KR20080074589A - Method for packaging semiconductor device by electrostatic and semiconductor package using the same - Google Patents

Abstract

A method for packaging a method for packaging a semiconductor device using electromagnetic field and a semiconductor package manufactured by the same are provided to prevent the lamination of a filler at an electrode connection portion by performing a charge process on an underfill resin and a bump electrode. A charge process is performed on a surface of an underfill resin(130) which is pre-cured, and then a filler is absorbed on the surface of the underfill resin. The first semiconductor device(110) is provided with a bump electrode. A surface of the bump electrode is processed with a charge identical to the filler. The underfill resin is laminated on a surface of the first semiconductor device at which the bump electrode is formed. A second semiconductor device(120) is adhered to the laminated underfill resin surface and the underfill resin is cured to complete a curing process. In the lamination process, the filler of the underfill resin and the bump electrode are arranged on a same layer by an electromagnetic repulsive force instead of being laminated on the surface of the first semiconductor device.

Description

Method for packaging semiconductor device by electrostatic and Semiconductor package using the same}

The following drawings, which are attached to this specification, illustrate exemplary embodiments of the present invention, and together with the detailed description of the present invention, serve to further understand the technical spirit of the present invention. It should not be construed as limited to.

1 is a view showing a semiconductor package manufactured using a conventional low-flow underfill technology.

2 is a view showing a semiconductor package using an underfill resin containing a conventional silica filler.

3 is a cross-sectional view of a semiconductor package manufactured by a semiconductor packaging method using an electromagnetic field according to an exemplary embodiment of the present invention.

4 to 7 are diagrams showing the states of each process of the semiconductor packaging method using the electromagnetic field according to an embodiment of the present invention.

8 and 9 are exemplary views showing a process of a semiconductor packaging method using an electromagnetic field according to another embodiment of the present invention.

10 is an exemplary view showing a process of a semiconductor packaging method using an electromagnetic field according to another embodiment of the present invention.

<Description of Major Reference Marks in Drawing>

110: first semiconductor device 115: bump electrode

120: second semiconductor device 130: underfill resin

135: filler

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of mounting a semiconductor device so as to be electrically connected. More particularly, the present invention relates to a semiconductor packaging method using a low flow underfill method. It is about.

In general, packaging technologies for integrated circuits in the semiconductor industry are being developed to increase the demand for miniaturization and miniaturization and to increase mounting reliability. In other words, the demand for smaller and more sophisticated electronics continues to drive the electronics industry towards improved integrated circuit packages that can support higher input / output (I / O) densities as well as improved performance in smaller die areas. It is pushing.

According to these requirements, underfill technologies using underfill in semiconductor mounting are being developed. Such underfill technology is one of the important factors for the success of flip chip technology, and continues to be developed through the development of underfill technology.

Among the underfill technologies, the low-flow underfill technology allows the solder bumper reflow process and the underfill curing process to be performed simultaneously. This method has no limitation on the viscosity of the underfill encapsulant and the size of the semiconductor package, and is a technology having high productivity and efficiency of the process compared to the conventional method. 1 shows a semiconductor package fabricated using this low flow underfill technology. As in FIG. 1, the semiconductor chip 1 and the substrate 3 are bonded by the underfill resin 4. The semiconductor chip 1 and the substrate 3 are electrically connected by the solder bumps 2. At this time, the underfill resin 4 has a problem that thermal stress is generated in the molded article due to the large coefficient of thermal expansion of the epoxy resin, and mechanical defects such as deformation, mold release, and cracking are likely to occur.

