KR20090070596A - Fluid supply unit, method of supplying fluid and substrate treating apparatus having the same - Google Patents

Abstract

A fluid supplying unit, a fluid supplying method, and a substrate processing device having the same are provided to control an injecting amount of an injection nozzle by controlling a flow rate of an injection nozzle by controlling the size of a control hole. A fluid supplying unit includes a fluid distributing member, an injection nozzle(220), and a flux controller(251). The fluid distributing member provides a fluid path. The injection nozzle is combined in the fluid distribution member. The injection nozzle receives the fluid from the fluid distribution member and injects the fluid. The flux controller is positioned between the injection nozzle and the fluid distribution member. The flux controller controls the flow rate of the fluid inputted to the injection nozzle.

Description

FLUID SUPPLY UNIT, METHOD OF SUPPLYING FLUID AND SUBSTRATE TREATING APPARATUS HAVING THE SAME}

The present invention relates to a device for manufacturing a semiconductor device, and more particularly to a fluid supply unit for producing a semiconductor device using a chemical vapor deposition method, a fluid supply method and a substrate processing apparatus having the same.

Chemical Vapor Deposition (CVD) apparatus is one of the devices for manufacturing a semiconductor device, and forms a predetermined thin film on the substrate surface.

High Density Plasma Chemical Vapor Deposition apparatus (HDP CVD) is a kind of chemical vapor deposition apparatus that excites process gases by radio frequency (RF) to form thin films at low temperatures. Deposit on the substrate surface.

Specifically, the HDP CVD apparatus includes a chamber providing a space where chemical vapor deposition is performed, a gas ring for supplying a reaction gas, and a plurality of injection nozzles for injecting a reaction gas into a substrate provided in the chamber. The gas ring has a ring shape, is located above the substrate, and surrounds the substrate in plan view. The injection nozzle is coupled to the gas ring to receive the reaction gas into the gas ring. An injection hole into which the reaction gas from the gas ring flows is formed in the injection nozzle.

The thickness and thickness of the thin film depend on the uniformity of the reaction gas injected from the injection nozzle. In consideration of these characteristics, the injection position of the reaction gas is adjusted. That is, in the plan view, the distance between the injection nozzle and the substrate is adjusted to control the injection position of the reaction gas. This distance adjustment is made by adjusting the thickness of the Teflon seal interposed between the injection nozzle and the gas ring. That is, when the width of the Teflon sealing is thick, the distance between the jet nozzle and the substrate is narrowed, and when the width of the Teflon seal is thin, the distance between the jet nozzle and the substrate is far.

However, if the width of the Teflon sealing is too thick, the injection nozzle can be separated from the gas ring, so the adjustment of the injection position by the width of the Teflon sealing has its limitation.

An object of the present invention is to provide a fluid supply unit that is easy to adjust the flow rate of the fluid.

It is also an object of the present invention to provide a method for supplying a fluid using the fluid supply unit described above.

It is also an object of the present invention to provide a substrate processing apparatus having the fluid supply unit.

According to one aspect of the present invention, a fluid supply unit includes a fluid distribution member, at least one injection nozzle, and a flow control unit.

Specifically, the fluid distribution member provides a flow path for the fluid to move. The injection nozzle is coupled to the fluid distribution member, and receives the fluid from the fluid bonsai member and injects the fluid. The flow rate controller is positioned between the injection nozzle and the fluid distribution member, and adjusts the flow rate of the fluid provided to the injection nozzle.

Here, the injection nozzle is connected to the flow path of the fluid distribution member, the fluid flows into the injection hole, the flow rate control unit has a control hole for adjusting the flow rate of the injection nozzle, the discharged from the fluid supply line Fluid flows into the injection hole through the control hole.

The width of the adjustment hole is less than or equal to the width of the injection hole corresponding to the input end of the injection nozzle.

In addition, the fluid supply method according to one feature for realizing the above object of the present invention is as follows.

First, combine the flow rate control unit formed with a control hole in the input end of the injection nozzle. The injection nozzle is coupled to the output end of the fluid distribution member and provides fluid to the flow path of the fluid distribution member. The fluid is introduced into the injection nozzle through the adjusting hole while moving along the flow path of the fluid distribution member. The fluid is injected from the injection nozzle. Here, the flow rate of the fluid supplied to the injection nozzle is adjusted according to the size of the control hole.

In addition, the substrate processing apparatus according to one feature for realizing the above object of the present invention comprises a chamber, a support member, and a fluid supply unit.

