KR20070109274A - Plasma generation apparatus for uniformly generating large scale inductively coupled plasma - Google Patents

Abstract

A plasma generator for uniformly generating large-scale inductively coupled plasma is provided to facilitate deposition of a silicon nitride film, a silicon oxide film, and poly silicon at low temperature and to prevent unnecessary discharge around a gas injector by grounding the gas injector while the gas injector is electrically insulated from an antenna module. A plasma generator(100) for uniformly generating large scale inductively coupled plasma includes a chamber(110) for forming a predetermined reaction space and having a substrate placing plate(120); a gas injector(140) installed on the upper part of the substrate placing plate in the chamber; a plasma generating source installed through the gas injector; and a power supply unit(160) positioned at the outer side of the chamber and connected to the plasma generating source.

Description

Plasma generation apparatus for uniformly generating large area inductively coupled plasma

1A and 1B show a general configuration of a CCP plasma generator and an ICP plasma generator, respectively.

2 is a block diagram of a plasma generating apparatus according to an embodiment of the present invention

3 is a view showing an insulating member installed between a toroidal antenna module and a gas injection device;

Figure 4 is a bottom view showing the installation of the gas injection device

5 is a view showing a state in which the gas injection port density of the gas injection device differs depending on the area;

6 is a view showing the installation of another type of gas injection device in the plasma generating apparatus according to an embodiment of the present invention

7 is a view showing the installation of another type of gas injection device in the plasma generating apparatus according to an embodiment of the present invention

8 is a cross-sectional view showing the configuration of a toroidal antenna module

* Description of the symbols for the main parts of the drawings *

100: plasma generator 110: chamber

112: chamber lid 120: substrate support

130: toroidal antenna module 140: gas injection device

141: fuselage 142: diffusion space

143 gas injection port 144 diffuser plate

146: intermediate plate 147: through part

148: gas supply pipe 149: insulating member

150: opening 160: power supply

170: exhaust port

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a plasma generating apparatus used for the manufacture of a flat panel display (FPD), and more specifically to uniformly high-density plasma by using a toroidal antenna module and a showerhead type gas jet. It relates to an inductively coupled plasma generator that can generate.

In addition, the present invention is applicable to deposition of next-generation display devices such as organic EL deposition and flexible displays, and in particular, plasma which can be used for sealing of a lower layer and for sealing devices. It relates to a generator.

Conventional cathode ray tube (CRT) has a disadvantage of heavy and bulky liquid crystal display (LCD), plasma display panel (PDP), organic light emitting diode device (Organic Light Emitting Diode Device) Flat display devices such as OLEDs are widely used.

In order to manufacture such a flat panel display device, a thin film transistor, an electrode, a color filter, a light emitting layer, or the like must be formed by performing a process such as thin film deposition, photolithography, and etching on a substrate serving as a base material.

In addition, such a process proceeds inside a substrate processing apparatus designed for an optimal environment for a corresponding process, and recently, a plasma generating apparatus capable of realizing excellent process uniformity in a relatively low temperature environment using plasma has been widely used.

In general, a plasma generator is divided into a capacitively coupled plasma (CCP) type and an inductively coupled plasma (ICP) type according to an RF power application method.

CCP type, as can be seen in the Plasma Enhanced Chemical Vapor Deposition (PECVD) apparatus 10 of FIG. 1A, the substrate stabilizer 12 and the RF electrode 14 are installed to face each other inside the chamber 11, and the RF electrode ( At the bottom of 14), a gas distribution plate 13 is installed. The RF power source 14 is connected to the RF electrode 14 via the matching circuit 17, while the gas supply pipe 15 is connected to the center portion thereof.

However, the capacitively coupled plasma has a high risk of damaging the inside of the substrate or the chamber by applying ion bombardment to the substrate or the inner member of the chamber due to the high ion energy.

In addition, since the showerhead-type gas distribution plate 13 has the same potential as the RF electrode 14, abnormal discharge such as arching occurs around the gas distribution plate 13, thereby damaging the substrate or the inside of the chamber. This is high.

In addition, when the showerhead type gas distribution plate 13 has the same potential as the RF electrode 14, when the frequency of the applied RF power is high, the potential of the surface of the showerhead type gas distribution plate 13 depends on the position. This can be very different, and there are restrictions on using high frequency RF power.

