KR20090046545A - High voltage generator - Google Patents
High voltage generator Download PDFInfo
- Publication number
- KR20090046545A KR20090046545A KR1020070112761A KR20070112761A KR20090046545A KR 20090046545 A KR20090046545 A KR 20090046545A KR 1020070112761 A KR1020070112761 A KR 1020070112761A KR 20070112761 A KR20070112761 A KR 20070112761A KR 20090046545 A KR20090046545 A KR 20090046545A
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- KR
- South Korea
- Prior art keywords
- voltage
- pumping
- clock
- control signal
- output
- Prior art date
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
- H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0008—Arrangements for reducing power consumption
Abstract
The high voltage generator of the present invention includes a clock driver for delaying an external clock to generate first and second clock signals having opposite levels, and a charge pump for pumping external power voltages according to the first and second clock signals. In the high voltage generator, when the pumping voltage rises and stabilizes at a predetermined level, the clock voltage is supplied to the clock driver in which the external voltage is reduced.
High Voltage Generator, Clock Driver, External Supply Voltage
Description
The present invention relates to a high voltage generator for supplying a high voltage used in a semiconductor device.
In a conventional memory, IC chip, etc., there are circuits requiring a voltage higher than the supply voltage. High voltage generators that supply voltages above the supply voltage are in most cases produced using a charge pump, which is driven in accordance with the clock signal generated by the oscillator.
The high voltage generator also requires a regulator to keep the output voltage of the charge pump constant. As a general regulation method, the output voltage of the charge pump is compared with the reference voltage. When the output voltage is lower than the reference voltage, the clock signal is generated by the oscillator to drive the charge pump. I'm using a way to block creation.
However, a high voltage generator using only one regulator may cause ripple in the output voltage. In order to eliminate such ripple, a configuration in which a second regulator for regulating the output voltage of the regulator is added again is widely used.
However, the configuration using two regulators has the problem of increasing the current consumption in the high voltage generator.
In order to solve the various problems of the high voltage generator described above, an object of the present invention is to provide a high voltage generator capable of reducing the external power supply voltage supplied to the clock driver in accordance with the degree of increase in the pumping voltage of the charge pump.
The high voltage generator of the present invention for achieving the above object is a clock driver for delaying an external clock to generate first and second clock signals of opposite levels, and an external power supply voltage according to the first and second clock signals. In the high voltage generator including a charge pump for pumping, when the pumping voltage rises and stabilizes to a predetermined level, it is characterized in that for supplying the converted voltage to reduce the external power supply voltage to the clock driver.
In addition, the high voltage generator of the present invention is a high voltage generator for pumping the external power supply voltage in accordance with the first and second clock signals of mutually opposite levels, when the pumping voltage is stabilized to a predetermined level converted voltage that reduced the external power supply voltage It is characterized in that it comprises a voltage converter for supplying a clock driver to reduce the amplitude of the first and second clock signal.
According to the configuration of the present invention described above it is possible to lower the level of the external power supply voltage supplied to the clock driver according to the degree of rise of the pumping voltage. As the voltage supplied to the clock driver is lowered, the levels of the first and second clock signals output from the clock driver are also lowered, which reduces the ripple of the pumping voltage.
Therefore, it is possible to reduce the ripple of the pumping voltage without adopting a configuration for regulating the output voltage of the first regulator again. As a result, there is an effect of replacing a high voltage generator including two regulation with high current consumption.
Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. The present invention is not limited to the embodiments disclosed below, but will be implemented in various different forms, only these embodiments are intended to complete the disclosure of the present invention, and fully scope the scope of the invention to those skilled in the art. It is provided to inform you. Like numbers refer to like elements in the figures.
1 is a circuit diagram illustrating a high voltage generator that is commonly used.
The
The
The
The
The
The
The
The
According to this configuration, the value of the final pumping voltage VPP has the following equation, and this voltage becomes the first regulation voltage.
In the case of the first regulator, since the first regulation voltage is output by controlling only the operation of the charge pump, the ripple of the output is severe. In order to eliminate this, a second regulator of a method using a current control method is further configured.
On the other hand, the
The
The
The
To this end, it includes an OP amplifier that receives the second reference voltage VREF2 as the inverting terminal (−) and receives the second divided voltage as the non-inverting terminal (+).
At this time, by applying the same voltage as the second division voltage Vf2 as the second reference voltage VREF2, the magnitude of the second division voltage and the second reference voltage actually input are compared. Therefore, according to the comparison result, a high level voltage is output when the second division voltage is greater than the second reference voltage, and a low level voltage is output when the second division voltage is less than the second reference voltage.
