KR20080111589A

KR20080111589A - Display substrate, method of the manufacturing the same and display panel having the same

Info

Publication number: KR20080111589A
Application number: KR1020070059719A
Authority: KR
Inventors: 김동규
Original assignee: 삼성전자주식회사
Priority date: 2007-06-19
Filing date: 2007-06-19
Publication date: 2008-12-24

Abstract

A display substrate of a display panel is provided to improve the light transmittance efficiency by removing over coating layer, thereby simplifying manufacturing process, and reducing the manufacturing cost. A data line formed on an insulating substrate(210) is intersecting with gate lines. A pixel element structure(500) includes thin film transistors which are electrically connected to the gate and data lines. A color filter layer(220) is formed on the picture element structure. A black matrix(230) is formed on the picture element structure. An inorganic insulation film(240) covers the black matrix, and the color filter layer. A pixel electrode(250) is formed on the inorganic insulation film correspond to each pixel.

Description

DISPLAY SUBSTRATE, METHOD OF THE MANUFACTURING THE SAME AND DISPLAY PANEL HAVING THE SAME}

1 is a plan view illustrating a display device according to an exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 to 6 are cross-sectional views for describing a manufacturing process of the first display substrate illustrated in FIGS. 1 and 2.

7 is a cross-sectional view illustrating a first display substrate according to another exemplary embodiment of the present invention.

100: display panel 200: first display substrate

220: color filter layer 230: black matrix

240: inorganic insulating film 250: pixel electrode

300: second display substrate 400: liquid crystal layer

500: pixel structure

The present invention relates to a display substrate, a method of manufacturing the same, and a display panel having the same, and more particularly, to a display substrate used in a liquid crystal display device for displaying a color image, a method of manufacturing the same, and a display panel having the same.

A display panel used in a liquid crystal display for displaying a color image includes a thin film transistor substrate, a color filter substrate coupled to face the thin film transistor substrate, and a liquid crystal layer disposed between the two substrates.

The thin film transistor substrate may include gate lines, data lines crossing the gate lines, thin film transistors connected to the gate and data lines, and pixel electrodes connected to the thin film transistors to independently drive the plurality of pixels. Include. The color filter substrate may include a color filter layer including red (R), green (G), and blue (B) color filters, a common electrode facing the pixel electrode, a channel matrix of the thin film transistors, and a black matrix disposed at the boundary of the color filters. Include.

When the black matrix is formed of an organic material, the liquid crystal is contaminated by impurities flowing out of the organic black matrix to cause poor quality such as an afterimage. An overcoating layer may be used to block the outflow of impurities from the organic black matrix, but this causes a problem in that the manufacturing cost is increased and the light transmittance is lowered.

Accordingly, the present invention has been made in view of such a problem, and the present invention provides a display substrate which can reduce manufacturing costs while preventing impurities from flowing out of the organic black matrix.

Moreover, this invention provides the manufacturing method of said display substrate.

In addition, the present invention provides a display panel having the display substrate described above.

A display substrate according to an aspect of the present invention includes a pixel structure, a color filter layer, a black matrix, an inorganic insulating film, and a pixel electrode. The pixel structure is formed on an insulating substrate, and includes gate lines, data lines crossing the gate lines, and thin film transistors electrically connected to the gates and data lines. The color filter layer is formed on the pixel structure. The black matrix is formed on the pixel structure. The inorganic insulating layer is formed on the insulating substrate on which the color filter layer and the black matrix are formed to cover the color filter layer and the black matrix. The pixel electrode is formed on the inorganic insulating film corresponding to each pixel.

The black matrix may be formed between the color filter layer and the inorganic insulating layer. Alternatively, the black matrix may be formed between the pixel structure and the color filter layer.

The color filter layer includes red, green, and blue color filters respectively formed to correspond to each pixel. The black matrix covers at least a channel portion of the thin film transistor and a boundary of the red, green, and blue color filters.

According to a method of manufacturing a display substrate according to an aspect of the present invention, a pixel including gate lines, data lines crossing the gate lines, and thin film transistors electrically connected to the gates and data lines on an insulating substrate Form the structure. A color filter layer is formed on the pixel structure. A black matrix is formed on the pixel structure. An inorganic insulating layer covering the color filter layer and the black matrix is formed on the insulating substrate on which the color filter layer and the black matrix are formed. A pixel electrode is formed on the inorganic insulating film corresponding to each pixel.

