KR20080062077A - Method and apparatus for treating the substrate - Google Patents

Abstract

A method and an apparatus for processing a substrate are provided to deposit a film having a uniform thickness on a wafer by increasing process uniformity with respect to the entire surface of the substrate. A source gas is supplied to a process chamber(10), and then the source gas is excited to generate a plasma. A thin film is deposited on a substrate laid on a support plate which is installed in the process chamber, by using the generated plasma. The substrate is rotated together with the support plate while the thin film is deposited on the substrate. Plural process parameters comprising rotational displacement of the support plate are set prior to the process. The support plate is stationary during the process.

Description

Method and apparatus for treating the substrate

Features, shapes, and effects of the present invention will be readily understood from the following detailed description, claims, and appended drawings.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines.

2 is a schematic view showing a semiconductor manufacturing apparatus including a substrate processing apparatus according to the present invention.

3 is a diagram schematically illustrating the substrate processing apparatus of FIG. 2.

4 is a view schematically showing the first gas supply member of FIG. 3.

5 is a view schematically illustrating the nozzle of FIG. 3.

6 and 7 are views schematically showing the support member of FIG. 3.

8 is a perspective view schematically illustrating the support member of FIG. 3.

FIG. 9 is a cross-sectional view taken along the line II ′ of FIG. 7.

10 is a flowchart showing a substrate processing method according to the first embodiment of the present invention.

11 is a flowchart showing a substrate processing method according to a second embodiment of the present invention.

12 is a flowchart showing a substrate processing method according to a third embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

1: semiconductor manufacturing equipment 10: substrate processing apparatus (process chamber)

100: body 130: door

200: support member 220: support plate

240: drive shaft 260: driver

280: controller 300: the first gas supply member

400: cover 500: plasma generating member

600: second gas supply member

The present invention relates to a method and apparatus for processing a substrate, and more particularly, to a method and apparatus for processing a substrate using plasma.

The semiconductor device has many layers on a silicon substrate, and these layers are deposited on the substrate through a deposition process. This deposition process has several important issues, which are important in evaluating the deposited films and selecting the deposition method.

The first is the 'qulity' of the deposited film. This means composition, contamination levels, defect density, and mechanical and electrical properties. The composition of the films can vary depending on the deposition conditions, which is very important for obtaining a specific composition.

The second is uniform thickness across the wafer. In particular, the thickness of the film deposited on the nonplanar pattern on which the step is formed is very important. Whether the thickness of the deposited film is uniform may be determined through step coverage defined by dividing the minimum thickness deposited on the stepped portion by the thickness deposited on the upper surface of the pattern.

Another issue with deposition is filling space. This includes gap filling between the metal lines with an insulating film including an oxide film. The gap is provided to physically and electrically insulate the metal lines.

1A and 1B are cross-sectional views of a wafer showing a gap formed between metal lines a. 1A and 1B show an incomplete gap filling process. The gap between the metal lines a is filled with the insulating film b. At this time, while the insulating film b is filled in the gap, an overhang h grows in the form of breadloafing in the upper portion of the gap, and the growth rate of the overhang h is an insulating film filled in the gap. It is faster than the growth rate of b). As a result, the overhangs h meet with each other to close the top of the gap to form voids in the gap, preventing the insulating film b from being deposited in the gap. The formed voids result in high contact resistance and high sheet resistance, and also cause breakage. In addition, the voids may contain a treatment liquid or water, causing stability problems.

The High-Density Plasma Chemical Vapor Deposition (HDPCVD) method uses a deposition / etching / deposition method that deposits a film in a gap using plasma, etches overhang grown during deposition of the film, and then deposits the film again. To prevent the formation of voids. That is, the partially filled gap is reshaped to open the gap, and a film is deposited in the gap before voids are formed in the gap. This method can deposit a film without voids in a gap having a large Aspect Ratio (AR).

However, such a conventional substrate processing apparatus did not take into account uniformity problems, so that the resulting plasma was unevenly supplied on the wafer, and the thickness of the film deposited on the wafer was not uniform.

As previously seen, uniformity is one of the important issues associated with the deposition process, and non-uniform films resulted in high electrical resistance on the metal line and increased the probability of mechanical failure.

