JP2009516071A - Recyclable etching solution - Google Patents

Recyclable etching solution Download PDF

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JP2009516071A
JP2009516071A JP2008539995A JP2008539995A JP2009516071A JP 2009516071 A JP2009516071 A JP 2009516071A JP 2008539995 A JP2008539995 A JP 2008539995A JP 2008539995 A JP2008539995 A JP 2008539995A JP 2009516071 A JP2009516071 A JP 2009516071A
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etching solution
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etching
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ドリディ カリム ナヒディ
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イブ リサイクリング エス・エー・アール・エル
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/32—Alkaline compositions
    • C23F1/34—Alkaline compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/02—Etching, surface-brightening or pickling compositions containing an alkali metal hydroxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/46—Regeneration of etching compositions
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • H05K3/067—Etchants

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • ing And Chemical Polishing (AREA)
  • Catalysts (AREA)

Abstract

作業の間に銅濃度を減少させることで、再生利用可能なエッチング水溶液である。この溶液は、特に、プリント回路用或いは銅金属を使用する産業における銅エッチングに使用される。この溶液は、一般に水、アンモニア、炭酸銅および炭酸アンモニウムからなり、さらに補助触媒として、ブロムアセチルビフェニルとその誘導体を含まなければならない。  It is a recyclable etching aqueous solution by reducing the copper concentration during work. This solution is used in particular for copper etching in printed circuits or in industries using copper metal. This solution generally consists of water, ammonia, copper carbonate and ammonium carbonate and must also contain bromoacetylbiphenyl and its derivatives as cocatalysts.

Description

本発明は、銅濃度を減少させることで再生利用可能なエッチング水溶液に関するものである。特に、プリント回路産業や銅金属を使用する産業における銅エッチングに使用されるエッチング水溶液に関するものである。この水溶液は、一般にアンモニア、炭酸銅、炭酸アンモニウムおよび水からなる。   The present invention relates to an aqueous etching solution that can be recycled by reducing the copper concentration. In particular, the present invention relates to an aqueous etching solution used for copper etching in the printed circuit industry and industries using copper metal. This aqueous solution generally consists of ammonia, copper carbonate, ammonium carbonate and water.

従来、溶液は異なる形態で存在していた。これらの溶液は、特にプリント回路基板のエッチングの用途に提案されたものである。このようなエッチング処理の促進は、プリント回路基板の製造にとって重量な役割を果たしている。プリント回路基板の製造では、エッチング加工された銅と回収された銅で、量の釣り合いを取るために、銅の回収を促進させる必要がある。また、同一の素子を供給するために、エッチングの品質の連続性を保証する上で、エッチング処理の安定性も重要な役割を果たしている。   Traditionally, solutions existed in different forms. These solutions have been proposed especially for printed circuit board etching applications. Such acceleration of the etching process plays a significant role in the manufacture of printed circuit boards. In the production of printed circuit boards, it is necessary to promote the recovery of copper in order to balance the amount of etched copper and recovered copper. In order to supply the same element, the stability of the etching process also plays an important role in ensuring the continuity of the etching quality.

プリント回路の製造工程では、レジスト膜を形成するため、セリグラフィー或いは感光処理によって回路パターンがマスクされる。そして、マスクによって被覆されていない銅面が、好適なエッチング溶液によってエッチングされる。   In a printed circuit manufacturing process, a circuit pattern is masked by serigraphy or photosensitive processing in order to form a resist film. The copper surface not covered by the mask is then etched with a suitable etching solution.

他の例として、両面プリント回路の製造では、トラックと穴が金属膜レジストによって保護される。有機レジストは剥離され、銅は好適な溶液によってエッチングされる。従って、トラックと穴は、アンモニア溶液と銅によるエッチング処理の間、金属膜レジストによって保護される。   As another example, in the manufacture of double-sided printed circuits, tracks and holes are protected by a metal film resist. The organic resist is stripped and the copper is etched with a suitable solution. Thus, the tracks and holes are protected by the metal film resist during the etching process with the ammonia solution and copper.

不利な点としては、エッチングの速度が限られること、エッチング溶液の処理の再生プロセスに時間がかかること、不安定な化学的パラメータによる製品への影響が挙げることができる。   Disadvantages include limited etching rates, time-consuming regeneration processes for etching solutions, and the impact of unstable chemical parameters on the product.

