KR20080112862A - Apparatus for processing a substrate having a cleaning unit - Google Patents

Abstract

A substrate processing apparatus having a cleaning unit is provided to reduce the fault of a photoresist pattern formed on a semiconductor substrate by performing washing and drying a semiconductor substrate in which a dipping exposure process is performed. A substrate processing apparatus(10) comprises a first processing block(100), a second processing block(200), a main feed block(300), a third and fourth processing blocks(400,500) and a fifth processing block(800). The first processing block performs a coating process and photolithography process. The second processing block is arranged in order to face the first processing block. The second processing block heat-treats substrates. The main feed block is arranged between the first processing block and the second processing block. The main feed block transfers the substrates. The third and fourth processing block are respectively arranged in both sides of the main feed block toward a vertical direction corresponding to the arranging direction of the first and the second processing block. The third and fourth processing block control the temperature of the substrates. The fifth processing block is arranged between the fourth processing block and a dipping exposure apparatus. The fifth processing block comprises a cleaning unit(810) for washing the substrates in which a dipping exposure process is performed.

Description

Apparatus for processing a substrate having a cleaning unit

1 is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention.

FIG. 2 is a schematic side view for explaining a first processing block of the substrate processing apparatus shown in FIG. 1.

FIG. 3 is a schematic side view for describing a second processing block of the substrate processing apparatus shown in FIG. 1.

4 is a schematic plan view for describing the heat treatment units shown in FIG. 3.

FIG. 5 is a schematic side view for describing the heat treatment units shown in FIG. 3.

6 is a schematic front view for explaining the upper and lower transfer robot shown in FIG.

FIG. 7 is a schematic side view for explaining the upper and lower transfer robots shown in FIG. 6.

FIG. 8 is a schematic front view for explaining another example of the upper and lower transfer robots shown in FIG. 6.

FIG. 9 is a schematic side view for explaining the first and second auxiliary transfer robots shown in FIG. 1.

10 is a schematic side view for explaining the cleaning unit shown in FIG. 1.

11 is a schematic configuration diagram for explaining a dry gas providing unit.

Explanation of symbols on the main parts of the drawings

2: exposure apparatus 10: substrate processing apparatus

20: substrate processing module 30: substrate transfer module

32: load port 34: substrate transfer chamber

36: substrate transfer robot 40: interfacing module

42: interfacing robot 44: edge exposure unit

46: storage stage 100: first processing block

110: upper unit block 112: first coating unit

114: second coating unit 130: lower unit block

132: developing unit 150: central unit block

152 coating unit 154 developing unit

200: second processing block 210: first unit block

230: second unit block 240: heating plate

242: cooling plate 244: heat treatment chamber

244a, 244b: door 246: chamber inside robot

250: third unit block 300: main transfer block

310: upper transfer robot 320: lower transfer robot

330: robot control unit 400: third processing block

410: cooling unit 420: first transfer stage

500: fourth processing block 510: cooling unit

520: second transfer stage 600: first auxiliary transfer block

610: first auxiliary transfer robot 700: second auxiliary transfer block

710: second auxiliary transfer robot 800: fifth processing block

810: cleaning unit 870: second substrate transfer robot

The present invention relates to a substrate processing apparatus. More specifically, the present invention relates to a substrate processing apparatus for performing a coating process, a baking process, a developing process, and the like on a semiconductor substrate such as a silicon wafer.

In general, in the manufacturing process of a semiconductor device, the photoresist pattern may be used as an etching mask for an etching process for forming a circuit pattern having electrical characteristics. The photoresist pattern may be formed by a substrate processing apparatus (or photoresist pattern forming apparatus) connected with the exposure apparatus.

The substrate processing apparatus includes coating units for forming a bottom antireflection film and a photoresist film on a semiconductor substrate, heating units for curing the antireflection film and a photoresist film, and a post exposure bake (PEB) for an exposed semiconductor substrate. Heating units for performing the process, developing units for developing the exposed photoresist film, heating units for curing the photoresist pattern formed on the semiconductor substrate, cooling units for cooling the heated semiconductor substrate For example, transfer stages for housing the semiconductor substrates.

A substrate transfer robot may be disposed between the process units, and the substrate transfer robot transfers the semiconductor substrates between the process units according to a predetermined process recipe.

However, since the time required for the processes are different from each other, the waiting time of the semiconductor substrates in the processing units or the transfer stages may be increased, and the substrate transfer robot may be overloaded.

In addition, the bottom anti-reflection film may not be formed depending on the process recipe, the photoresist composition, the line width of the desired photoresist pattern, and the like. Thus, some of the coating units may not be necessary.

On the other hand, when the conventional substrate processing apparatus is connected to the immersion exposure apparatus, the liquid used in the immersion exposure process may remain on the semiconductor substrate on which the immersion exposure process is performed, thereby forming water spots. The water spots may affect the formation of the photoresist pattern, thereby making it difficult to form the desired photoresist pattern.

One object of the present invention for solving the above problems is to provide a substrate processing apparatus that can prevent the formation of water spots by performing the immersion exposure process.

Another object of the present invention for solving the above problems is to provide a substrate processing apparatus with improved throughput.

A substrate processing apparatus according to embodiments of the present invention for achieving the above objects, the first processing block for performing a coating process and the development process, and disposed to face the first processing block and heat-treating the substrates A second processing block for the main processing block, a main transport block for transferring substrates between the first processing block and the second processing block, and a main processing block in a direction perpendicular to an arrangement direction of the first and second processing blocks; Third and fourth processing blocks respectively disposed on both sides of the transfer block to adjust the temperature of the substrates, and disposed between the fourth processing block and the liquid immersion exposure apparatus and cleaned to clean the substrates on which the liquid immersion exposure process has been performed. The fifth processing block may include a unit.

According to embodiments of the present invention, the cleaning unit includes a rotating chuck for supporting and rotating a substrate, a cleaning liquid supply nozzle for providing a cleaning liquid onto the substrate on the rotating chuck, and drying the substrate cleaned by the cleaning liquid. And a gas supply nozzle for providing a dry gas onto the substrate, and a bowl disposed to surround the rotary chuck and blocking the cleaning liquid scattered from the substrate by the rotation of the substrate.

According to embodiments of the present invention, the cleaning liquid may include water, for example, deionized water, and the dry gas may include isopropyl alcohol vapor and nitrogen gas.

According to embodiments of the present invention, the cleaning unit may further include a dry gas providing unit for providing the dry gas, wherein the dry gas providing unit includes a first container for storing nitrogen gas and a liquid isopropyl alcohol. A second container for storing water, a first heater connected with the first container for heating the nitrogen gas, and a second container, the first heater, and the gas supply nozzle, from the second container. A second heater for vaporizing a provided liquid isopropyl alcohol, mixing the vaporized isopropyl alcohol and the heated nitrogen gas, and providing the mixed isopropyl alcohol vapor and heated dry gas to the gas supply nozzle It may include.

