KR20090044049A - Gas injection appartus and apparatus for depositing the organic thin film using the same and organic thin filmdeposition method - Google Patents

Abstract

The present invention relates to a gas spraying apparatus for sequentially depositing a plurality of organic thin films using several kinds of powders in a single chamber, an organic thin film deposition apparatus using the same, and an organic thin film deposition method. The thin film deposition apparatus includes a chamber, a gas injection unit provided in the chamber, and a substrate support provided to face the gas injection unit, on which a substrate is seated, wherein the gas injection unit includes a plurality of supply passages through which different powders are supplied. A supply pipe portion formed with; And an injector part connected to the supply pipe part and configured to communicate with the plurality of supply paths and having a gas injection hole communicating with the flow path to inject gas.

Organic thin film, organic material, injector, organic light emitting device, OLED

Description

Gas injection device and organic thin film deposition apparatus and organic thin film deposition method using the same {Gas injection appartus and Apparatus for depositing the organic thin film using the same and Organic thin filmdeposition method}

The present invention relates to a gas injection apparatus, an organic thin film deposition apparatus and an organic thin film deposition method using the same, and more particularly, a gas that enables the deposition of multiple organic thin films in sequence using different kinds of powders in a single chamber. The present invention relates to a spray device, an organic thin film deposition apparatus and an organic thin film deposition method using the same.

In general, an organic light emitting device (OLED) is a display device that displays a desired image by using characteristics of an organic light emitting material which emits light by applying a voltage. The basic structure of the organic light emitting device is a structure in which a pair of transparent electrodes and a counter electrode are stacked on a glass substrate, and an organic thin film is inserted between the electrodes. Here, the organic thin film may be manufactured in a structure in which a hole injection film, a hole transport film, a light emitting film, an electron transport film, and the like are stacked so as to transport electrons and holes and emit light.

Organic materials used in the organic thin film deposition process for manufacturing an organic light emitting device does not require a high vapor pressure, unlike inorganic materials, it is easy to decompose and denature at high temperatures. Due to the characteristics of such a material, a conventional organic thin film is charged onto a tungsten crucible, and the crucible is heated to vaporize the organic material and deposited on the substrate. However, in recent years, since the amount of deposition raw materials that can be stored in the crucible is limited, the organic material is supplied to an injector equipped with a heater to vaporize the organic material by the heater, and the substrate is vaporized. The method of spraying and depositing by this is proposed and used.

However, each thin film of the organic light emitting device having a structure in which various thin films are laminated is deposited by vaporizing powders of different organic materials. In general, a method of manufacturing an organic light emitting device is to supply one organic material to an injector through a supply pipe. As it is vaporized and sprayed, one thin film is deposited on a glass substrate, and then another organic material is supplied to the injector and vaporized to repeat the method of depositing another thin film on the preceding thin film.

However, as the organic material used in the previous step of the thin film deposition process remains in the supply pipe and is mixed with the remaining organic material when the organic material is supplied in the next step, a desired thin film cannot be deposited. For this reason, the process of using one chamber for depositing one kind of thin film and transferring the substrate to another chamber for depositing another kind of thin film is repeated, and this process decreases productivity and increases the number of devices. There was a problem.

In addition, there is a problem in that the organic material is not properly vaporized in the injector and supplied to the chamber, or because the flow path inside the injector is narrow, it is difficult to stably deposit a uniform thin film such as the organic material flows backward.

SUMMARY OF THE INVENTION The present invention has been made to solve the above-described problems, and a gas spraying apparatus for depositing various kinds of thin films using various kinds of organic materials in a single chamber, an organic thin film deposition apparatus and an organic thin film deposition method using the same The purpose is to provide.

In addition, an object of the present invention is to provide a gas injection apparatus and an organic thin film deposition apparatus using the same that can increase the vaporization rate of the injector.

According to an aspect of the present invention, there is provided a gas injection unit, including: a supply pipe part including a plurality of supply passages through which different powders are supplied; And an injector part connected to the supply pipe part and configured to communicate with the plurality of supply paths and having a gas injection hole communicating with the flow path to inject gas.

And, the injector is characterized in that the heating means for vaporizing the powder is provided. In this case, it is preferable that the heating means is a core heater or a lamp heater.

In addition, the cross-sectional area of the flow path is characterized in that more than 140% of the cross-sectional area of the supply passage having the minimum cross-sectional area of the plurality of supply passages.

