KR20090026266A - Method and apparatus for chemical mechanical polishing of large size wafer with capability of polishing individual die - Google Patents

Abstract

A novel polisher for chemical mechanical planarization process is described. The polisher design can have many variations. For process development and consumable evaluation, the CMP process can be performed on a single die or a section of the wafer. The size of testing wafer can be as small as 2'' and as large as 18''. Furthermore, several variations can characterize the slurry for their static etch rate, dynamic etch rate, material removal rate, and viscosity in a single experiment. For production level wafer processing, Chemical Mechanical Polishing of all dies on the wafer surface is achieved by using multi-armed polishing heads or a single polishing head with small piece of a pad at the bottom of the head. The within wafer uniformity can be easily controlled and the equipment can be easily scaled up or down. This inventive design may translate to significant cost reduction for wafer processing at production level as well as evaluation of consumables at research and development level.

Description

METHOD AND APPARATUS FOR CHEMICAL MECHANICAL POLISHING OF LARGE SIZE WAFER WITH CAPABILITY OF POLISHING INDIVIDUAL DIE}

Reference of related application

Prior documents and all documents cited or pending herein ("application cited documents") and all documents cited or referenced in the cited documents, all documents cited or referenced herein " The documents cited herein "), and all documents cited or referenced in the documents cited herein, together with the manufacturer's instructions, specifications, and product specifications, product sheets for the products referred to herein or incorporated herein by reference. The documents are incorporated herein by reference and are employed to practice the present invention.

The present invention relates to a method of chemical mechanical polishing (CMP) for microelectronics applications. In particular, the present invention relates to an apparatus for chemical mechanical polishing used for large pattern / blanket wafer polishing, a process capable of polishing individual dies at once, and a method and process evaluation for chemical mechanical polishing of slurry.

Chemical mechanical polishing has become an essential technique for the manufacture of recording heads for semiconductor devices and hard disk drivers. In a typical chemical mechanical polishing (CMP) process, the wafer to be polished is fixed by a rotating carrier or polishing head, the pad is mounted on a rotating plate or table, and the slurry is transferred into the space between the wafer and the pad. Generally, the wafer, blanket or pattern has a thin film of metal, oxide, polysilicon or other material. Polyurethane pads with grooves and asperties on the surface bring the slurry into contact with the wafer and take residues removed from the polish area. Slurries containing abrasives, oxidizers, composites, inhibitors, passivating agents, surfactants and having an appropriate pH provide a chemical reaction to soften the wafer surface and remove the reacted layer by abrasive particles. Slurry-free slurries are known (US Pat. Nos. 6,800,218 and 6,451,697) in which abrasive particles and surfactants used to stabilize the colloidal system are removed.

CMP devices or CMP polishers are equipment for realizing the CMP process. Conventional CMP polishers mainly comprise three parts; It consists of a carrier, platen and slurry conveyer. In addition to securing the wafer, the carrier also provides the ability to rotate the wafer and adjust the downward force and the back pressure. The platen rotates the pad to polish the wafer, which is generally located below the wafer to be polished. In an orbital CMP polisher, the pads have orbital motion, so each point on the pad is represented by a circle along the orbit. The relative movement between the wafer and the pad is important for even material removal from every point on the wafer surface. Ideally, one would expect to achieve the same or similar speed for each point on the wafer relative to the pad, which would be realized by maintaining the same direction of rotation with the same or similar rotational speed for the carrier and platen in the rotating polisher. Can be. Conventional polishers are designed to polish the entire wafer.

It is generally accepted that even polishing of the entire wafer in a manufacturing environment is a prerequisite for achieving the desired global flatness. For consumables such as a simple assessment of a CMP process or slurry, it is desirable to polish only a small portion of the wafer to save costs using the entire wafer through a single assessment. This is often accomplished using small bench top polishers and small pattern wafers (ie 2 "diameter) cut from large wafers (ie 8"). Due to practical difficulties in the fabrication of 2 "wafers with smooth edges, only 4 to 5 2" wafers can be produced from a single 8 "wafer. In addition, only one on a 2" wafer produced by this method Only die is available. Other motivations to adopt this approach increase the cost and complexity of the entire wafer or manufacturing polisher. Therefore, a polisher capable of polishing a small portion of the wafer without cutting the wafer into small pieces is an evaluable tool for CMP processing and consumable evaluation. The present invention provides the polisher design of the present invention on these issues.

