KR20080048780A - Display device and manufacring methfod of the same - Google Patents

Abstract

A display device and a manufacturing method thereof are provided to form sensing electrodes on the same layer as pixel electrodes, thereby uniformly maintaining electrical characteristics between sub pixels. A main pixel is formed on the first substrate and includes plural sub pixels. A cell gap area is formed adjacently to one among the sub pixels and has a step portion with the predetermined height. A sensing area is formed adjacently to the remaining sub pixels without the cell gap area. A second substrate(200) is located oppositely to the first substrate. A cell gap spacer(240) is formed oppositely to the cell gap area on the second substrate. A sensing spacer(250) is formed oppositely to the sensing area on the second substrate and has the same height as the cell gap spacer. The sub pixel is an oblong shape. The cell gap area and the sensing area are formed adjacently to the short side of the sub pixel along a side of the main pixel.

Description

DISPLAY DEVICE AND MANUFACRING METHFOD OF THE SAME}

1 is a plan view of a display device according to a first embodiment of the present invention;

2 is a cross-sectional view of a display device according to II′-II ′ of FIG. 1;

3A and 3B are views for explaining a method of manufacturing a second substrate of the display device according to the first embodiment of the present invention;

4A to 5D are views for explaining a method of manufacturing a first substrate of a display device according to a first embodiment of the present invention;

6 is a cross-sectional view of a display device according to a second embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

100: first substrate 120: gate line

122: sustain electrode line 123: first signal line

130: common electrode 160: data line

163: second signal line 180: pixel electrode

181: first sensing electrode 182: second sensing electrode

183: third sensing electrode 200: second substrate

230: sensing spacer 240: cell gap spacer

The present invention relates to a display apparatus and a manufacturing method thereof, and more particularly, to a display apparatus and a manufacturing method thereof.

In general, the touch panel is provided on the uppermost side of the display device to directly select the instructions displayed on the screen of the display panel, such as a liquid crystal display panel, by a human hand or an object and directly contact the hand and the object. Since the display device including the touch panel does not need a separate input device connected to the display device such as a keyboard and a mouse, its use is increasing.

On the other hand, recently, a pressure-sensitive sensor for detecting an external contact is not provided separately in the form of a panel has been developed and used built-in touch panel that is mounted inside the display panel. In the case of the built-in touch panel, electrodes, spacers, etc. for sensing are formed in a portion where a pixel is formed.

If the size of the pixels representing red, green, and blue changes due to the additional configuration, a kickback voltage difference between pixels is caused, and an additional process by forming spacers is required.

Accordingly, an object of the present invention is to provide a display device and a method of manufacturing the same, in which the manufacturing process is simple and the kickback voltage difference between pixels is reduced.

The object is, according to the present invention, a first substrate; A main pixel formed on the first substrate and including a plurality of subpixels; A cell gap region formed adjacent to any one of the subpixels and having a stepped portion having a predetermined height; A sensing region formed adjacent to the remaining subpixels in which the cell gap region is not formed; A second substrate facing the first substrate; A cell gap spacer formed opposite the cell gap region on the second substrate; It is achieved by a display device including a sensing spacer facing the sensing region on the second substrate, the sensing spacer is formed substantially the same height as the cell gap spacer.

The subpixel may have a rectangular shape, and the cell gap region and the sensing region may be formed adjacent to a short side of the subpixel along one side of the main pixel.

The main pixel may include a plurality of gate lines formed on the first substrate and data lines insulated from and intersecting the gate lines; A plurality of thin film transistors formed at intersections of the gate lines and the data lines, and pixel electrodes electrically connected to the thin film transistors and having substantially the same area; A first sensing line extending in a direction parallel to the gate line; A second sensing line crossing the first sensing line and extending in a direction parallel to the date line; A first sensing electrode electrically connected to the first sensing line; And a second sensing electrode electrically connected to the second sensing line.

The first sensing line extends into the cell gap region, and the stepped portion may be formed by the first sensing line extending into the cell gap region.