The chamber provides a process space. The support member is provided in the process space and supports the substrate. The fluid supply unit is located on the outside of the support member in plan view and supplies a fluid for processing the substrate.

Specifically, the fluid supply unit includes a fluid distribution member, at least one injection nozzle and a flow rate control unit. The fluid distribution member is located outside of the support member in plan view and provides a flow path through which fluid for processing the substrate moves. The injection nozzle is located between the support member and the fluid distribution member in a plan view, is coupled to the fluid distribution member, and receives the fluid from the fluid distribution member to inject the fluid. The flow rate controller is positioned between the injection nozzle and the fluid distribution member, and adjusts the flow rate of the fluid provided to the injection nozzle.

According to the present invention described above, by adjusting the size of the adjustment hole of the flow control unit to adjust the flow rate of the fluid flowing into the injection nozzle. Thereby, since the injection amount of a jet nozzle is adjusted, the uniformity of substrate processing can be improved.

Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

1 illustrates a substrate processing apparatus according to an embodiment of the present invention.

Referring to FIG. 1, the substrate processing apparatus 700 of the present invention performs co-semiconductor crystal processing of a wafer. Hereinafter, the high density plasma chemical vapor deposition (HDPCVD) process will be described as an example.

The substrate processing apparatus 700 includes a reaction unit 100, a first gas supply unit 201, a coupling plate 300, a cover 400, a plasma generating unit 500, and a second gas supply unit 600. It includes.

The reaction unit 100 includes a chamber 110, a support member 120, and an exhaust line 130. Specifically, the chamber 110 provides a process space PS in which a substantial deposition process for processing a wafer is performed. In one example of the present invention, the chamber 110 has a circular columnar shape and an upper portion thereof is opened.

The support member 120 is installed in the process space PS. The support member 120 includes a support plate 121, a drive shaft 123, and a driver 125. The support plate 121 supports the wafer and fixes the wafer during the process. The drive shaft 123 is provided below the support plate 121. The drive shaft 123 is coupled to the support plate 121 and rotates the support plate 121 by driving the driver 125.

The exhaust line 130 is provided below the chamber 110 to exhaust the gas in the process space PS, and adjust the pressure of the process space PS. That is, the exhaust line 130 is connected to the exhaust hole 111 formed in the bottom surface of the chamber 110, and is connected to an external pump (not shown). In the process, gas and reaction by-products, etc., filled in the process space PS of the chamber 110 are discharged to the outside through the exhaust line 130 via the exhaust hole 111. In addition, the exhaust line 130 discharges the gas inside the chamber 110 to the outside to maintain the inside of the chamber 110 in a vacuum state. The exhaust line 130 may be provided with a control valve 131 for controlling the discharge of the gas and reaction by-products through the exhaust line 130.

On the other hand, one side of the chamber 110 is provided with a door 141 for opening and closing the passage 113 formed on the side wall of the chamber 110. That is, the wafer is introduced into the process space PS through the passage 113 and is drawn out of the process space PS. The door 141 is positioned adjacent to the passage 113 and opens and closes the passage 113 by driving the door driver 143.

An upper portion of the chamber 110 is provided with the first gas supply unit 201 that provides a reactive gas for the deposition process. A detailed description of the first gas supply unit 201 will be described in detail later with reference to FIGS. 2 to 4.

The coupling plate 300 is provided between the first gas supply unit 201 and the chamber 110. The coupling plate 300 is coupled to the upper end of the chamber 110 and the first gas supply unit 201. The coupling plate 300 seals the first and second flow paths 211 and 215 of the first gas supply unit 201 through which the reaction gas moves to form the coupling plate 300. Prevents the reaction gas from leaking out.

The cover 400 is provided on an upper portion of the first gas supply unit 201. The cover 400 faces the bottom surface of the chamber 110 and is coupled to the first gas supply unit 201 to seal the process space PS of the chamber 110.

An upper portion of the cover 400 is provided with the plasma generating member 500 for making the reaction gas supplied into the chamber 100 into a plasma state. The plasma generating member 500 includes a coil 510 provided on an upper surface of the cover 400 to form an electromagnetic field, and a fixture 520 for fixing the coil 510. A high frequency power source (not shown) is connected to the coil 510. In one example of the present invention, the cover 400 is made of an insulator material, for example, aluminum oxide or ceramic material, to which high frequency energy is transferred.