According to embodiments of the present invention, the substrate processing apparatus is disposed adjacent to the second processing block and the third processing block to transfer substrates between the second processing block and the third processing block. And a second auxiliary transfer block disposed adjacent to the second processing block and the fourth processing block to transfer substrates between the second processing block and the fourth processing block. have.

According to embodiments of the present invention, the first processing block is stacked in a vertical direction and each includes at least one coating unit for forming a film on a substrate and at least one developing unit for developing a photoresist film on the substrate. An upper unit block and a lower unit block to include, and may be disposed to be separated between the upper and lower unit blocks, and may include a central unit block including at least one of the coating unit and the developing unit.

According to embodiments of the present invention, an upper portion for transferring substrates between the upper unit block, the central unit block, the second processing block, the third processing block, and the fourth processing block in the main transport block. A lower main robot for transferring substrates may be disposed between the main robot and the lower unit block, the central unit block, the second processing block, the third processing block, and the fourth processing block.

According to embodiments of the present invention, the second processing block may include first, second and third unit blocks arranged in a horizontal direction to face the first processing block, and the first and third processing blocks may be disposed. Each of the unit blocks may be stacked in multiple layers and may include a plurality of heating units for heating the substrates, and the second unit block may be stacked in multiple layers between the first and third unit blocks to heat the substrates. It may comprise a plurality of heat treatment units.

According to embodiments of the present invention, each of the heat treatment units may be disposed on one side of the heating plate for heating the substrate and in the same direction as the arrangement direction of the first, second and third unit blocks. And a heat treatment chamber for receiving a cooling plate for cooling a substrate, the heat plate and the cooling plate, and a pair of entrances and exits for carrying in and taking out the substrates.

According to embodiments of the present invention, each of the heat treatment units is disposed in the heat treatment chamber and through a chamber inside robot for transferring the substrates between the heating plate and the cooling plate, and through the heating plate and the cooling plate. The apparatus may further include a plurality of lift pins arranged to be movable in the vertical direction and for loading the substrates onto the heating plate and the cooling plate and unloading from the heating plate and the cooling plate.

According to embodiments of the present disclosure, the substrate processing apparatus may be connected to a third processing block, and may include a substrate transfer module configured to transfer substrates between a container containing a plurality of substrates and the third processing block. And an interfacing module connected to the fifth processing block and configured to transfer substrates between the immersion exposure apparatus and the fifth processing block.

According to embodiments of the present invention, an interfacing robot for transferring the substrates and a stage for loading the substrates may be provided in the interfacing module.

According to embodiments of the present invention, a substrate transfer robot for transferring substrates between the stage of the interfacing module and the cleaning unit and the fourth processing block may be disposed in the fifth processing block.

According to the embodiments of the present invention as described above, since the liquid immersion exposure process by the liquid immersion exposure apparatus is cleaned and dried by the cleaning unit, it is possible to prevent the generation of water spots. In addition, a load applied to the upper and lower main robots during a coating process, a baking process, a developing process, a cooling process, and the like for a plurality of substrates in the substrate processing apparatus, may be performed. It can be sufficiently reduced by robots and robots inside the chamber of the heat treatment units. As a result, the defect of the photoresist pattern formed on the semiconductor substrate can be reduced, and the throughput of the substrate processing apparatus can be greatly improved.

Example

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the invention to those skilled in the art. In the drawings, the thicknesses of individual devices, elements, films (layers) and regions have been exaggerated for the sake of clarity of the invention, and each of the various devices or elements are various additional devices not described herein. Or additional elements, where each element or film (layer) is referred to as being located on another element or film (layer), disposed or formed directly on the other element or film (layer), or Additional elements or films (layers) may be interposed therebetween.

1 is a schematic plan view illustrating a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic side view for explaining a first processing block of the substrate processing apparatus illustrated in FIG. 1, and FIG. 3 is a schematic side view for explaining a second processing block of the substrate processing apparatus illustrated in FIG. 1.

1 to 3, the substrate processing apparatus 10 according to an embodiment of the present invention may be used to process a semiconductor substrate such as a silicon wafer. For example, a coating process for forming a photoresist film or a bottom anti-reflective coating layer on the semiconductor substrate, an exposure process for transferring a circuit pattern to the photoresist film, and then the semiconductor It may be used to perform a developing process for forming a photoresist pattern on a substrate, a baking process for curing the photoresist film, or the photoresist pattern.

The substrate processing apparatus 10 may include a substrate processing module 20 for processing a semiconductor substrate, a substrate transfer module 30 for transferring a semiconductor substrate, and an exposure apparatus 2 and the substrate processing module 20. It may include an interfacing module 40 disposed in. In particular, the substrate processing apparatus 10 may be connected to the liquid immersion exposure apparatus 2.

The substrate transfer module 30 may include a plurality of load ports 32 for supporting containers 4 containing a plurality of semiconductor substrates, the containers 4 and the substrate processing module 20. In order to transfer the semiconductor substrates between). For example, a front opening Unified Pod (FOUP) may be placed on each load port 32.

A first substrate transfer robot 36 for transferring semiconductor substrates may be disposed in the substrate transfer chamber 34 connected to the substrate processing module 20. The first substrate transfer robot 36 may be configured to be movable in the horizontal and vertical directions, for example, the Y-axis direction and the Z-axis direction. Further, the robot arm of the first substrate transfer robot 36 may be configured to be rotatable and to be extensible and stretchable.

A fan filter unit 38 for supplying purified air into the substrate transfer chamber 34 may be disposed above the substrate transfer chamber 34. In addition, the substrate transfer module 30 may include door openers (not shown) for opening the doors of the FOUPs placed in the load ports 32.

The substrate processing module 20 may apply a photoresist composition or an antireflective material on the semiconductor substrate to form a photoresist film or a bottom antireflection film, and may process the photoresist film on the semiconductor substrate processed by the liquid immersion exposure apparatus 2. The first processing block 100 for developing may be included.

The first processing block 100 may include upper unit blocks 110 and lower unit blocks 130 stacked in a vertical direction. The upper unit blocks 110 may include a plurality of coating units, and the lower unit blocks 130 may include a plurality of developing units. Alternatively, the upper unit blocks 110 may include a plurality of developing units, and the lower unit blocks 130 may include a plurality of coating units.

As shown, the first processing block 100 includes two upper unit blocks 110 and two lower unit blocks 130. However, the scope of the present invention is not limited by the quantity of the upper and lower unit blocks 110 and 130.