FIG. 1B illustrates a general configuration of an ICP type plasma generator, specifically, an HDPCVD (High Density Plasma CVD) apparatus 20, in which a coiled RF antenna 25 is located outside the chamber 21. The plasma is generated inside the chamber by the electric field induced by the antenna 25.

The coiled RF antenna 25 is connected to the RF power supply 26 via the matching circuit 27, and a plurality of injectors 23 for injecting gas into the upper portion of the substrate support 22 are symmetrical on the inner wall of the chamber. Is installed as

The reason why the injector 23 is installed in this way is that if the gas distribution plate is installed in the lower portion of the coil type RF antenna 25, it may not only disturb the flow of the induced electric field but also cause abnormal discharge such as arcing inside the gas distribution plate. Because there is.

In addition, in order to block generation of the capacitively coupled plasma by the RF antenna 25, the upper part of the chamber is sealed with a non-conductive insulator 24, and the insulator 24 has a dome or flat plate shape.

By the way, the ICP type plasma generator 20 generates a much higher density of plasma than the CCP type. However, since the coil type RF antenna 25 is used, it is difficult to form and maintain a uniform plasma as the substrate size increases. have.

An object of the present invention is to provide a gas injection device capable of greatly improving plasma density and uniformity in a plasma generating apparatus for processing a large area substrate.

Claim 1 of the present invention, to achieve the above object, to form a constant reaction space, the chamber including a substrate stabilizer therein; A gas injection device installed above the substrate stabilizer in the chamber; A plasma generation source installed through the gas injection device; Provided is a plasma generating device including a power supply which is located outside the chamber and is connected to the plasma generating source.

2. The plasma generating apparatus of claim 1, wherein the gas injection apparatus comprises: a body having a diffusion space therein and a plurality of gas injection holes formed on a lower surface thereof; And a gas supply pipe passing through the chamber and connected to the body.

The plasma generating apparatus of claim 2, wherein at least two gas supply pipes are connected to the fuselage.

Claim 4 is characterized in that the plasma generating apparatus of claim 2, characterized in that the diffusion plate which serves to diffuse the gas in the front of the outlet of the gas supply pipe inside the fuselage.

Claim 5 is characterized in that in the plasma generating apparatus of claim 2, an intermediate plate having a plurality of penetrations is provided in the fuselage half of the diffusion space up and down.

The plasma generating apparatus of claim 5, wherein the through part has a diameter distribution larger than that of the gas injection port and smaller than that of the gas injection port.

The plasma generating apparatus of claim 2, wherein the gas injection port has a diameter of 0.1 mm or more and 5 mm or less.

The plasma generating apparatus of claim 2, wherein the density of the gas ejection openings of the first region adjacent to the plasma generation source at the lower surface of the gas ejection apparatus is higher than the density of the gas ejection openings of the second region surrounding the first region. It features.

The plasma generating apparatus of claim 1, wherein the plasma generating source generates the plasma by an inductive coupling method.

10. The plasma generating apparatus of claim 9, wherein the plasma generating source includes the toroidal core therein and has an opening having an inner circumferential surface penetrating through the toroidal core, wherein the opening is the gas injection apparatus. An antenna housing installed to penetrate the gas injection unit so as to protrude to a lower portion of the antenna housing; A toroidal antenna module comprising an induction coil wound around the toroidal core while being connected to the power supply unit.

The plasma generating apparatus of claim 10, wherein the toroidal core and the gas injection apparatus are electrically insulated from each other.

12. The plasma generating apparatus of claim 11, wherein an insulating member is provided at a boundary between the gas injection apparatus and the antenna housing.

The plasma generating apparatus of claim 10, wherein the boundary between the antenna housing and the gas injection apparatus is sealed by a sealing means.

Claim 14 is the plasma generating apparatus of claim 10, characterized in that two or more toroidal antenna modules are installed.

In addition, claim 15 of the present invention, forming a constant reaction space, the chamber including a substrate stabilizer therein; A gas injection device for injecting a gas perpendicular to the substrate stabilizer in the chamber; A plasma generator for forming an induction electric field horizontally with respect to the substrate stabilizer; Provided is a plasma generating device including a power supply which is located outside the chamber and is connected to the plasma generating source.

16. The plasma generating apparatus of claim 15, wherein the gas injection apparatus and the plasma generating source are located on an upper portion of the substrate stabilizer.

17. The plasma generating apparatus of claim 15, wherein the plasma generating source is installed through the gas injection device.

