KR20080059771A - Method for manufacturing a semiconductor device - Google Patents

Method for manufacturing a semiconductor device Download PDF

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KR20080059771A
KR20080059771A KR1020060133465A KR20060133465A KR20080059771A KR 20080059771 A KR20080059771 A KR 20080059771A KR 1020060133465 A KR1020060133465 A KR 1020060133465A KR 20060133465 A KR20060133465 A KR 20060133465A KR 20080059771 A KR20080059771 A KR 20080059771A
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gate
semiconductor substrate
capping layer
region
semiconductor device
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KR1020060133465A
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KR100850105B1 (en
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김봉준
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동부일렉트로닉스 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/823418—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the source or drain structures, e.g. specific source or drain implants or silicided source or drain structures or raised source or drain structures

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

A method of fabricating a semiconductor device is provided to prevent leakage of electric current at a junction portion between first and second LDD regions by forming the first and second LDD regions in different depth. A gate(17) is formed on a semiconductor substrate(11), with a gate insulating layer(15). A capping layer(19) is formed to cover the gate, and is overlapped with both sides of the gate. The substrate is doped with impurities of different conductive types by using the gate and capping layer as a mask to form first and second LDD region(21,23). The capping layer is removed, and a spacer is formed on a side of the gate. The exposed portion of the substrate is implanted with an impurity of different conductive type by using the gate and the spacer as a mask to form a source and drain region.

Description

반도체장치의 제조방법{METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE}METHODS FOR MANUFACTURING A SEMICONDUCTOR DEVICE

도 1a 내지 도 1c는 본 발명에 따른 반도체장치의 제조방법을 도시하는 공정도.1A to 1C are process drawings showing a method of manufacturing a semiconductor device according to the present invention.

* 도면의 주요부분에 대한 부호의 설명 *Explanation of symbols on the main parts of the drawings

11 : 기판 13 : 소자분리막11 substrate 13 device isolation film

15 : 게이트절연막 17 : 게이트15 gate insulating film 17 gate

19 : 캡핑층 21 : 제 1 LDD 영역19 capping layer 21 first LDD region

23 : 제 2 LDD 영역 25 : 스페이서23: second LDD region 25: spacer

27 : 소오스영역 28 : 드레인영역27 source region 28 drain region

본 발명은 반도체 장치의 제조방법에 관한 것으로서, 보다 상세하게는, 2중의 LDD(Lightly Doped Drain) 영역을 갖는 반도체장치의 제조방법에 관한 것이다.The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device having a double lightly doped drain (LDD) region.

반도체 장치의 고집적화가 이루어짐에 따라 채널 길이가 짧아져 단 채널 효과(short channel effect)에 의한 누설 전류가 많이 발생한다. 이 누설 전류는 반도체 장치의 신뢰성을 저하시키는 문제점이 있었다.As the semiconductor device is highly integrated, the channel length is shortened, resulting in a large amount of leakage current due to a short channel effect. This leakage current has a problem of lowering the reliability of the semiconductor device.

이에 누설 전류를 방지하기 위해 LDD(Lightly Doped Drain) 구조가 제안되었다. 종래 기술에 따른 LDD 구조를 형성하는 방법은 반도체기판 상에 게이트를 형성하고, 이 게이트를 마스크로 하여 반도체기판과 다른 도전형의 불순물을 저농도로 도핑하여 저농도 영역을 형성한다. 그리고, 게이트의 측면에 스페이서를 형성하고 저농도영역과 동일한 도전형의 불순물을 고농도로 도핑하여 소오스 및 드레인 영역을 형성한다.In order to prevent leakage current, a lightly doped drain (LDD) structure has been proposed. In the conventional method for forming an LDD structure, a gate is formed on a semiconductor substrate, and the gate is used as a mask to form a low concentration region by lightly doping impurities of a semiconductor substrate and another conductive type. A spacer is formed on the side of the gate and doped with a high concentration of impurities of the same conductivity type as the low concentration region to form a source and a drain region.

전술한 바와 같이 형성된 종래 기술에 따른 반도체장치는 LDD 영역에 의해 접합 사이에 누설 전류가 흐르는 것을 방지하였다.The semiconductor device according to the related art formed as described above prevents the leakage current from flowing between the junctions by the LDD region.

그러나, 반도체 장치에서 채널의 길이가 짧아질수록 LDD 영역에 의해 누설 전류를 감소시키기 어려운 문제점이 있었다.However, as the length of the channel becomes shorter in the semiconductor device, it is difficult to reduce the leakage current by the LDD region.

