KR20080075148A - Recyclable etching solution - Google Patents
Recyclable etching solution Download PDFInfo
- Publication number
- KR20080075148A KR20080075148A KR1020087013509A KR20087013509A KR20080075148A KR 20080075148 A KR20080075148 A KR 20080075148A KR 1020087013509 A KR1020087013509 A KR 1020087013509A KR 20087013509 A KR20087013509 A KR 20087013509A KR 20080075148 A KR20080075148 A KR 20080075148A
- Authority
- KR
- South Korea
- Prior art keywords
- etching solution
- etching
- copper
- solution according
- carbonate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/32—Alkaline compositions
- C23F1/34—Alkaline compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/18—Acidic compositions for etching copper or alloys thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
- H05K3/067—Etchants
Abstract
Description
본 발명은 구리 농도 감소에 의한 재순환 가능한 수성 에칭 용액에 관한 것이다. 이러한 용액은 특히 인쇄 회로 산업 및 구리 부품 산업에서 구리 에칭에 사용된다. 용액은 일반적으로 암모니아, 탄산구리, 탄산암모늄 및 물로 이루어졌다.The present invention relates to a recyclable aqueous etching solution by reducing copper concentration. Such solutions are used for copper etching, especially in the printed circuit industry and the copper component industry. The solution generally consisted of ammonia, copper carbonate, ammonium carbonate and water.
종래의 용액은 다수의 형태로 존재한다. 그래서, 이러한 용액은 특별히 인쇄 회로의 에칭에 관한 것이다. 이와 같은 에칭 공정의 가속화는 인쇄 회로의 제조에서 중요한 역할을 한다. 인쇄 회로의 제조는 에칭된 구리 함량과 회수된 구리 함량 사이의 평형을 이루기 위하여 구리 회수의 가속을 요구한다. 이러한 공정의 안정성은 동일한 원소를 얻기 위하여 에칭 품질에서의 연속성을 보장하기 위한 중요 요인이 된다.Conventional solutions exist in many forms. So, this solution is particularly concerned with the etching of printed circuits. This acceleration of the etching process plays an important role in the manufacture of printed circuits. Fabrication of printed circuits requires an acceleration of copper recovery to equilibrate between the etched copper content and the recovered copper content. The stability of this process is an important factor for ensuring continuity in etching quality in order to obtain the same element.
인쇄 회로의 제조 방법에서, 회로 화상은 실크스크린으로 또는 감광 공정에 의하여 마스크 처리되어 "레지스트 화상"을 형성한다. 마스크에 의하여 피복되지 않은 구리 표면은 적절한 에칭 용액에 의하여 에칭된다.In the method of manufacturing a printed circuit, the circuit image is masked with a silkscreen or by a photosensitive process to form a "resist image". The copper surface not covered by the mask is etched with a suitable etching solution.
양면 인쇄 회로의 또다른 제조의 경우, 금속화된 트랙 및 정공은 금속 리지스트에 의하여 보호된다. 유기 리지스트를 스트리핑 처리하고, 나-구리는 적절한 용액에 의하여 에칭된다. 이러한 방법으로 컨덕턴스의 금속화된 트랙 및 정공은 암모니아 용액 및 구리 염의 베이스로 작동되는 에칭 공정중에 금속 리지스트에 의하여 보호된다.In another manufacture of double-sided printed circuits, the metallized tracks and holes are protected by metal resists. The organic resist is stripped and the bare copper is etched by a suitable solution. In this way the metallized tracks and holes of conductance are protected by metal resists during the etching process which is operated with ammonia solution and a base of copper salt.
제한된 에칭 속도, 느린 에칭 용액의 처리 재생 공정, 생산에 직접 영향을 미치는 화학적 변수의 불안정성이 단점이 된다.Disadvantages include limited etch rates, slow process recovery of etch solutions, and instability of chemical variables that directly affect production.
본 발명은 에칭 속도의 가속, 사용한 용액의 재생 및, 화학적 변수의 안정성을 갖는 에칭 공정에서의 재사용의 과제에 기초한 것이다.The present invention is based on the challenges of acceleration of etch rate, regeneration of used solutions, and reuse in etching processes with stability of chemical parameters.
