KR20080059775A - Organic light emitting diodes display device and method of manufacturing the same - Google Patents

Abstract

An organic light emitting diode display device and a method for manufacturing the same are provided to reduce permeation of moisture and oxygen into a display region by using a margin region as a sealing region through a sealant inflow preventing member. An organic light emitting diode display device includes a first substrate, thin film transistors, a sealant(180), a second substrate, and a sealant inflow preventing member(200). The first substrate has a display region(D) with a plurality of pixels to display an image, a sealing region(S) around the display region, and a boundary region between the display region and the sealing region. The thin film transistors are formed at the pixels respectively. The sealant is arranged along the sealing region. The second substrate is bonded to the first substrate by the sealant and has an organic light emitting diode electrically connected to the thin film transistor to emit light. The sealant inflow preventing member is interposed between the first and second substrates to prevent inflow of the sealant into the display region.

Description

Organic light emitting diode display and manufacturing method thereof {ORGANIC LIGHT EMITTING DIODES DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME}

1 is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

3 is a cross-sectional view of an organic light emitting diode display according to a second exemplary embodiment of the present invention.

4 is a cross-sectional view of an organic light emitting diode display according to a third exemplary embodiment of the present invention.

5 is a plan view of an organic light emitting diode display according to a fourth exemplary embodiment of the present invention.

FIG. 6 is a cross-sectional view taken along the line II-II 'of FIG. 5.

7A to 7G are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a fifth exemplary embodiment of the present invention.

8A to 8D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a sixth embodiment of the present invention.

9A to 9C are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a seventh embodiment of the present invention.

10A and 10B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an eighth embodiment of the present invention.

 (Explanation of symbols for the main parts of the drawing)

 100: first substrate 102: thin film transistor

 103: common voltage pad portion 110: protective film

 120: second substrate 130: first electrode

 132: pixel definition pattern 134: insulation pattern

 140: organic light emitting layer 142: partition wall

 144: projection member 146: additional projection member

 200, 210, 220: Sealant inflow preventing member

 230: additional sealant inflow preventing member

The present invention relates to an organic light emitting diode display device, and more particularly, to a dual panel type organic light emitting diode display device having a sealant inflow preventing member and a method of manufacturing the same.

The organic light emitting diode display is self-luminous and does not require a backlight such as a liquid crystal display, so it is not only lightweight and thin, but also can be manufactured through a simple process, thereby increasing price competitiveness. In addition, organic light emitting diode display devices are rapidly rising as next generation displays due to low voltage driving, high luminous efficiency, and wide viewing angle.

The organic light emitting diode display includes an organic light emitting diode for generating light and a thin film transistor for controlling the driving of the organic light emitting diode. Here, the thin film transistors individually drive the organic light emitting diodes, so that the organic light emitting diodes may exhibit the same luminance even when a low current is applied to the organic light emitting diodes. As a result, the organic light emitting diode display device includes a thin film transistor, which is advantageous for low power consumption, high definition, and large size, and can improve the life of the device.

As the organic light emitting diode display device forms a thin film transistor and an organic light emitting diode on one substrate, the manufacturing process time of the organic light emitting diode display device is increased and the process yield is lowered.

Accordingly, a technology for a dual panel type organic light emitting diode display device in which thin film transistors and organic light emitting diodes are formed on different first and second substrates, respectively, has emerged.

In order to manufacture a dual panel type organic light emitting diode display, first, a thin film transistor and an organic light emitting diode were respectively formed on a first substrate and a second substrate. Thereafter, a sealant was formed on the outer side of the first substrate or the second substrate, and the first and second substrates were bonded to each other by the sealant. In this case, the thin film transistor and the organic light emitting diode are in electrical contact with each other.

The width of the sealant may be formed as wide as possible to reduce the amount of moisture or oxygen introduced into the display device. However, the sealant is designed to have a predetermined margin in a region where the sealant is formed in anticipation of spreading the sealant into the display device, thereby increasing the width of the sealant.

When the sealant is formed to have a wider width than the margin, the sealant is spread into the display device in the process of bonding the first and second substrates to contaminate the thin film transistor and the organic light emitting diode. The electrical connection between the thin film transistor and the organic light emitting diode may be disturbed. In addition, the common voltage pad part of the display device may be contaminated, thereby preventing electrical contact between the common voltage pad part and the organic light emitting diode, thereby preventing driving of the organic light emitting diode.

Therefore, the sealant flows into the display area and causes a failure of the organic light emitting diode display device or a decrease in the lifespan.

One object of the present invention is to provide a dual panel type organic light emitting diode display device which can prevent the sealant from being introduced into the display device and increase the width of the sealant.

Another object of the present invention is to provide a method of manufacturing the organic light emitting diode display.

In order to achieve the above technical problem, an aspect of the present invention provides an organic light emitting diode display. The organic light emitting diode display device includes a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area. A thin film transistor provided in each pixel, a sealant disposed along the sealing region, an organic light emitting diode which is bonded to the first substrate by the sealant and electrically connected to the thin film transistor to generate light; And a sealant inflow preventing member interposed between the first and second substrates to prevent the sealant from flowing into the substrate and the display area.

