KR20070099381A - Heat treatment furnace of preparing flat display panel, manufacturing device and method of flat display panel including the same, and flat display panel prepared thereby - Google Patents

Abstract

A heat treatment furnace for manufacturing a flat display panel, a flat display panel manufacturing apparatus including the same, a manufacturing method of the same, and a flat panel display device using the same are provided to improve performance of a material layer by lowering resistance of the material layer. A heat treatment furnace includes a magnetron(301), a waveguide(302), and a discharge tube(305). The magnetron is formed to generate microwaves. The waveguide is formed to transmit the microwaves generated from the magnetron. The discharge tube is formed to generate plasma by using the microwaves transmitted through the waveguide and gas supplied through a gas supply unit. The discharge tube is formed to irradiate the plasma onto a structure for manufacturing a flat panel display device.

Description

Heat treatment furnace for manufacturing a flat panel display device, a flat panel display device manufacturing apparatus including the same, a method for manufacturing the same, and a flat panel display device using the same DISPLAY PANEL PREPARED THEREBY}

1 is a system schematic diagram of a microwave plasma system applied to a heat treatment furnace for manufacturing a flat panel display device (FDP) of the present invention.

Figure 2 is a schematic diagram of an embodiment of an FDP manufacturing apparatus including a heat treatment furnace for manufacturing FDP of the present invention.

3A to 3B are graphs showing the relationship between the horizontal and vertical distances from the discharge tube and the temperature at which the substrate is heated in the microwave plasma system applied to the heat treatment furnace for manufacturing an FDP of the present invention. (FIG. 3a is a vertical distance, FIG. 3b is a horizontal distance)

Figure 4 is a graph showing the relationship between the flow rate and the temperature of the gas flowing into the discharge tube in the microwave plasma system applied to the heat treatment furnace for manufacturing FDP of the present invention. (The temperature at which the substrate is heated after 10 cm from the end of the discharge tube is expressed as the distance from the center of the discharge tube.)

FIG. 5 is a view showing an embodiment in which microwave plasma discharge tubes are arranged in parallel for a large area treatment in a heat treatment furnace for manufacturing a FDP panel of the present invention.

FIG. 6 is a graph showing a temperature distribution received by a substrate in the heat treatment furnace having the configuration of FIG. 5.

Explanation of symbols on the main parts of the drawings

301: magnetron 302: waveguide

303: triple bar tuner 304: gas supply device

305: discharge tube (plasma torch) 306: microwave plasma

401: drying furnace 402: heat treatment furnace (firing furnace)

403: cooling unit 404: panel for FPD (glass substrate)

405: plasma torch 406: panel return rail for FPD

The present invention relates to an FDP that is a panel for FPD using microwave plasma, that is, a heat treatment furnace for manufacturing a flat panel display device, a substrate manufacturing apparatus and a manufacturing method, and a flat panel display device using the same. The process progresses to a continuous system such as a conveyor, so that the waiting time can be reduced by reducing the waiting time, improving the yield and reducing the cost, and being exposed to a higher temperature than the process using a conventional heat treatment furnace. This drastically reduces the damage of the substrate and the material layer due to the thermal expansion and thermal contraction of the substrate due to the high temperature process, thereby reducing the defect rate and increasing the density of the material layer, thereby improving the performance of the material layer. Heat treatment furnace for manufacturing a flat panel display device including the flat panel display device manufacturing apparatus and the flat panel including the same A method of manufacturing a display device, and a flat panel display device manufactured using the same.

In general, a flat display panel used in various flat panel display devices (FPD) including a plasma display panel (PDP), an organic and inorganic light emitting display device (ELD), a liquid crystal display device (LCD), and the like is used. Depending on the characteristics and characteristics, a paste or metal coated substrate of various materials is used.

