KR20080032963A - Substrate treating apparatus and method - Google Patents

Abstract

A substrate processing apparatus and method are provided to prevent contamination of equipment due to residual gas by measuring gas acidity within a housing. A loading/unloading unit loads or unloads a cassette for receiving a plurality of substrates. A process treatment unit includes at least one process chamber for performing a substrate treatment process. A substrate transfer unit transfers the substrates between the loading/unloading unit and the process treatment unit. An acidity control member is used for controlling air acidity within the substrate transfer unit. The substrate transfer unit includes an EFEM(Equipment Front End Module)(22) for transferring the substrates from the cassette loaded in the loading/unloading unit, a load lock chamber(24) arranged nearly to the EFEM, and a transfer chamber for transferring the substrates between the load lock chamber and the process chamber. The acidity control member is formed at the EFEM to control the air acidity within the EFEM.

Description

Substrate Processing Apparatus and Method {SUBSTRATE TREATING APPARATUS AND METHOD}

1 is a configuration diagram of a substrate processing apparatus according to the present invention.

FIG. 2 is a cross-sectional view taken along the line A-A 'shown in FIG. 1.

3 is a flowchart showing a substrate processing method according to the present invention.

* Description of symbols on the main parts of the drawings *

1: substrate processing apparatus

10: loading / unloading unit

20: substrate transfer unit

30: processing part

40: residual gas exhaust

100: acidity control member

The present invention relates to a substrate processing apparatus and method, and more particularly, to an apparatus and method for processing a semiconductor substrate therein.

The process of processing a semiconductor substrate is performed by a plurality of substrate processing apparatuses that perform processes such as etching, chemical vapor deposition, plasma treatment, exposure, development, and cleaning on a semiconductor wafer. Usually, in a substrate processing process, wafers are transferred between respective devices by a wafer storage container such as a cassette, and each device performs the above-described substrate processing processes on wafers transferred from the storage container.

Here, a plurality of process gases are used in the process of performing the substrate treatment process. That is, in the semiconductor manufacturing process, various kinds of processing gases, such as active gases such as etching gas, deposition gas, and plasma generating gas, and other inert gases, are used. However, the processing gases used in the process remain on the wafer, and these residual gases serve as sources of contamination that contaminate the substrate processing apparatuses.

For example, a general multi-chamber plasma etching apparatus includes a loading / unloading member having a load port for seating a cassette during a process, and a facility front termination module for transferring wafers from the cassette. EFEM: Equipment front end module (hereinafter referred to as "FPM"), a load-lock chamber installed adjacent to FM, and a transfer chamber for transferring wafers between the loadlock chamber and the process chamber. It is provided.

The plasma etching apparatus having the above-described configuration performs a plasma etching process in each process chamber during the process. At this time, the above-described processing gases are injected onto the wafer in the process chamber, and the injected etching gas etches the thin film to be removed from the wafer surface. However, this process gas remains around the wafer at relatively low temperatures. Therefore, when the wafer is taken out from the process chamber after the etching process is completed, the residual gas around the wafer flows into the apparatus for transferring substrates such as transfer chamber, RF, load lock chamber, etc. Contaminate attachments such as robot arms. If the devices are contaminated by residual gas, malfunctions occur in the processing of the devices, thereby lowering the facility utilization rate, and contaminating the wafer surface again in the process of transferring the wafers, thereby lowering the process yield.

SUMMARY OF THE INVENTION In order to solve the above problems, an object of the present invention is to provide a substrate processing apparatus and method for preventing contamination of a facility by gas remaining around a wafer. In particular, it is an object of the present invention to provide a substrate processing apparatus and method for preventing a substrate transfer part performing a process of transferring a substrate from being contaminated due to the inflow of gas remaining around the substrate.

A substrate processing apparatus according to the present invention for achieving the above object is a process comprising a loading / unloading unit for loading and unloading a cassette containing a plurality of substrates, and at least one process chamber for performing a substrate processing process It includes a processing unit, a substrate transfer unit for transferring the substrate between the loading / unloading unit and the process processing unit, and an acidity control member for adjusting the acidity of the air in the substrate transfer unit.

According to an embodiment of the present invention, the substrate transfer unit is EMPE for transferring the substrate to / from the cassette seated in the loading / unloading unit, a load lock chamber disposed adjacent to the EMP, and the load lock chamber and It includes a transfer chamber for transferring the substrate between the process chamber, wherein the acidity control member is provided in the EMP to control the acidity of the air in the EMP.

