KR20070117363A - Organic electroluminescence display device and method for fabricating the same - Google Patents

Abstract

An organic electroluminescence display device and a manufacturing method thereof are provided to prevent oxygen or moisture from diffusing into a pixel portion through an organic layer. A pixel portion(A) is formed on a predetermined region of a substrate(200). The pixel portion has a first electrode(240) defined by first and second signal lines and electrically connected to the first and second signal lines, an organic layer(250) positioned on the first electrode, and a second electrode(255) positioned on the organic layer. A second insulating layer(235) is formed on a first insulating layer(225), and has a first trench(T1) exposing a part of the first insulating layer. A first conductive layer(270) is formed on the first trench, and a third insulating layer(245) is formed on the second insulating layer. A second conductive layer(275) is formed on the second trench.

Description

Organic electroluminescent display device and method for manufacturing same {Organic Electroluminescence Display Device and method for fabricating the same}

1 is a cross-sectional view illustrating an organic light emitting display device according to the related art.

2A and 2B are plan views and cross-sectional views of an organic light emitting display device according to an embodiment of the present invention.

3A to 3F are cross-sectional views illustrating a method of manufacturing an organic light emitting diode according to an embodiment of the present invention.

 <Description of the symbols for the main parts of the drawings>

240,340: first electrode 250,350: organic film

255,355 Second electrode 260,360 Cathode bus line

270,370: first conductive layer 275,375: second conductive layer

The present invention relates to an organic light emitting display device and a method of manufacturing the same. More particularly, the first and second trenches are disposed outside the pixel portion to prevent the planarization layer or the pixel definition layer, which is an organic layer, from becoming a moisture penetration path to the pixel portion. The second electrode is disconnected due to the step difference between the first and second trenches. When the first electrode is formed to solve the problem, the first conductive layer is formed on the first trench. An organic electroluminescent display device and a method of manufacturing the same, which solve the above problems by providing a structure for contacting the first conductive layer when forming a body layer and forming a second electrode on the second trench. .

Recently, liquid crystal display devices, organic electroluminescence display devices, and FEDs that solve the disadvantages of conventional display devices, such as cathode ray tubes, which are heavy and large. Background Art A flat panel display device such as an emission display or a plasma display plane (PDP) has attracted attention.

At this time, the organic light emitting display device is characterized by excellent characteristics such as simple structure, light efficiency, DC low voltage driving and high-speed response by self-emission of organic material.

1 is a cross-sectional view illustrating an organic light emitting display device according to the related art.

Referring to FIG. 1, a buffer layer 105 is positioned on the entire surface of a transparent insulating substrate 100 such as glass or plastic.

In addition, a thin film transistor including a semiconductor layer 110, a gate insulating layer 115, a gate electrode 120, an interlayer insulating layer 125, and a source / drain electrode 130 on the pixel portion A, which is a predetermined region of the substrate. Is positioned on the thin film transistor and defines a pixel as an organic layer exposing a portion of the first electrode 140 and a portion of the first electrode 140 connected to the planarization layer 135, the source / drain electrode 130, and via holes. The organic layer 150 and the second electrode 155 including at least one light emitting layer in contact with the film 145 and the first electrode 140 are positioned.

On the peripheral portion B, which is an outer region of the pixel portion A, a buffer layer 105, a gate insulating layer 115, and an interlayer insulating layer 125 formed in succession with the pixel portion A are sequentially stacked, and the interlayer The cathode bus line 160, which is formed at the same time as the source / drain electrodes 130, is positioned on a predetermined region of the insulating layer 125, and similarly to the pixel portion A on the substrate on which the cathode bus line 160 is located. The planarization layer 135 and the pixel definition layer 154 are positioned, and the cathode bus line 160 and the second electrode 155 are in contact with each other by opening the pixel definition layer 145 and the planarization layer 135. I am trying to. In this case, a contact layer 180 is formed between the cathode bus line 160 and the second electrode 155 at the same time when the first electrode 140 is formed in order to improve contact.

In this case, in order to prevent oxygen or moisture penetrating into the periphery of the peripheral portion B from penetrating into the pixel portion A, the interlayer insulating layer 125 is formed in a predetermined region of the peripheral portion B close to the pixel portion A. A portion of the pixel definition layer 145 is exposed to expose the first trench 170 that opens a portion of the planarization layer 135 and the interlayer insulating layer 125 in the first trench 170. An open second trench 175 is positioned so that the planarization film 135 or the pixel definition film 145, which is an organic film, is not connected.