If chemical mechanical polishing is first adopted for wafer processing by the semiconductor industry, the wafer size is 2 to 6 "diameter. Traditional silicon grinder / polisher designs are essentially adopted without modification. In fact, CMP dielectric It has been widely known that the base platform has not actually changed in the last 20 years as it is adopted for wafer processing such as metal and copper planarization, and the increase in wafer size, number of scale up issues becomes more apparent. In order to maintain internal wafer inequality, considerable effort is required and complex schemes have to be performed in place As the slurry residue time increases, the temperature profile under the wafer during polishing is quite different compared to small wafers. At the global level without harsh polishing at the phosphorus level Optimizing flatness is quite difficult, and at low levels, compromise poses a big threat to defects at high levels, which will be more severe for only 450mm wafers and beyond, that is, a significant increase in wafer size. With the challenge of maintaining wafer uniformity and defects, the conventional design is no longer the best choice The invention provides a new polisher that can meet the challenges of large wafer processing while maintaining control at local and global flatness. A set of designs is provided to meet this need.

Unlike the design in the conventional polisher, the new design described in the present invention focuses on each individual die that needs to be processed. In other words, there are many small arms working in parallel on different dies in at least one of the designs. In accordance with the present invention, aspects other than those described above are not limited to the following examples, but include, but are not limited to, multi-arm apparatuses with slurry for securing wafers, polish heads for securing pads, slurry carriers, pressure It is achieved by a device consisting of a regulator, a separate pad conditioning disk, a portion for collecting the used slurry, and a motor for driving the polish head and the drain for the used slurry. As with the above-mentioned variations of the design, small sections of a wafer containing multiple dies can be polished together. If some such sections are specifically polished, the entire wafer is processed simultaneously. Like variations of the design mentioned above, large portions of the wafer can be polished using pads similar to wafers in size. Such devices include the necessary sensors to report information such as slurry viscosity, static etch rate, dynamic etch rate, polishing rate at low falling force, and friction between the pad and the initial contact wafer. The main use of such devices is to provide useful information about the features and performance of consumable products such as slurries and pads.

Another embodiment of the present invention is a method of manufacturing a semiconductor device. This method is accomplished using the present invention and slurry to planarize a thin film by CMP on a wafer, such as a Cu or Cu alloy film on a dielectric layer, an oxide, a barrier layer, or a low material on a wafer surface.

A third embodiment of the present invention is an effective and effective method for achieving planarization on selected surfaces on a wafer surface or an entire wafer.

In the embodiment of the present invention as shown in FIG. 1, the wafer is fixed on a platen fixedly positioned under multiple arms with a polish head, while pads are attached to this polishing head. Pad selection is primarily based on the film to be polished (copper, dielectric, barrier, metal, etc.). There will be multiple sets of such polishing heads. Therefore, one set is in operation of polishing, and the other set can be matched or exchanged. This eliminates or significantly reduces tool down time. If it is desired, the wafer may be covered by a specially designed mask (see FIG. 2) with the same number of windows as in the die on the wafer. These windows can be opened if the die located in the window is polished or the membrane is protected by a sheath.

Terms such as "comprises", "comprised", "comprising", etc., as used specifically herein and in the claims and / or paragraphs, may have the meanings defined in United States patent law. have; That is, the terms may have the meaning of "includes", "included", "including", and the like; Terms such as "consisting essentially of" and "consists essentially of" may have the meanings defined in United States patent law; That is, these terms allow the elements not to be explicitly enumerated and not to exclude elements found in the prior art or elements affecting the basic or new features of the present invention.