그러므로, 본 발명은 반도체 장치에서 채널 길이가 짧아져도 LDD 영역에 의해 누설 전류를 감소시킬 수 있는 반도체장치의 제조방법을 제공하는 것을 그 목적으로 한다.It is therefore an object of the present invention to provide a method for manufacturing a semiconductor device which can reduce leakage current by the LDD region even if the channel length is shortened in the semiconductor device.

전술한 목적을 달성하기 위한 본 발명에 따른 반도체장치의 제조방법은, 반도체 기판 상에 게이트절연막을 개재시켜 게이트를 형성하는 공정과, 상기 게이트를 덮고 반도체기판의 게이트 양측과 중첩되는 캡핑층을 형성하는 공정과, 상기 반도체기판에 다른 도전형의 불순물을 상기 게이트 및 캡층을 마스크로 저농도로 도핑하여 접합 깊이가 서로 다른 제 1 및 제 2 LDD 영역을 형성하는 공정과, 상기 캡 층을 제거하고 게이트의 측면에 스페이서를 상기 제 2 영역과 중첩되게 형성하는 공정과, 상기 게이트 및 스페이서을 마스크로 하여 상기 반도체기판의 노출된 부분에 다른 도전형의 불순물을 고농도로 이온 주입하여 소오스 및 드레인영역을 형성하는 공정을 포함한다.In accordance with another aspect of the present invention, there is provided a method of manufacturing a semiconductor device, including forming a gate on a semiconductor substrate with a gate insulating film interposed therebetween, and forming a capping layer overlapping both sides of the gate of the semiconductor substrate. Forming a first and a second LDD region having different junction depths by doping the semiconductor substrate with different conductivity type impurities at low concentration using the gate and the cap layer as a mask; and removing the cap layer and removing the gate layer. Forming spacers on the side surfaces of the semiconductor substrate and overlapping the second region; and source and drain regions by implanting impurities of different conductivity type into the exposed portions of the semiconductor substrate using the gate and the spacer as masks. Process.

상기에서 캡핑층을 TEOS로 100Å ∼ 300Å의 두께로 형성한다.In the above, the capping layer is formed to a thickness of 100 kPa to 300 kPa in TEOS.

이하, 본 발명에 따른 반도체 장치의 제조 방법은 첨부도면을 참조하여 다음과 같이 상세하게 설명된다.Hereinafter, a method of manufacturing a semiconductor device according to the present invention will be described in detail as follows with reference to the accompanying drawings.

도 1a 내지 도 1c을 참조하면, 본 발명에 따른 반도체장치의 제조 방법을 단계적으로 설명하는 공정도가 도시된다.1A to 1C, a process diagram illustrating step by step a method of manufacturing a semiconductor device according to the present invention is shown.

먼저, 도 1a에 도시된 바와 같이, 통상의 STI(Shallow Trench Isolation) 방법에 의해 반도체 기판(11)에 트렌치를 형성하고, 트렌치 내부를 절연막으로 매립함으로써 소자 분리막(13)을 형성한다. 이 소자 분리막(13)은 반도체 기판(11)에서 활성영역을 한정하는 역할을 한다.First, as shown in FIG. 1A, a trench is formed in the semiconductor substrate 11 by a conventional shallow trench isolation (STI) method, and the isolation layer 13 is formed by filling the trench with an insulating film. The device isolation layer 13 serves to define an active region in the semiconductor substrate 11.

물론, STI 방법과 달리 반도체 기판 상에 산화막을 선택적으로 성장시켜 소자 분리막을 형성하는 로코스(LOCOS : Local Oxidation of Silicon) 방법을 사용할 수도 있다.Of course, unlike the STI method, a local oxide of silicon (LOCOS) method may be used in which an oxide film is selectively grown on a semiconductor substrate to form an isolation layer.

그 다음, 반도체 기판(11)의 활성영역 상에 게이트 절연막(15)을 개재시켜 게이트(17)를 형성한다.Next, the gate 17 is formed on the active region of the semiconductor substrate 11 with the gate insulating film 15 interposed therebetween.

이후, 도 1b에 도시된 바와 같이, 반도체 기판(11) 상에 TEOS 등의 산화실리콘을 화학기상증착(CVD) 등의 방법으로 게이트(17)를 덮도록 증착한다. 이때, 산화 실리콘은 100Å ∼ 300Å 정도의 두께로 증착된다. Thereafter, as illustrated in FIG. 1B, silicon oxide such as TEOS is deposited on the semiconductor substrate 11 so as to cover the gate 17 by a chemical vapor deposition (CVD) method. At this time, silicon oxide is deposited to a thickness of about 100 kPa to about 300 kPa.

