 일예로는 블랙 매트릭스와 코팅기판과의 밀착력을 향상시켜주는 실란계 커플링제, 코팅된 표면의 접촉각의 개선, 잔사개선등의 특성을 향상시키기 위한 계면활성제 등을 들 수 있다. The photosensitive resin composition for the resin black matrix according to the present invention may further include an additive as necessary. Examples of the additive include a silane coupling agent that improves adhesion between the black matrix and the coating substrate, and the contact angle of the coated surface. Surfactant for improving the characteristics, such as the improvement and residue improvement, etc. are mentioned.
이와 같은 조성을 갖는 감광성 수지 조성물을 분산 제조하여 얻어지는 수지 블랙 매트릭스는 점도가 1 내지 5cps인 것이 효과적이다. 이는 스핀타입 또는 스핀리스(spinless) 타입의 코팅에 대하여 다양한 제품 그레이드를 제공하고, 코팅 후의 박막 내의 잔사 및 돌기를 방지할 뿐 아니라 박막의 두께를 다양하게 조절하는 데 보다 유리하기 때문이다. It is effective that the resin black matrix obtained by carrying out dispersion preparation of the photosensitive resin composition which has such a composition is 1-5 cps. This is because it provides various product grades for spin type or spinless type coatings, prevents residues and projections in the thin film after coating, and is more advantageous for controlling the thickness of the thin film in various ways.
또한, 이와 같은 감광성 수지 조성물을 분산제조하여 얻어지는 수지 블랙매트릭스를 코팅한 후 노광 및 현상을 거쳐 얻어진 패턴은 광학밀도가 단위 두께(㎛)당 4.5~6.0을 만족한다. In addition, the pattern obtained by coating the resin black matrix obtained by dispersing and manufacturing such a photosensitive resin composition after exposure and development satisfies the optical density of 4.5 to 6.0 per unit thickness (µm).
이하, 본 발명을 실시 예를 통하여 보다 상세히 설명하나, 본 발명의 범위가 하기 실시예로 한정되는 것은 아니다. Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples.
<합성예 1> Synthesis Example 1
1L 사구 플라스크에, 용매인 프로필렌글리콜메틸에테르아세테이트(PGMEA)에 비스페놀 플루오렌형 에폭시화합물(화학식 2 화합물) 232g과 다이알릴아민(화학식 3 화합물) 97g을 혼합하고, 테트라에칠암모니움브로마이드 4.93g과 톨루하이드로퀴논 100mg넣은 후, 온도 90~100℃로 승온하고 90~100℃로 유지하면서 반응시킨다. 이때 질소는 10mL/min으로 조절하였다. 반응시간 1시간 단위로 산가를 측정하여 산가가 2.0mgKOH/g 미만이 될 때까지 반응을 계속 하여, 다이알릴아미노기를 포함하는 비스페놀 플루오렌형 화합물(화학식 7 화합물)를 수득하였다.Into a 1 L four-necked flask, 232 g of a bisphenol fluorene type epoxy compound (Compound 2) and 97 g of diallylamine (Compound 3) were mixed with propylene glycol methyl ether acetate (PGMEA) as a solvent, and tetraethylammonium bromide 4.93 g. After putting 100 mg and toluhydroquinone, the temperature is raised to 90 ~ 100 ℃ and reacted while maintaining at 90 ~ 100 ℃. At this time, nitrogen was adjusted to 10mL / min. The acid value was measured in units of reaction time for 1 hour, and the reaction was continued until the acid value was less than 2.0 mgKOH / g, thereby obtaining a bisphenol fluorene compound containing a diallylamino group (Compound 7).
다음으로, 위에서 반응시켜 얻은 화합물 (화학식 7 화합물) 0.05mol에 산무수물로서 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride) 을 0.05mol 첨가하여 온도 110℃까지 서서히 승온 한다. 승온 후 110℃로 유지하면서 2시간 반응시켜 최종 화합물인 화학식 8로 표시되는 다이알릴아미노기를 포함하는 수지화합물을 수득하였다.Next, 0.05 mol of cis-1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6-tetrahydrophthalic Anhydride) as an acid anhydride in 0.05 mol of the compound (Formula 7 compound) obtained by the above reaction. It adds and gradually raises temperature to 110 degreeC. The mixture was reacted for 2 hours while maintaining the temperature at 110 ° C., thereby obtaining a resin compound including a diallylamino group represented by Formula 8 as a final compound.
