KR20090050697A - Image sensor and method for manufacturing thereof - Google Patents

Image sensor and method for manufacturing thereof Download PDF

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Publication number
KR20090050697A
KR20090050697A KR1020070117287A KR20070117287A KR20090050697A KR 20090050697 A KR20090050697 A KR 20090050697A KR 1020070117287 A KR1020070117287 A KR 1020070117287A KR 20070117287 A KR20070117287 A KR 20070117287A KR 20090050697 A KR20090050697 A KR 20090050697A
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KR
South Korea
Prior art keywords
insulating layer
micro lens
forming
film
passivation layer
Prior art date
Application number
KR1020070117287A
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Korean (ko)
Inventor
한만길
Original Assignee
주식회사 동부하이텍
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Priority to KR1020070117287A priority Critical patent/KR20090050697A/en
Publication of KR20090050697A publication Critical patent/KR20090050697A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1462—Coatings
    • H01L27/14621—Colour filter arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14627—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14685—Process for coatings or optical elements

Abstract

An image sensor according to an embodiment includes a semiconductor substrate including unit pixels; An interlayer insulating film including metal wires disposed on the semiconductor substrate; A passivation layer disposed on the interlayer insulating film; A micro lens disposed on the passivation layer to correspond to the unit pixel; And a color filter disposed on the micro lens.

Image Sensor, Micro Lens, Color Filter

Description

Image sensor and method for manufacturing thereof

In an embodiment, an image sensor and a method of manufacturing the same are disclosed.

An image sensor is a semiconductor device that converts an optical image into an electrical signal, and is largely a charge coupled device (CCD) and a CMOS (Complementary Metal Oxide Silicon) image sensor. Sensor (CIS).

The CMOS image sensor implements an image by sequentially detecting an electrical signal of each unit pixel in a switching method of forming a photodiode and a MOS transistor in the unit pixel.

In order to increase the light sensitivity, efforts have been made to increase the fill factor of the light sensing region in the entire image sensor device. Microlenses may be formed on the color filter in order to change the path of light incident to an area other than the light sensing area and to collect the light sensing area in order to increase the light sensitivity.

In the method of forming an image sensor, a color filter, a planarization layer, and a microlens forming process are performed on a pixel array substrate including pixels.

The microlens proceeds to the photosensitive organic material in the order of exposure, development, and reflow to finally form a hemispherical shape.

When the microlens is formed using the photosensitive organic material, a merge phenomenon with an adjacent microlens may occur, thus making it difficult to implement a gapless microlens.

Since the photosensitive organic material is weak in physical properties, the microlenses are easily damaged by physical shocks in the package and bumps, and the photosensitive organic material is relatively viscous and may cause lens defects when particles are adsorbed. have.

The embodiment provides an image sensor and a method of manufacturing the same, which can simplify a process by forming a color filter on a microlens.

An image sensor according to an embodiment includes a semiconductor substrate including unit pixels; An interlayer insulating film including metal wires disposed on the semiconductor substrate; A passivation layer disposed on the interlayer insulating film; A micro lens disposed on the passivation layer to correspond to the unit pixel; And a color filter disposed on the micro lens.

In another aspect, a method of manufacturing an image sensor includes: forming unit pixels on a semiconductor substrate; Forming an interlayer insulating film including metal wires and pads on the semiconductor substrate; Forming a passivation layer on the interlayer insulating film; Forming a micro lens on the passivation layer to correspond to the unit pixel; And forming a color filter on the micro lens.

According to the image sensor and the manufacturing method thereof according to the embodiment, the micro lens is formed of an inorganic material, it is possible to prevent cracks due to pressure.

In addition, since the inorganic material constituting the microlens may be formed at a high temperature, it may have a uniform surface film with reduced roughness. Therefore, it is possible to shape the light sensitivity of the image sensor.

In addition, since a color filter is formed on the microlens, an additional process required after the color filter is unnecessary, thereby reducing process steps and costs.

An image sensor and a method of manufacturing the same according to an embodiment will be described in detail with reference to the accompanying drawings.

In the description of the embodiments, when described as being formed "on / over" of each layer, the on / over may be directly or through another layer ( indirectly) includes everything formed.

5 is a cross-sectional view illustrating an image sensor according to an embodiment.

Referring to FIG. 5, an interlayer insulating layer 130 including a metal wiring 140 is disposed on a semiconductor substrate 100 including a unit pixel 120.