그리고, 포토리쏘그래피 방법을 이용하여, 산화실리콘을 반도체기판(11)의 게이트(11) 상부를 덮으면서 게이트(17) 양측과 중첩되어 잔류되도록 패터닝함으로서 캡핑층(19)을 형성한다.Then, the capping layer 19 is formed by patterning the silicon oxide so as to overlap the both sides of the gate 17 while covering the upper portion of the gate 11 of the semiconductor substrate 11 by using a photolithography method.

그 다음, 게이트(17) 및 캡핑층(19)을 마스크로서 사용하여 반도체 기판(11)에 반도체 기판(11)과 다른 도전형의 불순물을 저농도로 이온 주입함으로서, 제 1 및 제 2 LDD 영역(21 및 23)을 형성한다. 이 과정에서, 상기 이온 주입시 주입되는 불순물 이온은 캡핑층(19)을 관통하여 반도체 기판(11)에 주입되는 정도의 에너지로 주입하는 것이 바람직하다. 이에 의해, 반도체 기판(11)에 주입되는 불순물 이온은 캡핑층(19)을 관통하여 주입되는 것의 주입 깊이와 캡핑층(19)을 관통하지 않고 바로 주입되는 것의 주입 깊이가 서로 다르게 된다. 보다 상세히 말해서, 캡핑층(19)에서 게이트(17)의 양측의 가장자리 부분에는 산화실리콘이 잔류하게 되고 캡핑층(19) 이외의 나머지 영역에는 잔류하는 산화실리콘이 없다. 이 상태에서, 저농도 불순물 이온 주입을 하면, 산화실리콘이 잔류하는 영역은 저농도 불순물의 주입 깊이가 얕은데 비하여, 산화실리콘이 잔류하지 않은 영역은 저농도 불순물의 주입 깊이가 보다 깊다. Then, by using the gate 17 and the capping layer 19 as a mask, ion implantation of impurities of a different conductivity type from the semiconductor substrate 11 into the semiconductor substrate 11 is carried out at low concentration so that the first and second LDD regions ( 21 and 23). In this process, it is preferable that the impurity ions implanted during the ion implantation are implanted at an energy level enough to be injected into the semiconductor substrate 11 through the capping layer 19. As a result, the implantation depth of the impurity ions implanted into the semiconductor substrate 11 is different from that of implanted through the capping layer 19 and that of the impurity implanted directly without penetrating the capping layer 19. More specifically, in the capping layer 19, silicon oxide remains on both edge portions of the gate 17, and there is no remaining silicon oxide in the remaining regions other than the capping layer 19. In this state, when the implantation of low concentration impurity ions is carried out, the implantation depth of low concentration impurities is shallow in the region where silicon oxide remains, whereas the implantation depth of low concentration impurities is deeper in the region where silicon oxide remains.

그 결과, 제 1 및 제 2 LDD 영역(21 및 23)은 반도체 기판(11)의 서로 다른 깊이에서 접합되어 2중 구조를 갖는다. 이때, 캡핑층(19)과 중첩되지 않은 부분에 형성되는 제 2 LDD 영역(23)은 캡핑층(19)과 중첩되는 부분에 형성되는 제 1 LDD 영역(21) 보다 깊은 부분에서 제1 LDD 영역과 접합되게 형성된다.As a result, the first and second LDD regions 21 and 23 are bonded at different depths of the semiconductor substrate 11 to have a double structure. In this case, the second LDD region 23 formed in the portion not overlapping the capping layer 19 may be deeper than the first LDD region 21 formed in the portion overlapping the capping layer 19. It is formed to be bonded with.

이후, 도 1c를 참조하면, 그 다음 단계로서 캡핑층(19)을 제거한다. 그리고, 다시 반도체기판(11) 상에 게이트(17)를 덮도록 산화실리콘 또는 질화실리콘을 증착한다. 그 다음, RIE(Reactive Ion Etching) 등의 방법으로 게이트(17)를 덮고 있는 산화실리콘 또는 질화실리콘을 에치백하여 게이트(17)의 측면에 스페이서(25)를 형성한다. 이 때, 스페이서(25)를 제 2 영역(23)과 중첩되게 형성한다.1C, the capping layer 19 is removed as a next step. Then, silicon oxide or silicon nitride is deposited on the semiconductor substrate 11 to cover the gate 17. Next, silicon oxide or silicon nitride covering the gate 17 is etched back by a reactive ion etching (RIE) method to form a spacer 25 on the side of the gate 17. At this time, the spacer 25 is formed to overlap the second region 23.

그리고, 게이트(17) 및 스페이서(25)를 마스크로 이용하여 게이트(17) 및 스페이서(25) 이외의 반도체 기판(11)의 노출된 영역에 반도체 기판(11)과 다른 도전형의 불순물을 고농도로 이온 주입함으로써, 소오스 및 드레인 영역(27) 및 (28)을 형성한다.Then, using the gate 17 and the spacer 25 as a mask, high concentrations of impurities of a conductivity type different from the semiconductor substrate 11 are exposed in the exposed regions of the semiconductor substrate 11 other than the gate 17 and the spacer 25. By ion implantation, the source and drain regions 27 and 28 are formed.