Additional embodiments of the present invention will be apparent to those skilled in the art as will be apparent from the following detailed description, in which embodiments of the invention are described by way of explanation of the best mode for carrying out the invention. As will be realized, the present invention may be embodied as other embodiments and various and obvious modifications may be made without departing from the invention. Accordingly, the drawings and specification are intended to illustrate the invention and are not restrictive.

1 shows the overall design of a polisher with multiple polishing heads.

2 is a schematic view of a polishing head.

3 is a schematic representation of a wafer holder and mask for a patterned wafer.

4 is a schematic of a single arm pad resting on a conventional die.

5 is a schematic representation of a slurry conveyer.

6 shows the overall design of a polisher with a single polishing head.

7 shows the overall design of a polisher with a single polishing head (side).

8 is a schematic view of a single polishing head.

9 is a schematic view of a disk for fixing the polishing head.

10 is a schematic view of a cam driving a pad holder.

11 is a schematic representation of an 8 "wafer holder.

12 is a schematic representation of a slurry evaluator.

13 shows the capability of a six axis maglev step for photolithographic applications.

14 illustrates the basic principles of using flotation techniques to measure the viscosity of a fluid.

15 shows a simulation of material removal rate versus inner plate distance between pad and wafer.

16 is a schematic view of a polisher using a polishing tape.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention utilizes large wafers 12 " and 18 utilizing the ability of polished individual dies to be processed that can easily adjust internal wafer uniformity while providing advantages over conventional CMP polishers. ", And more) effective and effective planarization can be achieved.

The design of the present invention differs significantly from conventional polishers by focusing on each individual die that needs to be processed. Aspects of the invention may be practiced by employing a single polishing head with pads or multiple arms with a polishing head to process one die or multiple dies on a wafer surface. In addition, the wafer is static. Conventional CMP polishers employ a large single pad, with only a portion of the pad being used as the polishing area. Using this platform, it is difficult to process large wafers without increasing the pad size and the footprint of the polisher. The present invention overcomes this difficulty by changing the relative position of the wafer and the pad and employing a set of polishing heads each having a small pad. Therefore, the footprint of the polisher according to the invention is only about 1/20 of the size of a conventional polisher. In addition, the wafer holder can be easily upgraded to accommodate large wafers. In particular, the new polisher can be reduced to polish 2 " wafers and handle 18 " wafers without additional cost. As a result of such scalability, the cost of holding such polishers is considerably lower compared to conventional polishers. Without providing the motion of large platens and heavy wafer carriers, the energy consumption by the new polisher will be significantly lower than encountered in conventional designs.

One of the embodiments of the present invention is achieved by many small arms with small pieces of pads at the bottom working in parallel on each die as shown in FIG. These arms are secured to a disk with the same number of holes as in the die on the wafer as shown in FIG. Each arm corresponds to a hole, and the arm can be fixed or removed depending on the processing requirements of the die corresponding to the hole. The disc is driven by a motor with a mechanical rod to perform the vibratory motion. Therefore, each pad will also move in the same way on the corresponding die surface as shown in FIGS. 3 and 4. 4 also shows the motion of a single pad on a conventional die, which is mechanically controlled or computer programmed such that the relative velocity and center position between the pad and the wafer changes during polishing. The net average effect of this deformation allows each location on the wafer to experience the polishing tape from all directions.

As shown in FIG. 5, the slurry is individually supplied to each die on the pattern wafer and the slurry transport can be stopped as needed. The slurry collector is designed around the wafer holder to collect the used slurry in case the used slurry needs to be collected for further analysis. Operation of the polishing process of the present invention is performed on a new polisher that is inclined to provide good slurry hydromechanics on the wafer surface, although not limited to the following examples. The tilting of the present invention can be obtained by an adjustable leg having a height that can be adjusted to the required level, but not limited to the following examples. The angle of the inclined wafer surface may be between 10 degrees and 45 degrees. Pressure regulation is realized by a pressure regulating cell at the end of each arm. The matching of the pads can be performed by replacing the wafer with a roughening disk having the same size as the wafer after every operation, although not limited thereto.