In the method of using such a paste, a paste is applied to a substrate by printing or the like to form a thick paste layer on the substrate, and then the paste layer is formed into a structure required for the substrate through a drying and baking process or a photolithography method. After applying to form a pattern and dried it is a method of firing. However, the conventional firing process is an indirect heating method in which the entire firing furnace is heated to transfer heat to the substrate to burn the paste. Since sodium carbonate glass is mainly used as a panel for a flat panel display element, the firing temperature should be maintained below 600 ° C. Therefore, efforts have been made to lower the firing temperature with the development of new pastes, but still require high temperatures above 500 ° C. (See Korean Patent Publication No. 2005-0114408)

In addition, the time required for the firing process is about 10 to 30 minutes, and it is difficult to secure the continuity of the process for treating individual substrates.

As an alternative, dielectric heating using microwaves has been proposed. Dielectric heating can selectively heat materials that absorb microwaves without raising the ambient temperature. The time taken for firing is only half of the existing process. In addition, since the paste is effectively heated from the inside, instead of being heated from the outside, the density of the paste is increased, and the resistance of the electrode is decreased during electrode production. Electrode density has the advantage that it can be adjusted by microwave output or irradiation time.

However, dielectric heating requires an additional insulating material obtained by sintering silica particles having low microwave absorption rate as a support for the substrate, and the microwave is not uniformly irradiated onto the substrate due to the characteristics of the microwave. If the microwave is not uniformly irradiated onto the substrate and the microwave is locally concentrated, a part of the paste remains unbaked, or some of the paste is excessively heated, resulting in discharge, resulting in carbonization of the paste and disconnection of the electrode. .

In order to uniformly irradiate the microwave to the substrate, a metal reflective wing (see Japanese Patent Laid-Open No. 2005-172371), or a method using a spherical reflector or a metal reflective member (see Korean Patent Laid-Open No. 1999-015474) have.

In the former method, the method of reflecting and diffusing the microwaves with the reflecting blades made of metal is required to seal the kiln to ensure the uniformity of the microwave in the kiln, so the chamber is opened and the panel is sealed. It is difficult to secure the continuity of the process because it is necessary to open the chamber again after removing the panel, and the whole inside of the chamber should be made of a material having low microwave absorption rate.

The latter method, using a spherical reflector or a metal reflective member, considers the deflection angle of the reflector and the deflection angle of the reflective member in consideration of the microwave output, the distance between the magnetron and the reflective member, and the distance from the reflective member to the substrate. You must decide. In addition, when the wavelength of the microwave is λ / 4 reaches the paste, effective heating is achieved, and there are many difficulties in controlling it.

When the electrode is formed by using a conventional firing furnace, the firing process is performed for at least 10 minutes at a high temperature of 500 to 600 ° C., so that thermal damage to the substrate occurs even if a special thermally strengthened glass is used. Since the baking process takes more than 10 minutes, it is difficult to secure the continuity of the process. In addition, even if the continuity of the process is secured by using a plurality of firing furnaces, there is a limit to deal with the enlargement of the substrate. The paste is heated and melted from the surface because it is fired by the heat applied to the external rotor. Therefore, it takes some time to heat the internal paste, and this time is the time taken for the firing process. If the internal paste is not melted, the density of the electrode may be reduced, which may increase the resistance of the electrode.

As a method of using a metal-coated substrate, in general, a method of applying a metal to a substrate uses a method of vapor deposition using a sputter process. Sputtering is a method of depositing molecules or atoms on the material surface by using plasma to deposit various metals and is mainly used to obtain a film of a high melting point material, but since the deposition is performed at low vacuum, the Ar particles are the largest atoms. It reaches a concentration ratio of 2% and oxygen is adsorbed on the grain boundary, which increases resistance through scattering around the grain. Therefore, there is a problem in that the resistance of the metal layer is reduced in density. That is, since the metal film obtained by sputtering has a problem of having a higher resistance value than the original material, a situation in which uniformity treatment is required to reduce the uniformity of the density by performing heat treatment to improve it.

Therefore, there is an urgent need for the development of a heat treatment furnace that can continuously process the heat treatment process of the panel and continuously provide the finished heat treatment panel, and a panel heating method that can perform such heat treatment process in a short time.

