KR20090044485A - Equipment of flip chip bonder and method for error detection of flip chip bonding using the same - Google Patents

Equipment of flip chip bonder and method for error detection of flip chip bonding using the same Download PDF

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Publication number
KR20090044485A
KR20090044485A KR1020070110606A KR20070110606A KR20090044485A KR 20090044485 A KR20090044485 A KR 20090044485A KR 1020070110606 A KR1020070110606 A KR 1020070110606A KR 20070110606 A KR20070110606 A KR 20070110606A KR 20090044485 A KR20090044485 A KR 20090044485A
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KR
South Korea
Prior art keywords
substrate
flip chip
semiconductor chip
chip
flip
Prior art date
Application number
KR1020070110606A
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Korean (ko)
Inventor
이웅선
Original Assignee
주식회사 하이닉스반도체
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Priority to KR1020070110606A priority Critical patent/KR20090044485A/en
Publication of KR20090044485A publication Critical patent/KR20090044485A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Wire Bonding (AREA)

Abstract

According to an aspect of the present invention, there is provided a substrate flip chip bonder device comprising: a flip chip bonder device for flip chip bonding a semiconductor chip on a substrate, the substrate transfer part transferring a substrate; A bond stage on which a substrate transferred to the substrate transfer unit is disposed; A die pick-up unit configured to pick up and flip-chip bond semiconductor chips having bumps formed on the substrate disposed in the bond stage; A vision unit attached to the die pick-up unit and identifying a position of a substrate portion to which the semiconductor chip is flip chip bonded; A height measuring unit attached to the vision unit and measuring heights of the semiconductor chip flip-bonded on the substrate and the substrate, respectively; And a controller configured to determine a bonding failure of the flip chip bonded semiconductor chip by calculating a distance between the substrate and the semiconductor chip from the height of the substrate and the semiconductor chip measured by the height measuring unit.

Description

Equipment of flip chip bonder and method for error detection of flip chip bonding using the same}

The present invention relates to a flip chip bonder device and a flip chip bonding error detection method using the same, and more particularly, a flip chip that can improve productivity in a semiconductor package process by measuring a gap between a semiconductor chip and a substrate during flip chip bonding. A bonder device and a flip chip bonding error detection method using the same.

Some packages, as well as typical semiconductor packages, use soldering by lead frames as a method of mounting on a printed circuit board (PCB). However, the soldering method using the lead frame has advantages in that the process proceeds easily and is superior in terms of reliability. However, the soldering method using the lead frame has disadvantages in terms of electrical characteristics in connection with a long electrical signal transmission length between the semiconductor chip and the printed circuit board.

In order to solve this problem, the proposed flip chip package has a structure for connecting a semiconductor chip and a substrate by forming a bump for electrical connection on a bonding pad of the semiconductor chip.

In general, bumps formed on the bonding pads of the semiconductor chip may include bumps formed by solder bumps, stud bumps, bumps formed by plating or screen printing, and metals deposited and etched. Etc. are used.

1 is a cross-sectional view illustrating a conventional stud bump type flip chip package.

As shown, a plurality of connection pads 102 and ball lands 104 are provided on the upper and lower surfaces, respectively, and a plurality of upper and lower surfaces on the substrate 100 on which solder 110 is formed on each of the connection pads 102. The bonding pad 122 of the semiconductor chip 120 having the stud bump 130 is provided on the bonding pad 122 is flip chip bonded. A filler 140 is formed between the semiconductor chip 120 and the substrate 100 to improve the fatigue life of the solder 110 joint and absorb a part of the stress applied to the bump 130. An encapsulation part 150 is formed on the upper surface of the substrate 100 to cover the semiconductor chip 120, and external connection terminals 160 such as solder balls are attached to each ball land 104 on the lower surface of the substrate 100. do.

Since the flip chip package is electrically connected through the bump 130, not only a package having a low height can be realized, but also an operation speed of the package can be improved, power consumption can be reduced, and circuit design can be simplified. The electrical characteristics of the package can be improved.

Meanwhile, a flip chip process of attaching a semiconductor chip onto a substrate to form the flip chip package is performed in a flip chip bonder system.

However, the conventional flip chip bonder system is configured to detect or detect an error occurrence only for a position error caused by bumps during flip chip bonding, and is not configured to detect when an error occurs for a gap between the semiconductor chip and the substrate. not.

In the flip chip bonding process, the gap between the semiconductor chip and the substrate is one of the most important process conditions. In the flip chip bonding process, when the gap between the semiconductor chip and the substrate is not constant or the gap is out of the process conditions, Unfilled and overfilled fillers formed between the semiconductor chip and the substrate are generated to cause electrical signal errors such as electrical shorts between the bumps or poor connection of the bumps.