On the other hand, the
Therefore, according to the comparison result of the
On the other hand, when the second division voltage is smaller than the second reference voltage, the low level voltage is output, so that the NMOS transistor N156 is turned off to cut off the current path.
The
To this end, the
When the current path is not formed, the
However, when the current path is formed, the voltage level applied to the gate of the NMOS transistor N158 is low so that the transistor cannot be turned on, so that the first regulation voltage is not supplied to the output terminal VREG of the second regulator.
The voltage VREG output by the configuration of the
However, when using the second regulator using the current control method as described above, there is a problem in that the current consumed is increased as compared with the configuration using only the first regulator.
First, as the difference between the pumping voltage VPP output from the first regulator and the voltage VREG output from the second regulator increases, the current value consumed becomes larger.
The first regulation voltage greater than the second regulation voltage must be output for the output of the second regulation voltage. For example, in order to output a second regulation voltage of about 26V, a first regulation voltage of 30V, which is approximately 4V or more, needs to be generated. The current value consumed by the above voltage difference is increased.
As described above, the configuration of outputting a high level pumping voltage increases the number of pump stages included in the charge pump, which increases the overall size.
In addition, the second regulator uses a method of extracting the current through the current blocking unit to produce a final output, which is a factor of increasing the current.
In view of the fact that the current used by the charge pump accounts for more than 50% of the entire chip, solving these problems can significantly reduce the current consumed in the operation of the entire chip.
2 is a circuit diagram illustrating a high voltage generator according to an embodiment of the present invention.
The
The
The
An internal configuration of the clock driver will be described in more detail.
3 is a circuit diagram showing a detailed configuration of the
The
At this time, the voltage supplied to each inverter in the present invention is to be applied differently according to the pumping degree of the charge pump.
In the conventional invention, the external power supply voltage VDD is fixedly applied regardless of the level of the pumping voltage, thereby causing ripple in the pumping voltage. Adding a regulator to remove the ripple is the circuit of FIG. 1 described above, and the problem is as described above.
In the present invention, it is to control to apply a voltage (VDC) of a level lower than the external power supply voltage (VDD) according to the pumping degree of the charge pump.
When the low level voltage is supplied to each inverter, the output level of the inverter is also lowered. In the case of a commonly used CMOS inverter, since the supply voltage supplied to the inverter is output as an output signal according to an input signal applied to the inverter, when the external supply voltage level is changed, the output level of the inverter is also changed.
Therefore, as the level of the supply voltage supplied to the
The components of FIG. 2 will be described again.
The
When the pumping voltage rises to a target voltage, a certain amount of ripple occurs. In the present invention, as described above, the voltage level of the clock output from the
The pumping
The pumping
The
The
To this end, the first reference voltage VREF1 is input to the non-inverting terminal (+), and the first divided voltage includes an OP amplifier receiving the inverting terminal (−).
According to an exemplary embodiment, a differential amplifier may receive a first reference voltage VREF1 as a non-inverting terminal (+) and a first split voltage as an inverting terminal (−) as the comparison unit.
According to such a configuration, the value of the final pumping voltage VPP has the following equation.
The
In the present invention, the external power supply voltage VDD is supplied as it is during the period in which the pumping voltage increases. However, when the pumping voltage reaches the target voltage and stabilizes, a voltage lower than the external power supply voltage is supplied to the
The
The
Therefore, when the pumping voltage rises and the external power supply
In addition, when the pumping voltage is stabilized and the
The external power supply voltage
A detailed configuration of the
Accordingly, the external power supply
However, since the high level control signal DETECT is applied in the period where the pumping voltage is stabilized, the NMOS transistor N258 is not turned on, and thus the PMOS transistor P256 is not turned on.
In this manner, the
The
In an embodiment of the present invention, the values of the passive elements are the same so that a value corresponding to 1/2 of the supply voltage Va is applied to the
The
According to an exemplary embodiment, a differential amplifier may receive a second reference voltage VREF2 as a non-inverting terminal (+) and a second divider voltage as an inverting terminal (−) as the comparison unit.
The
Meanwhile, the
If the values of the resistors are the same, the relationship is Va = 2 * Vref2. Therefore, the level of the conversion voltage VDC varies depending on how the second reference voltage is set.
