KR20090068463A - Method of fabricating semiconductor - Google Patents

Method of fabricating semiconductor Download PDF

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Publication number
KR20090068463A
KR20090068463A KR1020070136089A KR20070136089A KR20090068463A KR 20090068463 A KR20090068463 A KR 20090068463A KR 1020070136089 A KR1020070136089 A KR 1020070136089A KR 20070136089 A KR20070136089 A KR 20070136089A KR 20090068463 A KR20090068463 A KR 20090068463A
Authority
KR
South Korea
Prior art keywords
etching target
target layer
layer
photoresist pattern
titanium oxide
Prior art date
Application number
KR1020070136089A
Other languages
Korean (ko)
Inventor
문주형
Original Assignee
주식회사 동부하이텍
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 주식회사 동부하이텍 filed Critical 주식회사 동부하이텍
Priority to KR1020070136089A priority Critical patent/KR20090068463A/en
Publication of KR20090068463A publication Critical patent/KR20090068463A/en

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
    • H01L21/02186—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing titanium, e.g. TiO2
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A method for manufacturing a semiconductor device is provided to improve adhesive force between a photoresist pattern and an etching target layer by spraying adhesive power improving agents onto the etching target layer. An etching target layer(200) including titanium oxide is formed on a semiconductor substrate(100). Ultraviolet rays are irradiated at the etching target layer. Adhesive power improving agents are sprayed onto the etching target layer. A photoresist pattern is formed on an adhesive power improving film and an etching target layer is formed. A redundant etching target layer including at least one of titanium or titanium nitride is formed. The redundant etching target layer is exposed under oxygen plasma.

Description

Manufacturing Method of Semiconductor Device {METHOD OF FABRICATING SEMICONDUCTOR}

The embodiment relates to a method of manufacturing a semiconductor device.

Mask processes are widely used in semiconductor processes. In particular, a photosensitive agent is apply | coated to a metal film etc., a mask pattern is formed by an exposure process, a development process, etc., and a metal film is patterned.

At this time, the photosensitizer should be in close contact with the metal film.

The embodiment is to provide a method of manufacturing a semiconductor device to improve the adhesion between the photoresist pattern and the etching target layer.

A method of manufacturing a semiconductor device according to an embodiment may include forming an etching target layer including titanium oxide, irradiating ultraviolet rays to the etching target layer, spraying an adhesion improving solution on the etching target layer, and forming an adhesive improvement layer on the etching target layer. Forming a photoresist pattern thereon.

The method of manufacturing a semiconductor device according to the embodiment includes irradiating ultraviolet rays to titanium oxide.

Since titanium oxide has photohydrophilicity, the bonding force between the etching target layer irradiated with ultraviolet rays and the adhesion improving liquid is improved.

Therefore, according to the method of manufacturing the semiconductor device according to the embodiment, the adhesion between the adhesive force improving liquid and the etching target layer is improved, and as a result, the adhesive force between the photoresist pattern and the etching target layer is improved.

1 to 6 are cross-sectional views illustrating a method of patterning an etch target layer according to an embodiment.

Referring to FIG. 1, a preliminary etching target layer 201 is formed on a semiconductor substrate 100. The preliminary etching target layer 201 includes titanium or titanium nitride. The preliminary etching target layer 201 may be formed by a chemical vapor deposition process.

Alternatively, the preliminary etching target layer 201 may be formed by sequentially stacking an aluminum layer, a titanium layer, and a titanium nitride layer.

Alternatively, the preliminary etching target layer 201 may be formed on the interlayer insulating layer.

Thereafter, an organic layer 401 is formed on the preliminary etching target layer 201, and the organic layer 401 is removed by an oxygen plasma.

For example, the organic layer 401 may be a photoresist pattern 400. That is, the organic layer 401 may not be formed as intended, and may be a photoresist pattern that is removed to form it again.

Referring to FIG. 2, after the organic layer 401 is removed by the oxygen plasma, the preliminary etching target layer 201 is exposed to the oxygen plasma. Accordingly, part of the preliminary etching target layer 201 reacts with the oxygen plasma to form an etching target layer 200 including titanium oxide.

For example, the upper surface of the preliminary etching target layer 201 is exposed to the oxygen plasma to form a titanium oxide layer 210.

In addition, the titanium oxide layer 210 includes a compound in the form of TiOxNy, for example. In more detail, the titanium oxide layer 210 includes TiO 2 .