The present invention provides a flip chip bonder device and a flip chip bonding error detection method using the same, which can improve productivity of a semiconductor package process by measuring a gap between a semiconductor chip and a substrate during flip chip bonding.

According to an aspect of the present invention, there is provided a substrate flip chip bonder device comprising: a flip chip bonder device for flip chip bonding a semiconductor chip on a substrate, the substrate transfer part transferring a substrate; A bond stage on which a substrate transferred to the substrate transfer unit is disposed; A die pick-up unit configured to pick up and flip-chip bond semiconductor chips having bumps formed on the substrate disposed in the bond stage; A vision unit attached to the die pick-up unit and identifying a position of a substrate portion to which the semiconductor chip is flip chip bonded; A height measuring unit attached to the vision unit and measuring heights of the semiconductor chip flip-bonded on the substrate and the substrate, respectively; And a controller configured to determine a bonding failure of the flip chip bonded semiconductor chip by calculating a distance between the substrate and the semiconductor chip from the height of the substrate and the semiconductor chip measured by the height measuring unit.

The height measuring unit includes a laser device.

The height measuring unit includes a probe device having a probe.

A flip chip bonding error detection method using a substrate flip chip bonder according to the present invention comprises: disposing a substrate transferred to a substrate transfer part on the bond stage; Moving the die pickup portion to which the vision portion is attached to the bond stage to identify a designated position of a portion of the substrate where the semiconductor chip is flip chip bonded to the vision portion; Picking up the bumped semiconductor chip to the die pick-up unit and flip chip bonding the semiconductor chip at a designated position of the substrate; Measuring heights of the semiconductor chip and the substrate with respect to the flip chip bonded semiconductor chip using a height measuring unit attached to the die pickup unit; And determining a bonding defect of the flip chip bonded semiconductor chip by calculating a distance between the substrate and the semiconductor chip using the control unit using the height of the substrate and the semiconductor chip measured by the measuring unit.

The height measurement by the height measuring unit is performed using a laser device.

The height measurement by the height measuring unit is performed by using a probe device having a probe.

The probe using the probe device presses the semiconductor chip and the substrate with a force of 0.001 to 1N during height measurement.

According to the present invention, a flip chip bonder equipped with a height measuring unit detects an error of a gap between a semiconductor chip and a substrate during a flip chip process during a flip chip process, thereby quickly reworking the flip chip bonding process. The occurrence of defects can be reduced and the productivity of the semiconductor package can be increased.

In addition, when the gap error occurs, by not performing the filler forming process it is possible to prevent the electrical short (short) or the connection between the bumps generated by the conventional unfilled or overfilled bumps.

The present invention is to measure the height of the semiconductor chip and the substrate during the flip chip process using a flip chip bonder equipped with a height measuring unit including a laser device or a probe device, and from the measured height of the semiconductor chip and the substrate By measuring the distance between the substrate and the substrate, errors in the gap Gap between the semiconductor chip and the substrate are detected during the flip chip process.

Therefore, when the gap between the semiconductor chip and the substrate is out of the process conditions during the flip chip process, it is possible to quickly rework the flip chip bonding process without performing a subsequent process such as a filler forming process to reduce the occurrence of defects and semiconductor The productivity of the package can be increased.

In addition, when the gap error occurs, by not performing the filler forming process, it is possible to prevent an electrical short or a bad connection between bumps generated by conventional unfilled or overfilled.

Hereinafter, a flip chip bonder device and a height measuring method using the same according to an embodiment of the present invention will be described in detail.

2 is a diagram illustrating a flip chip bonder device according to an exemplary embodiment of the present invention.

As shown, the flip chip bonder device 200 according to an embodiment of the present invention is a substrate transfer unit 230, the bond stage (Bond stage: 240), the die pick-up unit 250, the vision (Vision) unit 260 , The height measuring unit 270 and the control unit 280.

The substrate transfer unit 230 continuously transfers a plurality of substrates 200 used in a flip chip bonding process, and the bond stage 240 has a substrate 200 transferred to the transfer unit 230 in a flip chip bonding process. This part is arranged for.

The die pick-up unit 250 is a device for picking up and flip-chip bonding semiconductor chips 210 having bumps 216 formed on the substrate 200 disposed on the bond stage 240 and individually separated.

The vision unit 260 is attached to the die pick-up unit 250 and checks the position of the portion of the substrate 200 to which the semiconductor chip 210 is flip chip bonded, and the bump 216 provided in the semiconductor chip. It is a device to check the error for the location.

The height measuring unit 270 is attached to the vision unit 260 to measure the height of the semiconductor chip 210 and the substrate 200 during flip chip bonding. Can be attached.

