KR20090063976A - Composition for resin black matrix - Google Patents

Composition for resin black matrix Download PDF

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KR20090063976A
KR20090063976A KR1020070131523A KR20070131523A KR20090063976A KR 20090063976 A KR20090063976 A KR 20090063976A KR 1020070131523 A KR1020070131523 A KR 1020070131523A KR 20070131523 A KR20070131523 A KR 20070131523A KR 20090063976 A KR20090063976 A KR 20090063976A
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anhydride
formula
resin composition
black matrix
acid
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KR1020070131523A
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Korean (ko)
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KR101247839B1 (en
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이윤재
서영성
강민주
안경원
윤경근
강충석
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주식회사 코오롱
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    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/027Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0388Macromolecular compounds which are rendered insoluble or differentially wettable with ethylenic or acetylenic bands in the side chains of the photopolymer
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Optical Filters (AREA)
  • Macromonomer-Based Addition Polymer (AREA)
  • Materials For Photolithography (AREA)

Abstract

A photosensitive resin composition for resin black matrix and the resin black matrix using the same are provided to show excellent sensitivity, adhesion force to a substrate, heat resistance and pattern stability and to improve development margin and coating uniformity. A photosensitive resin composition for resin black matrix contains compounds with acrylate multi-functional groups in main chains represented by the formula 1. In the formula 1, R1 and R2 are identically or differently hydrogen or methyl group; Y is residue of acid anhydride; Z is residue of acid dianhydride; and a molar ratio of m and n is 100:0~0:100. The photosensitive resin composition comprises: 100 parts of compounds having the acrylate multi-functional groups; 0.1-99wt% of multi-functional monomers; 0.1-80 parts of silicone-based compound containing epoxy groups; 0.01-20 parts of photopolymerization initiator or photosensitizer; a pigment; and a solvent.

Description

수지 블랙 매트릭스용 감광성 수지 조성물{Composition for Resin Black Matrix}Photosensitive resin composition for resin black matrix {Composition for Resin Black Matrix}

본 발명은 감광성 수지 조성물에 관한 것으로 더욱 상세하게는 액정 디스플레이의 블랙매트릭스를 형성하는 감광성 수지 조성물에 관한 것이다.The present invention relates to a photosensitive resin composition, and more particularly, to a photosensitive resin composition for forming a black matrix of a liquid crystal display.

액정 디스플레이(LCD) 장치는 액정 자체가 발광을 할 수 없기 때문에 장치의 후면에 별도의 광원을 설치하여, 각 화소(pixel)에 설치된 액정을 통해 통과광의 세기를 조절하여 계조(contrast)를 구현한다. 이를 보다 구체적으로 살펴보면, 액정 디스플레이 장치는 액정 물질의 전기적 특성을 이용하여 빛의 투과율을 조절하는 장치로, 장치 뒷면의 광원 램프에서 발광하여 각종 기능성 프리즘 필름 또는 시트를 통과하여 균일도와 방향성이 제어된 빛을 컬러 필터를 통과시켜 색상을 구현하도록 하고, 전기적인 방법으로 각 화소의 계조(contrast)를 제어하여 화상을 구현하는 간접 발광 방식의 디스플레이 장치이다.In the liquid crystal display (LCD) device, since the liquid crystal itself cannot emit light, a separate light source is installed at the rear of the device, and the contrast is adjusted by adjusting the intensity of the passing light through the liquid crystal installed in each pixel. . In more detail, the liquid crystal display device is a device for controlling the light transmittance by using the electrical properties of the liquid crystal material, the uniformity and the directionality is controlled by passing through various functional prism films or sheets by emitting light from the light source lamp on the back of the device It is a display device of an indirect light emission type that implements an image by passing light through a color filter to implement colors and controlling the contrast of each pixel by an electric method.

상기 컬러필터는 통상적으로 플라스틱 또는 유리로 된 기판 상부면에 블랙매트릭스를 형성하고, 레드(R), 그린(G), 블루(B) 등의 다른 색상이 순차, 스트라이프상 또는 모자이크상 등의 색패턴으로 형성된다. The color filter typically forms a black matrix on the upper surface of a plastic or glass substrate, and other colors such as red (R), green (G), and blue (B) are sequentially, stripe-like or mosaic-like. It is formed into a pattern.

이러한 컬러필터의 대표적인 제조방법은 염색법, 인쇄법, 안료분산법, 전착법 등이 있으며, 특히 색재료를 함유하는 광중합성 조성물을 투명기판 상에 도포하고 형성하고자 하는 패턴을 노광한 후 비노광부위를 용제로 제거하여 열경화시키는 일련의 단계를 반복하는 안료분산법은 컬러필터 화소의 위치, 막두께 등의 정밀도가 높고, 내광성, 내열성 등의 내구성이 뛰어나고, 핀홀 등의 결함이 적기 때문에 널리 채용되고 있다. Representative methods of manufacturing such color filters include dyeing, printing, pigment dispersion, electrodeposition, and the like. In particular, a photopolymerizable composition containing a color material is coated on a transparent substrate, and a pattern to be formed is exposed, and then a non-exposed part is exposed. The pigment dispersion method, which repeats a series of steps of removing and thermally curing the solvent with a solvent, is widely employed because of high accuracy of the position of the color filter pixel, film thickness, etc., excellent durability of light resistance, heat resistance, and less defects such as pinholes. have.

여기서 블랙매트릭스는 액정 디스플레이의 고화질, 고대비(high contrast) 표시를 위하여 레드(R), 그린(G), 블루(B)의 3색의 픽셀 간에 색혼합을 방지하기 위하여 반드시 필요하며, 특히 박막 트랜지스터를 이용한 액티브 매트릭스 구동방식의 TFT-LCD의 경우에는 고도의 차광성이 요구된다. Here, the black matrix is necessary to prevent color mixing between the pixels of three colors of red (R), green (G), and blue (B) for high-definition and high contrast display of the liquid crystal display. In the case of an active matrix driving type TFT-LCD using a transistor, high light shielding property is required.

종래 블랙매트릭스를 제조하는 방법으로는 크롬 등의 금속막을 진공 증착 등의 방법으로 기판 상에 형성하고 감광성 수지를 코팅한 후 포토리소그래피(photolithography)로 패터닝(patterning)하고 크롬을 에칭하는 방법이 사용되었다. 크롬을 이용한 블랙매트릭스는 박막으로 제조할 수 있고, 내화학성과 높은 차광성능을 얻을 수 있는 장점이 있지만, 광반사율이 높아 표시 품질이 저하될 뿐만 아니라 전반사를 위한 별도의 처리공정이 필요하게 되고, 크롬 스퍼터링 등의 진공 증착 프로세스가 수반되기 때문에 제조비용이 상승하며, 또한 크롬 에칭이 필요하 여 에칭 공정 후 발생되는 폐액이 환경오염을 발생하는 문제점이 있다.Conventionally, as a method of manufacturing a black matrix, a metal film such as chromium is formed on a substrate by vacuum deposition or the like, coated with a photosensitive resin, patterned by photolithography, and etched chromium. . The black matrix using chromium can be manufactured as a thin film, and has the advantage of obtaining chemical resistance and high light shielding performance, but due to the high light reflectivity, not only the display quality is deteriorated, but also a separate treatment process is required for total reflection. Since a vacuum deposition process such as chromium sputtering is involved, manufacturing costs increase, and there is a problem in that waste liquid generated after the etching process generates environmental pollution, which requires chromium etching.

이에 최근에는 수지를 사용한 블랙매트릭스에 관한 연구가 활발하게 이루어지고 있다. 안료분산법에 의해 제조되는 블랙매트릭스에 사용되는 수지는 크게 바인더 수지로써 지지체 역할 및 노광시 광과 반응하여 포토레지스트상을 형성하는 고분자화합물과, 노광시 광과 반응하여 포토레지스트상을 형성하는 광중합성 모노머의 성분으로 구성된다. 이외에는 안료, 중합개시제, 에폭시수지, 용제와 기타 첨가제 등을 포함하는 감광성 수지 조성물에 의해 제조된다.Recently, studies on black matrices using resins have been actively conducted. The resins used in the black matrix produced by the pigment dispersion method are largely binder resins, which serve as a support, and polymer compounds that react with light during exposure to form a photoresist image, and light that reacts with light during exposure to form a photoresist image. It consists of the component of a synthetic monomer. In addition, it is produced by a photosensitive resin composition containing a pigment, a polymerization initiator, an epoxy resin, a solvent and other additives.