The stepped portion may be formed of a semiconductor layer and data lines formed through one photolithography process.

The height of the step portion may be about 2500 to 3500Å.

The main pixel may include a common electrode formed on the first substrate; A storage electrode line crossing the main pixel and formed in parallel with the gate line; The display device may further include a third sensing electrode extending from the sustain electrode line to the sensing region.

And a floating electrode layer formed on the cell gap spacer and the sensing spacer.

The display device may further include a common electrode formed on the sensing spacer and the cell gap spacer.

Meanwhile, according to the present invention, there is provided a method of manufacturing a display apparatus, comprising: providing a second substrate having cell gap spacers and sensing spacers having substantially the same height; The method may also be achieved by a method of manufacturing a display apparatus including providing a first substrate having a cell gap region having a predetermined stepped portion at a portion corresponding to the cell gap spacer.

Hereinafter, the present invention will be described with reference to the accompanying drawings.

In various embodiments, like reference numerals refer to like elements, and like reference numerals refer to like elements in the first embodiment and may be omitted in other embodiments.

1 is a plan view of a display apparatus according to a first embodiment of the present invention, and FIG. 2 is a cross-sectional view of the display apparatus according to II′-II of FIG. 1. The display device according to the present exemplary embodiment is formed between the first substrate 100 on which the main pixel is formed, the second substrate 200 facing the first substrate 100 and both substrates 100 and 200 (not shown). It includes a liquid crystal layer. The display apparatus is a display apparatus having a touch screen function capable of displaying an image formed corresponding to an external pressure, and has a built-in type in which a sensing unit for sensing pressure is included in the substrates 100 and 200.

The main substrate 1 is arranged in a matrix form on the first substrate 100, and one main pixel 1 includes a red subpixel R, a green subpixel G, and a blue subpixel B. do. The subpixels RGB are rectangular, and the area of each subpixel RGB is substantially the same. Each of the subpixels RGB includes at least one thin film transistor T and a pixel electrode 180 electrically connected to the thin film transistor T.

In addition, the main pixel 1 is formed adjacent to any one of the subpixels RGB, and has a cell gap region I having a stepped portion having a predetermined height, and the remaining subpixel RGB where the cell gap region I is not formed. And a sensing region (II) capable of outputting a predetermined analog signal in response to external pressure. According to the present embodiment, as shown in FIG. 1, the cell gap region I is formed adjacent to the short side of the red subpixel R, and the green subpixel G and the blue subpixel B are formed. A sensing region (II) is formed adjacent to the short side.

Specifically, the gate wirings 120, 121, 122, 123, and 124 are formed on the first insulating substrate 110, and the gate wirings 120, 121, 122, 123, and 124 may be a metal single layer or multiple layers. Can be. The gate wirings 120, 121, 122, 123, and 124 overlap with the gate line 120 extending in the horizontal direction, the gate electrode 121 extending from the gate line 120, and the pixel electrode 180. The stepped portion 124 extending from the first sensing line 123 and the first sensing line 123 to the cell gap region I, which are formed in parallel with the sustain electrode line 122 and the gate line 120. It includes.

Although the gate line 120 and the first sensing line 123 are formed to be parallel to each other, according to another exemplary embodiment, the gate line 120 and the first sensing line 123 may be deformed in a zigzag shape according to the shape of the stepped portion 124 or the sensing region II. It may be provided not parallel to each other.

When the pressure is applied to the sensing region (II), the first sensing line 123 is a passage through which an analog signal such as current or voltage is transmitted through the first sensing electrode 181, and provides the position information of the place where the pressure is applied. It serves to provide a panel driver (not shown).

The height d2 of the stepped portion 124 is about 2500 to 3500 kPa, more preferably about 3000 kPa. As shown in FIG. 2, the gap between the first substrate 100 and the second substrate 200 in the sensing region II is spaced apart by the distance d2 due to the stepped portion 124.