이러한 과제를 해결하기 위하여, 에칭 용액은 또다른 촉매로서 브로모아세틸비페닐 및 이의 유도체를 포함한다.In order to solve this problem, the etching solution includes bromoacetylbiphenyl and derivatives thereof as another catalyst.
본 발명은 촉매로서의 브로모아세틸비페닐이 사용한 에칭 용액의 재생 공정을 지지하기 때문에 이러한 공정을 가속시키는 것으로 밝혀졌다. 또한, 가속의 방해를 억제하고, 구리의 재순환을 가속화시키는 역할을 한다.The present invention has been found to accelerate this process because it supports the regeneration process of the etching solution used by bromoacetylbiphenyl as a catalyst. It also serves to suppress the interference of acceleration and to accelerate the recycling of copper.
이러한 방법으로, 가속제 및 보조 촉매로서 브로모아세틸비페닐을 에칭 용액의 5 내지 200 ㎎/ℓ의 함량으로, 바람직하게는 70 ㎎/ℓ의 함량으로 사용한다.In this way, bromoacetylbiphenyl is used as an accelerator and a cocatalyst in an amount of 5 to 200 mg / l of the etching solution, preferably in an amount of 70 mg / l.
브로모아세틸비페닐, 바람직하게는 4-브로모아세틸비페닐 C14H11BrO는 재생 공정에서의 재생에서 [Cu(NH3)2]+의 착체를 [Cu(NH3)4]++ 착체로 산화시키는 것을 지지한다. 이러한 방식으로, 에칭 용액의 재생 공정을 가속시키게 된다. [Cu(NH3)2]+ 이온은 에칭 공정을 지연시키며, 구리의 재순환을 증가시키는데, 이는 [Cu(NH3)2]+가 에칭에서 [Cu(NH3)4]++로 산화되며, 또한 [Cu(NH3)2]+는 재순환 공정에서 안정화제에 의하여 안정화되어야만 하기 때문이다. 에칭 공정은 하기의 반응식을 따른다:Bromoacetyl-biphenyl, preferably 4-bromoacetyl-biphenyl C 14 H 11 BrO is in the reproduction in the reproducing process [Cu (NH 3) 2] + in the complex [Cu (NH 3) 4] ++ Supports oxidation to complexes. In this way, the regeneration process of the etching solution is accelerated. [Cu (NH 3 ) 2 ] + ions delay the etching process and increase copper recycling, which causes [Cu (NH 3 ) 2 ] + to oxidize to [Cu (NH 3 ) 4 ] ++ in etching This is also because [Cu (NH 3 ) 2 ] + must be stabilized by stabilizers in the recycling process. The etching process follows the scheme below:
Cu + [Cu(NH3)4]++ → 2[Cu(NH3)2]+ Cu + [Cu (NH 3 ) 4 ] ++ → 2 [Cu (NH 3 ) 2 ] +
재생 부분은 하기의 반응에 의하여 NH4 +, NH3 및 산소 착체를 사용하여 실시된다:The regenerated portion is carried out using NH 4 + , NH 3 and oxygen complexes by the reaction:
4[Cu(NH3)4]++ + 4NH3 + 4NH+ + O2 → 4[Cu(NH3)4]++ + 2HO4 [Cu (NH 3 ) 4 ] ++ + 4NH 3 + 4NH + + O 2 → 4 [Cu (NH 3 ) 4 ] ++ + 2HO
재생 부분은 하기의 반응에 의하여 전류를 사용하여 실시된다:The regeneration portion is carried out using a current by the reaction:
[Cu(NH3)2]+ → ½Cu + ½[Cu(NH3)4]++ [Cu (NH 3 ) 2 ] + → ½Cu + ½ [Cu (NH 3 ) 4 ] ++
[Cu(NH3)2]+ + e- → Cu + 2NH3 [Cu (NH 3) 2] + + e - → Cu + 2NH 3
[Cu(NH3)4]++ + 2e- → Cu + 4NH3 [Cu (NH 3) 4] ++ + 2e - → Cu + 4NH 3
구리 산화 속도의 증가는 공정중에서 에칭 속도의 증가를 체계적으로 복구시킨다. 오산화바나듐 또는 기타의 바나듐 화합물은 에칭 속도를 증가시키기 위하여 촉매로서 사용한다.Increasing the copper oxidation rate systematically restores the increase in etch rate during the process. Vanadium pentoxide or other vanadium compounds are used as catalysts to increase the etching rate.
