KR20070043456A - Lift pin in electro static chuk of semiconductor production device - Google Patents

Lift pin in electro static chuk of semiconductor production device Download PDF

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Publication number
KR20070043456A
KR20070043456A KR1020050099752A KR20050099752A KR20070043456A KR 20070043456 A KR20070043456 A KR 20070043456A KR 1020050099752 A KR1020050099752 A KR 1020050099752A KR 20050099752 A KR20050099752 A KR 20050099752A KR 20070043456 A KR20070043456 A KR 20070043456A
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South Korea
Prior art keywords
wafer
lift pin
electrostatic chuck
lift
lowered
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KR1020050099752A
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Korean (ko)
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김진욱
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삼성전자주식회사
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Priority to KR1020050099752A priority Critical patent/KR20070043456A/en
Publication of KR20070043456A publication Critical patent/KR20070043456A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

본 발명은 반도체 제조 장비용 정전척의 리프트 핀에 관한 것이다. 본 발명은 정전척 하부에 설치된 리프트후프에 의해 승하강되어 웨이퍼를 승하강시키는 리프트핀에 있어서, 상기 리프트핀은, RF 고주파를 인가하여 웨이퍼가 휘더라도 상기 웨이퍼와 상기 정전척 간에 아킹이 발생하지 않을 정도의 길이로 형성되는 것을 특징으로 하는 반도체 제조 장비용 정전척의 리프트 핀을 제공한다. 본 발명의 반도체 제조 장비용 정전척의 리프트 핀에 의하면, 웨이퍼를 지지하는 리프트 핀의 길이를 길게 하여 리프트 핀이 하강한 상태에서도 정전척의 표면에서 웨이퍼가 충분히 이격되어 있어 RF 인가로 웨이퍼가 휘게되더라도 아킹이 발생하는 것을 방지할 수 있으므로 아킹 발생으로 인한 웨이퍼의 손상을 방지할 수 있다. The present invention relates to a lift pin of an electrostatic chuck for semiconductor manufacturing equipment. The present invention relates to a lift pin which is lifted and lowered by a lift hoop installed under the electrostatic chuck, wherein the lift pin does not generate arcing between the wafer and the electrostatic chuck even when the wafer is bent by applying RF high frequency. It provides a lift pin of the electrostatic chuck for semiconductor manufacturing equipment, characterized in that it is formed to a length that does not. According to the lift pin of the electrostatic chuck for semiconductor manufacturing equipment of the present invention, the length of the lift pin supporting the wafer is increased so that the wafer is sufficiently spaced from the surface of the electrostatic chuck even when the lift pin is lowered, so that the wafer is bent by RF application. This can be prevented from occurring, so that damage to the wafer due to arcing can be prevented.

정전척, 리프트 핀, 리프트 후프, 아킹 Electrostatic chuck, lift pin, lift hoop, arcing

Description

반도체 제조 장비용 정전척의 리프트 핀{LIFT PIN IN ELECTRO STATIC CHUK OF SEMICONDUCTOR PRODUCTION DEVICE}LIFT PIN IN ELECTRO STATIC CHUK OF SEMICONDUCTOR PRODUCTION DEVICE}

도 1은 종래의 리프트 핀이 구비된 반도체 제조 장비용 정전척의 단면도.1 is a cross-sectional view of an electrostatic chuck for a semiconductor manufacturing equipment equipped with a conventional lift pin.

도 2는 본 발명에 따른 리프트 핀이 상승된 상태를 나타낸 반도체 제조 장비용 정전척의 단면도.Figure 2 is a cross-sectional view of the electrostatic chuck for semiconductor manufacturing equipment showing the lift pin is raised state according to the present invention.

도 3은 본 발명에 따른 리프트 핀이 하강된 상태를 나타낸 반도체 제조 장비용 정전척의 단면도.Figure 3 is a cross-sectional view of the electrostatic chuck for semiconductor manufacturing equipment showing the lift pin lowered state according to the present invention.

<도면의 주요 부분에 대한 부호의 설명><Explanation of symbols for the main parts of the drawings>

20; 정전척 22; 웨이퍼20; Electrostatic chuck 22; wafer

24; 리프트 핀 26; 리프트 후프24; Lift pins 26; Lift hoop

28; 벨로우즈관28; Bellows tube

본 발명은 반도체 제조 장비용 정전척의 리프트 핀에 관한 것으로서, 더욱 상세하게는 웨이퍼와 정전척 간에 아킹이 발생하는 것을 방지할 수 있는 반도체 제조 장비용 정전척의 리프트 핀에 관한 것이다.The present invention relates to a lift pin of an electrostatic chuck for semiconductor manufacturing equipment, and more particularly, to a lift pin of an electrostatic chuck for semiconductor manufacturing equipment that can prevent arcing from occurring between a wafer and an electrostatic chuck.