The common electrode 130 is formed at a portion that is divided into the gate line 120 and the first sensing line 123 and in which the subpixel RGB is to be formed. The common electrode 130 according to the present exemplary embodiment is formed on the lowermost layer of the first substrate 100 instead of the second substrate 200, and forms an electric field for controlling the arrangement of liquid crystals together with the pixel electrode 180. The common electrode 130 is made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO).

Therefore, according to the present exemplary embodiment, the sustain electrode line 122 and the common electrode 130 directly contact each other. The storage electrode line 122 connects the common electrodes 130 spaced apart from each other and applies a common voltage.

The gate insulating layer 140 made of silicon nitride (SiNx) or the like covers the gate wirings 320, 321, 330, 340, 341, and 342 on the first insulating substrate 110.

The semiconductor layer 150 and the data on the gate electrode 121, the gate insulating layer 140 of the stepped part 123, and the gate insulating layer 140 on which the first to third sensing electrodes 181 to 183 are to be formed. Wiring is formed. In addition, an ohmic contact layer made of a material such as n + hydrogenated amorphous silicon doped with a high concentration of silicide or n-type impurities (not shown) may be formed between the semiconductor layer 150 and the data line.

The data line can also be a single layer or multiple layers of metal layers. The data line is formed in parallel with the data line 160, the source electrode 161, the drain electrode 162, and the data line 160, which are formed in the vertical direction to cross the gate line 120 to form a pixel. The first sensing data electrode 164 and the second sensing electrode 182 formed at a position where the second sensing line 163 and the first sensing electrode 181 intersect the sensing line 123 are to be provided. A step in which the second sensing data electrode 165 formed at the position, the third sensing data electrode 166 formed at the position where the third sensing electrode 183 is to be provided, and the stepped portion 124 are formed thereon. A sub data electrode 167 is included.

The data line 160 for supplying data voltages to the red and green subpixels R and G according to the present exemplary embodiment is formed between the red and green subpixels R and G, and is connected to the blue subpixel B. The data line 160 for supplying the data voltage is provided on the right side. A third sensing electrode 166 is formed between the green and blue subpixels G and B and extends from an upper portion of the second sensing line 163 and the sustain electrode line 122. That is, two signal lines are arranged between each of the subpixels R, G, and B, and the interval between the subpixels R, G, and B is constant.

The drain electrode 162 is branched from the data line 160, and the source electrode 161 is connected to the pixel electrode 180 through the contact hole 10.

When the pressure is applied to the sensing region (II), the second sensing line 163 becomes a passage through which the analog signal such as current or voltage is transmitted through the second sensing electrode 182, and provides the position information of the place where the pressure is applied. It serves to provide a panel driver (not shown).

The first sensing data electrode 164 is electrically connected to the first sensing electrode 181 and the first sensing line 123, and the second sensing data electrode 165 is connected to the second sensing electrode 182. The third sensing data electrode 166 is connected to the third sensing electrode 183 and the sustain electrode line 122. The common voltage supplied from the sustain electrode line 122 is transferred to the first sensing electrode 181 and the second sensing electrode 182 through the third sensing data electrode 166.

The passivation layer 170 is formed on the data lines 160 to 167 and the semiconductor layer 150 not covered by the data lines 160 to 167. The passivation layer 170 includes a source electrode 162, a sustain electrode line 122, a third sensing data electrode 166, a second sensing data electrode 165, a first sensing data electrode 164, and a first sensing line 123. ) The contact holes 10, 20, 30, 40, 50, and 60 are formed.

The pixel electrode 180, the first sensing electrode 181, the second sensing electrode 182, the third sensing electrode 183, and the stepped electrode 184 are formed on the passivation layer 170. The pixel electrode 180 is generally made of a transparent conductive material such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the sensing electrodes 181 to 183 are formed on the same layer as the pixel electrode 180. The areas of the common electrode 130 and the pixel electrode 180 forming the subpixel RGB are substantially the same, and this is to reduce the kickback voltage difference that may occur due to the difference in size of the subpixel RGB. That is, in order to make the electrical characteristics between the subpixels RGB uniform, the areas of the common electrode 130 and the pixel electrode 180 to which the electric field is applied are preferably the same between the red, green, and blue subpixels.