In order to achieve the above technical problem, another aspect of the present invention provides a method of manufacturing an organic light emitting diode display. The manufacturing method provides a second substrate having a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area. Forming an organic light emitting diode in each pixel in the display area and forming a sealant inflow preventing member in the boundary area, forming a sealant along the sealing area, and using the sealant to form the second substrate and the sealant. Bonding the first substrate on which the thin film transistor is electrically connected to the organic light emitting diode device.

In order to achieve the above technical problem, another aspect of the present invention provides a method of manufacturing an organic light emitting diode display. The manufacturing method provides a first substrate having a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area. Forming a thin film transistor in each pixel of the display area, forming a sealant inflow preventing member on a first substrate of the boundary area, and forming a sealant in the sealing area; And bonding the first substrate and the second substrate on which the organic light emitting diode is formed by the sealant.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings of the organic light emitting diode display. The following embodiments are provided as examples to sufficiently convey the spirit of the present invention to those skilled in the art. Accordingly, the invention is not limited to the embodiments described below and may be embodied in other forms. In the drawings, the size and thickness of the device may be exaggerated for convenience. Like numbers refer to like elements throughout.

Example  One

1 and 2 illustrate an organic light emitting diode display according to a first embodiment of the present invention.

1 is a plan view of an organic light emitting diode display according to a first exemplary embodiment of the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of FIG. 1.

1 and 2, an organic light emitting diode display device includes a display area D, a sealing area S disposed around the display area D, and a display area D between the display area D and the sealing area S. FIG. It has a boundary area of.

The display area D includes a plurality of pixels. Each of the pixels emits light, and the lights display an image.

The sealing region S is provided with a sealant 180 for bonding the first and second substrates 100 and 120 having the organic light emitting diode and the thin film transistor to be described later.

A sealant inflow preventing member 200 is disposed at a boundary between the display area D and the sealing area S to prevent the sealant from invading the display area D. As a result, the sealant 180 may be prevented from invading the display area D, thereby preventing contamination of the organic light emitting diode E and the thin film transistor 102.

The organic light emitting diode display, as viewed in cross section, includes first and second substrates 100 and 120 spaced apart from each other, as shown in FIG. 2.

A plurality of pixels P is provided in the display area D of the first substrate 100. Although not shown in the drawings, each pixel P is defined by a plurality of gate wires and data wires crossing each other on the first substrate 100. That is, the gate lines and the data lines cross each other to form a plurality of cells, and the pixel P refers to one of the plurality of cells.

Each pixel P includes a thin film transistor 102 connected to the gate line and the data line. As a result, the thin film transistor 102 receives the gate signal from the gate line and turns the thin film transistor 102 on. In this case, the thin film transistor 102 drives the organic light emitting diode E, which will be described later, according to the data signal provided from the data line.

In the edge portion of the display area D, a common voltage pad part 103 for applying a common voltage to the organic light emitting diode E is disposed. In this case, the common voltage pad part 103 is electrically connected to the first electrode 130 of the organic light emitting diode (E).

The passivation layer 110 is disposed on the first substrate 100 including the thin film transistor 102 and the common voltage pad part 103. In this case, the passivation layer 110 includes a contact hole exposing the output terminal of the thin film transistor 102 and the common voltage pad part 103.

The sealant inflow preventing member 200 is disposed on the passivation layer 110 corresponding to the boundary between the display area D and the sealing area S. FIG. Here, the sealant inflow preventing member 200 has a fence shape surrounding the outside of the display area D as shown in FIG. 1. Here, the sealant inflow preventing member 200 prevents the sealant 180 from invading the display area D.

Here, the cross section of the sealant inflow preventing member 200 may have an inverted trapezoidal shape. The cross-section of the sealant inflow preventing member 200 may have a tetragonal shape, but is not limited thereto.

The sealant inflow preventing member 200 may be made of organic materials, inorganic materials, mixtures thereof, and the like. For example, the organic material may be an acrylic resin, a urethane resin, benzocyclobutene (BCB), polyimide (PI), or the like. In addition, the inorganic material may be silicon oxide, silicon nitride, or the like.

The wider the sealant inflow preventing member 200 is, the better the width of the sealant in order to prevent collapse of the sealant. However, when the width is increased, the area of the display area D is reduced. As a result, the sealant inflow preventing member 200 may have a thickness of 5 to 20 μm that can sufficiently prevent the flow of the sealant 180.

Thus, the sealant inflow preventing member 200 may prevent the thin film transistor 102 and the organic light emitting diode E to be described later from being contaminated. In addition, the common voltage pad 103 may be contaminated by the sealant 180 to increase contact resistance with the organic light emitting diode E, which will be described later, or to prevent non-contact with the organic light emitting diode E, which is more serious.

