KR20080027200A - Method of patterning an anti-reflective coating by partial etching - Google Patents

Abstract

A method for patterning an anti-reflective coating by partial etching is provided to enhance reliability by reducing possibility of damage in an underlying layer. A layer stack is provided on a substrate(210). The layer stack consists of a thin film(220) formed on the substrate, an ARC(Anti-Reflective Coating) layer formed on the thin film, and a mask layer formed on the ARC layer. A pattern is formed on the mask layer. The pattern is transferred partially on the ARC layer by transferring the pattern to a depth less than the thickness of the ARC layer. The remaining part of the mask layer is removed. The pattern is completed by etching the ARC layer. The pattern is transferred to the thin film by consuming substantially the ARC layer.

Description

METHOD OF PATTERNING AN ANTI-REFLECTIVE COATING BY PARTIAL ETCHING}

(Cross reference to related application)

This application is filed on the same date as this and filed on the same date as "METHOD FOR DOUBLE IMAGING A DEVELOPABLE ANTI-REFLECTIVE COATING" (TTCA-157), co-pending US Patent Application No. 11 / 534,261. Pending U.S. Patent Application No. 11 / 534,365, entitled "METHOD FOR DOUBLE PATTERNING A DEVELOPABLE ANTI-REFLECTIVE COATING" (TTCA-158) and co-pending U.S. Patent Application No. 11 / XXX, XXX "METHOD OF PATTERNING A DEVELOPABLE ANTI-REFLECTIVE COATING BY PARTIAL DEVELOPING" (TTCA-160) and co-pending US patent application No. 11 / XXX, XXX, "METHOD FOR DOUBLE PATTERNING A THIN" FILM "(TTCA-161). The entire contents of these applications are hereby incorporated by reference in their entirety.

The present invention relates to a method for patterning a thin film on a substrate, and more particularly, to a method for patterning a thin film on a substrate using a partially etched anti-reflective coating (ARC) layer.

In material processing methods, pattern etching applies a thin film of photosensitive material, such as photoresist, to a top surface of a subsequently patterned substrate, thereby transferring the pattern to an underlying thin film on the substrate during etching. Providing a mask to do so. Patterning of the photosensitive material generally involves exposure with a radiation source through a reticle (and associated optics) of the photosensitive material, for example using a photolithography system, followed by irradiated areas of the photosensitive material with a developer (positive photoresist). ), Or removal of non-irradiated regions (as in the case of negative resist). In addition, this mask layer may comprise multiple sub-layers.

Once the pattern is transferred to the underlying thin film, it is essential to remove the mask layer without compromising the material properties of the underlying thin film. For example, the thin film can be a low dielectric constant (low-k or ultra-low-k) that may be used in back-end-of-line (BEOL) metallization methods for electronic devices. k)) a dielectric film may be included. These materials, which may include not only porous low k dielectrics, but also nonporous low k dielectrics, are damaged, such as a drop in dielectric constant, when exposed to chemicals essential for the removal of the mask layer and its sublayers. It is susceptible to damages such as water absorption and residue formation. Therefore, when creating such a pattern and removing the necessary mask layer (s), it is important to establish a pattern transfer method that reduces the possibility of damaging the underlying thin film.

The present invention relates to a method for patterning a thin film on a substrate.

According to one embodiment, a method of patterning a thin film using an anti-reflective coating (ARC) layer is described. The pattern formed on the mask layer covering the ARC layer is partially transferred to the ARC layer, and then the mask layer is removed. The pattern is then completely transferred to the ARC layer using an etching process.

According to another embodiment, a method comprising: providing a film stack on a substrate, the film stack comprising a thin film formed on the substrate, a semi-reflective coating (ARC) layer formed on the thin film, and a mask layer formed on the ARC layer; Forming a pattern on the mask layer; Partially transferring the pattern to the ARC layer by transferring the pattern to a depth less than the thickness of the ARC layer; Subsequent to partial transfer of the pattern to the ARC layer, removing remaining portions of the mask layer; Completing transferring the pattern to the ARC layer by etching the ARC layer; And transferring the pattern to the thin film while substantially consuming the ARC layer, a method of patterning a thin film on a substrate, and a computer recording medium for patterning are described.

The present invention relates to a method for patterning a thin film on a substrate using a partially etched semi-reflective coating layer, according to the present invention, when forming a pattern and removing the necessary mask layer (s), A pattern transfer method can be obtained that reduces the chance of damage.

