KR20070069907A - Wafer apparatus with semiconductor element manufacture diffusion - Google Patents

Wafer apparatus with semiconductor element manufacture diffusion Download PDF

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KR20070069907A
KR20070069907A KR1020050132560A KR20050132560A KR20070069907A KR 20070069907 A KR20070069907 A KR 20070069907A KR 1020050132560 A KR1020050132560 A KR 1020050132560A KR 20050132560 A KR20050132560 A KR 20050132560A KR 20070069907 A KR20070069907 A KR 20070069907A
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wafer
vertical rod
temperature
inner tube
diffusion
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KR1020050132560A
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Korean (ko)
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장문수
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동부일렉트로닉스 주식회사
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Priority to KR1020050132560A priority Critical patent/KR20070069907A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

A wafer apparatus of a diffusion furnace for of semiconductor device fabrication is provided to enhance a yield thereof by constantly maintaining a thickness of a wafer to be processed in the furnace. A diffusion furnace includes a cylindrical inner tube(2) with opened upper and lower portions, an outer tube receiving the inner tube and adapted to shield inflow of external air, and a heater chamber(6) installed around the outer tube for heating the outer tube. A vertical rod(10) is positioned in the inner tube, and is installed on a boat in a state in which the vertical rod is in closely contact with an outer periphery of a wafer(1). A temperature detecting unit(20) is installed in the vertical rod, and a controller(30) receives a temperature of the wafer detected by the temperature detecting unit.

Description

반도체 소자 제조용 확산로의 웨이퍼 장치{Wafer Apparatus With Semiconductor Element Manufacture Diffusion}Wafer Apparatus With Semiconductor Element Manufacture Diffusion

도 1은 본 발명에 의한 반도체 소자 제조용 확산로의 웨이퍼 장치를 도시한 도면.BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows a wafer device of a diffusion path for manufacturing a semiconductor device according to the present invention.

도 2는 본 발명에 의한 반도체 소자 제조용 확산로의 웨이퍼 장치의 작동상태도.2 is an operational state diagram of a wafer apparatus in a diffusion path for manufacturing a semiconductor device according to the present invention.

*도면의 주요 부분에 대한 부호의 설명** Description of the symbols for the main parts of the drawings *

1 : 웨이퍼 10 : 수직로드1: wafer 10: vertical load

11 : 관통공 20 : 온도감지부11: through hole 20: temperature sensing unit

22 : 가이드튜브 24 : 온도감지센서22: guide tube 24: temperature sensor

본 발명은 확산로의 히터챔버에서 가해지는 열에 의해 보트부에 적재된 다수의 웨이퍼상에 어느 정도의 열이 가해지는지에 대해 정확히 판단 가능하도록 하여 상기 웨이퍼의 에지(Edge) 부분의 두께가 다른 부분에 비해서 두꺼워지는 현상을 방지하여 웨이퍼의 수율을 향상시키기 위한 반도체 소자 제조용 확산로의 웨이퍼 장치에 관한 것이다.According to the present invention, it is possible to accurately determine how much heat is applied to a plurality of wafers loaded on the boat part by the heat applied from the heater chamber of the diffusion path, so that the thickness of the edge portion of the wafer is different. The present invention relates to a wafer apparatus for a diffusion path for manufacturing a semiconductor device for preventing a thickening phenomenon and improving a yield of a wafer.

일반적으로, 반도체 소자의 제조 공정 중에서 공급 가스의 화학적 반응을 이용하여 웨이퍼의 표면에 박막을 형성시키는 방법으로, 저압 화학 기상 침적(LPCVD) 방법을 이용한 확산로를 많이 사용하고 있다.In general, as a method of forming a thin film on the surface of a wafer using a chemical reaction of a supply gas in the manufacturing process of a semiconductor device, many diffusion furnaces using a low pressure chemical vapor deposition (LPCVD) method are used.