In addition, as the sealant inflow preventing member 200 fixes the sealant 180 to the sealing area S, the present invention is concerned that the sealant 180 invades the display area D as in the related art. It is not necessary to have a margin area. Thus, the conventional margin area can be extended or removed to the sealing area (S). In this case, when the sealing area S is expanded, the width of the sealant 180 may be increased, thereby reducing the rate of introduction of moisture and oxygen into the display area D. FIG. As a result, the lifetime of the completed organic light emitting diode display can be improved. On the other hand, when removed, a more compact organic light emitting diode display can be manufactured.

In addition, although not shown, at least one sealant inflow preventing member may be further disposed along an edge portion of the display area D. FIG. In this case, the sealant inflow preventing member disposed in the display area D may be formed in plural within the margin of the display area D. Thus, as the sealant inflow preventing member 200 is also provided in the display area D, the sealant is more effectively prevented from contaminating an element, for example, an organic light emitting diode and a thin film transistor, provided in the display area. can do.

On the other hand, the organic light emitting diode E having the first electrode 130, the organic light emitting layer 140, and the second electrode 150 sequentially formed on the second substrate 120 is disposed.

In detail, the first electrode 130 is disposed on the second substrate 120 in the display area D. That is, the first electrode 130 is integrally provided in all the pixels P and is commonly used for all the pixels P.

A buffer layer 132 is disposed on the first electrode 130 to expose a light emitting region in which light is generated. Here, the buffer layer 132 has a frame shape covering the edge of the pixel P. Here, the buffer layer 132 prevents a short defect between the first electrode 130 and the second electrode 150, and prevents image quality from being degraded by mixing light implemented in different pixels. In addition, the buffer layer 132 serves to fix the partition wall 142 and the protrusion member 144 to be described later on the first electrode 210. This is because the barrier rib 142 and the protrusion member 144 are mainly made of an organic material, and thus have poor adhesion with the first electrode 130. Thus, the buffer layer 132 should be made of an insulating material having excellent adhesion to the first electrode 130, the partition 142, and the protrusion member 144, respectively. For example, the buffer layer 132 may be made of silicon oxide, silicon nitride, or the like.

The partition wall 142 and the protrusion member 144 are disposed on the buffer layer 132. Here, the partition wall 142 is disposed along the periphery of each pixel P. Substantially, each pixel P is defined by a partition 142. The partition wall 142 naturally serves to pattern the second electrode 150, which will be described later, for each pixel P without a shadow mask. As a result, the cross section of the partition wall 142 has a trapezoidal shape.

The protrusion member 144 is disposed inside the partition wall 142, that is, the pixel P. In this case, the protrusion member 144 may be a means for electrically connecting the thin film transistor 144 spaced apart from each other and the second electrode 150 to be described later. At this time, since a part of the second electrode 150 is covered on the surface of the protruding member 144, the cross section of the protruding member 144 has a regular trapezoidal shape.

The organic light emitting layer 140 is disposed on at least the first electrode 130 of the light emitting area. The organic light emitting layer 140 is separated by the first electrode 130 and the pixel P. FIG. The organic light emitting layer 140 generates light as electrons and holes provided from the first electrode 130 and the second electrode 150 are recombined, respectively.

The second electrode 150 is disposed on the organic light emitting layer 140. The second electrode 150 is separated for each pixel P by the partition wall 142. In this case, a part of the second electrode 150 covers the protrusion member 144 to form a connection portion 150a electrically connected to the thin film transistor 102. That is, the connection part 150a protrudes toward the first substrate 100 compared to the second electrode 150 provided in the light emitting area.

In addition, a contact member C is disposed at an edge portion of the pixel P to electrically connect the first electrode 150 and the common voltage pad 103 to each other.

The contact member C includes an insulation pattern 134, an additional protrusion member 146, and a conductive member 152. In detail, the insulating pattern 134 is disposed on the first electrode 150 of the edge portion of the pixel P, thereby improving adhesion between the first electrode 150 and the additional protrusion member 146. The additional protrusion member 146 is disposed on the insulating pattern 134. The additional protrusion member 146 is a means for electrically connecting the common voltage pad part 103 of the first substrate 100 to the first electrode 130. That is, the conductive member 152 covering the additional protrusion member 146 and connected to the first electrode 130 is disposed. As a result, the conductive member 152 is electrically connected to the first electrode 130 and protrudes toward the first substrate 100.

Therefore, when the first and second substrates 100 and 110 are bonded to each other, the connection part 150a comes into contact with the thin film transistor 102. As a result, the organic light emitting diode E and the thin film transistor 102 are electrically connected to each other. In addition, the contact member C and the common voltage pad part 103 are in contact with each other, such that the first electrode 130 and the common voltage pad part 103 are electrically connected to each other.

Therefore, the organic light emitting diode display according to the embodiment of the present invention may include a sealant inflow preventing member, thereby preventing the sealant from invading into the display area. As a result, the failure rate of the organic light emitting diode display device due to the sealant can be reduced. In addition, as the sealant inflow preventing member is provided, a margin region for forming a conventional sealant may be removed or the margin region may be extended to a sealing region. As a result, the organic light emitting diode display may be compactly formed, or the width of the sealant may be formed wide, thereby improving the reliability of the organic light emitting diode display.