The pad 141 is disposed on the interlayer insulating layer 130 on which the final metal wiring is formed. The metal wire 140 and the pad 141 may be formed of the same material.

The passivation layer 150 is disposed on the interlayer insulating layer 130 including the metal wiring 140. The passivation layer 150 is to protect the device including the unit pixel 120 and the metal wiring 140. The passivation layer 150 may be formed of any one of an oxide film, a nitride film, and an oxynitride film. For example, the passivation layer 150 may be formed of a USG film and may be formed to a thickness of 1000 ~ 5000Å.

The first insulating layer pattern 163 including the microlens 165 is disposed on the passivation layer 150. The first insulating layer pattern 163 may be formed to a thickness of 10 ~ 1000 Å may cover the surface of the passivation layer 150. The microlens 165 may be formed in a dome shape so as to correspond to the unit pixel 120 to condense light to the unit pixel 120.

The first insulating layer pattern 163 and the micro lens 165 may be formed of the same material. In particular, the first insulating layer pattern 163 and the micro lens 165 may be formed of an inorganic material. For example, the first insulating layer pattern 163 and the micro lens 165 may be formed of a nitride film.

Since the microlens 165 is formed of a nitride film, cracks of the microlens 165 may be prevented. In addition, since the nitride film forming the microlens 165 may be formed at a high temperature, the surface of the microlens 165 may be formed of a uniform film having a reduced roughness.

The color filter 170 is disposed on the micro lens 165. The color filter 170 is formed for each unit pixel 120 to separate colors from incident light. Each of the color filters 170 represents a different color, and is composed of three colors of red, green, and blue, and adjacent color filters 170 may overlap each other slightly to have a step. .

Since the color filter 170 is formed on the microlens 165, a separate planarization layer due to the step of the color filter is unnecessary. Therefore, there is an effect of integration and miniaturization of the image sensor.

11 is a cross-sectional view illustrating an image sensor according to a second embodiment. In the description of the second embodiment, the same reference numerals and the same names will be used for the same components as those of the above-described first embodiment.

Referring to FIG. 11, an interlayer insulating layer 130 including a metal wiring 140 is disposed on a semiconductor substrate 100 including a unit pixel 120.

The pad 141 is disposed on the interlayer insulating layer 130 on which the final metal wiring is formed. The metal wire 140 and the pad 141 may be formed of the same material.

The passivation layer 150 is disposed on the interlayer insulating layer 130 including the metal wiring 140. The passivation layer 150 is to protect the device including the unit pixel 120 and the metal wiring 140. The passivation layer 150 may be formed of any one of an oxide film, a nitride film, and an oxynitride film. For example, the passivation layer 150 may be formed of a USG film and may be formed to a thickness of 1000 ~ 5000Å.

The first insulating layer 160 is disposed on the passivation layer 150. The first insulating layer 160 may be formed of an inorganic material. For example, the first insulating layer 160 may be formed of a nitride film and may be formed to a thickness of 1000 ~ 5000Å.

The micro lens 255 is disposed on the first insulating layer 160. The micro lens 255 may be formed in a dome shape so as to correspond to the unit pixel 120 to condense light. The micro lens 255 may be formed of an inorganic material. For example, the micro lens 255 may be formed of a USG film.

Since the microlens 255 is formed of a USG film, cracks or the like of the microlens 255 may be prevented. In addition, since the USG film constituting the microlens 255 may be formed at a high temperature, the surface of the microlens 255 may be formed with a uniform film having a reduced roughness.

The color filter 170 is disposed on the micro lens 255. The color filter 170 is formed for each unit pixel 120 to separate colors from incident light. Each of the color filters 170 represents a different color, and is composed of three colors of red, green, and blue, and adjacent color filters 170 may overlap each other slightly to have a step. .

Since the color filter 170 is formed on the micro lens 165, a separate planarization layer is unnecessary. Therefore, there is an effect of integration and miniaturization of the image sensor.

1 to 5 are cross-sectional views illustrating a manufacturing process of the image sensor according to the first embodiment.

Referring to FIG. 1, a unit pixel 120 including a photodiode and a CMOS circuit is formed on a semiconductor substrate 100.

An isolation layer (not shown) defining an active region and a field region may be formed on the semiconductor substrate 100. The unit pixel formed in the active region includes a photodiode for receiving light and generating photocharges, and a CMOS circuit connected to the photodiode to convert the received photocharge to an electrical signal.