On the other hand, the second gas supply unit 600 is installed in the central portion of the cover 400 to supply the cleaning gas for cleaning the reaction gas and the chamber 110. Specifically, the second gas supply unit 600 includes first and second gas supply pipes 610 and 620 and a central nozzle 640. The first gas supply pipe 610 is connected to the center of the cover 400, and supplies the cleaning gas supplied through the first gas line 631 to the inside of the chamber 110.

The second gas supply pipe 620 is installed inside the first gas supply pipe 610, and provides a source gas supplied through the second gas line 633 to the central nozzle 640. The central nozzle 640 is coupled to an output end of the second gas supply pipe 620 and injects a source gas from the second gas supply pipe 620 into the process space PS. The center nozzle 640 is installed inside the cover 400 and faces the support plate 121 at an upper portion of the support plate 121.

The first and second gas lines 631 and 633 are provided with valves 631a and 633a for adjusting the amount of gas in the first and second gas lines 631 and 633, respectively.

In the deposition process, the reaction gas may be provided to the process space PS through both the first and second gas supply units 200 and 600, and the first and second gas supply units 201, 600).

Hereinafter, the first gas supply unit 200 will be described in detail with reference to the accompanying drawings.

FIG. 2 is a view showing the first gas supply unit shown in FIG. 1, FIG. 3 is an exploded perspective view showing the first nozzle and the flow rate adjusting member shown in FIG. 2, and FIG. 4 is the flow rate adjusting member shown in FIG. 3. 5A and 5B are perspective views illustrating another example of the flow regulating member illustrated in FIG. 4.

2 and 3, the first gas supply unit 201 includes a gas distribution ring 210 for providing a flow path of the reaction gas, a plurality of nozzle units NU for injecting the reaction gas, and a flow rate. The adjusting unit 251 is included.

Specifically, the gas distribution ring 210 is provided on an upper portion of the support plate 121, and has a ring shape spaced apart from the support plate 121 to surround the support plate 121 in plan view. In one example of the present invention, the gas distribution ring 210 has a circular ring shape.

The first and second flow paths 211 and 215 are formed in the gas distribution ring 210. The first flow path 211 has the same ring shape as the gas distribution ring 210 and is connected to the first gas supply line 241. The first gas supply line 241 provides a first reaction gas to the first flow path 211, and the first reaction gas moves along the first flow path 211. In one example of the present invention, a silicon-containing gas including silane (SiH ₄ ) may be used as the first reaction gas. The first gas supply line 241 is provided with a first gas valve 241a for adjusting the flow rate of the first reaction gas provided in the first flow path 211.

The second flow path 215 is spaced apart from the first flow path 211 and surrounds the first flow path 211. The second flow path 215 is connected to the second gas supply line 243, and the second gas supply line 243 provides a second reaction gas to the second flow path 215. In one example of the present invention, an oxygen-containing gas may be used as the second reaction gas. The second gas supply line 243 is provided with a second gas valve 243a for controlling the flow rate of the second reaction gas provided in the second flow path 215.

The nozzle units are provided inside the gas distribution ring 210. The nozzle unit NU is coupled to the gas distribution ring 210 to receive the first and second reaction gases. The nozzle units are spaced apart from each other and surround the support plate 121 in plan view. In a plan view, the nozzle units are arranged such that output ends for injecting the first and second reaction gases face the support plate 121.

In detail, the nozzle unit NU includes two first nozzles 220 and one second nozzle 230. The first nozzle 220 is connected to the first flow passage 211 through a first connection line 213 and receives the first reaction gas from the first flow passage 211 and sprays the first reaction gas.

The second nozzle 230 is disposed between the two first nozzles, and is connected to the second flow path 215 through a second connection line 217, and the second nozzle 230 is formed from the second flow path 215. 2 Inject the reaction gas.

In this embodiment, the first and second nozzles 220 and 230 have the same configuration, and the coupling relationship with the gas distribution ring 210 is also the same. Accordingly, the configuration of the first and second nozzles 220 and 230 and the coupling relationship with the gas distribution ring 210 will be described in detail with the first nozzle 220 as an example.

The first nozzle 220 has a rod shape extending in one direction, and an injection hole 221 into which a fluid such as the first reaction gas flows is formed therein. The injection hole 221 is connected to the first connection line 213 of the gas distribution ring 210, and the first reaction gas introduced into the first flow path 210 is connected to the first connection line 213. Provided through.

The first nozzle 220 is formed with a screw thread 223 for coupling with the gas distribution ring 210 on the outer circumferential surface of the input end coupled with the gas distribution ring 210. An upper portion of the screw thread 223 is provided with a coupling part 225 to which the flow control part 251 is coupled, and the coupling part 225 is inserted into the flow control part 251.

