KR20090041312A - Organic electroluminescence device and method for manufacturing the same - Google Patents

Abstract

An organic electroluminescent device and a manufacturing method thereof are provided to prevent a property degradation of a thin film transistor by protecting the thin film transistor from X-ray in a light emitting device deposition process. A semiconductor layer is formed on a substrate(100), and includes a source region(111), a channel region(113), and a drain region(112). A gate insulation film(120) is formed on the substrate including the semiconductor layer, and has a first contact hole on the source region and the drain region. A gate electrode(114) is formed on the gate insulation film of the channel region. An interlayer insulation film(130) is formed on the gate insulation film including the gate electrode, and has a second contact hole on the source region and the drain region. A source electrode(115) and a drain electrode(116) are connected to the source region and the drain region through the first contact hole and the second contact hole. A flattened film(140) is formed on the substrate including the source electrode and the drain electrode. A first electrode(150) is connected to the drain electrode through a third contact hole. An organic light emitting layer is formed on the first electrode. A second electrode(190) is formed on the organic light emitting layer.

Description

Organic electroluminescence device and method for manufacturing the same

The present invention relates to an organic light emitting display device, and more particularly to an organic light emitting display device and a method for manufacturing the organic light emitting display device to prevent the thin film transistor from being exposed to natural light or X-ray by covering the thin film transistor with a first electrode or a blocking layer. It is about.

With the advent of the multimedia era, display devices that can express more detailed, larger, and more natural colors are required. However, the current CRT (Cathode Ray Tube) has a limit to constitute a large screen larger than 40 inches, such as organic electroluminescence device (LCD), liquid crystal display division (LCD), plasma display panel (PDP) and projection TV Television is rapidly developing to expand its use in the field of high-definition video.

The organic electroluminescent device is a device that emits light when electrons and holes are paired and then disappear when electrons are injected into the organic film formed between the cathode and the anode. Therefore, the organic light emitting display device can form a device on a transparent substrate that can be bent, such as plastic. In addition, it is possible to drive at a lower voltage (about 10V or less) than a plasma display panel or an inorganic light emitting device. In addition, the organic light emitting diode has a relatively low power consumption and excellent color, attracting attention as a next-generation display. In addition, in order to drive at a low voltage, the total thickness of the organic film is very thin and uniform, such as 100 to 200 nanometers, and it is important to maintain the stability of the device.

The organic light emitting diode is an active matrix which is driven by using a passive matrix organic light emitting diode and a thin film transistor (TFT), which are driven by a switch control of an electric signal according to a method of driving a subpixel. It is divided into (Active matrix) type organic light emitting display device.

The conventional active matrix organic light emitting display device will be described below.

Conventional active matrix organic light emitting diodes are composed of a thin film transistor formed on a transparent substrate, a planarization film formed on the entire surface of the substrate including the thin film transistor, and a light emitting element formed on the planarization layer.

The thin film transistor includes an active layer including a source region, a drain region, and a channel region, a gate insulating film formed on the entire surface of the substrate including the active layer, a gate electrode formed on the gate insulating film above the channel region, and the gate electrode. And an interlayer insulating film formed over the entire substrate, and a source electrode and a drain electrode electrically connected to the source region and the drain region and formed on the interlayer insulating layer.

The light emitting device includes an anode electrode electrically connected to the drain electrode of the thin film transistor and formed on the planarization layer, an organic light emitting layer formed on the anode electrode, and a cathode electrode formed on the organic light emitting layer.

The organic light emitting layer includes a hole transporting layer, an R (Red), G (Green) and B (Blue) light emitting layer, and an electron transporting layer. The hole transport layer may include a hole injection layer and a hole transport layer, and the electron transport layer may include an electron transport layer and an electron injection layer.

However, the above-described conventional organic electroluminescent device has the following problems.

1 is a view showing that the electrical characteristics of a transistor in an organic light emitting display device are changed by external light.