In addition, the flow path is characterized in that at least one or more heat transfer members are provided. At this time, the heat transfer member will be preferably a mesh-type mesh or ball.

And, the injector portion and the top plate is provided with a drive shaft for raising and lowering and rotating to the upper surface; A middle plate having a flow passage communicating with a supply passage of the supply pipe portion; And a bottom plate on which a gas injection hole communicating with the flow path is formed on the bottom surface, and the top plate, the middle plate, and the bottom plate are sequentially stacked.

The organic thin film deposition apparatus according to the present invention includes a chamber, a gas injection unit provided in the chamber, and a substrate support provided to face the gas injection unit, on which a substrate is mounted, wherein the gas injection unit is supplied with different powders. A supply pipe portion having a plurality of supply passages formed therein; And an injector part connected to the supply pipe part and configured to communicate with the plurality of supply paths and having a gas injection hole communicating with the flow path to inject gas.

At this time, the injector is characterized in that the heating means for vaporizing the powder is provided.

In addition, at least one heat transfer member is provided in the flow path, and the heat transfer member is preferably a mesh type mesh or ball.

The organic thin film deposition method according to the present invention is a method for depositing multiple layers of organic thin films on a substrate seated in a chamber, by supplying a raw material to any one of a plurality of communication holes provided in the gas injection device to the heating means Vaporizing and spraying; Supplying an inert gas to the gas injection device to purge the space where the raw material is vaporized; Supplying another raw material to another one of the plurality of communication holes provided in the gas injection device, vaporizing the same by heating means, and then spraying the raw material; Supplying an inert gas to the gas injection device to purge the vaporized space of the other raw material.

At this time, in the step of supplying and spraying the raw material, it is preferable to supply an inert gas in the other communication hole except the communication hole to which the raw material is supplied.

In addition, the step of supplying and spraying the raw material and the purging of the vaporized space of the raw material by supplying an inert gas may be repeatedly performed corresponding to the number of raw materials.

According to the present invention, different types of organic thin films can be deposited in a single chamber by sequentially vaporizing and spraying various types of organic materials in a single gas injection unit, thereby improving productivity and reducing costs of the organic thin film deposition process. Can be obtained.

In addition, by providing a heat transfer member on the flow path of the gas injection unit to improve the vaporization rate of the organic material has the effect of improving the stability of the organic thin film deposition process.

Hereinafter, with reference to the accompanying drawings will be described an embodiment of the present invention in more detail.

However, the present invention is not limited to the embodiments disclosed below, but will be implemented in various forms, and only the embodiments are intended to complete the disclosure of the present invention, and to those skilled in the art to fully understand the scope of the invention. It is provided to inform you.

1 is a conceptual diagram illustrating an organic thin film deposition apparatus according to the present invention.

As shown in FIG. 1, the organic thin film deposition apparatus according to the present invention is provided to face the chamber 100, the gas injection unit 200 provided in the chamber 100, and the gas injection unit 200. And a substrate support 300 on which G) is seated.

The chamber 100 is formed in a cylindrical shape, and its shape may be changed according to the shape of the semiconductor wafer or the glass substrate (hereinafter referred to as "substrate"). The upper and lower parts are sealed, and a predetermined space is formed so that the gas injection unit 200 and the substrate support 300 are disposed therein. At this time, although not shown, a gate (not shown) may be formed on the sidewall of the chamber 100 to draw and withdraw the substrate G, and a gas in the chamber 100 may be formed on the lower surface of the chamber 100. An exhaust device (not shown) for exhausting the gas may be provided. Of course, the chamber 100 has been presented in a shape that is sealed up and down, it may be configured to be separated into the lower chamber and the chamber lid.

The gate (not shown) may be formed at one side of the chamber 100, and serves to lead and withdraw the substrate G into the chamber 100. In this case, the gate may be formed on the other side facing one side of the chamber 100. In addition, the exhaust device (not shown) is provided below the chamber 100 and serves to exhaust reaction by-products and gases generated during deposition to the outside of the chamber 100. At this time, the exhaust device may be formed on the side wall of the chamber 100 in addition to the lower portion of the chamber 100, it may be formed of a plurality.

The gas injection unit 200 applies an injector method in the present invention as a means for vaporizing the organic material powder (hereinafter referred to as "powder"), which is a raw material supplied from the outside of the chamber 100, onto the substrate G. . The gas injection unit 200 includes a supply pipe portion 210 in which a plurality of supply passages through which different powders are supplied are formed; A plurality of gas injection holes 251 are formed, and the plurality of supply passages are configured with an injector 220 having a flow path 241 formed to communicate with the gas injection holes 251. In this case, a sealing part 280 for sealing is provided at a connection portion between the supply pipe part 210 and the injector part 220. The sealing part 280 may be configured of a cylindrical magnetic seal.