The height measuring unit 270 irradiates a laser beam onto the surfaces of the semiconductor chip 210 and the substrate 200 to measure the height of the semiconductor chip 210 and the substrate 200, or the semiconductor chip ( Probe device for measuring the height of the semiconductor chip 210 and the substrate 200 by using a probe on the surface of the 210 and the substrate 200, respectively.

The controller 280 controls the driving of the substrate transfer unit 230, the bond stage 240, the die pickup unit 250, the vision unit 260, and the height measuring unit 270, and the height measuring unit 270. The gap between the semiconductor chip 210 and the substrate 200 is calculated based on the heights of the semiconductor chip 210 and the substrate 200, and the bonding chip of the flip chip bonded semiconductor chip 210 is determined.

Meanwhile, a method of measuring a gap between the substrate and the semiconductor chip and detecting a flip chip bonding error using a flip chip bonder equipped with a height measuring device according to the present invention is performed as illustrated in FIGS. 3 and 4.

Referring to FIG. 3, when the height measuring unit 270a included in the flip chip bonder of FIG. 2 includes a laser device, a method for measuring a gap between the semiconductor chip 210 and the substrate 200 may be described first. The substrate transfer part 230 may arrange the substrate 200 for flip chip bonding on the bond stage 240.

Subsequently, the die picker 250 to which the vision unit 260 is attached is moved to the bond stage 240 so that the semiconductor chip 210 is flip chip bonded to the vision unit 260. ) Check the specified position of the part, i.e. the exact coordinates.

Subsequently, the semiconductor chip 210 having the bumps 216 formed thereon is picked up by the die pickup unit 250 to flip chip bond the semiconductor chip 210 to a designated position of the substrate 200.

Thereafter, the laser 272 is applied to the upper surface of the semiconductor chip 210 and the surface of the substrate 200 using the height measuring unit 270a including the laser device attached to the side of the vision unit 260. The upper surface heights a and b of the semiconductor chip 210 and the substrate 200 are measured, respectively.

In detail, the height measuring unit 270a including the laser device may include a semiconductor at a predetermined position of the substrate 200 for flip chip bonding between the upper surface of the substrate 200 and the semiconductor chip 210 in the vision unit 260. By irradiating the laser 272 on the upper surface of the chip 210, the intensity, time, etc. of the reflected laser are determined to measure the heights a and b of the upper surfaces of the semiconductor chip 210 and the substrate 200.

Then, the semiconductor chip 210 is flip-chip bonded by calculating the distance between the semiconductor chip 210 and the substrate 200 by using the heights a and b measured by the height measuring unit 270a by the controller 280. The presence or absence of bonding failure of the chip 210 is determined.

In this case, an interval range in which a gap between the semiconductor chip 210 and the substrate 200 is designed is input to the controller 280, and the gap between the measured semiconductor chip 210 and the substrate 200 is the designed interval. If out of range, the controller 280 detects an error and issues an error indication.

The controller 280 controls the driving of the substrate transfer unit 230, the bond stage 240, the die pick-up unit 250, the vision unit 260, and the height measuring unit 270, for the flip chip bonding. Stores the screen identified by the specified position and the vision unit 260, the height of the semiconductor chip 210 and the substrate 200 measured by the height measuring unit 270 and the semiconductor chip 210 and the substrate 200 Save the gap between and detect whether the bonding is bad.

Referring to FIG. 4, when the height measuring unit 270b included in the flip chip bonder of FIG. 2 includes a probe device, a method of measuring a distance between the semiconductor chip 210 and the substrate 200 may include a laser. Instead, the same process as shown in FIG. 3 is performed except that the heights a and b are measured by using the probes 274 on the upper surfaces of the semiconductor chip 210 and the substrate 200, respectively.

When measuring the height (a, b) of the upper surface of the semiconductor chip 210 and the substrate 200 by using the height measuring unit 270b made of the probe device, the tip of the probe 274 and the semiconductor The chip 210 and the top surface of the substrate 200 must contact. In this case, since the flip chip bonded semiconductor chip 210 and the substrate 200 are not damaged by the contacting probe 274, the probe 274 may have a very small force, preferably 0.001 to 1N. The upper surfaces of the semiconductor chip 210 and the substrate 200 must be pressed.

The heights a and b are calculated by the controller 280 by the height measuring unit 270b including the probe device, so that the calculated interval between the semiconductor chip 210 and the substrate 200 is designed. In case of departure, the controller 280 detects a flip chip bonding error and issues an error indication.

As described above, the present invention measures the distance between the semiconductor chip and the substrate by measuring the distance between the semiconductor chip and the substrate during flip chip bonding using a flip chip bonder equipped with a height measuring unit including a laser device or a probe device. ) Is detected during the flip chip process.