<합성예 2>Synthesis Example 2
상기 합성예 1과 동일한 방법으로 화학식 7로 표시되는 화합물을 제조한 후, 산무수물로서 시스-1,2,3,6-테트라하이드로프탈산 무수물, 산 2무수물로서 바이페닐 테트라카복실산 이무수물을 90:10몰비로 사용하여 다음 화학식 9로 표시되는 화합물을 얻었다.After the compound represented by the formula (7) was prepared in the same manner as in Synthesis Example 1, biphenyl tetracarboxylic dianhydride was used as cis-1,2,3,6-tetrahydrophthalic anhydride and acid dianhydride as acid anhydride. It was used in a 10 molar ratio to obtain a compound represented by the following formula (9).
상기 식에서, m:n은 90/10 몰비율이다.Wherein m: n is 90/10 molar ratio.
<합성예 3> Synthesis Example 3
상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 10:90몰비로 사용하여 상기 화학식 9에 있어서 m:n이 10/90인 화합물을 얻었다.Prepared in the same manner as in Synthesis Example 2 except using an acid anhydride and an acid anhydride in a 10:90 molar ratio to obtain a compound having m: n in Formula 9 of 10/90.
<합성예 4> Synthesis Example 4
상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 70:30몰비로 사용하여 상기 화학식 9에 있어서 m:n이 70/30인 화합물을 얻었다.The compound was prepared in the same manner as in Synthesis example 2, except that an acid anhydride and an acid anhydride were used in a 70:30 molar ratio to obtain a compound having m: n of 70/30 in Chemical Formula 9.
<합성예 5> Synthesis Example 5
상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 50:50몰비로 사용하여 상기 화학식 9에 있어서 m:n이 50/50인 화합물을 얻었다.Prepared in the same manner as in Synthesis Example 2 except using an acid anhydride and an acid anhydride in a 50:50 molar ratio to obtain a compound having m: n in Formula 9 of 50/50.
<합성예 6> Synthesis Example 6
상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물을 사용하지 않고 산2무수물만을 사용하여 상기 화학식 9에 있어서 m:n이 0/100인 화합물을 얻었다.Prepared in the same manner as in Synthesis Example 2, except using an acid anhydride without using an acid anhydride to obtain a compound in which m: n is 0/100 in the formula (9).
<비교합성예 1>Comparative Example 1
500㎖의 4구 플라스크에, 비스페놀플루오렌형 에폭시수지 231g(에폭시 당량 231)과, 트리에틸벤질암모늄클로라이드 450mg, 2,6-디이소부틸페놀 100mg, 및 아크릴산 72.0g을 넣어 혼합하고, 공기를 매분 25㎖의 속도로 불어넣으면서 90~100℃로 가열하여 용해시켰다. 이 용액은 가열됨에 따라 점차 흐린 백색이었으나, 그대로 서서히 온도를 올려 120℃까지 가열하여 완전히 용해시켰다. 이때, 용액은 점차 투명하고 끈적끈적해졌고, 이를 계속해서 교반하였다. 간격을 두고 산가(acid value)를 측정하여 산가가 2.0mgKOH/g 미만이 될때까지 계속 가열하며 교반하였다. 산가가 목표(산가 0.8)에 이르기까지 8시간이 소요되었다.Into a 500 ml four-necked flask, 231 g (epoxy equivalent 231) of bisphenol fluorene type epoxy resin, 450 mg of triethylbenzyl ammonium chloride, 100 mg of 2,6-diisobutylphenol, and 72.0 g of acrylic acid were mixed, and air was mixed. The solution was heated to 90 to 100 ° C. while dissolving at a rate of 25 ml per minute. The solution gradually became pale white as it was heated, but the temperature was gradually raised to 120 ° C. and completely dissolved. At this time, the solution gradually became clear and sticky, and continued stirring. The acid value was measured at intervals and the stirring was continued until the acid value was less than 2.0 mgKOH / g. It took eight hours for the acid value to reach its target (acid value 0.8).
