KR20080012573A - Semiconductor device and the manufacturing method thereof - Google Patents

Abstract

A semiconductor device is provided to remove a leakage caused by a contact defect while minimizing a decrease of an aperture ratio by properly adjusting a contact formation position in consideration of a process margin. A first conductive layer is formed on a substrate. A second conductive layer is formed on the first conductive layer by interposing a first insulation layer and overlaps the first conductive layer in a first overlap area(OA1). A third conductive layer is formed on the second conductive layer by interposing a second insulation layer and overlaps the first and second conductive layers in a second overlap area. The second conductive layer is electrically connected to the third conductive layer by a first contact(C1). The first contact is formed in the second overlap area when the minimum line width of the second and third conductive layers disposed in the second overlap area is not less than the sum of the diameter and the installation space of the first contact. The first contact is formed in a third overlap area(OA3) where the second conductive layer overlaps the third conductive layer when the minimum line width of the second and third conductive layers is less than the sum of the diameter and the installation space of the first contact. The first to third conductive layers are respectively composed of a semiconductor layer(20), a scan line(40) and a drain electrode of an organic light emitting display.

Description

Semiconductor device and the manufacturing method

1 is a plan view schematically illustrating a layout of a portion of a driving circuit unit of an organic light emitting display device to which a semiconductor device according to an exemplary embodiment of the present invention is applied.

FIG. 2 is a partial cross-sectional view of "II-II" of FIG. 1.

3 is a partial sectional view taken along the line "III-III" in FIG.

4 is a plan view schematically illustrating a layout of a portion of a driving circuit unit of an organic light emitting display device to which a general semiconductor device is applied.

The present invention relates to a semiconductor device and a method for manufacturing the same, and more particularly, to a semiconductor device and a method for manufacturing the same that can reduce the contact failure while minimizing the reduction of the aperture ratio.

Various flat panel displays have been developed to reduce the weight and volume, which are disadvantages of cathode ray tubes. Such flat panel displays include Liquid Crystal Display (LCD), Field Emission Display (FED), Plasma Display Panel (PDP) and Organic Light Emitting Display (PDP). Etc.

The organic light emitting diode display is a display device including organic light emitting diodes that electrically excite an organic compound to emit light. The organic light emitting diode display may display an image by voltage driving or current driving N × M organic light emitting diodes.

Typically, the organic light emitting diode has a diode characteristic and is also called an organic light emitting diode, and includes an anode electrode which is a hole injection electrode, an emitting layer (EML), and a cathode electrode which is an electron injection electrode. When the exciton in which holes and electrons injected into the light emitting layer are combined from each electrode falls from the excited state to the ground state, light is emitted to display an image.

In addition, the emission layer has a multilayer structure including an electron injection layer (EIL) and a hole injection layer (HIL), and an electron transport layer (ETL) and a hole transport layer (Hole Transport Layer). ; HTL).

An organic light emitting display device having organic light emitting diodes having such a configuration may be classified into an active matrix type and a passive matrix type according to a driving method.

The active organic light emitting diode display includes a semiconductor device for driving the organic light emitting diode.

4 is a plan view schematically illustrating a layout of a portion of a driving circuit unit of an organic light emitting display device to which a general semiconductor device is applied. In FIG. 4, a semiconductor device includes a semiconductor layer 110 provided over a buffer film, a scan line 120 stacked over the semiconductor layer 110 with an insulating film therebetween, and a scan line with another insulating film therebetween. A source electrode 130 and a drain electrode 140 are stacked on the upper portion of the 120.

In the semiconductor device having the above structure, the drain electrode 140 is electrically connected to the scan line 120 by a contact C1, and the source electrode 130 and the drain electrode 140 are connected to the contacts C2 and C3. ) Are electrically connected to the source region and the drain region of the semiconductor layer 110, respectively.

Of course, in addition to the above-described structure, a semiconductor device having various structures may be provided. However, in a semiconductor device having a structure in which two or more conductive films are stacked with an insulating film interposed therebetween, it is generally used to electrically connect two conductive films. The contacts C1, C2, and C3 are provided.

On the other hand, the semiconductor device of the above configuration is required to operate at a high speed and to have a large storage capacity. In response to these demands, semiconductor devices have been developed to improve their integration, reliability, and response speed.

However, in order to form the semiconductor device more precisely and densely, the line width of the conductive film should be reduced. In this case, there is a problem in that electrical leakage defects occur due to process problems such as misalignment.

For example, when forming the contact C1 for electrically connecting the drain electrode 140 to the lower scan line 120 in the organic light emitting display having the semiconductor device illustrated in FIG. When a process abnormality occurs or a contact C1 is largely formed due to a process margin, the contact C1 is formed at a position slightly outside the scan line 120.

Therefore, an electrical leakage failure may occur due to a contact failure. In particular, the contact failure may include a second overlap area 2: OA2, in which the drain electrode 140 overlaps the semiconductor layer 110 and the scan line 120. It occurs easily when the minimum line width W in the hatched area | region is less than the magnitude | size which added the diameter D of the contact C1, and the setting clearance space 2G.

Here, the set clearance 2G is set to 8 µm (particularly 3.5 µm) in consideration of the process margin.

Therefore, in order to solve the above problem, the contact C1 should be formed in an area where only the drain electrode 140 and the scan line 120 overlap by changing the shape of the drain electrode 140.

However, when the drain electrodes of all the semiconductor devices included in the organic light emitting diode display are changed as described above in order to prevent contact failure, the aperture ratio of the display device is reduced due to the overlapping region between the drain electrodes and the scan lines. There is this.

SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a semiconductor device capable of preventing an electrical leakage failure due to a contact failure while minimizing a decrease in an opening ratio.

According to an aspect of the present invention for achieving the above object, a semiconductor device according to an embodiment of the present invention, a first conductive film formed on a substrate, a first insulating film interposed between the first conductive film on the top A second conductive layer formed on the second conductive layer, the second conductive layer overlapping the first conductive layer in a first overlapping region, and a second insulating layer interposed therebetween; An overlapping third conductive film, and a first contact electrically connecting the second conductive film and the third conductive film, wherein the first contact is formed of the second conductive film and the third conductive film disposed in the second overlapping region. The minimum line width of the second conductive layer and the third conductive layer formed in the second overlapping region and formed in the second overlapping region when the minimum line width of the film is equal to or larger than the sum of the diameter and the set clearance of the first contact. In this case, the size is less than the sum of the diameter and the setting space of the first contact is formed in the third overlapping area of the second conductive film overlapping with the third conductive film.

According to an embodiment of the present invention, the set clearance is preferably set to 8 µm or less, particularly 3 µm or less in consideration of process margin.

The first conductive film and the second conductive film are electrically connected by a second contact.

In the semiconductor device having the above-described configuration, determining whether the second conductive layer disposed in the second overlapping region and the minimum line width of the third conductivity are equal to or greater than the sum of the diameters of the first contact to be formed and the set clearance space; And forming the first contact in the second overlapping region when the determination value in the step is "Yes", and forming the first contact in the third overlapping region when the determination value is "no". It can manufacture by the manufacturing method of a semiconductor device including the step of doing.

In the semiconductor device having the above-described configuration, the first to third conductive films may be used as the semiconductor layer, the scan line, and the drain electrode of the organic light emitting diode display.

In this case, the semiconductor device having the above-described configuration may be configured such that the minimum line width of at least one of the scan line and the drain electrode disposed in the second overlapping region is equal to or larger than the sum of the diameters of the first contact to be formed and the set clearance. And if the determination value in the step is "Yes", the first contact is formed in the second overlapping region, and if the determination value is "no", the first contact is formed in the third contact point. It can manufacture by the manufacturing method of a semiconductor device including forming in an overlapping area | region.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

1 is a plan view schematically illustrating a layout of a portion of a driving circuit unit of an organic light emitting display device to which a semiconductor device according to an exemplary embodiment of the present invention is applied. 2 is a partial sectional view taken along the line "II-II" of FIG. 1, and FIG. 3 is a partial sectional view taken along the line "III-III" of FIG.

As mentioned above, an active organic light emitting display device typically includes a substrate 100. The substrate 100 may be made of an insulating glass substrate, or may be made of a metal foil.

A buffer film 10 is formed on the substrate 100, and a plurality of semiconductor devices for driving an organic light emitting element are formed on the buffer film 10. Two or more semiconductor devices are typically formed per subpixel. The red, green, and blue subpixels are gathered to form one pixel.

Hereinafter, only one semiconductor device provided in one subpixel will be described. However, the semiconductor device described above may be modified into various structures depending on the function of the device.

For example, a semiconductor device serving as a switching transistor, a semiconductor device serving as a driving transistor, and a semiconductor device serving as a light emitting transistor are not the same in detailed configuration according to a manufacturing company of an organic light emitting display device or according to a product specification. It may be configured.

On the buffer film 10, a semiconductor layer 20 is formed that includes a source region, a drain region, and a channel region disposed between the regions.

The semiconductor layer 20 is fabricated by forming a polycrystalline silicon film on the buffer film 10, patterning the film into a predetermined shape, and then implanting impurity ions into the polycrystalline silicon film to form a source region and a drain region. can do.

The gate insulating film 30 is formed on the semiconductor layer 20 having such a configuration, and the scan line 40 is formed on the gate insulating film 30.

In this case, the scan line 40 overlaps the semiconductor layer 20 in the first overlapping region OA1.

An interlayer insulating film 50 is formed on the scan line 40, and a drain electrically connected to the source electrode 60 and the drain region electrically connected to the source region of the semiconductor layer 20 on the interlayer insulating film 50. The electrode 70 is formed.

In this case, the drain electrode 70 overlaps the semiconductor layer 20 and the scan line 40 in the second overlapping region (see OA2 in FIG. 4).

However, the drain electrode 70 should be electrically connected to the scan line 40 below.

Therefore, the first contact C1 for electrically connecting the drain electrode 70 and the scan line 40 should be formed. In an embodiment of the present invention, the first contact C1 is disposed in the second overlapping region (see OA2 in FIG. 4). The position of the first contact C1 is determined by comparing the minimum line width (see W in FIG. 4) of the drain electrode 70 and the scan line 40 with the diameter of the first contact C1 (see D in FIG. 4). Adjust

More specifically, the method of manufacturing a semiconductor device according to an exemplary embodiment of the present invention includes a size obtained by adding the diameter of the first contact C1 (refer to FIG. 4D) and the set clearance space (see 2G of FIG. 4) to be formed first. And the minimum linewidth (see W in FIG. 4).

Here, it is preferable that the set clearance space (refer to 2G in FIG. 4) be set to 8 µm or less, particularly 3 µm or less, in consideration of the process margin in the contact forming process.

That is, when the first contact C1 is to be formed in the second overlapped region (see OA2 in FIG. 4), the minimum line width (see W in FIG. 4) in the second overlapped region (see OA2 in FIG. 4) is the contact. If the diameter (see D of FIG. 4) and the set clearance (see 2G of FIG. 4) or more, leakage due to a contact failure can be prevented even if the process margin is considered.

However, if the minimum line width (see W in FIG. 4) in the second overlapping region (see OA2 in FIG. 4) is less than the contact diameter (see D in FIG. 4) and the set clearance (see 2G in FIG. 4) There is a risk of leakage due to defects.

Therefore, in this case, as shown in FIG. 1, the shape of the drain electrode 70 is changed such that the drain electrode 70 overlaps the scan line 40 in the third overlapping region OA3, and the third overlapping is performed. The first contact C1 is formed in the region OA3.

According to such a structure, the leakage by the contact failure can be prevented.

The source electrode 60 is electrically connected to the source region of the semiconductor layer 20 by the contact C2, and the drain electrode 70 is electrically connected to the drain region and the contact C3.

As described above, in the exemplary embodiment of the present invention, the drain electrodes 70 of all the semiconductor devices included in the organic light emitting diode display are not formed in the shape shown in FIG. 1, and the minimum line width W of the second overlapping region OA2 is not formed. ) Is formed in the shape shown in FIG. 1 only when the contact diameter D and the set clearance 2G are smaller than the combined size, thereby minimizing the reduction of the aperture ratio due to the shape change of the drain electrode 70.

The semiconductor device having such a configuration enables driving of the organic light emitting diode display by applying current to the first and second electrodes disposed with the organic light emitting layer therebetween.

Although the above embodiment discloses a structure in which three conductive films are stacked, a structure in which more conductive films are stacked may be used, and the shape of the stacked conductive films is not limited to the disclosed structure.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications and changes can be made within the scope of the claims and the detailed description of the invention and the accompanying drawings. Naturally, it belongs to the scope of the invention.

As described above, according to the present invention, by appropriately adjusting the contact formation position in consideration of the process margin, it is possible to effectively eliminate leakage due to poor contact while minimizing the reduction of the aperture ratio.

Claims (8)

A first conductive film formed on the substrate; A second conductive film formed over the first conductive film with a first insulating film interposed therebetween and overlapping the first conductive film in a first overlapping region; A third conductive film formed over the second conductive film with a second insulating film therebetween and overlapping the first and second conductive films in a second overlapping region; And A first contact electrically connecting the second conductive film and the third conductive film Including; The first contact is formed in the second overlapping region when the minimum line widths of the second conductive layer and the third conductive layer disposed in the second overlapping region are equal to or larger than the sum of the diameter and the set clearance of the first contact. A third overlapping area where the second conductive film and the third conductive film overlap when the minimum line width of the second conductive film and the third conductive film disposed in the second overlapping area is less than the sum of the diameter of the first contact and the set clearance; The semiconductor device formed in the. The method of claim 1, The said set clearance space is 8 micrometers or less, The semiconductor device characterized by the above-mentioned. The method of claim 2, The semiconductor device is characterized in that the set clearance is especially 3 µm or less. The method of claim 3, wherein And the first conductive film and the second conductive film are electrically connected by a second contact. The method according to any one of claims 1 to 4, The semiconductor device of claim 1, wherein the first to third conductive layers each include a semiconductor layer, a scan line, and a drain electrode of the organic light emitting diode display. The method of claim 5, And the first insulating film is a gate insulating film, and the second insulating film is an interlayer insulating film. As a manufacturing method of the semiconductor device of any one of Claims 1-4, Determining whether a minimum line width of a second conductive layer and a third conductive layer disposed in the second overlapping region is equal to or larger than a sum of a diameter and a set clearance of the first contact to be formed; And If the determination value in the step is "Yes", the first contact is formed in the second overlapping region, and if the determination value is "No", the first contact is formed in the third overlapping region. step Method for manufacturing a semiconductor device comprising a. As the manufacturing method of the semiconductor device of Claim 6, Determining whether a minimum line width of a scan line and a drain electrode disposed in the second overlapping region is equal to or larger than a sum of a diameter of the first contact to be formed and a set free space; And If the determination value in the step is "Yes", the first contact is formed in the second overlapping region, and if the determination value is "No", the first contact is formed in the third overlapping region. step Method for manufacturing a semiconductor device comprising a.

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