3 and 4, the flow rate adjusting unit 251 is formed in a ring shape and adjusts the flow rate of the first reaction gas flowing into the first nozzle 220. That is, the flow rate adjusting part 251 includes an upper surface 251a facing the side surface of the first nozzle 220 and a side surface 251b extending from the upper surface 251a and surrounding the coupling part 225. . The upper surface 251a is provided with a control hole 251c for adjusting the flow rate of the first reaction gas.

That is, since the first reaction gas flows into the injection hole 221 through the adjustment hole 251c, the first reaction gas flows into the injection hole 221 according to the diameter of the control hole 251c. The amount is different. For example, as the diameter of the control hole 251c is smaller, the flow rate of the first reaction gas flowing into the injection hole 221 of the first nozzle 220 is reduced. Here, the diameter of the adjustment hole (251c) is less than or equal to the diameter of the injection hole 221 corresponding to the input end of the first nozzle 220.

As such, the flow rate of the first reaction gas supplied to the first nozzle 220 varies according to the size of the control hole 251c. The first gas supply unit 201 adjusts the fluid flow rate of the first nozzle 220 by using flow rate adjusting parts in which control holes of different sizes are formed.

That is, as illustrated in FIGS. 4, 5A, and 5B, various sizes of the adjustment holes 251c, 253a, and 255a are formed for each of the flow rate adjusting units 251, 253, and 255, so as to have appropriate sizes. By coupling to the flow rate adjusting part flow rate adjusting unit having the control hole first nozzle 220, it is possible to adjust the flow rate of the first reaction gas of the first nozzle (220).

FIG. 6 is a cross-sectional view taken along the line II ′ of FIG. 2.

Referring to FIG. 6, the first nozzle 220 is inserted into the coupling portion of the gas distribution ring 210, and the thread 223 and the gas distribution ring 210 formed at an input end of the first nozzle 220. Screw thread formed in the coupling) to fix the first nozzle 220 to the gas distribution ring (210).

The fluid control unit 251 is coupled to the input terminal of the first nozzle 220 is inserted into the gas distribution ring 210.

The first connection line 213 of the gas distribution ring 210 is connected to the injection hole 221 through the control hole 251c of the fluid control unit 251, and is connected to the first connection line 213. The introduced first reaction gas is provided to the injection hole 221 through the control hole 251c.

In addition, the fluid control unit 251 is made of a resin material, and prevents the first reaction gas from leaking from the coupling portion of the gas distribution ring 210 and the first nozzle 220.

Hereinafter, a process of controlling the amount of reaction gas provided from the first gas supply unit 201 will be described in detail with reference to the accompanying drawings.

FIG. 7 is a process diagram illustrating a process of processing a wafer using the substrate processing apparatus illustrated in FIG. 1, and FIG. 8 is a process diagram illustrating a process of spraying a reaction gas from the first gas supply unit illustrated in FIG. 7.

7 and 8, first, the flow rate adjusting unit 251 is coupled to input terminals of the first and second nozzles 220 and 230 of the first gas supply unit 200, respectively. In this case, each of the first and second nozzles 220 and 230 is combined with a flow rate control unit having a control hole having a size suitable for a predetermined injection flow rate of the nozzle among the flow rate control units having different size control holes. The injection flow rates of the nozzles 220 and 230 are set in consideration of the thickness of the thin film to be formed on the wafer 10 and the flow of the reaction gas in the process space PS.

Accordingly, the injection flow rate of each of the first and second nozzles 220 and 230 of the first gas supply unit 200 is adjusted.

Subsequently, each of the first and second nozzles 220 and 230 is coupled to an output end of the gas distribution ring 210.

After the coupling of the nozzle units and the gas distribution ring 210 is completed, the door driver 143 is driven to open a passage 113 formed in the chamber 110, and the wafer 10 is opened. It enters into the process space PS through the passage 113 and is seated on the support plate 121.

Subsequently, the reaction gas RG is injected into the process space PS by using the first and second gas supply units 200 and 600. Specifically, the reaction gas RG flows into the first and second flow paths 211 and 215 of the gas distribution ring 210. The reaction gas RG introduced into the first flow passage 211 moves along the first flow passage 211 and is controlled by the flow control unit 251 of each flow control unit 251 coupled to the first nozzle 220. ) Is provided to each of the first nozzles 220, and the first nozzles inject the reaction gas RG. Similarly, the reaction gas RG introduced into the second flow path 215 moves along the second flow path 215, and the adjustment hole of each flow control part 251 coupled to each second nozzle 230 is performed. 251c is provided to each of the second nozzles 230, and the second nozzles spray the reaction gas RG.