According to one embodiment of the present invention, each of the upper unit blocks 110 may include a first coating unit 112 for forming a bottom anti-reflection film and a second coating unit 114 for forming a photoresist film. Can be. Although not shown in detail, a rotation chuck for supporting and rotating the semiconductor substrate and a nozzle for providing an antireflection material onto the semiconductor substrate may be disposed in the first coating unit 112, and the second coating may be disposed. Inside the unit 114, a plurality of rotating chucks for supporting and rotating the semiconductor substrates and a plurality of nozzles for providing the photoresist material onto the semiconductor substrates may be disposed. Meanwhile, the first coating unit 112 and the second coating unit 114 may be disposed in the X axis direction.

According to another embodiment of the present invention, each of the upper unit blocks 110 may include a plurality of coating units arranged in a horizontal direction. Each coating unit is provided to form a photoresist film on a semiconductor substrate. Although not shown in detail, each coating unit may include a coating chamber in which a coating process is performed, a nozzle for providing a photoresist composition on a semiconductor substrate, and a rotary chuck for supporting and rotating the semiconductor substrate. However, multiple rotating chucks and multiple nozzles may be arranged in one coating chamber.

Each lower unit block 130 may include a plurality of developing units 132 arranged in the X-axis direction. Each developing unit is provided for developing a photoresist film on a semiconductor substrate processed by the exposure apparatus 2. Although not shown in detail, each of the developing units 132 may include a developing chamber in which a developing process is performed, a nozzle for providing a developing solution on a semiconductor substrate, and a rotating chuck for supporting and rotating the semiconductor substrate. . However, a plurality of rotary chucks and a plurality of nozzles may be arranged in one developing chamber. In addition, each of the developing units 132 may further include a cleaning nozzle that supplies a cleaning solution for cleaning the semiconductor substrate after the treatment with the developing solution.

According to an embodiment of the present invention, a central unit block 150 may be disposed between the upper unit blocks 110 and the lower unit blocks 130. The central unit block 150 may optionally include coating units and developing units. For example, the central unit block 150 may include only coating units or may include only developing units. Alternatively, the central unit block 150 may include one coating unit and a plurality of developing blocks. In addition, the central unit block 150 may include a plurality of coating units and one developing block. In addition, the central unit block 150 may include a plurality of coating units and a plurality of developing units.

As shown, although the central unit block 150 includes one coating unit 152 and two developing units 154, the coating unit (s) constituting the central unit block 150 and The quantity of developing unit (s) does not limit the scope of the present invention.

In particular, the coating unit (s) and the developing unit (s) constituting the central unit block 150 may be disposed to be separated between the upper unit blocks 110 and the lower unit blocks 130. That is, the configuration of the central unit block 150 may be changed according to a preset process recipe. Accordingly, the throughput of the substrate processing apparatus 10 may be greatly improved.

The substrate processing module 20 may further include a second processing block 200 disposed to face the first processing block 100. The second processing block 200 may include a plurality of unit blocks arranged in the X-axis direction and may be provided for heat treatment of the semiconductor substrate. In particular, the second processing block 200 may be provided to perform a bake process and a photoresist reflow process for curing a photoresist film, a bottom anti-reflection film, a photoresist pattern, etc. formed on a semiconductor substrate. After the baking process may be provided to cool the semiconductor substrate.

For example, the second processing block 200 may include first, second and third unit blocks 210, 230, and 250, and the second unit block 230 may include the first and second unit blocks 230. It may be disposed between the third unit blocks (210, 250). The first and third unit blocks 210 and 250 may include a plurality of heating units 212, 214, 252, and 254 for heating a semiconductor substrate, and the second unit block 230 may be A plurality of heat treatment units 232 and 234 for heating and cooling the semiconductor substrate may be included. The heating units 212, 214, 252, and 254 and the heat treatment units 232 and 234 may be stacked in a vertical direction.

Each of the heating units 212, 214, 252, 254 may include a heating plate for supporting and heating the semiconductor substrate and a heating chamber for receiving the heating plate. Although not shown in detail, each of the heating units 212, 214, 252, and 254 may further include lift pins disposed to be movable in the vertical direction through the heating plate. A driving part connected to the lift pins may be disposed below the heating plate to move the lift pins in a vertical direction.

The heating units 212, 214, 252, and 254 may be used to perform a hydrophobization treatment, a soft bake process, a post exposure bake (PEB) process, a hard bake process, and the like.

The hydrophobization treatment may be performed to change the surface properties of the semiconductor substrate to hydrophobicity. For example, some of the heating units 212, 214, 252, and 254 may each include nozzles for supplying hexamethyldisilazane (HMDS) gas onto the semiconductor substrate.

The soft bake process may be performed to cure the photoresist film formed on the semiconductor substrate by the photoresist coating process, that is, to remove the solvent in the photoresist film.

The PEB process may be performed to improve the side profile of the photoresist pattern after the exposure process, and the hard bake process may be performed to cure the photoresist pattern after the developing process.

For example, the first unit block 210 may include first heating units 212 for hydrophobization treatment (or HMDS treatment) and second heating units 214 for hard baking process, The third unit block 250 may include third heating units 252 for the soft bake process and fourth heating units 254 for the PEB process.

In addition, the first heating units 212 may be disposed above the first unit block 210, and the second heating units 214 may be disposed below the first unit block 210. . In addition, the third heating units 252 may be disposed above the third unit block 250, and the fourth heating units 254 may be disposed below the third unit block 250. Can be arranged. This places the first and third heating units 212 and 252 for the hydrophobization and soft bake process adjacent to the coating units 112 and 114, and the second and third for the hard bake process and the PEB process. The fourth heating units 214 and 254 are disposed adjacent to the developing units 132. However, the scope of the present invention will not be limited by the location of the heating units 212, 214, 252, 254.

4 is a schematic plan view for describing the heat treatment units shown in FIG. 3, and FIG. 5 is a schematic side view for explaining the heat treatment units shown in FIG. 3.

4 and 5, each of the heat treatment units 232 and 234 is disposed on one side of the heating plate 240 for heating the semiconductor substrate, and the heating plate 240 in the X-axis direction. Heat treatment chamber 244 which has a cooling plate 242 for cooling the substrate, and a pair of doors 244a and 244b for receiving the heating plate 240 and the cooling plate 242 and for transferring the semiconductor substrates. ) May be included.

The heat treatment units 232 and 234 may be provided to perform a bake process or a photoresist reflow process on the semiconductor substrates. For example, the second unit block 230 may include upper heat treatment units 232 for performing a baking process and a cooling process for curing the bottom anti-reflection film, and a lower portion for performing the photoresist reflow process and cooling process. The heat treatment units 234 may be included.