상기한 확산로는 상하가 관통된 원통형태의 인너튜브와, 상기 인너튜브를 내부에 수용한 상태로 형성되며 외부 공기의 유입을 차단 가능하도록 구비된 아웃터 튜브와, 상기 아웃터 튜브의 둘레에 설치되어 내부를 가열할 수 있도록 히터챔버를 포함하여 구성되며, 상기 인너튜브 내부에 다수개의 웨이퍼가 적재된 보트가 위치한다.The diffusion path is formed in a cylindrical inner tube through which the upper and lower penetrates, an outer tube formed to receive the inner tube therein, and provided to block inflow of external air, and installed around the outer tube. It is configured to include a heater chamber to heat the inside, there is a boat in which a plurality of wafers are placed in the inner tube.

상기한 보트에 적재된 웨이퍼는 확산로 내부로 유입되는 가스에 의해 침적이 실시되는데, 상기 웨이퍼의 외측단부(Edge)로 갈수록 두께가 높아지는 현상이 발생되었다.The wafer loaded on the boat is deposited by the gas flowing into the diffusion path, and the thickness increases toward the outer edge of the wafer.

이는 확산로 내부의 온도를 유지하는 히터챔버와 가까운 곳에 웨이퍼의 단부가 위치하게되어 히터챔버의 가열에 의한 급격한 열변화를 많이 받기 때문이다.This is because the end of the wafer is located close to the heater chamber that maintains the temperature inside the diffusion path and receives a lot of sudden thermal changes due to the heating of the heater chamber.

종래에는 상기한 웨이퍼 단부의 불균일한 두께의 형성을 방지하기 위해서 상기 아웃터튜브의 외측에 급접해서 상기 인너튜브 내부의 보트상에 적재된 웨이퍼의 온도를 감지하고자 온도소자가 설치된 감지봉을 상기 아웃터튜브의 길이 방향상에 설치하여 사용해 왔다.Conventionally, in order to prevent the formation of the non-uniform thickness of the wafer end, a sensing rod provided with a temperature element is installed in order to sense the temperature of the wafer loaded on the boat inside the inner tube by contacting the outside of the outer tube. It has been used in the longitudinal direction of.

그러나, 상기와 같이 온도소자가 내장된 감지봉이 아웃터튜브의 외측에 설치하게되어 보트에 다수개가 적재된 웨이퍼의 온도를 정확하게 감지하지 못함으로써 정밀도가 저하되며, 이로인해 상기 웨이퍼의 외측단부(Edge) 부분의 두께가 두꺼워지는 현상이 발생되어 제품 품질의 저하를 유발 하였다. However, as described above, the sensing rod having the temperature element is installed on the outer side of the outer tube, so that the precision of the wafer loaded on the boat cannot be accurately sensed, thereby degrading the precision. The thickening of the part occurred, causing a decrease in product quality.

본 발명은 상기한 문제점을 해결하기 위하여 안출된 것으로서, 확산로 내부에서 침적되는 웨이퍼의 위치에 상관없이 균일한 두께로 제조 가능한 반도체 소자 제조용 확산로의 웨이퍼 장치를 제공하는데 그 목적이 있다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and an object thereof is to provide a wafer device for a diffusion path for manufacturing a semiconductor device, which can be manufactured to a uniform thickness irrespective of the position of the wafer deposited inside the diffusion path.

상기한 목적을 달성하기 위한 본 발명은, 인너튜브 내부에 위치하며, 웨이퍼의 외측에 밀착된 상태로 보트상에 설치되는 수직로드; 상기 수직로드의 내부에 구비되며 상기 웨이퍼의 온도를 감지하는 온도감지부; 및 상기 온도감지부에서 감지된 온도 정보를 수신하여 해당 명령을 수행하는 제어부를 포함하여 구성되는 반도체 소자 제조용 확산로의 웨이퍼 장치를 제공하는 것을 특징으로 한다.The present invention for achieving the above object is a vertical rod which is located inside the inner tube, is installed on the boat in close contact with the outside of the wafer; A temperature sensing unit provided inside the vertical rod and sensing a temperature of the wafer; And a controller configured to receive the temperature information sensed by the temperature sensing unit and perform a corresponding command.

