KR20080085458A - Method of cleaning a chamber in a amorphous carbon-film depositing process using gas separation type showerhead - Google Patents

Abstract

A method of cleaning a chamber in an amorphous carbon-film depositing process using a gas separation type showerhead is provided to increase the cleaning efficiency by applying power for the plasmarization of cleaning gas to a gas injection module using the gas separation type showerhead, thereby increasing energy of the cleaning gas when cleaning an inner part of a reaction chamber after depositing an amorphous carbon film. In a method of cleaning an inner part of a reaction chamber after depositing an amorphous carbon film in an amorphous carbon-film depositing process using a gas separation type showerhead including a gas supply module having an outer supply pipe and an inner supply pipe, a gas separation module having a first dispersion area and a second dispersion area, and a gas injection module having a plurality of holes, the method of cleaning the chamber in the amorphous carbon-film depositing process using the gas separation type showerhead comprises the steps of: (a) applying power for plasmarization to the gas injection module; (b) supplying a first cleaning gas to one of the outer supply pipe and the inner supply pipe of the gas supply module, and supplying a second cleaning gas to the other of the outer supply pipe and the inner supply pipe of the gas supply module; (c) separately dispersing the first cleaning gas and the second cleaning gas in the gas separation module, thereby plasmarizing the first and second cleaning gases in the gas injection module to inject the plasmarized first and second cleaning gases into the reaction chamber in common through the holes; and (d) cleaning the inner part of the reaction chamber.

Description

Method of cleaning a chamber in a amorphous carbon-film depositing process using gas separation type showerhead

1 is a simplified illustration of an amorphous carbon film deposition and cleaning system used in the present invention.

2 is a detailed cross-sectional view of the gas separation showerhead shown in FIG. 1.

FIG. 3 illustrates a three-dimensional view of a gas separation module and a gas injection module of the gas separation shower head shown in FIG. 2.

4 is a flowchart illustrating a chamber cleaning method according to an embodiment of the present invention.

The present invention relates to an amorphous carbon film deposition process, and more particularly to a method for cleaning the inside of the reaction chamber using a gas separation shower head after the amorphous carbon film deposition in the amorphous carbon film deposition process.

In the amorphous carbon film deposition process, the organic impurities deposited on the inner wall of the reaction chamber after the deposition of the amorphous carbon film are deposited on the substrate in a continuous process, and the stacked impurities affect the film properties in the subsequent process. Therefore, after deposition of the amorphous carbon film, a step of cleaning the inside of the reaction chamber is required.

In order to clean the organic impurity deposited on the inner wall of the reaction chamber, plasma is mainly used. Conventionally, plasma is generated between the shower head and the heater block in the reaction chamber to clean the inside of the reaction chamber in an amorphous carbon film deposition process. The plasma was generated in the reaction chamber itself.

These conventional methods have been made by setting the power low because the high power to generate the plasma, because the equipment located inside the reaction chamber, such as the inner wall of the reaction chamber or the heater block may be damaged by the plasma. However, in this case, since it is not possible to give sufficient energy for plasma formation of the cleaning gas, a part of the organic impurities remain on the inner wall of the reaction chamber even after cleaning. Therefore, in order to solve this problem, since a large amount of cleaning gas must be supplied into the reaction chamber, the overall process cost increases.

The technical problem to be achieved by the present invention is to increase the energy of the cleaning gas by applying power for the plasma of the cleaning gas to the gas injection module using a gas separation shower head when cleaning the inside of the reaction chamber after the deposition of the amorphous carbon film to increase the cleaning efficiency. The present invention provides a chamber cleaning method in an amorphous carbon film deposition process using a gas separation type shower head.

In order to achieve the above technical problem, an embodiment of a chamber cleaning method in an amorphous carbon film deposition process using a gas separation shower head according to the present invention includes a gas separation module in which gases are separately supplied by an outer supply pipe and an inner supply pipe, and the outer supply pipe. And a gas separation module and a plurality of holes in which gas supplied separately is dispersed in each dispersion area, and having a first dispersion area connected to the second supply area and a second dispersion area connected to the inner supply pipe. Using a gas separation type shower head having a gas injection module that is applied to the power is applied to the separated and dispersed plasma is plasmaized through the plurality of holes, power supply step, cleaning gas supply step, cleaning gas dispersion and A spraying step and an internal chamber cleaning step.

