KR20080088787A - Apparatus for cleaning a chamber in a amorphous carbon-film depositing process and method of cleaning the chamber using the apparatus - Google Patents

Abstract

An apparatus for cleaning a chamber in an amorphous carbon-film depositing process and a method of cleaning the chamber using the same are provided to supply the third plasma gas having fluorine gas to a third gas supply part for cleaning organic impurities which remain on an inner wall of a reaction chamber and shortening cleaning time. A gas preventing shower head includes gas supply modules(210a,210b), a gas separating module(220), and gas spraying modules(230). First and second gases are supplied to the gas supply modules separately. The gas supply modules include outer and inner supply pipes which are separated from each other. The first and second gases are dispersed to the gas separating modules separately. The gas separating module includes first and second dispersion areas(220a,220b). The first gas is dispersed to the first dispersion areas, and the second gas is dispersed to the second dispersion areas. Divided areas of the second dispersion areas are formed with a plurality of spraying parts(225b). The second gas is sprayed to the gas spraying modules. The first gas is sprayed to the gas spraying modules through spaces(225a) covering the spraying parts. The first and second gases are sprayed into a reaction chamber. A third gas includes fluorine gas to clean the inside of the reaction chamber.

Description

Apparatus for cleaning a chamber in a amorphous carbon-film depositing process and method of cleaning the chamber using the apparatus}

1 is a simplified illustration of an amorphous carbon film deposition and cleaning system used in the present invention.

2 is a detailed cross-sectional view of the gas separation showerhead shown in FIG. 1.

3 is a three-dimensional view of a part of the gas separation module and the gas injection module in the gas separation shower head shown in FIG.

4 briefly illustrates the waveguide used in the present invention.

5 is a flowchart illustrating a chamber cleaning method according to an embodiment of the present invention.

6 is a flowchart showing the configuration of the primary cleaning step in detail.

The present invention relates to an amorphous carbon film deposition process, and more particularly, after the amorphous carbon film deposition in the amorphous carbon film deposition process, the first cleaning using a gas separation type showerhead, the second can be cleaned by a separate path secondary The present invention relates to a chamber cleaning apparatus in a carbon film deposition process and a chamber cleaning method using the same.

In the amorphous carbon film deposition process, organic impurities deposited on the inner wall of the reaction chamber after the deposition of the amorphous carbon film are deposited on the substrate in a continuous process, and the stacked impurities affect the film properties in the subsequent process. Therefore, after deposition of the amorphous carbon film, a step of cleaning the inside of the reaction chamber is required.

In order to clean the organic impurity deposited on the inner wall of the reaction chamber, plasma is mainly used. Conventionally, plasma is generated between the shower head and the heater block in the reaction chamber to clean the inside of the reaction chamber in an amorphous carbon film deposition process. The plasma was generated in the reaction chamber itself.

These conventional methods have been made by setting the power low because the high power to generate the plasma, because the equipment located inside the reaction chamber, such as the inner wall of the reaction chamber or the heater block may be damaged by the plasma. However, in this case, since it is not possible to give sufficient energy for plasma formation of the cleaning gas, a part of the organic impurities remain on the inner wall of the reaction chamber even after cleaning. Therefore, in order to solve this problem, since a large amount of cleaning gas must be supplied into the reaction chamber, the overall process cost increases.

The technical problem to be achieved by the present invention is to clean the energy of the cleaning gas during the first cleaning by applying power for the plasma of the cleaning gas to the gas injection module using a gas separation shower head when cleaning the inside of the reaction chamber after the deposition of the amorphous carbon film The present invention provides a chamber cleaning apparatus and an chamber cleaning method using the same in an amorphous carbon film deposition process that can further increase the cleaning efficiency through secondary cleaning through a separate path through a waveguide.

One embodiment of the chamber cleaning apparatus in the amorphous carbon film deposition process according to the present invention for achieving the above technical problem is provided with a gas separation shower head, a waveguide.

The gas separation shower head includes a gas supply module in which the first gas and the second gas are separated and supplied, a gas separation module in which the supplied first gas and the second gas are separated and dispersed, and a plurality of holes. And a gas injection module in which the separated and dispersed gases are converted into plasma and injected into the reaction chamber in common through the plurality of holes. The waveguide includes a plurality of discharge parts, and a third gas is supplied and injected into the reaction chamber through each of the plurality of discharge parts.