The present invention has been made to solve the above problems, and an object of the present invention is to provide a method and apparatus for processing a substrate that can increase the process uniformity with respect to the entire surface of the wafer.

Another object of the present invention is to provide a method and apparatus for processing a substrate capable of depositing a film of uniform thickness on a wafer.

Another object of the present invention is to provide a method and apparatus for processing a substrate that can improve the performance of a semiconductor device.

Still other objects of the present invention will become more apparent from the following detailed description and the accompanying drawings.

According to an embodiment of the present invention, a method of treating a substrate by using a high-density plasma chemical vapor deposition (HDPCVD) method may be performed by supplying a source gas into a process chamber and exciting the source gas. After the plasma is generated, a film is deposited on a substrate placed on a support plate installed in the process chamber by using the generated plasma, and the substrate rotates together with the support plate while the film is deposited on the substrate. do.

According to another embodiment of the present invention, a method of processing a substrate may include setting a plurality of process variables before the process proceeds, wherein the process variables include a rotational displacement of the support plate on which the substrate is placed, and the support during the process proceeds. The plate is fixed.

The support plate may be fixed after being rotated by the rotational displacement set before the substrate is placed thereon. In addition, the support plate may be fixed after being rotated by the rotational displacement set after the substrate is placed thereon.

The process includes supplying a source gas into the process chamber, exciting the source gas to generate a plasma, and then depositing a film on the patterned surface of the substrate using the generated plasma (High-Density). Plasma Chemical Vapor Deposition (HDPCVD) process.

According to the present invention, the substrate processing apparatus is a process chamber is made of a process chamber is formed on the one side passage passage, the support chamber is installed in the process chamber, the substrate is placed, the support through the bottom wall of the process chamber A rotatable drive shaft connected to the lower part of the plate, a sealing member provided between the bottom wall of the process chamber and the drive shaft to maintain airtightness in the process chamber, and installed in the process chamber and source gas in the process chamber. It includes a gas supply member for supplying, a plasma generating member for generating energy by applying energy to the source gas, and an exhaust member connected to the process chamber to maintain the inside of the process chamber in a vacuum state.

The sealing member may be a magnetic seal.

The apparatus may further include a controller for driving the drive shaft at a predetermined angle.

Hereinafter, exemplary embodiments of the present invention will be described in more detail with reference to FIGS. 2 to 12. Embodiment of the present invention may be modified in various forms, the scope of the present invention should not be construed as limited to the embodiments described below. This embodiment is provided to explain in detail the present invention to those skilled in the art. Accordingly, the shape of each element shown in the drawings may be exaggerated to emphasize a more clear description.

Hereinafter, the wafer W will be described as an example of the substrate, but the present invention is not limited thereto. In addition, hereinafter, a semiconductor manufacturing apparatus 1 having a substrate processing apparatus (or process chamber) 10 performing a deposition process will be described as an example. However, the spirit and scope of the present invention is not limited thereto, and the present invention may be applied to an ashing process, an etching process, or a cleaning process.

2 is a diagram schematically showing a semiconductor manufacturing facility 1 including a substrate processing apparatus 10 according to the present invention.

Referring to FIG. 2, the semiconductor manufacturing facility 1 includes a process facility 2, an Equipment Front End Module (EFEM) 3, and an interface wall 4. The plant front end module 3 is mounted in front of the process plant 2 to transfer the wafer W between the vessel (not shown) in which the wafers W are housed and the process plant 2. The facility front end module 3 has a plurality of loadports 60 and a frame 50. The frame 50 is located between the load port 60 and the process equipment 2. The container containing the wafer W is placed on the load port 60 by a transfer means (not shown), such as an overhead transfer, an overhead conveyor, or an automatic guided vehicle. Is put on. The container may be a closed container such as a front open unified pod (FOUP). In the frame 50, a frame robot 70 for transferring the wafer W is installed between the vessel placed in the load port 60 and the process facility 2. In the frame 50, a door opener (not shown) for automatically opening and closing the door of the container may be installed. In addition, the frame 50 may be provided with a fan filter unit (FFU) (not shown) for supplying clean air into the frame 50 so that clean air flows from the top to the bottom in the frame 50. .