本発明は、エッチング速度を増すこと、化学的パラメータが安定した状態で、エッチング処理で使用された溶液の再生および再利用を可能とすることを課題とする。   It is an object of the present invention to increase the etching rate and to allow the solution used in the etching process to be regenerated and reused with stable chemical parameters.

この課題を解決するため、エッチング溶液は、他の触媒成分として、ブロムアセチルビフェニル（bromacetylbiphenyl）とその誘導体を含有する。   In order to solve this problem, the etching solution contains bromacetylbiphenyl and its derivatives as other catalyst components.

本発明では、使用済みエッチング溶液の再生処理にも、触媒としてブロムアセチルビフェニルが使用されるので、上述した処理が促進されることが判明している。ブロムアセチルビフェニルは、反応速度の大幅な上昇を抑え、銅の再生処理を促進する役割を果たしている。   In the present invention, it has been found that the above-described treatment is promoted because bromoacetylbiphenyl is also used as a catalyst in the regeneration treatment of the used etching solution. Bromine acetylbiphenyl suppresses a significant increase in reaction rate and plays a role in promoting copper regeneration treatment.

このように、促進剤および補助触媒として、エッチング溶液中のブロムアセチルビフェニルの量を５〜２００ｍｇ／リットル、好適には７０ｍｇ／リットルとして使用する。   Thus, as an accelerator and cocatalyst, the amount of bromoacetylbiphenyl in the etching solution is used as 5-200 mg / liter, preferably 70 mg / liter.

望ましくは４−ブロムアセチルビフェニルＣ14Ｈ11ＢｒＯである、ブロムアセチルビフェニルは、再生処理における再生で、錯体［Ｃｕ（ＮＨ3）2］+が酸化して、錯体［Ｃｕ（ＮＨ3）4］++に変化することをサポートする。従って、再生処理が促進される。［Ｃｕ（ＮＨ3）2］+イオンは、エッチング処理の速度を遅らせ、銅の再利用性を高める。このためエッチング処理では［Ｃｕ（ＮＨ3）2］+が酸化剤により酸化され、［Ｃｕ（ＮＨ3）4］++になり、再生処理では［Ｃｕ（ＮＨ3）2］+が安定剤により安定化されなければならない。エッチング処理では、次のような反応が起こる。 Desirably, 4-bromoacetylbiphenyl C 14 H 11 BrO is bromacetylbiphenyl, and the complex [Cu (NH 3 ) 2 ] + is oxidized by the regeneration in the regeneration treatment, and the complex [Cu (NH 3 ) 4 ]. Support changing to ++ . Therefore, the reproduction process is promoted. [Cu (NH 3 ) 2 ] + ions slow down the etching process and increase the reusability of copper. Therefore, in the etching process, [Cu (NH 3 ) 2 ] + is oxidized by the oxidizing agent to become [Cu (NH 3 ) 4 ] ++ , and in the regeneration process, [Cu (NH 3 ) 2 ] + is added by the stabilizer. Must be stabilized. In the etching process, the following reaction occurs.

Ｃｕ＋［Ｃｕ（ＮＨ3）4］++→２［Ｃｕ（ＮＨ3）2］+
再生部分は、この反応に従ってＮＨ4 +、ＮＨ3、酸素錯体とともに作用する。 Cu + [Cu (NH 3 ) 4 ] ++ → 2 [Cu (NH 3 ) 2 ] +
The regenerating moiety acts with NH 4 + , NH 3 , and oxygen complex according to this reaction.

４［Ｃｕ（ＮＨ3）4］++＋４ＮＨ3＋４ＮＨ+＋Ｏ2→４［Ｃｕ（ＮＨ3）4］++＋２ＨＯ
再利用部分は、これらの反応に従って電流により作用する。 4 [Cu (NH 3 ) 4 ] ++ + 4NH 3 + 4NH + + O 2 → 4 [Cu (NH 3 ) 4 ] ++ + 2HO
The recycle part acts on the current according to these reactions.