As shown in FIG. 1, the organic light emitting diode when the external light is turned on is aged, rather than being aged when the external light is off. Deteriorating characteristics. That is, when external light is irradiated to the active layer or the like of the thin film transistor, characteristics such as leakage current are lowered than when external light is not irradiated.

In addition, the thin film transistor may be exposed to X-rays or the like in a deposition process of the light emitting device (anode electrode, organic light emitting layer, and cathode electrode) to cause damage to the thin film transistor, and electrical contact between the drain electrode and the anode electrode may be reduced. Can be degraded.

The present invention is to solve the above conventional problems, to protect the thin film transistor from external light, and to prevent the thin film transistor from being exposed to the X-ray in the light emitting device deposition process can prevent the degradation of the thin film transistor characteristics. An object of the present invention is to provide an active matrix organic light emitting display device and a method of manufacturing the same.

An organic light emitting display device according to the present invention for achieving the above object, the substrate; A semiconductor layer having a source region, a channel region, and a drain region formed on the substrate; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; A source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to a source region and a drain region through the first and second contact holes; A planarization layer having a third contact hole on the drain electrode and formed on an entire surface of the substrate including the source electrode and the drain electrode; A first electrode electrically connected to the drain electrode through the third contact hole and formed on the planarization layer to cover the semiconductor layer; An organic light emitting layer formed on the first electrode; And a second electrode formed on the organic light emitting layer.

In addition, the organic light emitting device according to the present invention for achieving the above object, a transparent substrate; A semiconductor layer having a source region, a channel region, and a drain region formed on the substrate; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; A source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to a source region and a drain region through the first and second contact holes; A planarization layer having a third contact hole on the drain electrode and formed on an entire surface of the substrate including the source electrode and the drain electrode; A first electrode formed on the planarization layer to be electrically connected to the drain electrode through the third contact hole; A blocking layer formed to cover the semiconductor layer above or below the first electrode; An organic light emitting layer formed on the first electrode; In addition, the second electrode is formed on the organic light emitting layer.

In addition, the organic light emitting display device according to the present invention for achieving the above object comprises a display area having a plurality of cells, each cell having a first transistor and a light emitting element, and driving each cell of the display area. In an organic light emitting display device, which is divided into a non-display area having a second transistor, the light emitting device includes a first electrode, a light emitting layer, and a second electrode, and the first electrode is the first and second transistors. There is another feature in that it is formed to cover.

On the other hand, the organic electroluminescent device manufacturing method according to the present invention for achieving the above object comprises the steps of: forming a semiconductor layer on a substrate having a source region, a channel region and a drain region; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; Selectively removing the gate insulating film and the interlayer insulating film to form first contact holes in the source and drain regions; Forming a source electrode and a drain electrode on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first contact hole; Forming a planarization film on an entire surface of the substrate including the source electrode and the drain electrode; Selectively removing the planarization layer to form a second contact hole on the drain electrode; Forming a first electrode on the planarization layer to be electrically connected to the drain electrode through the second contact hole and to cover the semiconductor layer; Forming an organic emission layer on the first electrode; And forming a second electrode on the organic light emitting layer.

In addition, a method of manufacturing an organic light emitting display device according to the present invention for achieving the above object comprises the steps of: forming a semiconductor layer on a transparent substrate having a source region, a channel region and a drain region; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; Selectively removing the gate insulating film and the interlayer insulating film to form first contact holes in the source and drain regions; Forming a source electrode and a drain electrode on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first contact hole; Forming a planarization film on an entire surface of the substrate including the source electrode and the drain electrode; Selectively removing the planarization layer to form a second contact hole on the drain electrode; Forming a first electrode on the planarization layer to be electrically connected to the drain electrode through the second contact hole; Forming a blocking layer on the upper or lower side of the first electrode to cover the semiconductor layer; Forming an organic emission layer on the first electrode; And forming a second electrode on the organic light emitting layer.

Referring to the effects of the organic light emitting display device and a method of manufacturing the same according to the present invention.

First, the thin film transistor may be protected from X-rays or the like generated in the deposition process of the light emitting layer, etc. during the manufacturing process of the organic light emitting device.