The wafer W is subjected to a predetermined process in the process facility 20. The process facility 2 has a loadlock chamber 20, a transfer chamber 30, and a process chamber 10. The transfer chamber 30 has a generally polygonal shape when viewed from the top. The load lock chamber 20 or the process chamber 10 is located at the side of the transfer chamber 30. The loadlock chamber 20 is located on the side adjacent to the facility front end module 3 of the sides of the transfer chamber 30, and the process chamber 10 is located on the other side. The load lock chamber 20 includes a loading chamber 20a in which the wafers W flowing into the process facility 2 temporarily stay in order to proceed with the process, and wafers W exiting the process facility 2 after the process is completed. ) Has an unloading chamber 20b that temporarily stays. The interior of the transfer chamber 30 and the process chamber 10 is maintained at a vacuum, and the interior of the load lock chamber 20 is converted to a vacuum and atmospheric pressure. The load lock chamber 20 prevents foreign contaminants from entering the transfer chamber 30 and the process chamber 10. A gate valve (not shown) is installed between the load lock chamber 20 and the transfer chamber 30 and between the load lock chamber 20 and the facility front end module 3. When the wafer W moves between the facility front end module 3 and the load lock chamber 20, the gate valve provided between the load lock chamber 20 and the transfer chamber 30 is closed and the load lock chamber 20 is closed. When the wafer W is moved between the transfer chamber 30 and the transfer chamber 30, the gate valve provided between the load lock chamber 20 and the facility front end module 3 is closed.

The transfer robot 40 is mounted in the transfer chamber 30. The transfer robot 40 loads the wafer W into the process chamber 10 or unloads the wafer W from the process chamber 10. In addition, the transfer robot 40 transfers the wafer W between the process chamber 10 and the load lock chamber 20.

The process chamber 10 performs a process such as deposition or etching on the wafer W. Hereinafter, the process chamber 10 will be referred to as a substrate processing apparatus 10. Detailed description of the substrate processing apparatus 10 will be described later.

3 is a front view schematically showing a substrate processing apparatus 10 according to the present invention.

As shown in FIG. 3, the substrate processing apparatus 10 for performing a process on the wafer W includes a cylindrical lower chamber of which the upper part is opened and a cover 400 covering the open upper part of the lower chamber. The lower chamber includes a cylindrical body 100 and a first gas supply member 300 connected to an upper end of the body 100.

In the present embodiment, the process performed using the substrate processing apparatus 10 is a deposition process, and hereinafter, a high density plasma chemical vapor deposition (HDPCVD) process will be described as an example. As previously seen, the high density plasma chemical vapor deposition process involves the deposition process of depositing a film in a gap formed between metal lines by forming a plasma of high density, and etching etching overhangs on the gap. etching) process. Overhangs growing at the top of the gap close the inlet of the gap to form voids in the gap. Thus, by removing overhangs through the etching process, voids are prevented from forming in the gap.

The support member 200 for supporting the wafer W is installed in the inner space of the main body 100. The support member 200 may use an electrostatic chuck (ESC) that can fix the wafer (W) using electrostatic force, and selectively absorb the wafer (W) by a mechanical chuck or a vacuum that can be clamped through a mechanical structure. A vacuum chuck can be used. On the other hand, the biasing power may be applied to the support member 200 to guide the source gas in the plasma state to the wafer (W). Details of the supporting member 200 will be described later.

Next, a sidewall of the main body 100 has a passage 122 through which the wafer W can enter and an opening 124 communicating with the passage 122 so that the wafer W enters the interior of the main body 100. Is formed. The cross sectional area of the inlet 124 is larger than the cross sectional area of the passage 122. The wafer W enters into or exits the body 100 through the inlet 124 and the passage 122.

The door 130 opening and closing one end of the passage 122 connected to the inlet 124 is installed on the inlet 124. The door 130 is connected to the driver 132 and opens and closes one end of the passage 122 while moving in a direction substantially perpendicular to the longitudinal direction of the passage 122 by the operation of the driver 132.