According to an aspect of the present invention, a display panel includes a first display substrate, a second display substrate including a common electrode formed on a surface facing the first display substrate, and interposed between the first display substrate and the second display substrate. And a liquid crystal layer. The first display substrate includes a pixel structure, a color filter layer, a black matrix, an inorganic insulating layer, and a pixel electrode. The pixel structure is formed on an insulating substrate and includes gate lines, data lines crossing the gate lines, and thin film transistors electrically connected to the gate and data lines. The color filter layer is formed on the pixel structure and includes red, green, and blue color filters. The black matrix is formed on the pixel structure and covers at least a channel portion of the thin film transistors and a boundary portion of the red, green, and blue color filters. The inorganic insulating layer is formed on the insulating substrate on which the color filter layer and the black matrix are formed to cover the color filter layer and the black matrix. The pixel electrode is formed on the inorganic insulating film corresponding to each pixel.

According to such a display substrate, a method of manufacturing the same, and a display panel having the same, a black matrix is formed under an inorganic insulating layer of the thin film transistor substrate. Therefore, the outflow of impurities from the black matrix can be blocked to prevent poor quality, and the overcoating layer can be removed to reduce manufacturing costs.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the following embodiments and may be implemented in other forms. The embodiments introduced herein are provided to make the disclosure more complete and to fully convey the spirit and features of the present invention to those skilled in the art. In the drawings, the thickness of each device or film (layer) and regions has been exaggerated for clarity of the invention, and each device may have a variety of additional devices not described herein. When (layer) is mentioned as being located on another film (layer) or substrate, an additional film (layer) may be formed directly on or between the other film (layer) or substrate.

1 is a plan view illustrating a display device according to an exemplary embodiment of the present invention, and FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, a display device 100 according to an exemplary embodiment of the present invention may include a first display substrate 200, a second display substrate 300 facing the first display substrate 200, and a second display substrate 100. The liquid crystal layer 400 is interposed between the first display substrate 200 and the second display substrate 300.

The first display substrate 200 includes a first insulating substrate 210, a pixel structure 500, a color filter layer 220, a black matrix 230, an inorganic insulating layer 240, and a pixel electrode 250.

The first insulating substrate 210 is formed of, for example, transparent glass or plastic.

The pixel structure 500 is formed on the first insulating substrate 210. The pixel structure 500 may be insulated from and intersect the gate lines 510 through the gate lines 510, the gate insulating layer 520, and the gate lines 510 and the data lines ( Thin film transistors TFT that are electrically connected to the 530.

Gate lines 510 are formed on the first insulating substrate 210. The gate lines 510 extend in the horizontal direction, for example.

The data lines 530 are formed on the gate insulating layer 520. The data lines 530 are insulated from the gate lines 510 through the gate insulating layer 520 and extend in a direction crossing the gate lines 510, for example, in a vertical direction. The data lines 530 may include, for example, a first data line 531 and a second data line 532 to divide and drive each pixel into two zones. The first data line 531 is formed on the left side of each pixel, and the second data line 532 is formed on the right side of each pixel.

The thin film transistors TFT are electrically connected to the gate lines 510 and the data lines 530 to form at least one pixel in each pixel. The thin film transistors TFT may include, for example, a first thin film transistor TFT1 and a second thin film transistor TFT2 to drive each pixel into two regions. The first thin film transistor TFT1 is electrically connected to the gate line 510 and the first data line 531, and the second thin film transistor TFT2 is connected to the gate line 510 and the second data line 532. Electrically connected.

The first thin film transistor TFT1 may include a first gate electrode 512, a first active pattern 540, a first source electrode 533, and a first drain electrode 534. The first gate electrode 512 is electrically connected to the gate line 510. The first active pattern 540 is formed on the gate insulating layer 520 such that at least a portion of the first active pattern 540 overlaps with the first gate electrode 512. The first active pattern 540 may be, for example, a first semiconductor pattern 542 made of amorphous silicon (hereinafter, referred to as a-Si), and n + amorphous silicon (hereinafter, n + a) doped with a high concentration of n-type impurities. A first ohmic contact pattern 544 formed of -Si). The first source electrode 533 is electrically connected to the first data line 531, and at least a portion thereof is formed on the first active pattern 540. The first drain electrode 534 is formed to be spaced apart from the first source electrode 533 on the first active pattern 540.

The second thin film transistor TFT2 may include a second gate electrode 514, a second active pattern (not shown), a second source electrode 535, and a second drain electrode 536. The second thin film transistor TFT2 has a structure substantially similar to that of the first thin film transistor TFT1 except that the second source electrode 535 is electrically connected to the second data line 532. The description will be omitted.