18. The plasma generating apparatus of claim 17, wherein at least two plasma generating sources penetrate the gas injection apparatus.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

2 illustrates a plasma generating apparatus 100 according to an exemplary embodiment of the present invention, wherein a substrate stabilizer 120 is installed in a chamber 110 forming a predetermined reaction space, and the lower portion of the chamber 110 is provided. An exhaust port 170 is formed therein.

The toroidal antenna module 130 having an opening 150 is coupled to the chamber lead 112 through the chamber lead 112, and an RF necessary for generating a plasma in the toroidal antenna module 130 is disposed on the upper portion of the chamber lead 112. A power supply unit 148 for supplying power is installed.

A gas injection device 140 is positioned inside the chamber below the chamber lid 112, and the toroidal antenna module 130 has a gas injection device such that the opening 150 is exposed to the lower part of the gas injection device 140. It is coupled through the 140.

In the conventional ICP plasma generating apparatus, it was technically difficult to provide a showerhead type gas injection device facing the substrate support on the substrate support where the antenna, which is the ICP plasma generation source, is located.

This is because when the shower head type gas injection device is provided, the inside of the chamber where the antenna and the plasma are formed is separated by the gas injection device, which causes a problem that the generation density of the plasma and the power efficiency are lowered.

However, when the toroidal antenna module 130 is used as in the present invention, it is possible to install the gas injection unit along with the ICP plasma generation source at a position opposite to the substrate stabilizer.

The toroidal antenna module 130 connects an induction coil to a toroidal core made of ferromagnetic material such as ferrite and iron powder, and an induction magnetic field generated by the induction coil is formed in the toroidal core located inside the chamber. By providing a magnetic flux path, the RF power loss can be minimized to generate a high density plasma like a typical ICP device where the RF antenna is located outside the chamber.

In addition, since the direction of the opening 150 is perpendicular to the substrate of the toroidal antenna module 130, the induction electric field is generated horizontally with respect to the substrate.

Although only two toroidal antenna modules 130 are shown in FIG. 2, the number of toroidal antennas may vary depending on the size or process characteristics of the chamber.

In addition, although all the openings 150 of the antenna module 130 are shown in the drawing, this is for convenience of description only and the direction of the openings 150 may be individually adjusted according to the plasma characteristics in the chamber.

In addition, each toroidal antenna 130 may be connected to one power supply unit 160, or may be connected to independent power sources.

A more detailed configuration of the toroidal antenna module 130 will be described later with reference to FIG. 8.

The gas injection device 140 has a flat hexahedron shape having a diffusion space 142 therein, and passes through the fuselage 141 and the chamber lid 112 having a plurality of gas injection holes 143 on the bottom thereof. It is configured to include a gas supply pipe 148 connected to the upper portion of the (141). The body 141 is preferably made of a material such as aluminum alloy having strong oxidation resistance. If necessary, the body 141 may be subjected to a surface treatment such as anodizing the surface.

The toroidal antenna module 130 is coupled through the body 141 of the gas injection device 140, and the toroidal core of the body 141 and the toroidal antenna module 130 are electrically insulated from each other. The body 141 is more preferably grounded.

The insulation method includes a method of manufacturing the antenna housing surrounding the toroidal core of the toroidal antenna module 130 with an insulating material such as ceramic, and the toroidal antenna module 130 and the gas as shown in FIG. 3. There is a method of installing the insulating member 149 at the boundary of the injection device 140. As a result, arcing or unnecessary discharge may be prevented from occurring around the gas injection device 140.

A diffusion plate 144 is installed at the front of the outlet of the gas supply pipe 148 to more uniformly diffuse the gas introduced therein, so that the gas introduced through the gas supply pipe 148 is hit by the diffusion plate 144. In the periphery of the diffusion space 142.

The gas injection port 143 is selected between 0.1mm and 5mm, the density distribution of the gas injection port 143 is easy to form a uniform uniform as shown in Figure 4, a cross-sectional view taken along the line I-I of FIG. Do.

However, since there is no gas injection port 143 in the portion of the gas injection device 140 to which the toroidal antenna module 130 is coupled, it is necessary to supply more gas in consideration of the plasma uniformity.

To this end, as shown in FIG. 5, the gas injection port 143 is more densely formed in the first area A adjacent to the toroidal antenna module 130 on the lower surface of the gas injection device 140 and the first area ( It may be less dense in the second region B surrounding A).