Second, in the active matrix type organic light emitting device, the electrical characteristics of the thin film transistor can be preserved from sunlight and the like.

Hereinafter, the organic light emitting display device and the manufacturing method thereof according to the present invention having the above characteristics will be described in detail with reference to the accompanying drawings.

2 is a diagram schematically illustrating a transistor and a first electrode (anode electrode) in a non-light emitting region of the organic light emitting display device according to the present invention.

As shown in FIG. 2, the first electrode of the light emitting device covers the transistor Tr. Here, the thin film transistor includes a source region, a drain region, a channel region, and the like.

3 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention. An embodiment of an organic light emitting display device according to the present invention will be described with reference to FIG. 3.

The active matrix type organic light emitting display device according to the first exemplary embodiment of the present invention includes a plurality of thin film transistors 110, a planarization film 140, and light emitting devices 150, 160, 165, 170, 180, and 185 on a substrate 100. 190 is provided.

Here, the substrate 100 may be formed of a transparent substrate such as glass, quartz or sapphire, or may be formed of other non-transparent substrates. Although not shown in the drawing, an insulating layer is formed between the transparent substrate 100 and the thin film transistor 110 to prevent various impurities in the substrate from penetrating into the active layer of the thin film transistor.

The thin film transistor 110 is configured as follows.

That is, an active layer formed on the substrate 100 having a source region 111, a drain region 112, and a channel region 113, a gate insulating layer 120 formed on the entire surface of the substrate including the active layer, A gate electrode 114 formed on the gate insulating layer 120 above the channel region 113, an interlayer insulating layer 130 formed on an entire surface of the substrate including the gate electrode 114, and the source region 111. And a contact hole is formed in the gate insulating film 120 and the interlayer insulating film 130 so that a predetermined portion of the drain region 112 is exposed, and the interlayer is electrically connected to the source region 111 and the drain electrode 112. A thin film transistor is formed by including a source electrode 115 and a drain electrode 116 formed on the insulating layer 130.

The source electrode 115 and the drain electrode 116 include Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum), It is made of a material selected from the group consisting of AlNd (Almineri 윰), and has a thickness of 200 to 500 nanometers.

The planarization layer 140 is formed on the entire surface of the transparent substrate 100 including the thin film transistor 110 to planarize the pixel region. Here, the planarization layer 130 may be made of an organic insulating material such as an acryl-based organic compound, polyimide, BCB (Benzo Cyclo Butene) or PFCB, or may be made of an inorganic insulating material such as silicon nitride. have.

In addition, a contact hole is formed in the planarization layer 140 on the drain electrode 116 so that the first electrode 150 of the light emitting device to be described later is electrically connected to the drain electrode 116.

The first electrode 150 of the light emitting device may be formed on the planarization layer 140 to be electrically connected to the drain electrode 116 through the contact hole. Here, the first electrode 150 may block light and may be formed of a single layer or a multi-layered metal layer to protect the thin film transistor from X-rays when forming a light emitting layer and a second electrode which will be described later. As the material of the first electrode 150, Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum) ), Al (aluminum), and one or more of AlNd (almineri 윰) and W (tungsten) are selected to form a multilayer structure. It is preferable that the thickness and the material of the first electrode 150 not only block natural light but also have an X-ray transmittance of 0.001 to 1.0%.

Accordingly, the first electrode 150 extends above the thin film transistor to cover the thin film transistor (especially, the active layer of the thin film transistor). In addition, the material of the first electrode 150 is formed to cover the thin film transistor of the non-light emitting region (not shown in the figure, the driving unit, etc.).

Therefore, since the first electrode 150 covers the thin film transistor, it is possible to prevent the thin film transistor from being exposed to natural light or X-ray, thereby deteriorating the characteristics of the thin film transistor.

The pixel isolation layer 155 is formed between the cell regions on the planarization layer 140. Here, the pixel isolation layer may be made of an inorganic insulating material such as silicon nitride film Sin _x or silicon oxide film SiO ₂ .