The third sensing electrode 183 also serves as a bridge electrode that electrically connects the first sensing data electrode 164 and the first sensing line 123.

As illustrated in FIG. 2, the deposition material on the first substrate 100 constituting the cell gap region I and the sensing region II is formed in the same manner except for the stepped portion 124. . That is, in the cell gap region I, the gate insulating layer 140, the semiconductor layer 150, the data lines 160 to 167, and the passivation layer 170 having the same thickness are formed in the sensing region II, and the cell gap region I is formed. ) Is formed higher by the height d2 of the stepped portion 124 than the sensing region II. Therefore, when the second substrate 200 and the first substrate 100 are bonded to each other, the distance between the two substrates 100 and 200 corresponds to the height d2 of the stepped portion 124.

In order to adjust the height between the substrates 100 and 200 to d2, the semiconductor layer 150 and the data lines 167 and 164 are disposed below the stepped portion 124 of the cell gap region I and the first sensing electrode 183. ).

Next, the second substrate 500 will be described.

The black matrix 220 is formed on the second insulating substrate 210. The black matrix 220 generally distinguishes between red, green, and blue filters, and serves to block direct light irradiation to the thin film transistor positioned on the first substrate 100. The black matrix 220 is usually made of a photosensitive organic material to which black pigment is added. As the black pigment, carbon black or titanium oxide is used.

A color filter layer (not shown) is formed on the second insulating substrate 210 on which the pixel electrode 180 is formed.

The overcoat layer 230 is formed on the black matrix 220 not covered by the color filter layer and the color filter layer. The overcoat layer 230 serves to planarize and protect the color filter layer, and an acrylic epoxy material is commonly used.

The cell gap spacer 240 for forming the cell gap and the sensing spacer 250 for transmitting the sensing stimulus are formed on the overcoat layer 230. The cell gap spacers 240 are formed in the cell gap region I and the sensing spacers 250 are formed in the sensing region II, and have the same height d1. Cell gap spacer 240 The first substrate 100 and the second substrate 200 can maintain a constant distance, and the liquid crystal (not shown) is injected into the space where the two substrates 100 and 200 are spaced apart. The sensing spacer 250 transmits a predetermined stimulus to the first substrate 100 when the user applies a predetermined stimulus to the upper portion of the second substrate 200.

The floating electrode layer 260 is formed on the cell gap spacer 240 and the sensing spacer 250. The floating electrode layer 260 is made of a transparent conductive material such as the pixel electrode 180 and maintains a floating state in which no separate electrical signal is applied. The floating electrode layer 260 in the floating state corresponds to the contact metal layer contacting the first to third sensing electrodes 181 to 183 by a user's stimulus.

As such, the layer deposited on the second substrate 200 is sequentially deposited from the black matrix 220 to the floating electrode layer 260 to have the same thickness anywhere.

When an external magnetic pole is generated on the sensing region II, the floating electrode layer 260 of the sensing spacer 250 is in contact with the third sensing electrode 183 to which the common voltage is applied. The common voltage is transmitted from the third sensing electrode 183 through the floating electrode layer 260 to the first and second sensing electrodes 181 and 812, and the signals transmitted in this manner are the first sensing line 123 and the second sensing electrode. It is input to the panel driver (not shown) through the sensing line 163. The panel driver determines whether the external stimulus is applied by checking whether the electrical signal is transmitted from the main pixel 1 at which position.

According to the present exemplary embodiment, since the common electrode 130 to which the common voltage is applied is formed on the first substrate 100, the floating electrode layer 260 on the second substrate 200 is removed from the main pixel 1 region. It shall be kept in a state where no voltage is applied.