The boundary between the gas injection device 140 and the toroidal antenna module 130 is preferably sealed using a sealing means such as an O-ring (not shown). As described above, the gas injection device 140 and the toroidal antenna module 130 are sealed. An insulating member 149 for insulating the antenna module 130 may be additionally installed.

In the case of processing a large-area substrate, in the conventional ICP apparatus, a plurality of injectors should be symmetrically installed on the inner wall of the chamber in order to improve the uniformity of plasma. However, in the plasma generating apparatus of the present invention, the showerhead type gas injection apparatus 140 is By using this, a large-area plasma can be generated more uniformly, and a large number of injectors can be omitted, thereby simplifying the device configuration.

On the other hand, the above has been described a case in which one gas supply pipe 148 is connected to the gas injection device 140, but as the substrate is larger, the gas introduced from one gas supply pipe 148 inside the gas injection device 140 It is not easy to spread evenly to the edge region. In particular, the toroidal antenna module 130 coupled through the gas injection device 140 may be an obstacle preventing the diffusion of gas.

In view of this, when processing a large area substrate, it is preferable to provide at least two or more gas supply pipes symmetrically with each other.

In FIG. 6, the first gas supply pipe 148a is connected to the center of the gas injection device 140, and the second and third gas supply pipes 148b and 148c are symmetrical with respect to the connection position of the first gas supply pipe 148a. To a remote location.

It is preferable that first, second and third diffusion plates 146a, 146b and 146c respectively serve to diffuse the gas introduced into the outlets of the first, second and third gas supply pipes 148a, 148b and 148c. .

At this time, the flow rate of the gas supplied through each gas supply pipe (148a, 148b, 148c) may be individually controlled in consideration of the number of the gas supply pipe or the size of the gas supply device 140.

FIG. 7 shows an intermediate plate 146 provided inside the gas injection device 140 instead of using the diffusion plates 146a, 146b and 146c to diffuse the gas supplied from the gas supply pipes 148a, 148b and 148c. As a result, the diffusion space 142 is divided into two parts.

The intermediate plate 146 is in the form of a square plate having a plurality of through portions 147, the edge is preferably fixed to the inner wall of the gas injection device 140.

Since the intermediate plate 146 is to diffuse the gas in advance in the gas injection device 140 so that the gas can be more uniformly injected into the chamber, the through part 147 is a lower gas injection hole 143 Compared to the larger diameter, the distribution density is much smaller.

Therefore, the gas introduced through the gas supply pipe is first diffused in the upper portion of the intermediate plate 146 of the gas injector 140, and then flows downward through the through part 147 of the intermediate plate 146. 146) after the second diffusion in the lower portion is finally injected into the chamber through the gas injection port (143).

Such an intermediate plate 146 is not installed only when a plurality of gas supply pipes 148a, 148b, and 148c are connected as shown, and is installed even when one gas supply pipe 148 is connected as shown in FIG. Of course it can be.

Hereinafter, the configuration of the toroidal antenna module 130 will be described in more detail with reference to FIG. 8.

The toroidal antenna module 130 has a toroidal core 132, an antenna housing 131 that fixes the toroidal core 132 and is isolated from plasma, and the toe inside the antenna housing 131. It consists of an induction coil 139 to be coupled to the Lloyd core 132, an antenna cover 137 to be coupled to the upper portion of the antenna housing 131.

The antenna housing 131 has a U-shaped cross section as a whole and is made of an aluminum alloy or ceramic material having excellent heat resistance and oxidation resistance because it is in contact with the process gas inside the chamber, and is made of an electrical insulating material as necessary. In addition, the antenna housing 131 is formed with an antenna opening 150 inserted into the opening of the toroidal core 132.

The inside of the antenna housing 131 maintains an atmospheric pressure state to prevent the generation of plasma, and since the outside of the antenna housing 131 is a chamber interior space in a high vacuum state, a vacuum seal should be installed in the antenna housing 131.

A cylindrical toroidal fixing end 133 is formed on the inner circumferential surface of the antenna opening 150, and the toroidal core 132 is fitted into the toroidal fixing end 133 to be fixed.

A coolant passage 135 is formed on the sidewall of the antenna housing 131, and a coolant inlet port 136a is coupled to one end of the coolant passage 135, and a coolant outlet port 136b is coupled to the other end thereof. The coolant inlet port and the coolant outlet port 136a and 136b are respectively connected to an external coolant storage unit through a coolant inlet tube / outlet tube (not shown).