Another example of embodiments of the present invention uses a single polish head and wafer holder as shown in FIG. 6. The position of the polish head and the wafer can be adjusted by adjusting the lever in the X axis direction and the Y axis direction, respectively. The detailed design of the two positioning levers is shown schematically in FIGS. 10 and 12. The combination of the two adjustable levers allows the polish head to reach a desired die that must be polished on the wafer surface. The policy head is connected to the motor, which is located in a container fixed to an adjustable lever. During the polishing process the downward force can be regulated by several pressure control cells inside the polish head as shown in FIG. As shown in Fig. 8, the disk holding the pad moves along a small orbit with a radius of 3-10 mm, whereby the relative speed between each point and the polish on the pad is the same on the wafer surface. The relative speed between the pad and the wafer can be adjusted by varying the motor speed as well as the radius of the track. The orbital motion of the pad can be achieved by a cam having a center eccentric with the axis of the motor, as not limited to the following example. The wafer holders may be of different sizes for wafers that are interchangeable and of different sizes as shown in FIG. 10. Thus, the positioning levers for the polish head as well as the wafer are interchangeable according to the requirements of the wafer size. But only one polisher is used. The matching of the pads is located near the wafer holder and its position is achieved by a separate conditioning disk which can be given by the polish head adjustment lever (Fig. 10). For the blanket wafer, seven polish regions are given on the wafer surface as a whole; Ten policy regions are given for the pattern wafer. In this way, wafer utilization is effectively and effectively improved. During the polishing process, only the polish area on the wafer surface is opened and the remaining area is covered and protected by a specially designed mask. In addition, a slurry collection channel is given around the wafer holder to collect the slurry used for further analysis. The tilting of the present invention can be obtained by an adjustable leg having a height that can be adjusted to the required level, but not limited to the following examples.

In an embodiment of the present invention, a single arm may have various types of pads such as, for example, hard pads for copper polishing and soft pads for barrier polishing. It would not be necessary to have multiple plates. Significant savings in space can be obtained, resulting in increased productivity. Since each individual die is polished separately, there is no contamination problem between the dies. Defects that call for reality will be local. There will be no propagation of defects that typically occur on conventional polishers.

One variation on the polishing head is to replace the conventional solid rigid pad with a softer, more flexible polishing tape as shown in FIG. There are several advantages of using tape instead of polishing pads. The tape can be made to include various chemical components such as soft wear materials, releasable chemicals, surfactants, and the like. Polishing performance can be improved by the presence of these components in the field. It is easier to clean, clean and recycle the polishing tape. The operation of the polisher using the polishing tape can be made more automated and continuous. There are two further variations when a polishing tape is used. One is to use a roller to fix and guide the polishing tape. The lowering force and the relative polishing speed are determined by the lateral movement of the roller. As the absolute contact area between the roller and the wafer is relatively small, the roller will move laterally to increase the contact surface area.

The speed of rotation will be determined by the size of the roller. For example, if a linear speed of 1.0 m / sec is desired and the diameter of the roller is 10 mm, the rotation speed will be about 600 rpm. As an alternative to roller access, a solid block with a low friction surface can be used to guide the tape towards the wafer. The gap between the tape and the wafer can be adjusted by the magnetic levitation current. Repulsive current can create a real gap between the tape and the wafer. This is particularly useful for static and dynamic etch rate measurements on slurries. The traction current can exert the desired pressure between the tape and the wafer. This lowering force can range from 0.01 psi to 10 psi. This is particularly useful for polishing wafers using soft and fragile low k dielectric materials. In addition, the solid block can be replaced by passing through a porous material to which a positive air pressure can be applied. The porosity of the material creates a small gap between the guide block and the tape. The spacing between the blocks and the tape can eliminate the complexity caused by friction between them, giving microscopic levels of close contact between the tape and the wafer.

Another variant of the invention is the use of the device to evaluate its performance on slurry and polishing processes. One example is shown in FIG. 12 where a slurry chamber having an adjustable volume surrounds a carrier for wafers and a carrier for polishing pads.