［Ｃｕ（ＮＨ3）2］+ → 1/2ＣＵ＋1/2［Ｃｕ（ＮＨ3）4］++
［Ｃｕ（ＮＨ3）２］+＋ｅ− → ＣＵ＋２ＮＨ3
［Ｃｕ（ＮＨ3）4］++＋２ｅ− → ＣＵ＋４ＮＨ3
銅の酸化速度が増加するのに従って、エッチングの処理速度が増加する。ペンタバナジウムオキシドまたは他のバナジウムの成分を触媒として使用して、エッチング速度を増加させた。 [Cu (NH 3 ) 2 ] + → 1 / 2CU + 1/2 [Cu (NH 3 ) 4 ] ++
[Cu (NH 3 ) 2 ] + + e − → CU + 2NH 3
[Cu (NH 3 ) 4 ] ++ + 2e − → CU + 4NH 3
As the copper oxidation rate increases, the etch rate increases. Pentavanadium oxide or other vanadium components were used as catalysts to increase the etch rate.

さらに、本発明によると、エッチング速度を増加させるためにバナジウムを含む触媒と、アセチルビフェニルを含む補助触媒を用いることで、使用したエッチング溶液の酸化速度を増加させ、さらに再利用速度を増加させる安定剤としても機能させることができる。   Furthermore, according to the present invention, by using a catalyst containing vanadium and an auxiliary catalyst containing acetylbiphenyl to increase the etching rate, the oxidation rate of the used etching solution is increased, and the recycling rate is further increased. It can also function as an agent.

従って、エッチング速度と使用済みエッチング溶液の再生速度が増加し、同時に処理の安定性と再利用速度の増加が実現される。   Therefore, the etching rate and the regeneration rate of the used etching solution are increased, and at the same time, the processing stability and the reuse rate are increased.

従って、プリント回路の製造では、本発明は大きな役割を果たすことになる。   Therefore, the present invention plays a major role in the manufacture of printed circuits.

以下に示す溶液によって、最良の結果が得られることが証明されている。   The following solutions have proven to give the best results.

溶液Ｎo１：
１１７〜２７２ｇ／リットルのＣｕＣＯ３に対応する、６０〜１４０ｇ／リットルの銅
１００〜２５０ｇ／リットルの（ＮＨ４）２ＣＯ３に対応する、６２〜１５６ｇ／リットルの炭酸塩
０．４〜０．８リットル／リットルのアンモニア性溶液
０．４〜０．６リットルの水
２００〜１５００ｍｇ／リットルのペンタ−バナジウムオキシド
５〜２００ｍｇ／リットルの４−ブロムアセチルビフェニル
溶液Ｎo２：
１９４ｇ／リットルのＣｕＣＯ３に対応する、１００ｇ／リットルの銅
１７５ｇ／リットルの（ＮＨ４）２ＣＯ３に対応する、１０９ｇ／リットルの炭酸塩
０．５リットル／リットルのアンモニア性溶液
０．５リットルの水
１１００ｍｇ／リットルのペンタ−バナジウムオキシド
７０ｍｇ／リットルの４−ブロムアセチルビフェニル Solution No1:
Corresponding to 117-272 g / l CuCO 3 , 60-140 g / l copper 100-250 g / l (NH 4 ) 2 CO 3 corresponding 62-156 g / l carbonate 0.4-0.8 Liter / liter ammoniacal solution 0.4-0.6 liter water 200-1500 mg / liter penta-vanadium oxide 5-200 mg / liter 4-bromoacetylbiphenyl solution No2:
Corresponding to CuCO 3 of 194 g / l, 100 g / l of copper 175 g / l corresponding to (NH 4) 2CO 3, 109g / l of carbonate 0.5 liters / liter of ammoniacal solution 0.5 liters of Water 1100 mg / liter penta-vanadium oxide 70 mg / liter 4-bromoacetylbiphenyl

Claims (15)