게다가, 본 발명에서 에칭 속도를 증가시키기 위하여 바나듐을 포함하는 촉매 및, 아세틸비페닐을 포함하는 보조 촉매를 사용하는 것은 사용한 에칭 용액의 산화 속도를 증가시키며, 재순환 속도를 증가시키기 위하여 안정화제로서 작용하는 것으로 입증되었다.In addition, the use of a catalyst comprising vanadium and a cocatalyst comprising acetylbiphenyl to increase the etching rate in the present invention increases the oxidation rate of the used etching solution and acts as a stabilizer to increase the recycle rate. Has been proven.
이러한 방법으로, 사용한 에칭 용액의 에칭 속도뿐 아니라, 재생 속도는 공정의 안정성과 재순환 속도에서의 증가를 동시에 증가시킨다.In this way, the regeneration rate as well as the etch rate of the used etch solution simultaneously increases the stability of the process and the increase in recycle rate.
인쇄 회로 또는 인쇄 회로의 제조에서의 상당한 역할은 연속적 또는 불연속적으로 구리 표면을 분쇄시키는 역할을 하는 에칭 기기를 통과하게 된다.A significant role in the manufacture of printed circuits or printed circuits is passed through etching equipment which serves to break the copper surface continuously or discontinuously.
하기의 용액은 최선의 결과를 산출하는 것으로 입증되었다:The following solutions have been demonstrated to yield the best results:
용액 번호 1: Solution number 1 :
1 ℓ당 117 내지 272 g의 CuCO3에 해당하는 1 ℓ당 60 내지 140의 구리,60 to 140 copper per liter, corresponding to 117 to 272 g of CuCO 3 per liter,
1 ℓ당 100 내지 250 g의 (NH4)2CO3에 해당하는 1 ℓ당 62 내지 156 g의 탄산염,62 to 156 g of carbonate per liter, corresponding to 100 to 250 g of (NH 4 ) 2 CO 3 per liter,
1 ℓ당 0.4 내지 0.8 ℓ의 암모니아 용액,0.4-0.8 L ammonia solution per 1 L,
0.4 내지 0.6 ℓ의 물,0.4 to 0.6 L of water,
1 ℓ당 200 내지 1,500 ㎎의 오산화바나듐,200-1500 mg vanadium pentoxide per liter
1 ℓ당 5 내지 200 ㎎의 4-브로모아세틸비페닐.5-200 mg 4-bromoacetylbiphenyl per liter.
용액 번호 2: Solution number 2 :
1 ℓ당 194 g의 CuCO3에 해당하는 1 ℓ당 100 g의 구리,100 g of copper per liter equal to 194 g of CuCO 3 per liter,
1 ℓ당 175 g의 (NH4)2CO3에 해당하는 1 ℓ당 109 g의 탄산염,109 g of carbonate per liter equal to 175 g of (NH 4 ) 2 CO 3 per liter,
1 ℓ당 0.5 ℓ의 암모니아 용액,0.5 liter of ammonia solution per liter
0.5 ℓ의 물,0.5 L of water,
1 ℓ당 1,100 ㎎의 오산화바나듐,1,100 mg of vanadium pentoxide per liter
1 ℓ당 70 ㎎의 4-브로모아세틸비페닐.70 mg 4-bromoacetylbiphenyl per liter.