FIG. 12 can be used to characterize the polishing slurry for viscosity, contact friction between pad and wafer in the presence of slurry, static etch rate for various fluid motions, removal rate upon contact between pad and wafer, and various low drop forces. Schematic diagram of a slurry evaluator. The relative speed and distance between the pad carrier and the wafer carrier are mechanically controlled or computer programmed to vary during polishing. The net averaging effect of this deformation aims to enable each position on the wafer to experience the polishing tape from all directions.

The two carriers can be positioned vertically and can rotate with each other at an adjustable rotation speed. Both carriers can be driven by a simple DC motor with an effective seal to prevent interference of the slurry. The lateral position of the carrier relative to the wafer is typically fixed. The lateral position of the pad is adjustable. The adjustment can be performed by a second motor connected to motor A. The preferred mechanism for control is through the magnetic levitation current. Several patents, such as US Pat. No. 6,750,625, disclose the design and application of a magnetic levitation mechanism to be connected to a stage in a precision zone that matches the requirements for photolithography (FIG. 13 illustrates photolithography applications in the semiconductor industry. Is a reproduction of the work published by CH. Meng and ZP Zhang regarding the ability of the six-axis magnetic levitation stage designed for

Additional patents, such as US Pat. No. 6,559,567, describe the design and application of electromagnetic rotating drives. In particular, Schob et al. Disclose the use of sensor arrangements in electromagnetic rotating devices to measure fluidic properties such as viscosity (US Pat. No. 6,355,998). In the device of the invention, the electromagnetic design can be implemented to control the lateral and rotational movements of the pad carrier. If the pad and wafer are kept at a sufficient distance, the disturbance caused by pad movement on the wafer film is minimized. The removal rate measured under such conditions can be considered as a static etch rate or something close. The resistance exerted in the movement of the pad carrier is mainly due to the slurry viscosity. As the distance between the pad and the wafer becomes smaller, the disturbance caused by pad movement on the wafer surface significantly supports the transport of fluid. The removal rate measured under such conditions can be considered as a dynamic etch rate. As the pad and wafer surface begin to contact, the removal of material from the wafer surface increases significantly. Material removal will increase as the relative pressure between the wafer and the pad increases. The removal rate will actually reach a flat zone as shown in FIG. 14 (reproduction of the figure published by Levitronix technology for measuring the viscosity of the fluid (US Pat. No. 6,640,617).

Initial slope and crossover indicate the static etch characteristics of the slurry. The second slope and intersections indicate the polishing properties of the slurry relative to the wafer film. The combination of these two sets of information will provide an evaluable insight into the planarization capability of this slurry. This information cannot currently be obtained directly through the blanket wafer using polishers.

The schematic of the polisher shown in FIG. 16 shows the use of a taper to replace a polishing pad, showing that the relative speed and center position between the pad and the wafer are mechanically controlled or computer programmed to change during polishing. The net averaging effect of this deformation aims to enable each position on the wafer to experience the polishing tape from all directions.

Other advantages of the present invention include, but are not limited to:

(1) Easy implementation of perfect E-CMP. There is no electrical contact loss, whereby the advantages of the ECM can be fully exploited;

(2) All types of endpoint detectors can be implemented. Unlike conventional polishers, it is easy to implement optical, electrical or frictional endpoint detection devices. There will be no slurry interference problem. Each die will have its own endpoint detector. If feedback loop control is present, there will be no need for excessive polyphase as each die may stop polishing as soon as the end point is reached.

(3) For inner layer dielectric polishing, it is desirable to have global two-dimensional correction. The wafer still remains static, but a single track polisher wheel will come accordingly. This unique design of the polyphase wheel will have the same linear velocity under the arm for most of the area. If the program is adequate, a single policy head is used to reach global flatness.

(4) high productivity. There will be no time delay due to pad adjustment, pad changes and pad out-of-field coordination. While the wafers are changing, the feeds will be adjusted at the same time.

(5) The cost of the feed will be much smaller than the cost in conventional polishers due to the small size of the pads. In addition, the inner-pad non-evenness due to coordination will be eliminated. And the pad can be easily changed during wafer switching.

The invention is further illustrated by the following paragraphs.