In order to improve this problem, a method of improving the mechanical properties by using a silica filler in the underfill resin was used. 2 is a view showing a semiconductor package using an underfill resin containing such a silica filler. Referring to FIG. 2, the underfill resin 4 containing the silica filler 5 was bonded between the semiconductor chip 1 on which the solder bumps 2 were formed and the substrate 3. In this method, the mechanical properties of the underfill resin 4 are secured due to the silica filler 5, thereby reducing mechanical defects such as deformation and mold release, but the silica filler 5 is bonded to the solder bumps 2 and the substrate during adhesion. There arises a problem of being laminated on the connection part 6 of 3). Due to the stacking of the silica filler 5 on the connection portion 6 of the substrate 3 and the solder bumps 2, the electrical characteristics of the semiconductor package are degraded, which in turn leads to a problem that the yield of the assembly is lowered.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and provides a semiconductor packaging method capable of preventing a filler from being stacked on an electrode even when the semiconductor devices are bonded using an underfill resin containing a filler. There is this.

Another object of the present invention is to provide a method capable of satisfying both the electrical characteristics of the connection electrode and the mechanical characteristics of the junction when fabricating a semiconductor package using a low flow underfill or wafer level underfill technique.

Other objects and advantages of the invention will be described below and will be appreciated by the embodiments of the invention. Furthermore, the objects and advantages of the present invention can be realized by means and combinations indicated in the appended claims.

A semiconductor packaging method using an electromagnetic field according to the present invention for achieving the above object is a method for packaging the semiconductor devices through an underfill resin which is an encapsulant used in flip-chip semiconductor mounting, ( a) performing a charge treatment on the surface of the precured underfill resin and adsorbing a filler on the surface; (b) treating the surface of the bump electrode with the same charge as the filler in a first semiconductor device having a bump electrode; (c) laminating the underfill resin to a surface on which a bump electrode of the first semiconductor device is formed; And (d) adhering a second semiconductor device to the laminated underfill resin surface and curing the underfill resin to completely cure it.

Preferably, in step (c), the filler of the underfill resin and the bump electrode are arranged in the same layer without lamination by electromagnetic repulsive force during lamination.

In addition, the charge treatment is preferably a polymer electrolyte treatment that is immersed in an aqueous polymer electrolyte solution having a positive or negative charge so that the positive or negative charge is charged.

Furthermore, the positively charged polymer is a nitrogen-containing polymer, preferably polyallylamine hydrochloride, polydiaryldimethylammonium chloride, polylysine, or polyethyleneimine.

In addition, the negatively charged polymer is preferably a polymer containing any one of a carboxylic acid group, a sulfonic acid group, a nitric acid group, and a phosphoric acid group.

In particular, the underfill resin is preferably a polymer resin having a property of precure between 120 ℃ to 150 ℃ and completely cured between 200 ℃ to 250 ℃.

In addition, the underfill resin is preferably a polymer resin of any one of epoxy, polyimide, polyester and polyacrylate.

Preferably, the filler is in the form of a colloid of any one of silica (SiO ₂ ), silicon (), titanium dioxide (), polystyrene, and polymethyl methacrylate.

In addition, the bump electrode is preferably made of any one material of gold (Au), chromium (Cr), aluminum (Al), and tin (Sn).

Preferably, the first semiconductor device is a flip chip or a microchip, and the second semiconductor device is a wiring substrate.

According to another aspect of the present invention, a method of packaging semiconductor devices through an underfill resin, which is an encapsulant used for flip-chip semiconductor mounting, comprising: (a) coating an underfill resin on a first semiconductor device; Precuring; (b) performing a charge treatment on the surface of the precured underfill resin and adsorbing a filler on the surface; (c) treating the surface of the bump electrode with the same charge as the filler in a second semiconductor device having a bump electrode; And (d) bonding the first semiconductor device and the second semiconductor device to face the underfill resin coated surface and the bump electrode surface, and curing the underfill resin to completely cure the underfill resin. A semiconductor packaging method using an electromagnetic field is provided.

Preferably, the step (d) is carried out in which the filler of the underfill resin and the bump electrode are arranged in the same layer without being laminated by the electromagnetic repulsive force during adhesion.