그후, 혼합물을 실온까지 냉각시켜, 무색투명한 고체의 비스페놀플루오렌형 에폭시아클릴레이트를 얻었다.Thereafter, the mixture was cooled to room temperature to obtain a colorless transparent solid bisphenol fluorene type epoxy acrylate.
이렇게 하여 얻게된 비스페놀플루오렌형 에폭시아크릴레이트 303g을 셀로솔 브아세테이트 2kg 중에 용해시켜 용액으로 한 후, 여기에 1,2,3,6-테트라히드로프탈산 무수물과, 비페닐테트라카르복실산 2무수물 및 테트라에틸암모늄브로마이드 1g을 첨가하여, 서서히 가열시켜 110~115℃로 2시간 반응시켜, 화학식 10의 중합성 불포화 화합물을 얻었다. 이때, 1,2,3,6-테트라히드로프탈산 무수물과 비페닐테트라카르복실산 2무수물의 몰비는 100/0으로 하였다. 303 g of the bisphenol fluorene type epoxy acrylate thus obtained was dissolved in 2 kg of cellosol brothacetate to make a solution, followed by 1,2,3,6-tetrahydrophthalic anhydride and biphenyltetracarboxylic dianhydride. And tetraethylammonium bromide 1g was added, it heated gradually, it was made to react at 110-115 degreeC for 2 hours, and the polymerizable unsaturated compound of General formula (10) was obtained. At this time, the molar ratio of 1,2,3,6-tetrahydrophthalic anhydride and biphenyl tetracarboxylic dianhydride was 100/0.
상기 식(3)에 있어서, m:n의 비율은 100/0인 화합물In the formula (3), the ratio of m: n is 100/0 compound
<비교합성예 2>Comparative Example 2
비교합성예 1의 상기 화학식 10에 있어서, m:n의 비율이 90/10인 화합물을 제조하였다.In Chemical Formula 10 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 90/10 was prepared.
<비교합성예 3>Comparative Example 3
비교합성예 1의 상기 화학식 10에 있어서, m:n의 비율이 10/90인 화합물을 제조하였다.In Chemical Formula 10 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 10/90 was prepared.
<비교합성예 4>Comparative Example 4
비교합성예 1의 상기 화학식 10에 있어서, m:n의 비율이 70/30인 화합물을 제조하였다.In Chemical Formula 10 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 70/30 was prepared.
<비교합성예 5>Comparative Example 5
비교합성예 1의 상기 화학식 10에 있어서, m:n의 비율이 50/50인 화합물을 제조하였다.In Chemical Formula 10 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 50/50 was prepared.
<비교합성예 6>Comparative Example 6
비교예 1의 상기 화학식 10에 있어서, m:n의 비율이 0/100인 화합물을 제조하였다.In Chemical Formula 10 of Comparative Example 1, a compound having a ratio of m: n of 0/100 was prepared.
<실시예 1~6 및 비교예 1~6><Examples 1-6 and Comparative Examples 1-6>
상기 합성예 1~6 및 비교합성예 1~6에 따라 얻은 각각의 수지를 포함하여, 다음 표 1과 같은 조성으로 감광성 수지 조성물을 제조하였다. Including each of the resins obtained according to Synthesis Examples 1 to 6 and Comparative Synthesis Examples 1 to 6, a photosensitive resin composition was prepared in the composition shown in Table 1 below.
상기 실시예 및 비교예에 의하여 제조된 감광성 수지 조성물에 대하여 감도, 내열성, 코팅균일성, 현상패턴 안정성, 광학밀도, 접착강도 등을 다음과 같은 방법으로 측정하였으며, 그 결과는 다음 표 2와 같다. The sensitivity, heat resistance, coating uniformity, development pattern stability, optical density, and adhesive strength of the photosensitive resin compositions prepared according to the above Examples and Comparative Examples were measured by the following methods, and the results are shown in Table 2 below. .