In order to solve the problems of the prior art as described above, the present invention can proceed the heat treatment of the structure forming material layer formed on the flat panel display element substrate in an open chamber as well as hermetic, and greatly reduce the heat treatment time through instant heating, A heat treatment for manufacturing a flat panel display device having an effect of reducing damage, improving yield, and improving the density of a material layer, thereby improving the performance of a formed structure, comprising: a flat panel display device manufacturing apparatus and a method of manufacturing the flat panel display device including the same Its purpose is to provide a flat panel display device manufactured using the same.

In order to achieve the above object, the present invention

In the heat treatment furnace for manufacturing a flat panel display element which forms a required structure by heat-treating the structure forming material layer formed in the panel for flat panel display element manufacture,

The heat treatment furnace

Magnetrons that generate microwaves;

A waveguide for transmitting microwaves generated by the magnetron; And,

And a discharge tube for forming the microwave plasma through the microwaves delivered through the waveguide and the gas supplied from the gas supply device, and discharging the formed plasma to be irradiated onto the panel on which the material layer is formed. Provided is a heat treatment furnace for manufacturing a flat panel display device (FDP).

In another aspect, the present invention provides a flat panel display device (FDP) manufacturing apparatus comprising the heat treatment furnace for manufacturing the FDP.

In addition to the present invention

In the method for manufacturing a flat panel display device (FDP), wherein the structure forming material layer for manufacturing a flat panel display device (FDP) is subjected to a drying process for removing organic matters on the formed panel, and then the material layer is heat-treated to form a structure.

The heat treatment is a method of manufacturing a flat panel display device (FDP) characterized in that the microwave plasma is irradiated to the substrate to heat the structure forming material layer.

Finally, the present invention

In the flat panel display element used for the flat panel display device,

Provided is a flat panel display device, which is manufactured by the method for manufacturing the flat panel display device.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

The present invention relates to a heat treatment furnace for manufacturing FDP, the heat treatment furnace for manufacturing FDP in which a required structure is formed by heat treatment (firing) to the layer of the material for forming a structure formed on the panel for manufacturing the FPD, the heat treatment furnace generates a microwave The magnetron 301, the waveguide 302 for delivering the microwave generated from the magnetron 301 (preferably to the discharge tube 305), and the microwave and gas supply device delivered through the waveguide 302 And a discharge tube 305 which forms a microwave plasma through a gas supplied from 304 and emits the formed plasma to be irradiated to the panel on which the structure forming material layer is formed.

That is, taking a PDP as a representative example of the FPD, for example, as shown in Fig. 1 to 2, according to the present invention, the panel in which the PDP manufacturing paste is formed structure enters the panel in the kiln through the drying process in the drying furnace. In this case, the firing furnace is not firing by a general heating device, but firing the dried paste pattern through irradiation of a discharge tube in which the microwaves are transmitted through the waveguide.

That is, the present invention forms a structure forming material layer on the substrate, and after drying the organic material removal and preheating the substrate, when firing the material layer, the microwave plasma is irradiated to the substrate to instantaneously heat the material layer It is characterized by having a heat treatment time shorter than the existing process.

 Microwave plasmas are classified as cold plasmas. In the plasma state, the temperature range refers to the energy of heavy particles, not electrons. Plasma is composed of neutral particles and charged particles. That is, depending on the temperature of the heavy particles are divided into low temperature or high temperature plasma.

 The electrons are much lighter than the heavier particles, so the temperature of the electrons does not affect the temperature of the plasma as a whole. Thus, microwave plasma, which is a low-temperature plasma, has only a room temperature of neutral particles or ions even if its temperature is tens of thousands at the energy level of electrons.

When the plasma comes into contact with the surface of the solid, its energy is absorbed and converted into heat for the most part. The energy of the neutral particles in the plasma has kinetic energy and vibration energy, and the consumption of these energies heats the substrate. Even among the neutral particles, the excited particles release energy only through collisions, and the released energy heats the metal surface. In addition, ion particles with high energy impinge on the surface of the solid when the energy is transferred to the lattice atoms, causing chain collisions in the lattice for a very short time. Will be heated. The ions impinging on the solid lose energy and eventually become neutral particles.