The above structure has a high effect of preventing oxygen or moisture from penetrating into the pixel portion A. However, the first trench 170 may be formed due to the step difference between the first trench 170 and the second trench 175. And a problem in that the second electrode 155 formed on the second trench 175 is disconnected, resulting in a poor wiring of the second electrode.

Accordingly, the present invention is to solve the above-mentioned disadvantages and problems of the prior art, by placing a contact layer formed simultaneously with the first electrode on the interlayer insulating film exposed by the first trench and the second trench. SUMMARY OF THE INVENTION An object of the present invention is to provide an organic light emitting display device and a method of manufacturing the same, which improve a poor contact between an electrode and a cathode bus line.

The object of the present invention is a substrate; An organic layer disposed on a predetermined area on the substrate and defined by a first signal line and a second signal line, the first electrode being electrically connected to the first signal line and the second signal line, and an organic layer on the first electrode and including a light emitting layer And a pixel unit including a plurality of unit pixels including a second electrode on the organic layer. A second insulating layer surrounding the pixel portion and positioned on the first insulating layer, the second insulating layer including a first trench exposing a predetermined region of the first insulating layer; A first conductive layer on the first trench; A third insulating layer on the second insulating layer, the third insulating layer including a second trench exposing a predetermined region of the first conductive layer and the second conductive layer in contact with the first conductive layer and positioned on the second trench; It is achieved by an organic light emitting display device comprising a body layer.

In addition, the object of the present invention is to prepare a substrate, to form a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a source / drain electrode on the pixel portion of the substrate, A second insulating layer is formed, and a portion of the second insulating layer is etched to form a via hole for exposing the source / drain electrodes and an outer periphery of the pixel portion, and a first trench for exposing the first insulating layer; After depositing a first electrode forming material, the first electrode forming material is patterned to form a first electrode contacting the source / drain electrode through the via hole and a first conductive layer covering the first trench, and forming a third insulating layer on the substrate. After forming, patterning is performed to form a pixel definition layer on the pixel portion, and a second trench is formed in the region where the first trench is formed to expose the first conductive layer. And forming an organic layer including at least a light emitting layer on the first electrode of the pixel portion, and forming a second electrode in contact with the organic layer and a second conductive layer in contact with the first conductive layer on the substrate. It is also achieved by a method for manufacturing an organic light emitting display device.

In addition, the object of the present invention is to prepare a substrate, a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode, a first insulating film and a source / drain electrode on the pixel portion of the substrate and on a predetermined region outside the pixel portion. A via hole for forming a cathode bus line on the substrate and forming a second insulating layer on the substrate, and etching a part of the second insulating layer to expose the source / drain electrode; A first trench for enclosing an outer periphery and exposing the first insulating layer and a first contact hole for exposing the cathode bus line to the periphery of the first trench, and depositing a first electrode forming material on the substrate Patterning the first electrode to contact the source / drain electrode through the via hole, the first trench and the cathode bus line, and A first conductive layer covering a contact hole is formed, a third insulating layer is formed on the substrate, and then patterned to form a pixel definition layer on the pixel portion, and the first conductive layer is formed on a region where the first trench is formed. Forming a second trench for exposing the second trench and a second contact hole for exposing the first conductive layer in contact with the cathode bus line, and forming an organic layer including at least a light emitting layer on the first electrode of the pixel portion; It is also achieved by a method of manufacturing an organic light emitting display device comprising forming a second conductive layer on the organic layer and in contact with the first conductive layer.

Details of the above object and technical configuration of the present invention and the effects thereof according to the present invention will be more clearly understood by the following detailed description with reference to the drawings showing preferred embodiments of the present invention.

2A and 2B are plan views and cross-sectional views of an organic light emitting display device according to an embodiment of the present invention. 2B is a cross-sectional view taken along the line II of FIG. 2A.

Referring to FIGS. 2A and 2B, a buffer layer 205, a semiconductor layer 210, a gate insulating layer 215, a gate electrode 220, and a predetermined region of a transparent insulation substrate 200 such as glass or plastic may be formed. The second insulating layer 235 and the source / drain electrode for removing the step difference caused by lower elements such as the thin film transistor including the first insulating film 225 and the source / drain electrode 230, and the thin film transistor. The first electrode 240 connected to the 230, the third insulating layer 245 exposing a predetermined region of the first electrode 240, and the first electrode 240 exposed by the third insulating layer 245. The pixel portion A including the organic layer 250 including the emission layer and the second electrode 255 positioned on the organic layer 250 is positioned.