In the power applying step, the power for plasma is applied to the gas injection module of the gas separation shower head. In the cleaning gas supply step, oxygen gas (O ₂ ) is supplied to any one of the outer supply pipe and the inner supply pipe of the gas supply module of the gas separation shower head, and the argon gas (Ar) is supplied to the other. In the dispersing and spraying of the cleaning gas, the oxygen gas (O ₂ ) and the argon gas (Ar) are separated and dispersed in the gas separation module, and the plasma is converted into the gas injection module to perform the reaction in common through the plurality of holes. Sprayed into the chamber. In the chamber cleaning step, the inside of the reaction chamber is cleaned by the plasmaized oxygen gas (O ₂ ).

Hereinafter, specific embodiments of the present invention will be described in detail with reference to the accompanying drawings.

1 is a simplified illustration of an amorphous carbon film deposition and cleaning system used in the present invention.

Referring to FIG. 1, after the amorphous carbon film deposition in the amorphous carbon film deposition process, the system 100 for cleaning the inside of the chamber includes a first clean gas supply line 110, a second clean gas supply line 120, and a gas separation shower head. 130, a power applying unit 140, and a reaction chamber 150 are provided.

The first clean gas is supplied from the first clean gas supply line 110, and the second clean gas is supplied from the second clean gas supply line 120. In the first cleaning gas supply line 110 and the second cleaning gas supply line 120, valves V / V 1 and V / V 2 for controlling the opening and closing of each cleaning gas, as in the case of the process gases, and each Mass flow controllers (MFC 1, MFC 2) and the like for controlling the flow rate of the cleaning gases are sequentially coupled.

In the gas separation shower head 130, the first cleaning gas and the second cleaning gas are separately supplied, separated and dispersed, and commonly injected into the reaction chamber 150.

After the amorphous carbon film is deposited in the reaction chamber 150 by the injected first and second cleaning gases, the organic impurities attached to the inner wall of the reaction chamber 150 are cleaned.

2 is a detailed cross-sectional view of the gas separation showerhead 130 shown in FIG. 1.

The gas separation shower head 130 illustrated in FIG. 2 includes a gas supply module 210, a gas separation module 220, and a gas injection module 230.

The gas supply module 210 is supplied with the first cleaning gas A and the second cleaning gas B separated. For separate supply of the first clean gas A and the second clean gas B, the gas supply module 210 includes an outer supply pipe 210a and an inner supply pipe 210b that are isolated from each other. Referring to FIG. 2, the first clean gas A is supplied to the outer supply pipe 210a, and the second clean gas B is supplied to the inner supply pipe 210b.

In the gas separation module 220, the first cleaning gas A and the second cleaning gas B supplied to the gas supply module 210 are separated and dispersed. In order to separate and disperse the first cleaning gas A and the second cleaning gas B, the gas separation module 220 may include a first dispersion region 220a connected to an outer supply pipe 210a of the gas supply module 210. And a second dispersion area 220b connected to the inner supply pipe 210b. Referring to FIG. 2, the first cleaning gas A is dispersed in the first dispersion region 220a and the second cleaning gas B is dispersed in the second dispersion region 220b.

The first dispersion area 220a is composed of one area, and the second dispersion area 220b is located below the first dispersion area 220a and is divided into a plurality of areas. In order to evenly distribute the second cleaning gas B in the plurality of divided regions of the second dispersion region 220b, a gas distribution plate 310 (FIG. 3) is preferably provided.

The divided regions of the second dispersion region 220b have a predetermined space between the regions, that is, in the outer space of each region. A plurality of jetting parts 225b are formed below each area.

3 illustrates a three-dimensional view of a gas separation module 220 and a gas injection module 230 of the gas separation shower head 130 shown in FIG. 2.

Referring to FIG. 3, the second cleaning gas B is ejected to the gas injection module 230 through the plurality of ejecting units 225b, and the first cleaning gas A is formed from the first dispersion region 220a. The gas is injected into the gas injection module 230 through the space 225a surrounding each of the plurality of blowing units 225b through the outer space of each region of the two dispersion zones 220b.