상기 수직로드에는 길이 방향을 따라 웨이퍼를 향해 관통 형성된 관통공이 구비된다.The vertical rod is provided with a through hole formed through the longitudinal direction toward the wafer.

상기 관통공은 상기 수직로드를 따라 적어도 3개 이상 구비된다.At least three through holes are provided along the vertical rod.

상기 관통공은 균일 간격으로 수직로드상에 형성된다.The through holes are formed on the vertical rods at uniform intervals.

상기 온도감지부는 수직로드 내부의 길이 방향을 따라 삽입 설치되는 가이드튜브, 상기 가이드 튜브상에 구비되는 온도감지센서를 포함하여 구성된다.The temperature sensing unit includes a guide tube inserted and installed along the longitudinal direction inside the vertical rod, and a temperature sensor provided on the guide tube.

상기 가이드튜브는 수직로드상에 용접되어 설치된다.The guide tube is welded and installed on a vertical rod.

이하, 본 발명의 바람직한 실시예를 첨부된 도면을 참조하여 설명하기로 한 다.Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

도 1은 본 발명에 의한 반도체 소자 제조용 확산로의 웨이퍼 장치를 도시한 도면이다.BRIEF DESCRIPTION OF THE DRAWINGS It is a figure which shows the wafer apparatus of the diffusion path for manufacturing semiconductor elements by this invention.

인너튜브(2) 내부에 위치하며, 웨이퍼(1)의 외측에 밀착된 상태로 수직로드(10)가 보트(8)에 구비된다. 상기 수직로드(10)의 내부에 구비되며 상기 웨이퍼(1)의 온도를 감지하는 온도감지부(20); 및 상기 온도감지부(20)에서 감지된 온도 정보를 수신하여 해당 명령을 수행하는 제어부(30)를 포함하여 구성된다.Located in the inner tube 2, the vertical rod 10 is provided in the boat 8 in close contact with the outside of the wafer (1). A temperature sensing unit 20 provided inside the vertical rod 10 and sensing a temperature of the wafer 1; And a controller 30 that receives the temperature information detected by the temperature sensing unit 20 and performs a corresponding command.

상기 수직로드(10)에는 길이 방향을 따라 웨이퍼(1)를 향해 관통 형성된 관통공(11)이 구비되며, 상기 관통공(11)은 상기 수직로드(10)를 따라 적어도 3개 이상 형성된다. 상기 관통공(11)은 수직로드(10)를 따라 5개 까지 설치 가능하다.The vertical rod 10 has a through hole 11 formed through the longitudinal direction toward the wafer 1, and at least three through holes 11 are formed along the vertical rod 10. The through holes 11 may be installed up to five along the vertical rod 10.

상기 관통공(11)은 균일 간격으로 수직로드(10)상에 형성된다. 왜냐하면, 상기 웨이퍼(1)에 가해지는 열을 온도감지부(20)가 정확하게 감지하기 위해서이다.The through holes 11 are formed on the vertical rod 10 at uniform intervals. This is because the temperature sensing unit 20 accurately detects the heat applied to the wafer 1.

상기 온도감지부(20)는 수직로드(10) 내부의 길이 방향을 따라 삽입 설치되는 가이드튜브(22)와, 상기 가이드튜브(22)상에 구비되는 온도감지센서(24)를 포함하여 구성된다.The temperature sensing unit 20 includes a guide tube 22 inserted and installed along the longitudinal direction of the vertical rod 10, and a temperature sensor 24 provided on the guide tube 22. .

상기 가이드튜브(22)는 수직로드(10)상에 용접되어 설치된다.The guide tube 22 is installed by welding on the vertical rod (10).

상기와 같이 구성되는 본 발명에 의한 반도체 소자 제조용 확산로의 웨이퍼 장치의 작동 상태를 도면을 참조하여 설명한다.The operating state of the wafer apparatus of the diffusion path for manufacturing a semiconductor element according to the present invention configured as described above will be described with reference to the drawings.