The organic emission layer and the second electrode 190 are sequentially formed on the pixel isolation layer 155 and the first electrode 150.

The organic emission layer may include a hole injection layer 160, a hole transfer layer 165, an emission layer 170, an electron transfer layer 180, and an electron injection layer. layer 185 is sequentially stacked. The second electrode 190 of the organic light emitting diode is stacked on the organic light emitting layer.

Here, the electron transport layer 180 is provided between the light emitting layer 170 and the second electrode 190, so that most of the electrons injected from the second electrode 190 into the light emitting layer 170 are recombined with holes. In order to move toward the first electrode 150. In addition, a hole transporting layer 160 is provided between the first electrode 150 and the light emitting layer 170, and electrons injected into the light emitting layer 170 are blocked at an interface with the hole transporting layer 160 and no longer have a first electrode. Recombination efficiency may be improved because the light emitting layer 170 does not move toward 150 and exists only in the light emitting layer 170.

Here, the stacking order of the organic light emitting layer may be configured in reverse. That is, an electron injection layer, an electron transfer layer, an emitting layer, a hole transfer layer, and a hole injection layer are sequentially formed on the first electrode 150. The second electrode 190 may be stacked on the hole injection layer.

4 is a cross-sectional view of a structure of an organic light emitting display device according to a second exemplary embodiment of the present invention.

The difference between the organic light emitting display device according to the second embodiment of the present invention and the organic light emitting display device according to the first embodiment of the present invention described in FIG. 3 is that the first electrode is formed of a transparent conductive layer and the second electrode is formed. A metal layer is formed, and a blocking layer 200 for blocking natural light or X-rays is further formed on the upper or lower side of the first electrode to cover the thin film transistor. The rest of the configuration of the organic light emitting display device according to the second embodiment of the present invention is the same as that of the organic light emitting display device according to the first embodiment of the present invention described with reference to FIG. 3.

That is, the thin film transistor 110 including the active layer, the gate electrode 114, and the source / drain electrodes 115 and 116 as described above is formed on the transparent substrate 100 such as glass, quartz, or sapphire. The planarization layer 140 is formed on the entire surface of the transparent substrate 100 including the thin film transistor 110 to planarize the pixel region.

A contact hole is formed in the planarization layer 140 on the drain electrode 116 so that the first electrode 150 of the light emitting device to be described later is electrically connected to the drain electrode 116.

The first electrode 150 of the light emitting device electrically connected to the drain electrode 116 through the contact hole is formed on the planarization layer 140, and the thin film transistor is disposed above or below the first electrode 150. Blocking layer 200 is formed to cover.

Here, the first electrode 150 is formed of a transparent conductive film that transmits light, such as indium-tin-oxide (ITO) or indium-zinc-oxide (IZO), and the blocking layer 200 may block light. It may be formed of a single layer or a multi-layer metal layer to protect the thin film transistor from the X-ray when forming the light emitting layer and the second electrode to be described later. Materials of the blocking layer 200 include Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum) , Al (aluminum) and one or more of AlNd (almineri 윰) and W (tungsten) are selected to form a multilayer structure. The thickness and material of the blocking layer 200 preferably block natural light and have an X-ray transmittance of 0.001 to 1.0%.

Therefore, the blocking layer 200 is formed to cover the thin film transistor (particularly, the active layer of the thin film transistor), and the material of the blocking layer 200 is a non-light emitting region (not shown in the drawing, a driving part, etc.). Is formed to cover the thin film transistor.

Therefore, since the blocking layer 200 covers the thin film transistor, it is possible to prevent the thin film transistor from being exposed to natural light or X-ray, thereby deteriorating the characteristics of the thin film transistor.

In addition, the organic light emitting layer and the second electrode 190 are sequentially formed on the first electrode 150.

Here, the second electrode is formed of a metal layer.

Hereinafter, the manufacturing method of the organic light emitting display device according to the first embodiment of the present invention will be described.

5A to 5E are cross-sectional views of an organic light emitting display device according to a first embodiment of the present invention.