The height of the lower part of the gas separation module 220 through which the first cleaning gas A and the second cleaning gas B are ejected to the gas injection module 230 is variable, which depends on the heights of the ends of the plurality of blowing parts 225b. Is determined. The plurality of ejecting portions 225b may be positioned at a higher end than the top of the gas injection module 230, and may be formed to be positioned between the top and the bottom of the gas injection module 230.

The gas injection module 230 includes a plurality of holes 235. The first cleaning gas A and the second cleaning gas B separated and dispersed in the gas separation module 220 are commonly injected into the reaction chamber 150 through the plurality of holes 235. In addition, the gas injection module 230 is applied with power for the plasma from the power applying unit 140. If the gas injection module 230 is a conductor material as a whole, it may serve as a multi-hollow cathode when power is applied for plasma formation by the power applying unit 140. Therefore, the first cleaning gas A and the second cleaning gas B may be converted into plasma in the holes 235.

Since the power for plasma is applied to the gas injection module 230, an insulator electrically insulating the gas separation module 220 and the gas injection module 230 to block an electrical effect on the gas separation module 220. The ring 240 may be further provided.

As a result, the first cleaning gas A and the second cleaning gas B are plasma-formed in the gas injection module 230 and injected into the reaction chamber 150.

4 is a flowchart illustrating a chamber cleaning method according to an embodiment of the present invention.

The chamber cleaning method 400 illustrated in FIG. 4 includes a power application step S410, a cleaning gas supply step S420, a cleaning gas dispersion and injection step S430, and an internal chamber cleaning step S440.

In the power applying step (S410), the power for plasma is applied to the gas injection module 230 of the gas separation shower head 130. At this time, the power for the plasma can be applied to the gas injection module 230 to 50W (Watt) to 600W. In addition, RF power or DC power may be applied. The power for the plasma may be applied to one predetermined position of the gas injection module 230. When the gas separation shower head 130 is large, power may be applied to two or more positions for efficient power application.

In the cleaning gas supplying step (S420), the first cleaning gas is supplied from the first cleaning gas supply line 110 to the outer supply pipe 210a and the inner supply pipe 210b of the gas supply module 210 of the gas separation shower head 130. It is supplied to any one of the supply pipe. At the same time, the second clean gas is supplied to the other supply pipe from the second clean gas supply line 120.

Here, one cleaning gas of the first cleaning gas and the second cleaning gas may be oxygen gas (O ₂ ), and the other cleaning gas may be argon gas (Ar). Oxygen gas (O ₂ ) is a major cleaning gas when plasma is formed, and serves as a physical and chemical cleaning of organic impurities such as the inner wall of the reaction chamber 150. Therefore, it is preferable that the flow rate of oxygen gas (O ₂ ) is larger than the flow rate of argon gas (Ar). For example, the oxygen gas O ₂ may be supplied at a flow rate of 500 sccm to 10,000 sccm, and the argon gas Ar may be supplied at a flow rate of 1 sccm to 2000 sccm.

Argon gas (Ar) is used as a carrier gas of oxygen gas (O ₂ ) in the reaction chamber 150, or serves to prevent the back flow of oxygen gas (O ₂ ) to the gas separation shower head 130. In some cases, the argon gas Ar may be supplied to the gas injection module 230 before the oxygen gas O ₂ to serve as a plasma ignition gas.

In the cleaning gas dispersion and spraying step (S430), oxygen gas (O ₂ ) and argon gas (Ar) are separated and dispersed in the gas separation module 220 of the gas separation shower head 130, and the plasma is discharged from the gas injection module 230. And is injected into the reaction chamber 150 through a plurality of holes 235 in common. The cleaning gas dispersion and spraying step (S420) is performed in the gas separation shower head 130.

In the chamber cleaning step (S440), the inside of the reaction chamber is cleaned by the plasma first and second cleaning gases. At this time, the inside of the reaction chamber is made at a vacuum pressure of 0.5torr ~ 10 torr.

When the first cleaning gas or the second cleaning gas is oxygen gas (O ₂ ), the alkane series, the alken series, and the alkyne series formed by the plasma active oxygen species in the reaction chamber 150 are formed on the inner wall of the reaction chamber. Carbon-carbon bonds and carbon-hydrogen bonds of hydrocarbons are broken. Thereafter, the carbon component (C) and the hydrogen component (H) are bonded to themselves or are combined with the oxygen component (O) to form a combination of C, H, O, such as H ₂ O, CO ₂ , CH ₄ , After the chamber internal cleaning step (S440) is discharged to the outside of the chamber by the opening of the flow control valve (TV / V) and the gate valve (Gate V / V) and the pumping of the exhaust pump (Pump).