첨부된 도 2를 참조하면, 저압 화학 기상 침적(LPCVD) 방법을 이용한 확산로 내부의 온도 조절은 별도로 구비되는 온도콘트롤러(미도시)에 의해 히터챔버(6)에 가해지는 전류를 조절하여 행해지며, 보트(8)상에 다수 적재된 웨이퍼(1)를 침적 시키기 위해서 상기 확산로 내부로 반응가스가 유입된다.Referring to FIG. 2, the temperature control in the diffusion furnace using the low pressure chemical vapor deposition (LPCVD) method is performed by controlling the current applied to the heater chamber 6 by a temperature controller (not shown) provided separately. In order to deposit a plurality of wafers 1 loaded on the boat 8, a reaction gas is introduced into the diffusion path.

상기 반응가스는 보트(8)의 하측에서 상측으로 유입되며, 이와 동시에 히터챔버(6)에 의해 확산로 내부가 가열되기 시작한다.The reaction gas flows from the lower side of the boat 8 to the upper side, and at the same time, the inside of the diffusion path begins to be heated by the heater chamber 6.

상기 보트(8)상에 설치된 수직로드(10)의 내측에 구비된 온도감지센서(24)는 상기 웨이퍼(1)와 최근접의 위치에서 상기 히터챔버(6)에서 발생된 히터열에 의해 웨이퍼(1)에 가해지는 온도 상태를 감지한다.The temperature sensor 24 provided on the inside of the vertical rod 10 installed on the boat 8 is connected to the wafer by the heater heat generated in the heater chamber 6 at a position closest to the wafer 1. Detect the temperature condition applied to 1).

상기 온도감지센서(24)는 가이드튜브(22)상에 설치되며, 상기 가이드 튜브(22)는 수직로드(10)상에 용접 설치된다.The temperature sensor 24 is installed on the guide tube 22, the guide tube 22 is welded on the vertical rod (10).

상기 온도감지센서(24)는 수직로드(10)의 길이 방향을 따라 최소 3개에서 5개까지 설치 가능하며, 수직로드(10)를 따라 균일 간격으로 설치된 관통공(11)을 통해 보트(8)에 적재된 웨이퍼(1)의 설치 위치에 따른 에지(Edge) 부근의 온도가 제어부(30)로 전달된다.The temperature sensor 24 may be installed at least three to five along the longitudinal direction of the vertical rod 10, the boat (8) through the through-holes 11 are installed at uniform intervals along the vertical rod (10) The temperature near the edge (Edge) according to the installation position of the wafer 1 loaded on the) is transmitted to the controller 30.

제어부(30)로 전달된 온도신호는 수직로드(10)의 각 위치별로 감지된 온도감지센서(24) 신호가 입력되어 연산되며, 웨이퍼(1)에 가해지는 온도가 별도로 구비된 표시부에 의해 표시된다. 작업자는 이를 육안으로 확인한후에 상기 웨이퍼(1)의 침적이 안정적으로 이루어지도록 히터챔버(6)의 온도를 조절한다.The temperature signal transmitted to the controller 30 is calculated by inputting the temperature sensor 24 signal detected at each position of the vertical rod 10, and is displayed by a display unit having a temperature applied to the wafer 1 separately. do. After the operator visually confirms this, the operator adjusts the temperature of the heater chamber 6 so as to stably deposit the wafer 1.

이로인해 상기 웨이퍼(1)의 침적이 위치에 상관없이 일정한 두께를 갖도록 형성된다.As a result, the deposition of the wafer 1 is formed to have a constant thickness regardless of the position.

한편, 본 발명은 발명의 요지를 벗어남이 없이 당해 발명이 속하는 분야에서 통상의 지식을 가진 자라면 누구든지 다양한 변경 실시가 가능할 것이다. On the other hand, the present invention can be variously modified by those skilled in the art without departing from the gist of the invention.

이상에서 설명한 바와 같이, 본 발명에 따른 반도체 소자 제조용 확산로의 웨이퍼 장치는 확산로 내부에서 침적되는 웨이퍼의 두께가 일정하게 형성되어 수율이 향상되는 효과가 있다.As described above, the wafer device of the diffusion path for manufacturing a semiconductor device according to the present invention has the effect that the thickness of the wafer deposited inside the diffusion path is formed to be constant and the yield is improved.