In addition, each of the heat treatment units 232 and 234 is an intra-chamber robot for transferring a semiconductor substrate between the heating plate 240 and the cooling plate 242 in the heat treatment chamber 244. 246).

The chamber inner robot 246 may include a guide rail 246a for moving the X-axis robot arm 246b. The robot arm 246b may be coupled to the guide rail 246a to be movable in the X-axis direction, and may extend in the Y-axis direction toward the heating plate 240 and the cooling plate 242.

Although not shown in detail, each of the heat treatment units 232 and 234 further includes lift pins 248a and 248b arranged to be movable in the vertical direction through the heating plate 240 and the cooling plate 242. can do. Driving portions 249 connected to the lift pins 248a and 248b to move the lift pins 248a and 248b in the vertical direction are disposed under the heating plate 240 and the cooling plate 242, respectively. Can be.

The heating plate 240 may be connected to a heater for heating the semiconductor substrate, and the cooling plate 242 may have a cooling line for cooling the semiconductor substrate. In particular, an electric resistance heating wire may be embedded in the heating plate 240, and a circulation passage for circulating a refrigerant may be formed in the cooling plate 242.

In addition, each of the heating plate 240 and the cooling plate 242 may have a plurality of protrusions for supporting the semiconductor substrate while the semiconductor substrate is raised to a height of about 0.1 to 0.3 mm.

Referring back to FIGS. 1 to 3, a main transfer block 300 for transferring semiconductor substrates may be disposed between the first processing block 100 and the second processing block 200. Transfer robots 310 and 320 for transferring semiconductor substrates may be disposed in the main transfer block 300. For example, the upper main robot 310 and the lower main robot 320 may be disposed in the main transport block 300.

FIG. 6 is a schematic front view for explaining the upper and lower main robots shown in FIG. 1, and FIG. 7 is a schematic side view for explaining the upper and lower main robots shown in FIG. 6. FIG. 8 is a schematic front view illustrating another example of the upper and lower main robots shown in FIG. 6.

6 and 7, the upper main robot 310 includes a pair of upper vertical guide rails 312 and an upper horizontal guide coupled to the upper vertical guide rails 312 so as to be movable in a vertical direction. It may include a rail 314 and an upper robot arm 316 coupled to the upper horizontal guide rail 314 to be movable in a horizontal direction, and configured to be rotatable and extendable and stretchable.

The lower main robot 320 includes a pair of lower vertical guide rails 322, lower horizontal guide rails 324 coupled to the lower vertical guide rails 322 in a vertical direction, and the lower horizontal guide rails 322. It may include a lower robot arm 326 coupled to the guide rail 324 to be movable in the horizontal direction and configured to be rotatable and extendable and stretchable.

The substrate processing module 20 may further include a third processing block 400 and a fourth processing block 500 for controlling temperature of the semiconductor substrates. The third and fourth processing blocks 400 and 500 are the main transport block 300 in a direction perpendicular to the direction in which the first and second processing blocks 100 and 200 are arranged, that is, in an X direction. It can be placed at both sides of the). In detail, the third and fourth processing blocks 400 and 500 may be disposed between the substrate transfer module 30, the main transfer block 300, and the interfacing module 40, respectively.

The upper main robot 310 may be used to transfer semiconductor substrates between the first, second, third and fourth processing blocks 100, 200, 400, and 500 before an exposure process. In particular, the upper main robot 310 includes upper unit blocks 110, a central unit block 150, first and third heating units 212 and 252, and third and fourth processing blocks 400. , 500 may be configured to transfer the semiconductor substrates.

The lower main robot 320 may be used to transfer semiconductor substrates between the first, second, third and fourth processing blocks 100, 200, 400, and 500 after an exposure process. In particular, the lower main robot 320 includes lower unit blocks 130, a central unit block 150, second and fourth heating units 214 and 254, and third and fourth processing blocks 400. , 500 may be configured to transfer the semiconductor substrates.

The upper vertical guide rails 312 may be disposed adjacent to the first processing block 100, and the lower vertical guide rails 322 may be disposed adjacent to the second processing block 200. have. This is to allow both the upper main robot 310 and the lower main robot 320 to load or unload a semiconductor substrate with respect to the central unit block 150. When the upper main robot 310 and the lower main robot 320 operate in an area adjacent to the central unit block 150, the operations of the upper and lower main robots 310 and 320 do not interfere with each other. It may be controlled by the controller 330.

According to another embodiment of the present invention, as shown in FIG. 8, the upper robot arm 346 may be coupled to the upper horizontal guide rail 344 to face downward, and the lower robot arm 356 may be upwards. May be coupled to the lower horizontal guide rail 354. In this case, the upper vertical guide rails 342 and the lower vertical guide rails 352 may be disposed adjacent to the first processing block 100 or the second processing block 200.

4 and 5, the semiconductor substrate may be loaded into the heat treatment chamber 244 through the first door 244a of the heat treatment chamber 244, and then through the heating plate 240. The lift pins 248a may be loaded onto the heating plate 240. The semiconductor substrate on which the baking process or the photoresist reflow process is performed on the heating plate 240 is lifted from the heating plate 240 by the lift pins 248a. The robot arm 246b of the chamber inner robot 246 moves down the raised semiconductor substrate, and the semiconductor substrate is supported by the robot arm 246b by the lowering of the lift pins 248a. The semiconductor substrate supported by the robot arm 246b moves above the cooling plate 242 by the movement of the robot arm 246b and is lifted by lift pins 248b that rise through the cooling plate 242. It is lifted from the robot arm 246b. After the robot arm 246b is returned, the semiconductor substrate may be placed on the cooling plate 242 by lowering the lift pins 248b. The semiconductor substrate cooled to a predetermined temperature, for example, about 30 to 50 ° C. on the cooling plate 242 may be carried out through the second door 244b of the heat treatment chamber 244.

Since the transfer of the semiconductor substrate between the heating plate 240 and the cooling plate 242 in the heat treatment chamber 244 is performed by the chamber inner robot 246 as described above, the upper and lower portions of the main transfer block 300. The load of the main robots 310 and 320 may be reduced. In addition, while the semiconductor substrate is cooled by the cooling plate 242, a baking process or a photoresist reflow process for another semiconductor substrate may be simultaneously or continuously performed by the heating plate 240. Accordingly, throughput of the substrate processing apparatus 10 can be greatly improved.