A plurality of exhaust holes 102 are formed in the bottom wall of the main body 100, and exhaust lines 104 are connected to the exhaust holes 102, respectively. A pump (not shown) may be installed on the exhaust line 104. The exhaust lines 104 serve as a passage for discharging the gas inside the main body 100 to the outside. The reaction gas, the unreacted gas, and the reaction by-product generated inside the main body 100 are discharged to the outside of the main body 100 through the exhaust lines 104, and the pressure inside the main body 100 is vacuumed. In order to maintain the gas, the gas inside the main body 100 may be discharged to the outside through the exhaust lines 104.

The upper end of the main body 100 is provided with a first gas supply member 300 for supplying a source gas to the inside of the main body 100 to perform a deposition or etching process. The first gas supply member 300 includes a gas distribution ring 320 and a plurality of injectors 340 fastened to the gas distribution ring 320.

4 is a diagram schematically illustrating the first gas supply member 300 of FIG. 3.

As shown in FIG. 4, the gas distribution ring 320 has a ring shape, and on the gas distribution ring 320, a first flow path 322 disposed inside and a second flow path disposed outside the first flow path 322. The flow path 324 is formed. The first source gas line 382, through which the first source gas flows, is connected to the first flow path 322, and the first source gas line 382 is opened and closed by a valve 382a. The second source gas line 384 through which the second source gas flows is connected to the second flow path 324, and the second source gas line 384 is opened and closed by the valve 384a. Accordingly, the first source gas flows through the first flow path 322, and the second source gas flows through the second flow path 324. The first source gas is a silicon-containing gas containing silane (SiH ₄ ) and the second source gas is an oxygen-containing gas containing oxygen (O ₂ ). to be.

The plurality of injectors 340 are installed at equal intervals on the gas distribution ring 320, and the injectors 340 protrude from the inside of the gas distribution ring 320 toward the center of the gas distribution ring 320. The injectors 340 include a pair of first to third injectors 342, 344 and 346, and a plurality of first to third injectors 342, 344 and 346 forming a pair are provided. The second injector 344 is disposed between the first and third injectors 342 and 346, and the first and third injectors 342 and 346 are disposed to be symmetric with respect to the second injector 344. The first and third injectors 342 and 346 are connected to the first flow path 322 through the first and third lines 362 and 366, respectively, and the second injector 344 connects the second line 364. It is connected to the second flow path 324 through. Accordingly, the first and third injectors 342 and 346 supply the first source gas flowing through the first flow path 322, and the second injector 344 supplies the second source gas flowing through the second flow path 324. Supply.

As shown in FIG. 3, the coupling member 150 has a ring shape having a size corresponding to that of the gas distribution ring 320, and is coupled to a lower end of the gas distribution ring 320 so that the first and second flow paths 322 and 324 are provided. ) Is closed from the outside, and the first and second source gases in the first and second flow paths 322 and 324 are prevented from leaking to the outside. To this end, an O-ring (not shown) may be provided between the gas distribution ring 320 and the coupling member 150.

The cover 400 is coupled to the upper portion of the first gas supply member 300 and closes the open upper portion of the main body 100. The upper portion of the cover 400 is provided with a plasma generating member 500 for making the source gas supplied into the main body 100 into a plasma state. The plasma generating member 500 has a coil 540 provided on the cover 400 to form an electromagnetic field and a fixture 520 for fixing the coil 540. The coil 540 has a high frequency power source (not shown). ) Is connected. The cover 400 is made of an insulator material, preferably aluminum oxide and ceramic material, to which high frequency energy is transmitted.

In this embodiment, the coil 540 is described as being provided above the cover 400. However, the position of the coil 540 may be variously modified. For example, it may be provided on the side of the main body 100 or the side of the gas distribution ring 320.

As shown in FIG. 3, the second gas supply member 600 is installed at the center of the cover 400. The second gas supply member 600 supplies a source gas and a cleaning gas to the inside of the main body 100. The second gas supply member 600 includes a first gas supply pipe 620 and a second gas supply pipe 640. The first gas supply pipe 620 is connected to the center of the cover 400, and supplies the cleaning gas supplied through the first supply line 622 to the inside of the main body 100. The first supply line 622 is opened and closed using the valve 622a. The second gas supply pipe 640 is installed in the first gas supply pipe 620 and supplies the source gas supplied through the second supply line 642 to the inside of the main body 100. The second supply line 642 is opened and closed using the valve 642a. The nozzle 660 is connected to the end of the second gas supply pipe 640.