Example  2

3 is a cross-sectional view of an organic light emitting diode display according to a second exemplary embodiment of the present invention. The second embodiment of the present invention has the same configuration as the organic light emitting diode display of the first embodiment described above except for the sealant inflow preventing member. Therefore, duplicate descriptions of the same components will be omitted, and the same names and reference numerals will be given to the same components. Also, the plane of FIG. 3 will be referred to FIG. 1.

1 and 3, an organic light emitting diode display device includes a display area D, a sealing area S disposed around the display area D, and a display area D between the display area D and the sealing area S. FIG. It has a boundary area arranged. In this case, the organic light emitting diode display device is bonded to the first and second substrates 100 and 120 spaced apart from each other by sealants provided in the encapsulation area S. FIG.

The thin film transistor 102 and the common voltage pad part 103 are provided in the display area D of the first substrate 100.

The organic light emitting diode E is provided in the display area D of the second substrate 100.

The first and second substrates 100 and 120 are bonded to each other by the sealant 180 provided in the sealing area S. FIG. In this case, the thin film transistor 102 and the second electrode 150 of the organic light emitting diode E are electrically connected to each other, and the common voltage pad 103 and the organic light emitting diode E are electrically connected to each other.

In this case, the sealant inflow preventing member 210 is disposed on the second substrate 120 corresponding to the boundary between the display area D and the sealing area S. FIG. The sealant inflow preventing member 210 serves to prevent the sealant 180 from invading into the display area D. In this case, the sealant inlet preventing member 210 may have the same shape as the protrusion member 144 for electrically connecting the organic light emitting diode E and the thin film transistor 102 to each other. This is because the protrusion member 144 is formed at the same time without undergoing a separate process for forming the sealant inflow preventing member 210. As a result, the sealant inflow preventing member 210 may have the same cross-sectional shape as the protrusion member 144. The sealant inflow preventing member 210 is made of the same material as the protrusion member 144.

In addition, as the protrusion member 144 is formed to be substantially equal to the cell gap between the first and second substrates 100 and 120, the sealant inflow preventing member 210 is formed to be substantially the same as the cell gap.

In addition, an additional insulating pattern 136 may be disposed under the sealant inflow preventing member 210. As a result, the additional insulating pattern 136 serves to complement the adhesion between the sealant inflow preventing member 210 and the second substrate 120. In addition, the additional insulation pattern 136 increases the height of the sealant inflow preventing member 210. That is, the separation interval between the first substrate 100 and the sealant inflow preventing member 210 may be reduced to more effectively prevent the inflow of the sealant.

Accordingly, the organic light emitting diode display according to the second exemplary embodiment of the present invention forms the sealant inflow preventing member 210 to prevent the sealant from invading the display area in the same manner as the protrusion member 144. Can be saved. In addition, since the protrusion member 144 is formed to be substantially the same as the cell gap of the first and second substrates 100 and 120, the sealant inflow preventing member 210 may also be formed in the first and second substrates 100 and 120. It is formed almost identically to the cell gap. That is, the sealant inflow preventing member 210 may more effectively prevent the intrusion into the display area.

Example  3

4 is a cross-sectional view of an organic light emitting diode display according to a third exemplary embodiment of the present invention. The third embodiment of the present invention has the same configuration as the organic light emitting diode display of the second embodiment described above except for the sealant inflow preventing member. Therefore, duplicate descriptions of the same components will be omitted, and the same names and reference numerals will be given to the same components. Also, the plane of FIG. 4 will be referred to FIG. 1.

1 and 4, an organic light emitting diode display device includes a display area D, a sealing area S disposed around the display area D, and a display area D between the display area D and the sealing area S. Referring to FIGS. It has a boundary area arranged. The organic light emitting diode display includes first and second substrates 100 and 120 spaced apart from each other. In this case, the first and second substrates 100 and 120 are bonded to each other by the sealant 180 disposed in the sealing region S so that the display region is sealed from the outside.

The sealant inflow preventing member 220 may be formed on the second substrate 120 at the boundary between the display area D and the sealing area S. FIG. In this case, the sealant inflow preventing member 220 may be disposed on the second substrate 120 to be formed at the same time when the partition wall 142 is formed. That is, the cross section of the sealant inflow preventing member 220 has the same shape as the partition wall 142 and may be made of the same material. That is, the cross section of the sealant inflow preventing member 220 may have an inverted trapezoidal shape. At this time, the width of the sealant inflow preventing member 220 may have a 5 to 20㎛.

Therefore, in the embodiment of the present invention, by forming the sealant inflow preventing member 220 when the partition wall 142 is formed, the process can be simplified. In addition, the sealant inflow preventing member 220 may have an inverted trapezoidal cross section, thereby more effectively preventing the sealant from invading into the display area D. FIG.