최근, 반도체 장치의 제조 기술은 소비자의 다양한 욕구를 충족시키기 위해 집적도, 신뢰도, 응답속도 등을 향상시키는 방향으로 발전하고 있다. 일반적으로 반도체 장치는 웨이퍼 상에 소정의 막을 형성하고, 상기 막을 전기적 특성을 갖는 패턴으로 형성함으로써 제조된다.Recently, the manufacturing technology of semiconductor devices has been developed to improve the degree of integration, reliability, response speed, etc. in order to meet various needs of consumers. Generally, a semiconductor device is manufactured by forming a predetermined film on a wafer and forming the film in a pattern having electrical properties.

상기 패턴은 화학 기상 증착, 스퍼터링, 포토리소그래피, 식각, 이온주입, 화학적 기계적 연마(CMP) 등과 같은 단위공정들의 순차적 또는 반복적인 수행에 의해 형성된다. The pattern is formed by sequential or repeated performance of unit processes such as chemical vapor deposition, sputtering, photolithography, etching, ion implantation, chemical mechanical polishing (CMP), and the like.

상기와 같은 단위 공정들에서는 웨이퍼를 지지 및 고정시키는 척이 사용된다. 최근, 반도체 장치의 미세화 및 대용량화를 요구하는 반도체 기판 가공 기술에서는 매엽식 가공 공정 및 건식 가공 공정이 선호됨에 따라 웨이퍼를 고정하는 방법도 크게 변하고 있다. In such unit processes, chucks are used to support and fix the wafer. In recent years, in the semiconductor substrate processing technology requiring miniaturization and large capacity of the semiconductor device, the wafer-fixing process and the dry process are preferred, and thus, the method of fixing the wafer is also greatly changed.

즉, 종래의 경우 단순히 클램프 또는 진공을 이용하여 웨이퍼를 고정하는 정도였으나, 최근에는 정전기력을 이용하여 웨이퍼를 고정시킴과 동시에 웨이퍼의 온도를 일정하게 유지하기 위한 온도 조절 가스를 제공하는 정전척(electro static chuck ; ESC)이 주로 사용되고 있다. That is, in the conventional case, the wafer was simply fixed by using a clamp or a vacuum. However, in recent years, an electrostatic chuck which provides a temperature control gas for fixing a wafer using an electrostatic force and maintaining a constant temperature of the wafer is used. static chuck (ESC) is mainly used.

상기 정전척의 사용 범위는 화학 기상 증착, 식각, 스퍼터링, 이온 주입 공정 등과 같이 전반적인 웨이퍼 가공 공정으로 확대되고 있으며, 공정 챔버에는 공정이 진행될 웨이퍼가 놓여지는 정전척 및 정전척 상부에 놓여진 웨이퍼를 승,하강시키는 리프트장치가 구비되어 있다.The use range of the electrostatic chuck has been expanded to the overall wafer processing process such as chemical vapor deposition, etching, sputtering, ion implantation process, etc., and the process chamber wins the electrostatic chuck on which the wafer to be processed is placed and the wafer placed on top of the electrostatic chuck. A lift device for lowering is provided.

도 1을 참조하여 웨이퍼 리프트 장치가 구비된 정전척에 대하여 설명한다.An electrostatic chuck equipped with a wafer lift apparatus will be described with reference to FIG. 1.

도 1은 종래의 리프트 핀이 구비된 반도체 제조 장비용 정전척의 단면도이다.1 is a cross-sectional view of an electrostatic chuck for a semiconductor manufacturing equipment equipped with a conventional lift pin.

도 1에 도시된 바와 같이, 정전척(10)의 상부에는 웨이퍼(12)가 놓여지며, 상기 웨이퍼(12)는 리프트 핀(14)에 의해 지지된다.As shown in FIG. 1, a wafer 12 is placed on top of the electrostatic chuck 10, which is supported by a lift pin 14.