안료분산법에 사용되는 바인더 수지로는 예를 들면, 일본특개소60-237403호에 기재된 폴리이미드수지; 일본특개평1-200353호, 일본특개평4-7373호, 일본특개평4-91173호 등에 기재된 아크릴계 중합체와 아지드 화합물로 이루어진 감광성 수지; 일본특개평7-64281호, 일본특개평7-64282호, 일본특개평8-278630호, 일본특개평6-1938호 및 일본특개평5-339356호에서는 카도계 바인더 수지; 대한민국 특허공고 제97-6519호, 대한민국 특허등록 제147191호 등에 기재된 아크릴계 중합체로 이루어진 감광성 수지; 일본특개평1-152449호에 기재된 아크릴레이트 단량체, 유기중합체 결합제 및 광중합개시제로 이루어진 라디칼 중합형의 감광성 수지; 일본특개평4-163552호와 대한민국 특허공고 제92-5780호에 기재된 페놀수지, N-메틸올 구조를 갖는 가교제 및 광산발생제로 이루어진 감광성 수지 등 여러 가지가 제안되고 있다.As binder resin used for a pigment dispersion method, For example, the polyimide resin of Unexamined-Japanese-Patent No. 60-237403; Photosensitive resin which consists of an acryl-type polymer and an azide compound as described in Unexamined-Japanese-Patent No. 1-200353, Unexamined-Japanese-Patent No. 4-7373, etc .; Japanese Patent Laid-Open No. 7-64281, Japanese Patent Laid-Open No. 7-64282, Japanese Patent Laid-Open No. 8-278630, Japanese Patent Laid-Open No. 6-1938 and Japanese Patent Laid-Open No. 5-339356; Photosensitive resin comprising an acrylic polymer described in Korean Patent Publication No. 97-6519, Korean Patent Registration No. 147191; Radical polymerization type photosensitive resin which consists of an acrylate monomer, an organic polymer binder, and a photoinitiator of Unexamined-Japanese-Patent No. 1-152449; A variety of proposals have been made, such as phenol resins described in Japanese Patent Laid-Open No. 4-163552 and Korean Patent Publication No. 92-5780, photosensitive resins composed of a crosslinking agent having a N-methylol structure and a photoacid generator.

카도계 수지는 고감도이면서 산소의 영향을 받지 않고 내열성, 내수축성, 투명성 등이 우수하나, 벌키(bulky)한 분자구조로 인하여 접착성이 떨어지고 평탄도 가 낮은 단점이 있으며, 광학밀도를 맞추기 위하여 블랙안료의 함량이 다른 착색 감광성 수지조성물에 비하여 많으므로 접착성 및 표면안정성이 저하되는 문제가 있다.Cardo-based resins are highly sensitive and excellent in heat resistance, shrinkage and transparency without being affected by oxygen, but have the disadvantage of poor adhesion and low flatness due to the bulky molecular structure. Since the content of the pigment is much higher than that of other colored photosensitive resin compositions, there is a problem in that adhesiveness and surface stability are lowered.

또한, 블랙매트릭스의 제조시 차광성을 좋게 하기 위하여 착색 안료의 배합량을 극히 많이 하여야 하는데, 그 결과 조액시 점도가 증가하여 취급이 곤란해지거나 형성된 피막의 강도 또는 기판에 대한 밀착성이 현저하게 저하된다는 문제가 있다. 따라서 막두께가 두꺼워지기 때문에 고농도의 블랙매트릭스를 형성한 경우 카본 블랙 등의 분산된 차광 재료의 광 흡수성이 높아 막 밑부분까지 노광된 빛이 미치지 않게 되어, 막 하부에는 광경화 부족이 발생되고 현상공정시 패턴 옆면의 과다한 현상으로 인하여 최종적으로 얻어지는 패턴형상이 사다리꼴이 되는 문제점이 있었다. In addition, when the black matrix is manufactured, the amount of the coloring pigment should be extremely high in order to improve the light shielding properties. As a result, the viscosity increases during the preparation, making handling difficult, or the strength of the formed film or the adhesion to the substrate remarkably decreased. there is a problem. Therefore, since the film thickness becomes thick, when a high concentration of black matrix is formed, the light absorbing property of dispersed light blocking materials such as carbon black is high so that the light exposed to the bottom of the film does not reach, and there is a lack of photocuring under the film. Due to the excessive phenomenon of the pattern side surface during the process, there is a problem that the finally obtained pattern shape becomes a trapezoid.

이러한 문제점을 해결하기 위하여 종래 측쇄에 지환족 구조를 갖는 아크릴계의 바인더 수지와 측쇄에 방향족 구조를 갖는 아크릴계 바인더 수지를 혼합사용한 발명이 대한민국 특허등록 제367472호에 개시되어 있다. 또한 알칼리 가용성 수지 바인더와 에틸렌성 불포화 이중결합을 갖는 다관능성 모노머 등을 포함한 감광성 수지조성물에 알킬티오 그룹이 도입된 트리아진계 화합물을 광중합 개시제로 사용하여 기판과의 밀착성을 향상시킬 수 있는 발명이 대한민국 등록특허 431461호에 개시되어 있다.In order to solve such a problem, an invention using a conventional acrylic resin binder having an alicyclic structure in the side chain and an acrylic binder resin having an aromatic structure in the side chain is disclosed in Korean Patent Registration No. 367472. In addition, the invention that can improve the adhesion to the substrate by using a triazine-based compound having an alkylthio group introduced into the photosensitive resin composition including an alkali-soluble resin binder and a polyfunctional monomer having an ethylenically unsaturated double bond as a photoinitiator It is disclosed in the registered patent 431461.

본 발명은 기판과의 밀착력, 내열성, 패턴안정성이 우수할 뿐만 아니라 감도가 개선되고 현상마진이 개선되어 코팅균일도가 향상된 감광성 수지 조성물을 제공하고자 한다.The present invention is to provide a photosensitive resin composition having excellent adhesion to the substrate, heat resistance, pattern stability as well as improved sensitivity and development margin to improve coating uniformity.

본 발명의 한 구현예에서는 다음 화학식 1로 표시되는, 주쇄에 아크릴레이트기를 갖는 다관능기 구조를 가지는 수지 화합물을 포함하는 감광성 수지 조성물을 제공한다. One embodiment of the present invention provides a photosensitive resin composition comprising a resin compound having a polyfunctional group structure having an acrylate group in the main chain, represented by the following formula (1).

Figure 112007090258533-PAT00001
Figure 112007090258533-PAT00001

상기 식에서, R1 및 R2는 서로 같거나 다른 것으로, 수소원자 또는 메틸기이 고, Y은 산무수물의 잔기이고, Z는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.In the above formula, R1 and R2 are the same as or different from each other, and are a hydrogen atom or a methyl group, Y is a residue of an acid anhydride, Z is a residue of an acid anhydride, and m: n is a molar ratio of 100: 0 to 0: 100. Ratio.

본 발명 구현예에서는 또한 (A) 상기 화학식 1로 표시되는, 주쇄에 아크릴레이트 다관능기를 갖는 화합물 100중량부; (B) 다관능성 모노머 0.1~99중량부; (C) 에폭시기를 함유하는 실리콘계 화합물 0.1~80중량부; (D) 광중합 개시제 혹은 광증감제 0.01~20중량부; (E) 안료성분; 및 (F) 용매를 포함하는 감광성 수지 조성물을 제공한다.In the embodiment of the present invention (A) 100 parts by weight of a compound having an acrylate polyfunctional group in the main chain, represented by the formula (1); (B) 0.1 to 99 parts by weight of a multifunctional monomer; (C) 0.1 to 80 parts by weight of a silicone compound containing an epoxy group; (D) 0.01 to 20 parts by weight of the photopolymerization initiator or the photosensitizer; (E) pigment component; And (F) It provides a photosensitive resin composition containing a solvent.