The supply pipe part 210 is provided with one main supply pipe 211, and a plurality of communication holes 213 for supplying different powders are provided in the main supply pipe 211 to form a supply passage. In this case, each communication hole 213 is connected to a powder supply source 217 for supplying different powders provided on the outside of the chamber 100 to become passages for supplying different powders. In addition, a gas supply pipe (not shown) connected to an inert gas supply source (not shown) provided outside of the chamber 100 is connected to each communication hole 213 to independently inert gas to each communication hole 213. To be supplied.

At this time, the supply pipe part 210, that is, the main supply pipe 211 is installed through the upper portion of the chamber 100, the injector 220 is connected to the end of the flow path formed in the injector 220 ( 241 and the plurality of communication holes 213 are in communication.

The supply pipe part 210 is not limited to that shown in FIG. 1, and may be any type as long as it can separately supply a plurality of powders to the flow path 241 of the injector part 220. For example, a plurality of sub supply pipes may be provided to supply different powders to each other, and the plurality of sub supply pipes may be connected to the injector unit 220 to communicate with the flow path 241 to form a plurality of supply passages. There will be.

The injector unit 220 has a flow path 241 formed therein, a plurality of gas injection holes 251 are formed on the bottom surface thereof, and the gas injection holes 251 communicate with the flow path 241. In addition, the injector unit 220 is provided with a heating means 260 for vaporizing the powder. Thus, different kinds of powders sequentially supplied through the supply pipe part 210 are vaporized by the heating means 260, and are sprayed through the gas injection hole 251 to be deposited on the substrate G.

 The gas injection unit 200 will be described in detail later.

The substrate support 300 is formed in the same shape as the shape of the substrate G, and a driving member (not shown) for lowering or rotating the substrate support 300 is connected to a lower portion of the substrate support 300. . Here, one substrate G may be mounted on the substrate support 300, and a plurality of substrates G may be simultaneously mounted. In addition, the driving member for lifting and rotating the substrate support 300 is one drive member is to raise and lower the substrate support 300, but to be separated to drive the lifting or rotation separately Of course it can.

In addition, the substrate support 300 may be provided with a substrate heating means (not shown) capable of heating the substrate support 300 to a predetermined temperature. That is, the substrate heating means applies heat to the substrate G seated on the substrate support 300 to provide a predetermined temperature for deposition. Here, a core heater may be provided inside the substrate support 300 as the substrate heating means, and a separate lamp heater may be connected to the substrate support 300 at a lower portion thereof to heat the substrate support 300.

Figure 2a is an exploded perspective view showing a gas injection device according to an embodiment of the present invention, Figure 2b is a partial cutaway perspective view showing a gas injection device according to an embodiment of the present invention.

As shown in the drawing, the gas injection unit 200 according to the exemplary embodiment of the present invention is connected to an end of the supply pipe part 210 and the supply pipe part 210 to which different powders are separately supplied, respectively, and powder It is composed of an injector 220 to vaporize the injection.

The supply pipe part 210 is provided with one supply pipe 211 to separately supply different powders as described above, and a plurality of communication holes 213 having a constant cross-sectional area are formed therein, so that different powders and inert powders are formed. It is provided to supply gas. Of course, the present invention is not limited thereto, and a single supply pipe 211 may be provided and a plurality of supply passages may be formed by dividing the inside into partition walls.

The injector unit 220 is a means for vaporizing the powder supplied from the supply pipe unit 210 and spraying the vaporized organic material toward the substrate G. The body of the injector unit 220 is a top plate 230. The middle plate 240 and the bottom plate 250 are divided and sequentially stacked and assembled with each other.

The upper surface of the top plate 230 is provided with a drive shaft 231 for lifting and lowering. The drive shaft 231 is installed through the upper surface of the chamber 100, the supply pipe portion 210 is interpolated therein. At this time, the supply pipe 210 is a sealing portion 280, that is, a magnetic seal between the drive shaft 231 and the supply pipe 210 to rotate the injector 220 by rotating the drive shaft 231 in a fixed state Is provided.