In this case, the first insulating film 225 may be a silicon oxide film, a silicon nitride film or a multilayer interlayer insulating film thereof, the second insulating film 235 may be a planarization film made of an organic material, and the third insulating film 245 may be The pixel defining layer may be formed of an organic material.

In addition, a buffer layer 205, a gate insulating film 215, a first insulating film 225, and a second insulating film 235 of the pixel portion A may be formed in the peripheral portion B of the pixel portion A of the substrate. And the third insulating layer 245 extends.

In addition, the peripheral portion B is formed of the same material as the source / drain electrode 230, and a cathode bus line 260 is positioned between the first insulating layer 215 and the second insulating layer 235.

In addition, the gate electrode 220 or the source / drain electrode 230 may be formed of the same material, between the gate insulating layer 205 and the first insulating layer 225, or between the first insulating layer 225 and the second insulating layer 235. The common power supply line 265 (shown only between the gate insulating film 215 and the first insulating film 225 shown in FIG. 2B) is positioned between the two lines.

In this case, a first contact hole exposing a portion of the first insulating layer 225 and a portion of the cathode bus line 260 is exposed in the second insulating layer 235 on the peripheral portion B. (C1) is included. In this case, a first conductive layer 270 is positioned on the first trench T1 and the first contact hole C1, which are simultaneously formed when the first electrode 240 of the pixel portion A is formed. It is preferable that they can be connected to each other as shown in Figure 2b.

The third insulating layer 245 on the peripheral portion B includes a second trench T2 and a second contact hole C2 exposing a part of the first conductive layer 270. In this case, the second conductive layer is in contact with the second trench T2 and the second contact hole C2 on the third insulating layer 245 including the second trench T2 and the second contact hole C2. (275) is located. In this case, the second conductive layer 275 is simultaneously formed of the same material as the second electrode of the pixel portion A and connected to each other.

Accordingly, the second insulating layer 235 and the third insulating layer 245 on the pixel portion A may have the second insulating layer 235 and the third insulating layer 245 of the peripheral portion B having the first insulating layer 225. And completely separated by the first conductive layer 270 and the second conductive layer 275 (as shown in FIG. 2A, the first trenches T1 and the second trenches so as to completely surround the pixel portion A). T2) is formed, and in the region where the trenches are formed, the first conductive layer 270 and the second conductive layer 275 are formed), and the complete separation of the organic layer is performed by oxygen or moisture as described in the related art. The passage that moves to the pixel portion A through the organic film is blocked, so that adverse effects due to oxygen or moisture are not generated.

In addition, by forming the first trench T1 and the second trench T2, the second conductive layer 275 connected to the second electrode 255 may be disconnected due to a step generated by the trenches. Two-electrode wiring defects tend to occur. This problem can be solved by bringing the first conductive layer 270 and the second conductive layer 275 into contact with the trenches once again. That is, this problem can be solved by increasing the contact area by contacting the first conductive layer 270 and the second conductive layer 275 exposed by the trenches.

3A to 3F are cross-sectional views illustrating a method of manufacturing an organic light emitting diode according to an embodiment of the present invention.

Referring to FIG. 3A, a buffer layer 305 is formed of a silicon oxide film, a silicon nitride film, or a multilayer thereof on the entire surface of a transparent insulating substrate 300 such as glass or plastic.

In this case, the buffer layer 305 serves to prevent the diffusion of moisture or impurities generated in the lower substrate, or to control the rate of heat transfer during crystallization, so that the semiconductor layer can be crystallized well.

Subsequently, a semiconductor layer 310 is formed on the pixel portion A of the substrate 300.

In this case, the semiconductor layer 310 may be formed by crystallizing and patterning an amorphous silicon layer on the substrate. In this case, the amorphous silicon may be used by chemical vapor deposition (Physical Vapor Deposition) or physical vapor deposition (Physical Vapor Deposition). In addition, when the amorphous silicon is formed or after the formation of the dehydrogenation process may be carried out to lower the concentration of hydrogen. The crystallization method is a RTA (Rapid Thermal Annealing) process, SPC (Solid Phase Crystallization), ELA (Excimer Laser Crystallization), MIC (Metal Induced Crystallization), MILC (Metal Induced Lateral Crystallization) or SLS (Sequential Lateral) Solidification) may be used.