본 발명 구현예들에 따른 감광성 수지 조성물에 있어서, 화학식 1로 표시되는 화합물은 Y는 말레인산 무수물(Maleic anhydride), 숙신산 무수물(Succinic anhydride), 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-테트라하이드로프탈산 무수물(3,4,5,6-Tetrahydrophthalic Anhydride), 프탈산 무수물(Phthalic Anhydride), 이타콘산 무수물(Itaconic anhydride), 1,2,4-벤젠트리카복실산 무수물(1,2,4-Benzenetricarboxylic Anhydride), 메틸-테트라하이드로프탈산 무수물(Methyl-Tetrahydrophthalic Anhydride), 시트라콘산 무수물(Citraconic Anhydride), 2,3-디메틸말레인산 무수물(2,3-Dimethylmaleic Anhydride), 1-사이클로펜텐-1,2,-디카복실산 무수물(1-Cyclopentene-1,2-Dicarboxylic anhydride), 시스(5-노보넨-엔도-2,3-디카복실산 무수물(cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) 및 1,8-나프탄산 무수물(1,8-Naphthalic Anhydride) 중에서 선택된 산무수물의 잔기일 수 있고, 또한 Z는 1,2,4,5-벤젠테트라카복실산 이무수물(1,2,4,5- Bezenetetracarboxylic Dianhydride), 4,4'-바이프탈산 이무수물(4,4'-Biphthalic Dianhydride), 3,3',4,4'-벤조페논테트라카복실산 이무수물(3,3',4,4'-Benzophenonetetracarboxylic Dianhydride), 피로멜리트산 이무수물(Pyromelitic Dianhydride), 1,4,5,8-나프탈렌테트라카복실산 이무수물(1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-테트라카복실산 무수물(1,2,4,5-Tetracarboxylic Anhydide), 메틸노보넨-2,3-디카복실산 무수물(Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4'-[2,2,2-트리플로로-1-(트리플로로메틸)에틸리덴]디프탈산 무수물(4,4'-[2,2,2-Trifluoro-1-(Trifluoromethyl)Ethylidene]Diphthalic Anhydride), 4,4'-옥시디프탈산 무수물(4,4`-Oxydiphthalic Anhydride) 및 에틸렌글리콜 비스(안하이드로 트리멜리테이트)(Ethylene Glycol Bis (Anhydro Trimelitate)) 중에서 선택된 산2무수물의 잔기일 수 있다. In the photosensitive resin composition according to the embodiments of the present invention, the compound represented by Formula 1 is Y is maleic anhydride, Maleic anhydride, Succinic anhydride, cis-1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-tetrahydrophthalic anhydride, Phthalic Anhydride, Itaconic Anhydride (Itaconic anhydride), 1,2,4-benzenetricarboxylic anhydride (1,2,4-Benzenetricarboxylic Anhydride), methyl-tetrahydrophthalic anhydride, citraconic anhydride, 2, 3-dimethylmaleic anhydride, 1-cyclopentene-1,2, -dicarboxylic anhydride, 1-Cyclopentene-1,2-Dicarboxylic anhydride, cis (5-norbornene-endo-2) , 3-dicarboxylic anhydride (cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) and 1,8-naphtanic anhydride (1,8-Naphth alic Anhydride), and Z is 1,2,4,5-benzenetetracarboxylic dianhydride (1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-biphthalic dianhydride Water (4,4'-Biphthalic Dianhydride), 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-Benzophenonetetracarboxylic Dianhydride), pyromellitic dianhydride (Pyromelitic Dianhydride) ), 1,4,5,8-naphthalenetetracarboxylic dianhydride (1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-tetracarboxylic anhydride (1,2,4,5-Tetracarboxylic Anhydide ), Methylnorbornene-2,3-dicarboxylic anhydride, 4,4 '-[2,2,2-trifluoro-1- (trifluoromethyl) ethylidene ] Diphthalic Anhydride (4,4 '-[2,2,2-Trifluoro-1-Ethylidene] Diphthalic Anhydride), 4,4'-Oxydiphthalic Anhydride and Ethylene Glycol Bis (Anhydro Trimellitate) (Ethylene Glycol Bis ( Anhydro Trimelitate)) may be a residue of an acid dianhydride selected from.

또한, 화학식 1로 표시되는 화합물은 산무수물과 산2무수물의 몰비인 m:n의 비율이 100/0~50/50의 범위, 100/0~70/30의 범위, 또는 0/100~50/50의 범위에 있는 것일 수 있고, 화학식 1로 표시되는 화합물은 전체 수지 조성물 중 5~80중량%로 포함될 수 있다. In addition, the compound represented by the formula (1) has a ratio of m: n, which is a molar ratio of acid anhydride and acid anhydride, in the range of 100/0 to 50/50, in the range of 100/0 to 70/30, or 0/100 to 50 It may be in the range of / 50, the compound represented by Formula 1 may be included in 5 to 80% by weight of the total resin composition.

또한, (E)안료성분은 입자크기 50~150nm인 카본블랙이며, 전체 수지 조성물 중 1~90중량%로 포함될 수 있다. In addition, the pigment component (E) is carbon black having a particle size of 50 ~ 150nm, may be included in 1 to 90% by weight of the total resin composition.

또한, 본 발명의 한 구현예에서는 이와 같은 조성물을 분산 제조하여 얻어지는 점도 1~5 cps의 범위에 있는 수지 블랙매트릭스를 제공하며, 이는 이를 코팅한 후 리소그라피에 의해 형성된 패턴에 있어서 단위 두께당(㎛) 광학밀도가 3.0~6.0일 수 있다. In addition, one embodiment of the present invention provides a resin black matrix having a viscosity of 1 to 5 cps obtained by dispersion preparation of such a composition, which is coated per unit thickness (μm per unit in the pattern formed by lithography after coating it). ) The optical density may be 3.0 to 6.0.

본 발명에 따르면 감도, 기판과의 밀착력, 내열성, 패턴안정성이 우수할 뿐만 아니라, 30mJ/㎠의 저노광량에서 포스트 베이크 후 매우 안정된 현상 패턴을 갖는 감광성 수지 조성물을 제공할 수 있으며, 이에 따라 LCD 디바이스의 다양한 종류 및 크기에 따라 신속하게 대응할 수 있으므로, 액정 디스플레이 산업에 있어서도 유용하게 활용될 수 있다.According to the present invention, it is possible to provide a photosensitive resin composition having not only excellent sensitivity, adhesion to a substrate, heat resistance and pattern stability, but also a very stable developing pattern after post-baking at a low exposure amount of 30 mJ / cm 2, thereby providing an LCD device. It can be quickly responded to according to various kinds and sizes of can be usefully used in the liquid crystal display industry.

이와 같은 본 발명을 더욱 상세하게 설명하면 다음과 같다. The present invention will be described in more detail as follows.

(1) 화학식 1로 표시되는 화합물(1) a compound represented by formula (1)

본 발명에 따른 감광성 수지 조성물은 화학식 1로 표시되는 화합물을 포함하는데, 이는 구체적으로는 다음과 같은 방법에 의해 얻어질 수 있다: 화학식 2의 비스페놀 플로오렌형 에폭시 화합물과 화학식 3의 (메타)아크릴산을 반응시켜 화학식 4로 표시되는 화합물을 합성하고, 양말단에 현상성을 부여할 수 있도록 산무수물 또는 산2무수물로 처리한 후, 다관능기를 부여하기 위해 화학식 5로 표시되는 에폭시 아크릴레이트를 반응시켜 화학식 1 화합물을 합성한다. The photosensitive resin composition according to the present invention includes a compound represented by Formula 1, which may be specifically obtained by the following method: a bisphenol fluorene type epoxy compound of Formula 2 and a (meth) acrylic acid of Formula 3 Reacted to synthesize a compound represented by the formula (4), and treated with an acid anhydride or acid 2 anhydride to give developability to the sock end, and then react the epoxy acrylate represented by the formula (5) to give a polyfunctional group To synthesize a compound of Formula 1.

화학식 1Formula 1

Figure 112007090258533-PAT00002
Figure 112007090258533-PAT00002

상기 식에서, R1 및 R2는 서로 같거나 다른 것으로, 수소원자 또는 메틸기이고, Y은 산무수물의 잔기이고, Z는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.Wherein R1 and R2 are the same as or different from each other, and are a hydrogen atom or a methyl group, Y is a residue of an acid anhydride, Z represents a residue of an acid anhydride, and m: n is a molar ratio of 100: 0 to 0: 100. Ratio.

Figure 112007090258533-PAT00003
Figure 112007090258533-PAT00003

Figure 112007090258533-PAT00004
Figure 112007090258533-PAT00004

상기 식에서, R1은 수소원자 또는 메틸기이다. In the above formula, R1 is a hydrogen atom or a methyl group.

Figure 112007090258533-PAT00005
Figure 112007090258533-PAT00005

상기 식에서, R1은 수소원자 또는 메틸기이다.In the above formula, R1 is a hydrogen atom or a methyl group.

Figure 112007090258533-PAT00006
Figure 112007090258533-PAT00006

상기 식에서, R2는 수소원자 또는 메틸기이다.Wherein R2 is a hydrogen atom or a methyl group.

화학식 1로 표시되는 화합물에 있어서 산무수물과 산 2무수물의 몰비인 m:n의 비율은 100/0~0/100의 범위일 수 있다. 바람직하기로는 m:n의 비율이 100/0~50/50, 또는 0/100~50/50의 범위인 것이다. In the compound represented by Formula 1, the ratio of m: n, which is a molar ratio of acid anhydride and acid dianhydride, may be in a range of 100/0 to 0/100. Preferably, the ratio of m: n is in the range of 100/0 to 50/50, or 0/100 to 50/50.

화학식 1로 표시되는 화합물에 있어서, Y는 말레인산 무수물(Maleic anhydride), 숙신산 무수물(Succinic anhydride), 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-테트라하이드로 프탈산 무수물(3,4,5,6-Tetrahydrophthalic Anhydride), 프탈산 무수물(Phthalic Anhydride), 이타콘산 무수물(Itaconic anhydride), 1,2,4-벤젠트리카복실산 무수물(1,2,4-Benzenetricarboxylic Anhydride), 메틸-테트라하이드로프탈산 무수물(Methyl-Tetrahydrophthalic Anhydride), 시트라콘산 무수물(Citraconic Anhydride), 2,3-디메틸말레인산 무수물(2,3-Dimethylmaleic Anhydride), 1-사이클로펜텐-1,2,-디카복실산 무수물(1-Cyclopentene-1,2-Dicarboxylic anhydride), 시스(5-노보넨-엔도-2,3-디카복실산 무수물(cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) 및 1,8-나프탄산 무수물(1,8-Naphthalic Anhydride) 중에서 선택된 산무수물의 잔기일 수 있다. In the compound represented by the formula (1), Y is maleic anhydride, Succinic anhydride, cis-1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6- Tetrahydrophthalic Anhydride, 3,4,5,6-Tetrahydrophthalic Anhydride (3,4,5,6-Tetrahydrophthalic Anhydride), Phthalic Anhydride, Itaconic Anhydride, 1,2,4- Benzene Tricarboxylic Anhydride (1,2,4-Benzenetricarboxylic Anhydride), Methyl-Tetrahydrophthalic Anhydride, Citraconic Anhydride, 2,3-Dimethylmaleic Anhydride (2,3-Dimethylmaleic Anhydride) Anhydride), 1-cyclopentene-1,2, -dicarboxylic anhydride (1-Cyclopentene-1,2-Dicarboxylic anhydride), cis (5-norbornene-endo-2,3-dicarboxylic acid anhydride (cis-5- Residues of acid anhydrides selected from Norbonene-endo-2,3-Dicarboxylic Anhydride) and 1,8-Naphthalic Anhydride There.