이러한 리프트 핀(14)은 웨이퍼(12)를 승하강시켜 웨이퍼(12)를 지지할 뿐만 아니라 웨이퍼(12)에 축전된 전하를 방전시키는 역할을 수행하는데, 이는 챔버 내에서 웨이퍼(12)를 가공할 때 정전척(10)으로 웨이퍼(12)를 밀착시키기 위하여 DC전압을 인가하여 웨이퍼(12)에 필요한 만큼의 전하를 충전하게 되므로 가공을 마친 후 웨이퍼(12)에 접속되어 충전된 전하를 방전시키게 된다.The lift pin 14 lifts and lowers the wafer 12 to support the wafer 12 as well as to discharge the electric charge stored in the wafer 12, which processes the wafer 12 in the chamber. In order to close the wafer 12 with the electrostatic chuck 10, a DC voltage is applied to charge the wafer 12 as much as necessary, so that the charged charge connected to the wafer 12 after discharge is discharged. Let's go.

리프트 핀(14)은 소정의 공정을 진행하기 위해 로봇 암이 카세트에서 이송하여 온 웨이퍼(12)를 안착시키기 위해 승강한 후 웨이퍼(12)가 리프트 핀(14) 상부에 놓여지면 다시 하강하여 소정의 공정이 진행된다.The lift pin 14 is raised and lowered to seat the wafer 12 transferred from the cassette by the robot arm to perform a predetermined process, and then lowered again when the wafer 12 is placed on the lift pin 14. The process goes on.

이러한 리프트 핀(14)은 리프트 후프(16)에 연장형성되어 있고, 리프트 후프(16)는 벨로우즈관(18)에 연동되어 있다. 따라서 벨로우즈관(18)의 승하강에 따라 리프트 핀(14)도 승하강하게 된다. The lift pin 14 extends to the lift hoop 16, and the lift hoop 16 is linked to the bellows pipe 18. Therefore, the lift pin 14 also moves up and down as the bellows pipe 18 moves up and down.

그러나, 종래의 리프트 핀의 길이는 웨이퍼가 안치되어 하강한 상태에서 정전척의 표면에서 웨이퍼가 약간 이격될 정도로 형성되어 있어, RF 고주파를 인가하여 웨이퍼가 휠 경우, 특히 웨이퍼가 완전히 평평하지 않은 않거나 열에 의해 웨이퍼의 휨이 심해질 경우 웨이퍼와 정전척 간에 아킹이 발생하여 웨이퍼가 손상되는 문제점이 발생한다.However, the length of the conventional lift pin is formed so that the wafer is slightly spaced apart from the surface of the electrostatic chuck in the state where the wafer is placed and lowered, so that when the wafer is bent by applying RF high frequency, in particular, the wafer is not completely flat or exposed to heat. As a result, the warping of the wafer is severe, causing arcing between the wafer and the electrostatic chuck, thereby causing damage to the wafer.

따라서, 본 발명은 상기와 같은 문제점을 해결하기 위하여 안출된 것으로서, 본 발명의 목적은, 웨이퍼를 지지하는 리프트 핀의 길이를 길게 하여 리프트 핀이 하강한 상태에서도 정전척의 표면에서 웨이퍼가 충분히 이격되도록 함으로써, 웨이퍼가 평탄하지 않거나 열에 의해 휘게 된 상태에서 RF 고주파를 인가하여 웨이퍼가 더욱 휘게 되더라도 아킹이 발생하는 것을 방지할 수 있는 반도체 제조 장비용 리프트 핀을 제공하는 데 있다.Accordingly, the present invention has been made to solve the above problems, an object of the present invention is to lengthen the length of the lift pin for supporting the wafer so that the wafer is sufficiently spaced from the surface of the electrostatic chuck even when the lift pin is lowered. Accordingly, the present invention provides a lift pin for semiconductor manufacturing equipment that can prevent arcing from occurring even if the wafer is further bent by applying RF high frequency while the wafer is not flat or bent by heat.

이상과 같은 목적을 달성하기 위하여, 본 발명은 정전척 하부에 설치된 리프트후프에 의해 승하강되어 웨이퍼를 승하강시키는 리프트핀에 있어서, 상기 리프트핀은, RF 고주파를 인가하여 웨이퍼가 휘더라도 상기 웨이퍼와 상기 정전척 간에 아킹이 발생하지 않을 정도의 길이로 형성되는 것을 특징으로 하는 반도체 제조 장비용 정전척의 리프트 핀을 제공한다.In order to achieve the above object, the present invention is a lift pin which is lifted and lowered by a lift hoop installed in the lower portion of the electrostatic chuck, the lift pin, the wafer even if the wafer is bent by applying an RF high frequency It provides a lift pin of the electrostatic chuck for semiconductor manufacturing equipment, characterized in that formed to a length such that arcing does not occur between the and the electrostatic chuck.