After the related devices including the unit pixel 120 are formed, the metal wiring 140 and the interlayer insulating layer 130 are formed on the semiconductor substrate 100.

The interlayer insulating layer 130 may be formed of a plurality of layers. For example, the interlayer insulating layer 130 may be formed of a nitride film or an oxide film.

The metal wiring 140 may be formed in plural through the interlayer insulating layer 130. The metal wire 140 is intentionally laid out so as not to block light incident on the photodiode. The metal wire 140 may be formed of a conductive material including a metal.

The pad 141 may also be formed when the metal wire 140 located at the top of the metal wire 140 is formed.

The passivation layer 150 is formed on the interlayer insulating layer 130. The passivation layer 150 may be formed of an insulating film to protect the device from moisture, scratches, and the like. The passivation layer 150 may be formed of any one of an oxide film, a nitride film, and an oxynitride film, or may have a structure in which one or more layers are stacked. For example, the passivation layer 150 may be formed of an Un-doped Silicate Glass (USG) film. Specifically, the passivation layer 150 may be formed at a temperature of 300 to 1000 ° C. using a CVD process and using SiH 4 and O 2 gases. The passivation layer 150 may be formed to a thickness of about 1000 ~ 5000Å.

The first insulating layer 160 is formed on the passivation layer 150. The first insulating layer 160 may be formed of an inorganic material including an oxide film or a nitride film. For example, the first insulating layer 160 may be formed of a nitride film. Specifically, the first insulating layer 160 may be deposited at a temperature of 300 to 1000 ° C. using a CVD process and using SiH 4 and NH 3 gases. The first insulating layer 160 may be formed to a thickness of 2000 ~ 5000Å. Since the first insulating layer 160 is deposited at a high temperature, the first insulating layer 160 may be formed to have a uniform film quality from which pinholes are removed.

Referring to FIG. 2, a dummy micro lens 200 is formed on the first insulating layer 160. The dummy micro lens 200 may be formed on the first insulating layer 160 to correspond to the unit pixel 120. The dummy microlens 200 may be formed in a dome shape by applying a photoresist film onto the first insulating layer 160 and then patterning and reflowing.

Referring to FIG. 3, a first insulating layer pattern 163 including a micro lens 165 is formed on the passivation layer 150. The micro lens 165 may be formed with the unit pixel 120 on the passivation layer 150. Therefore, the micro lens 165 may focus the incident light onto the lower unit pixel 120.

The micro lens 165 may be formed by dry etching the first insulating layer 160 using the dummy micro lens 200 as an etching mask. Etching of the first insulating layer 160 may be performed by a front etching method, and an etching ratio of the first insulating layer 160 and the dummy microlens 200 may be 0.8 to 1: 1. The etching ratio is not limited, and it is also possible to adjust the etching ratio so that the dummy micro lens 200 is overetched. In an embodiment, the passivation layer 150 may not be etched to form the first insulating layer pattern 63. Therefore, the first insulating layer pattern 163 including the microlens 165 may be formed on the passivation layer 150. In addition, the microlens 165 may be formed in a gapless form with a neighboring microlens. In addition, the first insulating layer pattern 163 may have a thickness of about 10 to about 1000 Å.

As described above, a dome-shaped micro lens 165 formed of an inorganic material is formed on the passivation layer 150.

Although not shown, when the microlens 165 is formed to be spaced apart from a neighboring microlens, a double layer structure is formed by depositing an inorganic thin film of the same material as the microlens 165 on the microlens 165. It is also possible to form a micro lens.

Referring to FIG. 4, a pad hole 155 exposing the pad 141 is formed. In order to expose the pad 141, a pad mask 300 is formed on the semiconductor substrate 100 including the micro lens 165. The pad mask 300 may be formed by coating and patterning a photosensitive material. The pad mask 300 may expose a surface of the first insulating layer pattern 163 corresponding to the pad 141. Thereafter, when the first insulating layer pattern 163 and the passivation layer 150 are etched using the pad mask 300 as an etch mask, a pad hole 155 is formed. Therefore, the pad 141 may be exposed by the pad hole 155.

Thereafter, the pad mask 300 may be removed by a general ashing process.

Referring to FIG. 5, a color filter 170 is formed on the micro lens 165. The color filter 170 uses dyed photoresist, and one color filter 170 is formed for each unit pixel to separate colors from incident light.