As shown in FIG. 5A, a transparent substrate 100 made of glass, quartz, sapphire, or the like is prepared. An amorphous silicon film is deposited on the transparent substrate 100 to a thickness of about 200 to 800 angstroms by low pressure chemical vapor deposition or plasma enhanced chemical vapor deposition. Form. The amorphous silicon film is crystallized into polycrystalline silicon by a method such as laser annealing. Of course, instead of the amorphous silicon film, a polycrystalline silicon film may be deposited immediately.

Subsequently, the polycrystalline silicon is patterned by a method such as a photolithography process to form the active layer 113a of the thin film transistor in the unit pixel. The gate insulating layer 120 is deposited on the entire surface of the substrate including the active layer 113a.

As shown in FIG. 5B, a gate electrode 114 is formed on the gate insulating layer 120 above the active layer 113a. That is, aluminum-neodynium (AlNd) or the like is deposited on the gate insulating layer 120 to a thickness of about 1500 to 5000 angstroms by sputtering, and then the aluminum-neodynium (AlNd) is patterned by a photolithography process to form a gate. An electrode 114 is formed.

Using the gate electrode 114 as a mask, impurity ions are implanted into the active layer 113a and the implanted impurity ions are activated to form the source region 111 and the drain region 112 of the thin film transistor. In this case, impurity ions are not implanted into the active layer 113a under the gate electrode 114 so that a channel region 113 is naturally formed.

An interlayer insulating layer 130 is formed on the entire surface of the substrate including the gate electrode 114 using a silicon oxide film or a silicon nitride film.

As shown in FIG. 5C, the gate insulating layer 120 and the interlayer insulating layer 130 are selectively removed so that the source region 111 and the drain region 112 are exposed to form contact holes.

In addition, a source electrode 115 and a drain electrode are electrically connected to the source region 111 and the drain region 112 by depositing at least one metal layer on the interlayer insulating layer 130 and removing the metal layer by a photolithography process. 116 is formed.

As shown in FIG. 5D, the planarization layer 140 is formed on the entire surface of the interlayer insulating layer 130 including the thin film transistor 110. Here, the planarization film 140 is for planarization of the first electrode of the light emitting device to be formed next, and is formed by depositing an organic or inorganic insulating material to a thickness of about 1000 to 5000 angstroms.

The planarization layer 140 is etched by a photolithography process to form a contact hole exposing one of the source electrode 115 and the drain electrode 116 (in the drawing, the contact hole is formed in the drain electrode 116). Shown).

The first electrode 150 is formed on the planarization layer 140 to be electrically connected to the drain electrode 116 through the contact hole and to cover the thin film transistor.

The process of forming the first electrode 150 will be described in detail as follows.

That is, Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantarum), Al (aluminum), AlNd ( A material of at least one of Almineri 윰) and W (tungsten) or at least two material layers are deposited, and the material layer is selectively removed by a photolithography process to form the first electrode 150.

 By controlling the thickness and the number of stacked layers of the first electrode 150, the light is shielded and formed to have an X-ray transmittance of 0.001 to 0.1%.

An inorganic insulating film made of a silicon nitride film, a silicon oxide film, or the like is deposited on the entire upper surface of the resultant to a thickness of about 1000 to 2000 angstroms, and patterned so as to remain only between the pixel areas, thereby forming the pixel isolation film 155.

As shown in FIG. 5E, a hole injection layer 160, a hole transport layer 165, an emission layer 170, an electron transport layer 180, and an electron injection layer 185 may be disposed on the entire surface of the substrate including the first electrode 150. Sequentially stacked to form an organic light emitting layer. Subsequently, the second electrode 190 of the organic light emitting diode having a predetermined thickness is formed on the entire upper surface of the resultant product.