그리고 Z는 1,2,4,5-벤젠테트라카복실산 이무수물(1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-바이프탈산 이무수물(4,4'-Biphthalic Dianhydride), 3,3',4,4'-벤조페논테트라카복실산 이무수물(3,3',4,4'-Benzophenonetetracarboxylic Dianhydride), 피로멜리트산 이무수물(Pyromelitic Dianhydride), 1,4,5,8-나프탈렌테트라카복실산 이무수물(1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-테트라카복실산 무수물(1,2,4,5-Tetracarboxylic Anhydide), 메틸노보넨-2,3-디카복실산 무수물(Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4'-[2,2,2-트리플로로-1-(트리플로로메틸)에틸리덴]디프탈산 무수물(4,4'-[2,2,2-Trifluoro-1-(Trifluoromethyl)Ethylidene]Diphthalic Anhydride), 4,4'-옥시디프탈산 무수물(4,4`-Oxydiphthalic Anhydride) 및 에틸렌글리콜 비스(안하이드로 트리멜리테이 트)(Ethylene Glycol Bis (Anhydro Trimelitate)) 중에서 선택된 산2무수물의 잔기일 수 있다. And Z is 1,2,4,5-benzenetetracarboxylic dianhydride (1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-biphthalic dianhydride (4,4'-Biphthalic Dianhydride), 3, 3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-Benzophenonetetracarboxylic Dianhydride), pyromellitic dianhydride, 1,4,5,8-naphthalenetetracarboxylic acid Dianhydrides (1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-tetracarboxylic anhydride (1,2,4,5-Tetracarboxylic Anhydide), methylnorbornene-2,3-dicarboxylic anhydride (Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4 '-[2,2,2-trifluoro-1- (trifluoromethyl) ethylidene] diphthalic anhydride (4,4'-[2, 2,2-Trifluoro-1- (Trifluoromethyl) Ethylidene] Diphthalic Anhydride, 4,4'-Oxydiphthalic Anhydride (4,4'-Oxydiphthalic Anhydride) and Ethylene Glycol Residue of acid 2 anhydride selected from Bis (Anhydro Trimelitate) There.

이와 같은 화학식 1로 표시되는 화합물은 전체 수지 조성 중 5~80중량%로 포함되는 것이 형성된 패턴의 내열성, 감도, 코팅성 개선에 있어서 바람직하다. Such a compound represented by the formula (1) is preferred for improving the heat resistance, sensitivity, coating properties of the formed pattern is formed of 5 to 80% by weight of the total resin composition.

(2) 다관능성 모노머(2) polyfunctional monomers

광에 의해 포토레지스트상을 형성하는 역할을 하는 다관능성 모노머는 구체적으로는, 프로필렌글리콜 메타크릴레이트, 디펜타에리쓰리톨 헥사아크릴레이트, 디펜타에리쓰리톨 아크릴레이트, 네오펜틸글리콜 디아크릴레이트, 1,6-헥산디올 디아크릴레이트, 1,6-헥산디올 아크릴레이트 테트라에틸렌글리콜 메타크릴레이트, 비스페녹시 에틸알콜 디아크릴레이트, 트리스히드록시에틸이소시아누레이트 트리메타크릴레이트, 트리메틸프로판 트리메타크릴레이트, 펜타에리 쓰리톨 트리메타 크릴레이트, 펜타에리쓰리톨 테트라메타크릴레이트 및 디펜타에리쓰리톨 헥사메타 크릴레이트로 이루어진 그룹 중에서 선택되는 1종 또는 2종 이상의 혼합물일 수 있다. Specific examples of the polyfunctional monomers that form the photoresist image by light include propylene glycol methacrylate, dipentaerythritol hexaacrylate, dipentaerythritol acrylate, neopentyl glycol diacrylate, 1,6-hexanediol diacrylate, 1,6-hexanediol acrylate tetraethylene glycol methacrylate, bisphenoxy ethyl alcohol diacrylate, trishydroxyethyl isocyanurate trimethacrylate, trimethylpropane It may be one or a mixture of two or more selected from the group consisting of trimethacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate and dipentaerythritol hexamethacrylate.

그 함량은 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.1~99중량부인 것이 UV에 의한 광개시제의 라디칼 반응으로 인한 가교결합으로 패턴형성 및 안료 및 입자 성분과의 결합력이 높아져서 광학밀도가 증가하는 점에 있어서 바람직하다. The content is 0.1 to 99 parts by weight based on 100 parts by weight of the compound represented by the formula (1) is cross-linked due to the radical reaction of the photoinitiator by UV due to the pattern formation and the binding strength of the pigment and particle components is increased to increase the optical density It is preferable at the point.

(3) 실리콘계 화합물(3) silicone compound

실리콘계 화합물은 수지 블랙 매트릭스에 있어서 물, 알칼리, 산, 유기용매 등의 화학물질에 대한 내화학성과 내열성, 접착성 등을 개선하기 위해 포함되는 것으로, 구체적으로는 페놀 노볼락형 에폭시 아크릴레이트, 비스페놀A형 아크릴레이트, 비스페놀 S형 아크릴레이트, 크레졸 노볼락형 에폭시 아크릴레이트 등의 에폭시기를 가지는 1종이상의 화합물일 수 있다. The silicone compound is included in the resin black matrix to improve chemical resistance, heat resistance, and adhesion to chemical substances such as water, alkali, acid, and organic solvent, and specifically, phenol novolac type epoxy acrylate and bisphenol. It may be at least one compound having an epoxy group such as A type acrylate, bisphenol S type acrylate, cresol novolac type epoxy acrylate.

그 함량은 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.1~80중량부인 것이 패턴형성 후 내열성, 내화학성, 접착성 개선에 있어서 바람직하다. The content is preferably 0.1 to 80 parts by weight based on 100 parts by weight of the compound represented by Formula 1 in improving heat resistance, chemical resistance, and adhesion after pattern formation.

(4) 광중합개시제 또는 광증감제(4) photopolymerization initiator or photosensitizer

광중합개시제 혹은 광증감제는 옥심에스테르계의 화합물인 1-[9-에틸-6-(2-메틸벤조일)-9H-카바졸-3-일]-1-(O-아세틸옥심)(1-[9-ethyl-6-(2-methybenzoyl)-9H-carbazol-3-yl]-1-(O-acetyloxime)), 1,2-옥탄디온-1[(4-페닐티오)페닐]-2-벤조일-옥심( 1,2-octanedione-1[(4-phenylthio)phenyl]-2-benzoyl-oxime)과 티옥산톤, 2,4-디에틸 티옥산톤, 티옥산톤-4-술폰산, 벤조페논, 4,4'-비스(디에틸아미노)벤조페논, 아세토페논, p-디메틸아미노아세토페논, 디메톡시아세톡시벤조페논, 2,2'-디메톡시-2-페틸아세토페논, p-메톡시아세토페논, 2-메틸[4-(메틸티오)페닐]-2-모르폴리노-1-프로파논, 2-벤질-2-디에틸아미노-1-(4-모르폴리노페닐)-부탄-1-온, 2-히드록시-2-메틸-1-페닐프로판-1-온, 4-(2-히드록시에톡시)페닐-(2-히드록시-2-프로필)케톤, 1-히드록시시클로헥실페닐케톤 등의 케톤류; 안트라퀴논, 1,4-나프토퀴논 등의 퀴논류; 1,3,5-트리스(트리클로로메틸)-s-트리아진, 1,3-비스(트리클로로메 틸)-5-(2-클로로페닐)-s-트리아진, 1,3-비스(트리클로로페닐)-s-트리아진, 페나실 클로라이드, 트리브로모메틸 페닐술폰, 트리스(트리클로로메틸)-s-트리아진 등의 할로겐 화합물; 디-t-부틸 퍼옥사이드 등의 과산화물; 2,4,6-트리메틸 벤조일 디페닐 포스핀 옥사이드 등의 아실 포스핀 옥사이드류 중에서 선택된 것일 수 있다. The photoinitiator or the photosensitizer is 1- [9-ethyl-6- (2-methylbenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime) which is an oxime ester compound. [9-ethyl-6- (2-methybenzoyl) -9H-carbazol-3-yl] -1- (O-acetyloxime)), 1,2-octanedione-1 [(4-phenylthio) phenyl] -2 -Benzoyl-oxime (1,2-octanedione-1 [(4-phenylthio) phenyl] -2-benzoyl-oxime) with thioxanthone, 2,4-diethyl thioxanthone, thioxanthone-4-sulfonic acid, Benzophenone, 4,4'-bis (diethylamino) benzophenone, acetophenone, p-dimethylaminoacetophenone, dimethoxyacetoxybenzophenone, 2,2'-dimethoxy-2-petylacetophenone, p- Methoxyacetophenone, 2-methyl [4- (methylthio) phenyl] -2-morpholino-1-propane, 2-benzyl-2-diethylamino-1- (4-morpholinophenyl)- Butan-1-one, 2-hydroxy-2-methyl-1-phenylpropan-1-one, 4- (2-hydroxyethoxy) phenyl- (2-hydroxy-2-propyl) ketone, 1- Ketones such as hydroxycyclohexylphenyl ketone; Quinones such as anthraquinone and 1,4-naphthoquinone; 1,3,5-tris (trichloromethyl) -s-triazine, 1,3-bis (trichloromethyl) -5- (2-chlorophenyl) -s-triazine, 1,3-bis (trichloro Halogen compounds such as rophenyl) -s-triazine, phenacyl chloride, tribromomethyl phenylsulfone and tris (trichloromethyl) -s-triazine; Peroxides such as di-t-butyl peroxide; It may be selected from acyl phosphine oxides, such as 2,4,6-trimethyl benzoyl diphenyl phosphine oxide.