Subsequently, a gate insulating layer 315 is formed on the entire surface of the substrate 300 on which the semiconductor layer 310 is formed.

Subsequently, a conductor layer is formed on the substrate 300 and patterned to form a gate electrode 320 on the gate insulating layer 315 corresponding to the semiconductor layer 310 of the pixel portion A. A common power supply line 365 is formed at the outermost part of (B).

In this case, after the process of forming the gate electrode 320, an impurity implantation process may be performed on the semiconductor layer 310 to form a source / drain region.

Subsequently, an inorganic insulating film such as a silicon oxide film, a silicon nitride film, or a multilayer thereof is formed on the entire surface of the substrate 300 to form a first insulating film 325 which is an interlayer insulating film.

Referring to FIG. 3B, the gate insulating layer 315 and the first insulating layer 325 corresponding to the source / drain regions of the semiconductor layer 310 are etched to expose the source / drain regions of the semiconductor layer 310. After forming a conductive layer on the entire surface of the substrate, patterning the conductive layer to form a source / drain electrode 330 on the pixel portion A, and forming a cathode on the inner region of the common power line 365 of the peripheral portion B. Bus line 360 is formed.

Referring to FIG. 3C, the second insulating layer 335 is formed on the entire surface of the substrate using an organic material, such as spin coating.

Subsequently, the second insulating layer 335 is patterned to form a via hole V exposing a portion of the source / drain electrode 330 of the pixel portion A, and the cathode bus line 360 of the peripheral portion B is formed. The first trench T1 exposing a part of the first insulating layer 325 is formed in the inner region of the C), and the first contact holes C1 exposing a part of the cathode bus line 360 are formed.

In this case, the second insulating layer 335 may be a protective layer that protects lower elements such as the thin film transistor or the cathode bus line 360, or may be a planarization layer for removing the step difference caused by the lower elements.

Referring to FIG. 3D, a conductor layer is formed on the entire surface of the substrate on which the second insulating layer 335 is formed, and then patterned to form a first electrode 340 on the pixel portion A. The peripheral portion The first conductive layer 370 in contact with the first insulating layer 325 exposed by the first trench T1 and the cathode bus line 360 exposed by the first contact hole C1 is formed on (B). To form.

In this case, the first conductive layer 370 may be formed of the same material as the first electrode 340. In general, a transparent conductor such as indium tin oxide (ITO) or indium zinc oxide (IZO), and Ag may be used. Or a structure including a reflective film such as Al (for example, the upper portion is ITO or IZO / the lower portion is Ag or Al). At this time, the first electrode 340 and the first conductive layer 370 is preferably formed of a structure of ITO / Ag / ITO.

Referring to FIG. 3E, the third insulating layer 345 is formed of an organic material on the entire surface of the substrate on which the first electrode 340 and the first conductive layer 370 are formed by spin coating.

Subsequently, the third insulating layer 345 is patterned to form a pixel definition layer exposing the first electrode 340 on the pixel portion A, and formed on the first trench T1 on the peripheral portion B. A second trench T2 exposing the first conductive layer 370 is formed, and a second contact hole C2 exposing the first contact holes C1 is formed.

In this case, the second trench T2 is formed to expose the bottom of the first trench T1, but if necessary, the second trench T2 is formed to expose the entirety of the first trench T1 to form the second trench T2. It is also possible to minimize the step difference. That is, the second trench T2 may be formed in the same form as forming the second contact hole C2.

Referring to FIG. 3F, a conductor layer is formed on the entire surface of the substrate, and patterned to form a second electrode on the pixel portion A, and exposed on the peripheral portion B by the second trench T2. A second conductive layer 375 is formed to contact the first conductive layer 370 and the first conductive layer 370 exposed by the second contact hole C2.

At this time, the second electrode and the second conductive layer is preferably formed of Mg, Ag, Ca, a mixture thereof or a plurality of layers thereof.

Therefore, according to the present invention, the first and second trenches may be formed in the second and third insulating layers, which are the organic layers, to prevent oxygen or moisture from moving to the pixel portion through the second and third insulating layers.