In the following description, for purposes of explanation (but not limitation), specific details such as specific processes and patterning systems are described. However, it should be understood that the invention may be practiced in other embodiments that depart from these specific details.

Referring now to the drawings in which like reference numerals represent the same or corresponding parts throughout the several views, FIGS. 1A-1J schematically illustrate a method of patterning a substrate according to the prior art. As shown in FIG. 1A, lithographic structure 100 includes a film stack formed on substrate 110. The film stack is formed on a thin film 120, such as a dielectric layer, on an organic planarization layer (OPL) 130 formed on the thin film 120, on the OPL 130. A formed anti-reflective coating (ARC) layer 140, and a photoresist layer 150 formed on the ARC layer 140.

As shown in FIG. 1B, the photoresist layer 150 is exposed to the first image pattern 152 using a photolithography system, and then as shown in FIG. 1C, the first image pattern 152 is a developer. And the first pattern 154 is formed in the photoresist layer 150. First pattern 154 in photoresist layer 150 is transferred to underlying ARC layer 140 using a dry etching process to form first ARC pattern 142 as shown in FIG. 1D. .

Now, as shown in FIG. 1E, the photoresist layer 150 is removed and the second photoresist layer 160 is applied to the ARC layer 140. The second photoresist layer 160 is exposed to the second image pattern 162 using a photolithography system, as shown in FIG. 1F, and then, as shown in FIG. 1G, as shown in FIG. 1G. 162 is developed with a developer to form a second pattern 164 on the second photoresist layer 160. The second pattern 164 in the second photoresist layer 160 is transferred to the underlying ARC layer 140 using an etching process to form the second ARC pattern 144 as shown in FIG. 1H.

As shown in FIGS. 1I and 1J, respectively, the second photoresist layer 160 is removed. The first and second ARC patterns 142 and 144 are transferred to the underlying OPL 130 and the thin film 120 using one or more etching processes to form the first and second feature patterns 122 and 124. To form. However, as shown in FIG. 1J, once the pattern transfer to the thin film 120 is complete, the ARC layer 140 is only partially consumed, thus leaving material to be removed, in addition to the remaining OPL. We have observed that processes such as flash etching, which are required to remove the remaining ARC layer, are detrimental to the material characteristics of the underlying thin film 120.

For example, thin film 120 may include a low dielectric constant (low k or extremely low k) dielectric film that may be used in a BEOL metallization method for electronic devices. These materials, which may include not only porous low k dielectrics but also nonporous low k dielectrics, are damaged when exposed to chemicals that are essential for the removal of ARC layer 140, such as a drop in dielectric constant, moisture, It is susceptible to damage such as absorption and residue formation.

One option is to reduce the thickness of the ARC layer 140, whereby this layer is substantially consumed during the transfer of the pattern to the thin film 120. However, the thickness of the ARC layer 140 is specified by the requirements set to provide anti-reflective properties during the patterning of the photoresist layer. For example, if the ARC layer 140 is configured to cause destructive interference between incident electromagnetic (EM) radiation and reflected EM radiation, the thickness τ of the ARC layer 140 is incident during imaging of the photoresist layer. Should be chosen to be a quarter wavelength of the EM radiation (ie, τ˜λ / 4, 3λ / 4, 5λ / 4, etc.). Or, for example, if the ARC layer is configured to absorb incident EM radiation, the thickness τ of the ARC layer 140 should be selected to be thick enough to allow absorption of incident EM radiation. In other cases, the inventors have observed that the minimum thickness required to provide anti-reflective features still only partially consumes the ARC layer after transfer of the pattern to the underlying thin film.

Therefore, according to an embodiment of the present invention, a method of patterning a substrate is shown in FIGS. 2A-2K and 3. The method is shown in flowchart 500 and begins at 510 with forming a lithographic structure 200 comprising a film stack formed on a substrate 210. The film stack includes a thin film 220 formed on the substrate 210, an optional organic planarization layer (OPL) 230 formed on the thin film 220, and / or an OPL 230. ), A semi-reflective coating (ARC) layer 240 formed on the thin film 220, and a photoresist layer 250 formed on the ARC layer 240. Although the film stack is shown formed directly over the substrate 210, additional layers may exist between the film stack and the substrate 210. For example, in a semiconductor device, the film stack may facilitate the formation of one interconnect level, which may be formed on another interconnect level on the substrate 210. In addition, the thin film 220 may include a single material layer or a plurality of material layers. For example, the thin film 220 may include a bulk material layer having a capping layer.