Referring back to FIGS. 1 to 3, the third and fourth processing blocks 400 and 500 may be provided to cool the semiconductor substrate heated by the second processing block 200. For example, each of the third and fourth processing blocks 400 and 500 may include a plurality of cooling units 410 and 510 for cooling the semiconductor substrate to a predetermined temperature, for example, about 23 ° C. It may include. The cooling units 410 and 510 may be stacked in a vertical direction.

In addition, the third and fourth processing blocks 400 and 500 may secondary cool the semiconductor substrate primarily cooled by the cooling plate 242 of the upper or lower heat treatment unit 232 or 234 to a temperature of about 23 ° C. Can be used to make. The cooling plate 242 of the heat treatment unit 232 or 234 may first cool the temperature of the semiconductor substrate to a temperature of about 30 to 50 ° C.

Each of the cooling units 410, 510 may include a cooling chamber and a cooling plate disposed therein. Although not shown in detail, a passage for circulating the cooling water may be provided in the cooling plate, and the cooling plate may be maintained at a temperature of about 23 ° C. by the circulation of the cooling water.

Each of the cooling units 410 and 510 may include a plurality of lift pins arranged to be movable in a vertical direction through the cooling plate to perform loading and unloading operations of the semiconductor substrate. The lift pins may be disposed to be movable in the vertical direction through the cooling plate, and a driving part connected to the lift pins may be disposed below the cooling plate to move the lift pins in the vertical direction.

In addition, the third and fourth processing blocks 400 and 500 may further include a first transfer stage 420 and a second transfer stage 520 for loading semiconductor substrates, respectively. The first and second transfer stages 420 and 520 may be disposed between the cooling units 410 and 510. For example, the first and second transfer stages 420 and 520 may be disposed to correspond to the central unit block 150 of the first processing block 100. This is to allow both the upper and lower main robots 310 and 320 to transfer the semiconductor substrates via the first and second transfer stages 420 and 520.

FIG. 9 is a schematic side view for explaining the first and second auxiliary transfer robots shown in FIG. 1.

1 and 9, the substrate processing module 20 may further include a first auxiliary transfer block 600 and a second auxiliary transfer block 700. The first auxiliary transfer block 600 is provided to transfer semiconductor substrates between the third processing block 400 and the first unit block 210 of the second processing block 200, and a second auxiliary transfer block is provided. Block 700 is provided to transfer semiconductor substrates between the fourth processing block 500 and the third unit block 250 of the second processing block 200.

The first auxiliary transfer block 600 is disposed between the third processing block 400, the first unit block 210, and the substrate transfer module 30, and the first auxiliary transfer block 600 is disposed to be movable in the vertical direction. The robot 610 may be included. The first auxiliary transfer robot 610 moves in a direction perpendicular to the first vertical guide rail 612 extending in the vertical direction in the first auxiliary transfer block 600 and the first vertical guide rail 612. It may include a first robot arm 614 coupled to enable. The first robot arm 614 may be configured to be rotatable and to be extensible and stretchable.

The first auxiliary transfer block 600 is configured to process semiconductor substrates processed by the heating units of the first unit block 210, that is, the first heating units 212 and the second heating units 214. It is provided to transfer to the cooling units 410 of the third processing block 400.

Each of the first and second heating units 212 and 214 may include a front door 220 adjacent to the main transport block 300 and a side door 222 adjacent to the first auxiliary transport block 600. Can have In addition, each of the cooling units 410 of the third processing block 400 may include a front door 412 adjacent to the main transport block 300 and a side door adjacent to the first auxiliary transport block 600. 414).

The semiconductor substrates may be loaded into the first unit block 210 through the front doors 220 of the first unit block 210 by the upper or lower main robots 310 and 320. 610 may be carried out from the first unit block 210 through the side doors 222 of the first unit block 210. In addition, the first auxiliary transfer robot 610 may be transferred to the third processing block 400 through the side doors 414 of the third processing block 400. Therefore, loads of the upper and lower main robots 310 and 320 may be greatly reduced, and thus throughput of the substrate processing apparatus 10 may be improved.

The second auxiliary transfer block 700 is disposed between the fourth processing block 500, the third unit block 250, and the interfacing module 40 and is arranged to be movable in the vertical direction. 710 may be included. The second auxiliary transfer robot 710 moves in a direction perpendicular to the second vertical guide rail 712 and the second vertical guide rail 712 extending in the vertical direction in the second auxiliary transfer block 700. It may include a second robot arm 714, possibly coupled. The second robot arm 714 can be configured to be rotatable and to be extensible and stretchable.

The second auxiliary transfer block 700 may be configured to heat the semiconductor substrates processed by the heating units of the third unit block 250, that is, the third heating units 252 and the fourth heating units 254. It is provided to transfer to the cooling units 510 of the fourth processing block 500.

Each of the third and fourth heating units 252 and 254 may include a front door 260 adjacent to the main transport block 300 and a side door 262 adjacent to the second auxiliary transport block 700. Can have. In addition, each of the cooling units 510 of the fourth processing block 500 may include a front door 512 adjacent to the main transport block 300 and a side door adjacent to the second auxiliary transport block 700. 514).

The semiconductor substrates may be loaded into the third unit block 250 through the front doors 260 of the third unit block 250 by the upper or lower main robots 310 and 320. 710 may be carried out from the third unit block 250 through the side doors 262 of the third unit block 250. In addition, the second auxiliary transfer robot 710 may be transferred to the fourth processing block 500 through the side doors 514 of the fourth processing block 500. Therefore, loads of the upper and lower main robots 310 and 320 may be greatly reduced, and thus throughput of the substrate processing apparatus 10 may be improved.

According to another embodiment of the present invention, the semiconductor substrates may be transferred from the first unit block 210 to the third processing block 400 by the upper or lower main robot 310 or 320. In addition, the semiconductor substrates may be transferred from the third unit block 250 to the fourth processing block 500 by the upper or lower main robot 310 or 320. That is, the semiconductor substrates may be selectively transferred by the upper main robot 310, the lower main robot 320, the first auxiliary transfer robot 610, and the second auxiliary transfer robot 710. The time taken to transport them can be shortened.

In addition, the semiconductor substrates processed by the cooling units 410 of the third processing block 400 may have a first transfer stage by the upper or lower main robot 310 or 320 or the first auxiliary transfer robot 610. The semiconductor substrates processed by the cooling units 510 of the fourth processing block 500 may be transferred to the upper or lower main robot 310 or 320 or the second auxiliary transfer robot 710. ) May be transferred to the second transfer stage 520.

In addition, the semiconductor substrates accommodated in the first transfer stage 420 may be transferred to the cooling units 410 of the first unit block 210 or the third processing block 400 by the first auxiliary transfer robot 610. The semiconductor substrates stored in the second transfer stage 520 may be transferred to the cooling units of the third unit block 250 or the fourth processing block 500 by the second auxiliary transfer robot 710. 510 may be transferred.