In addition, a driving member (not shown) for raising or lowering the injector unit 220 is connected to the driving shaft 231. The driving member for elevating and rotating the injector unit 220 is one drive member is configured to raise and lower the injector unit 220, but may be separated to drive the elevating or rotating separately. Of course.

The middle plate 240 is formed with a flow path 241 communicating with an end of a supply passage (communication hole or sub supply pipe) of the supply pipe part 210 to supply powder. At this time, the end of the supply passage (communication hole or sub-supply pipe) extends to the flow passage 241 to directly communicate with the flow passage 241 to prevent the powder from being deposited on a separate component such as the sealing portion 280.

In addition, a heating means 260 is provided to vaporize the powder flowing in the flow path adjacent to the flow path 241. The heating means 260 may be any means as long as it can raise the temperature to vaporize the powder, for example, a core heater or a lamp heater may be applied. Alternatively, the position may be disposed at any position, but it may be preferably disposed at the lower portion of the flow path 241.

The flow path 241 is preferably formed long enough to sufficiently vaporize the powder flowing therein. In addition, in order to prevent the powder from stagnating in the flow path 241 and flowing back to the supply pipe part 210, the cross-sectional area of the flow path 241 is larger than the cross-sectional area of each supply path (communication hole or sub supply pipe) provided in the supply pipe part 210. It should be formed wide. Preferably, the cross-sectional area of the flow path 241 may be maintained at 140% or more relative to the cross-sectional area of each supply line (communication hole or sub-supply pipe).

In addition, the flow path 241 may be provided with at least one heat transfer member (271, 273) so that the powder receives as much energy (heat) as possible.

3A and 3B are perspective views illustrating main parts of a gas injection unit according to another exemplary embodiment of the present invention. As shown in the drawing, a mesh 271 or a ball 273 may be used.

 The powder flowing in the injector 220 is vaporized while passing through the inside of the flow path 241 heated by the heat provided by the heating means 260. At this time, the powder is in contact with the inner wall of the flow path 241 receives the heat, if the mesh type mesh 271 or the ball 273 of the heat transfer member provided on the flow path 241 flows in the flow path 241 When the powder is in contact with the heated net 271 or the ball 273, the contact area capable of receiving heat is increased to increase the vaporization rate. The powder flowing in the flow path through the heat transfer members 271 and 273 can stably vaporize. The ball 273 may be a metal ball or a ceramic ball, but it is preferable that a ceramic ball is used so that fine impurities are not generated due to contact between the balls 273.

The mesh 271 is a mesh type and the shape of the mesh is not limited and may have a constant or irregular pattern or lattice structure. In addition, the ball 273 is not limited to the spherical shape but may have various polyhedron shapes, including irregular shapes.

The nets 271 or the balls 273 may be used separately or simultaneously, respectively, and the installation position and the number of the nets 271 and the balls 273 are not limited to a specific position and number, and the type and process conditions of the powder It is desirable to apply differently accordingly.

 A flow path 241 of the middle plate 240 extends in the bottom plate 250, and a gas injection hole 251 through which the vaporized material is injected is formed at the rear end of the flow path 241.

Of course, the injector 220 may have a top plate 230, a middle plate 240, and a bottom plate 250 to facilitate the formation of the driving shaft 231, the flow path 241, and the gas injection hole 251. Although divided into three components, such as, but not limited to this, if the drive shaft 231, the flow path 241 and the gas injection hole 251 can be formed can also be made of two or more components, including one-piece. There will be.

In addition, although the injector unit 220 is provided in a bar type, the driving shaft 231, the flow path 241, and the gas injection hole 251 may be formed in any type. For example, the injector unit 220 may be formed in a disc type corresponding to the shape of the chamber 100 and the shape of the substrate support 300.

Hereinafter, an organic thin film deposition method using an organic thin film deposition apparatus equipped with a gas injection unit according to a preferred embodiment of the present invention will be described with reference.

First, when one or a plurality of substrates G are seated on the substrate support 300 in the chamber 100, the organic material powder is introduced into any one of the communication holes 213 from any one of the powder sources 217. Supplied. At this time, an inert gas is supplied to the communication hole 213 that is not selected to prevent the organic material powder being supplied from flowing backward. The supplied powder passes through the flow path 241 of the injector 220. At this time, the powder in the flow path 241 is vaporized by the heat generated by the heating means 260 disposed adjacent to the flow path 241. The vaporized organic material is injected into the substrate G through the gas injection hole 251 through the flow path 241 to form an organic thin film on the substrate G.