Example  4

5 is a plan view of an organic light emitting diode display according to a fourth exemplary embodiment of the present invention, and FIG. 6 is a cross-sectional view taken along the line II-II ′ of FIG. 5. The fourth embodiment of the present invention has the same configuration as the organic light emitting diode display of the third embodiment described above except for the additional sealant inflow preventing member. Therefore, duplicate descriptions of the same components will be omitted, and the same names and reference numerals will be given to the same components.

5 and 6, an organic light emitting diode display device includes a display area D, a sealing area S disposed around the display area D, and a display area D between the display area D and the sealing area S. Referring to FIGS. It has a boundary area arranged. The organic light emitting diode display includes first and second substrates 100 and 120 spaced apart from each other. In this case, the first and second substrates 100 and 120 are bonded to each other by the sealant 180 disposed in the sealing region S so that the display region is sealed from the outside.

The sealant inflow preventing member 220 provided at the boundary between the display area D and the sealing area S is provided.

The sealant further includes an additional sealant inflow preventing member 230 disposed along the periphery of the sealing region S. That is, the sealant 180 is formed between the sealant inflow preventing member 220 and the additional sealant inflow preventing member 230. As a result, since the sealant 180 has a uniform width, the first and second substrates 100 and 120 may be uniformly bonded. In addition, as the sealant 180 is prevented from spreading to the outside of the display device, contamination of the outer surfaces of the first and second substrates 100 and 120 may be prevented.

In the embodiment of the present invention, by further providing an additional sealant inflow preventing member 230 facing the sealant inflow preventing member 220, the width of the sealant may be uniformly formed, and the sealant leaks to the outside to form a sealant. Contamination of the outer surfaces of the first and second substrates 100 and 120 could be prevented.

In the above-described embodiments of the present invention, the sealant inflow preventing member is formed on the first substrate 100 or the second substrate 200, but is not limited thereto. That is, the sealant inflow preventing member may be formed on the first substrate 100 and the second substrate 200 to face each other or to cross each other.

Example  5

7A to 7F are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display device according to a fifth embodiment of the present invention. Here, the fifth embodiment is a manufacturing method for manufacturing the organic light emitting diode display according to the first embodiment of the present invention.

Referring to FIG. 7A, a first substrate 100 is provided to manufacture an organic light emitting diode display. The first substrate 100 may be a plastic substrate or a glass substrate.

The first substrate 100 has a display area D, a sealing area S, and a boundary area between the display area D and the sealing area S. In the display area D, a plurality of pixels P are defined.

The thin film transistor 102 is formed for each pixel P on the first substrate 100. In addition, a common voltage pad 103 is formed at the edge of the display area D. FIG.

After forming the thin film transistor 102 and the common voltage pad part 103, the protective film 110 is formed on the first substrate 100 to cover the thin film transistor 102.

The passivation layer 110 may be formed of silicon oxide or silicon nitride. In this case, the protective film 110 may be formed through chemical vapor deposition or sputtering. In this case, the protective layer 110 has a contact hole exposing the output terminal of the thin film transistor 102 and the common voltage pad unit 103. An example of the output terminal may be a drain electrode of the thin film transistor 102. The contact hole may be formed by forming a photoresist pattern in which the contact hole formation region is opened in the passivation layer 110 and then etching the passivation layer 110 using the photoresist pattern as an etching mask.

Referring to FIG. 7B, after forming the passivation layer 110, the sealant inflow preventing member 200 is formed on the passivation layer 110 between the display area D and the sealing area S. Referring to FIG.

In order to form the sealant inflow preventing member 200, an organic layer is formed on the passivation layer 110. A photoresist pattern having a portion open on the organic layer is formed. Thereafter, the organic layer may be etched using the photoresist pattern as an etch mask to form a sealant inflow preventing member 200.

Although not shown in the drawing, the sealant inflow preventing member may further form at least one along the edge portion of the display area D.

Meanwhile, an organic light emitting diode is formed on the second substrate 120 separately from forming a thin film transistor on the first substrate 100.

Referring to FIG. 7C, to form an organic light emitting diode, first, a second substrate 120 is provided. In the exemplary embodiment of the present invention, the light emitting device may be a top light emitting type that transmits light through the second substrate 120 and provides information to the user. As a result, the second substrate 120 may be made of a transparent material. For example, the second substrate 120 may be a glass substrate, plastic, or film.

The display area D, the sealing area S, and the boundary area of the second substrate 120 are defined. In the display area D, a plurality of pixels P are defined.

The first electrode 130 is formed on the second substrate 120 in the display area D. The first electrode 130 may be formed by sputtering or vacuum deposition of a conductive material. Here, the first electrode 130 is formed of a transparent conductive material so as to transmit light. For example, the first electrode 130 may be formed of ITO or IZO. Here, the first electrode 210 is used as a common electrode for all pixels.

After forming the first electrode 130, the buffer layer 132 is formed on the first electrode 130. The X-buffer layer 132 has an opening that exposes the light emitting region of the pixel P.

The buffer layer 132 is formed by patterning an inorganic layer. The inorganic layer may be formed of silicon oxide or silicon nitride. In this case, the inorganic film may be formed through chemical vapor deposition or sputtering.

