KR20080019231A - 안티-블루밍 절연을 가진 컬러 픽셀 및 형성 방법 - Google Patents

안티-블루밍 절연을 가진 컬러 픽셀 및 형성 방법 Download PDF

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Publication number
KR20080019231A
KR20080019231A KR1020077029347A KR20077029347A KR20080019231A KR 20080019231 A KR20080019231 A KR 20080019231A KR 1020077029347 A KR1020077029347 A KR 1020077029347A KR 20077029347 A KR20077029347 A KR 20077029347A KR 20080019231 A KR20080019231 A KR 20080019231A
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South Korea
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region
conductivity type
regions
imaging device
doped
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KR1020077029347A
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English (en)
Korean (ko)
Inventor
인나 패트릭
존 래드
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마이크론 테크놀로지, 인크
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Publication of KR20080019231A publication Critical patent/KR20080019231A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/1463—Pixel isolation structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14654—Blooming suppression
    • H01L27/14656—Overflow drain structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14687—Wafer level processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020077029347A 2005-05-16 2006-05-12 안티-블루밍 절연을 가진 컬러 픽셀 및 형성 방법 KR20080019231A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/129,462 2005-05-16
US11/129,462 US20060255372A1 (en) 2005-05-16 2005-05-16 Color pixels with anti-blooming isolation and method of formation

Publications (1)

Publication Number Publication Date
KR20080019231A true KR20080019231A (ko) 2008-03-03

Family

ID=36939184

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077029347A KR20080019231A (ko) 2005-05-16 2006-05-12 안티-블루밍 절연을 가진 컬러 픽셀 및 형성 방법

Country Status (7)

Country Link
US (1) US20060255372A1 (fr)
EP (1) EP1883968A1 (fr)
JP (1) JP2008546176A (fr)
KR (1) KR20080019231A (fr)
CN (1) CN101176208A (fr)
TW (1) TW200735341A (fr)
WO (1) WO2006124701A1 (fr)

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US7442974B2 (en) * 2006-01-31 2008-10-28 Hiok Nam Tay Image sensor with inter-pixel isolation
US7799491B2 (en) * 2006-04-07 2010-09-21 Aptina Imaging Corp. Color filter array and imaging device containing such color filter array and method of fabrication
US7605440B2 (en) * 2006-04-07 2009-10-20 Aptina Imaging Corporation Pixel cell isolation of charge storage and floating diffusion regions using doped wells
US7965444B2 (en) * 2006-08-31 2011-06-21 Micron Technology, Inc. Method and apparatus to improve filter characteristics of optical filters
US20080204580A1 (en) * 2007-02-28 2008-08-28 Micron Technology, Inc. Method, apparatus and system providing imaging device with color filter array
US20080211050A1 (en) * 2007-03-01 2008-09-04 Hiok Nam Tay Image sensor with inter-pixel isolation
US7821046B2 (en) 2007-04-27 2010-10-26 Aptina Imaging Corporation Methods, structures and sytems for an image sensor device for improving quantum efficiency of red pixels
US20090108385A1 (en) * 2007-10-29 2009-04-30 Micron Technology, Inc. Method and apparatus for improving crosstalk and sensitivity in an imager
KR20090071067A (ko) * 2007-12-27 2009-07-01 주식회사 동부하이텍 이미지 센서 및 그 제조방법
JP2011258903A (ja) * 2010-06-11 2011-12-22 Panasonic Corp 固体撮像素子
KR102013789B1 (ko) * 2012-07-06 2019-08-26 에스케이하이닉스 주식회사 씨모스 이미지센서 및 그 제조 방법
US9029972B2 (en) 2012-09-25 2015-05-12 Semiconductor Components Industries, Llc Image sensors with in-pixel anti-blooming drains
US9159753B2 (en) 2013-03-01 2015-10-13 Semiconductor Components Industries, Llc Image sensor pixels with self-aligned lateral anti-blooming structures
US9287313B2 (en) * 2013-03-12 2016-03-15 Taiwan Semiconductor Manufacturing Co., Ltd. Active pixel sensor having a raised source/drain
US9070802B2 (en) * 2013-08-16 2015-06-30 Himax Imaging, Inc. Image sensor and fabricating method of image sensor
US9673194B2 (en) * 2013-10-31 2017-06-06 Taiwan Semiconductor Manufacturing Company Limited Semiconductor arrangement and formation thereof
CN103811512B (zh) * 2014-03-17 2017-01-04 北京思比科微电子技术股份有限公司 一种防止图像弥散的图像传感器像素结构及其制造方法
US9613916B2 (en) * 2015-03-12 2017-04-04 Taiwan Semiconductor Manufacturing Co., Ltd. Protection ring for image sensors
TWI548075B (zh) * 2015-05-28 2016-09-01 力晶科技股份有限公司 影像感測器及其製作方法
US9865642B2 (en) * 2015-06-05 2018-01-09 Omnivision Technologies, Inc. RGB-IR photosensor with nonuniform buried P-well depth profile for reduced cross talk and enhanced infrared sensitivity
WO2019227066A1 (fr) * 2018-05-24 2019-11-28 Gigajot Technology Llc Capteur d'image pourvu de pixels à diffusions flottantes isolées
US10332732B1 (en) * 2018-06-01 2019-06-25 Eagle Technology, Llc Image intensifier with stray particle shield
US20220310685A1 (en) * 2021-03-24 2022-09-29 Artilux, Inc. Photo-detecting apparatus

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Publication number Priority date Publication date Assignee Title
JPS62296554A (ja) * 1986-06-17 1987-12-23 Matsushita Electronics Corp 固体撮像装置
US5122850A (en) * 1989-09-05 1992-06-16 Eastman Kodak Company Blooming control and reduced image lag in interline transfer CCD area image sensors
JPH09331058A (ja) * 1996-06-13 1997-12-22 Sony Corp 固体撮像素子
FR2820883B1 (fr) * 2001-02-12 2003-06-13 St Microelectronics Sa Photodiode a grande capacite
US6639204B1 (en) * 2001-07-06 2003-10-28 Pictos Technologies, Inc. Solid state color imager and method of manufacture
US6756616B2 (en) * 2001-08-30 2004-06-29 Micron Technology, Inc. CMOS imager and method of formation
KR100450670B1 (ko) * 2002-02-09 2004-10-01 삼성전자주식회사 포토 다이오드를 갖는 이미지 센서 및 그 제조방법
US6744084B2 (en) * 2002-08-29 2004-06-01 Micro Technology, Inc. Two-transistor pixel with buried reset channel and method of formation
KR20040036087A (ko) * 2002-10-23 2004-04-30 주식회사 하이닉스반도체 광의 파장에 따라 포토다이오드의 깊이가 다른 씨모스이미지센서 및 그 제조 방법
KR100485892B1 (ko) * 2002-11-14 2005-04-29 매그나칩 반도체 유한회사 시모스 이미지센서 및 그 제조방법
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US6897082B2 (en) * 2003-06-16 2005-05-24 Micron Technology, Inc. Method of forming well for CMOS imager

Also Published As

Publication number Publication date
US20060255372A1 (en) 2006-11-16
TW200735341A (en) 2007-09-16
CN101176208A (zh) 2008-05-07
WO2006124701A1 (fr) 2006-11-23
EP1883968A1 (fr) 2008-02-06
JP2008546176A (ja) 2008-12-18

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