According to another embodiment, the common electrode may be formed on the second substrate 200. In this case, the common electrode is provided on the front surface of the second substrate 200 without having to pattern the common electrode in a specific region, and the common voltage is directly applied to the first sensing electrode and the second sensing electrode for the external magnetic pole. .

A liquid crystal layer (not shown) including liquid crystal molecules is positioned between the first substrate 300 and the second substrate 500.

3A and 3B are views for explaining a method of manufacturing a second substrate of the display device according to the first embodiment of the present invention.

First, the black matrix 220 and the overcoat layer 230 are formed on the second insulating substrate 210. The black matrix 220 may be formed by a photolithography method using a mask.

3A, the spacer material 240a forming the cell gap spacer 240 and the sensing spacer 250 is deposited, and the photosensitive material 400 is formed on the spacer material 240a. A mask 310 in which the cell gap spacer 240 and the sensing spacer 250 are patterned is disposed on the spacer material 240a, and then exposed. The spacer material 240a is of a negative type in which the exposed portion is decomposed.

After the development and etching process using the exposed spacer material 240a, the cell gap spacer 240 and the sensing spacer 250 as shown in FIG. 3B are simultaneously formed. In the related art, in order to maintain a predetermined gap between the first substrate 100 and the second substrate 200 in the sensing region II, the gap between the cell gap spacer 240 and the sensing spacer 250 should be formed differently. . In other words, in order to form the cell gap spacer 240 and the sensing spacer 250 having different thicknesses, the cell gap spacer 240 and the sensing spacer 250 are formed by using a special mask or two or more photolithography processes. In the display device according to the present embodiment, the cell gap spacer 240 and the sensing spacer 250 may be formed to prevent the inconvenience of the process and to easily adjust the gap between the first substrate 100 and the second substrate 200. The second substrate 200 is formed to have the same thickness d1 in the manufacturing process, and the stepped portion 124 for adjusting the gap is formed on the first substrate 100. As will be described later, the stepped portion 124 may be formed on the first substrate 100 using the existing process as it is.

Then, the floating electrode material 260a and the photosensitive material 400 are deposited on the cell gap spacer 240 and the sensing spacer 250, and exposed, developed, and etched using the mask 310. The second substrate 200 is formed.

4A to 5D are views for explaining a method of manufacturing a first substrate of a display device according to a first embodiment of the present invention. 4A to 4C are plan views illustrating manufacturing processes, and FIGS. 5A and 5D are cross-sectional views illustrating manufacturing processes. In the display device according to the present exemplary embodiment, the data line 160 to 167 and the semiconductor layer 150 are manufactured in a four sheet process in which one mask is formed.

First, as shown in FIGS. 4A and 5A, a gate metal layer is deposited and patterned on the first insulating substrate 110 to form gate wirings 120, 121, 122, 123, and 124.

Next, as shown in FIG. 4B, a common electrode 130 made of a transparent conductive material is formed in the subpixels R, G, and B regions.

Subsequently, as shown in FIG. 5B, the gate insulating layer 140 and the semiconductor layer 150 made of silicon nitride are continuously deposited on the entire surface of the first insulating substrate 110 by chemical vapor deposition, and then data lines are formed. In order to form the conductor layer 160a, a photosensitive material 400 is applied thereon.

Thereafter, the photosensitive material 400 is irradiated with light through the mask 300 and then developed to form a photoresist pattern. At this time, all of the photoresist pattern is removed except for the portion where the data lines 160 to 167 are to be formed.

After the development and etching process using the photoresist pattern, the first to third sensing data electrodes 164, 165 and 166 and the stepped data electrode 167 are formed as shown in FIG. 5C.

4C and 5D, the passivation layer 170 is formed on the patterned data lines 160 to 167 and the gate insulating layer 140, and the contact holes 10 to 60 are formed.

Finally, when the pixel electrode 180, the first to third sensing electrodes 181, 182, and 183 and the stepped electrode 184 are formed on the passivation layer 170, the first substrate 100 of FIGS. 1 and 2 is formed. ) Is completed.