The pixel structure 500 may further include a storage electrode 516. The storage electrode 516 extends in a direction parallel to the gate lines 510, for example, between the gate lines 510. The storage electrode 516 may be formed from a metal layer for forming the gate lines 510. The storage electrode 516 forms a storage capacitor Cst to face the pixel electrode 250 with the gate insulating layer 520, the passivation layer 540, and the inorganic insulating layer 240 interposed therebetween.

The pixel structure 500 may further include a passivation layer 540 covering the gate lines 510, the storage electrode 516, the data lines 530, and the thin film transistors TFT.

The color filter layer 220 is formed on the pixel structure 200. The color filter layer 220 may include red, green, and blue color filters formed to correspond to each pixel. For example, the red, green, and blue color filters have a structure in which pigments of red, green, and blue are respectively included in the photosensitive organic composition. The red, green, and blue color filters are regularly formed to have a predetermined pattern on the pixel structure 500. For example, the red, green, and blue color filters are sequentially arranged along the horizontal or vertical direction such that one color color filter corresponds to each pixel.

The color filter layer 220 may include a storage hole 222 exposing at least a portion of the pixel structure 500 corresponding to the position where the storage electrode 516 is formed. Since the distance between the storage electrode 516 and the pixel electrode 250 is close through the storage hole 222, the capacitance of the storage capacitor Cst is increased.

The black matrix 230 is formed on the first insulating substrate 210 on which the color filter layer 220 is formed. The black matrix 230 may display, for example, a channel portion corresponding to a source electrode and a drain electrode of the thin film transistor TFT, a boundary portion of red, green and blue color filters of the color filter layer 220, and an image substantially. It is formed on the edge area of the display panel 100 that is not provided. The black matrix 230 blocks ambient light applied to the channel of the thin film transistor TFT and prevents backlight light from leaking at the boundary between the color filters and the edge area of the display panel 100. The black matrix 230 may be formed on the color filter layer 220 at the boundary of the thin film transistor (TFT) channel portion and the color filters, and may be formed on the passivation layer 540 in the edge region where the color filter layer 220 is not formed. have. In addition, the black matrix 230 formed at the boundary between the color filters may fill the concave area between the color filters to increase the flatness of the surface of the first display substrate 200.

The black matrix 230 is formed of a material that blocks the transmission of light. For example, the black matrix 230 is formed of a black organic material that absorbs light. Alternatively, the black matrix 230 may be formed of a metal that reflects light.

The inorganic insulating layer 240 is formed on the first insulating substrate 210 on which the color filter layer 220 and the black matrix 230 are formed to cover the color filter layer 220 and the black matrix 230. The inorganic insulating layer 240 blocks impurities from flowing out of the color filter layer 220 and the black matrix 230 made of an organic material, thereby preventing the liquid crystal contained in the liquid crystal layer 400 from being contaminated. The inorganic insulating layer 240 is formed of an inorganic material having low reactivity with organic materials to block the leakage of impurities from the color filter layer 220 and the black matrix 230. For example, the inorganic insulating layer 240 is formed of silicon oxide (SiOx) or silicon nitride (SiNx).

The pixel electrode 250 is formed on the inorganic insulating layer 240 corresponding to each pixel. The pixel electrode 250 is made of a transparent conductive material through which light can pass. For example, the pixel electrode 250 is formed of indium zinc oxide (IZO) or indium tin oxide (ITO).

The pixel electrode 250 may include, for example, a high electrode 252 and a low electrode 254 electrically separated from the high electrode 252 to drive each pixel by dividing into two zones. The high electrode 252 is electrically connected to the first drain electrode 534 of the first thin film transistor TFT1 through the first contact hole CNT1 formed in the passivation layer 540, the color filter layer 220, and the inorganic insulating layer 240. The row electrode 254 is connected to the second electrode 254 of the second thin film transistor TFT2 through the second contact hole CNT2 formed in the passivation layer 540, the color filter layer 220, and the inorganic insulating layer 240. 536).

The first thin film transistor TFT1 applies the first pixel voltage applied through the first data line 531 to the high electrode 252 in response to the first gate voltage applied through the gate line 510. The second thin film transistor TFT2 applies the second pixel voltage applied through the second data line 532 to the row electrode 254 in response to the second gate voltage applied through the gate line 510. As such, the first and second pixel voltages applied to the high and low electrodes 252 and 254 are maintained for one frame through the storage capacitor Cst.