According to an embodiment of the present invention, the acidity control member is a discharge member for discharging the air in the EEPM outside the EPM, an acidity meter for measuring the acidity of the air in the EPM, and the acidity measured by the acidity meter And a control unit for determining whether the value is out of a predetermined acidity value and adjusting the air displacement of the discharge member.

According to an embodiment of the present invention, the discharge member includes an inlet member for introducing external air into the EEPM and the outlet member for outflowing the air in the EEPM from the EMP, the controller is the acidity meter When the measured acidity value is higher than the predetermined acidity value, the air inflow amount of the inflow member and the air outflow amount of the outflow member are increased.

According to an embodiment of the present invention, at least one of the inflow member and the outflow member includes at least one fan, and the controller controls the inflow and discharge of the air by adjusting the rotational speed of the fan.

According to an embodiment of the present invention, the substrate processing apparatus further includes a residual gas exhaust member disposed adjacent to the EMP to remove the gas remaining on the substrate from the substrate, and the EMP transfers the substrate therein. A housing for providing a space, at least one robot arm for transferring the semiconductor substrate therein, and an opening and closing member for opening and closing the substrate entrance and exit of the substrate between the gas removal member and the housing, An acidity meter is installed adjacent to the substrate entrance.

In the substrate processing method according to the present invention for achieving the above object, the acidity measured by measuring the acidity of the air in the substrate transfer unit for transferring the substrate between the process chamber in which the substrate processing process is performed and the cassette containing a plurality of substrates The discharge of air in the housing is adjusted according to the value.

According to an embodiment of the present invention, the substrate transfer part transfers a substrate to / from the cassette, a load lock chamber installed adjacent to the ECU, and a substrate transfer between the load lock chamber and the process chamber. And a transfer chamber configured to change the rotational speed of at least one of a first fan for introducing external air into the EEPM and a second fan for discharging air in the EEPM to the outside. .

According to an embodiment of the present invention, the air emission control may increase the rotational speed of at least one of the first fan and the second fan when the acidity value of the air in the EMP is higher than a predetermined acidity value.

According to an embodiment of the present invention, the measurement of the acidity is installed adjacent to the EEPEM and the EMPE to receive the substrate from the EMPEM to remove the gas remaining around the substrate of the substrate between the substrate It is measured at the point adjacent to the board entrance where the entry and exit is made.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the present invention is not limited to the embodiments described herein but may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosure may be made thorough and complete, and to fully convey the spirit of the invention to those skilled in the art. Portions denoted by like reference numerals denote like elements throughout the specification.

In addition, in the present embodiment, a multi-chamber plasma etching apparatus of the substrate processing apparatus has been described as an example, but the present invention may be applied to an apparatus for processing various kinds of substrates.

(Example)

1 is a configuration diagram of a substrate processing apparatus according to the present invention, and FIG. 2 is a cross-sectional view taken along a line A-A 'shown in FIG. 1. 1 and 2, the substrate treating apparatus 1 according to the present invention includes a loading / unloading member 10 and a substrate transfer member 20. , A process treating member 30, a remaining-gas exhaust member 40, and an acidity control member 100.

The loading / unloading unit 10 includes at least one load port 12 in which a cassette C for accommodating a plurality of substrates W is loaded and unloaded. Each load port 12 is disposed adjacent to the substrate transfer part 20 and seats the cassette C during the process.

The substrate transfer unit 20 transfers the substrate W between the loading / unloading unit 10, the process processing unit 30, and the residual gas exhaust unit 40 during the process. The substrate transfer unit 20 includes an equipment front end module (EFEM) 22, a load-lock chamber 24, and a transfer chamber 26. ). The EMP 22 transfers the substrates W between the cassette C and the load lock chamber 24 seated in the load port 12 during the process. The YMP 22 includes a housing 22a, a substrate transfer unit 22b, and a door 22c. The housing 22a provides a space for processing the transfer of the substrate W therein. The substrate transfer unit 22b transfers the substrate W. As shown in FIG. At least one substrate transfer unit 22b is installed in the housing 22a. The substrate transfer unit 22b transfers the substrate W between the cassette C and the load lock chamber 24 seated at each load port 12 during the process. In addition, the substrate transfer unit 22b transfers and conveys the substrate W to / from the residual gas exhaust unit 40.

The load lock chamber 24 performs an interface function of transferring the substrates W between the ELF 22 and the transfer chamber 26. The load lock chamber 24 includes a first chamber 24a and a second chamber 24b. The first chamber 24a is a chamber that transfers the substrate W from the YEPM 22 to the transfer chamber 26, and the second chamber 24b is a substrate (Y) from the transfer chamber 26 to the YEPM 22. It is a chamber which conveys W).