When the formation of the desired organic thin film on the substrate G is completed, the supply of the preceding powder is stopped, and the inert gas (purge gas) is supplied to the communication hole 213 to remain in the space where the organic material is vaporized. A purge is performed to discharge the organic material. When the purge is completed, the other organic material powder is supplied from one of the powder sources 217 to the other of the communication holes 213. At this time as well, the organic material powder is not supplied to the communication hole 213 to supply the inert gas to prevent the reverse flow of the supplied organic material powder. The supplied powder is vaporized in the middle of passing through the flow path 241 similarly to the initially supplied powder, and sprayed onto the substrate G through the gas injection hole 251 to form another organic thin film on the organic thin film formed on the substrate G. To form. Of course, after stopping the supply of the powder previously supplied to form different organic thin films, the process of purging the inside of the injector 210 as described above, and the gas remaining in the chamber 100 The process of evacuating will also proceed.

As such, the step of spraying the raw material and the purging of the vaporized space of the raw material by supplying an inert gas are repeatedly performed corresponding to the number of raw materials to form different organic thin films in the single chamber 100. can do.

Although described above with reference to the drawings and embodiments, those skilled in the art that the present invention can be variously modified and changed within the scope without departing from the spirit of the invention described in the claims below. I can understand.

1 is a conceptual diagram showing an organic thin film deposition apparatus according to the present invention,

Figure 2a is an exploded perspective view showing a gas injection device according to an embodiment of the present invention,

Figure 2b is a partial cutaway perspective view showing a gas injection device according to an embodiment of the present invention,

3A and 3B are perspective views illustrating main parts of a gas injection device according to another exemplary embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100: chamber 200: gas injection unit

210: supply pipe portion 210: injector portion

231: drive shaft 241: flow path

251: gas injection hole 260: heating means

280: sealing portion 300: substrate support

G: Substrate

Claims (13)

A supply pipe portion formed with a plurality of supply passages through which different raw materials are supplied; A injector part connected to the supply pipe part, a flow path communicating with the plurality of supply paths, and having a gas injection hole communicating with the flow path to inject gas, At least one heat transfer member is provided in the flow path further comprising a gas injection device. The method of claim 1, Gas injector, characterized in that the injector is provided with a heating means for vaporizing the raw material. The method of claim 2, The heating means is a gas injection device, characterized in that the core heater or lamp heater. The method of claim 1, The cross-sectional area of the flow path is a gas injection device, characterized in that more than 140% of the cross-sectional area of the supply passage having the minimum cross-sectional area of the plurality of supply passages. The method of claim 1, The heat transfer member is a gas injection device, characterized in that the net or ball. The method of claim 1, wherein the injector unit A top plate having a drive shaft for lifting and lowering to an upper surface thereof; A middle plate having a flow passage communicating with a supply passage of the supply pipe portion; A bottom plate having a gas injection hole communicating with the flow path at a lower surface thereof; The gas injection device, characterized in that the top plate, the middle plate and the bottom plate are sequentially stacked. A chamber, a gas injection unit provided in the chamber, a substrate support provided to face the gas injection unit, and having a substrate seated thereon; The gas injection unit, A supply pipe portion formed with a plurality of supply passages through which different raw materials are supplied; And an injector part connected to the supply pipe part, a flow path communicating with the plurality of supply paths, and an injector part communicating with the flow path to form gas injection holes. The method of claim 7, wherein The injector unit is an organic thin film deposition apparatus, characterized in that provided with a heating means for vaporizing the raw material. The method of claim 7, wherein At least one heat transfer member is provided in the flow path. The method of claim 9, The heat transfer member is an organic thin film deposition apparatus, characterized in that the net or ball. A method for depositing multiple layers of organic thin films on a substrate seated in a chamber, Supplying a raw material to any one of a plurality of communication holes provided in the gas injection apparatus according to claim 1, vaporizing the same by heating means, and then spraying the raw material; Supplying an inert gas to the gas injection device to purge the space where the raw material is vaporized; Supplying another raw material to any one of the plurality of communication holes provided in the gas injector, vaporizing the same by heating means, and then injecting the same; Supplying an inert gas to the gas injection device to purge the vaporized space of another raw material. The method of claim 11, In the step of supplying and spraying the raw material, An organic thin film deposition method characterized by supplying an inert gas in the communication hole other than the communication hole supplied with the raw material. The method of claim 11, Supplying and spraying the raw material and purging the space where the raw material is vaporized by supplying an inert gas are repeated according to the number of raw materials.

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