Referring to FIG. 3, ultraviolet rays are irradiated onto the titanium oxide layer 210. More specifically, the titanium oxide layer 210 is irradiated with ultraviolet light having a wavelength of 180 to 320 nm for about 1 to 2 minutes. For example, the ultraviolet light may have an intensity of about 100 lux to 200 lux.

At this time, the titanium oxide contained in the titanium oxide layer 210 is irradiated with ultraviolet rays, thereby having hydrophilicity.

Referring to FIG. 4, after ultraviolet rays are irradiated onto the titanium oxide layer 210, an adhesion improving solution is sprayed onto the etching target layer to form an adhesion improving layer 300. In more detail, the adhesion improving layer 300 is formed on the titanium oxide layer 210.

Examples of the material that can be used as the adhesion improving layer 300 may include hexamethyldisilazane (HDMS).

At this time, the titanium oxide layer 210 is irradiated with ultraviolet light, has hydrophilicity, and the bonding force with the adhesion improving layer 300 is improved.

For example, the binding force between oxygen of the titanium oxide and hydrogen contained in the hexamethyldisilane is improved.

Referring to FIG. 5, after the adhesion improvement layer 300 is formed, a photoresist pattern 400 is formed on the adhesion improvement layer 300.

In order to form the photoresist pattern 400, a photoresist film is formed on the adhesion improving layer 300, the photoresist film is patterned by an exposure process and a developing process, and the adhesion improving layer 300 The photoresist pattern 400 is formed thereon.

Referring to FIG. 6, the etching target layer is etched using the photoresist pattern 400 as an etching mask, and a metal pattern 202 is formed on the semiconductor substrate 100.

The metal pattern 202 may be a wiring pattern used in the semiconductor device.

The adhesion improving layer 300 is interposed between the photoresist pattern 400 and the etching target layer 200 to improve the bonding force between the photoresist pattern 400 and the etching target layer 200.

That is, the adhesive force between the photoresist pattern 400 and the adhesive force improving layer 300 is greater than the adhesive force between the etching target layer 200 and the photoresist pattern 400.

In addition, the titanium oxide layer 210 is irradiated with ultraviolet rays, the titanium oxide layer 210 will have a hydrophilicity.

Therefore, the bonding force between the titanium oxide layer 210 and the adhesion improving layer 300 is improved, and as a result, the bonding force between the photoresist pattern 400 and the etching target layer 200 is improved.

Therefore, according to an embodiment, when the etching target layer 200 is patterned, foreign matter does not penetrate between the photoresist pattern 400 and the etching target layer 200, and the etching target layer 200 is to be designed. Etched as.

That is, the method of etching the etching target layer 200 according to the embodiment may reduce the defect rate of the semiconductor device as compared with the case of not irradiating the titanium oxide layer 210 with ultraviolet rays.

1 to 6 are cross-sectional views illustrating a method of patterning an etch target layer according to an embodiment.

Claims (4)

Forming an etching target layer including titanium oxide; Irradiating ultraviolet rays to the etching target layer; Spraying an adhesion improving liquid on the etching target layer; And Forming a photoresist pattern on the adhesion improving film. The method of claim 1, wherein the adhesion improving liquid comprises hexamethyldisilane. The method of claim 1, wherein the forming of the etching target layer comprises: Forming a pre-etched target layer including at least one of titanium or titanium nitride; And exposing the preliminary etching target layer to oxygen plasma. According to claim 1, In the step of irradiating the ultraviolet light, The method of manufacturing a semiconductor device to irradiate 180 to 320nm ultraviolet rays to the etching target film.
KR1020070136089A 2007-12-24 2007-12-24 Method of fabricating semiconductor KR20090068463A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020070136089A KR20090068463A (en) 2007-12-24 2007-12-24 Method of fabricating semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020070136089A KR20090068463A (en) 2007-12-24 2007-12-24 Method of fabricating semiconductor

Publications (1)

Publication Number Publication Date
KR20090068463A true KR20090068463A (en) 2009-06-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070136089A KR20090068463A (en) 2007-12-24 2007-12-24 Method of fabricating semiconductor

Country Status (1)

Country Link
KR (1) KR20090068463A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244114A (en) * 2020-02-10 2020-06-05 Tcl华星光电技术有限公司 Display panel

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111244114A (en) * 2020-02-10 2020-06-05 Tcl华星光电技术有限公司 Display panel
CN111244114B (en) * 2020-02-10 2023-10-17 Tcl华星光电技术有限公司 display panel
US11961841B2 (en) 2020-02-10 2024-04-16 Tcl China Star Optoelectronics Technology Co., Ltd. Display panel

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