Each of the color filters 170 represents a different color, and is composed of three colors of red, green, and blue, and adjacent color filters 170 may overlap each other slightly to have a step. .

Although not shown, a pad protective layer may be formed on the surface of the pad 141 before the color filter 170 is formed.

In the exemplary embodiment, since the color filter 170 is formed on the microlens 165, the planarization layer does not need to be formed, thereby reducing process steps and costs.

In addition, since the microlens 165 is formed of an inorganic material and has a hard film quality, cracks due to physical shocks may be prevented.

In addition, since the color filter 170 is formed after the microlens 165 is formed, the surface of the microlens 165 may have a uniform film quality with reduced roughness. This is because the passivation layer 150 constituting the microlens 165 is deposited at a high temperature, the microlens 165 may have a high internal density and surface roughness may be reduced to improve light sensitivity and condensing rate.

6 to 11, the manufacturing process of the image sensor according to the second embodiment will be described in detail. In particular, in the description of the second embodiment with reference to Figs. 6 to 11, the same reference numerals and the same names will be given to the components substantially the same as the first embodiment.

Referring to FIG. 6, a unit pixel 120 including a photodiode and a CMOS circuit is formed on the semiconductor substrate 100.

An isolation layer (not shown) defining an active region and a field region may be formed on the semiconductor substrate 100. The unit pixel 120 formed in the active region includes a photodiode for receiving light and generating photocharges, and a CMOS circuit connected to the photodiode to convert the received photocharges into electrical signals.

After the related devices including the unit pixel 120 are formed, the metal wiring 140 and the interlayer insulating layer 130 are formed on the semiconductor substrate 100.

The interlayer insulating layer 130 may be formed of a plurality of layers. For example, the interlayer insulating layer 130 may be formed of a nitride film or an oxide film.

The metal wire 140 may be formed in a plurality of pieces through the interlayer insulating layer 130. The metal wire 140 is intentionally laid out so as not to block light incident on the photodiode. The pad 141 may also be formed when the metal wire 140 located at the top of the metal wire 140 is formed.

The passivation layer 150 is formed on the interlayer insulating layer 130. The passivation layer 150 may be formed of an insulating film to protect the device from moisture, scratches, and the like. The passivation layer 150 may be formed of any one of an oxide film, a nitride film, and an oxynitride film, or may have a structure in which one or more layers are stacked. For example, the passivation layer 150 may be formed of an Un-doped Silicate Glass (USG) film. Specifically, the passivation layer 150 may be formed at a temperature of 300 ~ 1000 ℃ using SiH 4 and O 2 gas. The passivation layer 150 may be formed to a thickness of about 1000 ~ 5000Å.

The first insulating layer 160 is formed on the passivation layer 150. For example, the first insulating layer 160 may be formed of an inorganic material including an oxide film or a nitride film. For example, the first insulating layer 160 may be formed of a nitride film. Specifically, the first insulating layer 160 may be deposited at a temperature of 300 to 1000 ° C. using a CVD process and using SiH 4 and NH 2 gases. The first insulating layer may be formed to a thickness of about 1000 ~ 5000Å. Then, since the first insulating layer 160 is deposited at a high temperature, the first insulating layer 160 may be formed to have a uniform film quality from which pinholes and the like are removed.

Referring to FIG. 7, a second insulating layer 250 is formed on the first insulating layer 160. The second insulating layer 250 may be formed of an inorganic material including any one of an oxide film, a nitride film, and an oxynitride film. For example, the second insulating layer 250 may be formed of a USG film. Specifically, the second insulating layer 250 may be formed at a temperature of 300 to 1000 ° C. using SiH 4 and O 2 gases. The second insulating layer 250 may be formed to a thickness of about 2000 ~ 5000Å.

Referring to FIG. 8, a dummy micro lens 200 is formed on the second insulating layer 250. The dummy micro lens 200 may be formed on the first insulating layer 160 to correspond to the unit pixel 120. The dummy microlens 200 may be formed in a dome shape by applying a photoresist film onto the first insulating layer 160 and then patterning and reflowing.

Referring to FIG. 9, a micro lens 255 is formed on the first insulating layer 160. The micro lens 255 may be formed for each unit pixel 120 on the first insulating layer 160. Therefore, the microlens 255 may focus incident light onto the lower unit pixel 120.