Here, the hole injection layer 160 is formed by depositing copper phthalocyanine (CuPC) to a thickness of 10 to 30 nanometers. And, the hole transport layer 165 is 4,4'-qltm [N- (1-naphthyl) -N-phenylamino] biphenyl (4,4'-bis [N- (1-naphthyl) -N-phenthylamino ] -biphenyl (NPB) is formed by depositing a thickness of 30 to 60 nanometers, and the light emitting layer 170 is formed of an organic light emitting material according to red, green, and blue pixels, and is formed by adding a dopant as necessary. do.

Here, at least one process of forming the organic light emitting layer and the second electrode is deposited by using an electron beam (X-ray).

The reason for forming the organic light emitting layer and the second electrode using the electron beam is to improve the light emission characteristics of the organic light emitting layer by performing the process in the same chamber. That is, when the organic light emitting layer is deposited and the second electrode is deposited by the sputtering method by moving to a sputtering equipment, the organic light emitting layer is exposed to the air, thereby deteriorating light emission characteristics, or the deposition process is complicated.

In the organic light emitting layer and the second electrode forming process, the active layer of the thin film transistor is covered by the first electrode 150 even when using an electron beam, thereby preventing damage to the active layer of the thin film transistor by X-rays. can do.

The present invention is not limited to the above-described embodiments, and such modifications are included in the scope of the present invention even if modifications are possible by those skilled in the art to which the present invention pertains.

The organic light emitting diode and the method of manufacturing the same according to the present invention can contribute to improving the performance and extending the life of the organic light emitting diode by preserving the characteristics of the thin film transistor in the manufacturing process and the finished product.

1 is a graph showing that electrical characteristics of a transistor in an organic light emitting diode are changed by external light.

2 is a cross-sectional view schematically showing a transistor and a first electrode (anode electrode) in a non-emitting region of an organic light emitting display device according to the present invention.

3 is a cross-sectional view of an organic light emitting display device according to a first embodiment of the present invention.

4 is a cross-sectional view of an organic light emitting display device according to a second exemplary embodiment of the present invention.

5A to 5E are cross-sectional views of an organic light emitting display device according to a first embodiment of the present invention.

<Explanation of symbols for the main parts of the drawings>

100 substrate 110 thin film transistor

111: source region 112: drain region

113: channel region 114: gate electrode

115: source electrode 116: drain electrode

120 gate insulating film 130 interlayer insulating film

140 planarization film 150 first electrode

155: pixel separation layer 160: hole injection layer

165: hole transport layer 170: light emitting layer

180: electron transport layer 185: electron injection layer

190: second electrode 200: blocking layer

Claims (17)