The robot controller 330 may control operations of the first and second auxiliary transfer robots 610 and 710. For example, the robot controller 330 may allow the upper and lower main robots 310 and 320 and the first and second auxiliary transfer robots 610 and 710 to complementarily operate. You can control the operation. Therefore, overloading of the upper and lower main robots 310 and 320 may be prevented.

Referring back to FIG. 1, a fifth processing block 800 may be disposed between the fourth processing block 500 and the interfacing module 40. The fifth processing block 800 may include a cleaning unit 810 for cleaning a semiconductor substrate on which an immersion exposure process is performed. The liquid used in the liquid immersion exposure process, for example, droplets or moisture, may remain on the semiconductor substrate on which the liquid immersion exposure process is performed, whereby a large amount of water spots may be generated on the semiconductor substrate. The cleaning unit 810 may perform a cleaning and drying process to prevent water spots on the semiconductor substrate.

10 is a schematic side view for explaining the cleaning unit shown in FIG. 1.

Referring to FIG. 10, the cleaning unit 810 includes a rotary chuck 812 for supporting and rotating a substrate, a cleaning liquid supply nozzle 820 for supplying a cleaning liquid, and a gas for supplying a dry gas to dry the substrate. It may include a supply nozzle 830.

The cleaning liquid supply nozzle 820 may be moved to an upper portion of the semiconductor substrate supported on the rotary chuck 812 by the cleaning nozzle arm 822 and the cleaning nozzle driver 824, and the gas supply nozzle 830 may be used. The silver may move to an upper portion of the semiconductor substrate supported on the rotary chuck 812 by the gas nozzle arm 832 and the gas nozzle driver 834. In particular, the cleaning liquid supply nozzle 820 and the gas supply nozzle 830 may be disposed above the semiconductor substrate in the cleaning step and the drying step, respectively.

The rotation chuck 812 is connected to the rotation driver 816 through the rotation shaft 814, and a bowl 840 may be disposed around the rotation chuck 812. The bowl 840 is provided to block the cleaning liquid scattered from the semiconductor substrate by the rotation of the rotary chuck 812. Although not shown, the bowl 840 may be connected to a drain line (not shown) for discharging the used cleaning liquid.

As the cleaning liquid, water, for example, deionized water may be used, and in particular, deionized water heated to about 30 to 70 ° C. may be used to increase the cleaning effect.

Nitrogen gas and isopropyl alcohol vapor may be used as the dry gas. The dry gas may be provided from a dry gas providing unit connected to the gas supply nozzle 830.

11 is a schematic configuration diagram for explaining a dry gas providing unit.

Referring to FIG. 11, the dry gas providing unit 850 may include a first container 852 storing nitrogen gas, a second container 854 storing liquid isopropyl alcohol, and a first gas for heating the nitrogen gas. The heater 856 and a second heater 858 for vaporizing the liquid isopropyl alcohol to generate isopropyl alcohol vapor.

The first heater 856 may be connected to the first container 852 to heat the nitrogen gas to a preset temperature, and the second heater 858 may be connected to the first heater 856. In addition, the second heater 858 is connected to the second container 854 and a liquid isopropyl alcohol is supplied to the second heater 858. The liquid isopropyl alcohol is vaporized in the second heater 858 and mixed with the heated dry gas supplied from the first heater 856. The heated dry gas and the dry gas in which isopropyl alcohol vapor is mixed may be provided on the semiconductor substrate through a gas supply nozzle 830 connected to the second heater 858.

Meanwhile, a first flow rate control valve 860 may be installed between the first vessel 852 and the first heater 856 to control the flow rate of the supplied nitrogen gas, and the second vessel 854 and the first vessel 854 may be installed. A second flow control valve 862 may be installed between the two heaters 858 to control the flow rate of the liquid isopropyl alcohol. In addition, an on / off valve 864 and a mass flow controller 866 may be installed between the second heater 858 and the gas supply nozzle 830.

The cleaning liquid supply nozzle 820 supplies the cleaning liquid onto the central portion of the semiconductor substrate which is rotated by the rotating chuck 812, and the gas supply nozzle 830 is supplied to the rotating chuck 812 after the cleaning step is performed. Dry gas is supplied onto the central portion of the rotating semiconductor substrate. In particular, the cleaning liquid supply nozzle 820 and the gas supply nozzle 830 may move toward the edge from the center portion of the semiconductor substrate during the cleaning step and the drying step, respectively. As described above, since cleaning and drying of the semiconductor substrate are sequentially performed, water spots may be prevented from being generated on the semiconductor substrate.

Referring back to FIG. 1, in the fifth processing block 800, a semiconductor is formed between the interfacing module 40, the cleaning unit 810, and the second transfer stage 520 of the fourth processing block 500. A second substrate transfer robot 870 may be disposed for transferring the substrates. The second substrate transfer robot 870 may be disposed to be movable in the horizontal and vertical directions, for example, the Y-axis direction and the Z-axis direction. In addition, the robot arm of the second substrate transfer robot 870 may be configured to be rotatable and to be extensible and stretchable.

The interfacing module 40 may be disposed between the fifth processing block 800 and the liquid immersion exposure apparatus 2. An interfacing robot 42 may be disposed in the interfacing module 40 to transfer the semiconductor substrate between the fifth processing block 800 and the liquid immersion exposure apparatus 2. The interfacing robot 42 may be configured to be movable in the vertical direction, and the robot arm of the interfacing robot 42 may be configured to be rotatable and to be extensible and stretchable.

In addition, an edge exposure unit 44 and a storage stage 46 may be disposed in the interfacing module 40. The edge exposure unit 44 may be provided to remove the photoresist film portion on the edge portion of the semiconductor substrate, and the storage stage 46 may be formed before the semiconductor substrate is introduced into the exposure apparatus 2 or the exposure process may be performed. It may be provided for the waiting of the semiconductor substrate after it is performed. The edge exposure unit 44 and the storage stage 46 may be disposed to face each other in the Y-axis direction about the interfacing robot 42.

In particular, the second substrate transfer robot 870 transfers the semiconductor substrates from the second transfer stage 520 of the fourth processing block 500 to the storage stage 46 of the interfacing module 40. The interfacing robot 42 transfers the semiconductor substrate from the storage stage 46 to the edge exposure unit 44, and transfers the semiconductor substrate processed by the edge exposure unit 44 to the storage stage 46 or the liquid immersion exposure apparatus ( 2), the semiconductor substrates subjected to the exposure process by the liquid immersion exposure apparatus 2 are transferred to the storage stage 46. The second substrate transfer robot 870 draws the semiconductor substrate loaded on the storage stage 46 and transfers it to the cleaning unit 810, and transfers the semiconductor substrate processed by the cleaning unit 810 to the second transfer. Transfer to stage 520. Although not shown in detail, operations of the second substrate transfer robot 870 and the interfacing robot 42 may be controlled by the robot controller 330.