The chamber cleaning method using the chamber cleaning apparatus in the amorphous carbon film deposition process according to the present invention for achieving the above technical problem comprises a first cleaning step, the first purge step, the second cleaning step and the second purge step.

In the first cleaning step, the inside of the reaction chamber is first cleaned by supplying the first gas and the second gas to the gas separation shower head. In the first purge step, a purge is performed to remove the material remaining in the reaction chamber after the first cleaning step. In the second cleaning step, a third gas is supplied from the waveguide to secondary clean the inside of the reaction chamber. In the second purge step, a purge is performed to remove the material remaining in the reaction chamber after the second cleaning step.

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a simplified illustration of an amorphous carbon film deposition and cleaning system used in the present invention.

Referring to FIG. 1, after the amorphous carbon film deposition in the amorphous carbon film deposition process, the system 100 for cleaning the inside of the chamber includes a first gas supply line 110, a second gas supply line 120, and a third gas supply line ( 130, a gas separation shower head 140, a power applying unit 150, a reaction chamber 160, and a waveguide 170. Here, the gas separation shower head 140 is for the first cleaning in the reaction chamber 160 by the oxygen component, the waveguide 170 for the second cleaning in the reaction chamber 160 by the fluorine component will be.

The first gas is supplied from the first gas supply line 110, the second gas is supplied from the second gas supply line 120, and the third gas is supplied from the third gas supply line 130. The first gas, the second gas, and the third gas are separately supplied. In the first gas supply line 110, the second gas supply line 120, and the third gas supply line, as in the case of process gases, valves for controlling opening and closing of respective cleaning gases V / V 1 and V / V 2) and a mass flow controller (MFC 1, MFC 2, etc.) for controlling the flow rate of each cleaning gas are sequentially combined.

The gas separation shower head 140 is supplied with a first gas and a second gas separately, is dispersed and distributed, and is commonly injected into the reaction chamber 160. After the amorphous carbon film is deposited in the reaction chamber 160 by the injected first and second gases, the organic impurities attached to the inner wall of the reaction chamber 160 may be cleaned.

2 is a detailed cross-sectional view of the gas separation showerhead 140 shown in FIG. 1.

The gas separation shower head 140 illustrated in FIG. 2 includes gas supply modules 210a and 210b, a gas separation module 220, and a gas injection module 230.

The gas supply modules 210a and 210b are supplied with the first gas A and the second gas B separated. In order to separate and supply the first gas A and the second gas B, the gas supply modules 210a and 210b include an outer supply pipe 210a and an inner supply pipe 210b that are isolated from each other. Referring to FIG. 2, the first gas A is supplied to the outer supply pipe 210a, and the second gas B is supplied to the inner supply pipe 210b.

In the gas separation module 220, the first gas A and the second gas B supplied to the gas supply modules 210a and 210b are separated and dispersed. In order to separate and disperse the first gas A and the second gas B, the gas separation module 220 may include a first dispersion region 220a connected to the outer supply pipe 210a and a second connection connected to the inner supply pipe 210b. The dispersion region 220b is provided. Referring to FIG. 2, the first gas A is dispersed in the first dispersion region 220a and the second gas B is dispersed in the second dispersion region 220b.

The first dispersion area 220a is composed of one area, and the second dispersion area 220b is located below the first dispersion area 220a and is divided into a plurality of areas. In order to evenly distribute the second gas B in the plurality of divided regions of the second dispersion region 220b, a gas distribution plate 310 (FIG. 3) is preferably provided.

The divided regions of the second dispersion region 220b have a predetermined space between the regions, that is, in the outer space of each region. A plurality of jetting parts 225b are formed below each area.

3 illustrates a three-dimensional view of a gas separation module 220 and a gas injection module 230 of the gas separation shower head 140 shown in FIG. 2.

Referring to FIG. 3, the second gas B is ejected to the gas injection module 230 through the plurality of ejecting units 225b, and the first gas A is dispersed from the first dispersion region 220a. The gas is injected into the gas injection module 230 through a space 225a that surrounds each of the plurality of blowing units 225b through the outer space of each region of the region 220b.

The height of the lower portion of the gas separation module 220 through which the first gas A and the second gas B are injected into the gas injection module 230 is variable, which is determined according to the heights of the ends of the plurality of blowing portions 225b. . The plurality of ejecting portions 225b may be positioned at a higher end than the top of the gas injection module 230, and may be formed to be positioned between the top and the bottom of the gas injection module 230.