The thin film 220 may include a conductive layer, a nonconductive layer, or a semiconductive layer. For example, the thin film 220 may include metals, metal oxides, metal nitrides, metal oxynitrides, metal silicates, metal silicides, silicon, polycrystalline silicon (polysilicon), doped silicon, silicon dioxide, silicon nitride, silicon carbide, silicon acid It may also include a material layer containing nitride or the like. Also, for example, thin film 220 may have a low dielectric constant having a nominal dielectric constant value that is less than the dielectric constant of SiO ₂ (eg, the dielectric constant for thermal silicon dioxide may range from 3.8 to 3.9). That is, low k) or extremely low dielectric constants (i.e., extremely low k). More specifically, the thin film 220 may have a dielectric constant of 3.7 or less, such as a dielectric constant in the range of 1.6 to 3.7.

CVD 유기규산염 유리(organosilicate glass, OSG)막들 또는 Novellus Systems, Inc.로부터 시판되는 Coral

CVD 막들을 포함한다. 또는, 이들 유전체층들은, 작은 공동들(또는 구멍들)을 생성하기 위하여 경화 또는 증착 프로세스 동안 막의 완전 치밀화(densification)를 방해하는 CH₃ 결합을 갖는 실리콘 산화물 기저 매트릭스와 같은 단일 상으로 구성된 다공성의 무기-유기 하이브리드 막들을 포함할 수도 있다. 또는, 이들 유전체층들은, 경화 프로세스 동안 분해되어 증발된 유기 재료(예컨대, 포로젠)의 구멍들을 갖는 탄소 도핑된 실리콘 산화물 기저 매트릭스와 같은, 적어도 2 상들로 구성된 다공성의 무기-유기 하드브리드 막들을 포함할 수도 있다. 또는, 이들 유전체층들은, SOD(spin-on dielectric) 기술들을 사용하여 증착된, 수소 실세스퀴옥산(HSQ) 또는 금속 실세스퀴옥산(MSQ)과 같은, 무기의 규산염 기저 재료를 포함할 수도 있다. 이러한 막들의 예는, Dow Corning으로부터 시판되는 FOx

HSQ, Dow Corning으로부터 시판되는 XLK 다공성 HSQ, 및 JSR Microelectonics로부터 시판되는 JSR LKD-5109를 포함한다. 또는, 이들 유전체층들은 SDO 기술들을 이용하여 증착된 유기 재료를 포함할 수 있다. 이러한 막들의 예는 Dow Chemical로부터 시판되는 SiLK-I, SiLK-J, SiLK-H, SiLK-D 및 다공성의 SiLK

반도체 유전체 수지, 및 Honeywell로부터 시판되는 GX-3P^TM 및 GX-3P^TM 반도체 유전체 수지를 포함한다.These dielectric layers may comprise at least one of an organic, inorganic or inorganic-organic hybrid material. In addition, these dielectric layers may be porous or nonporous. For example, these dielectric layers may include an inorganic silicate based material such as carbon doped silicon oxide (or organo siloxane) deposited using CVD techniques. Examples of such films are Black Diamond, commercially available from Applied Materials, Inc.

CVD organosilicate glass (OSG) films or Coral commercially available from Novellus Systems, Inc.

CVD films. Alternatively, these dielectric layers may be porous inorganics composed of a single phase such as a silicon oxide base matrix with CH ₃ bonds that interfere with the complete densification of the film during the curing or deposition process to create small cavities (or holes). May comprise organic hybrid membranes. Alternatively, these dielectric layers include porous inorganic-organic hardbrid films composed of at least two phases, such as a carbon doped silicon oxide base matrix with pores of organic material (e.g., porogen) that has been decomposed and evaporated during the curing process. You may. Alternatively, these dielectric layers may include an inorganic silicate based material, such as hydrogen silsesquioxane (HSQ) or metal silsesquioxane (MSQ), deposited using spin-on dielectric (SOD) techniques. . An example of such films is FOx, commercially available from Dow Corning.