 As shown in FIG. 1, the microwave plasma generator includes a magnetron 301 for generating microwaves, a waveguide 302 and a discharge tube 305 for transmitting microwaves, and a gas supply device. Supplying gas through 304 generates microwave plasma 306. This is a representative microwave plasma system, also called a microwave plasma torch. The present invention proceeds the heat treatment of the panel for FPD using this to emit the plasma so that the formed plasma is irradiated to the panel on which the structure forming material layer for FDP manufacturing.

The flat panel display device may include a PDP, an LCD, an ELD, and the like. Preferably, the flat panel display device is a plasma display panel (PDP), and the structure forming material layer may be applied to various known FDPs. A variety of known material layers correspond to this, and are preferably an electrode forming paste of the PDP panel or a sputtered metal thin film of a liquid crystal display device, and thus the structure is an electrode of the PDP panel or an electrode of a liquid crystal display device. The heat treatment corresponds to a heat treatment of various process steps used for manufacturing the FDP, and preferably, the firing of the electrode forming paste or the uniformity of the metal thin film is maximized according to the application of the present invention. That is, the flat panel display element is a plasma display panel, the structure forming material layer is an electrode forming paste of the panel, the structure is an electrode of the panel, and the heat treatment is firing of the electrode forming paste or the flat plate. The display element is a liquid crystal display element, the structure forming material layer is a sputtered metal thin film of the panel, the structure is an electrode of the panel, and the heat treatment is to homogenize the metal thin film for electrode formation.

Also preferably, the microwave plasma may be operated at atmospheric pressure. Therefore, the microwave plasma may be operated at atmospheric pressure. For this purpose, the atmospheric plasma does not require a separate vacuum chamber. As shown, the heat treatment process may be a continuous process, and heat treatment may be performed on a part of the panel. For this purpose, the heat treatment furnace may be formed as a chamber in which the inlet and the outlet are open to the outside. It can also be formed.

In addition, the discharge tube for irradiating the microwave plasma is fixed and the panel is transported, or conversely, the panel is fixed and can be formed as a chamber in which the discharge tube for irradiating the microwave plasma moves. Of course, this may be combined with a known technique such as an exhaust pipe for the discharge of the exhaust gas according to the firing.

The magnetron also preferably generates microwaves in the 2.45 GHz band and the output is regulated by the power supply. In other words, the magnetron in the 2.45GHz band is already widely used, and it is recommended to use the band because it is inexpensive and easily obtained.

In addition to this, the heat treatment furnace may further include a triple bar tuner. This allows the microwave to be matched so that the maximum microwave output is concentrated in the plasma generator. That is, by controlling the wavelengths of the microwaves generated by the magnetron and diffusely reflected through the waveguide, the wavelength is controlled so that the wavelength of the microwave is λ / 4 in the plasma generator.

In addition, the discharge tube mainly uses a quartz tube having excellent properties even at high temperature as a region where plasma is generated. The gas to be supplied may be air, N ₂ , O ₂ , Ar, He and an inert gas. The microwave plasma generated at this time can be heated to a temperature up to 5000 ℃.

3A-3B show the temperature gradient when heating the substrate and material layer with microwave plasma. The farther vertical and horizontal away from the discharge tube, the instantaneous heating temperature drops. Therefore, in order to heat-treat the material layer with microwave plasma, the distance between the discharge tube and the substrate must be maintained at a constant distance.

4 is a view showing a relationship with the temperature according to the flow rate of the gas flowing into the discharge tube. The faster the gas flow rate, the lower the temperature in the center of the discharge tube is, and the farther away from the discharge tube in the horizontal direction, the larger the width of the temperature drop. On the contrary, when the gas flow rate is slow, the temperature of the center of the discharge tube rises and the temperature decrease occurs relatively far away from the discharge tube in the horizontal direction.