FIG. 5 is a diagram schematically illustrating the nozzle 660 of FIG. 3.

As shown in FIG. 5, the nozzle 660 includes an insertion tube 662, a diffusion member 664, a guide plate 666, and an injector 668. Insertion tube 662 is a hollow cylindrical shape, the upper end of the insertion tube 662 is inserted into the second gas supply pipe 640, the lower end of the insertion tube 662 is connected to the diffusion member 664. . The diffusion member 664 extends downward from the lower end of the insertion tube 662, and gradually increases in cross-sectional area of the cross section toward the lower side. As shown in FIG. 8, the outer surface of the diffusion member 664 has an arc shape. The guide plate 666 is connected to the lower end of the diffusion member 664. The guide plate 666 has a disc shape having an area larger than the bottom area of the diffusion member 664. The injector 668 of the tip shape is connected to the center of the lower end of the guide plate 666.

On the other hand, the injection passage 663 is formed in the center of the insertion tube 662 and the diffusion member 664. The injection passage 663 is generally provided in parallel with the second gas supply pipe 640, and a source gas flows inside the injection passage 663. A through hole 665 is formed at the center of the guide plate 666 to communicate with the injection passage 663, and the through hole 665 communicates with the first and second injection holes 667a and 667b formed in the injector 668. do. Therefore, the source gas introduced through the injection passage 663 is supplied to the upper portion of the support member 200 through the through hole 665 and the first and second injection holes 667a and 667b. The source gas is a silicon-containing gas containing silane (SiH ₄ ).

In addition, the cleaning gas flowing inside the first gas supply pipe 620 flows along the surfaces of the diffusion member 664 and the guide plate 666 of the nozzle 660 and diffuses to the upper portion of the support member 200. The cleaning gas includes nitrogen trifluoride (NF ₃ ) and argon (Ar). The cleaning gas is provided to clean the inside of the main body 100 after the process is completed.

In this embodiment, the source gas is supplied to the edge region inside the main body 100 using the injector 340, and the source gas is supplied to the central area inside the main body 100 using the nozzle 660. This is to uniformly supply the source gas to the upper portion of the wafer W so that the process is uniformly performed on the entire surface of the wafer W. Alternatively, the source gas may be supplied using any one of the injector 340 and the nozzle 660.

6 and 7 are views schematically showing the support member 200 of FIG. 3. 8 is a perspective view schematically illustrating the support member of FIG. 3, and FIG. 9 is a cross-sectional view taken along the line II ′ of FIG. 7.

As shown in FIGS. 6 and 7, the support member 200 includes a support plate 220, a drive shaft 240, a driver 260, and a controller 280.

The wafer W is placed side by side with the support plate 220 on the support plate 220. The support plate 220 is made of aluminum, so that the pattern formed on the wafer W may react with the support plate 220. Therefore, the protective layer 221 of a ceramic material may be formed on the upper surface of the support plate 220, and the ceramic material includes aluminum oxide (Al ₂ O ₃ ).

One end of the drive shaft 240 is connected to the lower portion of the support plate 220, and the other end of the drive shaft 240 is connected to the driver 260. The driver 260 is a rotating device including a motor, and generates a rotating force by a current applied from the outside. The generated rotation force is transmitted to the drive shaft 240, the drive shaft 240 rotates together with the support plate 220.

A sealing member 241 is provided between the drive shaft 240 and the bottom wall of the main body 100. The sealing member 241 maintains the airtight inside the body 100 and at the same time helps the rotation of the drive shaft 240. The sealing member 241 includes a magnetic seal.

The driver 260 is connected to the controller 280, which controls the operation of the driver 260. The controller 280 may control all operations of the driver 260 including the rotation speed, the rotation amount, and the rotation direction of the driver 260.

As illustrated in FIG. 7, a first cooling line through which a cooling gas flows and a second cooling line through which a cooling fluid flows are formed in the support plate 220.