The transfer chamber 26 transfers the substrates W between the load lock chamber 24 and the process processor 30. The transfer chamber 26 has at least one robotic arm 26a. The robot arm 26a transfers the substrate W between the process chambers 32 and the load lock chamber 24 of the process processor 30.

The process processor 30 performs a predetermined substrate treatment process on the substrate W transferred from the substrate transfer unit 20. The process processor 30 includes at least one process chamber 32. The process chamber 32 provides a space therein for performing a substrate processing process. In one embodiment, the substrate processing process is a plasma etching process. Therefore, the process chamber 32 loads the sheet of substrate W into the chamber during the process, and sprays the reaction gases such as the etching gas and the processing gases such as the inert gas such as the nitrogen gas toward the loaded substrate W. By etching the thin film to be removed from the substrate (W).

The residual gas exhaust unit 40 removes a gas (hereinafter, referred to as "residual gas") remaining around the substrate W on which the substrate processing process is completed, from the substrate W. In one embodiment, the residual gas exhaust unit 40 is installed adjacent to the EMP 22 of the substrate transfer unit 20. A substrate entrance 2 is provided between the residual gas exhaust 40 and the EMP 22 to allow the substrate W to enter and exit from each other. The substrate entrance 2 is opened and closed by the opening and closing member 22c.

In the present embodiment, a method in which one residual gas exhaust unit 40 is provided on the EMP 22 of the substrate transfer unit 20 is described as an example, but the arrangement and number of the residual gas exhaust units 40 may be variously applied. This is possible. For example, as another embodiment of the present invention, the residual gas exhaust portion 40 is provided adjacent to the transfer chamber 26 of the substrate transfer portion 20. Therefore, in the process, the residual gas exhaust unit 40 receives the substrate W on which the substrate processing process is completed from the robot arm 26a of the transfer chamber 26, and exhausts the gas remaining around the substrate W. Alternatively, as another embodiment of the present invention, the residual gas exhaust unit 40 may be provided in both the EPM 22 and the transfer chamber 26.

The acidity control member 100 adjusts the acidity in the IFM 22 during the process. The acidity control member 100 includes an exhaust member, an acidity detector 130, and a control member 140. The discharge member includes an inflow member 110 and an outflow member 120. The inflow member 110 inflows external air into the EMP22 during the process, and the outlet member 120 outflows the air in the EMP22 to the outside. Therefore, the air in the EMP 22 is continuously circulated by the discharge member.

The inflow member 110 is installed on the upper ceiling of the housing 22a of the ELF 22, and the outflow member 120 is installed on the bottom bottom of the housing 22a. The inflow member 110 includes a first fan 112 and a first driving part 114. At least one first fan 112 is provided. The first fan 112 is installed to be rotatable in the upper portion of the housing 22a. The first driver 114 rotates the first fan 112 so that the outside air of the housing 22a flows into the housing 22a by the first fan 112. A filter (not shown) may be provided between the first fan 112 and the space in the housing 22a to filter foreign matter in the air. The outlet member 120 includes a second fan 112 and a second driving part 114. The second fan 122 is installed to be rotatable under the housing 22a. The second driver 124 rotates the second fan 122 to allow air in the housing 22a to flow out of the housing 22a by the second fan 122.

The acidity meter 130 measures the acidity of the air inside the housing 22a. This is to measure whether the gas remaining on the substrate W after the substrate treatment process is generally acidic, so that the residual gas leaked into the housing 22a using the acidity meter 130. In particular, since the acidic gas acts as a oxidizing and corrosive action of the device, it is a major cause of error in the operation of the device for transporting the substrate (W). However, if the gas to be measured has a property other than acid (eg basic), it is natural to use a measuring device capable of measuring the property.

At least one acidity meter 130 is installed in the housing 22a. At this time, it is preferable that the acidity meter 130 is installed at a position where it is easy to detect the residual gas in the ELF 22. For example, the acidity meter 130 is preferably installed adjacent to the substrate entrance (2). This is to effectively detect the residual gas around the substrate W that is not removed by the residual gas exhaust member 40 when carried out from the residual gas exhaust member 40 to the EMP22 in the process.

In the present embodiment has been described as an example where the acidity meter 130 is installed in a position adjacent to the substrate entrance 2 as a preferred installation position, the acidity meter 130 can be installed in various locations. In addition, a plurality of acidity meter 130 may be installed in a variety of areas in the EMP (22).