1. A method of chemical mechanical polishing of a substrate surface to remove selected portions, the method comprising:

(i) maintaining at least a portion of the substrate surface in sliding frictional contact with a polishing pad until the selected portion of the substrate surface is removed;

(ii) polishing an area on a blanket / pattern wafer comprising one or more dies using a small polishing head of commercially available CMP pads or a single polishing head with pads under evaluation; And

(iii) polishing the pattern wafer using multiple arm polishing heads with each polishing head corresponding to a die on the pattern wafer.

2. The method of the first paragraph, wherein the die on the pattern wafer to be polished is processed and the remaining dies are protected by a cover or mask.

3. The method of first paragraph, wherein only a portion of the substrate surface is polished by a single polish head or multiple arm polish heads having multiple pads, and the remaining area of the substrate surface to be polished is protected.

4. An apparatus for chemical mechanical polishing of the surface of a substrate to remove selected portions, the apparatus comprising:

(i) a stationary platen for fixing a wafer to be polished, the wafer holder being replaceable, the size of the holder being adjustable to fit another size of the wafer;

(ii) a cam eccentric with the motor axis to create an orbital motion of the polishing pad and achieve the same relative speed between each point on the pad and the area to be polished;

(iii) an apparatus for providing vibratory motion on the surface of a single die;

(iv) a disk for securing the multi-arm policy head device;

(v) a slurry conveyer in which a slurry can be supplied to each individual die provided separately on a pattern wafer;

(vi) with two motors, one motor rotates the disk holding the second motor, and the second motor rotates the pad at the same rotational speed and direction of rotation as the first motor, whereby the pad Two motor devices, wherein the same relative speed between each point of the image and the area to be polished is achieved;

(vii) two lever adjusters to control the position of the polish head and the wafer so that all dies on the patterned wafer can be polished;

(viii) adjustable legs for tilting the entire apparatus;

(ix) a slurry collector for collecting the used slurry; And

(x) replaceable pad conditioning disk.

5. The method of fourth paragraph, wherein the tubes of the slurry carrier are distributed in parallel.

6. An apparatus for evaluating the performance and characteristics of a slurry, comprising: a slurry chamber; A rotating wafer carrier positioned vertically and fixed to lateral movement; A rotating pad carrier movable along its lateral axis; A sensor for measuring film thickness change in the field; And a sensor measuring resistance exerted with respect to the rotational movement of the pad carrier.

7. The device of paragraph 6, wherein the lateral and rotational movements of the pad and the wafer carrier are achieved by a DC motor.

8. The device of paragraph 6, wherein the lateral and rotational movement of the pad carrier is achieved by the use of a magnetic levitation device.

9. The device of paragraph 6, wherein the film thickness change is measured by a 14-point probe or eddy current device for the metal film.

10. The device of paragraph 9, wherein the film is a dielectric film and the measurement is made by an optical sensor.

11. In the apparatus of paragraph 10, acoustic sensors for measuring the change in film thickness for metals and nonmetals are used simultaneously.

12. A polisher using a polishing tape for IC wafer processing, comprising: a slurry conveyer; Tape operators, tape guides, and tape cleaning, conditioning, and recycling equipment.

13. The polisher of paragraph 12, wherein the tape can be made of natural, process natural or synthetic materials. Treated natural materials include, but are not limited to, the following examples: silk, cotton, and paper. The tape can be made of synthetic materials such as polyethylene, polypropylene and polystyrene. The tape material may be hydrophobic or hydrophilic. The material can be made porous or non-porous. The tape may also include releasable materials such as composites, catalysts, surfactants, lubricants and / or wear particles. The tape may also include functional groups that can chemically interact with the slurry and the wafer film.

14. The polisher of paragraph 12, wherein the tape operating device is not limited to the following examples, including but not limited to tape tension, tape movement, conditioning, embossment of a temporary pattern before the tape reaches the wafer, and other tapes. A flipping mechanism to allow the use of the side.