이와 같은 광중합개시제 또는 광증감제는 상기 화학식 1로 표시되는 화합물 100중량부에 대해 0.01~20중량부로 포함되는 것이 바람직하다. Such a photopolymerization initiator or a photosensitizer is preferably included in 0.01 to 20 parts by weight based on 100 parts by weight of the compound represented by the formula (1).

(5) 블랙안료(5) Black Pigment

블랙안료로는 카본블랙, 티탄블랙, 아닐린블랙, 퍼릴렌 블랙, 티탄산 스트론튬, 산화 크롬, 세리아 등의 각종 무기산화물 안료를 사용할 수 있다. 바람직하게 카본블랙을 사용하며, 예를 들어 일본 Mikuni Color사의 CF Black EX-3276, CF Black EX-3277 시리즈, 일본 미쯔비시사의 다이어그램 블록 Ⅱ, 다이어그램 블록 N339, 다이어그램 블록 SH, 다이어그램 블록 H, 다이어그램 블록 LH, 다이어그램 블록 HA, 다이어그램 블록 SF 등을 사용할 수 있다. 또한 미국 Cabot 사에 의해 시판되는 Regal 250T, Regal 99R, Elftex 12, 미국 콜롬비아 케미컬스사의 Raven 880 Ultra, Raven 860 Ultra, Raven 850 Ultra, Raven 790 Ultra, Raven 760 Ultra, Raven 520 Ultra, Raven 500 Ultra 등을 사용할 수 있다. As the black pigment, various inorganic oxide pigments such as carbon black, titanium black, aniline black, perylene black, strontium titanate, chromium oxide, and ceria can be used. Carbon black is preferably used, for example, CF Black EX-3276, CF Black EX-3277 series from Mikuni Color Japan, Diagram Block II, Diagram Block N339, Diagram Block SH, Diagram Block H, Diagram Block LH from Mitsubishi Japan. , Diagram block HA, diagram block SF, and the like can be used. Regal 250T, Regal 99R, Elftex 12, Raven 880 Ultra, Raven 860 Ultra, Raven 850 Ultra, Raven 790 Ultra, Raven 760 Ultra, Raven 520 Ultra, Raven 500 Ultra, etc. Can be used.

상기 블랙안료의 입자크기는 50 내지 150㎚로 조절하는 것이 좋으며, 보다 바람직하게는 80 내지 100㎚로 조절하는 것이 좋은데, 스핀타입 및 스핀리스(spinless) 타입 코팅시 유동성을 부여하고, 프리베이크 후의 표면잔사 및 돌기 방지에 효과적이며, 광학밀도 및 기판 접착력에 효과적이기 때문이다. It is preferable to adjust the particle size of the black pigment to 50 to 150nm, more preferably to 80 to 100nm, which gives fluidity during spin type and spinless type coating, and after prebaking This is because it is effective for preventing surface residues and protrusions, and effective for optical density and substrate adhesion.

상기 블랙안료는 총 조성물에 1~90중량%에 해당하는 양을 사용한다.The black pigment is used in an amount corresponding to 1 to 90% by weight of the total composition.

(6) 용매(6) solvent

용매는 프로필렌글리콜메틸에테르아세테이트(PGMEA), 프로필렌글리콜에틸에테르아세테이트, 프로필렌글리콜메틸에테르, 프로필렌글리콜프로필에테르, 메틸셀로솔브아세테이트, 에틸셀로솔브아세테이트, 디에틸글리콜메틸아세테이트, 에틸에톡시프로피오네이트, 메틸에톡시프로피오네이트, 뷰틸아세테이트, 에틸아세테이트, 시클로헥사논, 아세톤, 메틸이소부틸케톤, 디메틸포름아미드, N,N`-디메틸아세트아미드, N-메틸피롤리디논, 디프로필렌글리콜메틸에테르, 톨루엔, 메틸셀로솔브 및 에틸셀로솔브 중에서 선택하여 사용할 수 있다. The solvent is propylene glycol methyl ether acetate (PGMEA), propylene glycol ethyl ether acetate, propylene glycol methyl ether, propylene glycol propyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, diethyl glycol methyl acetate, ethyl ethoxy propio Nate, methylethoxy propionate, butyl acetate, ethyl acetate, cyclohexanone, acetone, methyl isobutyl ketone, dimethylformamide, N, N`-dimethylacetamide, N-methylpyrrolidinone, dipropylene glycol methyl It can be selected from ether, toluene, methyl cellosolve and ethyl cellosolve.

(7) 첨가제(7) additive

본 발명에 따른 수지 블랙 매트릭스용 감광성 수지 조성물은 필요에 따라 첨가제를 더 포함할 수 있는데, 첨가제의 일예로는 블랙 매트릭스와 코팅기판과의 밀착력을 향상시켜주는 실란계 커플링제, 코팅된 표면의 접촉각의 개선, 잔사개선등의 특성을 향상시키기 위한 계면활성제 등을 들 수 있다. The photosensitive resin composition for the resin black matrix according to the present invention may further include an additive as necessary. Examples of the additive include a silane coupling agent that improves adhesion between the black matrix and the coating substrate, and the contact angle of the coated surface. Surfactant for improving the characteristics, such as the improvement and residue improvement, etc. are mentioned.

이와 같은 조성을 갖는 감광성 수지 조성물을 분산 제조하여 얻어지는 수지 블랙 매트릭스는 점도가 1 내지 5cps인 것이 효과적이다. 이는 스핀타입 또는 스핀 리스(spinless) 타입의 코팅에 대하여 다양한 제품 그레이드를 제공하고, 코팅 후의 박막 내의 잔사 및 돌기를 방지할 뿐 아니라 박막의 두께를 다양하게 조절하는 데 보다 유리하기 때문이다. It is effective that the resin black matrix obtained by carrying out dispersion preparation of the photosensitive resin composition which has such a composition is 1-5 cps. This is because it provides various product grades for spin type or spinless type coatings, and is more advantageous in controlling the thickness of the thin film as well as preventing residues and projections in the thin film after coating.

또한, 이와 같은 감광성 수지 조성물을 분산제조하여 얻어지는 수지 블랙매트릭스를 코팅한 후 노광 및 현상을 거쳐 얻어진 패턴은 광학밀도가 단위 두께(㎛)당 3.0~6.0을 만족한다. Moreover, the optical density of 3.0-6.0 per unit thickness (micrometer) of the pattern obtained through coating and exposing and developing the resin black matrix obtained by disperse | distributing such photosensitive resin composition is satisfy | filled.

이하, 본 발명을 실시예를 통하여 보다 상세히 설명하나, 본 발명의 범위가 하기 실시예로 한정되는 것은 아니다. Hereinafter, the present invention will be described in more detail with reference to Examples, but the scope of the present invention is not limited to the following Examples.

<합성예 1> 화학식 1로 표시되는 화합물의 제조Synthesis Example 1 Preparation of Compound Represented by Chemical Formula 1

1L 사구 플라스크에, 용매인 프로필렌글리콜 메틸에테르아세테이트(PGMEA)에 비스페놀 플루오렌형 에폭시화합물(화학식 2) 232g과 아크릴산(화학식 3) 72g을 혼합하고, 트리에틸아민 4.56g과 하이드로퀴논 100mg을 넣은 후 온도 100℃로 승온하고 유지하면서 반응시킨다. 이때 질소는 10mL/min으로 조절하였다. 매 시간 산가를 측정하여 산가가 3.0mgKOH/g 이하가 될 때까지 반응을 계속하여 아크릴산을 포함하는 비스페놀 플루오렌형 화합물(화학식 4)를 얻었다.To a 1 L four-necked flask, 232 g of a bisphenol fluorene type epoxy compound (Formula 2) and 72 g of acrylic acid (Formula 3) were mixed with propylene glycol methyl ether acetate (PGMEA) as a solvent, and 4.56 g of triethylamine and 100 mg of hydroquinone were added thereto. The reaction is carried out while the temperature is raised to 100 ° C and maintained. At this time, nitrogen was adjusted to 10mL / min. The acid value was measured every hour, and reaction was continued until the acid value became 3.0 mgKOH / g or less, and the bisphenol fluorene type compound (formula 4) containing acrylic acid was obtained.