According to another aspect of the present invention, a method of packaging semiconductor devices through an underfill resin, which is an encapsulant used in flip-chip semiconductor mounting, comprising: (a) a method of precuring underfill resin Performing charge treatment on the surface and adsorbing a filler on the surface; (b) treating the surface of the bump electrode with the same charge as the filler in a first semiconductor device having a bump electrode; (c) laminating the underfill resin to a surface on which a bump electrode of the first semiconductor device is formed; (d) forming an underfill resin layer on the surface of the second semiconductor device where filler adsorption and charge treatment are performed; And (e) adhering the first semiconductor device and the second semiconductor device to each other so that an underfill resin layer faces each other, and curing the underfill resin to completely cure the underfill resin. do.

Preferably, at the time of lamination and adhesion of the semiconductor device, the filler of the underfill resin and the bump electrode are arranged in the same layer without being laminated by electromagnetic repulsive force.

According to another aspect of the invention, there is provided a semiconductor package manufactured by the above method.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Prior to this, terms or words used in the present specification and claims should not be construed as being limited to the common or dictionary meanings, and the inventors should properly explain the concept of terms in order to best explain their own invention. Based on the principle that can be defined, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention. Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, which can be replaced at the time of the present application It should be understood that there may be various equivalents and variations.

3 is a cross-sectional view of a semiconductor package manufactured by a semiconductor packaging method using an electromagnetic field according to an exemplary embodiment of the present invention.

As illustrated in FIG. 3, the semiconductor package includes a first semiconductor device 110 having a bump electrode 115 on one surface thereof, a second semiconductor device 120 having a second electrode on one surface thereof, and the first semiconductor device 110 having the second electrode formed thereon. An underfill resin 130 containing a filler 135 interposed between the first and second semiconductor devices 110 and 120 to electrically connect the bump electrode 115 and the second electrode.

The first semiconductor device 110 is a flip chip or a microchip mounted on the second semiconductor device 120 by a semiconductor mounting process, and a plurality of upper bump electrodes 115 are arranged in a fine pitch of a predetermined pattern. It is an electrode. The bump electrode 115 is a spherical solder ball or solder bump. In addition, the bump electrode 115 is made of a material such as gold (Au), chromium (Cr), aluminum (Al), tin (Sn), or the like.

The second semiconductor device 120 is a wiring substrate electrically connected to the first semiconductor device 110 by a semiconductor mounting process, and the plurality of second electrodes are arranged in the same pattern as the bump electrodes 115. Strap electrode or pad electrode.

The underfill resin 130 is a semiconductor encapsulant or a polymer resin for semiconductor bonding, and includes a filler 135 to complement mechanical properties. The underfill resin 130 is a polymer resin and may be precure between 120 ° C and 150 ° C, and a polymer resin having a property of being fully cured between 200 ° C and 250 ° C is used. The precure is a step of curing the state of the polymer resin in a semi-cured state. Examples of the underfill resin 130 include polymer resins such as epoxy, polyimide, polyester, and polyacrylate. In an embodiment of the present invention, the underfill resin 130 is completely cured by a curing process in a bonding process for semiconductor mounting to bond between two semiconductor devices 110 and 120.

The filler 135 is contained in the underfill resin 130, and the two semiconductor devices 110 and 120 perform a function of preventing and supplementing mechanical degradation of the underfill resin 130 during bonding. The filler 135 is present in a colloidal form in the resin, and silica (SiO ₂ ), silicon (Si), titanium dioxide (TiO ₂ ), polystyrene, polymethyl methacrylate, and the like may be used.

In the exemplary embodiment of the present invention, the filler 135 included in the underfill resin 130 at the bonding surface between the first semiconductor device 110 and the second semiconductor device 120 may have the bumps as shown in the drawing. It is not stacked perpendicular to the electrode 115 but arranged in the same layer. That is, the filler 135 is not laminated on the contact portion between the bump electrode 115 provided in the first semiconductor device 110 and the pad electrode (not shown) of the second semiconductor device 120. 115 are arranged on a horizontal plane between them. Due to the arrangement structure of the filler 135 and the bump electrode 115, the electrical reliability of the semiconductor package may not be reduced after the packaging process, thereby maintaining the bonding reliability.