This is presumably because the plasma tends to concentrate at higher current densities as the pressure increases. The increase in gas flow rate has the same effect as the pressure increase in the discharge tube, and it is presumed that the neutral particles and charged particles in the plasma are more accelerated to accelerate the line speed, thereby reducing the phenomenon of particles spreading around. It also has some differences depending on the type of gas.

In the case of heat treatment on a large area substrate, the heat treatment furnace may include a plurality of heat discharge furnaces such that a plurality of the discharge tubes are arranged side by side in a direction perpendicular to the conveying direction of the panel in the heat treatment furnace. That is, FIG. 5 is a diagram in which the microwave plasma torch 405 is arranged in parallel to be applied to the large-area substrate 404. Due to the characteristics of plasma, it is very difficult to obtain a stable discharge of a large area at normal pressure. Lowering the frequency band of the magnetron and increasing the diameter of the waveguide can sufficiently increase the area of the plasma. However, magnetrons in the 2.45 GHz band are already widely used and are inexpensive and easy to obtain. Therefore, rather than adjusting the frequency band to control additional costs, it is more effective and simple to treat large areas by arranging the microwave plasma torch in parallel as shown. The spacing of the microwave plasma torch 405 is arranged so that the regions of the substrate 404 heated by the plasma 306 overlap as shown in FIG. 5.

FIG. 6 is a diagram showing the temperature that is received, that is, the temperature of the substrate of FIG. 5. At the center of the plasma torch the highest temperature and the lowest temperature are shown in the overlap. In order to heat the substrate uniformly, the width of the maximum and minimum temperatures should be as small as possible around the proper temperature. For this purpose, a uniform temperature can be obtained by appropriately adjusting the distance between the discharge tube of the plasma torch and the substrate, the distance between the plasma torch and the plasma torch, and the reaction gas inflow rate.

In addition, the present invention provides a flat panel display device (FDP) manufacturing apparatus comprising the heat treatment furnace for manufacturing an FDP of the present invention described above. Specific examples thereof are as shown in FIG. 2. That is, the FDP manufacturing apparatus is continuously connected to the front end of the heat treatment furnace, the drying furnace for drying and supplying the panel for fabricating the flat panel display element to the heat treatment furnace, and continuously connected to the rear end of the heat treatment furnace, The apparatus may further include a cooling unit cooling the panel for manufacturing the heat-treated flat panel display device, and FIG. 2 is a view illustrating an embodiment of a flat panel display device manufacturing apparatus of the present invention for manufacturing the panel for manufacturing the flat panel display device. to be. After the structure forming material layer is formed on the flat panel display device (FDP), which is a substrate for FPD, the drying furnace 401, the heat treatment furnace 402, and the cooling unit 403 are subjected to various methods.

In the drying furnace 401, drying is preferably performed at a temperature of 100 to 200 ° C., thereby removing the organic material in the paste pattern or a solution by a developing process, and then removing the substrate 404 before firing with a microwave plasma. It also has a preheating effect. Since the microwave plasma torch 405 is instantaneous high temperature heating, the thermal damage of the substrate may be minimized by preventing rapid thermal expansion of the substrate through preheating of the substrate.

In the heat treatment furnace 402, the substrate 404 and the structure forming material layer formed on the substrate are heated by the atmospheric microwave plasma 306. The state of the plasma is low temperature, but once the plasma 306 reaches the substrate 404, it heats up the substrate instantaneously. The heating takes place within 1 minute and the heat treatment proceeds as much as 10 ~ 20 times faster than the existing IR heat treatment method. The short time heating shortens the processing time and enables continuous processing, and prevents the substrate from being damaged by thermal expansion of the substrate due to the instantaneous high temperature heating of the plasma. The substrate subjected to the heat treatment in the heat treatment furnace is cooled in the cooling unit 403.