The first cooling line supplies a cooling gas to the rear surface of the wafer W placed on the support plate 220, and the wafer W is cooled to a predetermined temperature by the cooling gas. High temperature heat is generated during the process, and particularly high temperature heat is generated in the etching process by sputtering during the high density plasma chemical vapor deposition process. As a result, the temperature of the wafer W may increase, and the first cooling line cools the wafer W using a cooling gas.

The first cooling line includes a cooling gas flow path 222, a distribution line 224, and a plurality of branch lines 226. As shown in FIG. 7, the cooling gas flow path 222 is formed at the center of the support plate 220, and the lower end of the cooling gas flow path 222 is formed of the cooling gas flow path 242 formed at the center of the driving shaft 240. Connected to the top. The distribution line 224 extends in the radial direction of the support plate 220 from the cooling gas flow path 222. The branch lines 226 branch from the distribution line 224 and extend toward the upper portion of the support plate 220, and are connected to the plurality of ejection openings 228 formed on the protective layer 221, respectively.

A lower end of the cooling gas flow path 242 formed at the center of the drive shaft 240 is connected to the cooling gas line 244, and the cooling gas supplied to the rear surface of the wafer W flows in the cooling gas line 244. The cooling gas contains an inert gas, and the inert gas contains helium (He).

The cooling gas supplied to the cooling gas passage 242 through the cooling gas line 244 is supplied to each branch line 226 through the cooling gas passage 222 and the distribution line 224, and the supplied cooling gas is It is supplied to the back surface of the wafer W through the jet holes 228.

As shown in FIG. 8, the plurality of support protrusions 229 are provided on the protective layer 221. The plurality of support protrusions 229 are disposed at equal intervals in four directions with respect to the center and the center of the support plate 220, and support the rear surface of the wafer W placed on the support plate 220.

Therefore, the wafer W is supported by the plurality of support protrusions 229 to be kept at a distance from the upper surface of the protective layer 221, and the wafer W is supported by the cooling gas supplied to the rear surface. Controlled to a constant temperature.

The second cooling line 232 is located below the distribution line 224, and as shown in FIG. 9, the second cooling line 232 is spirally arranged to surround the cooling gas flow path 222. The second cooling line 232 cools the temperature of the support plate 220 to a predetermined temperature. As mentioned above, the temperature of the support plate 220 may increase due to the high temperature heat generated in the deposition process, particularly the high density plasma chemical vapor deposition process. Therefore, the support plate 220 is cooled using the second cooling line 232.

As shown in FIG. 7, one end of the second cooling line 232 is connected to the cooling fluid supply line 234, and the other end of the second cooling line 232 is connected to the cooling fluid recovery line 236. The cooling fluid supply line 234 is opened and closed by a valve 234a installed on the cooling fluid supply line 234. Cooling fluid flows in the cooling fluid supply line 234, and supplies cooling fluid to the second cooling line 232. The cooling fluid supplied through the cooling fluid supply line 234 moves along the second cooling line 232 to the end where the cooling fluid recovery line 236 is connected to cool the support plate 220 to a predetermined temperature. Thereafter, the cooling fluid is recovered through the cooling fluid recovery line 236, and the recovered cooling fluid is cooled to a predetermined temperature through a chiller (not shown) and then supplied to the cooling fluid supply line 234 again. Can be.

10 to 12 are flowcharts illustrating a substrate processing method according to the present invention. Hereinafter, the substrate treating method according to the present invention will be described in detail with reference to FIGS. 10 to 12.

10 is a flowchart showing a substrate processing method according to the first embodiment of the present invention.

First, the wafer W is placed on the support member 200 in the main body 100. When the door 130 is opened by the driver 132, the wafer W is introduced into the main body 100 through the passage 122 and is placed on the support protrusion 229 on the support member 200. . As described above, the wafer W may be fixed on the support plate 220 by an electrostatic force.

Next, the source gas is supplied to the upper portion of the wafer W by using the first gas supply member 300 and the second gas supply member 600 (S10). The first and third injectors 342 and 346 of the first gas supply member 300 supply a silicon-containing gas including silane, and the second injector 344 supplies an oxygen-containing gas including oxygen. do. In addition, the nozzle 660 of the second gas supply member 600 supplies a silicon-containing gas including silane.