化学的に且つ電気分解によって再生利用可能で、特に、プリント回路や銅産業における銅のエッチングに使用され、一般に水、アンモニア、炭酸銅および炭酸アンモニウムからなるエッチング溶液であって、
補助触媒として、ブロムアセチルビフェニルと、その誘導体と、を含むことを特徴とするエッチング溶液。 Recyclable chemically and by electrolysis, particularly used for etching copper in the printed circuit and copper industries, and generally an etching solution consisting of water, ammonia, copper carbonate and ammonium carbonate,
An etching solution comprising bromoacetylbiphenyl and a derivative thereof as an auxiliary catalyst. 約１０〜１００ｍｇ／リットルのブロムアセチルビフェニルおよびその誘導体を添加したことを特徴とする請求項１に記載のエッチング溶液。   The etching solution according to claim 1, wherein about 10 to 100 mg / liter of bromoacetylbiphenyl and a derivative thereof are added. 約４０ｍｇ／リットルのブロムアセチルビフェニルを含むことを特徴とする請求項１または２に記載のエッチング溶液。   The etching solution according to claim 1, comprising about 40 mg / liter of bromoacetylbiphenyl. ４−ブロムアセチルビフェニルＣ14Ｈ11ＢｒＯをエッチング溶液触媒に使用することを特徴とする請求項１から３のいずれか一項に記載のエッチング溶液。 The etching solution according to any one of claims 1 to 3, wherein 4-bromoacetylbiphenyl C 14 H 11 BrO is used as an etching solution catalyst. 前記エッチング溶液のＰＨが、７，８および９の間で調整されることを特徴とする請求項１から４のいずれか一項に記載のエッチング溶液。   The etching solution according to any one of claims 1 to 4, wherein the pH of the etching solution is adjusted between 7, 8, and 9. 前記エッチング溶液は、６０〜１４０ｇ／リットルの銅イオンを含むことを特徴とする請求項１から５のいずれか一項に記載のエッチング溶液。   The etching solution according to any one of claims 1 to 5, wherein the etching solution contains 60 to 140 g / liter of copper ions. 前記エッチング溶液は、１１７〜２７２ｇ／リットルのＣｕＣＯ3を含むことを特徴とする請求項１から６のいずれか一項に記載のエッチング溶液。 The etching solution according to claim 1, wherein the etching solution contains 117 to 272 g / liter of CuCO 3 . １００〜２５０ｇ／リットルの（ＮＨ4）２ＣＯ3に対応して、６２〜１５６ｇ／リットルの炭酸塩を含むことを特徴とする請求項１から７のいずれか一項に記載のエッチング溶液。 8. The etching solution according to claim 1, comprising 62 to 156 g / l of carbonate corresponding to 100 to 250 g / l of (NH 4 ) 2 CO 3 . ２５％のアンモニアを０．３〜０．６リットル／リットル含むことを特徴とする請求項１から８のいずれか一項に記載のエッチング溶液。   9. Etching solution according to any one of claims 1 to 8, characterized in that it contains 0.3% to 0.6 l / l of 25% ammonia. ０．３〜０．６リットル／リットルの水を含むことを特徴とする請求項１から９のいずれか一項に記載のエッチング溶液。   The etching solution according to claim 1, comprising 0.3 to 0.6 liter / liter of water. バナジウムまたはバナジウムに対応する他の成分を２００〜１５００ｍｇ／リットル含むことを特徴とする請求項１から１０のいずれか一項に記載のエッチング溶液。   The etching solution according to any one of claims 1 to 10, comprising vanadium or another component corresponding to vanadium in an amount of 200 to 1500 mg / liter. 約１１００ｍｇ／リットルのペンタ−バナジウムオキシド（Ｖ2Ｏ5）を含むことを特徴とする請求項１１に記載のエッチング溶液。 Penta about 1100 mg / l - etching solution according to claim 11, characterized in that it comprises a vanadium oxide (V 2 O 5). 約０．５〜１００ｇ／リットルの硝酸塩 ＮＯ3 -を含むことを特徴とする請求項１から１２のいずれか一項に記載のエッチング溶液。 The etching solution according to claim 1, comprising about 0.5 to 100 g / l of nitrate NO 3 − . 選択により、Ｏ2または空気で連続的または不連続的にガス化されることを特徴とする請求項１から１３のいずれか一項に記載のエッチング溶液。 The etching solution according to any one of claims 1 to 13, wherein the etching solution is gasified continuously or discontinuously with O 2 or air depending on selection. ４０〜６０度Ｃの温度に調節されることを特徴とする請求項１から１４のいずれか一項に記載のエッチング溶液。   The etching solution according to claim 1, wherein the etching solution is adjusted to a temperature of 40 to 60 degrees C.
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