Finally, the present invention after the drying process (for example, pre-heating process) for removing organic matter in the panel having a structure forming material layer for manufacturing a flat panel display device on the substrate of the flat panel display device, to form a structural room A flat panel display device manufacturing method of heat-treating a structure forming material layer to heat a layer, wherein the heat treatment is performed by irradiating a microwave plasma to a substrate and heating the material layer. This is the same as described above, and the heat treatment furnace and the flat panel display device manufacturing apparatus described above may be utilized in the heat treatment process. That is, the heat treatment forms an atmospheric microwave plasma through a magnetron for generating microwaves, a waveguide for delivering microwaves generated from the magnetron, and a gas delivered from the microwave and gas supply device delivered through the waveguide. It may be made of a heat treatment furnace including a discharge tube for emitting the plasma formed so as to irradiate the panel formed with the material layer for producing the FDP.

The microwave plasma is preferably using an atmospheric microwave plasma, and in the case of the heat treatment using the atmospheric pressure microwave plasma, dielectric heating using the microwave, and heat treatment of the paste by conventional infrared heat treatment method to form the electrode After the measurement of the resistance value of the electrode is shown in Table 1 below.

Heating method Conventional IR Method Genetic heating Microwave plasma Specific resistance One 0.954 0.913

As a result, as shown in Table 1, the dielectric heating method shows a decrease in the resistance of the electrode by about 4-5% compared to the conventional IR method. This is because the dielectric heating method is heated from the inside, unlike the conventional IR method, and the electrode density is increased. In addition, the microwave plasma of the present invention is not heated from the inside like dielectric heating, but because of the instantaneous heating at a high temperature, the inner and outer surfaces are almost simultaneously heated, and thus the densities of the electrodes are more increased than the dielectric heating. This can be expected to improve the performance of the electrode by reducing the resistance of the electrode about 8 ~ 9% compared to the conventional IR firing process.

Table 2 relates to the sheet resistance of the substrate and the uniformity of the thin film after heat-treating the substrate on which the metal layer is formed by sputtering with atmospheric pressure microwave plasma.

Heating method Before heat treatment After heat treatment Specific resistance One 0.823 Thin film uniformity 92.2% 95.5%

When the heat treatment is performed, the resistance of the thin film is reduced to nearly 20%. Oxygen adsorbed to the grain boundary due to the heat treatment of the metal layer is desorbed, the grain growth due to the active motility of the particles is believed to decrease the number of interfaces through which the current must pass through, thereby reducing the resistance.

The uniformity of the thin film is also effective to improve 2-3%. When the metal thin film is heat-treated, it appears that the uniformity of the entire thin film is improved as the crystal of the thin film is grown.

Finally, the present invention provides a flat panel display device for use in a flat panel display device, which is manufactured by the method for manufacturing the flat panel display device as described above. A flat panel display device having excellent characteristics can be provided.

According to the heat treatment for manufacturing a flat panel display device of the present invention, a flat panel display device manufacturing apparatus and a flat panel display device manufacturing method, and the flat panel display device manufactured by the same, the time required for heat treatment when the heat treatment process using the microwave plasma It can significantly reduce the pressure, and can work in the closed chamber as well as the open chamber at normal pressure, thereby achieving continuity and yield improvement of the production process, and minimizing damage due to thermal expansion and thermal contraction of the substrate by shortening the high temperature processing time of the substrate. This can reduce the defective rate. In addition, the density of the material layer is increased, thereby lowering the resistance of the material layer, thereby improving the performance of the material layer and improving the uniformity of the formed film.

In addition, the microwave plasma generating device of the present invention can be applied immediately by replacing only a heat source in an existing facility, and can easily cope with a large-area substrate by installing the device in parallel. In addition, the magnetron, a key component used in plasma generators, has the advantage of being easily available on the market and inexpensive. In addition, since the plasma is generated at atmospheric pressure as described above, no separate vacuum equipment is required, and the gas used in the plasma can be selected according to various purposes. In addition, there is no need to keep the temperature in the furnace at a high temperature for heat treatment like the conventional IR firing furnace, thereby reducing costs.