The refrigerant passing through the refrigerant passage 135 may be arbitrarily selected from liquid or gas, but in the case of liquid refrigerant, the refrigerant passage 135 should be manufactured as a closed path so that liquid does not leak into the antenna housing 131. .

The antenna cover 137 coupled to the upper portion of the antenna housing 131 isolates the toroidal core 132 inside the housing from the outside to prevent contamination, and the RF power supply terminal 138a and the ground terminal 138b are Is installed.

The RF power supply terminal 138a and the ground terminal 138b are connected to one end and the other end of the induction coil 139 wound on the toroidal core 132 inside the antenna housing 131, respectively, and the antenna housing 131 Externally connected to the power supply line connected to the power supply unit 160.

On the other hand, since the antenna housing 131 is a conductive material such as aluminum, the antenna cover 137 is made of an insulating material so that the induction coil 139 or the power supply line can be insulated from the antenna housing 131.

The housing latching jaw 134 protruding from the upper portion of the antenna housing 131 is for fixing the toroidal antenna module 130 to the chamber lid 112, and using a bolt around the housing latching jaw 134. A through hole 134a for fixing to the chamber lead 112 is formed.

Of course, a vacuum seal should also be formed between the antenna housing 131 and the chamber lid 112.

According to an embodiment of the present invention, since the plasma density and uniformity can be greatly improved in the plasma generating apparatus, it is advantageous to process a large area substrate, and particularly, a silicon nitride film requiring excellent film quality and high deposition uniformity at low temperature , Silicon oxide film, polysilicon and the like can be easily deposited.

In addition, since the gas injection device of the present invention is grounded while being electrically insulated from the antenna module, unnecessary discharge can be prevented around the gas injection device.

In addition, since there is no need to install a plurality of injectors in the periphery of the substrate stabilizer, the larger the substrate, the simpler the structure of the device than the substrate processing apparatus using the injector.

Claims (18)

A chamber forming a constant reaction space and including a substrate stabilizer therein; A gas injection device installed above the substrate stabilizer in the chamber; A plasma generation source installed through the gas injection device; A power supply unit located outside the chamber and connected to the plasma generation source; Plasma generator comprising a The method of claim 1, The gas injection value, A body having a diffusion space therein and having a plurality of gas injection holes formed thereon; A gas supply pipe passing through the chamber and connected to the body; Plasma generator comprising a The method of claim 2, At least two gas supply pipes are connected to the fuselage. The method of claim 2, Plasma generator that is installed in the fuselage in front of the outlet of the gas supply pipe to diffuse the gas inside the fuselage The method of claim 2, The plasma generating apparatus is provided with an intermediate plate having a plurality of through parts and dividing the diffusion space up and down inside the fuselage. The method of claim 5, The penetrating portion has a diameter larger than that of the gas injection port and has a density distribution smaller than that of the gas injection port. The method of claim 2, The gas injection port is a plasma generating device having a diameter of 0.1mm or more and 5mm or less The method of claim 2, In the lower surface of the gas injection device, the density of the gas injection port in the first area adjacent to the plasma generation source is higher than the density of the gas injection port in the second area surrounding the first area. The method of claim 1, The plasma generator is a plasma generator for generating a plasma in an inductive coupling method The method of claim 9, The plasma generation source, An antenna housing having a toroidal core therein and having an opening having an inner circumferential surface penetrating the toroidal core, the antenna housing being installed through the gas injection device such that the opening protrudes below the gas injection device; An induction coil connected to the power supply and wound around the toroidal core; Toroidal antenna module comprising a plasma generating device The method of claim 10, The toroidal core and the gas injection device is electrically insulated plasma generator The method of claim 11, Plasma generator that is provided with an insulating member at the boundary between the gas injection device and the antenna housing The method of claim 10, A boundary between the antenna housing and the gas injection device is sealed by a sealing means The method of claim 10, Two or more toroidal antenna modules are installed plasma generating apparatus A chamber forming a constant reaction space and including a substrate stabilizer therein; A gas injection device for injecting gas perpendicular to the substrate stabilizer in the chamber; A plasma generator for forming an induction electric field horizontally with respect to the substrate stabilizer; A power supply unit located outside the chamber and connected to the plasma generation source; Plasma generator comprising a The method of claim 15, The gas injector and the plasma generating source are located on top of the substrate stabilizer The method of claim 15, The plasma generating source is installed through the gas injection device plasma generating apparatus The method of claim 17, At least two plasma generating sources penetrate the gas injection apparatus;

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