Claims (6)

상하가 관통된 원통형태의 인너튜브, 상기 인너튜브를 내부에 수용한 상태로 형성되며 외부 공기의 유입을 차단 가능하도록 구비된 아웃터 튜브, 상기 아웃터 튜브의 둘레에 설치되어 내부를 가열할 수 있도록 구비된 히터챔버를 포함하는 확산로에 있어서,An inner tube having a cylindrical shape penetrated up and down, an inner tube formed inside the inner tube, and provided to block the inflow of external air, and installed around the outer tube to heat the inside. In the diffusion furnace comprising a heated heater chamber, 상기 인너튜브 내부에 위치하며, 웨이퍼(1)의 외측에 밀착된 상태로 보트상에 설치되는 수직로드(10);A vertical rod (10) positioned inside the inner tube and installed on the boat in close contact with the outside of the wafer (1); 상기 수직로드(10)의 내부에 구비되며 상기 웨이퍼(1)의 온도를 감지하는 온도감지부(20); 및A temperature sensing unit 20 provided inside the vertical rod 10 and sensing a temperature of the wafer 1; And 상기 온도감지부(20)에서 감지된 온도 정보를 수신하여 해당 명령을 수행하는 제어부(30)를 포함하여 구성되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.And a control unit (30) for receiving the temperature information detected by the temperature sensing unit (20) and executing a corresponding command. 제 1항에 있어서,The method of claim 1, 상기 수직로드(10)에는 길이 방향을 따라 웨이퍼(1)를 향해 관통 형성된 관통공(11)이 구비되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.The vertical rod (10) is a wafer device of the diffusion path for manufacturing a semiconductor device, characterized in that the through hole (11) formed through the longitudinal direction toward the wafer (1). 제 2항에 있어서,The method of claim 2, 상기 관통공(11)은 상기 수직로드(10)를 따라 적어도 3개 이상 구비되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.At least three through holes (11) are provided along the vertical rod (10). 제 3항에 있어서,The method of claim 3, wherein 상기 관통공(11)은 균일 간격으로 수직로드(10)상에 형성되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.The through hole (11) is a wafer device of the diffusion path for manufacturing a semiconductor device, characterized in that formed on the vertical rod (10) at uniform intervals. 제 1항에 있어서,The method of claim 1, 상기 온도감지부(20)는 수직로드(10) 내부의 길이 방향을 따라 삽입 설치되는 가이드튜브(22), 상기 가이드튜브(22)상에 구비되는 온도감지센서(24)를 포함하여 구성되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.The temperature sensing unit 20 is configured to include a guide tube 22 inserted into the longitudinal direction of the vertical rod 10, the temperature sensor 24 provided on the guide tube 22 Wafer apparatus of the diffusion furnace for semiconductor element manufacture characterized by the above-mentioned. 제 5항에 있어서,The method of claim 5, 상기 가이드튜브(22)는 수직로드(10)상에 용접되어 설치되는 것을 특징으로 하는 반도체 소자 제조용 확산로의 웨이퍼 장치.The guide tube (22) is a wafer device of a diffusion path for manufacturing a semiconductor device, characterized in that is installed on the vertical rod 10 is welded.
KR1020050132560A 2005-12-28 2005-12-28 Wafer apparatus with semiconductor element manufacture diffusion KR20070069907A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560681A (en) * 2010-12-16 2012-07-11 中芯国际集成电路制造(北京)有限公司 Temperature measuring device and diffusion furnace
KR20230142228A (en) 2022-04-01 2023-10-11 우성이엔디주식회사 Transfer module for easy removal of adhering powder

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102560681A (en) * 2010-12-16 2012-07-11 中芯国际集成电路制造(北京)有限公司 Temperature measuring device and diffusion furnace
CN102560681B (en) * 2010-12-16 2016-05-25 中芯国际集成电路制造(北京)有限公司 Temperature measuring equipment and diffusion furnace
KR20230142228A (en) 2022-04-01 2023-10-11 우성이엔디주식회사 Transfer module for easy removal of adhering powder

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