The edge exposure unit 44 may include a rotation chuck for supporting and rotating the semiconductor substrate, and a light source for irradiating a light beam to an edge portion of the semiconductor substrate supported on the rotation chuck.

Meanwhile, operations of the upper and lower main robots 310 and 320 in the substrate processing module 20 may be controlled by the robot controller 330. In particular, the robot controller 330 may prevent the upper and lower main robots 310 and 320 from interfering with each other in a central space of the main transport block 300, that is, a space adjacent to the central unit block 150. The operations of the upper and lower main robots 310 and 320 may be controlled.

For example, the semiconductor substrate loaded on the first transfer stage 420 by the substrate transfer robot 36 of the substrate transfer module 30 may be moved by the upper main robot 310 of the main transfer block 300. It may be transferred to one of the first heating units 212 for hydrophobization treatment. The semiconductor substrate may be heated to a temperature of about 85 to 120 ° C. by the heating plate of the first heating unit 212, and HMDS gas may be supplied onto the semiconductor substrate.

The semiconductor substrate processed by the first heating unit 212 may be transferred to the third or fourth processing block 400 or 500 by the upper main robot 310, and then to a temperature of about 23 ° C. Can be cooled. Alternatively, the semiconductor substrate processed by the first heating unit 212 may be transferred to the third processing block 400 by the first auxiliary transfer robot 610, and then cooled to a temperature of about 23 ° C. Can be.

The upper main robot 310 may transfer the semiconductor substrate from the third or fourth processing block 400 or 500 to one of the first coating units 112 of the upper unit blocks 110 or the central unit block 150. A bottom anti-reflection film may be coated on the semiconductor substrate by the first coating unit 112.

The upper main robot 310 may transfer the semiconductor substrate on which the bottom anti-reflection film is formed to one of the upper heat treatment units 232 of the second unit block 230, and reflect the bottom by the upper heat treatment unit 232. A baking process (hereinafter, referred to as a 'BARC baking process') and a cooling process for hardening the protective film may be performed. In particular, a first bake process may be performed at a temperature of about 120 to 180 ° C. in the upper heat treatment unit 232, followed by a second bake at a temperature higher than the first bake process temperature, for example, about 150 to 250 ° C. The process can be performed. When the BARC baking process is completed, the semiconductor substrate may be transferred onto the cooling plate 242 inside the upper heat treatment unit 232 by the chamber inner robot 246, and may be weakened by the cooling plate 242. Primary cooling may be to a temperature of about 30 to 50 ℃.

The semiconductor substrate processed by the upper heat treatment unit 232 may be transferred to the third or fourth processing block 400 or 500 by the upper main robot 310, and then cooled to a temperature of about 23 ° C. Can be.

The upper main robot 310 is one of the second coating units 114 of the upper unit blocks 110 or the central unit block 150 from the third or fourth processing block 400 or 500. The photoresist film may be coated on the semiconductor substrate by the second coating unit 114.

The semiconductor substrate on which the photoresist layer is formed may be transferred to one of the third heating units 252 by the upper main robot 310, and the soft baking process for the semiconductor substrate may be performed by the third heating unit 252. Can be performed. For example, the semiconductor substrate may be heated to a temperature of about 70 to 120 ° C. by the third heating unit 252.

The semiconductor substrate on which the soft bake process is performed may be transferred to the fourth processing block 500 by the upper main robot 310 or the second auxiliary transfer robot 710, and the fourth processing block 500 may be transferred to the fourth processing block 500. It may be cooled to a temperature of about 23 ℃ by one of the cooling units 510 of.

The semiconductor substrate cooled by the cooling unit 510 of the fourth processing block 500 may be transferred to the second transfer stage 520 by the upper main robot 310 or the second auxiliary transfer robot 710. It may then be transferred to the immersion exposure apparatus 2 by the second substrate transfer robot 870 and the interfacing robot 42.

The semiconductor substrate processed by the immersion exposure apparatus 2 may be transferred to the cleaning unit 810 by the interfacing robot 42 and the second substrate transfer robot 870, and may be transferred to the cleaning unit 810. By washing and drying. Accordingly, generation of water spots on the semiconductor substrate can be prevented.

The semiconductor substrate on which the cleaning and drying process is performed may be transferred to the second transfer stage 520 by a second substrate transfer robot 870, and the lower main robot 320 or the second auxiliary transfer robot ( 710 may be transferred to one of the fourth heating units 254.

A PEB process on the semiconductor substrate may be performed by the fourth heating unit 254. The semiconductor substrate may be heated to a temperature of about 90 to 150 ° C. by the fourth heating unit 254.

The semiconductor substrate on which the PEB process is performed is performed by the lower main robot 320 to one of the cooling units 410 and 510 of the third and fourth processing blocks 400 and 500 from the fourth heating unit 254. It may be transported, it may be cooled to a temperature of about 23 ℃ by the cooling unit (410 or 510). Alternatively, the semiconductor substrate on which the PEB process is performed is transferred from the fourth heating unit 254 to one of the cooling units 510 of the fourth processing block 500 by the second auxiliary transfer robot 710. It may be cooled to a temperature of about 23 ℃ by the cooling unit 510.

The lower main robot 320 may transfer the semiconductor substrate from the third or fourth processing block 400 or 500 to one of the developing units 132, and the developing process by the developing unit 132 is performed. Can be.

The semiconductor substrate on which the developing process is performed may be transferred to one of the second heating units 214 by the lower main robot 320, and a hard bake process by the second heating unit 214 may be performed. have. In particular, the semiconductor substrate may be heated to a temperature of about 110 to 150 ° C by the second heating unit 214.

Alternatively, the semiconductor substrate on which the development process is performed may be transferred to one of the lower heat treatment units 234 by the lower main robot 320, and the photoresist reflow process by the lower heat treatment unit 234 may be performed. This may be done. For example, the semiconductor substrate may be heated to a temperature of about 150 to 180 ° C. by the heating plate 240 of the lower heat treatment unit 234. The semiconductor substrate subjected to the photoresist reflow process is transferred from the heating plate 240 to the cooling plate 242 in the lower heat treatment unit 234 by the robot inside the chamber of the lower heat treatment unit 234. Can be. Subsequently, the semiconductor substrate may be cooled to a temperature of about 30 to 50 ° C. by the cooling plate 242.