(1) 감도(1) sensitivity
감도는 수지 블랙 매트릭스을 코팅한 유리판에 노광량을 달리 하여 노광 패턴을 형성 후 현상-포스트베이크 공정을 거친 후 패턴이 형성되는 정도를 판별하여 적정 노광량을 결정하였다.(노광량 20mJ/㎠, 30mJ/㎠, 50mJ/㎠, 70mJ/㎠,100mJ/㎠)Sensitivity was determined to determine the appropriate exposure amount by determining the degree of pattern formation after forming an exposure pattern by varying the exposure amount on the glass plate coated with the resin black matrix, followed by a development-post bake process. 50mJ / ㎠, 70mJ / ㎠, 100mJ / ㎠)
(2) 내열성 (2) heat resistance
내열성은 수지 블랙 매트릭스를 유리기판에 코팅-프리베이크-노광-현상공정(노광량100mJ/㎠)을 수행한 후 포스트베이크 공정 전후의 패턴의 모양을 비교하여 평가하였다. 포스트베이크는 컨벡션 오븐에서 250℃로 40분 동안 수행하였다. 패턴의 모양과 두께의 변화는 광학현미경과 α-Step으로 확인하였다. The heat resistance was evaluated by performing a coating-prebaking-exposure-development process (exposure amount 100mJ / cm 2) on the glass substrate of the resin black matrix and comparing the shapes of the patterns before and after the postbaking process. Postbaking was performed for 40 minutes at 250 ° C. in a convection oven. Changes in the shape and thickness of the pattern were confirmed by optical microscopy and α-Step.
(3) 코팅균일도 (3) Coating uniformity
코팅균일도는 수지 블랙 매트릭스를 유리기판에 코팅-프리베이크-노광-현상-포스트베이크 한 후 기판의 임의의 10군데를 선정하여 두께를 측정하여 아래의 식으로 계산하여 평가하였다.The coating uniformity was evaluated by coating the resin black matrix on a glass substrate by coating-prebaking-exposure-developing-postbaking, and then selecting any ten places of the substrate and measuring the thickness thereof.
(Tmax-Tmin)/(Tmax+Tmin) X 100 (T max -T min ) / (T max + T min ) X 100
여기서, Tmax 는 최대 두께, Tmin는 최소 두께이다. Where T max is the maximum thickness and T min is the minimum thickness.
(4) 패턴 안정성(4) pattern stability
패턴 안정성은 패턴이 형성된 유리판을 수직으로 절단 후 단면을 SEM으로 관찰하여 막이 감소된 정도를 확인하여 평가하였다. The pattern stability was evaluated by vertically cutting the glass plate on which the pattern was formed and observing the cross section by SEM to confirm the degree of decrease of the film.
(5) 광학밀도(5) optical density
광학밀도는 수지 블랙 매트릭스를 약 1.0㎛로 코팅한 후 노광-현상공정으로 패턴을 형성한 다음 시마즈 전자의 PMT장비를 이용하여 측정하였다.Optical density was measured by coating a resin black matrix at about 1.0 μm, forming a pattern by an exposure-developing process, and then using Shimadzu Electronics PMT equipment.
(6) 접착강도(6) adhesive strength
접착강도는 수지 블랙 매트릭스를 유리판에 코팅 후 ASTM D3359 (Cross Cutting Tape Test) 실험방법으로 그 결과를 측정하였다.Adhesive strength was measured by the ASTM D3359 (Cross Cutting Tape Test) test method after coating the resin black matrix on the glass plate.
상기 표 2의 결과로부터, 실시예 1 내지 6의 경우는 비교예 1 내지 6에 비하여 특히 감도가 2배 이상 우수하였고, 내열성, 패턴안정성, 광학밀도, 접착강도 등에 있어서도 우수한 결과를 나타냄을 알 수 있다.From the results of Table 2, in the case of Examples 1 to 6 it was found that the sensitivity is particularly more than two times better than Comparative Examples 1 to 6, and also excellent results in heat resistance, pattern stability, optical density, adhesive strength, etc. have.
이는 비교예 1 내지 6에서 사용된 바인더 수지에 비하여 에틸렌기의 수가 증가된 수지를 사용한 결과라 판단된다. This is considered to be the result of using the resin in which the number of ethylene groups increased compared with the binder resin used in Comparative Examples 1-6.