The micro lens 255 may be formed by dry etching the second insulating layer 250 using the dummy micro lens 200 as an etching mask. Etching of the second insulating layer 250 may be performed by a front etching method, and an etching ratio of the second insulating layer 250 and the dummy microlens 200 may be 0.8 to 1: 1. The etch ratio is not limited, and it is also possible to adjust the etch ratio so that the second insulating layer 250 is overetched.

In example embodiments, the second insulating layer 250 may be etched until all of the organic photoresist layers are etched. In addition, when the second insulating layer 250 is etched, a lower first insulating layer 160 may be used as an etching end point. Although not shown, the second insulating layer may form a second insulating layer pattern like the first insulating layer pattern in the above-described first embodiment.

Accordingly, the microlens 255 may be formed in a gapless form with a neighboring microlens.

As described above, a dome-shaped micro lens 255 formed of an inorganic material is formed on the first insulating layer 160.

Although not shown, when the microlens 255 is formed to be spaced apart from neighboring microlenses, an inorganic thin film may be deposited on the microlens 255 to form a microlens having a double layer structure.

Referring to FIG. 10, a pad hole 57 exposing the pad 141 is formed. In order to expose the pad 141, a pad mask 300 is formed on the semiconductor substrate 100 including the micro lens 255. The pad mask 300 may be formed by coating and patterning a photosensitive material. The pad mask 300 may expose a surface of the first insulating layer 160 corresponding to the pad 141. Thereafter, when the first insulating layer 160 and the passivation layer 150 are etched using the pad mask 300 as an etch mask, a pad hole 57 is formed. Therefore, the pad 141 may be exposed by the pad hole 57.

Thereafter, the pad mask 300 may be removed by a general ashing process.

Referring to FIG. 11, a color filter 170 is formed on the micro lens 255. The color filter 170 uses dyed photoresist, and one color filter 170 is formed for each unit pixel 120 to separate color from incident light.

Each of these color filters represents a different color, and is composed of three colors of red, green, and blue, and adjacent color filters 170 may overlap each other slightly to have a step.

Although not shown, a pad protective layer may be formed on the surface of the pad 141 before the color filter 170 is formed to prevent corrosion or contamination of the surface of the pad by a color filter process.

The above-described embodiments are not limited to the above-described embodiments and drawings, and it is common in the technical field to which the present embodiments belong that various changes, modifications, and changes can be made without departing from the technical spirit of the present embodiments. It will be apparent to those who have

1 to 5 are sectional views showing the manufacturing process of the image sensor according to the first embodiment.

6 to 11 are cross-sectional views illustrating a manufacturing process of an image sensor according to a second embodiment.

Claims (10)

A semiconductor substrate including unit pixels; An interlayer insulating film including metal wires disposed on the semiconductor substrate; A passivation layer disposed on the interlayer insulating film; A micro lens disposed on the passivation layer to correspond to the unit pixel; And And a color filter disposed on the micro lens. The method of claim 1, The micro lens is an image sensor formed of a nitride film. The method of claim 1, The micro lens is an image sensor formed of a USG film. The method of claim 3, An insulating layer is disposed under the micro lens, the insulating layer is formed of a nitride film. Forming unit pixels on the semiconductor substrate; Forming an interlayer insulating film including metal wires and pads on the semiconductor substrate; Forming a passivation layer on the interlayer insulating film; Forming a micro lens on the passivation layer to correspond to the unit pixel; And And forming a color filter on the micro lens. The method of claim 5, Forming the micro lens, Forming a first insulating layer on the passivation layer; Forming a dummy micro lens on the first insulating layer; And And etching the first insulating layer using the dummy microlens as an etching mask. The method of claim 5, Forming the micro lens; Forming a first insulating layer on the passivation layer; Forming a second insulating layer on the first insulating layer; Forming a dummy micro lens on the second insulating layer; And And etching the second insulating layer using the dummy microlens as an etching mask. The method according to claim 6 or 7, The first insulating layer is a manufacturing method of an image sensor formed of a nitride film. The method of claim 7, wherein And the second insulating layer is formed of a USG film. The method of claim 6, And etching the second insulating layer to form an insulating layer pattern and a micro lens.
KR1020070117287A 2007-11-16 2007-11-16 Image sensor and method for manufacturing thereof KR20090050697A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653506B2 (en) 2014-01-28 2017-05-16 SK Hynix Inc. Image sensor and method for fabricating the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9653506B2 (en) 2014-01-28 2017-05-16 SK Hynix Inc. Image sensor and method for fabricating the same

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