In the semiconductor package described above, the bump electrode 115 may be provided in the second semiconductor device 120 instead of the first semiconductor device 110. That is, the bump electrode may be provided on the substrate, or the bump electrode may be provided on the semiconductor chip. This may be selected and provided in consideration of the ease of operation according to the semiconductor packaging process and manufacturing process.

Next, a packaging method and process for manufacturing the above-described semiconductor package will be described with reference to FIGS. 4 to 7.

4 to 7 are diagrams showing the states of each process of the semiconductor packaging method using the electromagnetic field according to an embodiment of the present invention.

In the semiconductor packaging method using the electromagnetic field according to the exemplary embodiment of the present invention, first, as shown in FIG. 4, the underfill resin 130 is semi-cured and cured, and the surface is charged. After the charge treatment, the filler 135 is adsorbed on the surface to prepare an underfill resin layer. At this time, the surface of the outermost side of the filler 135 adsorbed and the prefilled underfill resin 130 is charged with a positive charge or a negative charge. Here, the charge treatment is a process of immersing the precured underfill resin 135 in a polymer electrolyte solution having a positive charge or a negative charge so that the positive or negative charge is charged on the surface thereof. The electrolyte solution is prepared at a concentration of 1 mg / ml.

Next, the first semiconductor device 110 having the bump electrodes 115 is prepared. The above-described charge treatment is performed on the surface of the bump electrode 115 of the prepared first semiconductor device 110. In this case, a charge process is performed such that a charge equal to the charge charged in the filler 135 is charged on the bump electrode 115 surface.

Nitrogen-containing polymer is used as the polymer having a positive charge in the aqueous solution of the polymer electrolyte in the above-described charge treatment process. For example, polymers such as polyallylamine hydrochloride, polydiaryldimethylammonium chloride, polylysine, polyethyleneimine and the like can be used. As the polymer having a negative charge, a polymer containing a carboxylic acid group, a sulfonic acid group, a nitric acid group, a phosphoric acid group, or the like may be used.

The first semiconductor device 110 and the underfill resin 130 processed as described above are subjected to a lamination bonding process. In this case, the electromagnetic repulsive force as shown in FIG. 5 is applied. Referring to FIG. 5, the underfill resin 130 on which the negatively charged filler 135 is adsorbed on the surface of the first semiconductor device 110 in which the bump electrode 115 is negatively charged is laminated. During lamination, the bump electrode 115 and the surface on which the filler 135 is adsorbed are faced to each other so as to face each other. At this time, the electromagnetic repulsive force acts due to the same charges charged on the filler 135 and the bump electrode 115, respectively. As a result, after the underfill resin 130 is laminated on the first semiconductor device 110, as shown in FIG. 6, the filler 135 and the bump electrode 115 are not stacked in the vertical direction, but the same on the horizontal plane. Arranged in layers.

As shown in FIG. 6, when the underfill resin 130 is laminated on the first semiconductor device 110, the filler 135 is positioned near the surface of the first semiconductor device 110. Thereafter, as shown in FIG. 7, the second semiconductor device 120 is prepared, bonded to the other side of the laminated underfill resin 130, and then cured by completely curing the underfill resin 130. Proceed. At this time, of course, the pad electrode portion of the second semiconductor device 120 and the bump electrode 115 of the first semiconductor device 110 are bonded or compressed to correspond to each other so that the two devices are electrically connected. Of course. The semiconductor package is completed through the semiconductor packaging process as described above. In addition, the first semiconductor device 110 may be a substrate and the second semiconductor device may be a semiconductor chip, and conversely, the first semiconductor device 110 may be a semiconductor chip and the second semiconductor device may be a substrate. This is also to be selectively used according to the convenience of the packaging process or manufacturing process.

Another embodiment of a semiconductor packaging method using an electromagnetic field according to the present invention will be described with reference to FIGS. 8 and 9.