Here, physical cleaning in which the carbon-carbon bond and the carbon-hydrogen bond are broken by the physical collision of the oxygen active species proceeds first, and the carbon component (C) and hydrogen component (H) generated by the physical cleaning are performed. And chemical cleaning in which CO ₂ , H ₂ O, CH _4, and the like are bonded to each other by the oxygen component (O). Therefore, in the chamber cleaning method in the amorphous carbon film deposition process using the gas separation shower head according to the present invention, both the physical cleaning and the chemical cleaning can be performed.

The technical spirit of the present invention has been described above with reference to the accompanying drawings. However, the present invention has been described by way of example only, and is not intended to limit the present invention. In addition, it is apparent that any person having ordinary knowledge in the technical field to which the present invention belongs may make various modifications and imitations without departing from the scope of the technical idea of the present invention.

As described above, in the chamber cleaning method of the amorphous carbon film deposition process using the gas separation shower head according to the present invention, the density of the plasma itself is increased by the cavity electrode, and the active species energy of oxygen is increased so that organic impurities formed on the inner wall of the reaction chamber, etc. The amount of oxygen-activated species reaching to increase, thereby increasing the cutting force of the carbon bonds. In addition, the oxygen-activated species penetrates well into the organic impurity, and is easily combined with the carbon component, and easily escapes to the outside of the chamber in the form of carbon dioxide, thereby shortening the cleaning time, thereby improving cleaning efficiency.

Claims (6)

A gas separation module for separating and supplying gases by having an outer supply pipe and an inner supply pipe, a first dispersion area connected with the outer supply pipe, and a second dispersion area connected with the inner supply pipe, wherein the separately supplied gases are dispersed Gas having a gas separation module and a plurality of holes to be separated and dispersed in a region, the gas is provided with a gas injection module that is applied to the plasma to the plasma separated by the power is applied for the plasma is dispersed through the plurality of holes In the method of cleaning the inside of the reaction chamber after the amorphous carbon film deposition in the amorphous carbon film deposition process using a separate shower head, (a) applying power for plasma formation to the gas injection module; (b) a first cleaning gas is supplied to one of an outer supply pipe and an inner supply pipe of the gas supply module, and a second clean gas is supplied to another one; (c) separating and dispersing the first cleaning gas and the second cleaning gas from the gas separation module, converting the plasma into a plasma from the gas injection module, and spraying the same into the reaction chamber through the plurality of holes in common; And (d) The chamber cleaning method in the amorphous carbon film deposition process using a gas separation shower head comprising the step of cleaning the reaction chamber. The method of claim 1, wherein the gas separation shower head, Further comprising an insulator ring electrically insulated between the gas separation module and the gas injection module, the gas separation module is deposited with an amorphous carbon film using a gas separation shower head, characterized in that the power for the plasma is cut off. Chamber cleaning method in the process. The method according to claim 1 or 2, The first cleaning gas is oxygen gas, The second cleaning gas is an argon gas, the chamber cleaning method of the amorphous carbon film deposition process using a gas separation shower head, characterized in that. The method of claim 3, wherein step (d) (d1) breaking the carbon-carbon and carbon-hydrogen bonds formed inside the reaction chamber by the plasma gasified oxygen gas; And (d2) Amorphous using a gas separation type shower head, characterized in that it comprises the step of combining the oxygen component, carbon component and hydrogen component generated by the step (d1) to form CO _2, H ₂ O and CH ₄ Chamber cleaning method in carbon film deposition process. The method of claim 3, wherein in step (b), The oxygen gas is supplied at a flow rate of 500sccm ~ 10,000sccm, The argon gas is a chamber cleaning method in the amorphous carbon film deposition process using a gas separation shower head, characterized in that supplied at a flow rate of 1sccm ~ 2000sccm. According to claim 1 or 2, wherein the reaction chamber, A chamber cleaning method in an amorphous carbon film deposition process using a gas separation shower head, characterized in that maintained at a pressure of 0.5torr ~ 10torr.

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