다음으로 위에서 반응시켜 얻은 화합물(화학식 4)에 0.05mol에 산무수물로서 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-tetrahydrophtahlic anhydride)을 0.05mol 첨가하여 온도 120℃까지 서서히 승온한다. 승온 후 120℃ 유지하면서 4시간 반응시킨 후 다관능기를 만들기 위해 에폭시 아크릴레이트(화학식 5)를 0.025mol 첨가하여 온도 120℃에서 4시간 반응시켜 화학식 6으로 표시되는 다관능기 수지화합물을 얻었다.Next, 0.05 mol of cis-1,2,3,6-tetrahydrophthalic anhydride (cis-1,2,3,6-tetrahydrophtahlic anhydride) is added to 0.05 mol of the compound obtained by the above reaction (Formula 4) as an acid anhydride. The temperature is gradually raised to 120 ° C. After the temperature was raised to 120 ° C. and reacted for 4 hours, 0.025 mol of epoxy acrylate (Formula 5) was added to make a multi-functional group, followed by reaction at 120 ° C. for 4 hours to obtain a polyfunctional resin compound represented by Chemical Formula 6.

Figure 112007090258533-PAT00007
Figure 112007090258533-PAT00007

<합성예 2> Synthesis Example 2

상기 실시예 1과 동일한 방법으로 화학식 4로 표시되는 화합물을 제조한 후, 산무수물로서 시스-1,2,3,6-테트라하이드로프탈산 무수물, 산 2무수물로서 바이페닐 테트라카복실산 이무수물을 90:10몰비로 사용하여 화학식 7로 표시되는 화합물을 얻었다.After preparing the compound represented by the formula (4) in the same manner as in Example 1, biphenyl tetracarboxylic dianhydride 90 as cis-1,2,3,6-tetrahydrophthalic anhydride, acid 2 anhydride as an acid anhydride: It was used in a 10 molar ratio to obtain a compound represented by the formula (7).

Figure 112007090258533-PAT00008
Figure 112007090258533-PAT00008

상기 식에서, m:n은 90/10몰비이다.Wherein m: n is 90/10 molar ratio.

<합성예 3> Synthesis Example 3

상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 10:90몰비로 사용하여 상기 화학식 7에 있어서 m:n이 10/90인 화합물을 얻었다.The compound was prepared in the same manner as in Synthesis example 2, except that an acid anhydride and an acid anhydride were used in a 10:90 molar ratio to obtain a compound having m: n of 10/90 in Chemical Formula 7.

<합성예 4> Synthesis Example 4

상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 70:30몰비로 사용하여 상기 화학식 7에 있어서 m:n이 70/30인 화합물을 얻었다.The compound was prepared in the same manner as in Synthesis example 2, except that an acid anhydride and an acid anhydride were used in a 70:30 molar ratio to obtain a compound having m: n of 70/30 in Chemical Formula 7.

<합성예 5> Synthesis Example 5

상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물과 산2무수물을 50:50몰비로 사용하여 상기 화학식 7에 있어서 m:n이 50/50인 화합물을 얻었다.Prepared in the same manner as in Synthesis Example 2 except using an acid anhydride and an acid anhydride in a 50:50 molar ratio to obtain a compound having m: n in the formula (7) 50/50.

<합성예 6> Synthesis Example 6

상기 합성예 2와 동일한 방법으로 제조하되, 다만 산무수물을 사용하지 않고 산2무수물만을 사용하여 상기 화학식 7에 있어서 m:n이 0/100인 화합물을 얻었다.The compound was prepared in the same manner as in Synthesis example 2, except using acid 2 anhydride instead of acid anhydride to obtain a compound having m: n of 0/100 in Formula 7.

<비교합성예 1>Comparative Example 1

500㎖의 4-주둥이 플라스크에, 비스페놀플루오렌형 에폭시수지 231g(에폭시 당량 231)과, 트리에틸벤질암모늄클로라이드 450mg, 2,6-디이소부틸페놀 100mg, 및 아크릴산 72.0g을 넣어 혼합하고, 공기를 매분 25㎖의 속도로 불어넣으면서 90~100℃로 가열하여 용해시켰다. 이 용액은 가열됨에 따라 점차 흐린 백색이었으나, 그대로 서서히 온도를 올려 120℃까지 가열하여 완전히 용해시켰다. 이때, 용액은 점차 투명하고 끈적끈적해졌고, 이를 계속해서 교반하였다. 간격을 두고 산가(acid value)를 측정하여 산가가 2.0mgKOH/g 미만이 될때까지 계속 가열하며 교반하였다. 산가가 목표(산가 0.8)에 이르기까지 8시간이 소요되었다.231 g (epoxy equivalent 231) of bisphenol fluorene type epoxy resin, 450 mg of triethylbenzyl ammonium chloride, 100 mg of 2,6- diisobutyl phenol, and 72.0 g of acrylic acid were mixed, and air was mixed into a 500 ml four-necked flask. Was melted by heating to 90-100 ° C. while blowing at a rate of 25 ml per minute. The solution gradually became pale white as it was heated, but the temperature was gradually raised to 120 ° C. and completely dissolved. At this time, the solution gradually became clear and sticky, and continued stirring. The acid value was measured at intervals and the stirring was continued until the acid value was less than 2.0 mgKOH / g. It took eight hours for the acid value to reach its target (acid value 0.8).

그후, 혼합물을 실온까지 냉각시켜, 무색투명한 고체의 비스페놀플루오렌형 에폭시아크릴레이트를 얻었다.Thereafter, the mixture was cooled to room temperature to obtain a colorless transparent solid bisphenol fluorene type epoxy acrylate.

이렇게 하여 얻게 된 비스페놀플루오렌형 에폭시아크릴레이트 303g을 셀로솔브아세테이트 2kg 중에 용해시켜 용액으로 한 후, 여기에 1,2,3,6-테트라히드로프탈산 무수물과, 비페닐테트라카르복실산 2무수물 및 테트라에틸암모늄브로마이드 1g을 첨가하여, 서서히 가열시켜 110~115℃로 2시간 반응시켜, 화학식 8로 표시되는 중합성 불포화 화합물을 얻었다. 이때, 1,2,3,6-테트라히드로프탈산 무수물과 비페닐테트라카르복실산 2무수물의 몰비는 100/0으로 하였다. 303 g of the bisphenol fluorene type epoxy acrylate thus obtained was dissolved in 2 kg of cellosolve acetate to make a solution, and then 1,2,3,6-tetrahydrophthalic anhydride, biphenyltetracarboxylic dianhydride and Tetraethylammonium bromide 1g was added, it heated gradually, it was made to react at 110-115 degreeC for 2 hours, and the polymeric unsaturated compound represented by General formula (8) was obtained. At this time, the molar ratio of 1,2,3,6-tetrahydrophthalic anhydride and biphenyl tetracarboxylic dianhydride was 100/0.

Figure 112007090258533-PAT00009
Figure 112007090258533-PAT00009

상기 식에 있어서, m:n의 비율은 100/0인 화합물이다.In the above formula, the ratio of m: n is a compound of 100/0.

<비교합성예 2>Comparative Example 2

비교합성예 1의 화학식 8에 있어서, m:n의 비율이 90/10인 화합물을 제조하였다.In Chemical Formula 8 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 90/10 was prepared.

<비교합성예 3>Comparative Example 3

비교합성예 1의 화학식 8에 있어서, m:n의 비율이 10/90인 화합물을 제조하였다.In Chemical Formula 8 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 10/90 was prepared.

<비교합성예 4>Comparative Example 4

비교합성예 1의 화학식 8에 있어서, m:n의 비율이 70/30인 화합물을 제조하였다.In Chemical Formula 8 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 70/30 was prepared.

<비교합성예 5>Comparative Example 5

비교합성예 1의 화학식 8에 있어서, m:n의 비율이 50/50인 화합물을 제조하였다.In Chemical Formula 8 of Comparative Synthesis Example 1, a compound having a ratio of m: n of 50/50 was prepared.

<비교합성예 6>Comparative Example 6

비교예 1의 화학식 8에 있어서, m:n의 비율이 0/100인 화합물을 제조하였다.In Chemical Formula 8 of Comparative Example 1, a compound having a ratio of m: n of 0/100 was prepared.

<실시예 1~6 및 비교예 1~6><Examples 1-6 and Comparative Examples 1-6>

상기 합성예 1~6 및 비교합성예 1~6에 따라 얻은 각각의 수지를 포함하여, 다음 표 1과 같은 조성으로 감광성 수지 조성물을 제조하였다. Including each of the resins obtained according to Synthesis Examples 1 to 6 and Comparative Synthesis Examples 1 to 6, a photosensitive resin composition was prepared in the composition shown in Table 1 below.