In another embodiment of the present invention, after the underfill resin 130 is laminated on the first semiconductor device 110 as shown in FIG. 6, the second semiconductor device 120 as shown in FIG. 8 is prepared. The second semiconductor device 120 prepared according to another embodiment is prepared by coating the underfill resin on the surface thereof and then adsorbing the filler 135 after the charge treatment is performed. In the second semiconductor device 120 thus prepared, the adsorbed filler 135 is charged positively or negatively due to the charge treatment. At this time, of course, the filler 135 is charged to the same charge as that of the bump electrode 115 in FIG. 6. Here, the surface on which the underfill resin is coated on the second semiconductor device 120 and the filler 135 is adsorbed is a surface in contact with the surface on which the bump electrode 115 of the first semiconductor device 110 is formed. This is the formed surface.

The second semiconductor device 120 prepared as described above is bonded to the surface on which the filler 135 is adsorbed to face the first semiconductor device 110 as shown in FIG. 9. In this case, the bump electrode 115 and the filler 135 are also not vertically stacked due to electromagnetic repulsive action because the same charge is charged. Therefore, the filler 135 is arranged along the contact surface of the second semiconductor device 120, but the filler 135 is not arranged on the contact surface with the bump electrode 115. In addition, the pad electrode (not shown) of the second semiconductor device 120 and the bump electrode 115 of the first semiconductor device 110 are brought into contact with each other so that the two semiconductor devices 110 and 120 may be electrically contacted. It is connected. As described above, the bump electrode 115 of the first semiconductor device 110 and the pad electrode of the second semiconductor device 120 are bonded to correspond to each other. After bonding as described above, the underfill resin 130 is cured and then fully cured to complete the semiconductor packaging process.

Next, another embodiment of the present invention will be described with reference to FIG.

Referring to FIG. 10, the surface of the bump electrode 115 of the first semiconductor device 110 may be charged to prepare a charge. Next, after the underfill resin is coated and precured on the second semiconductor device 120, a charge treatment is performed on the surface of the underfill resin 130 so that the same charge as that on the bump electrode 115 is charged. The filler 135 is adsorbed on the surface of the charged underfill resin 130 so that the filler 135 is also charged. The first semiconductor device 110 and the second semiconductor device 120 prepared as described above are bonded to each other so as to face each electrode. At this time, since the bump electrode 115 and the filler 135 are charged with the same electric charge, electromagnetic repulsive force is not applied to each other so as to be stacked. Therefore, the bump electrode 115 and the electrode of the second semiconductor device can be easily connected. After bonding the two semiconductor devices 110 and 120, the underfill resin 130 is cured and completely cured to complete the semiconductor packaging process. In the detailed description of the present embodiment described above, the description overlapping with the description of other embodiments is omitted.

The terms or words used in this specification and claims are not to be construed as limiting in their usual or dictionary meanings, and the inventors may appropriately define the concept of terms in order to best explain their invention in the best way possible. It should be interpreted as meaning and concept corresponding to the technical idea of the present invention based on the principle that the present invention.

Therefore, the embodiments described in the specification and the drawings shown in the drawings are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, various modifications that can be replaced at the time of the present application It should be understood that there may be equivalents and variations.

As described above, the present invention has the effect of preventing the stacking of fillers on the electrode connection portion through the charge treatment of the underfill resin and the bump electrode during packaging of the semiconductor device, thereby preventing the deterioration of electrical characteristics of the semiconductor device. to provide.

In addition, the filler contained in the underfill resin during packaging of the semiconductor device provides an effect that can complement the mechanical properties of the completed semiconductor package after packaging.