Next, an electromagnetic field is formed on the wafer W (S20). When the high frequency power source connected to the coil 540 is operated, high frequency energy is generated in the coil 540, and the generated energy is transferred to the upper portion of the wafer W through the cover 400 to generate an electromagnetic field on the upper portion of the wafer W. To form. At this time, the formed electromagnetic field generates a plasma from the silicon-containing gas and the oxygen-containing gas supplied to the upper portion of the wafer (W30).

Next, the wafer W placed on the support plate 220 is rotated (S40). When the driver 260 is operated, the driver 260 rotates the drive shaft 240, and the support plate 220 rotates together with the drive shaft 240. Therefore, the wafer W also rotates together with the support plate 220. The generated plasma is supplied onto the rotating wafer W, and a film is deposited in the gap of the wafer W (S50).

Thereafter, as described above, etching is performed to remove the overhang grown on the gap, and when the etching is completed, the deposition process is repeated in the same manner. Through this method, the gap of the wafer W is filled.

According to the above method, since the generated plasma is supplied onto the rotating wafer W, the plasma can be uniformly supplied to the entire surface of the wafer W. FIG. That is, according to the method mentioned above, the problem that a plasma is unevenly supplied according to the position on the wafer W can be solved. On the other hand, in the present embodiment has been described as the support plate 220 is continuously rotated, in contrast, the support plate 220 may repeat the rotation and stop with a certain period, it can repeat the forward and reverse rotation have.

11 is a flowchart showing a substrate processing method according to a second embodiment of the present invention, and FIG. 12 is a flowchart showing a substrate processing method according to a third embodiment of the present invention.

The substrate processing method according to the second and third embodiments of the present invention is characterized in that the process parameters are set in advance before the process for the wafer W is performed. Process variables refer to variables that can be adjusted by the user to obtain the intended process results, and include process conditions such as process temperature, process pressure, and process time.

The treatment method according to the second and third embodiments of the present invention includes the rotational displacement of the support plate in the process variable, and sets the rotational displacement of the support plate before the process is performed. In this respect, the wafer W is distinguished from the first embodiment in which the wafer W is continuously rotated together with the support plate 220 during the process. The reason for including the rotational displacement of the support plate in the process variable is the same as the reason for continuously rotating the wafer W during the process, and for depositing a film of uniform thickness on the entire surface of the wafer W.

According to the second embodiment of the present invention, before placing the wafer W on the support member 200, the support plate 220 is rotated by the set rotational displacement (S110). This is to prevent the deposition of a film of non-uniform thickness on the entire surface of the wafer W due to the characteristics of the support plate 220.

For example, as described above, the first cooling line and the second cooling line 232 are installed in the support member 220, and the first cooling line and the second cooling line 232 are each a wafer (W). And the support plate 220 is cooled. The thickness of the film deposited on the front surface of the wafer W may be affected by temperature, and the temperature of the wafer W may be uneven depending on the arrangement of the first cooling line and the second cooling line 232. The thickness of the film deposited on the front side of W) may be nonuniform. In addition, there may be various non-uniform elements in the support member 220, and thus, a film having a non-uniform thickness may be deposited on the entire surface of the wafer (W).

Therefore, after repeatedly performing the process by changing the rotation position (rotational displacement) of the support plate 220 with respect to the plurality of wafers W having the same pattern, the film deposited on the front surface of the wafer W is formed. Compare each degree of uniformity. According to the comparison result, the optimum position, which is the rotational position (rotational displacement) of the support plate 220 on which the film having the most uniform thickness is deposited on the entire surface of the wafer W, is stored in the database, and the support plate 220 before the process is processed. The support plate 220 is disposed at the optimum position by rotating by the rotation position (rotational displacement).

According to the above-described method, it is possible to determine the optimum position of the support plate 220 according to the repetitive experiment, the process can be performed in a state in which the support plate 220 is rotated to the optimum position before the process proceeds, the support plate ( Due to the nonuniformity of 220, it is possible to prevent the deposition of a film of non-uniform thickness on the entire surface of the wafer (W).