HSQ, XLK porous HSQ commercially available from Dow Corning, and JSR LKD-5109 commercially available from JSR Microelectonics. Alternatively, these dielectric layers may include an organic material deposited using SDO techniques. Examples of such films are SiLK-I, SiLK-J, SiLK-H, SiLK-D and porous SiLK available from Dow Chemical.

Semiconductor dielectric resins, and GX-3P ^™ and GX-3P ^™ semiconductor dielectric resins available from Honeywell.

The thin film 220 may include chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (ALD), plasma enhanced ALD (PEALD), physical vapor deposition (PVD), or ionized PVD (iPVD). Such as vapor deposition techniques, or spin-on techniques such as those provided by Clean Track ACT 8 SOD (spin-on dielectric), ACT 12 SOD, and Lithius coating systems available from Tokyo Electron Limited (TEL). have. The Clean Track ACT 8 (200 mm), ACT 12 (300 mm), and Lithius (300 mm) coating systems provide coating, baking and curing tools for SOD materials. The track system can be configured to process substrate sizes of 100 mm, 200 mm, 300 mm and more. Other systems and methods for forming thin films on substrates are well known to those skilled in the art of both spin-on and vapor deposition techniques.

Optional OPL 230 may comprise a photosensitive organic polymer or an etched organic composite. For example, the photosensitive organic polymer may be polyacrylate resin, epoxy resin, phenolic resin, polyamide resin, polyimide resin, unsaturated polyester resin, polyphenylene ether resin, polyphenylene sulfide resin, or benzocyclobutene (BCB) yl. It may be. These materials may be formed using spin-on techniques.

ARC layer 240 has material properties suitable for use as a semi-reflective coating. The ARC layer 240 may comprise an organic material or an inorganic material. For example, ARC layer 240 may be a structural formula of amorphous carbon (aC), a-FC, or R: C: H: X, where R is a group consisting of Si, Ge, B, Sn, Fe, Ti, and combinations thereof And X is absent or selected from the group consisting of one or more of O, N, S, and F). The ARC layer 240 can be fabricated to exhibit an optical range for an index of refraction of approximately 1.40 <n <2.60 and an extinction coefficient of approximately 0.01 <k <0.78. Alternatively, at least one of the index of refraction and extinction may be graded (or varied) along the thickness of the ARC layer 240. Additional details are US Pat. No. 6,316,167, assigned to International Business Machines Corporation, entitled " TUNABLE VAPOR DEPOSITED MATERIALS AS ANTIREFLECTIVE COATINGS, HARDMASKS AND AS COMBINED ANTIREFLECTIVE COATING / HARDMASKS AND METHODS OF FABRICATION THEREOF AND APP ", The entire contents of which are hereby incorporated by reference in their entirety.

ARC layer 240 may also be formed using vapor deposition techniques including chemical vapor deposition (CVD) and plasma enhanced CVD (PECVD). For example, ARC layer 240 is pending US patent application Ser. No. 10 / 644,958, filed on August 21, 2003, and entitled "METHOD AND APPARATUS FOR DEPOSITING MATERIALS WITH TUNABLE OPTICAL PROPERTIES AND ETCHING CHARACTERISTICS". As described in more detail in, it can be formed using PECVD, the patent application of which is used herein in its entirety. The optical properties of the ARC layer 240, such as refractive index, may be selected to substantially match the optical properties of the underlying layer or layers. For example, underlayers, such as nonporous dielectric films, may require achieving a refractive index in the range of 1.4 <n <2.6, while underlayers, such as porous dielectric films, achieve a refractive index in the range of 1.2 <n <2.6. It may cost you something to do.

The photoresist layer 250 may include 248 nm (nanometer) resist, 193 nm resist, 157 nm resist, or extreme ultraviolet (EUV) resist. Photoresist layer 250 may be formed using a track system. For example, the track system may include a Clean Track ACT 8, ACT 12 or Lithius resist coating and developing system available from Tokyo Electron Limited (TEL). Other systems and methods for forming a photoresist film on a substrate are well known to those skilled in the art of spin-on resist technology.