Claims (17)

A method of packaging semiconductor devices through an underfill resin, an encapsulant used for flip-chip semiconductor mounting, (a) performing a charge treatment on the surface of the precured underfill resin and adsorbing a filler on the surface; (b) treating the surface of the bump electrode with the same charge as the filler in a first semiconductor device having a bump electrode; (c) laminating the underfill resin to a surface on which a bump electrode of the first semiconductor device is formed; And (d) adhering a second semiconductor device to the laminated underfill resin surface and curing the underfill resin to completely cure the underfill resin. The method of claim 1, The step (c) is a semiconductor packaging method using an electromagnetic field, characterized in that the filler and the bump electrode of the underfill resin is arranged on the same layer without being laminated by the electromagnetic repulsive force during lamination. The method of claim 1, The charge treatment, A semiconductor packaging method using an electromagnetic field, characterized in that the polymer electrolyte treatment to be immersed in a polymer electrolyte solution having a positive or negative charge so that the positive or negative charge. The method of claim 3, wherein The polymer having a positive charge is a semiconductor packaging method using an electromagnetic field, characterized in that the nitrogen-containing polymer. The method of claim 3, wherein The positively charged polymer is polyallylamine hydrochloride, polydiaryldimethylammonium chloride, polylysine and polyethyleneimine any one of the semiconductor packaging method using an electromagnetic field. The method of claim 3, wherein The negatively charged polymer is a semiconductor packaging method using an electromagnetic field, characterized in that the polymer containing any one of a carboxylic acid group, sulfonic acid group, nitric acid group and phosphoric acid group. The method of claim 1, The underfill resin is a semiconductor packaging method using an electromagnetic field, characterized in that the polymer resin having a characteristic of precure between 120 ℃ to 150 ℃ and completely cured between 200 ℃ to 250 ℃. The method of claim 7, wherein The underfill resin is a semiconductor packaging method using an electromagnetic field, characterized in that any one of a polymer resin of epoxy, polyimide, polyester and polyacrylate. The method of claim 1, The filler is a semiconductor packaging method using an electromagnetic field, characterized in that the colloidal form of any one of silica (SiO ₂ ), silicon (), titanium dioxide (), polystyrene, polymethyl methacrylate. The method of claim 1, The bump electrode is a semiconductor packaging method using an electromagnetic field, characterized in that made of any one material of gold (Au), chromium (Cr), aluminum (Al) and tin (Sn). The method of claim 1, The first semiconductor device is a semiconductor packaging method using an electromagnetic field, characterized in that the flip chip or microchip (microchip). The method of claim 1, The second semiconductor device is a wiring substrate (Substrate), characterized in that the semiconductor packaging method using an electromagnetic field. A method of packaging semiconductor devices through an underfill resin, an encapsulant used for flip-chip semiconductor mounting, (a) coating and precuring an underfill resin on the first semiconductor device; (b) performing a charge treatment on the surface of the precured underfill resin and adsorbing a filler on the surface; (c) treating the surface of the bump electrode with the same charge as the filler in a second semiconductor device having a bump electrode; And (d) bonding the first semiconductor device and the second semiconductor device so that the underfill resin coated surface and the bump electrode surface face each other, and curing the underfill resin to completely cure the underfill resin. Semiconductor packaging method using. The method of claim 13, The step (d) is a semiconductor packaging method using an electromagnetic field, characterized in that the filler and the bump electrode of the underfill resin is arranged in the same layer without being laminated by the electromagnetic repulsive force during adhesion. A method of packaging semiconductor devices through an underfill resin, an encapsulant used for flip-chip semiconductor mounting, (a) performing a charge treatment on the surface of the precured underfill resin and adsorbing a filler on the surface; (b) treating the surface of the bump electrode with the same charge as the filler in a first semiconductor device having a bump electrode; (c) laminating the underfill resin to a surface on which a bump electrode of the first semiconductor device is formed; (d) forming an underfill resin layer on the surface of the second semiconductor device where filler adsorption and charge treatment are performed; And (e) adhering the first semiconductor device and the second semiconductor device to each other so that the underfill resin layers face each other, and curing the underfill resin to completely cure the underfill resin layer. The method of claim 15, And the bumper electrode of the underfill resin is arranged on the same layer without being laminated by electromagnetic repulsive force during the lamination and the adhesion of the semiconductor device. A semiconductor package produced by the method according to claim 1.

Images