Thereafter, the wafer W is placed on the support plate 220 in a state in which the support plate 220 is fixed (S120). The subsequent steps are the same as those described with reference to FIG. 10, except that the wafer W does not rotate unlike the description with reference to FIG. 10.

According to the third embodiment of the present invention, after placing the wafer W on the support member 200 (S210), the support plate 220 is rotated by a predetermined rotational displacement (S220). This is to prevent a film of non-uniform thickness from being deposited on the entire surface of the wafer W due to the characteristics of the wafer W.

The user forms patterns of various shapes on the wafer (W). Such patterns are arranged such that the completed semiconductor device has electrical characteristics consistent with the intention of the user. Such patterns are arranged asymmetrically or nonuniformly with respect to the front surface of the wafer W, and a film having a non-uniform thickness may be deposited on the front surface of the wafer W due to the shape of the patterns.

Therefore, after repeatedly performing the process by changing the rotational position (rotational displacement) of the wafers W with respect to the plurality of wafers W having the same pattern, the film deposited on the front surface of the wafers W Compare each degree of uniformity. According to the comparison result, the optimum position, which is the rotational position (rotational displacement) of the wafer W on which the film having the most uniform thickness is deposited on the entire surface of the wafer W, is stored in the database, and the wafer W is supported on the support plate before the process proceeds. The support plate 220 is rotated by the rotational position (rotational displacement) in the state of being placed on the 220 to arrange the wafer W at the optimum position.

According to the above method, it is possible to determine the optimum position of the wafer (W) according to the repetitive experiment, and to perform the process while rotating the support plate 220 to rotate the wafer (W) to the optimum position before the process proceeds. Therefore, it is possible to prevent the deposition of a film of non-uniform thickness on the entire surface of the wafer W due to the nonuniform elements of the wafer W.

Subsequently, a method of depositing a film in the gap using the plasma generated by supplying the source gas is the same as that described with reference to FIGS. 10 and 11, except that the wafer W does not rotate unlike the description of FIG. 10.

Although the present invention has been described in detail with reference to preferred embodiments, other forms of embodiments are possible. Therefore, the spirit and scope of the claims set forth below are not limited to the preferred embodiments.

According to the present invention, the process uniformity can be increased with respect to the entire surface of the substrate.

According to the present invention, a film of uniform thickness can be deposited on the wafer.

According to the present invention, a semiconductor device having improved performance can be provided.

Claims (8)

In the method of treating the substrate using a high-density plasma chemical vapor deposition (HDPCVD) method, After supplying the source gas into the process chamber, excitation of the source gas to generate a plasma, Using the generated plasma to deposit a film on a substrate placed on a support plate installed in the process chamber, And the substrate rotates with the support plate while the film is deposited on the substrate. Set multiple process variables before proceeding, The process parameters include the rotational displacement of the support plate on which the substrate is placed, And the support plate is fixed during the process. The method of claim 2, And the support plate is fixed after being rotated by the rotational displacement set before the substrate is placed thereon. The method of claim 2, And the support plate is fixed after being rotated by the rotational displacement set after the substrate is placed thereon. The method according to any one of claims 2 to 4, The process includes supplying a source gas into the process chamber, exciting the source gas to generate a plasma, and then depositing a film on the patterned surface of the substrate using the generated plasma (High-Density). Plasma Chemical Vapor Deposition (HDPCVD) process. The process is made, the process chamber formed with a passage for entering and exiting the substrate on one side; A support plate installed in the process chamber and on which the substrate is placed; A drive shaft connected to a lower portion of the support plate through a bottom wall of the process chamber; A sealing member provided between the bottom wall of the process chamber and the driving shaft and maintaining an airtight inside the process chamber; A gas supply member installed in the process chamber and supplying a source gas into the process chamber; A plasma generator for generating plasma by applying energy to the source gas; And And an exhaust member connected to the process chamber to maintain the inside of the process chamber in a vacuum state. The method of claim 6, The sealing member is a substrate processing apparatus, characterized in that the magnetic seal (magnetic seal). The method of claim 6, The apparatus further comprises a controller for driving the drive shaft at a predetermined angle.

Images