In this case, the insulating pattern 134 may be further formed on the edge portion of the pixel P. FIG.

Referring to FIG. 7D, after the buffer layer 132 is formed, the partition wall 142 and the protrusion member 144 are formed on the buffer layer 215, and the additional protrusion member 146 is formed on the insulating pattern 134. do.

The partition wall 142 is formed to surround the periphery of the pixel P. At this time, the partition wall 142 serves to naturally pattern the second electrode 150 to be described later, the partition wall 142 has a reverse tapered shape. For example, the cross-sectional shape of the partition 142 has an inverted trapezoidal shape.

In order to form the partition wall 142, an organic film is formed on the substrate including the buffer layer 132. The organic film can be formed of acrylic resin, urethane resin, benzocyclobutene (BCB), polyimide (PI), or the like. The partition wall 142 is formed on the organic film through an exposure and development process.

After the partition wall 142 is formed, the protrusion member 144 is formed in the pixel P and the additional protrusion member 146 is formed in the edge portion of the pixel P. The protruding member 144 and the additional protruding member 146 have a columnar shape. Here, the projection member 144 and the additional projection member 146 is formed in a positive tapered shape. For example, the cross-sectional shape of the protrusion member 144 and the additional protrusion member 146 is formed in a regular trapezoidal shape.

The protruding member 144 and the additional protruding member 146 may be formed through an exposure and developing process on the organic film after forming an organic film that can be thickly formed to form a pillar shape. The organic layer may be formed of acrylic resin, urethane resin, benzocyclobutene (BCB), polyimide (PI), or the like.

In the embodiment of the present invention, the formation order of the partition wall 142 and the protrusion member 146 is not limited. That is, after the protrusion member 146 is formed, the partition wall 142 may be formed.

Referring to FIG. 7E, after the partition wall 142, the protrusion member 144, and the additional protrusion member 146 are formed, the organic light emitting layer 140 is formed on the first electrode 130.

Here, the organic light emitting layer 140 may be formed of a high molecular material or a low molecular material. In this case, when the organic light emitting layer 140 is formed of a low molecular weight material, the organic light emitting layer 140 may be formed through a vacuum deposition method. At this time, the organic light emitting layer 140 is formed covering the outer shell of the projection member 144 naturally.

After the organic light emitting layer 140 is formed, the second electrode 150 is formed on the organic light emitting layer 140. The second electrode 150 may be formed through a vacuum deposition method. In this case, the second electrode 150 is naturally patterned for each pixel P by the partition wall 142. As a result, the second electrode 150 may be formed without undergoing a separate shadow mask and an etching process.

In this case, a part of the second electrode 150 covers the protruding member 144, and a connection part 150a for connecting to the thin film transistor 102 is formed.

At this time, the conductive member 134 covering the additional protrusion member 146 is formed. In this case, the conductive member 134 is electrically connected to the first electrode 130. As a result, the contact member C including the insulating pattern 134, the additional protrusion member 146, and the conductive member 134 may be formed.

Referring to FIG. 7F, after the sealant 180 is formed on the first substrate 100 in the sealing region S, the first substrate 100 and the second substrate 120 are bonded to each other.

In this case, the output terminal of the thin film transistor 102 and the connection portion of the second electrode 150 are in contact with each other, so that the thin film transistor 102 and the second electrode 150 are electrically connected to each other. In addition, the common voltage pad 103 and the contact member C contact each other, and as a result, the common voltage pad 103 and the first electrode 130 are electrically connected to each other.

Here, the sealant 180 may be prevented from invading the display area D by the sealant inflow preventing member 200, thereby preventing contamination of the organic light emitting diode E, the thin film transistor 102, and the common voltage pad part. Can be.

Example  6

8A to 8D are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a sixth embodiment of the present invention. The sixth embodiment of the present invention is the same as the manufacturing method of the organic light emitting diode display of the fifth embodiment described above except for forming the sealant inflow preventing member. Therefore, duplicate description of the same manufacturing method will be omitted, and the same components and the same reference numerals will be given. In addition, the manufacturing method according to the sixth embodiment is for manufacturing the organic light emitting diode display according to the second embodiment described above.

Referring to FIG. 8A, a first electrode 130 is formed on a second substrate 120 to manufacture an organic light emitting diode display.

After forming the first electrode 130, the pixel defining pattern 132 and the insulating pattern 132 are formed on the first electrode 130. In this case, an additional insulating pattern 136 may be further formed in the boundary area disposed between the display area D and the sealing area S. FIG.

Thereafter, an inverse tapered partition wall 142 is formed on the buffer layer 132.

Referring to FIG. 8B, after the partition wall 142 is formed, the protrusion member 144 is formed on the buffer layer 132, and the protrusion member 146 is formed on the insulating pattern 132. At this time, the sealant inflow preventing member 210 is formed on the additional insulating pattern 136.

Therefore, the sealant inflow preventing member 210 is made of the same material as the protrusion member 144. In addition, the sealant inflow preventing member 210 has the same cross-sectional shape as the protrusion member 144.