At 520 and as shown in FIGS. 2B and 2C, respectively, photoresist layer 250 is patterned and developed. As shown in FIG. 2B, photoresist layer 250 is imaged into image pattern 252 using a photolithography system. Exposure to EM radiation through the reticle is performed in a dry or wet photolithography system. The image pattern may be formed using any suitable conventional stepping lithography system or scanning lithography system. For example, a photolithography system may be commercially available from ASML Netherlands B.V. (De Run 6501, 5504 DR Veldhoven, The Netherlands), or Canon USA, Inc., Semiconductor Equipment Division (3300 North First Street, San Jose, CA 95134).

As shown in FIG. 2C, a developing process for removing the image pattern 252 and forming the mask pattern 254 in the photoresist layer 250 is performed on the exposed photoresist layer 250. The developing process may include exposing the substrate to a developing solution in a developing system such as a track system. For example, the track system may include a Clean Tack ACT 8, ACT 12 or Lithius resist coating and development system commercially available from Tokyo Electron Limited (TEL).

At 530 and as shown in FIG. 2D, mask pattern 254 is partially transferred to underlying ARC layer 240 to form ARC pattern 242. The ARC pattern 242 extends to a depth smaller than the thickness of the ARC layer 240. For example, mask pattern 254 may be partially transferred to underlying ARC layer 240 using an etching process such as a dry etching process or a wet etching process. Alternatively, for example, mask pattern 254 may be partially transferred to underlying ARC layer 240 using a dry plasma etch process or a dry non-plasma etch process. Or, for example, the mask pattern 254 may be formed by using an anisotropic dry etching process, a reactive ion etching process, a laser assisted etching process, an ion milling process, or an imprinting process or a combination of two or more thereof. 240 may be partially transferred.

At 540, photoresist layer 250 is removed. For example, photoresist layer 250 may be removed using a wet stripping process, a dry plasma ashing process, or a dry non-plasma ashing process. Thereafter, an optional second photoresist layer 260 is formed on the ARC layer 240, as shown in FIG. 2E.

The optional second photoresist layer 260 may include 248 nm (nanometer) resist, 193 nm resist, 157 nm resist, or extreme ultravolet (EUV) resist. An optional second photoresist layer 260 may be formed using a track system. For example, the track system may include a Clean Track ACT 8, ACT 12 or Lithius resist coating and developing system available from Tokyo Electron Limited (TEL). Other systems and methods for forming a photoresist film on a substrate are well known to those skilled in the art of spin-on resist technology.

As shown in FIGS. 2F and 2G, respectively, the optional second photoresist layer 260 is imaged with the optional second image pattern 262, and the exposed optional second photoresist layer 260, A developing process is performed to remove the optional second image pattern region and to form the optional second mask pattern 264 in the optional second photoresist layer 260.

As shown in FIG. 2H, an optional second mask pattern 264 is partially transferred to the underlying ARC layer 240 to form an optional second ARC pattern 244. The optional second ARC pattern 244 extends to a depth less than the thickness of the ARC layer 240. Thereafter, the optional second photoresist layer 260 is removed, as shown in FIG. 2I.

Other techniques may be utilized to form a double pattern, multiple patterns in the ARC layer 240 using a single layer of photoresist. For example, a single layer of photoresist may be double imaged and then removed after partial transfer to the underlying ARC layer of this double pattern. Or, for example, a single layer of photoresist may be imaged and developed, and these two steps may be repeated for the same layer of photoresist. Thereafter, the photoresist layer may be removed following partial transfer of this double pattern to the underlying ARC layer.

At 550 and as shown in FIG. 2J, the transfer of the ARC pattern 242 and the optional second ARC pattern 244 to the ARC layer 240 is complete while thinning the ARC layer 240. For example, the ARC pattern 242 and the optional second ARC pattern 244 may be substantially transferred through the thickness of the ARC layer 240 using an etching process, such as a dry etching process or a wet etching process. Or, for example, the etching process may include a dry plasma etching process or a dry non-plasma etching process. During the transfer of this ARC pattern 242 and the optional second ARC pattern 244 substantially through the ARC layer 240, the flat-field 246 is etched to form the ARC layer 240. The thickness is reduced.

At 560 and as shown in FIG. 2K, the ARC pattern 242 and the optional second ARC pattern 244 can be used to form the underlying OPL 230 (if present) and the thin film 220 using one or more etching processes. Transfer to form a feature pattern 222 and an optional second feature pattern 224. During one or more etching processes, ARC layer 240 is substantially consumed as shown in FIG. 2K. One or more etching processes may include any combination of wet or dry etching processes. Dry etching processes may include a dry plasma etching process or a dry non-plasma etching process. Thereafter, the OPL 230 (if present) may be removed.