The gas injection module 230 includes a plurality of holes 235. The first gas A and the second gas B separated and dispersed in the gas separation module 220 are commonly injected into the reaction chamber 160 through the plurality of holes 235. In addition, the gas injection module 230 is applied to the plasma for power from the power applying unit 150. If the gas injection module 230 is a conductor material as a whole, it may serve as a multi-hollow cathode when power is applied for plasma formation by the power applying unit 150. Therefore, the first gas A and the second gas B may be converted into plasma in the plurality of holes 235.

Since the power for plasma is applied to the gas injection module 230, an insulator electrically insulating the gas separation module 220 and the gas injection module 230 to block an electrical effect on the gas separation module 220. The ring 240 may be further provided.

As a result, the first gas A and the second gas B are plasma-formed in the gas injection module 230 and injected into the reaction chamber 160.

4 briefly illustrates one embodiment of the waveguide 170 used in the present invention. The waveguide 170 used in the present invention includes a plurality of discharge parts 410, and the third gas is supplied from the third gas supply line 130 to supply the reaction chamber 160 through each of the plurality of discharge parts 410. ) And the organic matter or organic oxide remaining in the inner wall surface of the reaction chamber 160 after the first cleaning by the first gas and the second gas is removed again by the injected third gas. Each of the plurality of discharge parts 410 is connected to each of the plurality of third gas injection holes 161 provided at the lower end of the reaction chamber 160.

The waveguide 170 shown in FIG. 4 includes three discharge parts 410, a waveguide body 420, and a third gas supply part 430. In addition, the waveguide 170 shown in FIG. 4 additionally includes three outlets 410 and a PCW (Process Cooling Line) supply unit 440 for maintaining a constant overall temperature of the waveguide 170. Equipped.

The third gas supplied from the third gas supply line 130 through the third gas supply part 430 is evenly distributed from the waveguide body 420 to each of the three discharge parts 410 and each of the three discharge parts 410. It is discharged in three directions from the inside of the reaction chamber 160 through each of the three third gas injection port 161 provided in the lower end of the reaction chamber 160 connected to the.

Referring to FIGS. 1 and 4, the third gas supply unit 430 is supplied with a third gas plasmad by a remote plasma source (RPS). The third gas may be a gas including a gas containing a fluorine component (F) to secondaryly clean the inside of the reaction chamber 160. For example, the third gas may include nitrogen trifluoride (mixed with argon gas (Ar) ( NF ₃ ). In this case, nitrogen trifluoride NF ₃ mixed with argon gas Ar is plasma-formed and injected into the reaction chamber 160.

5 is a flowchart illustrating a chamber cleaning method according to an embodiment of the present invention.

The chamber cleaning method 500 shown in FIG. 5 uses the gas separation showerhead 140 shown in FIG. 2, and includes a first cleaning step S510, a first purge step S520, and a second cleaning step S530. ), And a secondary purge step (S540).

In the first cleaning step (S510), the first gas and the second gas are separated and supplied from the first gas supply line 110 and the second gas supply line 120 to the gas separation shower head 140 to form a plasma state. Sprayed in the gas separation shower head 140 and the reaction chamber 160 to clean the inside.

6 shows one embodiment of the first cleaning step (S510).

The first cleaning step S510 illustrated in FIG. 6 includes a power application step S511, a first and second gas supply step S512, and a first and second gas dispersion and injection step S513. .

In the power applying step (S511), the power for plasma is applied to the gas injection module 230 of the gas separation shower head 140. At this time, the power for the plasma can be applied to the gas injection module 230 to 50W (Watt) to 600W. In addition, RF power or DC power may be applied. The power for the plasma may be applied to one predetermined position of the gas injection module 230. When the gas separation shower head 140 is large, power may be applied to two or more locations for efficient power application.

In the first and second gas supply steps S512, the first gas and the second gas are separately supplied to the gas supply modules 210a and 210b of the gas separation shower head 140.

In the first and second gas dispersion and spraying operations (S513), the first gas and the second gas are separated and dispersed in the gas separation module 220 of the gas separation shower head 140, and the gas of the gas separation shower head 140 is separated and dispersed. Plasmaized in the injection module 230 is commonly injected into the reaction chamber 160. The first and second gas dispersion and spraying steps (S513) are performed in the gas separation shower head 140.

