KR20090021032A - 박막 증착장치의 분사유닛 - Google Patents
박막 증착장치의 분사유닛 Download PDFInfo
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- KR20090021032A KR20090021032A KR1020070085756A KR20070085756A KR20090021032A KR 20090021032 A KR20090021032 A KR 20090021032A KR 1020070085756 A KR1020070085756 A KR 1020070085756A KR 20070085756 A KR20070085756 A KR 20070085756A KR 20090021032 A KR20090021032 A KR 20090021032A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45568—Porous nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
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- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
Description
Claims (9)
- 내부에 서로 다른 종류의 가스가 흐르는 복수 개의 공급유로가 형성되며, 하부에 상기 공급유로와 연결되는 복수 개의 공급홀이 원주 방향을 따라 배치된 공급 플레이트; 및상기 공급 플레이트의 하부에 구비되어 상기 공급 플레이트에 대해 상대적인 회전 운동을 하며, 회전 위치에 따라 상기 복수 개의 공급홀과 공급유로 중 적어도 일부와 선택적으로 연통하는 하나 이상의 선택 연결홀이 원주 방향을 따라 배치된 연결 플레이트;를 포함하는 박막 증착장치의 분사유닛.
- 제1항에 있어서,상기 공급 플레이트는,복수 개의 서브 플레이트가 순차적으로 적층되어 구성된 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제1항에 있어서,상기 공급 플레이트는,제1반응가스 공급을 위한 제1공급유로가 형성된 제1서브 플레이트;퍼지가스 공급을 위한 제2공급유로가 형성된 제2서브 플레이트; 및제2반응가스 공급을 위한 제3공급유로가 형성된 제3서브 플레이트;를 포함하는 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제3항에 있어서,상기 공급 플레이트는,퍼지가스 공급을 위한 제4공급유로가 형성된 제4서브 플레이트를 더 포함하는 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제2항에 있어서,상기 서브 플레이트는,중앙부에서 상하 방향으로 관통 형성되어, 외부의 공급관과 연결되는 연통홀; 및하면에서 반지름 방향으로 확장된 홈 형태로 이루어져 상기 연통홀과 연결되는 복수 개의 공급유로;를 포함하는 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제5항에 있어서,서로 적층된 서브 플레이트 중 하부에 구비되는 서브 플레이트에는,상부에 위치한 서브 플레이트의 공급유로와 연결되는 공급홀이 형성된 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제1항에 있어서,상기 연결 플레이트의 선택 연결홀은 복수 개로 이루어지며;상기 연결 플레이트의 하부에는 상기 복수 개의 선택 연결홀 각각에 대응하는 챔버가 하부로 개방된 형태로 구비되는 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제1항에 있어서,상기 연결 플레이트에 결합되어 상기 연결 플레이트와 함께 회전하며, 다수의 분사홀이 형성된 샤워헤드를 더 포함하는 것을 특징으로 하는 박막 증착장치의 분사유닛.
- 제1항에 있어서,상기 연결 플레이트는, 상기 공급 플레이트에 대해 일정 구간 사이에서 왕복하며 회전하는 것을 특징으로 하는 박막 증착장치의 분사유닛.
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KR1020070085756A KR100931331B1 (ko) | 2007-08-24 | 2007-08-24 | 박막 증착장치의 분사유닛 |
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KR1020070085756A KR100931331B1 (ko) | 2007-08-24 | 2007-08-24 | 박막 증착장치의 분사유닛 |
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KR20090021032A true KR20090021032A (ko) | 2009-02-27 |
KR100931331B1 KR100931331B1 (ko) | 2009-12-15 |
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Cited By (4)
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WO2015072661A1 (ko) * | 2013-11-18 | 2015-05-21 | 국제엘렉트릭코리아 주식회사 | 반응 유도 유닛 및 기판 처리 장치 그리고 박막 증착 방법 |
KR101523299B1 (ko) * | 2013-11-18 | 2015-05-27 | 국제엘렉트릭코리아 주식회사 | 반응 유도 유닛 및 기판 처리 장치 |
KR101668689B1 (ko) * | 2015-04-14 | 2016-10-24 | 국제엘렉트릭코리아 주식회사 | 박막 증착 방법 |
KR102170451B1 (ko) * | 2020-01-22 | 2020-10-28 | (주)이큐테크플러스 | 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치 |
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JP3649267B2 (ja) | 1996-10-11 | 2005-05-18 | 株式会社荏原製作所 | 反応ガス噴射ヘッド |
JP3869778B2 (ja) * | 2002-09-11 | 2007-01-17 | エア・ウォーター株式会社 | 成膜装置 |
JP3663400B2 (ja) * | 2002-11-01 | 2005-06-22 | エア・ウォーター株式会社 | 成膜装置 |
KR100509231B1 (ko) * | 2003-01-03 | 2005-08-22 | 주식회사 아이피에스 | 박막증착용 반응용기 |
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- 2007-08-24 KR KR1020070085756A patent/KR100931331B1/ko active IP Right Grant
Cited By (7)
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WO2015072661A1 (ko) * | 2013-11-18 | 2015-05-21 | 국제엘렉트릭코리아 주식회사 | 반응 유도 유닛 및 기판 처리 장치 그리고 박막 증착 방법 |
KR101523299B1 (ko) * | 2013-11-18 | 2015-05-27 | 국제엘렉트릭코리아 주식회사 | 반응 유도 유닛 및 기판 처리 장치 |
CN105814664A (zh) * | 2013-11-18 | 2016-07-27 | 国际电气高丽株式会社 | 反应诱导单元、基板处理装置及薄膜沉积方法 |
KR101668689B1 (ko) * | 2015-04-14 | 2016-10-24 | 국제엘렉트릭코리아 주식회사 | 박막 증착 방법 |
KR102170451B1 (ko) * | 2020-01-22 | 2020-10-28 | (주)이큐테크플러스 | 프리커서와 반응가스를 함께 분사하는 라디컬 유닛 및 이를 포함하는 ald장치 |
TWI768618B (zh) * | 2020-01-22 | 2022-06-21 | 南韓商Eq科技加股份有限公司 | 薄膜形成裝置及用於形成薄膜的自由基單元 |
US11661656B2 (en) | 2020-01-22 | 2023-05-30 | Eq Tech Plus Co., Ltd. | Thin film forming apparatus and radical unit for forming thin film |
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