The present invention described above is not limited to the above-described embodiment and the accompanying drawings, and various modifications and changes made by those skilled in the art without departing from the spirit and scope of the present invention described in the claims below. Changes are also included within the scope of the invention.

Claims (15)

In the heat treatment furnace for manufacturing a flat panel display element which forms a required structure by heat-treating the structure forming material layer formed in the panel for flat panel display element manufacture, The heat treatment furnace Magnetrons that generate microwaves; A waveguide for transmitting microwaves generated by the magnetron; And, A discharge tube for forming a microwave plasma through a microwave delivered through the waveguide and a gas supplied from a gas supply device, and emitting the plasma to be irradiated onto a panel on which a structure forming material layer for manufacturing the flat panel display device is formed; Heat treatment furnace for manufacturing a flat panel display element comprising a. The method of claim 1, The flat panel display element is a plasma display panel, the structure forming material layer is an electrode forming paste of the panel, the structure is an electrode of the panel, and the heat treatment is a firing of the electrode forming paste. Heat treatment furnace for manufacturing display elements. The method of claim 1, The flat panel display device is a liquid crystal display device, the structure forming material layer is a sputtered metal thin film of the panel, the structure is an electrode of the panel, the heat treatment is characterized in that the uniformity of the metal thin film for electrode formation. Heat treatment furnace for manufacturing flat panel display elements. The method according to any one of claims 1 to 3, The microwave plasma is an atmospheric pressure microwave plasma, the heat treatment furnace is a heat treatment furnace for producing a flat panel display device, characterized in that formed in the inlet and the outlet is a chamber opened to the outside. The method according to any one of claims 1 to 3, The microwave plasma is an atmospheric pressure microwave plasma, the heat treatment furnace is a heat treatment furnace for manufacturing a flat panel display element, characterized in that the inlet and outlet is formed as a chamber sealed from the outside. The method according to any one of claims 1 to 3, The heat treatment furnace is a heat treatment furnace for manufacturing a flat panel display element, characterized in that the discharge tube is fixed and the panel is transported. The method according to any one of claims 1 to 3, The heat treatment furnace is a heat treatment furnace for manufacturing a flat panel display device, characterized in that the panel is fixed and the discharge tube is moved. The method according to any one of claims 1 to 3, The magnetron is a heat treatment furnace for manufacturing a flat panel display device, characterized in that 2.45 GHz band. The method according to any one of claims 1 to 3, And a triple bar tuner for matching the microwaves to increase output. The method according to any one of claims 1 to 3, And a plurality of discharge tubes are arranged side by side in a direction perpendicular to the conveying direction of the panel in the heat treatment furnace. In the flat panel display device manufacturing apparatus, The flat panel display element manufacturing apparatus containing the heat processing furnace for manufacturing the flat panel display element of any one of Claims 1-3. The method of claim 11, A drying furnace continuously connected to the front end of the heat treatment furnace and drying the panel for manufacturing a flat panel display device to supply the heat treatment furnace; And, And a cooling unit continuously connected to the rear end of the heat treatment furnace to cool the heat-treated panel for manufacturing a flat panel display device. In the method for manufacturing a flat panel display device, after the drying process for removing organic matters on the panel on which the structure-forming material layer for forming a flat panel display device is formed, the material layer is heat-treated to form a structure. The heat treatment is a method of manufacturing a flat panel display device, characterized in that the microwave plasma is irradiated to the substrate to heat the structure forming material layer. The method of claim 13, The heat treatment is formed by forming an atmospheric microwave plasma through a magnetron for generating a microwave, a waveguide for delivering a microwave generated from the magnetron, and a gas supplied from the microwave and the gas supply device delivered through the waveguide And a heat treatment furnace including a discharge tube for emitting plasma to irradiate the panel on which the structure forming material layer for forming the flat panel display device is formed. In the flat panel display element used for the flat panel display device, The flat panel display element manufactured by the manufacturing method of the flat panel display element of Claim 13 or 14.

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