In addition, in this embodiment, the acidity meter 130 was used to measure the inflow of residual gas into the housing 22a, but whether the residual gas is introduced into the housing 22a can be performed using various apparatuses. Can be. For example, the presence or absence of residual gas in the housing 22a can be measured using a predetermined sensing device capable of measuring the presence or absence of a specific gas.

In addition, in the present embodiment, since the acidity meter 130 measures the presence or absence of residual gas that is not removed by the residual gas removing member 40, the residual gas removing member 40 is a device other than the EMP 40. If installed adjacent to, the acidity meter 130 is provided in the device provided with the residual gas removing member 40. That is, if the residual gas removing member 40 is installed adjacent to the transfer chamber 26, the acidity meter 130 is preferably provided in the transfer chamber 26 to measure the acidity of the air in the transfer chamber 26. .

The controller 140 controls the substrate processing process described above. In particular, the controller 140 controls the acidity adjusting member 100. A detailed process of controlling the acidity control member 100 by the controller 50 will be described later.

Hereinafter, the process of the substrate processing apparatus 1 having the above-described configuration will be described in detail. Here, the same reference numerals for the same components as the above-described components are the same, and detailed description of the components is omitted.

3 is a flowchart showing a substrate processing method according to the present invention. Referring to FIG. 3, when a process of the substrate processing apparatus 1 is started, a cassette C having a plurality of semiconductor substrates W stored therein is loaded into the load port 12 of the loading / unloading unit 10. It is loaded (S110). Then, the substrate transfer unit 20 sequentially transfers the substrates W from the cassette C seated on the loading / unloading unit 10 to the process processing unit 30 (S120). That is, the substrate transfer unit 22a of the EMP 22 transfers the substrate W from the cassette C to the first chamber 24a of the load lock chamber 24, and the robot arm of the transfer chamber 26. Reference numeral 26a transfers the substrate W from the first chamber 24a to the process chamber 32.

The process chamber 32 performs a substrate treatment process on the substrates W sequentially transferred (S130). That is, in one embodiment, each process chamber 32, when the substrate (W) is loaded therein, generates a plasma and etch the thin film on the substrate (W) to be removed by spraying the processing gas. When the plasma etching process is completed, the robot arm 26a of the transfer chamber 26 is transferred from the process chamber 32 to the second chamber 24b of the load lock chamber 24, and the substrate transfer of the EMP 22 is carried out. The unit 22a transfers the substrate W from the second chamber 24b to the residual gas exhaust member 40 (S140). When the substrate W is loaded into the residual gas exhaust unit 40, the residual gas exhaust member 40 removes the gas remaining around the substrate W (S150).

When the residual gas is exhausted for a predetermined time, the substrate W is moved from the residual gas exhaust part 40 to the YF 22 through the substrate entrance 2 and then loaded into the loading / unloading part 10. It is carried out to the cassette C (S160). At this time, since the acidity meter 130 of the acidity control member 100 continuously measures the acidity in the ELF 22, if the gas remaining on the substrate W by the residual gas exhaust unit 40 is completely If not removed, the gas remaining in the substrate W flows from the residual gas exhaust portion 40 to the EMP 22 to increase the acidity in the EMP 22. Therefore, the controller 50 determines whether or not the residual gas in the YPM 22 is introduced by determining whether the acidity value measured by the acidity meter 130 satisfies the preset acidity value (S170).

If the acidity value measured by the acidity meter 130 is out of the predetermined acidity value, the controller 50 adjusts the discharge amount of air in the EMP22. That is, when the acidity value exceeds the preset acidity value, the controller 50 may rotate at least one of the first fan 112 of the inflow member 110 and the second fan 122 of the outflow member 120. Increase the amount of air in the EMP (22) by increasing the. Therefore, the residual gas introduced into the EMP22 is effectively discharged from the EMP22 by the forced air flow in the housing 22a by the first fan 112 and the second fan 122. Then, when the residual gas in the EMP 22 is discharged and the acidity value is lowered below the predetermined acidity value, the controller 50 increases the rotation speed of the first fan 112 and the second fan 122. Adjust the rotation speed at normal speed.

As described above, the above-described substrate processing apparatus and method detects that the gas remaining around the substrate W flows into the substrate transfer unit 20 to increase the acidity value in the substrate transfer unit 20, thereby increasing the substrate transfer unit 20. By increasing the exhaust volume of the air in the cavity), the residual gas is effectively discharged from the substrate transfer section 20, thereby preventing contamination of the substrate transfer section 20 by the residual gas. Therefore, the substrate processing apparatus and method according to the present invention prevents the gas remaining around the substrate W from contaminating the apparatus for performing subsequent processes after the substrate processing process is completed in the process chamber.