The semiconductor substrate on which the hard bake process or the photoresist reflow process is performed is performed by the lower main robot 320 or the first auxiliary transfer robot 610 among the cooling units 410 of the third processing block 400. It can be transferred to one, and then cooled to about 23 degrees Celsius.

The semiconductor substrate may be transferred from the cooling units 410 of the third processing block 400 to the first transfer stage 420 by the lower main robot 320 or the first auxiliary transfer robot 610. The substrate transfer robot 36 may then be carried out from the substrate processing apparatus 10 by the substrate transfer robot 36.

The temperature ranges of the bake processes and photoresist reflow process described above can be varied in various ways depending on the photoresist composition and antireflective material used and the linewidth of the desired photoresist pattern, thereby limiting the scope of the invention. The above will not be limited.

The processes described above may be sequentially performed on one semiconductor substrate, and may be simultaneously performed on a plurality of semiconductor substrates. The operations of the upper and lower main robots 310 and 320 may be controlled so as not to interfere with each other by the robot controller 330 while the processes are performed, and the robot inside the chamber of the heat treatment units 232 and 234. The fields 246 may reduce the load of the upper and lower main robots 310 and 320. In addition, the load of the upper and lower mail robots 310 and 320 may be sufficiently reduced by the first and second auxiliary transfer robots 610 and 710.

According to the present invention as described above, the load on the upper and lower main robots during the coating process, the baking process, the developing process, the cooling process, etc. for a plurality of semiconductor substrates in the substrate processing apparatus is performed. It can be reduced by the first and second auxiliary transfer robots and the robots inside the chamber of the heat treatment units.

In addition, the configuration of the central unit block of the first processing block may be variously changed according to the process recipe, the baking process by the heating plate or the photoresist reflow process and cooling by the cooling plate in each heat treatment unit The treatment may be performed simultaneously or sequentially. Accordingly, the throughput of the substrate processing apparatus can be greatly improved.

Additionally, water spots may be prevented from being generated on the semiconductor substrate by cleaning and drying the semiconductor substrate on which the liquid immersion exposure process is performed. Therefore, the defect of the photoresist pattern formed on the semiconductor substrate can be reduced.

Although described above with reference to a preferred embodiment of the present invention, those skilled in the art will be variously modified and changed within the scope of the invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

Claims (14)

A first treatment block for performing a coating process and a developing process; A second processing block disposed to face the first processing block and for heat treating the substrates; A main transfer block disposed between the first processing block and the second processing block for transferring substrates; Third and fourth processing blocks respectively disposed on both sides of the main transfer block in a direction perpendicular to an arrangement direction of the first and second processing blocks and configured to control temperatures of substrates; And And a fifth processing block disposed between the fourth processing block and the liquid immersion exposure apparatus and including a cleaning unit for cleaning the substrates on which the liquid immersion exposure process has been performed. The method of claim 1, wherein the cleaning unit, A rotary chuck for supporting and rotating the substrate; A cleaning liquid supply nozzle for providing a cleaning liquid onto the substrate on the rotary chuck; A gas supply nozzle for providing a dry gas onto the substrate to dry the substrate cleaned by the cleaning liquid; And And a bowl arranged to enclose the rotary chuck to block the cleaning liquid scattered from the substrate by the rotation of the substrate. The substrate processing apparatus of claim 2, wherein the cleaning liquid comprises water. The apparatus of claim 2, wherein the dry gas comprises isopropyl alcohol vapor and nitrogen gas. The method of claim 4, wherein the cleaning unit further comprises a dry gas providing unit for providing the dry gas, The dry gas providing unit, A first container for storing nitrogen gas; A second container for storing a liquid isopropyl alcohol; A first heater connected to the first container to heat the nitrogen gas; And Connected to the second vessel, the first heater and the gas supply nozzle, vaporizing liquid isopropyl alcohol provided from the second vessel, mixing the vaporized isopropyl alcohol and the heated nitrogen gas, and And a second heater for providing mixed isopropyl alcohol vapor and heated dry gas to the gas supply nozzle. The semiconductor device of claim 1, further comprising: a first auxiliary transfer block disposed adjacent to the second processing block and the third processing block to transfer substrates between the second processing block and the third processing block; And And a second auxiliary transfer block disposed adjacent to the second processing block and the fourth processing block to transfer substrates between the second processing block and the fourth processing block. . The method of claim 1, wherein the first processing block, An upper unit block and a lower unit block stacked in a vertical direction and each including at least one coating unit for forming a film on the substrate and at least one developing unit for developing a photoresist film on the substrate; And And a central unit block disposed to be separable between the upper and lower unit blocks, the central unit block including at least one of a coating unit and a developing unit. The robot of claim 7, wherein the main transport block includes: an upper main robot for transferring substrates between the upper unit block, the central unit block, the second processing block, the third processing block, and the fourth processing block; And a lower main robot for transferring substrates between the lower unit block, the central unit block, the second processing block, the third processing block, and the fourth processing block. The method of claim 1, wherein the second processing block includes first, second, and third unit blocks arranged in a horizontal direction to face the first processing block. Each of the first and third unit blocks is stacked in multiple layers and includes a plurality of heating units for heating the substrates.  And the second unit block is stacked in multiple layers between the first and third unit blocks and includes a plurality of heat treatment units for heat treating the substrates. The method of claim 9, wherein each of the heat treatment units, A heating plate for heating the substrate; A cooling plate disposed on one side of the heating plate in the same direction as the arrangement direction of the first, second and third unit blocks and cooling the substrate; And And a heat treatment chamber for receiving the heating plate and the cooling plate and having a pair of entrances and exits for carrying in and out of the substrates. The method of claim 10, wherein each of the heat treatment units, A chamber inside robot disposed in the heat treatment chamber for transferring the substrates between the heating plate and the cooling plate; And And a plurality of lift pins arranged to be movable in the vertical direction through the heating plate and the cooling plate and for loading the substrates onto the heating plate and the cooling plate and unloading from the heating plate and the cooling plate. The substrate processing apparatus made into it. The semiconductor device of claim 1, further comprising: a substrate transfer module connected to the third processing block and configured to transfer substrates between the container in which the plurality of substrates are stored and the third processing block; And And an interfacing module connected to the fifth processing block and configured to transfer substrates between the immersion exposure apparatus and the fifth processing block. The substrate processing apparatus of claim 12, wherein an interfacing robot for transporting the substrates and a stage for loading the substrates are provided in the interfacing module. The substrate processing apparatus of claim 13, wherein a substrate transfer robot is disposed in the fifth processing block to transfer substrates between the stage of the interfacing module and the cleaning unit and the fourth processing block.

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