On the other hand, the coil 520 receives a high frequency power to generate high frequency energy. The high frequency energy is transferred to the upper portion of the wafer 10 through the cover 400 to form an electromagnetic field on the wafer W, and the electromagnetic field reacts with the reaction gas RG to generate plasma.

The thin film is deposited on the wafer 10 by the plasma.

Although described with reference to the above embodiments, those skilled in the art will understand that various modifications and changes can be made without departing from the spirit and scope of the invention as set forth in the claims below. Could be.

1 illustrates a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a view showing the first gas supply unit shown in FIG. 1.

3 is an exploded perspective view illustrating the first nozzle and the flow rate control member illustrated in FIG. 2.

4 is a perspective view showing the flow rate control member shown in FIG.

5A and 5B are perspective views illustrating another example of the flow regulating member illustrated in FIG. 4.

FIG. 6 is a cross-sectional view taken along the line II ′ of FIG. 2.

FIG. 7 is a process diagram illustrating a process of processing a wafer using the substrate processing apparatus shown in FIG. 1.

FIG. 8 is a process diagram illustrating a process of spraying a reaction gas in the first gas supply unit illustrated in FIG. 7.

Explanation of symbols on the main parts of the drawings

100: reaction unit 201: first gas supply unit

300: bonding plate 400: cover

500: plasma generating unit 600: second gas supply unit

700: substrate processing apparatus

Claims (11)

A fluid distribution member for providing a flow path for moving the fluid; At least one injection nozzle coupled to the fluid distribution member and configured to inject the fluid from the fluid distribution member; And And a flow rate control unit disposed between the injection nozzle and the fluid distribution member and configured to adjust a flow rate of the fluid provided to the injection nozzle. The method of claim 1, The injection nozzle has an injection hole which is connected to the flow path of the fluid distribution member, the fluid is introduced, The flow rate control unit has a control hole for adjusting the flow rate of the injection nozzle, And the fluid discharged from the fluid supply line flows into the injection hole through the control hole. The method of claim 2, wherein the flow rate control unit, An upper surface of the injection nozzle facing the surface on which the injection hole is formed and the control hole formed; And And a side surface extending from the upper surface and surrounding the outer surface of the injection nozzle. The method of claim 3, The width of the control hole is a fluid supply unit, characterized in that less than or equal to the width of the injection hole corresponding to the input end of the injection nozzle. The fluid supply unit according to claim 3, wherein the flow rate control part is made of a resin material. The fluid supply unit of claim 5, wherein the flow rate controller is in close contact with the fluid distribution member. Coupling a flow rate control unit having an adjustment hole formed at an input end of the injection nozzle; Coupling the injection nozzle to an output end of a fluid distribution member; Providing a fluid to a flow path of the fluid distribution member; Flowing the fluid into the injection nozzle through the adjusting hole while moving along the flow path of the fluid distribution member; And Injecting the fluid from the injection nozzle, The flow rate of the fluid supplied to the injection nozzle is adjusted according to the size of the control hole. The method of claim 7, wherein the coupling of the flow rate control unit to the injection nozzle comprises: a flow rate control unit having a control hole having a size corresponding to a predetermined flow rate of the injection nozzle, among flow rate control units having different size control holes; Selecting and coupling to the injection nozzle. A chamber providing a process space; A support member provided in the process space and supporting a substrate; And A fluid supply unit which is located outside the support member when viewed in a plane and supplies a fluid for processing the substrate, The fluid supply unit, A fluid distribution member positioned outside the support member in plan view and providing a flow path through which fluid for processing the substrate moves; At least one injection nozzle positioned between the support member and the fluid distribution member in plan view, coupled to the fluid distribution member, for injecting and receiving the fluid from the fluid distribution member; And And a flow rate control unit positioned between the injection nozzle and the fluid distribution member and configured to adjust a flow rate of the fluid provided to the injection nozzle. The method of claim 9, The injection nozzle has an injection hole which is connected to the flow path of the fluid distribution member, the fluid is introduced, The flow rate control unit has a control hole for adjusting the flow rate of the injection nozzle, And the fluid discharged from the fluid supply line flows into the injection hole through the control hole. The method of claim 10, The fluid distribution line has a ring shape and surrounds the support member in plan view, And the injection nozzle is located inside the fluid distribution member.

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