수지 성분Resin component 다관능성 모노머Polyfunctional monomer 실란계 에폭시화합물Silane Epoxy Compound 광개시제Photoinitiator 안료성분Pigment Ingredients 용매menstruum 첨가제additive 점도 (cps)Viscosity (cps) 실 시 예Example 1One 합성예1Synthesis Example 1 DPHADPHA 비스페놀 A형Bisphenol A type OXE-02 OXE-02 카본블랙Carbon black PGMEAPGMEA GPTMSGPTMS 3.53.5 22 합성예2Synthesis Example 2 3.53.5 33 합성예3Synthesis Example 3 3.63.6 44 합성예4Synthesis Example 4 3.53.5 55 합성예5Synthesis Example 5 3.63.6 66 합성예6Synthesis Example 6 3.73.7 비 교 예Comparative Example 1One 비교 합성예1Comparative Synthesis Example 1 3.63.6 22 비교 합성예2Comparative Synthesis Example 2 3.63.6 33 비교 합성예3Comparative Synthesis Example 3 3.73.7 44 비교 합성예4Comparative Synthesis Example 4 3.83.8 55 비교 합성예5Comparative Synthesis Example 5 3.73.7 66 비교 합성예6Comparative Synthesis Example 6 3.83.8 (주) 수지성분: 전체 조성 중 20중량% DPHA:디펜타에리쓰리톨 헥사아크릴레이트, 수지성분에 대해 10중량부 실란계 에폭시 화합물: 수지성분에 대해 5중량부 광개시제: 수지성분에 대해 10중량부 카본블랙: 입자크기 90nm내지 110nm인 것으로, 전체 수지 조성 중 10중량%, PGMEA: 프로필렌글리콜메틸에테르아세테이트 GPTMS: 글리시독시 프로필트리 메톡시 실란(신에츠사), 전체 수지 조성 중 600ppmResin component: 20 weight% DPHA: dipentaerythritol hexaacrylate in the total composition, 10 parts by weight based on the resin component Silane-based epoxy compound: 5 parts by weight based on the resin component Photoinitiator: 10 weight based on the resin component Sub carbon black: Particle size 90 nm to 110 nm, 10% by weight of the total resin composition, PGMEA: Propylene glycol methyl ether acetate GPTMS: Glycidoxy propyltrimethoxy silane (Shin-Etsu Co., Ltd.), 600 ppm of the total resin composition

상기 실시예 및 비교예에 의하여 제조된 감광성 수지 조성물에 대하여 내열성, 코팅균일도, 현상패턴 안정성, 광학밀도, 접착강도, 감도 등을 다음과 같은 방법으로 측정하였으며, 그 결과는 다음 표 2와 같다. The heat resistance, coating uniformity, development pattern stability, optical density, adhesive strength, sensitivity, and the like of the photosensitive resin compositions prepared according to the Examples and Comparative Examples were measured by the following methods, and the results are shown in Table 2 below.

(1) 내열성 (1) heat resistance

내열성은 수지 블랙 매트릭스를 유리기판에 코팅-프리베이크-노광-현상공정(노광량100mJ/㎠)을 수행한 후 포스트베이크 공정 전후의 패턴의 모양을 비교하여 평가하였다. 포스트베이크는 컨벡션 오븐에서 250℃로 40분 동안 수행하였다. 패턴의 모양과 두께의 변화는 광학현미경과 α-Step으로 확인하였다.  The heat resistance was evaluated by performing a coating-prebaking-exposure-development process (exposure amount 100mJ / cm 2) on the glass substrate of the resin black matrix and comparing the shapes of the patterns before and after the postbaking process. Postbaking was performed for 40 minutes at 250 ° C. in a convection oven. Changes in the shape and thickness of the pattern were confirmed by optical microscopy and α-Step.

(2) 코팅균일도 (2) Coating uniformity

코팅균일도는 수지 블랙 매트릭스를 유리기판에 코팅-프리베이크-노광-현상-포스트베이크 한 후 기판의 임의의 10군데를 선정하여 두께를 측정하여 아래의 식으로 계산하여 평가하였다.The coating uniformity was evaluated by coating the resin black matrix on a glass substrate by coating-prebaking-exposure-developing-postbaking, and then selecting any ten places of the substrate and measuring the thickness thereof.

(Tmax-Tmin)/(Tmax+Tmin) X 100 (T max -T min ) / (T max + T min ) X 100

여기서, Tmax 는 최대 두께, Tmin는 최소 두께이다. Where T max is the maximum thickness and T min is the minimum thickness.

(3) 패턴 안정성(3) pattern stability

패턴 안정성은 패턴이 형성된 유리판을 수직으로 절단 후 단면을 SEM으로 관찰하여 막이 감소된 정도를 확인하여 평가하였다. The pattern stability was evaluated by vertically cutting the glass plate on which the pattern was formed and observing the cross section by SEM to confirm the degree of decrease of the film.

(4) 광학밀도(4) optical density

광학밀도는 수지 블랙 매트릭스를 약 1.0㎛로 코팅한 후 노광-현상공정으로 패턴을 형성한 다음 시마즈 전자의 PMT장비를 이용하여 측정하였다.Optical density was measured by coating a resin black matrix at about 1.0 μm, forming a pattern by an exposure-developing process, and then using Shimadzu Electronics PMT equipment.

(5) 접착강도(5) adhesive strength

접착강도는 수지 블랙 매트릭스를 유리판에 코팅 후 ASTM D3359 (Cross Cutting Tape Test) 실험방법으로 그 결과를 측정하였다.Adhesive strength was measured by the ASTM D3359 (Cross Cutting Tape Test) test method after coating the resin black matrix on the glass plate.

(6) 감도(6) sensitivity

감도는 수지 블랙 매트릭스을 코팅한 유리판에 노광량을 달리하여 노광 패턴을 형성 후 현상-포스트베이크 공정을 거친 후 패턴이 형성되는 정도를 판별하여 그 적정 노광량을 결정하였다.The sensitivity was determined by varying the exposure amount on the glass plate coated with the resin black matrix to form an exposure pattern, followed by the development-post bake process, and then determining the degree of pattern formation to determine the appropriate exposure amount.

내열성Heat resistance 코팅균일도 (%)Coating Uniformity (%) 패턴안정성Pattern stability 광학밀도(/㎛)Optical density (/ ㎛) 접착 강도Adhesive strength 감도 (mJ/㎠)Sensitivity (mJ / ㎠) 실시예 1Example 1 양호Good 2.21%2.21% 양호Good 4.614.61 5B5B 3030 실시예 2Example 2 양호Good 2.12%2.12% 양호Good 4.504.50 5B5B 3030 실시예 3Example 3 양호Good 2.20%2.20% 양호Good 4.554.55 5B5B 3030 실시예 4Example 4 양호Good 2.30%2.30% 양호Good 4.454.45 5B5B 3030 실시예 5Example 5 양호Good 2.15%2.15% 양호Good 4.464.46 5B5B 3030 실시예 6Example 6 양호Good 2.30%2.30% 양호Good 4.524.52 5B5B 3030 비교예 1Comparative Example 1 미흡Inadequate 3.58%3.58% 불량Bad 4.514.51 4B4B 4040 비교예 2Comparative Example 2 미흡Inadequate 3.96%3.96% 불량Bad 4.534.53 3B3B 4040 비교예 3Comparative Example 3 양호Good 3.78%3.78% 양호Good 4.494.49 4B4B 4040 비교예 4Comparative Example 4 미흡Inadequate 3.91%3.91% 불량Bad 4.524.52 4B4B 5050 비교예 5Comparative Example 5 미흡Inadequate 4.35%4.35% 양호Good 4.474.47 3B3B 4040 비교예 6Comparative Example 6 양호Good 3.81%3.81% 불량Bad 4.514.51 4B4B 5050

상기 표 2의 결과로부터, 실시예 1 내지 6의 경우는 비교예 1 내지 6에 비하여 감도가 특히 개선되었고 현상마진의 개선으로 코팅균일도 또한 향상됨을 알 수 있다. 또한, 패턴안정성, 접착강도 등에 있어서도 우수한 결과를 보였다. From the results of Table 2, in the case of Examples 1 to 6 it can be seen that the sensitivity is particularly improved compared to Comparative Examples 1 to 6 and the coating uniformity is also improved by the improvement of the development margin. In addition, excellent results were found in pattern stability, adhesive strength, and the like.

이는 비교예 1 내지 6에서 사용된 바인더 수지에 비하여 관능기가 증가된 수지를 사용한 결과라 판단된다. This is judged to be the result of using a resin having increased functional groups compared to the binder resins used in Comparative Examples 1 to 6.