Claims (15)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TNSN.05.283 | 2005-11-10 | ||
TN05283 | 2005-11-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20080075148A true KR20080075148A (en) | 2008-08-14 |
Family
ID=37982804
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020087013509A KR20080075148A (en) | 2005-11-10 | 2006-11-09 | Recyclable etching solution |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP2010695A2 (en) |
JP (1) | JP2009516071A (en) |
KR (1) | KR20080075148A (en) |
CN (1) | CN101443480A (en) |
DE (1) | DE102006036888A1 (en) |
WO (1) | WO2007055669A2 (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102019430B (en) * | 2009-09-18 | 2012-09-05 | 福建师范大学福清分校 | Method for recovering copper from alkaline etching waste liquid and recycling alkaline etching liquid |
CN103602986B (en) * | 2011-03-04 | 2015-07-29 | 侯延辉 | A kind of acidic etching liquid |
CN106702387A (en) * | 2015-11-18 | 2017-05-24 | 陶克(苏州)机械设备有限公司 | On-line alkaline ammonium sulfate etching waste liquid cyclic regeneration system |
CN105603434B (en) * | 2016-03-20 | 2018-04-13 | 华南理工大学 | A kind of method of photocatalysis PCB acidic etching liquid recyclings |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4311551A (en) * | 1979-04-12 | 1982-01-19 | Philip A. Hunt Chemical Corp. | Composition and method for etching copper substrates |
DE3429902A1 (en) * | 1984-08-14 | 1986-02-27 | Hans Höllmüller Maschinenbau GmbH & Co, 7033 Herrenberg | METHOD FOR ETCHING COPPER FILMS ON BOARDS UNDER ELECTROLYTIC RECOVERY OF COPPER FROM THE ACET SOLUTION |
AT395177B (en) * | 1990-07-05 | 1992-10-12 | Provera Gmbh | RESOLUTION |
DE19800605A1 (en) * | 1998-01-12 | 1999-07-15 | Helmar Haug | Ammoniacal sulfate solution for etching copper clad circuit boards and other copper or copper alloy articles |
DE102004030924A1 (en) * | 2004-06-25 | 2006-01-19 | Elo-Chem-Csm Gmbh | Electrolytically regenerable etching solution |
-
2006
- 2006-08-04 DE DE102006036888A patent/DE102006036888A1/en not_active Withdrawn
- 2006-11-09 EP EP06824664A patent/EP2010695A2/en not_active Withdrawn
- 2006-11-09 WO PCT/TN2006/000001 patent/WO2007055669A2/en active Application Filing
- 2006-11-09 JP JP2008539995A patent/JP2009516071A/en active Pending
- 2006-11-09 KR KR1020087013509A patent/KR20080075148A/en not_active Application Discontinuation
- 2006-11-09 CN CNA2006800418069A patent/CN101443480A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
WO2007055669A2 (en) | 2007-05-18 |
DE102006036888A1 (en) | 2007-05-16 |
JP2009516071A (en) | 2009-04-16 |
WO2007055669A3 (en) | 2007-11-01 |
CN101443480A (en) | 2009-05-27 |
EP2010695A2 (en) | 2009-01-07 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR20080075148A (en) | Recyclable etching solution | |
US10882756B2 (en) | Regeneration of etch solutions containing trivalent manganese in acid media | |
US4437928A (en) | Dissolution of metals utilizing a glycol ether | |
KR20070061518A (en) | Electrolytically recoverable etching solution | |
US4130455A (en) | Dissolution of metals-utilizing H2 O2 -H2 SO4 -thiosulfate etchant | |
US4233113A (en) | Dissolution of metals utilizing an aqueous H2 O2 -H2 SO4 -thioamide etchant | |
US4236957A (en) | Dissolution of metals utilizing an aqueous H2 SOY --H2 O.sub. -mercapto containing heterocyclic nitrogen etchant | |
KR920006351B1 (en) | Composition and method of metal dissolution utilizing upsilon-caprolactam | |
US6129858A (en) | Etching solution | |
KR920006353B1 (en) | Composition and method of metal dissolution utilizing pyrrolidone | |
KR920006354B1 (en) | Composition and method of metal dissolution utilizing a furan derivative | |
US4233111A (en) | Dissolution of metals utilizing an aqueous H2 SO4 -H2 O2 -3-sulfopropyldithiocarbamate etchant | |
JP2002129359A (en) | Method for etching metallic tin or tin alloy, and etching solution for metallic tin or tin alloy | |
US4525240A (en) | Dissolution of metals utilizing tungsten | |
US4233112A (en) | Dissolution of metals utilizing an aqueous H2 SO4 -H2 O2 -polysulfide etchant | |
US4437927A (en) | Dissolution of metals utilizing a lactone | |
JP2004277225A (en) | Decomposition and removal method of ammonia nitrogen in nickel sulfate aqueous solution |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |