KR20080000208A - Liquid crystal display and manufacturing method therof - Google Patents

Abstract

An LCD and a fabrication method thereof are provided to reduce a defect of crosstalk by forming a first light blocking line overlapping a data line and a pixel electrode on a TFT substrate and a second light blocking line connecting the first light blocking lines. A gate line(20) and a data line(40) define a pixel area. A pixel electrode(60) is formed in the pixel area. A first light blocking line(80a) overlaps the data line. A second light blocking line(80b) is connected to the first light blocking line and is formed in parallel with the gate line. A storage line(50) is separated from the first light blocking line, and is formed parallel with the gate line. A first connection line(82a) connects one set of ends of the second light blocking lines. A second connection line(82b) connects other set of ends of the second light blocking lines.

Description

Liquid crystal display and its manufacturing method {LIQUID CRYSTAL DISPLAY AND MANUFACTURING METHOD THEROF}

1 is a view illustrating capacitors formed between each of a pixel electrode and a data line and a light blocking layer according to the related art.

2 is a plan view showing a thin film transistor substrate according to the present invention.

3 is a cross-sectional view illustrating a cross section taken along the line II ′ of FIG. 1.

4 is a plan view illustrating a thin film transistor substrate to which the first and second connection lines and the first and second light blocking lines according to the present invention are applied.

5A to 5E are cross-sectional views illustrating a method of manufacturing a thin film transistor according to the present invention.

<Brief description of symbols for the main parts of the drawings>

3, 40 data line 4a, 4b, 60 pixel electrode

5, 80a, 80b: light blocking lines 6, 7, 8: capacitor electrode

10: substrate 20: gate line

22: source electrode 24: gate electrode

26 drain electrode 28 contact hole

30 gate insulating film 32 protective film

34: active layer 36: ohmic contact layer

82a, 82b: connection line

The present invention relates to a liquid crystal display device, and more particularly, to a liquid crystal display device and a method of manufacturing the same that can reduce power consumption and cross talk.

In general, a liquid crystal display (LCD) displays an image by adjusting light transmittance of each of the liquid crystal cells arranged in a matrix form on the liquid crystal panel according to a video signal.

Accordingly, the liquid crystal having the dielectric anisotropy rotates in accordance with the voltage difference to change the transmittance of the light incident from the backlight. In this case, in order to prevent light leakage in the gate line and data line regions, a light blocking line serving as a black matrix is formed to overlap the region where the pixel electrode is formed. This structure causes a vertical cross talk failure.

FIG. 1 is a diagram showing the capacitors 6, 7, 8 formed between the first and second pixel electrodes 4a, 4b, and each of the data lines 3 and the light blocking line 5. As shown in FIG.

The capacitors 6, 7 and 8 shown in FIG. 1 include a first capacitor 6 formed by overlapping one pixel electrode 4a and a light blocking line 5, and a second pixel electrode 4b and light blocking. A third capacitor 8 formed by overlapping the lines 5 and a second capacitor 7 formed by overlapping the data line 3 and the light blocking line 5 are provided.

Here, the light blocking line 3 is formed such that the first and second pixel electrodes 4a and 4b overlap the data line 3. At this time, the capacitor 7 of the data line 3 swings the voltage applied to the light blocking line 5 according to the data voltage. Accordingly, the first and second pixel electrodes 4a and 4b are also swinged by the capacitors 6 and 8 formed by overlapping the light blocking line 5.

In addition, when a high voltage is applied to the data voltage according to the swing of the voltage, the voltages of the first and second pixel electrodes 4a and 4b also increase, thereby generating vertical crosstalk.

Accordingly, an object of the present invention is to provide a liquid crystal display device and a method of manufacturing the same that can reduce power consumption and cross talk.

In order to achieve the above technical problem, a liquid crystal display according to the present invention includes a gate line and a data line defining a pixel region; A pixel electrode formed in the pixel region; A first light blocking line formed to overlap the data line; It is formed to be connected to each of the first light blocking line, characterized in that it comprises a second light blocking line formed in parallel with the gate line.

And a storage line separated from the first light blocking line and formed to be parallel to the gate line.

A first connection line connecting one end of each of the second light blocking lines; And a second connection line connecting the other end of each of the second light blocking lines.

The first light blocking line is formed to overlap the left and right sides of the pixel electrode, and the second light blocking line is formed to overlap the upper side of the pixel electrode.

In order to achieve the above technical problem, a method of manufacturing a liquid crystal display according to the present invention includes a gate line, a first light blocking line parallel to the gate line, and a second light blocking line vertically connected to the first light blocking line. Forming; Forming a gate insulating film covering the gate line and the first and second light blocking lines; Forming a data line overlapping the first light blocking line on the gate insulating layer; Forming a passivation layer to cover the data line; And forming a pixel electrode on the passivation layer.

Forming a first connection line connecting one end of each of the second light blocking lines; The method may further include forming a second connection line connecting the other end of each of the second light blocking lines.

The first light blocking line may partially overlap the left and right sides of the pixel electrode, and the second light blocking line may partially overlap the upper side of the pixel electrode.

Other technical problems and advantages of the present invention in addition to the above technical problem will be apparent from the description of the preferred embodiment of the present invention with reference to the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to FIGS. 2 to 5E.

2 is a plan view illustrating a thin film transistor substrate according to the present invention, and FIG. 3 is a cross-sectional view illustrating a cross section taken along line II ′ of FIG. 1.

2 and 3, the liquid crystal display according to the present invention includes a gate line 20 and a data line 40 defining a pixel region, a pixel electrode 60 formed in the pixel region, and a gate line 20. And a thin film transistor connected between the data line 40 and the pixel electrode 60, the first light blocking line 80a formed to overlap the data line 40, and each of the first light blocking lines 80a. And a second light blocking line 80b for connecting the first light blocking line 80b and a storage line 50 that is formed in parallel with the gate line 40 to supply a storage voltage.

The thin film transistor supplies the data line 40 and the supplied data signal to the pixel electrode 60 in response to the scan signal supplied to the gate line 20. To this end, the thin film transistor is connected to the gate electrode 24 connected to the gate line 20, the source electrode 22 connected to the data line 40, and the source electrode 22 and connected to the pixel electrode 60. The active layer 34 and the source electrode 22 overlapping the gate electrode 24 with the drain electrode 26 and the gate insulating film 30 interposed therebetween to form a channel between the source electrode 22 and the drain electrode 26. ) And an ohmic contact layer 36 formed on the active layer 34 for ohmic contact with the drain electrode 26.

The pixel electrode 60 is formed in the pixel region defined by the intersection of the gate line 20 and the data line 40, and the pixel electrode 60 is formed through the contact hole 28 passing through the passivation layer 32. It is connected to the drain electrode 26. The pixel electrode 60 is formed to partially overlap the first light blocking line 80a with the passivation layer 32 interposed therebetween, and the upper part of the pixel electrode 60 to partially overlap the second light blocking line 80b. The first light blocking line 80a overlapped with the pixel electrode 60 prevents light leakage between the data line 40 and the pixel electrode 60. The pixel electrode 60 charges the data signal supplied from the thin film transistor to generate a potential difference with the common electrode formed on the upper substrate 10. Due to the potential difference, the liquid crystal positioned on the upper substrate 10 having the color filter and the lower substrate 10 having the thin film transistor is rotated by dielectric anisotropy, and the amount of light incident from the light source via the pixel electrode 60 is adjusted. To be transmitted toward the upper substrate 10.

The first light blocking line 80a is formed to partially overlap the data line 40, and is formed to be wider than the width of the data line 40 so that the first light blocking line 80a partially overlaps the left and right sides of the pixel electrode 60. Light leakage between the and pixel electrodes 60 is blocked. The first light blocking line 80a is formed of the same metal layer as the gate metal pattern.

Since the first light blocking line 80a is electrically connected to the storage line 50 in the related art, a storage voltage is also applied to the first light blocking line 80a to increase power consumption. On the other hand, the first light blocking line 80a according to the present invention is formed to be separated from the storage line 50, and the storage voltage is applied only to the storage line 50, thereby reducing power consumption compared with the conventional art.

The second light blocking line 80b is formed to cross the first light blocking line 80a and partially overlaps the upper portion of the pixel electrode. The first light blocking line 80a may reduce cross talk between the area where the data signal swings and the area that does not swing, and blocks light leakage between the gate line 20 and the pixel electrode 60. The second light blocking line 80b is formed of the same metal layer as the gate metal pattern. In addition, the second light blocking line 80b includes at least one.

As shown in FIG. 4, the liquid crystal display according to the present invention includes a first connection line 82a and a second light blocking line 80b connecting one side of a second light blocking line 80b formed in each pixel area. It has a second connection line 82b for connecting the other side of the. Here, the second light blocking line 80b swings the voltages applied to the first and second light blocking lines 80a and 80b according to a data voltage high in a predetermined region. Accordingly, the width of the swing can be reduced by connecting the first and second light blocking lines in units of pixels. Here, the first and second connection lines 82a and 82b may be formed of the same material as the first and second light blocking lines 80a and 80b, and may prevent light leakage and reduce horizontal crosstalk.

The storage capacitor maintains the voltage even when the thin film transistor is turned off in the liquid crystal cell formed of the liquid crystal formed between the common electrode and the pixel electrode 60. The storage capacitor is formed by overlapping the drain electrode 26 and the storage line 50 connected to the pixel electrode 60 with the gate insulating film 30 interposed therebetween. The storage line 50 is formed in parallel with the gate line 20 and supplies a storage voltage. The storage line 50 is formed of the same metal layer as the gate metal pattern.

In the liquid crystal display according to the present invention, the protective film is formed of an organic film, thereby achieving a high opening ratio.

5A to 5E are cross-sectional views illustrating a method of manufacturing a thin film transistor according to the present invention.

Referring to FIG. 5A, the gate electrode 24 and the storage line 50, the first light blocking line 80a and the second light blocking line 80b, and the gate line 20 are disposed on the substrate 10. A gate metal pattern is formed.

Specifically, a gate metal layer is formed on a substrate 10 such as glass through a deposition method such as a sputtering method. The gate metal layer is used in which molybdenum (Mo), aluminum (Al), chromium (Cr), and the like, and alloys thereof are stacked in a single layer or a multilayer structure. Subsequently, the gate metal layer is patterned through a photolithography process and an etching process using a mask to form the gate electrode 24, the storage line 50, the first and second light blocking lines 80a and 80b, and the gate line 20. ) Is formed.

 Referring to FIG. 5B, the gate insulating layer 30, the active layer 34, and the ohmic contact layer 36 are formed on the substrate 10 on which the gate metal pattern is formed.

Specifically, the gate insulating layer 30 is formed by applying an inorganic insulating material on the substrate 10 on which the gate metal pattern is formed. The active layer 34 and the ohmic contact layer 36 are formed by sequentially depositing an a-Si layer and an n + type a-Si layer on the gate insulating layer 30 and patterning the same through a photolithography process and an etching process. .

Referring to FIG. 5C, source / drain electrodes 22 and 26 and data lines 40 are formed on the gate insulating layer 30 on which the active layer 34 and the ohmic contact layer 36 are formed.

Specifically, a source / drain metal pattern is deposited on the gate insulating layer 30 on which the active layer 34 and the ohmic contact layer 36 are formed by a sputtering method, and then the source / drain electrodes 22, A source / drain metal pattern comprising 26 is formed. In this case, the active layer 34 is exposed by etching the ohmic contact layer 36 exposed through the etching process using the source / drain metal pattern as a mask.

Referring to FIG. 5D, a passivation layer 32 is formed on the substrate 10 on which the source / drain metal pattern is formed.

Specifically, a contact hole exposing the drain electrode 20 by depositing an organic material on the gate insulating layer 30 on which the source / drain metal pattern is formed by a deposition method such as PECVD and patterning through a photolithography process and an etching process ( 28, the protective film 32 is formed. Here, as the protective film 32, an organic insulating material such as an acrylic resin is used.

Referring to FIG. 5E, the pixel electrode 60 is formed on the passivation layer 32.

In detail, the pixel electrode 60 is formed on the passivation layer 32 to be connected to the drain electrode 20 through the contact hole 28. The pixel electrode 60 is formed in the pixel region by applying a transparent conductive material on the passivation layer 32 by a deposition method such as sputtering, and then patterning it through a photolithography process and an etching process, and the drain electrode through the contact hole 28. It is connected with 20. In this case, the first light blocking line 80a is partially overlapped on the left and right sides of the pixel electrode 60, and the second light blocking line 80b is formed on the upper side to partially overlap. Herein, indium tin oxide (ITO) and indium zinc oxide (IZO) may be used as the transparent conductive material.

As described above, the thin film transistor substrate 10 of the liquid crystal panel according to the present invention may use the first and second light blocking lines 80b to manufacture a thin film transistor substrate capable of reducing power consumption and cross talk.

As described above, the liquid crystal display device and the method of manufacturing the same according to the present invention form a first light blocking line overlapping the data line and the pixel electrode on the thin film transistor substrate and connect each first light blocking line to each other. Light blocking lines can be provided to reduce crosstalk defects.

The second light blocking line is also connected to the storage line through the first and second connection lines. As a result, it is formed separately from the data line and the storage line, thereby reducing the power consumption by reducing the area, and reducing the cross talk while reducing the influence on the high data voltage in some areas.

Those skilled in the art will appreciate that various changes and modifications can be made without departing from the technical spirit of the present invention. Therefore, the technical scope of the present invention should not be limited to the contents described in the description of the specification but should be defined by the claims.

Claims (7)

A gate line and a data line defining a pixel region; A pixel electrode formed in the pixel region; A first light blocking line formed to overlap the data line; And a second light blocking line formed to be connected to each of the first light blocking lines and parallel to the gate line. The method of claim 1, And a storage line separated from the first light blocking line and parallel to the gate line. The method of claim 1, A first connection line connecting one end of each of the second light blocking lines; And a second connection line connecting the other end of each of the second light blocking lines. The method of claim 3, wherein And the first light blocking line overlaps the left and right sides of the pixel electrode, and the second light blocking line overlaps the upper side of the pixel electrode. Forming a gate line, a first light blocking line parallel to the gate line, and a second light blocking line vertically connected to the first light blocking line; Forming a gate insulating film covering the gate line and the first and second light blocking lines; Forming a data line overlapping the first light blocking line on the gate insulating layer; Forming a passivation layer to cover the data line; Forming a pixel electrode on the passivation layer. The method of claim 5, Forming a first connection line connecting one end of each of the second light blocking lines; And forming a second connection line connecting the other end of each of the second light blocking lines. The method of claim 5, And the first light blocking line is partially overlapped with the left and right sides of the pixel electrode, and the second light blocking line is partially overlapped with the upper side of the pixel electrode.

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