Claims (12)

다음 화학식 1로 표시되는 주쇄에 아크릴레이트 다관능기를 갖는 화합물을 포함하는 수지 블랙매트릭스용 감광성 수지 조성물.Next, the photosensitive resin composition for resin black matrices containing a compound having an acrylate polyfunctional group in the main chain represented by the formula (1). 화학식 1Formula 1
Figure 112007090258533-PAT00010
Figure 112007090258533-PAT00010
상기 식에서, R1 및 R2는 서로 같거나 다른 것으로, 수소원자 또는 메틸기이고, Y은 산무수물의 잔기이고, Z는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.Wherein R1 and R2 are the same as or different from each other, and are a hydrogen atom or a methyl group, Y is a residue of an acid anhydride, Z represents a residue of an acid anhydride, and m: n is a molar ratio of 100: 0 to 0: 100. Ratio.
(A) 다음 화학식 1로 표시되는 주쇄에 아크릴레이트 다관능기를 갖는 화합물 100중량부;(A) 100 parts by weight of a compound having an acrylate polyfunctional group in the main chain represented by the following formula (1); (B) 다관능성 모노머 0.1~99중량부;(B) 0.1 to 99 parts by weight of a multifunctional monomer; (C) 에폭시기를 함유하는 실리콘계 화합물 0.1~80중량부;(C) 0.1 to 80 parts by weight of a silicone compound containing an epoxy group; (D) 광중합 개시제 혹은 광증감제 0.01~20중량부;(D) 0.01 to 20 parts by weight of the photopolymerization initiator or the photosensitizer; (E) 안료성분; 및(E) pigment component; And (F) 용매를 포함하는 수지 블랙 매트릭스용 감광성 수지 조성물.(F) Photosensitive resin composition for resin black matrices containing a solvent. 화학식 1Formula 1
Figure 112007090258533-PAT00011
Figure 112007090258533-PAT00011
상기 식에서, R1 및 R2는 서로 같거나 다른 것으로, 수소원자 또는 메틸기이고, Y은 산무수물의 잔기이고, Z는 산2무수물의 잔기를 나타내고, m:n은 몰비로 100:0~0:100의 비율이다.Wherein R1 and R2 are the same as or different from each other, and are a hydrogen atom or a methyl group, Y is a residue of an acid anhydride, Z represents a residue of an acid anhydride, and m: n is a molar ratio of 100: 0 to 0: 100. Ratio.
제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 R1가 모두 수소이고, Y는 말레인산 무수물(Maleic anhydride), 숙신산 무수물(Succinic anhydride), 시스-1,2,3,6-테트라하이드로프탈산 무수물(cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-테트라하이드로프탈산 무수물(3,4,5,6-Tetrahydrophthalic Anhydride), 프탈산 무수물(Phthalic Anhydride), 이타콘산 무수물(Itaconic anhydride), 1,2,4-벤젠트리카복실산 무수물(1,2,4-Benzenetricarboxylic Anhydride), 메틸-테트라하이드로프탈산 무수물(Methyl-Tetrahydrophthalic Anhydride), 시트라콘산 무수물(Citraconic Anhydride), 2,3-디메틸말레인산 무수물(2,3-Dimethylmaleic Anhydride), 1-사이클로펜텐-1,2,-디카복실산 무수물(1-Cyclopentene-1,2-Dicarboxylic anhydride), 시스(5-노보넨-엔도-2,3-디카복실산 무수물(cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) 및 1,8-나프탄산 무수물(1,8-Naphthalic Anhydride) 중에서 선택된 산무수물 중에서 선택된 산무수물의 잔기인 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The compound represented by the formula (1) according to claim 1 or 2, wherein R1 is all hydrogen, Y is maleic anhydride, Succinic anhydride, cis-1,2,3,6-tetra Hydrophthalic anhydride (cis-1,2,3,6-Tetrahydrophthalic Anhydride), 3,4,5,6-tetrahydrophthalic anhydride (3,4,5,6-Tetrahydrophthalic Anhydride), phthalic anhydride (Phthalic Anhydride) Itaconic anhydride, 1,2,4-Benzenetricarboxylic Anhydride, Methyl-Tetrahydrophthalic Anhydride, Citraconic Anhydride , 2,3-dimethylmaleic anhydride, 1-cyclopentene-1,2, -dicarboxylic anhydride, 1-Cyclopentene-1,2-Dicarboxylic anhydride, cis (5-norbornene- Endo-2,3-dicarboxylic anhydride (cis-5-Norbonene-endo-2,3-Dicarboxylic Anhydride) and 1,8-naphtanic anhydride (1,8-Naphthalic An It is a residue of an acid anhydride selected from the acid anhydride selected from hydride). Photosensitive resin composition for resin black matrices characterized by the above-mentioned. 제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 R1는 모두 수소이고, Z는 1,2,4,5-벤젠테트라카복실산 이무수물(1,2,4,5-Bezenetetracarboxylic Dianhydride), 4,4'-바이프탈산 이무수물(4,4'-Biphthalic Dianhydride), 3,3',4,4'-벤조페논테트라카복실산 이무수물(3,3',4,4'- Benzophenonetetracarboxylic Dianhydride), 피로멜리트산 이무수물(Pyromelitic Dianhydride), 1,4,5,8-나프탈렌테트라카복실산 이무수물(1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-테트라카복실산 무수물(1,2,4,5-Tetracarboxylic Anhydide), 메틸노보넨-2,3-디카복실산 무수물(Methylnorbonene-2,3-Dicarboxylic Anhydride), 4,4'-[2,2,2-트리플로로-1-(트리플로로메틸)에틸리덴]디프탈산 무수물(4,4'-[2,2,2-Trifluoro-1-(Trifluoromethyl)Ethylidene]Diphthalic Anhydride), 4,4'-옥시디프탈산 무수물(4,4`-Oxydiphthalic Anhydride) 및 에틸렌글리콜 비스(안하이드로 트리멜리테이트)(Ethylene Glycol Bis (Anhydro Trimelitate)) 중에서 선택된 산2무수물의 잔기인 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The compound represented by the formula (1) according to claim 1 or 2, wherein R1 is all hydrogen, Z is 1,2,4,5-benzenetetracarboxylic dianhydride (1,2,4,5-Bezenetetracarboxylic Dianhydride) , 4,4'-Biphthalic Dianhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride (3,3', 4,4'-Benzophenonetetracarboxylic Dianhydride) , Pyromellitic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride (1,4,5,8-Naphthalenetetracarboxylic Dianhydride), 1,2,4,5-tetracarboxylic anhydride (1 , 2,4,5-Tetracarboxylic Anhydide, Methylnorbonene-2,3-Dicarboxylic Anhydride, 4,4 '-[2,2,2-Trifluoro-1 -(Trifluoromethyl) ethylidene] diphthalic anhydride (4,4 '-[2,2,2-Trifluoro-1- (Trifluoromethyl) Ethylidene] Diphthalic Anhydride), 4,4'-oxydiphthalic anhydride (4 , 4`-Oxydiphthalic Anhydride) and ethylene glycol bis (anhydro trimellite) Agent) (Ethylene Glycol Bis (Anhydro Trimelitate)) resin, characterized in that the residue of the acid dianhydride selected from the photosensitive resin composition for a black matrix. 제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 산무수물과 산2무수물의 몰비인 m:n의 비율이 100/0~50/50의 범위에 있는 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The resin black matrix according to claim 1 or 2, wherein the compound represented by the formula (1) has a ratio of m: n, which is a molar ratio of acid anhydride and acid 2 anhydride, in a range of 100/0 to 50/50. Photosensitive resin composition for. 제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 산무수물과 산2무수물의 몰비인 m:n의 비율이 100/0~70/30의 범위에 있는 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The resin black matrix according to claim 1 or 2, wherein the compound represented by the formula (1) has a ratio of m: n, which is a molar ratio of acid anhydride and acid 2 anhydride, in the range of 100/0 to 70/30. Photosensitive resin composition for. 제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 산무수물과 산2무수물의 몰비인 m:n의 비율이 0/100~50/50의 범위에 있는 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The resin black matrix according to claim 1 or 2, wherein the compound represented by the formula (1) has a ratio of m: n, which is a molar ratio of acid anhydride and acid 2 anhydride, in a range of 0/100 to 50/50. Photosensitive resin composition for. 제 1 항 또는 제 2 항에 있어서, 화학식 1로 표시되는 화합물은 전체 수지 조성물 중 5~80중량%로 포함되는 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물.The photosensitive resin composition for a resin black matrix according to claim 1 or 2, wherein the compound represented by the formula (1) is contained in an amount of 5 to 80% by weight in the total resin composition. 제 2 항에 있어서, (E)안료성분은 입자크기 50~150nm인 카본블랙인 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물. The photosensitive resin composition for a resin black matrix according to claim 2, wherein the pigment component (E) is carbon black having a particle size of 50 to 150 nm. 제 2 항 또는 제 9 항에 있어서, (E)안료성분은 전체 수지 조성물 중 1~90중량%로 포함되는 것을 특징으로 하는 수지 블랙 매트릭스용 감광성 수지 조성물.10. The photosensitive resin composition for resin black matrix according to claim 2 or 9, wherein (E) the pigment component is contained at 1 to 90% by weight in the total resin composition. 제 1 항 또는 제 2 항의 조성물을 분산 제조하여 얻어지는 점도 1~5 cps의 범위에 있는 수지 블랙매트릭스.The resin black matrix which exists in the range of the viscosity of 1-5 cps obtained by carrying out dispersion preparation of the composition of Claim 1 or 2. 제 1 항 또는 제 2 항의 조성물을 분산 제조하여 코팅한 후 포토리소그라피에 의해 형성된 패턴에 있어서 단위 두께당(㎛) 광학밀도가 3.0~6.0인 수지 블랙매트릭스.A resin black matrix having an optical density of 3.0 to 6.0 per unit thickness in a pattern formed by photolithography after dispersion preparation and coating of the composition of claim 1 or 2.
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