The second display substrate 300 is coupled to face the first display substrate 200 with the liquid crystal layer 400 therebetween. The second display substrate 300 includes a second insulating substrate 310 and a common electrode 320.

The second insulating substrate 310 is formed of, for example, transparent glass or plastic.

The common electrode 320 is formed of a transparent conductive material to transmit light. For example, the common electrode 320 is formed of the same indium zinc oxide (IZO) or indium tin oxide (ITO) as the pixel electrode 250. An opening pattern for implementing a wide viewing angle may be formed in the common electrode 320.

Since the black matrix 230 is formed on the first display substrate 200, the black matrix is not formed on the second display substrate 300. As such, by removing the black matrix of the second display substrate 300, the manufacturing process of the second display substrate 300 may be simplified, and the overcoating layer covering the black matrix may be removed, thereby reducing the cost and reducing the light. The transmittance can be improved.

The liquid crystal layer 400 has a structure in which liquid crystals having optical and electrical characteristics such as anisotropic refractive index and anisotropic dielectric constant are arranged in a predetermined form. In the liquid crystal layer 400, an arrangement of liquid crystals is changed by an electric field formed between the pixel electrode 250 and the common electrode 320, and the transmittance of light passing through the liquid crystal layer 400 is controlled according to the arrangement change of the liquid crystals.

Hereinafter, a method of manufacturing the first display substrate illustrated in FIGS. 1 and 2 will be described.

1 and 3, the gate lines 510, the data lines 530 intersecting the gate lines 510, and the gate and data lines 510 on the first insulating substrate 210. The pixel structure 500 including the TFTs electrically connected to the 530 is formed.

Looking at the manufacturing process of the pixel structure 500 in detail.

A first metal pattern including gate lines 510, first and second gate electrodes 512 and 514, and a storage electrode 516 is formed on the first insulating substrate 210.

A gate insulating layer 520 is formed on the first insulating substrate 210 on which the first metal pattern is formed to cover the first metal pattern.

The first and second active patterns 540, the first and second data lines 531 and 532, the first and second source electrodes 533 and 535, and the first and second active patterns 540 on the gate insulating layer 520. A second metal pattern including first and second drain electrodes 534 and 536 is formed. The first and second active patterns 540 and the second metal pattern may be patterned through one mask process using one mask. When the first and second active patterns 540 and the second metal pattern are patterned by one mask process, the first and second active patterns 540 are substantially the same plane as the second metal pattern. It is formed into a shape. In contrast, the first and second active patterns 540 and the second metal pattern may be patterned through a second mask process using two different masks. When the first and second active patterns 540 and the second metal pattern are patterned through two mask processes, respectively, the first and second active patterns 540 may be formed of first and second gate electrodes, respectively. It may be formed only in the portion overlapped with (512, 514).

Meanwhile, between the first source electrode 533 and the first drain electrode 534 and the second source electrode 535 and the second drain electrode 536 to form the first and second thin film transistors TFT1 and TFT2. The ohmic contact pattern 544 of the channel portion corresponding to) is removed.

The passivation layer 540 is formed on the first insulating substrate 210 on which the second metal pattern is formed to cover the second metal pattern. Contact holes 542 are formed in the passivation layer 540 to expose portions of the first and second drain electrodes 534 and 536, respectively. Thus, the manufacturing of the pixel structure 500 is completed.

1 and 4, the color filter layer 220 is formed on the pixel structure 500. The color filter layer 220 includes red, green, and blue color filters. The red, green, and blue color filters are sequentially formed to correspond to each pixel.

Storage holes 222 and contact holes 224 are formed in each of the red, green, and blue color filters. The storage hole 222 exposes a portion of the pixel structure 500 corresponding to the storage electrode 516. The contact holes 224 expose portions of the first and second drain electrodes 534 and 536, respectively.

Referring to FIG. 5, a black matrix 230 is formed on the color filter layer 220. The black matrix 230 may be, for example, a channel portion of the thin film transistors TFT, a boundary portion of red, green and blue color filters of the color filter layer 220, and a first display substrate 200 that does not substantially display an image. Is formed on the edge region of the frame. The black matrix 230 formed at the boundary between the red, green, and blue color filters fills the concave area between the color filters to increase the flatness of the surface of the first display substrate 200.

1 and 6, an inorganic insulating layer 240 covering the color filter layer 220 and the black matrix 230 on the first insulating substrate 210 on which the color filter layer 220 and the black matrix 230 are formed. To form. The inorganic insulating layer 240 blocks impurities from flowing out of the color filter layer 220 and the black matrix 230 made of an organic material to prevent contamination of the liquid crystal. Contact holes 242 are formed in the inorganic insulating layer 240 to expose portions of the first and second drain electrodes 534 and 536.