In addition, the contact failure between the second electrode and the cathode bus line due to the step generated by forming the first trench and the second trench can be solved by contacting the oxygen or moisture in the region where the trenches are formed once more. .

The present invention has been shown and described with reference to the preferred embodiments as described above, but is not limited to the above embodiments and those skilled in the art without departing from the spirit of the present invention. Various changes and modifications will be possible.

Therefore, the organic light emitting display device and the manufacturing method thereof according to the present invention can not only prevent oxygen or moisture from diffusing into the pixel portion through the organic film, but also can solve the problem of poor second electrode wiring easily caused by a step. There is.

Claims (13)

Board; An organic layer disposed on a predetermined area on the substrate and defined by a first signal line and a second signal line, the first electrode being electrically connected to the first signal line and the second signal line, and an organic layer on the first electrode and including a light emitting layer And a pixel unit including a plurality of unit pixels including a second electrode on the organic layer. A second insulating layer surrounding the pixel portion and positioned on the first insulating layer, the second insulating layer including a first trench exposing a predetermined region of the first insulating layer; A first conductive layer on the first trench; A third insulating layer on the second insulating layer, the third insulating layer including a second trench exposing a predetermined region of the first conductive layer; And A second conductive layer in contact with the first conductive layer and positioned on the second trench An organic light emitting display device comprising: a. The method of claim 1, And the first insulating layer is an inorganic insulating layer. The method of claim 1, And the second insulating layer and the third insulating layer are organic layers. The method of claim 1, And the first conductive layer is formed of the same material as the first electrode of the unit pixel. The method of claim 1, The second conductive layer is formed of the same material as the second electrode of the unit pixel. The method of claim 1, And a cathode bus line in contact with the second conductive layer extending in the outer regions of the first trench and the second trench. The method of claim 6, And a first conductive layer on the first trench extending between the second conductive layer and the cathode bus line. The method of claim 6, And the cathode bus line is formed of the same material as that of the first conductive layer. The method of claim 6, And a gate driver connected to a first signal line under the cathode bus line. Prepare the substrate, Forming a thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode, a first insulating film, and a source / drain electrode on the pixel portion of the substrate, Forming a second insulating film on the substrate, A portion of the second insulating layer is etched to enclose a via hole exposing the source / drain electrodes and an outer periphery of the pixel portion, and to form a first trench exposing the first insulating layer; Depositing a first electrode forming material on the substrate and patterning the first electrode forming material to form a first electrode contacting the source / drain electrode through the via hole and a first conductive layer covering the first trench, After forming a third insulating film on the substrate, patterning it to form a pixel definition film on the pixel portion, and forming a second trench in the region where the first trench is formed to expose the first conductive layer, Forming an organic layer including at least an emission layer on the first electrode of the pixel portion, Forming a second electrode in contact with the organic layer on the substrate and a second conductor layer in contact with the first conductor layer An organic light emitting display device manufacturing method comprising a. The method of claim 10, And the second insulating layer and the third insulating layer are organic insulating layers. Prepare the substrate, A thin film transistor including a semiconductor layer, a gate insulating film, a gate electrode, a first insulating film, and a source / drain electrode on a pixel portion of the substrate, and a cathode bus line of the same material as the source / drain electrode on a predetermined region outside the pixel portion; Form the Forming a second insulating film on the substrate, A portion of the second insulating layer is etched to expose the source / drain electrodes, a via hole surrounding the pixel portion, and a first trench for exposing the first insulating layer and an outer portion of the first trench for exposing the cathode bus line. Forming a first contact hole, After depositing a first electrode forming material on the substrate, patterning the first electrode forming material and the first electrode and the first trench and the cathode bus line in contact with the source / drain electrode through the via hole to contact the first contact hole Forming a covering first conductive layer, After forming a third insulating film on the substrate, patterning it to form a pixel defining film on the pixel portion, and in contact with the second trench and the cathode bus line to expose the first conductive layer in the region where the first trench is formed. Forming a second contact hole exposing the first conductive layer to Forming an organic layer including at least an emission layer on the first electrode of the pixel portion, Forming a second conductive layer in contact with the organic layer and the first conductive layer on the entire surface of the substrate An organic light emitting display device manufacturing method comprising a. The method of claim 12, And the second insulating layer and the third insulating layer are organic insulating layers.

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