15. The polisher of paragraph 12, wherein the tape guide comprises a solid roller or block that adjusts the distance between the tape and the wafer. If a solid block is used to guide the relative distance between the wafer and the tape, the block will contain a magnetic material that reacts to floating currents that create a gap between the tape and the wafer. The electromagnet can also regulate the relative pressure between the tape and the wafer. In another preferred embodiment, the guide block may be porous and allow air flow there through. As a result, the discharge air flow creates a small gap between the block and the tape. This gap is adjustable.

It will be appreciated that the present invention can be used in various other combinations and can be varied and modified within the scope of the inventive concept as described herein.

Claims (15)

A method for chemically and mechanically polishing a substrate surface to remove selected portions, the method comprising: (i) maintaining at least a portion of the substrate surface in sliding frictional contact with a polishing pad until the selected portion of the substrate surface is removed; (ii) polishing an area on a blanket / pattern wafer comprising one or more dies using a small polishing head of commercially available CMP pads or a single polishing head with pads under evaluation; And (iii) each polishing head polishing the pattern wafer using a multi-arm polishing head corresponding with a die on the pattern wafer. The method of claim 1, wherein a die on the pattern wafer to be polished is processed and the remaining dies are protected by a cover or mask. The method of claim 1, wherein only a portion of the substrate surface is polished by a single arm head or multiple arm polish heads having multiple pads, and the remaining area of the substrate surface to be polished is protected. An apparatus for chemically and mechanically polishing a substrate surface to remove selected portions, the apparatus comprising: (i) a stationary platen for fixing a wafer to be polished, the wafer holder being replaceable, the size of the holder being adjustable to fit another size of the wafer; (ii) a cam eccentric with the motor axis to create an orbital motion of the polishing pad and achieve the same relative speed between each point on the pad and the area to be polished; (iii) an apparatus for providing vibratory motion on the surface of a single die; (iv) a disk for securing the multi-arm policy head device; (v) a slurry conveyer in which a slurry can be supplied to each individual die provided separately on a pattern wafer; (vi) with two motors, one motor rotates the disk holding the second motor, and the second motor rotates the pad at the same rotational speed and direction of rotation as the first motor, whereby the pad Two motor devices, wherein the same relative speed between each point of the image and the area to be polished is achieved; (vii) two lever adjusters to control the position of the polish head and the wafer so that all dies on the patterned wafer can be polished; (viii) adjustable legs for tilting the entire apparatus; (ix) a slurry collector for collecting the used slurry; And (x) replaceable pad conditioning disk. The apparatus of claim 4 wherein the tubes of the slurry conveyer are distributed in parallel. Apparatus for evaluating the performance and characteristics of the slurry, Slurry chamber; A rotating wafer carrier positioned vertically and fixed to lateral movement; A rotary pad carrier movable along the lateral axis; A sensor for measuring film thickness change in the field; And And a sensor for measuring resistance exerted with respect to the rotational movement of the pad carrier. 7. The apparatus of claim 6 wherein lateral and rotational movements of the pad and the wafer carrier are achieved by a DC motor. 7. The apparatus of claim 6, wherein the lateral and rotational movements of the pad carrier are achieved by the use of a magnetic levitation device. 7. The apparatus of claim 6, wherein the film thickness change is measured by a 14-point probe or eddy current device for the metal film. 10. The apparatus of claim 9, wherein the film is a dielectric film and the measurement is made by an optical sensor. An apparatus according to claim 10, wherein an acoustic sensor for measuring the change in film thickness for metals and nonmetals is used simultaneously. A polisher using a polishing tape for IC wafer processing, Polisher including slurry carrier, tape operator, guide to tape, and device for tape cleaning, conditioning and recycling. 13. The polisher according to claim 12, wherein the tape can be made of natural material, process natural material or synthetic material. 13. The tape operating apparatus of claim 12, wherein the tape operator comprises a controller of tape tension, a controller of tape motion, a tape conditioner, a relief of the pattern before the tape reaches the wafer, a flipping mechanism that allows use of the other side of the tape, and combinations thereof. Polisher selected from the group consisting of: 13. The polisher of claim 12, wherein the tape guide comprises a solid roller or block that adjusts the distance between the tape and the wafer.

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