이러한 결과적 구조에서, 제 2 LDD 영역(23)은 제 1 LDD 영역(21)과 소오스 및 드레인 영역(27) 및 (28) 사이에 접합 형성되어 있기 때문에, 채널 길이가 짧아져도 드레인 확장에 의한 누설 전류가 흐르는 것을 효과적으로 차단할 수 있다.In this resultant structure, since the second LDD region 23 is formed in a junction between the first LDD region 21 and the source and drain regions 27 and 28, leakage due to drain expansion even if the channel length is shortened. It can effectively block the flow of current.

전술한 바와 같이 본 발명은 캡핑층을 게이트를 덮고 반도체 기판 상의 게이트 양측과 중첩되게 형성하고 불순물을 저농도로 이온 주입하여 반도체 기판에 접합 깊이가 서로 다른 제 1 및 제 2 LDD 영역을 이중으로 형성한다. 그 결과 제1 및 제2 LDD 영역의 접합 사이의 누설 전류를 방지할 수 있다.As described above, the present invention forms a capping layer overlapping both sides of the gate on the semiconductor substrate and implants impurities at low concentration to form first and second LDD regions having different junction depths on the semiconductor substrate. . As a result, leakage current between the junctions of the first and second LDD regions can be prevented.

이상에서 설명한 본 발명은 전술한 실시예 및 첨부된 도면에 의해 한정되는 것이 아니고, 본 발명의 기술적 사상을 벗어나지 않는 범위 내에서 여러 가지 치환, 변형 및 변경이 가능하다는 것이 본 발명이 속하는 기술분야에서 통상의 지식 을 가진 자에게 있어 명백할 것이다.The present invention described above is not limited to the above-described embodiments and the accompanying drawings, and various substitutions, modifications, and changes are possible in the art without departing from the technical spirit of the present invention. It will be apparent to those of ordinary skill.

Claims (3)

반도체 기판 상에 게이트 절연막을 개재시켜 게이트를 형성하는 공정과,Forming a gate through a gate insulating film on the semiconductor substrate; 상기 게이트를 덮으면서 상기 반도체기판의 게이트 양측과 중첩되는 캡핑층을 형성하는 공정과,Forming a capping layer overlapping both sides of the gate of the semiconductor substrate while covering the gate; 상기 반도체 기판에 다른 도전형의 불순물을 상기 게이트 및 캡층을 마스크로 이용하여 저농도로 도핑하여 접합 깊이가 서로 다른 제 1 및 제 2 LDD 영역을 형성하는 공정과,Forming a first and a second LDD region having different junction depths by doping at a low concentration using the gate and cap layers as a mask with impurities of another conductivity type in the semiconductor substrate; 상기 캡층을 제거하고 게이트의 측면에 스페이서를 상기 제 2 영역과 중첩되게 형성하는 공정과,Removing the cap layer and forming a spacer on a side surface of the gate so as to overlap the second region; 상기 게이트 및 스페이서를 마스크로 하여 상기 반도체기판의 노출된 부분에 다른 도전형의 불순물을 고농도로 이온 주입하여 소오스 및 드레인 영역을 형성하는 공정을 포함하는 반도체장치의 제조방법.And forming a source and a drain region by ion implanting impurities of different conductivity type into the exposed portions of the semiconductor substrate using the gate and the spacer as masks. 청구항 1에 있어서,The method according to claim 1, 상기 캡핑층을 TEOS로 형성하는 반도체장치의 제조방법.A method for manufacturing a semiconductor device, wherein the capping layer is formed of TEOS. 청구항 2에 있어서,The method according to claim 2, 상기 캡핑층을 100Å ∼ 300Å의 두께로 형성하는 반도체장치의 제조방법.A method of manufacturing a semiconductor device, wherein the capping layer is formed to a thickness of 100 kPa to 300 kPa.
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KR101531880B1 (en) * 2008-12-30 2015-06-26 주식회사 동부하이텍 Semiconductor device and method of manufacturing the same
CN105448838A (en) * 2014-08-12 2016-03-30 中芯国际集成电路制造(上海)有限公司 Semiconductor memory device, manufacturing method thereof, and electronic device

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101531880B1 (en) * 2008-12-30 2015-06-26 주식회사 동부하이텍 Semiconductor device and method of manufacturing the same
CN105448838A (en) * 2014-08-12 2016-03-30 中芯国际集成电路制造(上海)有限公司 Semiconductor memory device, manufacturing method thereof, and electronic device

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