Claims (16)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070139230A KR101305886B1 (en) | 2007-12-27 | 2007-12-27 | Composition for Resin Black Matrix |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020070139230A KR101305886B1 (en) | 2007-12-27 | 2007-12-27 | Composition for Resin Black Matrix |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR20090071038A true KR20090071038A (en) | 2009-07-01 |
| KR101305886B1 KR101305886B1 (en) | 2013-09-06 |
Family
ID=41322498
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020070139230A KR101305886B1 (en) | 2007-12-27 | 2007-12-27 | Composition for Resin Black Matrix |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR101305886B1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101282516B1 (en) * | 2009-11-18 | 2013-07-04 | 코오롱인더스트리 주식회사 | Photopolymerizable resin composition |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000009915A (en) | 1998-06-18 | 2000-01-14 | Toray Ind Inc | Thermosetting resin solution composition for color filter, color filter and liquid crystal display device |
| JP2003165830A (en) * | 2001-11-29 | 2003-06-10 | Nagase Chemtex Corp | Photopolymerizable unsaturated resin, method for producing the same and alkali-soluble radiation- sensitive resin composition using the same |
| KR100740550B1 (en) | 2006-02-10 | 2007-07-18 | 주식회사 코오롱 | Composition for resin black matrix |
-
2007
- 2007-12-27 KR KR1020070139230A patent/KR101305886B1/en active IP Right Grant
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101282516B1 (en) * | 2009-11-18 | 2013-07-04 | 코오롱인더스트리 주식회사 | Photopolymerizable resin composition |
Also Published As
| Publication number | Publication date |
|---|---|
| KR101305886B1 (en) | 2013-09-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20120033893A (en) | Photopolymerizable resin composition | |
| CN109634056B (en) | Photosensitive resin composition and method for producing substrate with resin film | |
| CN110888301B (en) | Photosensitive resin composition for light-shielding film, light-shielding film formed by hardening same, and color filter | |
| JP6713746B2 (en) | Photosensitive resin composition for light-shielding film having spacer function, light-shielding film, liquid crystal display device, method for producing photosensitive resin composition for light-shielding film having spacer function, method for producing light-shielding film, and production of liquid crystal display device Method | |
| KR101488529B1 (en) | Radiation-sensitive composition for forming colored layer, color filter and color liquid crystal display device | |
| TW200835944A (en) | Black matrix high sensitive photoresist composition for liquid crystal display and black matrix prepared by using the same | |
| CN107272341B (en) | Photosensitive resin composition for light-shielding film, substrate for display, and method for producing same | |
| KR100740550B1 (en) | Composition for resin black matrix | |
| KR100994605B1 (en) | A colored photosensitive resin composition, color filter and liquid crystal display device having the same | |
| KR20120002372A (en) | Composition for resin black matrix | |
| KR101337023B1 (en) | Photopolymerizable resin composition | |
| JP2003231752A (en) | Photosensitive polyimide precursor, photosensitive resin composition, color filter, liquid crystal drive side- substrate, and liquid crystal panel | |
| WO2012091401A2 (en) | Photosensitive resin composition for resin black matrix | |
| JPH10274848A (en) | Radiation sensitive composition and radiation sensitive composition for color filter | |
| KR101305886B1 (en) | Composition for Resin Black Matrix | |
| KR20170071757A (en) | Photopolymerizable resin composition, black matrix and touch panel | |
| KR20190133398A (en) | Photosensitive resin composition, black pixel defining layer using the same and display device | |
| KR20130003357A (en) | Method for forming a black matrix and column spacer | |
| CN116529670A (en) | Photosensitive resin composition and method for producing photosensitive resin composition | |
| KR20170070592A (en) | Photopolymerizable resin composition, black matrix and touch panel | |
| KR101247839B1 (en) | Composition for Resin Black Matrix | |
| KR101282516B1 (en) | Photopolymerizable resin composition | |
| JPH10273525A (en) | Alkaline solution-soluble polymer | |
| KR20120033892A (en) | Photopolymerizable resin composition | |
| JP6157111B2 (en) | Colored photosensitive resin composition, color filter, and color liquid crystal display element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| N231 | Notification of change of applicant | ||
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20180903 Year of fee payment: 6 |