Referring to FIG. 8C, after the partition wall 142, the protrusion member 144, the additional protrusion member 146, and the sealant inflow preventing member 210 are formed, the organic light emitting layer 140 and the first electrode 130 may be formed. The second electrode 150 is formed. At this time, the conductive member 152 covering the additional protrusion member 146 is formed.

Referring to FIG. 8D, a sealant 180 is formed on the second substrate 120 in the sealing region S. Referring to FIG. Subsequently, the organic light emitting diode display device is completed by bonding the second substrate 120 and the first substrate 100 on which the thin film transistor 102 is formed.

Therefore, in the embodiment of the present invention, as the sealant inflow preventing member 210 is formed in the same process as the protrusion member 144, it is not necessary to add a separate process.

Example  7

9A to 9C are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to a seventh embodiment of the present invention. The seventh embodiment of the present invention is the same as the manufacturing method of the organic light emitting diode display of the sixth embodiment described above except for forming the sealant inflow preventing member. Therefore, duplicate description of the same manufacturing method will be omitted, and the same components and the same reference numerals will be given. In addition, the manufacturing method according to the seventh exemplary embodiment is for manufacturing the organic light emitting diode display according to the third exemplary embodiment.

Referring to FIG. 9A, a first electrode 130 is formed on a second substrate 120 to manufacture an organic light emitting diode display.

After forming the first electrode 130, the buffer layer 132 and the insulating pattern 132 are formed on the first electrode 130. In this case, an additional insulating pattern 136 may be further formed in the boundary area between the display area D and the sealing area S. FIG.

Thereafter, an inverse tapered partition wall 142 is formed on the buffer layer 132, and a sealant inflow preventing member 220 is formed on the additional insulating pattern 136. Therefore, as the sealant inflow preventing member 220 is formed in the same process as the partition wall 142, the sealant inflow preventing member 220 is made of the same material as the partition wall 142.

Referring to FIG. 9B, after the barrier rib 142 and the sealant inflow preventing member 220 are formed, the protrusion member 144 is formed on the buffer layer 132 in the pixel P, and the protrusion member is formed on the insulating pattern 134. 146 is formed.

Thereafter, the organic light emitting layer 140 and the second electrode 150 are sequentially formed on the first electrode 130 exposed by the buffer layer 132.

Referring to FIG. 9C, after forming the second electrode 150, the sealant 180 is formed along the sealing region S of the second substrate 120. Subsequently, the organic light emitting diode display device is completed by bonding the second substrate 120 and the first substrate 100 on which the thin film transistor 102 is formed.

Therefore, in the embodiment of the present invention, the sealant inflow preventing member 210 does not need to add a separate process as it is formed in the same process as the partition wall 142, and more effectively fixes the sealant 180 to the sealing area S. You can.

Example  8

10A and 10B are cross-sectional views illustrating a method of manufacturing an organic light emitting diode display according to an eighth embodiment of the present invention. The eighth embodiment of the present invention is the same as the manufacturing method of the organic light emitting diode display of the seventh embodiment described above except for forming the sealant inflow preventing member. Therefore, duplicate description of the same manufacturing method will be omitted, and the same components and the same reference numerals will be given. In addition, the manufacturing method according to the eighth embodiment is for manufacturing the organic light emitting diode display according to the fourth embodiment described above.

Referring to FIG. 10A, a first electrode 130 is formed on a second substrate 120 to manufacture an organic light emitting diode display.

After forming the first electrode 130, the buffer layer 132 and the insulating pattern 132 are formed on the first electrode 130. In this case, first and second additional insulating patterns 136a and 136b are formed along the boundary area between the display area D and the sealing area S and the outside of the sealing area S, respectively.

Subsequently, a reverse tapered partition wall 142 is formed on the buffer layer 132, and a sealant inflow preventing member 220 and an additional sealant inflow preventing member 230 are formed on the first and second additional insulating patterns 136, respectively. do. That is, the sealant inflow preventing member 220 and the additional sealant inflow preventing member 230 are disposed inside and outside the sealing area S, respectively.

Thereafter, the protrusion member 144 is formed on the buffer layer 132 in the pixel P, and the protrusion member 146 is formed on the insulating pattern 134.

Thereafter, the organic light emitting layer 140 and the second electrode 150 are sequentially formed on the first electrode 130 exposed by the buffer layer 132.

Referring to FIG. 10B, after forming the second electrode 150, the sealant 180 is formed on the second substrate 120 in the sealing region S. Referring to FIG. That is, the sealant 180 is formed between the sealant inflow preventing member 220 and the additional sealant inflow preventing member 230. Subsequently, the organic light emitting diode display device is completed by bonding the second substrate 120 and the first substrate 100 on which the thin film transistor 102 is formed.

Therefore, in the embodiment of the present invention by further forming an additional sealant inflow preventing member 230 without going through a separate process, it is possible to more effectively fix the sealant 180 in the sealing area (S) and to have a uniform width Could.