6 is a cross-sectional view of a display device according to a second embodiment of the present invention.

In the display device according to the present exemplary embodiment, the stepped portion is formed by the semiconductor layer 150 and the stepped portion data electrode 167 formed on the first substrate 100. That is, the thickness of the stepped portion is the total thickness d3 of the semiconductor layer 150 and the stepped data electrode 167 formed through one mask, which is the first substrate 100 and the second substrate in the sensing region II. The separation distance d3 between the substrates 200 becomes. As described above, the separation distance d3 is preferably 2500 to 3500 m 3, preferably about 3000 m 3.

Only the gate insulating layer 140 and the passivation layer 170 are formed under the first to third sensing electrodes 182 to 183.

Although some embodiments of the invention have been shown and described, it will be apparent to those skilled in the art that modifications may be made to the embodiment without departing from the spirit or spirit of the invention. . It is intended that the scope of the invention be defined by the claims appended hereto and their equivalents.

As described above, according to the present invention, there is provided a display apparatus and a method of manufacturing the same, in which the manufacturing process is simple and the kickback voltage difference between pixels is reduced.

Claims (14)

A first substrate; A main pixel formed on the first substrate and including a plurality of subpixels; A cell gap region formed adjacent to any one of the subpixels and having a stepped portion having a predetermined height; A sensing region formed adjacent to the remaining subpixels in which the cell gap region is not formed; A second substrate facing the first substrate;  A cell gap spacer formed opposite the cell gap region on the second substrate; And a sensing spacer facing the sensing region on the second substrate and formed at substantially the same height as the cell gap spacer. The method of claim 1, The subpixel is rectangular, And the cell gap region and the sensing region are formed adjacent to a short side of the subpixel along one side of the main pixel. The method of claim 1, The main pixel, A plurality of gate lines formed on the first substrate and data lines insulated from and intersecting the gate lines; A plurality of thin film transistors formed at intersections of the gate lines and the data lines, and pixel electrodes electrically connected to the thin film transistors and having substantially the same area; A first sensing line extending in a direction parallel to the gate line; A second sensing line crossing the first sensing line and extending in a direction parallel to the date line; A first sensing electrode electrically connected to the first sensing line; And a second sensing electrode electrically connected to the second sensing line. The method of claim 3, The first sensing line extends to the cell gap region, And the stepped portion is formed by the first sensing line extending into the cell gap region. The method of claim 3, And the stepped portion is formed of a semiconductor layer and data lines formed through one photolithography process. The method according to claim 4 or 5, The height of the step portion is a display device, characterized in that about 2500 to 3500Å. The method according to claim 4 or 5, The main pixel, A common electrode formed on the first substrate; A storage electrode line crossing the main pixel and formed in parallel with the gate line; And a third sensing electrode extending from the sustain electrode line to the sensing region. The method of claim 7, wherein And a floating electrode layer formed on the cell gap spacer and the sensing spacer. The method according to claim 4 or 5, And a common electrode formed on the sensing spacer and the cell gap spacer. In the manufacturing method of the display device, Providing a second substrate having cell gap spacers and sensing spacers having substantially the same height; And providing a first substrate having a cell gap region having a predetermined stepped portion in a portion corresponding to the cell gap spacer. The method of claim 10, And forming a contact metal layer on the cell gap spacer and the sensing spacer. The method of claim 10, Preparing the first substrate, A gate line forming step of forming a gate line extending in a predetermined direction and a first sensing line parallel to the gate line; And the stepped portion is formed on the same layer as the gate line and the first sensing line including the gate line. The method of claim 10, Preparing the first substrate, Forming a gate insulating layer on the gate wiring; And forming the stepped portion having a semiconductor layer and a data line through a photolithography process using a photosensitive film pattern on the gate insulating layer. The method according to claim 12 or 13, The height of the step portion manufacturing method of a display device, characterized in that about 2500 to 3500Å.

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