Here, one of the first gas and the second gas may be an oxygen gas (O ₂ ), and the other gas may be an argon gas (Ar). Oxygen gas (O ₂ ) is a main cleaning gas when plasma is formed, and serves as a physical and chemical cleaning of organic impurities such as the inner wall of the reaction chamber 160. Therefore, it is preferable that the flow rate of oxygen gas (O ₂ ) is larger than the flow rate of argon gas (Ar). For example, oxygen gas O ₂ may be supplied at a flow rate of 500 sccm to 10,000 sccm, and argon gas Ar may be supplied at a flow rate of 1 sccm to 2000 sccm.

Argon gas (Ar) is used as a carrier gas of oxygen gas (O ₂ ) in the reaction chamber 160, or serves to prevent the back flow of oxygen gas (O ₂ ) to the gas separation shower head 140. In some cases, the argon gas Ar may be supplied to the gas injection module 230 before the oxygen gas O ₂ to serve as a plasma ignition gas.

In the first cleaning step (S510), the inside of the reaction chamber 160 is first cleaned by the first gas and the second gas that have been plasma-formed. At this time, the inside of the reaction chamber 160 is made at a vacuum pressure of 0.5torr ~ 10 torr.

When the first gas or the second gas is oxygen gas (O ₂ ), by the plasma active oxygen species in the reaction chamber 160, including the alkane series, alkene series, alkyne series formed on the inner wall of the reaction chamber, etc. The carbon-carbon and carbon-hydrogen bonds of the hydrocarbons are broken. Thereafter, the carbon component (C) and the hydrogen component (H) are bonded to each other or to the oxygen component (O) to form a combination of C, H, O, such as H ₂ O, CO ₂ , CH ₄ flow rate Opening of the control valve (TV / V) and gate valve (Gate V / V) and the pumping of the exhaust pump (Pump) is discharged to the outside of the reaction chamber 160.

Here, the carbon component (C), the hydrogen component (H) and the oxygen component (O) generated by the physical cleaning and the physical cleaning in which the carbon-carbon bond and the carbon-hydrogen bond are broken by the physical collision of the oxygen active species. ) Are chemically bonded to each other to produce CO ₂ , H ₂ O, and CH ₄ .

In the first purge step (S520), after the completion of the first cleaning step (S510), a purge is performed with a purge gas, so that the material remaining in the gas separation shower head 140 and the reaction chamber 160 is discharged from the exhaust pump. It is removed out of the reaction chamber 160 by pumping. The purge gas may be nitrogen (N ₂ ), oxygen (O ₂ ), helium (He), argon (Ar), or the like.

In the second cleaning step (S530), the third gas is supplied from the waveguide 170 to the reaction chamber 160 to secondarily clean the inside of the reaction chamber 160. At this time, the inside of the reaction chamber 160 may be made at a pressure of 0.5torr ~ 10 torr in the vacuum state as in the first cleaning step (S510).

In the second cleaning step (S530), the third gas may be a cleaning gas including a gas containing a nitrogen component (N) or a fluorine component (F). For example, nitrogen trifluoride mixed with argon gas (Ar). (NF ₃ ). The third gas is plasmaized by an external RPS (Remote Plasma Source) and supplied to the waveguide 170, and the plurality of discharge parts 410 and the third gas injection hole of the reaction chamber 160 connected thereto from the waveguide 170. Sprayed in various directions through the 161 to clean the reaction chamber 160 inside.

In the second cleaning step (S530), even though the first cleaning is performed in the first cleaning step (S510), the organic impurities may remain in the walls of the reaction chamber 160, or the oxide film may be newly formed by the first cleaning. This is carried out to increase the cleaning efficiency by using the component (N) or the fluorine component (F). This is because the carbon component (C) and oxygen component (O) forming the solid film on the inner wall of the reaction chamber 160 can be easily removed by reaction with the nitrogen component (N) or the fluorine component (F) radicals. .

Second cleaning step (S530) may be referred to as the cleaning of the remote plasma (Remote Plasma) method because the cleaning gas is plasma-formed outside the reaction chamber 160. In addition, when the third gas ejection port 161 is provided at the lower end of the side surface of the reaction chamber 160 and the ejection direction is directed upward, it may be referred to as a bottom-up cleaning.