Therefore, when the gap between the semiconductor chip and the substrate is out of the process conditions during the flip chip process, it is possible to quickly rework the flip chip bonding process without performing a subsequent process such as a filler forming process to reduce the occurrence of defects and semiconductor The productivity of the package can be increased.

In addition, when the gap error occurs, by not performing the filler forming process, it is possible to prevent the electrical short or the poor connection between the bumps generated by the conventional unfilled or overfilled.

As mentioned above, although the present invention has been illustrated and described with reference to specific embodiments, the present invention is not limited thereto, and the following claims are not limited to the scope of the present invention without departing from the spirit and scope of the present invention. It can be easily understood by those skilled in the art that can be modified and modified.

1 is a cross-sectional view showing a conventional stud bump type flip chip package.

2 illustrates a flip chip bonder device according to an embodiment of the present invention;

3 is a view illustrating a method of measuring a gap between a substrate and a semiconductor chip and detecting a flip chip bonding error by using a flip chip bonder device having a height measuring device including a laser device.

4 is a view illustrating a method of measuring a gap between a substrate and a semiconductor chip and detecting a flip chip bonding error by using a flip chip bonder device having a height measuring device including a probe device.

Claims (7)

A flip chip bonder device for flip chip bonding a semiconductor chip on a substrate, A substrate transfer unit transferring the substrate; A bond stage on which a substrate transferred to the substrate transfer unit is disposed; A die pick-up unit configured to pick up and flip-chip bond semiconductor chips having bumps formed on the substrate disposed in the bond stage; A vision unit attached to the die pick-up unit and identifying a position of a substrate portion to which the semiconductor chip is flip chip bonded; A height measuring unit attached to the vision unit and measuring heights of the semiconductor chip flip-bonded on the substrate and the substrate, respectively; And A controller configured to determine a bonding failure of the flip chip bonded semiconductor chip by calculating a distance between the substrate and the semiconductor chip from the height of the substrate and the semiconductor chip measured by the height measuring unit; Flip chip bonder device comprising a. The method of claim 1, And the height measuring unit comprises a laser device. The method of claim 1, The height measuring unit includes a probe device having a probe, characterized in that the flip chip bonder device. A flip chip bonding error detection method using a flip chip bonder having the configuration of claim 1, Disposing a substrate transferred to a substrate transfer unit on the bond stage; Moving the die pickup portion to which the vision portion is attached to the bond stage to identify a designated position of a portion of the substrate where the semiconductor chip is flip chip bonded to the vision portion; Picking up the bumped semiconductor chip to the die pick-up unit and flip chip bonding the semiconductor chip at a designated position of the substrate; Measuring heights of the semiconductor chip and the substrate with respect to the flip chip bonded semiconductor chip using a height measuring unit attached to the die pickup unit; And Determining a bonding defect of the flip chip bonded semiconductor chip by calculating a distance between the substrate and the semiconductor chip using a control unit using the height of the substrate and the semiconductor chip measured by the measuring unit; Flip chip bonding error detection method using a flip chip bonder characterized in that it comprises. The method of claim 4, wherein The height measurement by the height measuring unit is a flip chip bonding error detection method using a flip chip bonder, characterized in that performed using a laser device. The method of claim 4, wherein The height measurement by the height measuring unit is a flip chip bonding error detection method using a flip chip bonder, characterized in that performed using a probe device having a probe. The method of claim 6, The probe using the probe device is a flip chip bonding error detection method using a flip chip bonder, characterized in that pressing the semiconductor chip and the substrate with a force of 0.001 ~ 1N when measuring the height.
KR1020070110606A 2007-10-31 2007-10-31 Equipment of flip chip bonder and method for error detection of flip chip bonding using the same KR20090044485A (en)

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KR1020070110606A KR20090044485A (en) 2007-10-31 2007-10-31 Equipment of flip chip bonder and method for error detection of flip chip bonding using the same

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Application Number Priority Date Filing Date Title
KR1020070110606A KR20090044485A (en) 2007-10-31 2007-10-31 Equipment of flip chip bonder and method for error detection of flip chip bonding using the same

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016099197A1 (en) * 2014-12-19 2016-06-23 전자부품연구원 Device and method for testing semiconductor element, using dynamic characteristic of junction temperature
KR20180119237A (en) * 2017-04-25 2018-11-02 주식회사 파워로직스 Apparatus for coupling bracket for comera module

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016099197A1 (en) * 2014-12-19 2016-06-23 전자부품연구원 Device and method for testing semiconductor element, using dynamic characteristic of junction temperature
KR20180119237A (en) * 2017-04-25 2018-11-02 주식회사 파워로직스 Apparatus for coupling bracket for comera module

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