Board; A semiconductor layer having a source region, a channel region, and a drain region formed on the substrate; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; A source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to a source region and a drain region through the first and second contact holes; A planarization layer having a third contact hole on the drain electrode and formed on an entire surface of the substrate including the source electrode and the drain electrode; A first electrode electrically connected to the drain electrode through the third contact hole and formed on the planarization layer to cover the semiconductor layer; An organic light emitting layer formed on the first electrode; And An organic light emitting device, characterized in that it comprises a second electrode formed on the organic light emitting layer. The method of claim 1, The first electrode is Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum), Al (aluminum) And one or at least two selected from AlNd (Almineri 윰) and W (tungsten) to form a single layer or a multilayer structure. The method of claim 1, The first electrode has an X-ray transmittance of 0.001 to 1.0%. Transparent substrates; A semiconductor layer having a source region, a channel region, and a drain region formed on the substrate; A gate insulating film having a first contact hole on the source region and the drain region and formed on the substrate including the semiconductor layer; A gate electrode formed on the gate insulating layer above the channel region; An interlayer insulating layer having a second contact hole on the source region and the drain region, and formed on an entire surface of the gate insulating layer including the gate electrode; A source electrode and a drain electrode formed on the interlayer insulating layer to be electrically connected to a source region and a drain region through the first and second contact holes; A planarization layer having a third contact hole on the drain electrode and formed on an entire surface of the substrate including the source electrode and the drain electrode; A first electrode formed on the planarization layer to be electrically connected to the drain electrode through the third contact hole; A blocking layer formed to cover the semiconductor layer above or below the first electrode; An organic light emitting layer formed on the first electrode; And An organic light emitting device, characterized in that it comprises a second electrode formed on the organic light emitting layer. The method of claim 4, wherein The barrier layer comprises Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum), Al (aluminum) and AlNd An organic electroluminescent device characterized in that one or at least two selected from (amineliner) and W (tungsten) are formed in a single layer or a multilayer structure. The method of claim 4, wherein The blocking layer is an organic light emitting device, characterized in that having an X-ray transmittance of 0.001 ~ 1.0%. The method of claim 4, wherein The first electrode is an organic light emitting display device, characterized in that formed of Indium-Tin-Oxide (ITO) or Indium-Zinc-Oxide (IZO). In an organic light emitting display device having a plurality of cells, each cell is divided into a display area including a first transistor and a light emitting element, and a non-display area including a second transistor for driving each cell of the display area. , The light emitting device includes a first electrode, a light emitting layer, and a second electrode, and the first electrode is formed to cover the first and second transistors. The method of claim 8, The first electrode includes Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum), Al (aluminum) and An organic light emitting device, characterized in that one or at least two selected from AlNd (Almineri 윰), W (tungsten) is formed in a single layer or a multi-layer structure. The method of claim 8, The first electrode has an X-ray transmittance of 0.001 to 1.0%. Forming a semiconductor layer on the substrate having a source region, a channel region and a drain region; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; Selectively removing the gate insulating film and the interlayer insulating film to form first contact holes in the source and drain regions; Forming a source electrode and a drain electrode on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first contact hole; Forming a planarization film on an entire surface of the substrate including the source electrode and the drain electrode; Selectively removing the planarization layer to form a second contact hole on the drain electrode; Forming a first electrode on the planarization layer to be electrically connected to the drain electrode through the second contact hole and to cover the semiconductor layer; Forming an organic emission layer on the first electrode; And And forming a second electrode on the organic light emitting layer. The method of claim 11, The first electrode is Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum), Al (aluminum) And one or at least two of AlNd (Almineri 윰) and W (tungsten) to form a single layer or a multilayer structure. The method of claim 11, The method of manufacturing an organic light emitting display device, characterized in that formed to have an X-ray transmittance of 0.001 ~ 1.0% by controlling the material and thickness of the first electrode. Forming a semiconductor layer on the transparent substrate having a source region, a channel region and a drain region; Forming a gate insulating film on the substrate including the semiconductor layer; Forming a gate electrode on the gate insulating layer above the channel region; Forming an interlayer insulating film on an entire surface of the gate insulating film including the gate electrode; Selectively removing the gate insulating film and the interlayer insulating film to form first contact holes in the source and drain regions; Forming a source electrode and a drain electrode on the interlayer insulating layer to be electrically connected to the source region and the drain region through the first contact hole; Forming a planarization film on an entire surface of the substrate including the source electrode and the drain electrode; Selectively removing the planarization layer to form a second contact hole on the drain electrode; Forming a first electrode on the planarization layer to be electrically connected to the drain electrode through the second contact hole; Forming a blocking layer on the upper or lower side of the first electrode to cover the semiconductor layer; Forming an organic emission layer on the first electrode; And And forming a second electrode on the organic light emitting layer. The method of claim 14, The barrier layer comprises Ti (titanium), Mo (molybdenum), Cr (chromium), Cu (copper), Au (gold), Ni (nickel), Ag (silver), Ta (tantalum), Al (aluminum) and AlNd A method of manufacturing an organic light emitting display device, wherein one or at least two of (aminemine) and W (tungsten) are selected to form a single layer or a multilayer structure. The method of claim 14, The blocking layer is a method of manufacturing an organic light emitting display device, characterized in that formed to have an X-ray transmittance of 0.001 ~ 1.0% by adjusting the material or thickness of the blocking layer. The method of claim 14, The first electrode is a method of manufacturing an organic light emitting display device, characterized in that formed of Indium-Tin-Oxide (ITO) or Indium-Zinc-Oxide (IZO).

Images