In the second purge step S540, after the completion of the second cleaning step S530, a purge is performed to remove the material remaining in the reaction chamber 160. The purge gas may be supplied into the reaction chamber 160 through the waveguide 170 or the gas separation shower head 140. At this time, the purge gas in the second purge step (S540) may be nitrogen (N ₂ ) oxygen (O ₂ ), helium (He), argon (Ar) as in the first purge step (S540).

Of course, if necessary, the first cleaning step (S510) and the second cleaning step (S530) may all be repeated, or one of the first cleaning step (S510) and the second cleaning step (S530) may be repeated repeatedly. have.

The technical spirit of the present invention has been described above with reference to the accompanying drawings. However, the present invention has been described by way of example only, and is not intended to limit the present invention. In addition, it is apparent that any person having ordinary knowledge in the technical field to which the present invention belongs may make various modifications and imitations without departing from the scope of the technical idea of the present invention.

As described above, in the chamber cleaning method of the amorphous carbon film deposition process according to the present invention, the oxygen active species reaching the organic impurity formed on the inner wall of the reaction chamber is increased by increasing the density of the plasma itself by the cavity electrode to increase the active species energy of oxygen. This increases the cutting force of the carbon bonds. In addition, the oxygen-activated species penetrates well into the organic impurity and is easily combined with the carbon component to easily escape to the outside of the reaction chamber in the form of carbon dioxide to shorten the cleaning time, thereby improving cleaning efficiency.

In addition, the cleaning efficiency may be further improved by additionally cleaning the organic impurities remaining in the inner wall of the reaction chamber after the first washing by a gas containing a fluorine component supplied through a waveguide through a separate path.

Claims (8)

An apparatus for cleaning the inside of a reaction chamber after an amorphous carbon film deposition in an amorphous carbon film deposition process, A gas supply module in which the first gas and the second gas are separated and supplied, a gas separation module in which the supplied first gas and the second gas are separated and dispersed, and a plurality of holes; A gas separation shower head having a gas injection module in which the separated and dispersed gases are converted into plasma and injected into the reaction chamber in common through the plurality of holes; And And a waveguide provided with a plurality of discharge parts and having a third gas supplied thereto and injected into the reaction chamber through each of the plurality of discharge parts. The method of claim 1, wherein the gas separation shower head, And an insulator ring that electrically insulates the gas separation module from the gas injection module. The method of claim 1, wherein the reaction chamber And a plurality of third gas injection holes provided at a lower side of the side surface, and connected to each of the plurality of discharge parts. According to claim 1, The gas separation module, A first dispersion region in which the first gas is dispersed and composed of one region; A second dispersion region positioned below the first dispersion region, in which the second gas is dispersed and divided into a plurality of regions; And And a plurality of ejecting portions, each of which is formed under each region of the second dispersion region and in which the second gas is ejected, comprises a chamber cleaning apparatus in an amorphous carbon film deposition process. In the method of cleaning a reaction chamber using the chamber cleaning apparatus in the amorphous carbon film deposition process of Claim 1, (a) first cleaning the inside of the reaction chamber by supplying a first gas and a second gas to the gas separation shower head; (b) purging to remove material remaining in the reaction chamber after step (a); (c) supplying a third gas from the waveguide to secondary clean the inside of the reaction chamber; And and (d) purging to remove the material remaining in the reaction chamber after the step (c). The method of claim 5, One of the first gas and the second gas is oxygen gas (O ₂ ), The other of the first gas and the second gas is argon gas (Ar), And said third gas is a gas containing a gas containing at least one of fluorine component (F) and nitrogen component (N). The method of claim 5, wherein step (a) comprises: (a1) applying power for plasma to the gas injection module of the gas separation shower head; (a2) separating and supplying a first gas and a second gas to a gas supply module of the gas separation shower head; And (a3) separating and dispersing the first gas and the second gas in the gas separation module, and converting the first gas and the second gas into a plasma in the gas injection module of the gas separation shower head and spraying the same into the reaction chamber in common; A chamber cleaning method in an amorphous carbon film deposition process. The method of claim 5, wherein the third gas, The chamber cleaning method of the amorphous carbon film deposition process, characterized in that the injection into the reaction chamber by remote plasma by the RPS (Remote Plasma Source) outside the chamber.

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