Although only specific embodiments of the invention have been described in detail above, those skilled in the art will readily appreciate that many variations are possible in the embodiments without substantially departing from the novel teachings and advantages of the invention. For example, while some embodiments illustrate the use of positive tone developable resist and developable ARC layers, other embodiments using negative tone developable resist and developable ARC layers are also contemplated. Accordingly, all such modifications are intended to be included within the scope of this invention.

1A-1J schematically illustrate a known method for patterning a thin film on a substrate.

2A-2K schematically illustrate a method for patterning a thin film on a substrate in accordance with an embodiment of the invention.

3 is a flowchart of a method for patterning a thin film on a substrate in accordance with an embodiment of the present invention.

Claims (16)

As a method of patterning a thin film on a substrate, Providing a film stack on the substrate, the thin film formed on the substrate, an anti-reflective coating (ARC) layer formed on the thin film, and a mask layer formed on the ARC layer ; Forming a pattern on the mask layer; Partially transferring the pattern to the ARC layer by transferring the pattern to a depth less than the thickness of the ARC layer; Following the partial transfer of the pattern to the ARC layer, removing remaining portions of the mask layer; Completing transferring the pattern to the ARC layer by etching the ARC layer; And Transferring the pattern to the thin film while substantially consuming the ARC layer Including, the method of patterning a thin film on a substrate. 2. The method of claim 1, wherein forming a pattern in the mask layer comprises forming a pattern in the photoresist layer. The method of claim 2, wherein the forming of the pattern on the mask layer comprises: Imaging the photoresist layer with an image pattern using a photolithography system; And Developing the photoresist layer to form the image pattern on the photoresist layer Method for patterning a thin film on a substrate comprising a. The method of claim 1, wherein partially transferring the pattern to the ARC layer comprises performing at least one of a dry etch or a wet etch or a combination thereof. The method of claim 4, wherein partially transferring the pattern to the ARC layer comprises performing a dry plasma etch, a dry non-plasma etch, or a combination thereof. The method of claim 4, wherein partially transferring the pattern to the ARC layer comprises an anisotropic dry etching process, a reactive ion etching process, a laser assisted etching process, an ion milling process, or an imprinting process or two or more thereof. And performing the combination. The method of claim 1, wherein completing transferring the pattern to the ARC layer comprises performing a wet etching process or a dry etching process or a combination thereof. The method of claim 1, wherein forming the mask layer comprises forming a 248 nm resist, a 193 nm resist, a 157 nm resist or an extreme ultraviolet (EUV) resist, or a combination of two or more thereof on the ARC layer. A method of patterning a thin film on a substrate. The method of claim 1, wherein forming the film stack further comprises forming an organic planarization layer (OPL) on the thin film, and forming the ARC layer on the OPL. And patterning the thin film on the substrate. The method of claim 9, wherein the forming of the OPL comprises: a polyacrylate resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide resin, Or benzocyclobutene (BCB), or a combination of two or more thereof. 10. The method of claim 9, further comprising transferring the pattern in the ARC layer to the OPL prior to transferring the pattern to the thin film. 12. The method of claim 11, wherein transferring the pattern in the ARC layer to the OPL comprises etching the pattern to the OPL. 10. The method of claim 9, further comprising removing the OPL following transferring the pattern to the thin film. 10. The method of claim 9, wherein transferring the pattern in the ARC layer to the OPL substantially consumes the ARC layer. The method of claim 1, wherein forming the ARC layer comprises forming an organic layer, an inorganic layer, or both. A computer readable medium containing program instructions for executing on a control system, wherein the patterning system, when executed by the control system, Providing a film stack on a substrate, the film stack comprising a thin film formed on the substrate, an anti-reflective coating (ARC) layer formed on the thin film, and a mask layer formed on the ARC layer; Forming a pattern on the mask layer; Partially transferring the pattern to the ARC layer by transferring the pattern to a depth less than the thickness of the ARC layer; Subsequent to the partial transfer of the pattern to the ARC layer, removing remaining portions of the mask layer; Completing transferring the pattern to the ARC layer by etching the ARC layer; And Transferring the pattern to the thin film while substantially consuming the ARC layer Computer-readable medium containing program instructions for causing the computer to execute the program.

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