바람직하게는 상기 리프트 핀의 길이는, 상기 리프트 핀이 하강하여 웨이퍼를 지지한 상태에서, 상기 리프트 핀의 상단부가 상기 정전척의 표면으로부터 1㎜ 이상의 높이에 위치하도록 형성된다.Preferably, the length of the lift pin is formed such that the upper end of the lift pin is positioned at a height of 1 mm or more from the surface of the electrostatic chuck while the lift pin is lowered to support the wafer.

이하, 본 발명의 바람직한 일 실시예를 도 2 및 도 3을 참조하여 설명한다.Hereinafter, a preferred embodiment of the present invention will be described with reference to FIGS. 2 and 3.

도 2는 본 발명에 따른 정전척의 리프트핀이 승강된 상태를 나타낸 단면도이며, 도 3은 도의 정전척의 리프트 핀이 하강한 상태를 나타낸 도면이다.2 is a cross-sectional view showing a lift pin of the electrostatic chuck in accordance with the present invention is lifted, Figure 3 is a view showing a state in which the lift pin of the electrostatic chuck in Fig. Is lowered.

도 2 및 도 3에 도시된 바와 같이, 정전척(20)의 상부에는 웨이퍼(22)가 놓 여지고, 상기 웨이퍼(22)는 웨이퍼 지지장치에 의해 승하강한다.2 and 3, the wafer 22 is placed on top of the electrostatic chuck 20, and the wafer 22 is raised and lowered by the wafer support device.

웨이퍼 지지장치는 리프트 핀(24), 리프트 후프(26) 및 벨로우즈관(28)을 포함하여 구성된다.The wafer support device includes a lift pin 24, a lift hoop 26 and a bellows pipe 28.

상기 리프트 핀(24)은 정전척(20)에 형성된 삽입홀을 관통하여 승하강하며, 상기 리프트 핀(24)은 리프트 후프(26)에 연장되어 있어 리프트 후프(26)의 승하강에 따라 리프트 핀(24)도 승하강하게 된다. The lift pin 24 moves up and down through the insertion hole formed in the electrostatic chuck 20, and the lift pin 24 extends to the lift hoop 26 to lift as the lift hoop 26 moves up and down. The pin 24 also moves up and down.

그리고, 리프트 후프(26)는 벨로우즈관(28)에 의해 그 높이가 조정된다. 결국, 벨로우즈관(28)이 상승하면, 리프트 핀(24)도 상승하게 되고, 벨로우즈관(28)이 하강하면 리프트 핀(24)도 하강하게 된다.The height of the lift hoop 26 is adjusted by the bellows pipe 28. As a result, when the bellows pipe 28 is raised, the lift pin 24 is also raised, and when the bellows pipe 28 is lowered, the lift pin 24 is also lowered.

로봇 암이 카세트에서 웨이퍼(22)를 이송해오면, 리프트 핀(24)이 상승하게 되고, 상승된 리프트 핀(24)에 웨이퍼(22)가 안치된다.When the robot arm carries the wafer 22 from the cassette, the lift pin 24 is raised, and the wafer 22 is placed on the raised lift pin 24.

웨이퍼(22)가 리프트 핀(24) 상부에 안치되면, 리프트 핀(24)은 도 3과 같이 하강하게 된다. 리프트 핀(24)이 하강한 후 소정의 공정이 진행되는데, RF 고주파가 인가됨으로써 웨이퍼(22)는 정전력에 의해 고정된 상태에서 공정이 진행된다.When the wafer 22 is placed on the lift pin 24, the lift pin 24 is lowered as shown in FIG. 3. After the lift pin 24 is lowered, a predetermined process is performed. When RF high frequency is applied, the process is performed while the wafer 22 is fixed by the constant power.

그리고 RF 고주파가 인가됨에 따라 도 3과 같이 웨이퍼(22)의 휨(warpage)이 발생하게 되는데, 이러한 웨이퍼(22)의 휨은 웨이퍼(22)가 완전히 평평하지 않거나 고온에서 공정이 진행될 경우 더욱 심해진다.As the RF high frequency is applied, warpage of the wafer 22 occurs as shown in FIG. 3, and the warpage of the wafer 22 is more severe when the wafer 22 is not completely flat or the process is performed at high temperature. Lose.

그러나, 본 발명은 종래의 기술과 달리 리프트 핀(24)의 길이를 길게 함으로써 리프트 핀(24)이 하강한 상태에서 공정이 진행되어 웨이퍼(22)가 휘더라도 웨이퍼(22)와 정전척(20) 간에 아킹이 발생하지 않는다.However, according to the present invention, the length of the lift pins 24 increases the length of the lift pins 24 so that the process proceeds in a state where the lift pins 24 are lowered so that the wafers 22 and the electrostatic chuck 20 may be bent. Arcing does not occur between).