In the present invention, the second reference voltage is applied so that a voltage of 1.8 to 2.0 V is output as the conversion voltage. This is a voltage lower than the external power supply voltage (2.7 to 3.6V). Preferably, the difference between the external power supply voltage and the conversion voltage is characterized in that 0.7 ~ 1.8V.
On the other hand, the second reference voltage is generated using a bandgap reference voltage generation circuit having a constant voltage value without being affected by temperature changes.
In summary, the
The
To this end, the first control
The first control
In operation of the first control signal supply unit, a high level enable signal EN is supplied. In addition, the clock driving signal CKEN of the high level is output in the rising period of the pumping voltage. Thus, the NOR gate outputs a low level signal, which becomes a high level signal via the second inverter. Thus, the PMOS transistor P262 is maintained in the turn off state.
On the other hand, when the pumping voltage is stabilized and the low level clock driving signal CKEN is output, the negative logic sum gate outputs a high level signal. This becomes a low level signal through a second inverter, and the PMOS transistor P262 is turned on so that an external power supply voltage having a high level is stored in the control
The second control
When the external power supply voltage VDD is applied to the nonvolatile memory device, it rises from 0V to a predetermined voltage. At this time, while monitoring the rise of the external power supply voltage, when a voltage higher than a predetermined level is applied, the power-up reset signal POR of a low level is output.
Accordingly, a power-up reset signal POR is applied at the initial stage of operation of the nonvolatile memory device to store a low level voltage in the control
The control
In view of the operation of the nonvolatile memory device, since a power-up reset signal is initially applied, a second low level control signal is stored in the latch and output as the control signal DETECT.
Thereafter, when the pumping voltage rises and stabilizes, and the low level clock driving signal CKEN is output, the high level first control signal is stored in the latch and output as the control signal DETECT.
Now, the operation of the high voltage generator will be summarized.
4 is a waveform diagram illustrating various waveforms applied during the operation of the high voltage generator according to an exemplary embodiment of the present invention.
First, when the pumping voltage is increased to apply the high level clock driving signal CKEN, the
The low level control signal DETECT operates the external power
Thereafter, when the pumping voltage reaches the target constant voltage level and stabilizes, the clock driving signal CKEN having a low level is output. However, the high level voltage may be output in the form of an impulse according to the operation of the first comparator of the pumping voltage regulator.
In response to the low level clock driving signal CKEN input, the
In response to the control signal being applied, the
As such, since the magnitude of the supply voltage supplied to the
In particular, as the magnitude of the supply voltage is lowered, the level of the clock is also lowered, which has the effect of reducing the ripple of the pumping voltage.
1 is a circuit diagram illustrating a high voltage generator that is commonly used.
2 is a circuit diagram illustrating a high voltage generator according to an embodiment of the present invention.
3 is a circuit diagram showing a detailed configuration of the
4 is a waveform diagram illustrating various waveforms applied during the operation of the high voltage generator according to an exemplary embodiment of the present invention.
Description of the main parts of the drawing
200: high voltage generator
210: oscillator
220: clock driver
230: charge pump
240: pumped voltage regulator
242: first comparator 244: first voltage divider
250: voltage conversion unit
252: second comparator 254: second voltage divider
256: voltage supply unit 258: external power voltage supply control unit
260: voltage conversion control unit
262: first control signal supply unit 264: control signal buffer unit
268: second control signal supply unit
Claims (18)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020070112761A KR20090046545A (en) | 2007-11-06 | 2007-11-06 | High voltage generator |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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KR1020070112761A KR20090046545A (en) | 2007-11-06 | 2007-11-06 | High voltage generator |
Publications (1)
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KR20090046545A true KR20090046545A (en) | 2009-05-11 |
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Family Applications (1)
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KR1020070112761A KR20090046545A (en) | 2007-11-06 | 2007-11-06 | High voltage generator |
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KR (1) | KR20090046545A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107493013A (en) * | 2017-07-31 | 2017-12-19 | 上海华力微电子有限公司 | A kind of charge pump circuit for reducing the erasable power consumption of memory |
-
2007
- 2007-11-06 KR KR1020070112761A patent/KR20090046545A/en not_active Application Discontinuation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107493013A (en) * | 2017-07-31 | 2017-12-19 | 上海华力微电子有限公司 | A kind of charge pump circuit for reducing the erasable power consumption of memory |
CN107493013B (en) * | 2017-07-31 | 2019-09-17 | 上海华力微电子有限公司 | A kind of charge pump circuit reducing the erasable power consumption of memory |
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