As described above, the organic light emitting diode display device according to the present invention includes a sealant inflow preventing member, thereby preventing the sealant from invading into the display area, thereby reducing the defective rate of the organic light emitting diode display device.

In addition, the organic light emitting diode display device includes a sealant inflow preventing member, thereby reducing moisture and oxygen vapor permeation into the display area by using a conventional margin area as a sealing area, thereby improving the lifespan of the organic light emitting diode display device.

In addition, the organic light emitting diode display may include an additional sealant inflow preventing member, thereby forming the sealant to have a uniform width.

In addition, by forming the sealant inflow preventing member at the time of forming the partition wall or the projection member, it is not necessary to add a separate process, thereby maintaining the conventional process and preventing the sealant from invading the display area.

Although described above with reference to embodiments of the present invention, those skilled in the art can variously modify and change the present invention without departing from the spirit and scope of the invention described in the claims below. I can understand that.

Claims (26)

A first substrate having a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area; A thin film transistor provided in each pixel; A sealant disposed along the sealing area; A second substrate bonded to the first substrate by the sealant and having an organic light emitting diode electrically connected to the thin film transistor to generate light; And And a sealant inflow preventing member interposed between the first and second substrates to prevent the sealant from flowing into the display area. The method of claim 1, And an additional sealant inflow preventing member disposed along an outer portion of the sealing area. The method of claim 1, An organic light emitting diode display device, wherein the sealant inflow preventing member has a width of about 5 to 20 μm. The method of claim 1, And at least one sealant inflow preventing member is disposed at an edge portion of the display area. The method of claim 1, The sealant inflow preventing member is formed on the first substrate or the second substrate. The method of claim 1, The cross-section of the sealant inflow preventing member has a trapezoidal or inverted trapezoidal shape, characterized in that the organic light emitting diode display device. The method of claim 1, The organic light emitting diode display device of claim 1, further comprising a partition wall disposed on the second substrate and separated from each pixel. The method of claim 7, wherein And the barrier rib is made of the same material as the sealant inflow preventing member. The method of claim 7, wherein And the barrier rib has the same cross-sectional shape as the sealant inflow preventing member. The method of claim 1, And a projection member disposed in each pixel on the second substrate. The method of claim 10, And the protrusion member is formed of the same insulating material as the sealant inflow preventing member. The method of claim 1, And an insulation pattern interposed between the sealant inflow preventing member and the second substrate. The method of claim 1, The sealant inflow preventing member is made of any one of an inorganic type, an organic type, or a mixture thereof. Providing a second substrate having a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area; Forming an organic light emitting diode for each pixel in the display area and forming a sealant inflow preventing member in the boundary area; Forming a sealant along the sealing area; And Bonding the second substrate to a first substrate on which a thin film transistor is electrically connected to the organic light emitting diode device by using the sealant. The method of claim 14, In the forming of the organic light emitting diode and the sealant inflow preventing member, Forming a first electrode on a second substrate of the display area; Forming a buffer layer exposed along the periphery of the light emitting area and exposing a light emitting area of each pixel; Forming a partition wall on the buffer layer along the outer edge of the pixel to separate the pixel; Forming a protrusion member on the buffer layer, the protrusion member protruding further toward the first substrate than the barrier rib and disposed on the pixel; Forming an organic light emitting layer in at least the light emitting region; And And forming a second electrode that is naturally patterned for each pixel by the partition wall to cover the organic light emitting layer and the protrusion member. The method of claim 15, The sealant inflow preventing member is formed in the forming of the partition wall. The method of claim 16, And the sealant inflow preventing member has the same cross-sectional shape as the partition wall. The method of claim 15, And the sealant inflow preventing member is formed at the step of forming the protrusion member. The method of claim 18, The sealant inflow preventing member has the same cross-sectional shape as the protrusion member. The method of claim 15, In the forming of the buffer layer, an insulating pattern interposed between the second substrate and the sealant inflow preventing member is further formed. The method of claim 14, In the forming of the organic light emitting diode and the sealant inflow preventing member, And forming an additional sealant inflow preventing member disposed along an outer portion of the sealing area. The method of claim 14, In the step of forming the sealant inflow preventing member At least one sealant inflow preventing member is further formed at an edge portion of the display area. Providing a first substrate having a display area including a plurality of pixels for displaying an image, a sealing area disposed along a periphery of the display area, and a boundary area between the display area and the sealing area; Forming a thin film transistor on each pixel of the display area; Forming a sealant inflow preventing member on the first substrate of the boundary region; Forming a sealant in the sealing area; And And bonding the first substrate and the second substrate on which the organic light emitting diode is formed by the sealant. The method of claim 23, Between forming the sealant inflow preventing member, Forming a protective film on the first substrate including the thin film transistor; And And forming the sealant inflow preventing member on the passivation layer. The method of claim 23, In the forming of the sealant inflow preventing member, And forming an additional sealant inflow preventing member disposed along an outer portion of the sealing area. The method of claim 23, In the step of forming the sealant inflow preventing member At least one sealant inflow preventing member is further formed at an edge portion of the display area.

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