즉, 정전척(20)의 표면으로부터 1㎜ 이상 웨이퍼(22)가 이격되도록 리프트 핀(24)의 길이를 길게 형성함으로써, 정전력에 의해 웨이퍼(22)가 휘게 되더라도 아킹이 발생하는 것을 방지할 수 있으므로 웨이퍼(22)의 손상을 줄일 수 있다. That is, by forming the length of the lift pin 24 long so that the wafer 22 is separated from the surface of the electrostatic chuck 20 by 1 mm or more, it is possible to prevent arcing from occurring even if the wafer 22 is bent by the electrostatic force. As a result, damage to the wafer 22 can be reduced.

소정의 공정이 완료되면, 로봇 암이 웨이퍼(22)를 이송할 수 있도록 리프트 핀(24)은 다시 상승하게 된다.When the predetermined process is completed, the lift pin 24 is raised again so that the robot arm can transfer the wafer 22.

이상에서는 도면과 명세서에 최적 실시예를 개시하였다. 여기서는 설명을 위해 특정한 용어들이 사용되었으나, 이는 단지 본 발명을 설명하기 위한 목적에서 사용된 것이며, 의미를 한정하거나 특허청구범위에 기재된 본 발명의 범위를 제한하기 위하여 사용된 것은 아니다. 그러므로, 본 기술 분야의 통상의 지식을 가진 자라면 이로부터 다양한 변형 및 균등한 타 실시예가 가능하다는 점을 이해할 것이다. 따라서, 본 발명의 진정한 기술적 보호범위는 첨부된 특허청구범위의 기술적 사상에 의해 정해져야 한다.In the above, the best embodiment has been disclosed in the drawings and the specification. Although specific terms have been used herein for the purpose of description, they are used only for the purpose of describing the present invention and are not intended to limit the meaning or the scope of the invention as set forth in the claims. Therefore, those skilled in the art will understand that various modifications and equivalent other embodiments are possible from this. Therefore, the true technical protection scope of the present invention should be defined by the technical spirit of the appended claims.

본 발명에 의하면, 웨이퍼를 지지하는 리프트 핀의 길이를 길게 하여 리프트 핀이 하강한 상태에서도 정전척의 표면에서 웨이퍼가 충분히 이격되도록 함으로써, RF 인가로 웨이퍼가 휘게되더라도 아킹이 발생하는 것을 방지할 수 있으므로 아킹 발생으로 인한 웨이퍼의 손상을 방지할 수 있다.According to the present invention, the length of the lift pin supporting the wafer is increased so that the wafer is sufficiently separated from the surface of the electrostatic chuck even when the lift pin is lowered, thereby preventing arcing even when the wafer is bent by RF application. Damage to the wafer due to arcing can be prevented.

Claims (2)

정전척 하부에 설치된 리프트후프에 의해 승하강되어 웨이퍼를 승하강시키는 리프트핀에 있어서,In the lift pin which is lifted and lowered by the lift hoop installed in the lower part of the electrostatic chuck, 상기 리프트핀은,The lift pin, RF 고주파를 인가하여 웨이퍼가 휘더라도 상기 웨이퍼와 상기 정전척 간에 아킹이 발생하지 않을 정도의 길이로 형성되는 것을 특징으로 하는 반도체 제조 장비용 정전척의 리프트 핀.The lift pin of the electrostatic chuck for semiconductor manufacturing equipment, characterized in that it is formed to a length such that arcing does not occur even if the wafer is bent by applying RF high frequency. 제 1 항에 있어서,The method of claim 1, 상기 리프트 핀의 길이는,The length of the lift pin, 상기 리프트 핀이 하강하여 웨이퍼를 지지한 상태에서, 상기 리프트 핀의 상단부가 상기 정전척의 표면으로부터 1㎜ 이상의 높이에 위치하도록 형성되는 것을 특징으로 하는 반도체 제조 장비용 정전척의 리프트 핀. The lift pin of the electrostatic chuck for semiconductor manufacturing equipment, wherein the upper end of the lift pin is formed at a height of 1 mm or more from the surface of the electrostatic chuck while the lift pin is lowered to support the wafer.
KR1020050099752A 2005-10-21 2005-10-21 Lift pin in electro static chuk of semiconductor production device KR20070043456A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102234220B1 (en) 2020-07-24 2021-03-30 이준호 Conductive electrode static chuck lift pin, electrode static chuck including the same, and semiconductor production method using them

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102234220B1 (en) 2020-07-24 2021-03-30 이준호 Conductive electrode static chuck lift pin, electrode static chuck including the same, and semiconductor production method using them

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