The pixel electrode 250 is formed on the inorganic insulating layer 240 corresponding to each pixel. The pixel electrode 250 may include a high electrode 252 and a low electrode 254. The high electrode 252 is electrically connected to the first drain electrode 534 through the first contact hole CNT1 formed in the passivation layer 540, the color filter layer 220, and the inorganic insulating layer 240, and the low electrode 254. ) Is electrically connected to the second drain electrode 536 through the second contact hole CNT2 formed in the passivation layer 540, the color filter layer 220, and the inorganic insulating layer 240.

Referring to FIG. 7, the first display substrate 600 according to another exemplary embodiment of the present invention may include the black matrix 610 except that the black matrix 610 is formed between the pixel structure 500 and the color filter layer 220. Since the structure is the same as that shown in Figure 2, the same reference numerals are used for the same components and detailed description thereof will be omitted.

The black matrix 610 is formed after forming the pixel structure 500 and before forming the color filter layer 220. The black matrix 610 may include, for example, a channel portion of the thin film transistor TFT, a boundary portion of red, green, and blue color filters of the color filter layer 220, and a first display substrate 600 that does not substantially display an image. It is formed in the border region of the. The black matrix 610 blocks ambient light applied to the channel portion of the thin film transistor TFT and prevents backlight light from leaking at the boundary between the color filters and the edge region of the first display substrate 600.

According to such a display substrate, a method of manufacturing the same, and a display panel having the same, the black matrix is formed on the first display substrate instead of the second display substrate, thereby simplifying the manufacturing process of the second display substrate and removing the overcoating layer to reduce the cost. It can reduce and improve the light transmittance.

In addition, the black matrix formed on the first display substrate is formed under the inorganic insulating layer to prevent impurities from flowing out of the black matrix made of organic material, thereby preventing contamination of the liquid crystal, and preventing display defects such as afterimages caused by liquid crystal contamination. You can prevent it.

In the detailed description of the present invention described above with reference to the preferred embodiments of the present invention, those skilled in the art or those skilled in the art having ordinary skill in the art will be described in the claims to be described later It will be understood that various modifications and variations can be made in the present invention without departing from the scope of the present invention.

Claims

A pixel structure formed on an insulating substrate, the pixel structure including gate lines, data lines crossing the gate lines, and thin film transistors electrically connected to the gate and the data lines;

A color filter layer formed on the pixel structure;

A black matrix formed on the pixel structure;

An inorganic insulating layer formed on the insulating substrate on which the color filter layer and the black matrix are formed to cover the color filter layer and the black matrix; And

And a pixel electrode formed on the inorganic insulating layer corresponding to each pixel.

The display substrate of claim 1, wherein the black matrix is formed between the color filter layer and the inorganic insulating layer.

The display substrate of claim 1, wherein the black matrix is formed between the pixel structure and the color filter layer.

The display substrate of claim 1, wherein the color filter layer comprises red, green, and blue color filters respectively formed to correspond to each pixel.

The display substrate of claim 4, wherein the black matrix covers at least a channel portion of the thin film transistors and a boundary portion of the red, green, and blue color filters.

Forming a pixel structure on the insulating substrate, the pixel structure including gate lines, data lines crossing the gate lines, and thin film transistors electrically connected to the gate and data lines;

Forming a color filter layer on the pixel structure;

Forming a black matrix on the pixel structure;

Forming an inorganic insulating film covering the color filter layer and the black matrix on the insulating substrate on which the color filter layer and the black matrix are formed; And

And forming a pixel electrode on the inorganic insulating layer corresponding to each pixel.

The method of claim 6, wherein the black matrix is formed between the color filter layer and the inorganic insulating layer.

The method of claim 6, wherein the black matrix is formed between the pixel structure and the color filter layer.

The color filter layer of claim 6, wherein the color filter layer comprises red, green, and blue color filters respectively formed to correspond to each pixel.

And the black matrix covers at least a channel portion of the thin film transistors and a boundary portion of the red, green, and blue color filters.

A first display substrate;

A second display substrate including a common electrode formed on a surface facing the first display substrate; And

A liquid crystal layer interposed between the first display substrate and the second display substrate,

The first display substrate,

A color filter layer formed on the pixel structure and including red, green, and blue color filters;

A black matrix formed on the pixel structure and covering at least a channel portion of the thin film transistors and a boundary portion of the red, green, and blue color filters;