The foregoing detailed description illustrates the present invention. In addition, the foregoing description merely shows and describes preferred embodiments of the present invention, and the present invention can be used in various other combinations, modifications, and environments. That is, changes or modifications may be made within the scope of the concept of the invention disclosed in this specification, the scope equivalent to the disclosed contents, and / or the skill or knowledge in the art. The above-described embodiments are intended to illustrate the best state in carrying out the present invention, the use of other inventions such as the present invention in other state known in the art, and the specific fields of application and uses of the present invention. Various changes are also possible. Accordingly, the detailed description of the invention is not intended to limit the invention to the disclosed embodiments. Also, the appended claims should be construed to include other embodiments.

As described above, the substrate processing apparatus and method according to the present invention prevent the equipment from being contaminated by the gas remaining on the substrate. In particular, the substrate processing apparatus and method according to the present invention measures the acidity of the gas in the housing for performing the substrate processing process and adjusts the exhaust amount of the gas according to the measured change in the acidity value. Prevent contamination

In addition, the substrate processing apparatus and method according to the present invention effectively exhausts the gas remaining on the substrate during the substrate processing process to prevent contamination of the equipment. In particular, in the process of processing the substrate, the substrate transfer portion transferring the substrate between the storage container housing the plurality of substrates and the process chamber prevents the substrate transfer portion from being contaminated by the gas remaining on the substrate.

Claims (10)

In the apparatus for processing a substrate, A loading / unloading unit for loading and unloading a cassette containing a plurality of substrates; A process processing unit including at least one process chamber performing a substrate processing process; A substrate transfer unit for transferring a substrate between the loading / unloading unit and the process processing unit; And an acidity adjusting member for adjusting the acidity of air in the substrate transfer part. The method of claim 1, The substrate transfer unit, An EMP for transferring a substrate to / from a cassette seated in the loading / unloading unit; A load lock chamber disposed adjacent to the EMP; A transfer chamber for transferring a substrate between the load lock chamber and the process chamber, The acidity control member, The substrate processing apparatus of claim 2, wherein the EMP is provided to control the acidity of the air in the EMP. The method of claim 2, The acidity control member, A discharge member for discharging the air in the EMP to the outside of the EMP, An acidity meter for measuring the acidity of the air in the EMF, and And a controller configured to determine whether the acidity value measured by the acidity meter deviates from a predetermined acidity value and adjust the air displacement of the discharge member. The method of claim 2 or 3, The discharge member, An inlet member for introducing external air into the EFM; It includes an outlet member for outflowing the air in the EMP from the EMP, The control unit, And when the acidity value measured by the acidity meter is higher than a predetermined acidity value, increasing the air inflow amount of the inflow member and the air outflow amount of the outflow member. The method of claim 4, wherein At least one of the inflow member and the outflow member, With at least one fan, The control unit, Substrate processing apparatus, characterized in that for adjusting the rotational speed of the fan. The method of claim 5, wherein The substrate processing apparatus, A residual gas exhaust member disposed adjacent to the EEPM to remove gas remaining on the substrate from the substrate, The EMP is, A housing providing a space for transferring the substrate therein; At least one robotic arm for transferring the semiconductor substrate therein, and It includes an opening and closing member for opening and closing the substrate entrance and exit of the substrate between the gas removal member and the housing, The acidity meter, And a substrate processing apparatus installed adjacent to the substrate entrance and exit. In the method of processing a substrate, Characterized in that the acidity of the air in the substrate transfer unit for transporting the substrate between the process chamber and the cassette containing a plurality of substrates to process the substrate processing process, characterized in that to control the discharge of air in the housing according to the measured acidity value Substrate processing method. The method of claim 7, wherein The substrate transfer unit, An EPM for transferring a substrate to / from the cassette, a load lock chamber installed adjacent to the EMP, and a transfer chamber for transferring a substrate between the load lock chamber and the process chamber, The discharge control of the air, And a rotation speed of at least one of a first fan that introduces outside air into the YEPM and a second fan that flows out the air in the YEPM to the outside. The method of claim 8, The discharge control of the air, And if the acidity value of the air in the e-EM is higher than a predetermined acidity value, increasing the rotation speed of at least one of the first fan and the second fan. The method of claim 9, The measurement of the acidity, It is measured at a point adjacent to the substrate entrance through which the entrance and exit of the substrate between each other is installed adjacent to the EMP and the EMP and the residual gas removing member for removing the gas remaining around the substrate by receiving the substrate from the EFP Substrate processing method.

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